Abstract
A domain wall injector device uses electrical current passed across an interface between two magnetic regions whose magnetizations are aligned non-collinearly to create a domain wall or a series of domain walls in one of the magnetic regions. The method relies on a combination of innate fringing fields from the magnetic regions and the spin-transfer torque derived from the charge current. The device may be used to store data that are subsequently read out.
Claims
1. A method, comprising: injecting spin-polarized charge current across an interface between a first magnetic region and an adjoining, second magnetic region, thereby creating in the second magnetic region new domain walls that separate respective magnetic domains, wherein the first and second magnetic regions have non-collinear magnetizations; and detecting the orientation of the magnetization of the domains.
2. The method of claim 1, wherein a series of magnetic domain walls is created in the second magnetic region corresponding to data that are subsequently read out.
3. The method of claim 2, wherein the domain walls have a spatial separation determined by the magnitude of the current.
4. The method of claim 3, wherein the current includes current pulses.
5. The method of claim 4, wherein the current exceeds a threshold value below which domain walls are not injected into the second magnetic region.
6. The method of claim 5, wherein current below the threshold value is used to reset the second magnetic region to a state having no domain walls therein.
7. The method of claim 1, wherein the current has a duration of between 1 and 100 nanoseconds, the current being used to inject a preselected number of domain walls that is proportional to the duration of the current.
8. The method of claim 1, wherein said creating relies on a combination of (i) innate fringing fields from the first and second magnetic regions and (ii) spin-transfer torque derived from the current as it flows across the interface.
9. The method of claim 1, wherein the magnetization direction of the first magnetic region is perpendicular to that of the second magnetic region.
10. The method of claim 1, wherein the first and second magnetic regions together define a nanowire that is part of a racetrack memory device.
11. The method of claim 10, wherein the magnetization of the first magnetic region is parallel to a plane defined by the length and the width of the nanowire.
12. The method of claim 10, wherein the magnetization of the second magnetic region is perpendicular to a plane defined by the length and the width of the nanowire.
13. The method of claim 10, the nanowire has a width of less than 100 nm.
14. The method of claim 1, wherein the second magnetic region is formed from one or more layers of Co and Ni.
15. The method of claim 1, wherein the first magnetic region is formed from one or more layers of Co and Ni.
16. The method of claim 1, wherein the first magnetic region is located at one end of a magnetic racetrack device.
17. The method of claim 1, wherein the first and second magnetic regions have a Gilbert damping value below 0.01.
18. The method of claim 1, wherein the first and second magnetic regions are initially formed from the same material.
19. The method of claim 18, wherein the first magnetic region is formed by ion bombardment of a magnetized region whose magnetization is initially perpendicular to the orientation of the magnetized region.
20. The method of claim 19, wherein the ions are selected from the group consisting of He+, Ar+, Ga+, and Ne+.
21. A method, comprising: injecting spin-polarized charge current into a nanowire having a width of less than 100 nm, the nanowire including a first magnetic region that adjoins a second magnetic region, the first magnetic region and the second magnetic region having (i) non-collinear magnetizations and (ii) innate fringing fields; creating domain walls in the second magnetic region by using spin-transfer torque derived from the current as electrons flow from the first magnetic region into the second magnetic region, wherein domains defined by the domain walls represent data; and reading out the data by detecting the orientation of the magnetization of the domains.
22. The method of claim 21, wherein a series of magnetic domain walls is created in the second magnetic region corresponding to data that are subsequently read out.
23. The method of claim 21, wherein the domain walls have a spatial separation determined by the magnitude of the current.
24. The method of claim 21, wherein the nanowire is part of a racetrack memory device.
25. The method of claim 21, wherein the second magnetic region is formed from one or more layers of Co and Ni.
26. The method of claim 21, wherein the first magnetic region is formed from one or more layers of Co and Ni.
27. The method of claim 21, wherein the first magnetic region is located at one end of a magnetic racetrack device.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) FIG. 1, which includes FIGS. 1A and 1B, represents a schematic illustration of an exemplary operating environment in which a magnetic domain wall shift register system of the present invention can be used.
(2) FIG. 2, which includes FIGS. 2A and 2B, represents a schematic illustration of a preferred embodiment of the invention, which requires only a single uni-polar pulser. Domain walls can be sequentially injected and shifted across the racetrack memory by a pulse sequence consisting of only injection pulses (FIG. 2A) or by a pulse sequence that is composed of alternating injection and shift pulses (FIG. 2B).
(3) FIG. 3 represents a schematic illustration of the dense racetrack memory architecture made possible by the one-dimensional nature of the in-line injection.
(4) FIG. 4, which includes FIGS. 4A and 4B, represents a schematic illustration of the existing field based injection scheme used in the prior art. Domain walls are injected using local magnetic fields generated from a contact line oriented orthogonal to the nanowire underneath.
(5) FIG. 4A shows a prior art configuration that requires a total of three pulsers: two uni-polar pulsers for injection of domain walls and one shift pulser for the shifting of domain walls.
(6) FIG. 4B shows a prior art configuration that uses a single bi-polar pulser for injection of domain walls and a secondary shift pulser for shifting domain walls.
(7) FIG. 5A shows the resistance vs. magnetic field in the hard axis direction (in-plane) for a region irradiated by 10.sup.12 ions/cm.sup.2 and resistance vs. magnetic field in the hard axis direction (out-of-plane) for a region irradiated by 310.sup.14 ions/cm.sup.2.
(8) FIG. 5B shows the dependence of the anisotropy field as a function of ion irradiation dose. Positive and negative effective anisotropy values denote out-of-plane and in-plane easy axes, respectively.
(9) FIG. 6, which includes FIGS. 6A, 6B, 6C, and 6D, shows a process flow for creating (in a magnetic nanowire) lithographically defined in-plane regions, which are also self-aligned to contacts, through use of a broad beam ion source, in which:
(10) FIG. 6A shows an opening being patterned by using e-beam lithography onto an e-beam resist (here: poly(methyl methacrylate) or PMMA), which has been deposited on top of an already existing e-beam patterned device.
(11) FIG. 6B shows the ion beam irradiation step using a broad beam ion source.
(12) FIG. 6C shows the 180 nm thick gold deposition step used for making an electrical contact to the device.
(13) FIG. 6D shows the lift-off of the gold in which an electrical contact is formed.
(14) FIGS. 7A and 7B show the optical microscope image of a nanowire device, along with schematics of the circuit and pulse sequences, with polar magneto-optical Kerr effect (MOKE) microscope measurements of domain walls injected by in-line injection in nanowires for negative (FIG. 7A) and positive (FIG. 7B) current pulses.
(15) FIGS. 7C and 7D show the occurrence of injection o.sub.inj for negative (FIG. 7A) and positive injection pulses (FIG. 7B) as a function of injection pulse number n.sub.inj.
(16) FIG. 8A shows a scanning electron microscope image of the nanowire device and a schematic of the circuit used in an embodiment of this invention. The anomalous Hall effect is used in this case to detect the local magnetization in the magnetic nanowire.
(17) FIG. 8B shows the Hall resistance as a function of magnetic field, with the shaded signals at R.sub.H0.38 and R.sub.H0.40 corresponding to downward and upward magnetization states, respectively.
(18) FIG. 8C shows the magnetic field H, Hall resistance R.sub.H, and injection voltage V.sub.inj with experimental iteration for a nanowire, which is 70 nm wide, where the nanowire is reset with H and a single injection pulse is applied. Upward-pointing triangles denote reset operation, circles signify when the field is brought back to zero, and downward-pointing triangles indicate points during the experiment where pulses are applied along the nanowire.
(19) FIG. 8D summarizes the occurrence of injection o.sub.inj as a function of n.sub.inj for the experimental data shown in FIG. 8C.
(20) FIG. 9 shows H, R.sub.H and V.sub.inj with experimental iteration for the same nanowire as in FIG. 8, showing successive injection of a series of domain walls. Multiple pulses are applied to the nanowire sequentially after each reset operation. R.sub.H is measured after each injection pulse.
(21) FIG. 10A is a schematic illustration of the magnetization texture (white arrows) near the irradiated section of the magnetic nanowire, showing the 90 magnetization interface thus formed between the in-plane magnetized and out-of-plane magnetized regions. The lines emanating outside of the nanowire denote the fringing fields from the storage region adjacent to the 90 magnetization interface, which act on the in-plane writing region. The darkened arrows in the x-z plane denote the direction of the magnetization rotation due to the spin transfer torque. The darkened arrows in the x-y plane denote the anti-clockwise precession of the magnetization that is caused by the damping torque.
(22) FIG. 10B shows the trajectory of the average magnetization unit vector of the irradiated section of the magnetic nanowire. The initial magnetization has a small +z component due to the exchange interaction with the adjacent out-of-plane magnetized region.
(23) FIG. 10C shows time-resolved evolution of the magnetization components and the internal energy of the irradiated section of the nanowire. The solid line segments denote the magnetization evolution during the formation of a domain oriented towards the z direction, and the dashed line segments denote the magnetization evolution during the formation of a domain oriented towards the +z direction.
(24) FIG. 10D shows the internal energy change in the irradiated section of the nanowire for longer times. A domain wall is injected into the nanowire when the internal energy of the irradiated portion is maximized.
(25) FIG. 11A presents a time-resolved micromagnetic simulation showing the continuous injection of domain walls observed in narrow nanowires (70 nm wide). The irradiated region is to the left of the dashed lines.
(26) FIG. 11B presents the formation of a series of domain walls after 20 ns of constant electron current flow.
(27) FIG. 11C presents a time-resolved micromagnetic simulation showing the incoherent injection of domain walls within wide nanowires (500 nm wide). The irradiated region is to the left of the dashed lines.
DETAILED DESCRIPTION
(28) The preferred embodiment of this invention, which is referred to herein as in-line injection (ILI), is shown in FIG. 2A and FIG. 2B. It consists of a magnetic nanowire extending along the length of these figures, where one end of the nanowire, in this case the left hand side (magnetic region 1), has an in-plane easy axis (as indicated by the arrow in magnetic region 1), and the remainder of the nanowire (magnetic region 2) includes various portions, each of which has an easy axis pointing either out-of-plane or into the plane (as indicated by the several arrows in magnetic region 2). Note that the dotted lines in the magnetic region 2 indicate that the domain represents more than one data bit. Electrical contacts are shown and indicated at the ends of the nanowires. These same contacts are used for both injecting domain walls as well as shifting them along the nanowire. The preferred methodology of this invention is implemented in nanowires, where the motion of domain walls along a nanowire is induced by electrical current through volume spin torques as opposed to interfacial spin hall torque.sup.1, 18. In the preferred embodiment, the domain walls are injected, as well as moved in the direction of the electron flow, e.g., using current whose duration is between 1 and 100 nanoseconds. The direction in which the domain walls are injected across the magnetic interface and the direction in which the domain walls move after injection are the same for the specific materials used and disclosed herein. (However, for other materials, the domain walls can be injected/moved in the direction opposite of the electron flow.) For example, in the currently described, preferred embodiment, which uses magnetic nanowire formed from alternating layers of Co and Ni (e.g., a few atomic layers of each may be deposited using any one of a number of ultrahigh vacuum thin film deposition techniques, such as sputtering and molecular beam epitaxy), the current becomes spin-polarized in the majority electron spin direction; however, the current is carried by minority spin polarized electrons in, for example: Cr doped Fe, a conventional magnetic metal; in Mn doped GaAs, a dilute magnetic semiconductor; in LaSrMnO.sub.x, a complex magnetic oxide; and in CrO.sub.2, a nominally half-metallic ferromagnet.
(29) In another example, in a magnetic metallic alloy formed from a rare-earth metal (such as Gd and/or Tb) and a 3d transition metal (such as Co and/or Fe), the current will be carried by either majority or minority spin polarized electrons depending on whether the temperature is above or below the compensation temperature. In a further example, the magnetic nanowire may be formed from a Heusler alloy (or compound) such as Co.sub.2MnSi, Co.sub.2FeAlSi, Mn.sub.3, Ga.sub.x, and Mn.sub.3-xGe.sub.x where x0.
(30) An advantageous aspect of the preferred embodiment is that only one uni-polar current pulser (e.g., any one of a number of commercially available nanosecond pulse generators may be used) is needed for injection and the shifting of domain walls (as shown in FIGS. 2A and 2B), thereby decreasing the complexity of the racetrack memory device. Moreover, the truly one-dimensional nature of the ILI geometry makes the racetrack memory architecture much more simplified and streamlined owing to its smaller footprint (FIG. 3) as compared to conventional designs. In FIG. 3, an array of nanowires is shown, in which each of the nanowires is like the nanowire shown in FIG. 2A or FIG. 2B. Such an array would be useful in the context of a memory storage device.
(31) By comparison, the prior art shown in FIG. 4 employs a local magnetic field to inject domain walls into a magnetic nanowire, thereby necessitating more current pulsers in the circuit than are needed in this invention. For instance, two possible configurations for local magnetic field-based injection are shown in FIG. 4, which can be used to inject up/down or down/up oriented domain walls with a local magnetic field and then shift them with spin transfer torque. In the prior art configuration shown in FIG. 4A, uni-polar injection pulsers on either side of the injection line, as well as one shift pulser to shift the domain walls in the racetrack, are needed. Alternatively, in the prior art configuration shown in FIG. 4B, one bi-polar injection pulser and one shift pulser are used. (The prior art configuration shown in FIG. 4A, in principle, could be modified to not use a shift pulser but rather only use two injection pulsers connected on either side of the injection line that delivers negative current pulses into the nanowire, so as to simultaneously shift the domain wall with spin transfer torque upon its creation.sup.19.) In both of the scenarios depicted, at least two injection pulsers are employed.
(32) Creation of the embodiment discussed above requires appropriately engineering the anisotropy of the magnetic sample. Reduction in the anisotropy is accomplished using ion bombardment in multilayered samples, which were composed of Si(O.sub.x)|100 AlO.sub.x|50 Ti.sub.60Ni.sub.40|3 Co| [7 Ni|1.50 Co].sub.6|50 TaN (the numbers representing the thickness of each layer in ) grown by magnetron sputtering and annealed at 270 C. for 1 hour to improve their perpendicular magnetic anisotropy (PMA). Annealed samples exhibit square hysteresis loops such that they are fully magnetized out-of-plane at remanence. The PMA of the films was reduced by irradiation with a 20 keV.sup.+ Ne ion beam. Owing to the anisotropic magnetoresistance (AMR) effect.sup.20, the anisotropy field H.sub.keff can be obtained from the resistance vs. field (R(H)) measurements with the field applied along the anisotropy hard axis (FIG. 5A) for samples with PMA and in-plane magnetic anisotropy (IMA). H.sub.keff is determined by fitting the data with a coherent rotation model.sup.21, which also accounts for slight misalignment of the magnetic field with respect to the anisotropy axis. As shown in FIG. 5B, the effective anisotropy constant K.sub.eff=H.sub.keffM.sub.S/2, where M.sub.S is the saturation magnetization, can be continuously controlled by adjusting the ion irradiation dose. The transition from PMA to IMA was found to occur at a dose of 10.sup.13 ions/cm.sup.2. The embodiments having the two anisotropy regions (see FIGS. 2 and 3) can be made at minimum lithographic dimensions through the use of ion irradiation. By using the process schematically shown in FIGS. 6A-D, for example, a broad beam ion source was used, as opposed to a focused ion beam system, to soften lithographically defined regions in the magnetic nanowires. Furthermore, it was possible to have these softened regions self-align to contacts placed on top of the nanowire. This process is very suitable for the fabrication of large numbers of nanowires with well-defined anisotropy landscapes.
(33) As shown in FIG. 6A, an opening is created using conventional e-beam lithography onto an e-beam resist (PMMA), which has been deposited on top of a pre-existing nanowire device. Thereupon, a 20 keV Ne.sup.+ ion beam is directed off-axis (e.g., by 10 degrees) onto the resist, thereby irradiating the exposed portion of the magnetic nanowire (seen in the lower left hand portion of FIG. 6B) and reducing its anisotropy. The formation of an electrical contact to the nanowire is shown in FIG. 6C, in which, by way of example, a 180 nm thick layer of gold is deposited onto the structure shown in FIG. 6B. The e-beam resist is subsequently removed as part of a lift-off step, as shown in FIG. 6D. Likewise, another electrical contact (not shown) can be formed on the right hand side of the structure shown in FIG. 6D, thereby forming a nanowire like those shown in FIGS. 2 and 3.
(34) One may also use focused ion beams to create these reduced anisotropy regions, as shown in the nanowire of FIG. 7A, which has been irradiated in its center through the use of a focused ion beam. Other techniques for locally changing the anisotropy include locally depositing a thin in-plane magnetic layer (such as permalloy) locally on top of the nanowire to drive the PMA in-plane through exchange coupling, etching using depth-controlled Ar.sup.+ ion etching with patterned etching masks.sup.22, and dynamically through the use of voltage control of the anisotropy.sup.23-24 or via spin polarized currents generated via the SHE in wires, formed from heavy metals such as Pt, Pd or Ir or from Ta or W or from metal layers doped with heavy atoms, that are in proximity to the writing region of the racetrack.
(35) In order to visualize the ILI of domain walls, polar magneto-optical Kerr effect (MOKE) microscopy measurements were performed on nanowires made from a PMA magnetic stack by standard lithography techniques, such as those discussed in connection with FIG. 6. The wire shown in FIGS. 7A and B is 60 m long and 1 m wide. The irradiated area created by a Ga.sup.+ focused ion beam in the center of the nanowire is 23 m.sup.2, and the dose (flux) of the ions corresponds to 10.sup.14 ions/cm.sup.2. FIGS. 7A and B show evidence of in-line domain wall injection in the nanowire as five repetitions of 1 injection pulse (12 mA; current density, j2.910.sup.8 A/cm.sup.2, 50 ns long) followed by 8 propagation pulses (7.9 mA; j1.910.sup.8 A/cm.sup.2, 25 ns long) are passed along the nanowire. Switching the polarity of the pulse waveform also switches the side of the central injection site where the domain walls get injected into the nanowire. The direction of the domain wall injection is the same as the direction of the electron current, implying that the domain walls get created because of the large spin transfer torque from the electron flow at the 90 magnetization interface, as discussed above. The directionality of domain wall injection also precludes domain wall nucleation due to heating of the nanowire. FIGS. 7C and D summarize the occurrence of domain wall injection, o.sub.inj (defined as 1 when a domain wall gets injected and 0 when no domain wall gets injected) as a function of the injection pulse number n.sub.inj. Note that in each of FIGS. 7C and 7D, the probability of injection (P.sub.inj) is about 50%.
(36) Even though the injection process is rather stochastic in these wide nanowires, it provides a proof-of-concept that domain walls can indeed be injected by spin transfer torque. This stochasticity can be understood from micromagnetic simulations, described below. This understanding can now be applied to explore ILI in much narrower (70 nm wide) nanowires. FIG. 8A shows a scanning electron micrograph (SEM) of a typical device along with a schematic of the circuit used in this invention. First, a 70 nm wide and 8 m long nanowire is fabricated from a thin film PMA magnetic stack (with effective anisotropy K.sub.eff=H.sub.keffM.sub.s510.sup.5 erg/cm.sup.3, where the effective anisotropy field, H.sub.keff2 kOe and M.sub.s is the saturation magnetization; K.sub.eff>0 corresponds to the easy axis of the magnetization being out-of-plane) by electron beam lithography and Ar.sup.+ ion milling. An 80 nm wide TaN Hall bar (30 nm thick) is then patterned on top of the nanowire.
(37) Due to the limitation of using visible light, polar-MOKE microscopy measurements cannot be performed on such small dimensions. Instead, the anomalous Hall resistance across the Hall bar, R.sub.H, which changes between two distinct values depending upon whether the portion of the nanowire beneath the Hall bar is magnetized in the +z or in z direction (FIG. 8B), is used to study the switching behavior of the nanowire. Note that in order to perform R.sub.H measurements, a current of 200 A (j6.310.sup.7 A/cm.sup.2) is continuously passed through the nanowire, which is large enough for a domain wall, once injected, to creep through the nanowire.sup.25. In order to obtain spin transfer torque for domain wall injection, the irradiated part is not entirely beneath the injection line (see FIGS. 6B, 6C, and 6D), which avoids having all the current short through the thick gold injection line, instead of flowing across the 90 magnetization interface. Remarkably, the probability of domain wall injection in such narrow nanowires (FIGS. 8C and D) is much higher (100%) than that in the wide nanowires studied under the polar-Kerr microscope (FIGS. 7C and D).
(38) Furthermore, it is now experimentally shown that consecutive up/down and down/up domain walls can be continuously injected by ILI (see FIG. 9). In this experiment, the nanowire is first reset by a large field of 950 Oe, which is turned off before a series of five uni-polar pulses (V.sub.inj=1.9 V corresponding to a current of 712 A, j2.210.sup.8 A/cm.sup.2 and pulse width 6 ns) is applied. Remarkably, the domain walls can be injected and shifted out of the nanowire repeatedly by applying the same injection pulse. This is highlighted in FIG. 9, which shows that the Hall bar resistance toggles between high and low levels as up/down and down/up domain walls move past it successively. Applying a pulse of opposite polarity (+2 V) so that the electron current flows in the opposite direction, i.e., from the PMA into the IMA region, does not inject any domain wall in the nanowire. To confirm that domain walls are actually injected at the irradiated site rather than spuriously because of current-induced nucleation, it was also verified that no domain wall injection occurs when current pulses up to 2 V in amplitude and 100 ns in pulse width are applied to a non-irradiated nanowire.
(39) Micromagnetic simulations.sup.26 were performed to elucidate the mechanism based on spin transfer torque for domain wall injection in the ILI scheme. The simulated wire is 3000701 nm.sup.3 and the cell size used for the simulation is 551 nm.sup.3. The anisotropy of the nanowire is 1.910.sup.6 erg/cm.sup.3, M.sub.s=400 emu/cm.sup.3 and A=1.2 erg/cm. A polarization of 0.4 was used and the non-adiabatic spin torque parameter ==0.01, in which is the Gilbert damping coefficient. The anisotropy is reduced in a 7070 nm.sup.2 sized region at the left hand side of the nanowire to 7.510.sup.5 erg/cm.sup.3, which causes the magnetization in that region of the nanowire to point in-plane, thus forming the writing region.
(40) The relaxed configuration shows a gradient in the magnetization at the 90 magnetization interface due to a combination of the exchange energy and the anisotropies of the two regions. When an electron current is injected from the IMA towards the PMA region, the spin transfer torque given by
(41)
(here, b.sub.J is the adiabatic spin transfer torque coefficient.sup.27 and {right arrow over (m)} is the unit vector local moment) is experienced in the direction as shown in FIG. 10A, which causes the local moments to turn in the anti-clockwise direction in the x-z plane. This leads to a damping torque, given by
(42)
(again, is the Gilbert damping coefficient) that causes the magnetization of the IMA region to precess in the x-y plane in the anti-clockwise direction. At the same time, the magnetization of the IMA region picks up a component in the z direction due to the fringing field from the adjacent PMA region (FIG. 10A). This is why a transient down/up domain wall gets formed, which subsequently gets extracted into the PMA segment (here: the storage region) of the nanowire due to spin transfer torque.
(43) The time evolution of the various components of magnetization of the irradiated IMA region (FIGS. 10B and C) shows that the domain wall gets extracted after the magnitude of the z-component magnetization and consequently the internal energy of the initially in-plane magnetized irradiated region gets maximized (FIGS. 10C and D). Upon injection of a domain wall, the PMA region next to the 90 magnetization interface switches its orientation, thereby also changing the direction of its fringing field as experienced by the IMA region. It is this reversal of the field direction along with the reversal of the spin transfer torque and damping torques that causes the precession of the IMA region to first slow down and then reverse its direction. Hence, for a constant current that exceeds a threshold value, the IMA region keeps switching its rotation direction (FIG. 10C and FIGS. 11A and B), and after each time the IMA region does so, a domain wall gets injected into the nanowire.
(44) The IMA region, being small for such narrow nanowires, is strongly exchange coupled and behaves as a single magnetic entity. However, when the dimensions of the IMA region are much larger than the magnetic exchange length.sup.28, for example in a wider nanowire (FIG. 11C), the in-line domain wall injection process is not as well controlled because multiple domains are formed in the irradiated region. When the size of the IMA region is less than 100 nm, for the material parameters used here, the IMA region does indeed behave as a single magnetic entity. This accounts for the stochastic injection of domain walls in the wide nanowires (FIGS. 7C and D) as compared to high fidelity injection in narrow nanowires (FIGS. 8D and 9). Thus, the ILI mechanism is expected to be even more reliable for narrower nanowiresa prerequisite for higher data density racetrack memories. Also, note that the Gilbert damping of these films is typically on the order of 0.01. The injection process can be more energy efficient, as the damping gets reduced by, for example, choosing different materials.
(45) For a fixed DC current density above the writing threshold, which is also above the current density for shifting domain walls, the domain walls are continuously injected into the nanowire, with the spacing determined by the magnitude of the DC current. On the other hand, if a series of domain walls already exists in the storage region, application of the DC current in the reverse direction will cause the domain walls to propagate back to the writing region, thereby resetting the nanowire (so that the PMA region has no domain walls). The magnetization of the storage region will be reset, so that it has the same orientation as the magnetization of the domain farthest away from the writing region at the start of the process.
(46) One may also use this DC current to electrically set the nanowire in the reset state without the use of any magnetic fields. This can be accomplished by first setting a part of the storage region that is adjacent to the writing region in the desired magnetic orientation through the use of a current pulse of the correct magnitude along the nanowire. The magnitude and temporal length of this pulse is too small to create more than one domain wall in the storage region. Next, a current smaller than the threshold for domain wall injection is flowed into the device so that the domain walls are shifted out away from the writing region. Because the current for moving domain walls is smaller than that required for injecting domain walls, no new domain walls will be injected, and the ones in the nanowire will be shifted out of the nanowire away from the writing region, leaving the magnetization of the nanowire with the same orientation as that of the region next to the writing region at the start of the process.
(47) The application of a DC current above the threshold for domain wall injection through the nanowire causes a continuous stream of domain walls to be injected into the nanowire. However, the spacing between the domain walls is fixed for a given DC current density, and so the encoded data stream is also fixed. Introduction of arbitrary domain patterns or information streams in the nanowire requires the use of pulsed DC currents, whereby the magnitude, pulse length, and number of the current pulses used for injecting the domain walls sets the magnetization pattern that is written into the nanowire.
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