Self-limiting filters for band-selective interferer rejection or cognitive receiver protection

Abstract

The present invention related to self-limiting filters, arrays of such filters, and methods thereof. In particular embodiments, the filters include a metal transition film (e.g., a VO.sub.2 film) capable of undergoing a phase transition that modifies the film's resistivity. Arrays of such filters could allow for band-selective interferer rejection, while permitting transmission of non-interferer signals.

Claims

1. A self-limiting filter comprising: an input configured to receive an input signal; an output configured to transmit an output signal; a ground connection; one or more resonant portions, wherein at least one resonant portion is connected to the input and the output; and a phase transition film connecting at least one resonant portion to the ground connection, wherein the phase transition film is configured to operate in a transmissive state below a threshold power and in a reflective state above the threshold power, thereby providing the self-limiting filter.

2. The self-limiting filter of claim 1, wherein the phase transition film comprises a vanadium oxide, a niobium oxide, a nickelate, an iron oxide, a titanium oxide, a cobaltate, or a doped form thereof.

3. The self-limiting filter of claim 1, configured to return to the transmissive state upon shunting an interferer that imposes a power above the threshold power.

4. A filter array comprising a plurality of self-limiting filters, wherein each self-limiting filter, individually, comprises: an input configured to receive an input signal; an output configured to transmit an output signal; a ground connection; one or more resonant portions, wherein at least one resonant portion is connected to the input and the output; and a phase transition film connecting at least one resonant portion to the ground connection, wherein the phase transition film is configured to operate in a transmissive state below a threshold power and in a reflective state above the threshold power, thereby providing the self-limiting filter.

5. The filter array of claim 4, wherein each self-limiting filter comprises a different resonant frequency, center frequency, and/or cutoff frequency.

6. The filter array of claim 5, wherein the phase transition film comprises a vanadium oxide, a niobium oxide, a nickelate, an iron oxide, a titanium oxide, a cobaltate, or a doped form thereof.

7. The filter array of claim 6, wherein each filter, individually, is a coupled-line filter, a microstrip filter, or a parallel-coupled microstrip filter.

8. The filter array of claim 4, wherein the filter array comprises a passband.

9. The filter array of claim 8, wherein each self-limiting filter is characterized by a different resonant frequency, center frequency, and/or cutoff frequency within the passband.

10. The filter array of claim 4, wherein the filter array is configured to reflect an input signal when an interferer is present but to allow one or more other input signals of interest that is below the threshold power.

11. The filter array of claim 4, wherein the filter array is configured to return to the transmissive state upon shunting an interferer that imposes a power above the threshold power.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A-1C is a schematic showing the cognitive filter concept. (A) Individual filters make up a continuous passband containing signals of interest. When one or more interferer is present in the passband (B), the filters at the locations of the interferers begin reflecting at that frequency instead of passing signals (C). These notches remain in the passband until the interferer is no longer present.

(2) FIG. 2 shows an exemplary design of the self-limiting filter. Provided are a schematic and photographs of a simple coupled-line filter having a highly-resistive VO.sub.2 film placed at the end of a resonant portion. When this film is heated beyond its critical temperature T.sub.c (or threshold temperature), the VO.sub.2 transitions from an insulating state to a metallic state, thereby changing the open circuit to a short circuit. Thus, the filter reflects instead of transmits power in its passband.

(3) FIG. 3 is a schematic of an exemplary filter 100.

(4) FIG. 4 shows a four-point probe measurement of VO.sub.2 sheet resistance as a function of temperature. As the film heats, it changes from an insulating state to a metallic state. This low resistance shorts the filter to ground and increases the isolation of the filter.

(5) FIG. 5 shows measured S-Parameters of the self-limiting filter at low and high temperatures. Lower temperatures represent normal operating conditions, and elevated temperatures represent the filter when a high-power interferer present in the pass-band.

(6) FIG. 6 is a schematic showing an exemplary power measurement setup. A synthesized sweeper ramped the power of a signal in the filter's passband. Then, the power amplifier increased the signal level, which was then recorded through a coupler as P.sub.in. This signal was transmitted through the filter, and P.sub.out was recorded at the filter's output.

(7) FIG. 7A-7B shows graphs of (A) measured power at the output of the filter versus power at the input and (B) measured filter isolation. As input power increased, the filter passed most of the signal until about 2 W, at which point the filter VO.sub.2 film heated significantly and began to short the filter to ground. At this point, the output power decreased significantly. This continued until the input power was brought back to a low power state, at which point the filter operated again as normal.

DETAILED DESCRIPTION OF THE INVENTION

(8) The present invention relates to a self-limiting filter, which can be an individual band-select filter have an automatic-rejection capability. In use, the filter receives a signal as normal (FIG. 1A) until the signal in its band reaches a certain power threshold, at which point the filter pole is changed into a zero, reflecting the signal of the interferer (FIG. 1B). When the interferer is removed, then filter pole is automatically reset, and the device continues to operate as normal.

(9) With this approach, an array of band-select filters has the ability to reflect the signal in a channel when an interferer is present, but continue to allow signals of interest in adjacent channels to remain active (FIG. 1C). This is implemented using a phase-change vanadium dioxide (VO.sub.2) thin film. When the RF power in the filter increases the temperature of the film significantly, the film changes from an insulator to a metal, shorting a section of the filter and rejecting (or reflecting) further signals in that band. This approach takes advantage of the architecture of existing channelized systems. Accordingly, the present filters and arrays thereof can be implemented with such channelized systems.

(10) The self-limiting filter includes any useful components to receive and transmit signal, as well as to facilitate configuration with the phase change material. FIG. 3 provides an exemplary self-limiting filter 100 that is a parallel-coupled filter. The filter 100 includes a plurality of resonating portions 101-105. The first resonating portion 101 is configured to receive an input 110, and the n.sup.th resonating portion 105 is configured to transmit an output 120.

(11) As can be seen, the filter can include any n number of useful resonating portions (e.g., n can be 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, or more). In addition, each n.sup.th resonating portion can be characterized by any useful parameters related to the device's resonant frequency, center frequency, fractional bandwidth, reflected power, etc. Exemplary parameters include length of the overlapping resonating portions L.sub.n or L.sub.n-1 (e.g., L.sub.1, L.sub.2, etc.), total length of each resonating portion, total length of the resonant length (i.e., a length from one end of the first resonator and the n.sup.th resonator), gap between resonating portions g.sub.n-1,n (e.g., g.sub.1,2, g.sub.2,3, etc.), and width of the resonating portion w.sub.n (e.g., w.sub.1, w.sub.2, etc.).

(12) In one embodiment, the open end of second resonating portion 102 is connected to a phase change material 150, which in turn is connected to a ground connection (not shown). The ground connection can be a contact pad in the same plane as the resonating portions or a ground layer located beneath the device layer having the resonating portions. These connections can be made in any useful manner, such as by wirebonds, wires, leads, etc. In addition, any resonating potion can be connected to the phase change material in any useful configuration.

(13) Exemplary phase change materials include VO.sub.2, NbO.sub.2, and doped forms thereof, such as Cr.sub.xV.sub.1-xO.sub.2, where x is between 0 and 0.15. Other materials are described herein. In particular, doping can be used to control T.sub.c, which is the temperature at which the material transitions from an insulating state (e.g., a monoclinic state) to a metallic state (e.g., tetragonal state). For instance, doping of VO.sub.2 with Cr increases T.sub.c (e.g., from 50 C. up to 75 C. at 11% Cr), such that the critical temperature and the threshold power for the device can be controlled. Exemplary dopants include chromium, titanium, germanium, iron, cobalt, nickel, molybdenum, niobium, tantalum, and/or tungsten.

(14) The phase change material can be provided in any useful form, such as a thin film, a nanoparticle embedded in a film or a substrate (e.g., silica, a dielectric, or an insulator), a coating, etc. Methods of making, doping, and testing phase change materials are described in Scott S et al., A frequency selective surface with integrated limiter for receiver protection, Proc. 2012 IEEE in Antennas Propagation Soc. Int. Symp. (APSURSI) held on 8-14 Jul. 2012, pp. 1-2; Cavalleri A et al., Ultra-broadband femtosecond measurements of the photo-induced phase transition in VO.sub.2: From the mid-IR to the hard x-rays, J. Phys. Soc. Jpn. 2006 January; 75(1):1-9; Futaki H et al., Effects of various doping elements on the transition temperature of vanadium oxide semiconductors, Jpn. J. Appl. Phys. 1969; 8(8):1008-13; Aurelian C et al., Chapter 3: Exploiting the semiconductor-metal phase transition of VO.sub.2 materials: a novel direction towards tunable devices and systems for RF-microwave applications, pp. 35-56, in Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems, Moumita Mukherjee (ed.), InTech, published online Mar. 1, 2010; and U.S. Pat. Nos. 7,642,881 and 8,067,996, each of which is incorporated herein by reference in its entirety.

(15) The filters of the invention can be used to protect sensitive components against high-powered interferers. The architecture described herein allows for filter banks capable of automatically rejecting interferers, yet allowing signals of interest to pass. In particular embodiments, the filter is capable of automatically-rejecting high-powered interferers within its band, but is not affected by high-powered signals out-of-band. Other exemplary uses include switches, circuits (e.g., amplifier tuning circuits or coupler tuning circuits), shutters, transmission line systems, and receiver systems.

EXAMPLE

Example 1

Band-Selective Interferer Rejection for Cognitive Receiver Protection

(16) In the operation of radio frequency electronics, undesirable high-powered interferers have the potential to damage sensitive receiver components such as low noise amplifiers or surface acoustic wave filters. Frequency-selective surfaces and antennas provide a first line-of-defense from these interferers by rejecting out-of-band signals. Typically, a diode or ferrite-based limiter then protects components further down the signal chain. Unfortunately, these components introduce unwanted harmonics due to clipping of the signal, and most are not compatible with traditional fabrication processes, requiring post-processing or surface mounting of components. In addition, communications are still likely inoperable, as the clipped signal is likely either still in the receiver chain, or the diode is driven to a low-impedance state, reflecting even signals of interest.

(17) One potential solution has been presented in which a signal is sent first through a de-multiplexer (consisting of an array of bandpass filters), next a limiter array, which is made up of individual amplifiers which exhibit gain saturation, and finally, a multiplexer. Together, this yields an amplifier with channelized limiting properties (Rauscher C, A channelized-limiter approach to receiver front-end protection, IEEE Trans. Microwave Theory Tech. 1996 July; 44(7):1125-9). In a practical case, the amplifiers would likely be replaced with individual limiters, as otherwise nothing is provided to protect the amplifiers themselves. This is a very interesting approach, but has some drawbacks. In this implementation, the isolation is limited to around 7 dB, and the additional size required by the components may be prohibitive. Furthermore, the limiter component itself would still introduce the undesirable harmonics and require surface mounting.

(18) Limiters utilizing the phase change of vanadium dioxide VO.sub.2 thin films have been proposed in Givernaud J et al., Microwave power limiting devices based on the semiconductor-metal transition in vanadium-dioxide thin films, IEEE Trans. Microwave Theory Tech. 2010 September; 58(9):2352-61. As the power through a section of co-planar waveguide increases, the film gradually heats until the film undergoes a phase change at around 70 C. Benefits of this implementation include the following: reflection instead of clipping, potential for extremely-fast switching times (Cavalleri A et al., Ultra-broadband femtosecond measurements of the photo-induced phase transition in VO.sub.2: From the mid-IR to the hard x-rays, J. Phys. Soc. Jpn. 2006 January; 75(1):1-9) (yielding low spike leakage), and the ability to dope the film to modify the transition temperature (Futaki H et al., Effects of various doping elements on the transition temperature of vanadium oxide semiconductors, Jpn. J. Appi. Phys. 1969; 8(8):1008-13). However, the limiters these authors demonstrated would begin to reflect any signal if an interferer is present, regardless of the frequency. This would render communications systems inoperable until the interferer is no longer present. This same issue is present in frequency selective surfaces with integrated limiters shown in Scott S et al., A frequency selective surface with integrated limiter for receiver protection, Proc. 2012 IEEE in Antennas Propagation Soc. Int. Symp. (APSURSI) held on 8-14 Jul. 2012, pp. 1-2.

(19) A more desirable solution is one in which individual band-select filters have an automatic-rejection capability. A filter receives a signal as normal, until the signal in its band reaches a certain power threshold, at which point the filter pole is changed into a zero, reflecting the signal of the interferer. When the interferer is removed, the filter pole is automatically reset, and the device continues to operate as normal. With this approach, an array of band-select filters has the ability to reflect the signal in a channel when an interferer is present, but continue to allow signals of interest in adjacent channels to remain active (FIG. 1). This is implemented using a phase-change vanadium dioxide (VO.sub.2) thin-film. When the RF power in the filter increases the temperature of the film significantly, the film changes from an insulator to a metal, shorting a section of the filter and rejecting further signals in that band. This approach takes advantage of the architecture of existing channelized systems.

(20) Accordingly, described herein is a new, frequency-selective limiting filter. This is accomplished by placing a phase change VO.sub.2 film at the proper node of the filter. When the high-powered microwave signal reaches a certain threshold, the VO.sub.2 undergoes a phase transition from the monoclinic insulating state to the tetragonal metallic state. This crystallographic change is accompanied by a three order of magnitude drop in the film's resistivity, and creates a short circuit at a section of the filter, changing a pole to a zero, and rejecting further undesirable high-powered signals from damaging sensitive receiver components. This Example details the design and simulation of the filter, along with measurement results from VO.sub.2 films and the filter element. This filter element began rejecting at about 2 W input power, with isolation of over 16 dB to over 23 W input power, and is unaffected by an out-of band interferer of over 25 W. The architecture presented allows for filter banks capable of automatically-rejecting interferers, yet allowing signals of interest to pass. Details follow.

(21) Design and Fabrication:

(22) The filter used for the proof-of-concept here is a simple two-pole coupled-line microstrip design centered around 2.4 GHz. However, the method used in this work is applicable to a wide variety of filters and frequencies. An HFSS finite element simulation (HFSS 14.0, ANSYS, Inc., Canonsburg, Pa.) was next performed to optimize the design of the filter.

(23) Then, the filter was fabricated using traditional PCB manufacturing processes. The filter ports were 50 ohms. The resonant sections connected to the input and output lines were 0.82 mm wide. The center resonant sections were 0.92 mm wide and were separated by 1.06 mm. The overlap between each resonant section was about 15 mm, resulting in a total length for each resonant line of about 30 mm. The filter was then fabricated on a 25 mil Roger's Corporation 6006 printed circuit board (PCB) material (Rogers RT/Duroid 6006 PTFE/Ceramic Laminate, Rogers Corporation, Woodstock, Conn.). The VO.sub.2 film used in this case was sputtered and patterned on a bare silicon wafer, and diced after deposition and patterning of the subsequent layers. The top metal electrodes were connected via wirebonds to the PCB below (FIG. 2). This was done solely for convenience. Sputtering and patterning the VO.sub.2 directly on the PCB, or designing the filter on the wafer are possible methods of integration.

(24) Results:

(25) The resistance versus temperature of the VO.sub.2 resistor was measured using a hot plate and DC probes (FIG. 4). As temperature increased, the film changed from a monoclinic insulator state to a tetragonal metallic state (Zylbersztejn A et al., Metal-insulator transition in vanadium dioxide, Phys. Rev. B 1975 June; 11:4383-95), and the resistivity dropped by three orders of magnitude.

(26) The S-Parameters of the filter versus temperature were measured to determine the passband of the filter. A two-port SOLT calibration was performed with SMA calibration standards on an Agilent PNA. The filter was then measured at room temperature to determine the normal (small-signal) operating condition of the filter. The temperature of the filter and VO.sub.2 sample was then increased via a hotplate, and the S-Parameters were measured at elevated temperatures. The high-temperature states represented the condition of the filter when a high-power interferer is present in the band. Results shown in FIG. 5 highlight over 16 dB of isolation in the passband when a high powered interferer was present.

(27) The power measurement setup is shown in FIG. 6. First, a synthesized sweeper outputted a 2.2 GHz (in filter passband) signal. The signal power was ramped up from 20 dBm, while a power amplifier increased the signal power. A 20 dB coupler next fed a power meter to record P.sub.in, an isolator (in the form of a circulator with large attenuator) protected the amplifier output, and the power was delivered to the device under test. The output port of the filter fed the second channel of the power meter, corresponding to P.sub.out.

(28) The results of the measurement are shown in FIG. 7A-7B. As the power input to the filter increased, the power output increased linearly. When the threshold power as reached, the VO.sub.2 film was heated to its transition point and shunted the filter to ground. Then, the filter began to reflect instead of transmit the signal.

(29) The isolation increased with further power increase. Once the filter was brought again to a low-power state, it returned to its normal operating state. Note that when power was not in the passband of the filter, an insufficient field was generated at the location of the VO.sub.2 for the device to heat up. This was demonstrated by sweeping a 1.5 GHz signal (outside of the filter's passband) up to 25 W and observing the filter's transfer characteristics.

(30) In conclusion, described herein is a band-selective rejection of interferers, along with design, simulation, and measurement of a filter with automatic limiting capability. This was enabled by the phase transition of vanadium dioxide thin-films materials. The filter exhibited over 16 dB of isolation when an interferer is present. Future iterations will demonstrate multiband functionality, and allow for direct integration by directly fabricating the filter and sputtering the VO.sub.2 film on the filter substrate directly.

Other Embodiments

(31) All publications, patents, and patent applications mentioned in this specification are incorporated herein by reference to the same extent as if each independent publication or patent application was specifically and individually indicated to be incorporated by reference.

(32) While the invention has been described in connection with specific embodiments thereof, it will be understood that it is capable of further modifications and this application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure that come within known or customary practice within the art to which the invention pertains and may be applied to the essential features hereinbefore set forth, and follows in the scope of the claims.

(33) Other embodiments are within the claims.