Nanostructured titania semiconductor material and its production process

Abstract

A nanostructured titania semiconductor material termed TSG-IMP having a predetermined crystal size is produced by a sol-gel method by adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, subjecting the acidic solution to agitation under reflux conditions; stabilizing the medium and adding bidistilled water under reflux until gelation; subjecting the gel to aging until complete formation of the titania which is dried and calcined.

Claims

1. A nanostructured titania semiconductor material TSG-IMP consisting of crystalline amorphous phases: anatase, brookite and rutile, in the following proportions: TABLE-US-00017 Activation Crystalline Amorphous phase (%) Temperature General ( C.) Anatase Brookite Rutile 200-300 60-70 30-40 350-550 75-80 12-17 5-12.

2. A nanostructured titania semiconductor material TSG-IMP, according to claim 1, having the following crystal sizes for crystalline amorphous phase: TABLE-US-00018 Activation Crystalline Amorphous Phase (nm) Temperature General ( C.) Anatase Brookite Rutile 200-300 6-20 6-20 350-550 20-23 12-17 31-37.

3. A nanostructured titania semiconductor material TSG-IMP, according to claim 1, having the following crystal dimension: TABLE-US-00019 Activation Crystal Dimension Temperature (nm) ( C.) General 200-300 6-12 350-550 15-30.

4. A nanostructured titania semiconductor material TSG-IMP, according to claim 1, having the following textural properties: TABLE-US-00020 Activation Surface Area Average Pore Temperature (m.sup.2/g) Diameter () ( C.) General General 200-300 180-250 30-50 350-550 60-100 70-110.

5. A nanostructured titania semiconductor material TSG-IMP, according to claim 1, having the following band gap energy (Eg) values: TABLE-US-00021 Band gap Energy (Eg) Activation (eV) Temperature ( C.) General 200-300 3.30-3.90 350-550 3.00-3.20.

6. A nanostructured titania semiconductor material TSG-IMP, according to claim 1, having the following hydroxylation degrees: TABLE-US-00022 Activation Temperature Hydroxylation ( C.) Degree* 300 5.67706-12.88881 500 1.50975-3.92518. *Deconvolutions determined at 300 C.

7. The titania semiconductor material of claim 1, wherein said titania semiconductor material is obtained by activating titania at a temperature of 200 C. to 300 C., and where said titania semiconductor material comprises 63% to 67% anatase having a crystal size of 7-19 nm, and 33% to 37% brookite having a crystal size of 7-19 nm, a surface area of 190-200 m.sup.2/g, and an average pore diameter of 35-45 angstroms.

8. The titania semiconductor material of claim 1, wherein said titania semiconductor material is obtained by activating titania at a temperature of 350 C. to 550 C., and where said titania semiconductor material comprises 76% to 78% anatase having a crystal size of 7-19 nm, 13% to 15% brookite having a crystal size of 13-14 nm, and 75 to 12% rutile having a crystal size of 33-34 nm, a surface area of 70-90 m.sup.2/g, and an average pore diameter of 75-95 angstroms.

9. A nanostructured titania semiconductor material TSG-IMP of claim 1, wherein said titania semiconductor material is obtained by a process comprising the following steps: I). preparing an alcoholic solution by adding, to a reflux system with constant agitation, a titanium alkoxide to an alcoholic solution; II). Producing a solution in acid medium by adding an acid to the alcoholic solution of step I) controlling the pH from 1 to 5; III). Hydrolyzing the solution in acid medium obtained in step II) by stirring and reflux conditions at a temperature of 70 to 80 C., stabilize the medium and adding bidistilled water, in a water/alkoxide molar ratio of 1-2/0.100-0.150, continuing reflux until gel formation; IV). Aging the gel obtained in step III) under the same agitation and reflux of step III), for 1 to 24 hours, for the total titania formation; V). drying the nanostructured titania obtained in step IV), at a temperature of 50 to 80 C., for a 1 to 24 hour period; and VI). Activation or calcination of the dry titania obtained in step V), to a calcination step at a temperature of 200 to 600 C., for a 1 to 12 hours.

10. The nanostructured titania semiconductor material of claim 9, wherein the titanium alkoxide used in step I), is three or four branched or linear carbons.

11. The nanostructured titania semiconductor material of claim 9, wherein the alcoholic solution used in step I), is three or four linear or branched carbon alcohols.

12. The nanostructured titania semiconductor material of claim 9, wherein the preparation of solution in acid medium of step II), is performed at a pH of 2 to 3.

13. The nanostructured titania semiconductor material of claim 9, wherein the acid used in preparing solution in acid medium of step II), is selected of: hydrochloric acid, nitric acid and acetic acid.

14. The nanostructured titania semiconductor material of claim 9, wherein preparation of solution in an acid medium of step II), preferably is carried out with nitric acid.

15. The nanostructured titania semiconductor material of claim 9, wherein addition of bidistilled water in step III) is carried out dropwise.

16. The nanostructured titania semiconductor material of claim 9, wherein the water/alkoxide molar ratio used in step III) is 1-2/0.120-0.130.

17. The nanostructured titania semiconductor material of claim 9, wherein aging time of step IV) is from 4 to 12 hours.

18. The nanostructured titania semiconductor material of claim 9, wherein the drying of step V) is carried out at 60-70 C. for 4 to 12 hours.

19. The nanostructured titania semiconductor material of claim 9, wherein activation or calcination of step VI) is performed under an oxidizing or reducing atmosphere.

20. The nanostructured titania semiconductor material of claim 9, wherein activation or calcination of stage VI) is performed at 300-500 C. for 3 to 9 hours.

21. A catalyst for a heterogeneous or homogeneous catalytic process, wherein said catalyst comprises the titania semiconductor material of claim 1 and further comprises an active metal catalyst.

22. The catalyst of claim 21, wherein said titania semiconductor material is a coating on a matrix.

23. The catalyst of claim 21, wherein said titania semiconductor material is a film on a substrate.

24. A nanostructured titania semiconductor material obtained by activating titania at a temperature of 200 C. to 300 C., and where said titania semiconductor material comprises 60% to 70% anatase having a crystal size of 6-20 nm, and 30% to 40% brookite having a crystal size of 6-20 nm, a surface area of 180-250 m.sup.2/g, and an average pore diameter of 30-50 angstroms.

25. A nanostructured titania semiconductor material obtained by activating titania at a temperature of 350 C. to 550 C., and where said titania semiconductor material comprises 75% to 80% anatase having a crystal size of 20-23 nm, 12% to 17% brookite having a crystal size of 12-17 nm, a surface area of 60-100 m.sup.2/g, and an average pore diameter of 70-110 angstroms.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows a flowchart of the process of obtaining the titania nanostructured semiconductor material TSG-IMP.

(2) FIG. 2 integrates the infrared spectra on both the structure of the semiconductor material of nanostructured Titania TSGI5-IMP in Example 2, and the Commercial Titania Degussa P25, activated at 500 C. where OH groups are identified.

(3) FIG. 3 shows a graph of Fourier transform infrared spectroscopy (FTIR), that shows the unrefined deconvolution of hydroxyl OH group zone, determined at 300 C., for Commercial Titania Degussa P25, activated at 500 C.

(4) FIGS. 4 and 5 show graphs of Fourier transform infrared (FTIR) spectroscopy, wherein the unrefined and refined deconvolution are observed, respectively of hydroxyl OH group zone, determined at 300 C., for the semiconductor material of nanostructured Titania TSGI5-IMP of Example 2, activated at 500 C.

(5) FIGS. 6 and 7 show graphs of Fourier transform infrared (FTIR) spectroscopy, wherein the deconvolution is observed unrefined and refined respectively of hydroxyl OH group zone, determined at 300 C., for the semiconductor material Titania nanostructured TSGI3-IMP in Example 1, activated at 300 C.

(6) FIG. 8 shows the profile of crystal size distribution by TEM of some semiconductor materials TSG-IMP nanostructured titania, obtained by the process of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

(7) The present invention relates to a nanostructured titania semiconductor material, termed TSG-IMP and its production process via the sol-gel method, which basically consists of titanium oxide and as a main feature has its nanoscale dimension, which gives special physicochemical properties (textural and morphological), with ability to disperse and stabilize metal particles with high activity and selectivity mainly in catalytic processes.

(8) The semiconductor material of nanostructured titania TSG-IMP, obtained by the process of the present invention has advantages over the known products of this type, particularly in the dimension of its size and correspond with their physical and chemical properties that are determined by the type of interactions between the electrons, and between ions and electrons, by reducing the space where electrons can move it is possible that new effects appear due to the spatial confinement, which causes modifications on the energy levels in which electrons can be inside the particles.

(9) Because of this, and the fact that the surface to volume ratio is greatly increased, the nanoparticles of the semiconductor material TSG-IMP have new properties, which do not appear in the material in large quantities (in bulk), neither in the fundamental entities that constitute the solid.

(10) That is, the dimension of the crystal size of the titania nanostructures of semiconducting material TSG-IMP depends on the particular handling or the set of the sol-gel method variables such as the types of metal alkoxides of titanium used, the characteristics of solvents, the alkoxide/water ratio, and the medium in which the hydrolysis takes place, which can be acidic or basic.

(11) For a better understanding of the process of obtaining the titania nanostructured semiconductor material TSG-IMP, FIG. 1 presents a flowchart showing the steps comprising:

(12) I). Preparation of an alcoholic solution;

(13) II). Solution in acid medium;

(14) III). Hydrolysis;

(15) IV). Aging;

(16) V). Drying, and

(17) VI). Activation or calcination

(18) Step I) Preparation of an alcoholic solution may be regarded as the preparation of the feedstock, and comprises adding to a system with constant stirring reflux a titanium alkoxide of three or four linear or branched carbons to an alcoholic solution, with alcohols from three to four linear or branched carbons.

(19) Step II) Solution in acid medium, is the addition of an acid to the alcoholic solution obtained in step I), controlling the pH from 1 to 5, preferably 2 to 3, wherein the acid used is selected from: hydrochloric acid, nitric acid and acetic acid, nitric acid being preferred.

(20) Step III) Hydrolysis. involves subjecting the solution in an acidic medium obtained in step II), in conditions of constant stirring and refluxing at a temperature of 70 to 80 C., to stabilize the medium and proceed with the dropwise addition of bidistilled water, in a molar ratio of water/alkoxide 1-2/0.100-0.150, preferably 1-2/0.120-0.130, continuing the reflux until gel formation.

(21) Step IV) Aging, involves subjecting the gel obtained in step Ill) to an aging treatment to the same conditions of agitation and reflux of step Ill), for a period of 1-24 hours, preferably 4-12 hours for complete formation of the titania.

(22) Step V) Drying, consists of drying the nanostructured titania obtained in step IV), at a temperature of 50 to 80 C., for a time from 1 to 24 hours, preferably at 60-70 C. for 4 to 12 hours.

(23) Step VI) Activation or calcination, involves subjecting the dry titania obtained in step V), to a calcination step, with the option of using an oxidizing or reducing atmosphere at a temperature of 200 to 600 C., for a time from 1 to 12 hours, preferably at 300-500 C. for 3 to 9 hours.

(24) The semiconductor material of TSG-IMP nanostructured titania, obtained by the process of the present invention has mainly the following new properties at different temperatures of activation:

(25) Physicochemical properties, mainly morphological, of the titania nanostructures of semiconducting material TSG-IMP are shown in Tables 1 and 2.

(26) Table 1 shows that the semiconductor material nanostructured titania TSG-IMP consisting of crystalline amorphous phases proportions: anatase, brookite and rutile.

(27) TABLE-US-00001 TABLE 1 Proportion of amorphous crystalline phases of titania nanostructures of semiconductor material TSG-IMP Crystalline Amorphous phase (%) Activation Temperature General/(Preferred) ( C.) Anatase Brookite Rutile 200-300 60-70 30-40 (63-67) (33-37) 350-550 75-80 12-17 5-12 (76-78) (13-15) (7-10)

(28) The morphological properties, relative to the proportion of amorphous crystalline phases of titania nanostructures of semiconducting material TSG-MP confer special properties to support, distribute and interact with active metals therein.

(29) Nanostructured titania semiconductor material TSG-IMP presents crystal sizes crystalline by amorphous phase as shown in Table 2.

(30) TABLE-US-00002 TABLE 2 Crystal sizes by crystalline amorphous phase on titania nanostructures of semiconducting material TSG-IMP Crystalline Amorphous phase (nm) Activation Temperature General/(Preferred) ( C.) Anatase Brookite Rutile 200-300 6-20 6-20 (7-19) (7-19) 350-550 20-23 12-17 31-37 (21-22) (13-14) (33-34)

(31) Crystal Dimension of Titania Nanostructures of Semiconducting Material Tsg-Imp are Shown in Table 3

(32) TABLE-US-00003 TABLE 3 Crystal dimension of titania nanostructures of semiconductor material TSG-IMP Activation Temperature Crystal size (nm) ( C.) General Preferred 200-300 6-12 8-10 350-550 15-30 20-25

(33) The size of the titania nanostructures of semiconducting material TSG-IMP affects textural properties thereof, particularly in: surface area, distribution of pore diameter and volume. The Textural Properties of the Titania Nanostructures of Semiconducting Material TSG-IMP are Shown in Table 4.

(34) TABLE-US-00004 TABLE 4 Textural properties of titania nanostructures of semiconductor material TSG-IMP Activation Surface Area Average Pore Temperature (m.sup.2/g) Diameter () ( C.) General Preferred General Preferred 200-300 180-250 190-220 30-50 35-45 350-550 60-100 70-90 70-110 75-95

(35) Textural properties in Table 4, on the surface area and pore diameter of the titania nanoparticles of the semiconductor material TSG-IMP, confer special properties to support and distribute active metals on the same.

(36) The Effect Called Quantum Size Effect.

(37) The dimension of the individual size of the titania nanostructures of semiconducting material TSG-IMP by crystalline amorphous phases affects the physicochemical properties of the same, particularly in the effect called quantum size effect, related to their electronic properties, mainly the band gap energy, also known as band gap (Eg), which particularly in semiconductor materials is that handles dynamics of electron-hole pair formation, on which depends its efficiency in redox processes in which it is applied.

(38) Commonly, in the semiconductor materials the goal is to decrease the Eg, but in the nanostructured titania semiconductor material TSG-IMP the effect on this particular value is special, that is, depending on the size of the nanostructure, not totally dependent on the value of Eg.

(39) Nanostructured titania semiconductor material TSG-IMP by the effect of crystal size dimension of amorphous crystalline phases present bandgap energy (Eg) values shown in Table 5.

(40) TABLE-US-00005 TABLE 5 Values Band gap Energy (Eg) of the titania nanostructures of semiconductor material TSG-IMP Activation Temperature Band gap Energy (Eg) (eV) ( C.) General Preferred 200-300 3.30-3.90 3.20-3.60 350-550 3.00-3.20 3.05-3.15

(41) Morphological property on the value of Eg of the semiconductor material nanostructured titania TSG-IMP gives special redox properties for use as support or catalyst in catalytic processes.

(42) Degree of Hydroxylation.

(43) The size of the titania nanostructures of semiconducting material TSG-IMP also affects, particularly the degree of hydroxylation as morphological property, as shown in FIGS. 2 to 7 and whose values are concentrated in Table 11.

(44) FIG. 2 integrates the infrared spectra on both the structure of the semiconductor material of nanostructured Titania TSGI5-IMP in Example 2, and the Commercial Titania Degussa P25, activated at 500 C., where OH groups are identified.

(45) FIG. 3 shows a graph of Fourier transform infrared (FTIR) spectroscopy, wherein the unrefined deconvolution is observed of hydroxyl OH group zone, determined at 300 C., for Commercial Degussa Titania P25 activated at 500 C., and Table 6 shows the results

(46) TABLE-US-00006 TABLE 6 Unrefined deconvolution of hydroxyl OH group Zone, determined at 300 C., for Commercial Titania Degussa P25, activated at 500 C. Peak Area 1 0.12597 2 0.40968 3 0.40857 4 0.05357 Total Area: 0.99779

(47) FIGS. 4 and 5 show graphs of Fourier transform infrared (FTIR) spectroscopy, wherein the unrefined and refined deconvolution are observed, respectively of hydroxyl OH group zone, determined at 300 C., for the semiconductor material Titania nanostructured TSGI5-IMP in Example 2, activated at 500 C., and in Tables 7 and 8 show the results

(48) TABLE-US-00007 TABLE 7 Unrefined deconvolution Zone OH hydroxyl groups, determined at 300 C., for nanostructured Titania Semiconductor Material TSGI5-IMP in Example 2, activated at 500 C. Peak Area 1 0.13293 2 0.09869 3 0.71748 4 0.56065 Total Area: 1.50975

(49) TABLE-US-00008 TABLE 8 Refined Deconvolution of hydroxyl OH group zone, determined at 300 C., for nanostructured Titania Semiconductor Material TSGI5-IMP in Example 2, activated at 500 C. Peak Area 1 0.58703 2 0.78711 3 0.92430 4 1.11660 5 0.51014 Total Area: 3.92518

(50) Hydroxylation degree of 1.50975 of nanostructured Titania Semiconductor Material TSGI5-IMP, is by 51% higher than 0,99779, the degree of hydroxylation of Commercial Titania Degussa P25, both values obtained for same conditions: using unrefined deconvolutions at 300 C., for those materials previously activated at 500 C.

(51) This implies that the material of the present invention considerably improves the degree of interaction of the OH groups on the surface (hydroxylation level), very important feature of semiconductor material nanostructured Titania TSG-IMP of the present invention as a catalytic material.

(52) To supplement the information supporting the hydroxylation degree values concentrated in Table 11, in FIGS. 6 and 7 graphs of Fourier transform infrared (FTIR) spectroscopy are shown, wherein the unrefined and refined deconvolution is observed respectively, of the hydroxyl OH group area, determined at 300 C., for nanostructured Titania Semiconductor Material TSGI3-IMP in Example 1, activated at 300 C., and Tables 9 and 10 show the results.

(53) TABLE-US-00009 TABLE 9 Unrefined deconvolution hydroxyl OH group Zone, determined at 300 C., for nanostructured Titania Semiconductor Material TSGI3-IMP in Example 1, activated at 300 C. Peak Area 1 0.37418 2 1.35672 3 2.05015 4 1.49360 5 0.40241 Total Area: 5.67706

(54) TABLE-US-00010 TABLE 10 Refined deconvolution of hydroxyl OH group zone, determined at 300 C., for nanostructured Titania Semiconductor Material TSGI3-IMP in Example 1, activated at 300 C. Peak Area 1 1.17050 2 3.63112 3 4.79078 4 2.90619 5 0.39022 Total Area: 12.88881

(55) TABLE-US-00011 TABLE 11 Degree of hydroxylation of the semiconductor material TSG-IMP Activation Hydroxylation Sample Temperature ( C.) Degree* TSGI3-IMP 300 5.67706-12.88881 TSGI5-IMP 500 1.50975-3.92518 TiO.sub.2 500 0.99779 Commercial** *Deconvolutions determined at 300 C. **Commercial Titania Degussa P25.

(56) The nanostructured titania semiconductor material TSG-IMP can be used mainly:

(57) a) To support of active metal or as catalyst itself;

(58) b) In heterogeneous or homogeneous catalytic processes for the reduction of pollutants present in gaseous and/or aqueous emissions, through thermal or photo assisted processes;

(59) c) As catalytic matrices coating, such as ceramic and/or metallic monoliths made from different kinds of materials; such catalytic matrices may have different geometric shapes, as well as different types and arrangements of cells or channels, in order to streamline both contact and the contact times;

(60) d) As a film on different substrates: glass, metals, polymers, etc., and

(61) e) Alone or with the addition of active metals, also with the purpose of controlling emissions of pollutants present in aqueous or gaseous emissions, using heterogeneous or homogeneous catalytic processes.

EXAMPLES

(62) Here are some examples to get a better understanding of the present invention without limiting its scope

Example 1

(63) A reflux system was used starting with 36.6 mL of titanium isopropoxide and 60 mL of 2-propanol maintained under constant stirring, and then the pH was adjusted to 2 with a hydrochloric acid solution. Once stabilized the medium under stirring and reflux conditions at 70 C., hydrolysis was carried out by adding dropwise 18 mL of bidistilled water in order to have a water/alkoxide molar ratio of 1/0.125, continuing the reflux until gelation, the solution was kept under stirring and reflux and start treatment of aging at 70 C. continued for 9 hours for complete formation of the titania. The titania nanostructured obtained was dried at 80 C. for 5 hours and finally the dry titania was calcined at 300 C. for 4 hours under nitrogen atmosphere. The catalyst obtained was identified as TSGI3-IMP and its texture and morphological properties are shown both in Tables 9 to 16, and in FIGS. 6 to 8.

Example 2

(64) From the titania prepared as in Example 1, the calcination process was conducted at 500 C. for 4 hours under nitrogen atmosphere. The catalyst obtained was identified as TSGI5-IMP and its texture and morphological properties are shown both in Tables 7, 8 and 11 to 16, and in FIGS. 4, 5 and 8

Example 3

(65) A reflux system was used, starting from 43.9 mL of titanium butoxide and 300 mL of butanol, maintained under constant stirring, then the pH was adjusted to 2 with nitric acid solution, once stabilized the medium under stirring and refluxing conditions at 70 C., the hydrolysis was carried out by adding dropwise 22 mL of bidistilled water in order to obtain a water/alkoxide molar ratio of 2/0.125, continuing the reflux until gelation, the solution was kept under stirring and reflux and start treatment of aging at 70 C. continuing for 9 hours for complete formation of the titania. The titania nanostructured obtained was dried at 80 C. for 5 hours and finally the dry titania calcined at 300 C. for 4 hours under oxidizing atmosphere. The catalyst was identified as TSGB3-IMP and its texture and morphological properties shown in both Tables 12 and 16, and in FIG. 8

Example 4

(66) From the titania prepared as in Example 3, the calcination process was conducted at 500 C. for 4 hours under nitrogen atmosphere. The catalyst obtained was identified as TSGI5-IMP and its texture and morphological properties are shown both in Tables 12 to 16, and in FIG. 8.

(67) TABLE-US-00012 TABLE 12 Textural properties by BET/BJH of nanostructured titania semiconductor material TSG-IMP Surface Pore Volume Average Pore Catalyst Area (m.sup.2/g) (cm.sup.3/g) Diameter () TSGI3-IMP 189 0.17 36 TSGI5-IMP 70 0.11 76 TSGB3-IMP 212 0.25 48 TSGB5-IMP 72 0.16 91 Commercial 50 0.15 116 TiO.sub.2* *Commercial Titania Degussa P25, activated at 500 C.

(68) TABLE-US-00013 TABLE 13 Morphological properties by XRD-Rietveld refinement of nanostructured titania semiconductor material TSG-IMP Crystalline Amorphous Crystal Size (nm) Phase (%) Sample Anatase Brookite Rutile Anatase Brookite Rutile TSGI3- 7.03 18.26 62.88 37.12 IMP TSGI5- 21.04 17.00 33.00 80.00 14.90 5.10 IMP TSGB3- 8.34 6.66 64.02 35.98 IMP TSGB5- 20.62 13.78 33.00 79.00 16.00 5.00 IMP

(69) TABLE-US-00014 TABLE 14 Average crystal size by XRD-Rietveld refinement of nanostructured titania semiconductor material TSG-IMP Average Crystal Size Catalyst (nm) TSGI3-IMP 7.52 TSGI5-IMP 22.32 TSGB3-IMP 9.08 TSGB5-IMP 20.09

(70) TABLE-US-00015 TABLE 15 Band Positions of Functional Groups by FTIR of nanostructured titania semiconductor material TSG-IMP Band Position (cm.sup.1) Vibrational Elongation Flexion Catalyst TiOH OH CH CH OH TSGI3-IMP 3,648 3,205 2,927 1,464 1,620 TSGI5-IMP 3,655 3,445 2,928 1,464 1,617 TSGB3-IMP 3,713 3,320 2,927 1,412 1,610 TSGB5-IMP 3,677 3,371 2,943 1,438 1,633

(71) TABLE-US-00016 TABLE 16 Energy ratio values of Bandgap UV-vis and Crystal Size of nanostructured titania semiconductor material TSG-IMP Crystal Crystalline Eg Size Amorphous Concentration Catalyst (eV) (nm) Phase (%) TSGI3-IMP 3.85 7.03 Anatase 62.88 18.26 Brookite 37.12 TSGI5-IMP 3.15 21.04 Anatase 80.00 17.00 Brookite 14.90 33.00 Rutile 5.10 TSGB3-IMP 3.35 8.34 Anatase 64.02 6.66 Brookite 35.98 TSGB5-IMP 3.1 20.62 Anatase 79.00 13.78 Brookite 16.00 33.00 5.00 TiO.sub.2 3.2 40 Anatase 70 Commercial* 60 Rutile 30 *Commercial Titania Degussa P25, activated at 500 C.