INTEGRATED CIRCUIT PACKAGE AND METHOD OF MANUFACTURING THEREOF

Abstract

An integrated circuit package is provided, including: a die having circuitry with one or more bond pads on a first surface of the die; a conductive supporting structure allowing connection to the die, the conductive supporting structure including a slot; and a passive component inserted into the slot of the conductive support structure, and a first terminal of the passive component is electrically connected to the conductive supporting structure and the circuitry of the die.

Claims

1. An integrated circuit package comprising: a die comprising circuitry and one or more bond pads on a first surface of the die; a conductive supporting structure allowing connection to the die, the conductive supporting structure comprising a slot; and a passive component inserted into the slot of the conductive supporting structure, wherein the passive component has a first terminal that is electrically connected to the conductive supporting structure and the circuitry of the die.

2. The integrated circuit package according to claim 1, wherein the passive component comprises a capacitor.

3. The integrated circuit package according to claim 1, further comprising a die paddle on which the die is mounted.

4. The integrated circuit package according to claim 2, further comprising a die paddle on which the die is mounted.

5. The integrated circuit package according to claim 3, wherein the passive component has a second terminal that is attached to the die paddle.

6. The integrated circuit package according to claim 3, wherein the conductive supporting structure has at least a part thereof that is attached to the die paddle.

7. The integrated circuit package according to claim 1, further comprising a clip bonded package that comprises a plurality of clip leads, wherein the conductive supporting structure comprises at least a first of the plurality of clip leads.

8. The integrated circuit package according to claim 7, wherein the slot comprises a hole passing through a surface of the first of the plurality of clip leads.

9. The integrated circuit package according to claim 3, wherein the slot comprises a hole passing through a surface of a first of a plurality of clip leads.

10. The integrated circuit package according to claim 9, wherein the first of the plurality of clip leads comprise a first surface and a second surface, wherein the first surface is positioned further from the die paddle than the second surface, and wherein the hole is formed in the second surface.

11. The integrated circuit package according to claim 5, wherein the plurality of clip leads has a first clip lead that comprises a first downset and a second of the plurality of clip leads comprises a second downset adjacent the first downset, wherein the passive component is inserted into the first downset and the second downset, and wherein the passive component has a first terminal that is electrically connected to the first of the clip leads and a second terminal of the passive component that is electrically connected to the second of the clip leads, wherein the bonding pads have a first bonding pad that is electrically connected to the first of the plurality of clip leads so as to provide a connection between the first terminal of the passive component and the circuitry of the die.

12. The integrated circuit package according to claim 7, wherein the plurality of clip leads has a first clip lead that comprises a first downset and a second of the plurality of clip leads comprises a second downset adjacent the first downset, wherein the passive component is inserted into the first downset and the second downset, wherein the passive component has a first terminal that is electrically connected to the first of the clip leads and a second terminal of the passive component that is electrically connected to the second of the clip leads, wherein the bonding pads have a first bonding pad that is electrically connected to the first of the plurality of clip leads to provide a connection between the first terminal of the passive component and the circuitry of the die.

13. The integrated circuit according to claim 11, wherein the conductive supporting structure has at least part thereof that comprises the second of the clip leads, and wherein the second of the clip leads is electrically connected to the die paddle.

14. A method of manufacturing an integrated circuit package, the method comprising: providing a die comprising circuitry and one or more bond pads on a first surface of the die; providing a conductive supporting structure allowing connection to the die, the conductive supporting structure comprising a slot; inserting a passive component into the slot of the conductive supporting structure; forming an electrical connection between a first terminal of the passive component and the conductive supporting structure; and connecting one of the bond pads of the die to the conductive supporting structure to form an electrical connection between the circuity and the first terminal of the passive component.

15. The method according to claim 14, comprising: providing a die paddle; and attaching the die and the conductive supporting structure to the die paddle.

16. The method according to claim 15, comprising attaching the second terminal of the passive component to the die paddle.

17. The method according to claim 14, wherein the integrated circuit package is a clip bonded package, wherein the method comprises: providing a plurality of clip leads; and connecting at least some of the plurality of clip leads to at least one of the bond pads of the die, and wherein the conductive supporting structure comprises a first of the plurality of clip leads.

18. The method according to claim 16, wherein the integrated circuit package is a clip bonded package, wherein the method comprises: providing a plurality of clip leads; and connecting at least some of the plurality of clip leads to at least one of the bond pads of the die, and wherein the conductive supporting structure comprises a first of the plurality of clip leads.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Some embodiments of the disclosure will now be described, by way of example only and with reference to the accompanying drawings, in which:

[0029] FIG. 1a illustrates a clip bonded integrated circuit (IC) package from a first view.

[0030] FIG. 1b illustrates a clip bonded IC package from a second view.

[0031] FIG. 2 illustrates a wire bonded IC package.

[0032] FIG. 3a provides a top view of an IC package according to a first example embodiment.

[0033] FIG. 3b provides a further top view of the clip bonded IC package, including the wire connections, according to the first example embodiment.

[0034] FIG. 3c illustrates a three-dimensional view of the clip bonded IC package according to the first example embodiment.

[0035] FIG. 3d illustrates a cross-sectional view of the clip bonded IC package according to the first example embodiment.

[0036] FIG. 3e illustrates a three-dimensional view part of the clip bonded IC package according to the first example embodiment.

[0037] FIG. 3f illustrates a further three-dimensional zoom in view with the passive component of part of the clip bonded IC package according to the first example embodiment.

[0038] FIG. 4 illustrates steps in a method of manufacturing the clip bonded IC package according to the first example embodiment.

[0039] FIG. 5a is a top view of the IC package according to the second example embodiment.

[0040] FIG. 5b is a top view of the IC package, including the wire connections, according to the second example embodiment.

[0041] FIG. 5c is a three-dimensional view of the IC package according to the second example embodiment.

[0042] FIG. 5d is a cross-section of the IC package according to the second example embodiment.

[0043] FIG. 5e is a three-dimensional view of part of the IC package according to the second example embodiment.

[0044] FIG. 5f is a three-dimensional view of part of the IC package with the passive component attached, according to the second example embodiment.

[0045] FIG. 6 illustrates steps in a method of manufacturing the IC package according to the second example embodiment.

[0046] FIG. 7 illustrates an example of circuitry that may be implemented in the IC package.

[0047] FIG. 8 illustrates an example of an IC package according to the third example embodiment.

[0048] FIG. 9 illustrates a method of manufacturing the IC package.

DETAILED DESCRIPTION

[0049] Embodiments will be described in more detail with reference to the accompanying Figures.

[0050] A first example embodiment of the integrated circuit package is described with respect to FIGS. 3a-f and FIG. 4. According to the first example embodiment, the slot is formed as a hole passing through a surface of a clip lead belong to the integrated circuit device.

[0051] Reference is made to FIG. 3a, which illustrates a first view of the integrated circuit package 300 according to the integrated circuit device. The integrated circuit package 300 comprises a die paddle 305 on which die 320, 325 are formed. The integrated circuit package 300 further comprises a number of clip leads, which provide connections between the die 320, 325 and further components external to the package 300. The package is, therefore, a clip bonded package. The package 300 comprises a first set of clips 310 arranged along a first side of the package and a second set of clips 315 arranged along a second edge of the package 300. As shown, the first set of clips 310 comprises multiple separate clip leads that are not electrically connected to one another. On the other hand, the second set of clips 315 are connected to form a single lead. A first clip lead 335 constitutes a conductive supporting structure having a slot 330 into which the passive component is inserted.

[0052] In this embodiment, the slot is a hole passing through a surface of the clip lead 335. Each of the clips 310, 315 is made of copper or another conductive material.

[0053] FIG. 3a illustrates the package 300 prior to the attachment of wires into the package to connect the die 320 to ones of the clip leads 310, and to connect the die 320 to die 325. The die 325 may comprise large connection pads to which ones of the clip leads may be directly attached. However, the die 320 comprises smaller connection pads, e.g. connection pad 340, that are connected to the clip leads or to connection pads of the die 325 via wires.

[0054] Reference is made to FIG. 3b, which illustrates a further view of the integrated circuit package 300 in which the wires are shown connecting die 320 to die 325 and die 320 to ones of the clip leads 310. One of the wires 341 connects one of the connection pads of the die 320 to the clip lead 335, and thus forms a connection between a first terminal (which is bonded to the clip lead 335) of the passive component and the connection pad 340 of the die 320. The first terminal of the passive component is, thus connected to circuitry that is formed in the die 320. In this way, the passive component forms part of a circuit with the circuitry belonging to the die 320.

[0055] Reference is made to FIG. 3c, which illustrates a further view of the integrated circuit package 300. A first terminal of the passive component is shown located at the slot 330 of the clip lead 335. The first terminal is connected to the clip lead 335, which is bonded by wire 341, thus forming an electrical connection between the first terminal of the passive component and the circuitry in the die 320. As shown in FIG. 3c, the clip lead 335 comprises a raised portion 355, and a lower portion 360. The raised portion 355 is parallel to a top surface of the remaining clips. The lower portion 360 is located closer to the die paddle 305 than the raised portion 355, thus enabling the second terminal of the passive component to contact the die paddle 305 whilst minimising the required length of the passive component.

[0056] Reference is made to FIG. 3d, which illustrates a further view of the integrated circuit package 300. Shown in this Figure is the passive component 350 located in the slot of the clip 335. As shown, the slot takes the form of a hole through a surface of the clip 335. The hole is orientated to be parallel to the surface of the die paddle 305. In other words, the hole is orientated such that the passive component 350 is vertical when placed in the hole. The passive component 350 is soldered at a first end to the clip 335, such that the first terminal of the passive component is electrically connected to the clip 335. The solder is formed along an edge of the top of the hole. A second terminal, which is opposite the first terminal, of the passive component may be soldered to the die paddle 305. In this case, the die paddle 305 provides a ground connection to the passive component 350.

[0057] Reference is made to FIGS. 3e and 3f, which illustrate further parts of the integrated circuit package 300. FIG. 3e shows clip 335 and the slot 330 formed in the clip 335, prior to the insertion of the passive component 350 into the slot 330. The slot 330 has a constant bore with a lip on the top surface of the portion 360 of the lead 335. The slot 330 and the passive component 350 into the slot 330 both have a substantially cylindrical shape. FIG. 3f shows part of the package 300 after the passive component 350 is inserted into the slot 330. Solder is formed on top of the passive component 350 (i.e. on the first terminal), and is used to bridge the component 350 with the clip 335. Part of the passive component 350 is within the slot 330, with a further part of the passive component 350 (including the second terminal) being located beneath the slot 330.

[0058] Reference is made to FIG. 4, which illustrates a series of steps that are part of a method of manufacturing the integrated circuit package 300. The method comprises (at S405) providing the die paddle 305. The die paddle 305 may comprises a plurality of sheets (e.g. 20 or more) of a conductive material connected together in parallel.

[0059] Conductive material is placed (at S410) at predefined locations on the die paddle 305, e.g. by printing. The conductive material may comprise solder or another type of material. At S415, the die 320 and the die 325 are attached to the die paddle 305 on the conductive material added at S410. The die 325may be referred to as the high electron mobility transistor (HEMT) die, whereas the die 320 may be referred to as the driver 320. The HEMT die 325 added at S415 may contain the GaN FET of a cascode FET.

[0060] At S420, conductive material is placed at predefined locations on the top surface of the die 325, e.g. by printing. At S425, field effect transistor is attached to the die 325 to complete the circuitry of die 325. The field effect transistor is attached on the conductive material added at S420. The field effect transistor may be a metal oxide semiconductor field effect transistor (MOSFET).

[0061] At S430, conductive material is placed on the surface of the FET. This surface forms the drain terminal of the cascode FET.

[0062] At S435, the clips are attached to the package 300. Some of the clips belonging to the first set of clips attach to the top surface of the FET. Others of the clips belonging to the second set of clips 315 attach to other printed surfaces of the die 325.

[0063] At S440, the component 350 is inserted into a slot 330 in the clip 335. The passive component 350 is then aligned with the surface of the copper clip 335, and the second terminal of the passive component is connected to the die paddle 305. At S445, solder is added to the clip 335 to attach the first terminal of the component 350 to the clip 335.

[0064] At S450, the wirebonding between the connection pads on the die 320, 325 and between the die 320 and ones of the clips is added. This step includes forming a connection between one of the connection pads 340 on die 320 and the clip 335. Reflow is performed as part of S450.

[0065] At S455, moulding is performed to provide the components of the die package 300 within a resin mold.

[0066] A second example embodiment of the integrated circuit package is described with respect to FIGS. 5a-f and FIG. 6. According to the second example embodiment, a downset or half cut is made in each of two adjacent clip leads to form a slot. The passive component is then inserted into the half cut in each of the clip leads to connect the two clip leads. A connection between a die of the package and a first of the two adjacent clip leads is made in order to connect a first terminal of the passive component to the circuitry of the die. The second of the two adjacent clip leads may be connected to the die paddle so as form a connection with the ground for the second terminal of the passive component. In the description of the integrated circuit package according to the second example embodiment, elements that may be the same as in the first example embodiment are referred to with the same reference numerals.

[0067] Reference is made to FIG. 5a, which illustrates the integrated circuit package 500 according to the second example embodiment. The package comprises clips 510, in addition to the clips 315. Each of the clips 315, 510 is made of copper. The passive component 350 is shown connecting the clip lead 515 to the clip lead 520. The passive component 350 is inserted into a downset (also referred to as a half-cut) in each of the two clip leads 515, 520. A first terminal of the component 350 is soldered to the clip lead 515 to form an electrical connection with the clip lead 515. A second terminal of the component 350 is soldered to the clip lead 520 to form an electrical connection with the clip lead 520.

[0068] Reference is made to FIG. 5b, which illustrates a further view of the integrated circuit package 500, showing the wires connecting the die 320 to the die 325 and to ones of the clips 510. As shown, the wire 341 connects a connection pad 340 on the die 320 to the clip 515 so as to form an electrical connection between this connection pad 340 and the first terminal of the passive component 350. Thus an electrical connection between the circuitry in the die 320 and the terminal of the component 350 is formed.

[0069] Reference is made to FIG. 5c, which illustrates a further view of the integrated circuit package 500. The clip lead 520 is shown located over the die 325, but is unconnected to the circuitry of die 325 so that the second terminal of component 350 is unconnected to this circuitry.

[0070] Reference is made to FIG. 5d, which illustrates a further view of the integrated circuit package 500. A part 525 of the clip lead 520 is shown forming a connection with the die paddle 305. The part 525 of the clip lead 520 may be referred to as a pillar 525. Thus an electrical connection is formed between the second terminal of the passive component 350 and the die paddle 305.

[0071] Reference is made to FIGS. 5e and 5f, which illustrate further views of part of the integrated circuit package 500. FIG. 5e illustrates the downset made in each of the clip leads 515, 520. As is apparent from the Figure, the downset comprises a groove in the clip lead. In other words, the down set comprises a region of reduced thickness. The clip leads are provided with adjacent downsets in this way, thus providing a slot in which the passive component 350 may be inserted. As shown in FIG. 5f, when the component 350 is inserted into the downset, each of the two terminals of the component 350 are soldered to one of the clips leads 515, 520 by adding solder into the downsets. The first terminal of the component 350 is soldered to the clip lead 515 and the second terminal of the component 350 is soldered to the clip lead 520.

[0072] The insertion of the passive component 350 into the downsets allows for careful control of the solder amount used to solder each of the two terminals of the passive component 350. This reduces the probability of imbalanced solder on the two terminals of the passive component 350. As a result, tombstoning during the reflow process may be prevented. Additionally, by providing the passive component 350 in the downsets, the downsets provide a housing for the passive component 350 before the curing or reflow process and so avoids the lead 515 being contaminated by solder spreading or splatter before the wirebonding process. In other words, since the solder is placed lower than the wirebond pad (i.e. in the downcut), the wirebond pad is protected from being penetrated by solder during reflow.

[0073] Reference is made to FIG. 6, which illustrates a series of steps that are part of a method of manufacturing the integrated circuit package 500. The steps S405 to S430, S450 and S455 are the same as those shown in FIG. 4.

[0074] The method includes the step of (at S635) attaching the clips to the package 500. The clips differ in this instance in that a half-cut, rather than a hole, is made in the clips for insertion of the passive component 350. At S640, solder is added to the half-cuts. At S645, the component 350 is placed in the half-cuts, such that it is laterally attached between the two clip leads 515, 520. The second terminal of the passive component 350 is then connected to the die paddle 305 via the clip lead 520.

[0075] The passive component 350 may comprise different types of electrical component, e.g. a resistor, capacitor, inductor. An example will be described with respect to FIG. 7, in which the passive component 350 is a capacitor that is connected to a gate driver circuit implemented in the die 320. The gate driver may be used for driving a cascode FET implemented in the die 325. The die 325 may be a high electron mobility transistor (HEMT) die 325. Together, the gate driver and the cascode FET may be referred to as a cascode switching module.

[0076] Reference is made to FIG. 7 shows a schematic diagram of a cascode switching module 700, according to an embodiment of the disclosure. The module includes a bidirectional switch, S.sub.X, 745 and a unidirectional diode, D.sub.X, 750 connected between C.sub.X and the midpoint voltage, V.sub.M. The active switch, S.sub.X 745 is connected in parallel with the passive diode D.sub.X 750. The capacitor C.sub.X 350 can be charged and discharged by the gate driver circuit 710.

[0077] Due to the use of the switch S.sub.X 745 and diode D.sub.X 750, the trade-off between reducing overshoot by increasing the capacitance of C.sub.X and reducing power losses is decoupled because the stored energy in C.sub.X can instead be utilized to power gate driver circuits instead of MOSFET channel dissipation.

[0078] The midpoint voltage, V.sub.M, is the drain voltage of the normally-off silicon MOSFET. The source terminal may be grounded by connecting the source terminal to the die paddle 305. The gate-source voltage (V.sub.gs) of the normally-on GaN device is equal to the negative of the midpoint voltage, V.sub.M such that V.sub.M=V.sub.gs. In the device shown in FIG. 7, the voltage of the midpoint (V.sub.M) is nearly or substantially zero volts when the cascode switching module is on and conducting, is at a higher voltage (for example, 25 or 30 V) when the cascode switching module is off. When the cascode switching module 700 is off, the midpoint voltage, V.sub.M, increases such that the gate-source voltage (V.sub.gs) of the normally-on GaN device 720 is lower than the (negative) threshold V.sub.gs,th required to switch off the normally-on GaN device 720.

[0079] When the cascode switching module turns off, the midpoint voltage, V.sub.M, increases (e.g. the midpoint voltage, V.sub.M, may increase to 25 V) such that the gate-source voltage of the normally-on GaN device 705 is low enough to turn off. The diode, D.sub.X, 750, allows current to flow to the capacitor C.sub.X 350 to charge to the midpoint voltage, V.sub.M, level (minus the diode voltage drop). Hence, the diode, D.sub.X, allows energy harvesting. In addition, the diode, D.sub.X 750, and the capacitor, C.sub.X, clamp the midpoint voltage, V.sub.M, and prevent the normally-off silicon MOSFET 720 from avalanching.

[0080] Specifically, when the MOSFET 715 is turned off and V.sub.M>(V.sub.gs,th), the voltage of the midpoint, V.sub.M, starts to increase until it goes beyond the predetermined voltage (V.sub.gs,th) up to a level depending on the package parasitic inductance and as dictated by the respective parasitic capacitances of the GaN and MOSFET devices 705, 715.

[0081] The potential V.sub.M overshoot gets significantly reduced by the capacitor, C.sub.X, and thus limits the MOSFET 715 voltage rise and hence, the risk of MOSFET avalanche. As C.sub.X is realized as an off-chip device, its capacitance can be much larger than an integrated capacitor (e.g., the capacitance may be 1 uF for an off-chip capacitor rather than 1 nF for an integrated capacitor) without the concern of efficiency compromise.

[0082] To switch the normally-on GaN device 705 off, the midpoint voltage, V.sub.M, must exceed V.sub.gs,th . This means that the midpoint voltage, V.sub.M, will increase to at least V.sub.gs,th (in practise, it may go a bit higher than V.sub.gs,th ). The capacitor, C.sub.X, may therefore charge to approximately V.sub.gs,th , although it may be a bit lower due to the voltage drop of the diode, D.sub.X, 750 (which may be about 0.7 V). The charged energy of the capacitor, C.sub.X, can be recycled to power the gate driver 710 operation instead of generating losses on the MOSFET 715 turn-on channel. By this mechanism, a gate driver power source V.sub.X is internally generated, and the trade-off between reducing overshoot by increasing the capacitance of C.sub.X 350 and increasing power losses is decoupled.

[0083] The cascode switching module can be used for some resonant converter applications (e.g., an LLC converter). To avoid undesired turn-on of the GaN device 705 when its drain voltage is oscillating, a bidirectional switch S.sub.X 745 and a resistor R.sub.3 760 are used in the gate driver 710. The resistor 760 is connected between the voltage midpoint V.sub.M 120 and the switch S.sub.X 745. When the switching node V.sub.M (i.e., the drain of the GaN device 705) is purposefully oscillating and its voltage is lower than the gate driver power source V.sub.X, the switch S.sub.X 745 is turned on to provide a curtain voltage for the middle point V.sub.M 720 and thus the GaN device 705 is in an off-state. The resistor R.sub.3 760 limits the discharging current from the capacitor C.sub.X 350 to the voltage midpoint V.sub.M 720 and subsequently, the switch controller 745 turns off the switch S.sub.X 745. The switch S.sub.X 745 limits the midpoint voltage, V.sub.M, drop when the cascode switching module 700 is used in a resonant application as the drain voltage can oscillate, thus preventing the switching cascode module 700 from turning on while undesired.

[0084] Alternatively, the switch S.sub.X 745 is systematically turned on just after the turn-off of the cascode devices to maintain a minimum midpoint voltage V.sub.M 720 and thus prevent unexpected turn-on of the GaN device 705 due to switching node oscillations. The current capability of switch S.sub.X 745 is limited by the series resistor R.sub.3 760 (or by the on-state resistance of the switch S.sub.X 745) to avoid a rapid discharging of the gate drive power V.sub.X. If the switch S.sub.X 745 current exceeds a preset level and/or if the gate driver power source voltage V.sub.X or the midpoint voltage V.sub.M 720 drops below a preset level (e.g. 7V for V.sub.X, or 5V for V.sub.M), the switch S.sub.X 745 is immediately turned off to stop the action of opposing midpoint voltage V.sub.M drop which leads to the undesired turn-on of the cascode module 700.

[0085] A large negative current may flow within the cascode switching module when the current transitions from one cascode switching module to another or in bidirectional converters. In such case, this current will drop the midpoint voltage V.sub.M. The switch S.sub.X 745 current is limited so that the unavailable midpoint voltage V.sub.M drop in such situations does not lead to the discharge of the capacitor C.sub.X 350. The switch S.sub.X 745 will be turned off before turn on of the normally-off silicon MOSFET 715.

[0086] As the gate driver power source V.sub.X is an internal power rail, when used in a larger module, it features innate galvanic isolation between the low-voltage microcontroller and the high-voltage power stage of an application because the PWM signal of the cascode switching module is the only connection between a microcontroller, MCU, and the cascode switching module. This greatly improves safety levels (including human body touch) and simplifies hardware implementation. As no external power source is needed and the parasitic capacitance between different grounds is substantially reduced, the gate driver CMTI performance is significantly improved.

[0087] A Zener diode V.sub.Z 765 is connected in parallel to the capacitor C.sub.X 350. The Zener diode 765 may be formed within the same package as the normally-on GaN device 705 and the normally-off MOSFET 715, or may be an external component placed in parallel to the capacitor C.sub.X 350. If the consumption of the gate driver 715 is insufficient to absorb the leakage current from the GaN device 705, then integrated Zener diode V.sub.Z 765 limits the voltage on the capacitor C.sub.X 350 (i.e., the gate driver power source voltage V.sub.X). This is also beneficial to clamp the midpoint voltage V.sub.M 720 spikes.

[0088] In the example module of FIG. 7, there is a voltage regulator in the gate driver 710. This generates a dedicated supply voltage for the gate driving buffers, although other embodiments may not include a voltage regulator.

[0089] Since the CX 350 is discrete and is quickly charged in nano-second range during the turn-off mode of the MOSFET 715, package parasitic inductance and quick charging loop should be minimized. By implementing the discrete capacitor CX 350 as part of the package 300, 500, the package parasitic inductance and charging loop may be minimised, so as to avoid comprising the product performance.

[0090] In some embodiments, the passive component 350 may be provided in a different type of conductive supporting structure of the package other than a clip lead.

[0091] Reference is made to FIG. 8, which illustrates an integrated circuit package 800 according to a third example embodiment. As shown, the integrated circuit package 800 includes a base plate 820 to which the die 830 is bonded. The die 830 may be connected to predetermined connection points on the PCB 810 by wires connecting connection pads on the die 830 directly to the PCB 810 (e.g. as illustrated in FIG. 2) or by clip leads that are bonded to the PCB 810 and to connections pads on the die 830 (e.g. as illustrated in FIGS. 1a and 1b).

[0092] The package 800 comprises a supporting structure 825 that is connected to a base plate 820. The supporting structure 825 may be connected to an insulating pad 815 on the base plate 820. The passive component 350 is inserted into a slot formed in a surface of the supporting structure 825. The passive component 350 is soldered on a first terminal so as to form an electrical connection between the first terminal and the supporting structure 825. The supporting structure 825 is connected by a wire 835 to the connection pad 840 on the surface of the die 830 so as to form an electrical connection between circuitry of the die 830 and the first terminal of the passive component 350.

[0093] In each of the above described integrated circuit packages 300, 500, 800, a conductive supporting structure is provided in which the passive component 350 is provided. In the first and second example embodiments, this structure takes the form of a clip lead 335, 515, whilst in the third example embodiment, this structure takes the form of a separate structure 810 independent of the leads. In each case, the passive component is part of an encapsulated or molded semiconductor package 300, 500, 800.

[0094] Reference is made to FIG. 9, which illustrates a method 900 according to example embodiments.

[0095] At S910, a die, e.g. die 325 or die 830, is provided. The die comprises circuitry and one or more bond pads on a first surface of the die.

[0096] At S920, a conductive supporting structure is provided. The conductive supporting structure may be structure 825, clip lead 335, or clip lead 515. The conductive supporting structure is provided with a slot.

[0097] At S930, a passive component 350 is inserted into the slot of the conductive supporting structure. This step is illustrated at S445 and S645 in FIGS. 4 and 6

[0098] At S940, an electrical connection between a first terminal of the passive component 350 and the conductive supporting structure is formed. This step is illustrated at S450 in FIGS. 4 and 6.

[0099] At S950, the one of the bond pads of the die provided at S910 is connected to the conductive supporting structure.

[0100] It would be appreciated that the embodiments have been described by way of example only.