METHOD OF HAVING GOOD THERMAL ISOLATION IN WAFER TEST CASSETTE
20250093407 ยท 2025-03-20
Inventors
Cpc classification
G01R31/2868
PHYSICS
G01R31/2891
PHYSICS
G01R1/07342
PHYSICS
G01R31/2863
PHYSICS
International classification
Abstract
A wafer test cassette having a fluid inlet and a fluid outlet, includes a first housing, a second housing, a heat source, and an isolation device. The first housing includes a probe card including probes. The second housing is coupled to the first housing, so that a test space is defined. The second housing carries a wafer arranged in the test space, and the probes are electrical contact with an upper surface of the wafer. The heat source heats a lower surface of the wafer, and a high temperature region is defined between the lower surface and the second housing. The solation device surrounds the high temperature region for thermally isolating the high temperature region from the test space. The fluid inlet receives a gas, the gas flows between the probe card and the upper surface of the wafer, and exits through the fluid outlet.
Claims
1. A wafer test cassette, having at least one fluid inlet and at least one fluid outlet, and the wafer test cassette comprising: a first housing including a probe card, wherein the probe card includes at least one probe; a second housing coupled to the first housing, a test space being defined by the second housing and the first housing, wherein the second housing is configured to carry a wafer therein, the wafer is arranged in the test space, and the at least one probe is electrical contact with an upper surface of the wafer to perform a test process; a heat source configured to heat a lower surface of the wafer, wherein a high temperature region is defined between the lower surface and the second housing; and an isolation device surrounding the high temperature region for thermally isolating the high temperature region from the test space; wherein the at least one fluid inlet is configured to receive a gas, the gas circulates in the test space and is filled between the probe card and the upper surface of the wafer, and the gas is configured to exit through the at least one fluid outlet.
2. The wafer test cassette according to claim 1, wherein an air pressure in the test space is greater than an air pressure outside the test space.
3. The wafer test cassette according to claim 1, further comprising: a valve; a sensor; and a control circuit; wherein the sensor and the valve are correspondingly connected to the control circuit, and the valve is configured to open or close the at least one fluid outlet; wherein the sensor is configured to sense at least one of an air pressure or a temperature of the test space and transmit sensing information to the control circuit, and the control circuit controls the opening or closing of the valve according to the sensing information.
4. The wafer test cassette according to claim 1, further comprising at least one air extraction device connected to the at least one fluid outlet, wherein the at least one air extraction device is configured to increase a flow rate of the gas in the test space.
5. The wafer test cassette according to claim 1, further comprising an air intake device connected to the at least one fluid inlet, wherein the air intake device is configured to increase a flow rate of the gas in the test space.
6. The wafer test cassette according to claim 1, wherein the gas includes air or an inert gas.
7. The wafer test cassette according to claim 1, wherein a thermal conductivity of the gas is less than 0.026 W/m.Math.k.
8. The wafer test cassette according to claim 1, wherein a specific heat of the gas is less than 1.015 kJ/(kga.Math.K).
9. The wafer test cassette according to claim 1, wherein a part of the second housing corresponding to the high temperature region has a heat flow inlet and a heat flow outlet, the heat source is a hot air, and the hot air enters from the heat flow inlet and exits from the heat flow outlet.
10. The wafer test cassette according to claim 1, wherein the heat source corresponding to the wafer is arranged inside or outside of the second housing and configured to supply heat energy to heat the high temperature region or the wafer.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The described embodiments may be better understood by reference to the following description and the accompanying drawings, in which:
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DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS
[0027] The present disclosure is more particularly described in the following examples that are intended as illustrative only since numerous modifications and variations therein will be apparent to those skilled in the art. Like numbers in the drawings indicate like components throughout the views. As used in the description herein and throughout the claims that follow, unless the context clearly dictates otherwise, the meaning of a, an and the includes plural reference, and the meaning of in includes in and on. Titles or subtitles can be used herein for the convenience of a reader, which shall have no influence on the scope of the present disclosure.
[0028] The terms used herein generally have their ordinary meanings in the art. In the case of conflict, the present document, including any definitions given herein, will prevail. The same thing can be expressed in more than one way. Alternative language and synonyms can be used for any term(s) discussed herein, and no special significance is to be placed upon whether a term is elaborated or discussed herein. A recital of one or more synonyms does not exclude the use of other synonyms. The use of examples anywhere in this specification including examples of any terms is illustrative only, and in no way limits the scope and meaning of the present disclosure or of any exemplified term. Likewise, the present disclosure is not limited to various embodiments given herein. Numbering terms such as first, second or third can be used to describe various components, signals or the like, which are for distinguishing one component/signal from another one only, and are not intended to, nor should be construed to impose any substantive limitations on the components, signals or the like.
EMBODIMENTS
[0029] Referring to
[0030] In certain embodiments, the gas CA can include air or an inert gas. In addition, in certain embodiments, a thermal conductivity of the gas CA is less than 0.026 W/m.Math.k. Further, in certain embodiments, a specific heat of the gas CA is less than 1.015 kJ/(kga.Math.K).
[0031] In certain embodiments, the heat source 14 is a heater, but the present disclosure is not limited thereto. Further, in certain embodiments, the heat source 14 can also be hot air or hot gas, which will be described in the following embodiments.
[0032] In the present embodiment, the fluid inlet 113 and the fluid outlet 114 are correspondingly arranged in the first housing 11. However, in certain embodiments, one of the fluid inlet 113 and the fluid outlet 114 is arranged in the first housing 11, and another of the fluid inlet 113 and the fluid outlet 114 is arranged in the second housing 12, but the present disclosure is not limited thereto. When the plurality of probes 1111 are configured to perform the test process, the gas CA circulates in the test space S1 and then is discharged, so as to avoid the heat energy caused by the wafer 13 during a burn-in process affecting operations the probe and a tester to which the probe is electrically connected.
[0033] Referring to
[0034] Referring to
[0035] In certain embodiments, when the plurality of probes 1111 are configured to perform the test process, the first housing 11 and the second housing 12 are in a tightly coupled state, and an air pressure in the test space S1 is greater than an air pressure outside the test space S1. In this way, a discharge at a tip of the probe 1111 to the wafer 13 can be suppressed, and damage to the wafer 13 due to a corona discharge can be avoided.
[0036] Referring to
[0037] Referring to
[0038] Referring to
[0039] Referring to
Beneficial Effects of the Embodiments
[0040] In conclusion, one of the beneficial effects of the present disclosure is that in the wafer test cassette provided by the present disclosure, by virtue of the isolation device surrounding the high temperature region for thermally isolating the high temperature region from the test space, and the fluid inlet being configured to receive the gas, the gas circulating in the test space and flowing between the probe card and the upper surface of the wafer, and the gas being configured to exit through the at least one fluid outlet, the gas is filled between the probe card and the upper surface of the wafer and used to isolate the high temperature region, thereby preventing the probe card from being affected by the high temperature of the wafer when the test process is performed and protecting a test device of the wafer test cassette (e.g., the probe card) as well as a test end (e.g., the tester), thus improving efficiency of the test process using the wafer test cassette.
[0041] The foregoing description of the exemplary embodiments of the disclosure has been presented only for the purposes of illustration and description and is not intended to be exhaustive or to limit the disclosure to the precise forms disclosed. Many modifications and variations are possible in light of the above teaching.
[0042] The embodiments were chosen and described in order to explain the principles of the disclosure and their practical application so as to enable others skilled in the art to utilize the disclosure and various embodiments and with various modifications as are suited to the particular use contemplated. Alternative embodiments will become apparent to those skilled in the art to which the present disclosure pertains without departing from its spirit and scope.