High-frequency package

Abstract

In a multilayer substrate, a quasi-coaxial line is formed as a structure for transmitting a high-frequency signal generated by a mounted high-frequency device from an uppermost layer to a lowermost layer to externally output and for transmitting an externally input high-frequency signal from the lowermost layer to the high-frequency device. The quasi-coaxial line has: a central conductor being a vertical through hole via that connects between a metal pattern formed on an upper surface of the uppermost layer and a metal pattern formed on a lower surface of the lowermost layer; and outer conductors being a plurality of interlayer vias that are circularly arranged around the central conductor and connect between two or more layers. Whole or a part of the vertical through hole via is substituted by a capacitor structure formed of conductor pads facing each other without any via.

Claims

1. A high-frequency package comprising a multilayer substrate in which a quasi-coaxial line is formed as a structure for transmitting a high-frequency signal generated by a mounted high-frequency device from an uppermost layer to a lowermost layer to externally output and for transmitting an externally input high-frequency signal from the lowermost layer to the high-frequency device, the quasi-coaxial line comprising: a central conductor that connects between a first metal pattern formed on an upper surface of the uppermost layer and a second metal pattern formed on a lower surface of the lowermost layer; and outer conductors being a plurality of first interlayer vias that are circularly arranged around the central conductor and connect between two or more layers, wherein the central conductor is formed by: a second interlayer via having one end connected to the first metal pattern and an opposite end formed to penetrate through at least one layer of the multilayer substrate; and a capacitor structure formed between the opposite end of the second interlayer via and the lower surface of the lowermost layer of the multilayer substrate, wherein the outer conductors of the quasi-coaxial line are connected to ground, and wherein the capacitor structure is formed of at least three conductor pads formed, respectively, in a corresponding number of adjacent layers of the multilayer substrate and facing each other, wherein the at least three conductor pads include an uppermost layer conductor pad connected to the opposite end of the second interlayer via, a lowermost layer conductor pad directly connected to a solder ball surrounded by a ground pad forming the ground, and an intermediate layer conductor pad placed between the uppermost layer conductor pad and the lowermost layer conductor pad, wherein the uppermost layer conductor and the intermediate layer conductor pad face each other and together form a first capacitor, and the lowermost layer conductor pad and the intermediate layer conductor pad face each other and together form a second capacitor, the first capacitor and the second capacitor being placed in series.

2. A high-frequency package comprising: a high-frequency device; a multilayer substrate on whose top surface the high-frequency device is mounted and to whose bottom surface solder balls are connected; a surface layer conductor pattern formed on a surface of the multilayer substrate and transmitting a high-frequency signal output from the high-frequency device; and a quasi-coaxial line formed within the multilayer substrate, wherein the quasi-coaxial line comprises: a central conductor comprising: a first interlayer via connected to the surface layer conductor pattern and penetrating through at least one layer of the multilayer substrate; and a capacitor section including an uppermost layer conductor pad connected to the first interlayer via, a lowermost conductor pad directly connected to one of the solder balls surrounded by a ground pad forming a ground, and an intermediate layer conductor pad placed between the uppermost layer conductor pad and the lowermost layer conductor pad; and outer conductors formed of a plurality of second interlayer vias arranged around the central conductor and connected to the ground, and wherein the uppermost layer conductor pad and the intermediate layer conductor pad face each other and together form a first capacitor, and the lowermost layer conductor pad and the intermediate layer conductor pad face each other and together form a second capacitor, the first capacitor and the second capacitor being placed in series.

3. The high-frequency package according to claim 2, wherein the outer conductors are connected to another of the solder balls at the bottom surface of the multilayer substrate.

4. The high-frequency package according to claim 3, wherein the multilayer substrate is mounted on another substrate through the solderballs.

Description

BRIEF DESCRIPTION OF DRAWING

(1) FIG. 1 is a cross-sectional view of a configuration of a main part of a high-frequency package according to an embodiment of the present invention.

DESCRIPTION OF EMBODIMENTS

(2) Exemplary embodiments of a high-frequency package according to the present invention will be described below in detail with reference to the accompanying drawings. It should be noted that the present invention is not limited to the embodiments.

Embodiment

(3) FIG. 1 is a cross-sectional view of a configuration of a main part of a high-frequency package according to an embodiment of the present invention. In FIG. 1, a high-frequency device (MMIC) 2 is mounted on a multilayer substrate 1 that constitutes the high-frequency package. An input/output port of the high-frequency device 2 is connected through a wire 3 to one end of a microstrip line 4 that is formed on an upper surface of an uppermost layer of the multilayer substrate 1.

(4) In the multilayer substrate 1, a quasi-coaxial line 5 is formed between the uppermost layer and a lowermost layer. A central conductor of the quasi-coaxial line 5 has an interlayer via 6 and a capacitor structure 7. One end of the interlayer via 6 is connected to the microstrip line 3, and the other end thereof is formed to penetrate through plural inner layers. The capacitor structure 7 is formed between the other end of the interlayer via 6 and the lowermost layer. Outer conductors of the quasi-coaxial line 5 are constituted by a plurality of interlayer vias 8 that are circularly arranged around the central conductor (the interlayer via 6+the capacitor structure 7) and connect between two or more layers.

(5) In general, a central conductor of a quasi-coaxial line formed in a multilayer substrate is constituted by a vertical through hole via that penetrates and connects between the uppermost layer and the lowermost layer. In the case of FIG. 1, however, a part of the vertical through hole via is substituted by the capacitor structure 7.

(6) In FIG. 1, the capacitor structure 7 is formed of conductor pads 9a, 9b, and 9c that are respectively formed in three adjacent layers and face each other. The conductor pad 9a is connected to the other end of the interlayer via 6, and the conductor pad 9b is formed on a lower surface of the lowermost layer. The conductor pad 9c is placed between the conductor pad 9a and the conductor pad 9b. That is, the capacitor structure 7 shown in FIG. 1 has a configuration in which two capacitors are placed in series.

(7) The lowermost layer of the multilayer substrate 1 is mounted on an upper surface of another multilayer substrate 11 through solder balls 10a and 10b that constitute a BGA. The solder ball 10a connects between the conductor pad 9b serving as the other end of the central conductor of the quasi-coaxial line 5 and a microstrip line 12 formed on an upper surface of the multilayer substrate 11. The solder ball 10b connects between the interlayer via 8 serving as the outer conductor of the quasi-coaxial line 5 and a ground conductor 13 formed on the upper surface of the multilayer substrate 11.

(8) In the configuration described above, let us consider a case where crack 14 is caused in an inner layer of the multilayer substrate 1 due to thermal stress and the like at a time of manufacturing the substrate and, at a time of operation where the high-frequency device 2 is implemented, the crack 14 extends to a region where the central conductor is formed. Even in this case, a structure of the quasi-coaxial line 5 serving as the transmission path of the high-frequency signal is maintained due to the capacitor structure 7. It is therefore possible to suppress deterioration in the pass characteristic of the high-frequency signal.

(9) In the example shown in FIG. 1, the crack 14 is caused in a substrate layer where the capacitor structure 7 is formed. However, the crack 14 can be caused in any inner layer of the substrate. For example, the crack 14 may be caused in any of the plural layers where the interlayer via 6 is formed. In this case, salvation by the capacitor structure 7 does not work and the central conductor is broken. It is therefore preferable that whole of the central conductor of the quasi-coaxial line 5 is formed of a capacitor structure. That is, a plurality of capacitors are placed in series between the uppermost layer and the lowermost layer. It may be said that FIG. 1 illustrates a case where an inner substrate layer where a crack is caused due to thermal stress can be specified empirically.

(10) According to the present embodiment as described above, even if a crack is so formed as to cut across a region where the central conductor of the quasi-coaxial line is formed, a structure of the quasi-coaxial line serving as the transmission path of the high-frequency signal is maintained due to the capacitor structure. It is therefore possible to suppress deterioration in the pass characteristic of the high-frequency signal.

INDUSTRIAL APPLICABILITY

(11) As described above, the high-frequency package according to the present invention is useful as a high-frequency package having a multilayer substrate and capable of suppressing deterioration in a pass characteristic of a high-frequency signal even if a crack is so formed as to cut across a region where a central conductor is formed.

REFERENCE SIGNS LIST

(12) 1 multilayer substrate 2 high-frequency device (MMIC) 3 wire 4, 12 microstrip line 5 quasi-coaxial line 6, 8 interlayer via 7 capacitor structure 9a, 9b, 9c conductor pad 10a, 10b solder ball 11 another multilayer substrate 13 ground conductor 14 crack