DEVICE AND METHOD FOR PERMANENT BONDING

Abstract

A method and corresponding device for permanent bonding of a first layer of a first substrate to a second layer of a second substrate on a bond interface, characterized in that a dislocation density of a dislocation of the first and/or second layer is increased at least in the region of the bond interface before and/or during the boding.

Claims

1-8. (canceled)

9. A method for permanent bonding of a first layer of a first substrate to a second layer of a second substrate at a bond interface, the method comprising: increasing a dislocation density of a dislocation in the first and/or second layer at least in the region of the bond interface before and/or during bonding of the first layer to the second layer, wherein the dislocation is a one-dimensional lattice defect, mounting a substrate stack, comprised of the first and the second substrates, on a wafer chuck, the wafer chuck allowing a deformation of the first and/or the second layer, wherein the wafer chuck and/or a pressure plate are concave and/or convex shaped during a pressure application to apply pressure on the entire surface of the substrate stack for bonding the first and the second layers, and wherein the wafer chuck and/or the pressure plate are deformed before and/or during the pressure application to increase the dislocation density of the dislocation at least in the region of the bond interface.

10. The method as claimed in claim 9, wherein the method further comprises: increasing the dislocation density by delivering at least one oscillation, each oscillation applying a load to the substrate stack, wherein the at least one oscillation is delivered by an oscillation apparatus operating in the ultrasonic range.

11. The method as claimed in one of claim 9, wherein a bond temperature is a maximum of 300 C. during bonding of the first layer to the second layer.

12. The method as claimed in claim 9, wherein the first layer and/or the second layer is metallic and the first substrate and/or second substrate is a semiconductor.

13. The method as claimed in claim 10, wherein delivering said at least one oscillation with a minimum resulting force that is greater than 0 superimposes a compressive force f on the first and the second substrates that acts transversely to the bond interfaces.

14. The method as claimed in claim 9, wherein the dislocation density is increased by delivering a plurality of oscillations.

15. The method as claimed in claim 12, wherein the first layer and/or the second layer is Cu.

16. A device for permanent bonding of a first layer of a first substrate to a second layer of a second substrate at a bond interface, the device comprising: a wafer chuck for receiving the first substrate, wherein a substrate stack comprised of the first and the second substrates is mounted on the wafer chuck, the wafer chuck allowing a deformation of the first layer and/or the second layer; and a pressure plate for loading the first and the second substrates to increase a dislocation density of a dislocation of the first layer and/or the second layer at least in the region of the bond interface, wherein the dislocation is a one-dimensional lattice defect, wherein the wafer chuck and/or the pressure plate is concave and/or convex shaped during a pressure application to apply pressure to the entire surface of the substrate stack for bonding the first and the second layers, and wherein deformation of the wafer chuck and/or the pressure plate before and/or during the pressure application increases the dislocation density of the dislocation of the first layer and/or the second layer at least in the region of the bond interface.

17. The device as claimed in claim 16, wherein the device further comprises: locating bearings for supporting the wafer chuck and/or the pressure plate, wherein the wafer chuck and/or pressure plate are supported by the locating bearing on their respective back sides.

18. The device as claimed in claim 16, wherein the loading of the first and the second substrates takes place by delivery of at least one oscillation, each oscillation applying a load to the substrate stack.

19. The device as claimed in claim 18, wherein the loading of the first and the second substrates takes place by delivery of a plurality of oscillations.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0055] FIG. 1a shows a schematic cross section of a coated substrate and an enlargement of the microstructure of the coating,

[0056] FIG. 1b shows a schematic cross section of a coated substrate and an enlargement of the microstructure of the coating after an increase of the dislocation density.

[0057] FIG. 1c shows a schematic cross section of two coated substrates after the contact-making process and an enlargement of the microstructure of the coatings,

[0058] FIG. 1d shows a schematic cross section of two coated substrates after a bond process and an enlargement of the recrystallized microstructure which has taken place via the bond interface,

[0059] FIG. 2a shows a schematic cross section of a first embodiment of the invention which acts directly on the surface of a substrate and leads immediately to regeneration of the structure beyond the bond interface,

[0060] FIG. 2b shows a schematic cross section of a first embodiment of the invention which acts directly on the surface of a substrate and does not lead to regeneration of the structure beyond the bond interface,

[0061] FIG. 3a shows a schematic cross section of a second embodiment of the invention in a first state,

[0062] FIG. 3b shows a schematic cross section of the second embodiment of the invention in a second state,

[0063] FIG. 3c shows a schematic cross section of the second embodiment of the invention in a third state,

[0064] FIG. 3d shows a schematic of a loading diagram of the second embodiment of the invention,

[0065] FIG. 4a shows a schematic cross section of a third embodiment of the invention in a first state,

[0066] FIG. 4b shows a schematic cross section of the third embodiment of the invention in a second state,

[0067] FIG. 4c shows a schematic cross section of the third embodiment of the invention in a third state,

[0068] FIG. 4d shows a schematic of a loading diagram of the third embodiment of the invention,

[0069] FIG. 5 shows a schematic, not to scale, of a first embodiment of a device of the invention for producing a blanket bending oscillation,

[0070] FIG. 6 shows a schematic, not to scale, of a second embodiment of a device of the invention for producing a blanket bending oscillation,

[0071] FIG. 7 shows a schematic, not to scale, of a third embodiment of a device of the invention for producing a blanket bending oscillation,

[0072] FIG. 8 shows a schematic, not to scale, of a fourth embodiment of a device of the invention for producing a blanket shear oscillation,

[0073] FIG. 9 shows a schematic, not to scale, of a fifth embodiment of a device of the invention for producing a blanket static compressive stress,

[0074] FIG. 10 shows a schematic, not to scale, of a sixth embodiment of a device of the invention for producing a static compressive stress with material-referenced compliance of the wafer chuck and

[0075] FIG. 11 shows a schematic, not to scale, of a seventh embodiment of a device of the invention for producing a static compressive stress with a construction-engineering compliance of the wafer chuck.

DETAILED DESCRIPTION OF THE INVENTION

[0076] FIG. 1a shows a substrate 1 with a layer 2 applied to a substrate surface 1o, in particular a metal layer, especially preferably a Cu layer. The enlargement represents a microstructure of the layer 2 comprised of several grains 3. In the case of very small layer thicknesses t, there can also be only one grain 3 in the direction of the layer thickness. The layer surface 2o of the layer 2 and the substrate surface 1o are generally provided with roughness which does not disappear. In particular the roughness is negligibly small, especially preferably it is not present at all. The roughness is specified either as the average roughness, the quadratic roughness or as averaged peak-to-valley height. The determined values for the average roughness, the quadratic roughness and the averaged peak-to-valley height differ generally for the same measured distance or measured area, but are of the same range of magnitude. Therefore the following ranges of numerical values for the roughness should be understood either as values for the average roughness, the quadratic roughness or for the averaged peak-to-valley height. The roughness is in particular less than 100 m, preferably less than 1 m, still more preferably less than 100 nm, most preferably less than 10 nm, most preferably of all less than 1 nm.

[0077] At this point the dislocation density is increased in the grains 3 of the layer 2 by any method of the invention. Several dislocations 4 arise. The grains 3 for this reason pass into grains 3 with a correspondingly high dislocation density. The energy state of the grains 3 is at least partially, preferably predominantly, metastable.

[0078] Two substrates 1, 1 which have been prepared by one of the embodiments of the invention with layers 2, 2 are at this point brought into contact with one another or bonded to one another. In making contact between the two substrates with functional units, a prior alignment of substrates to one another can be necessary. In one special embodiment the dislocation density in the layers 2, 2 of the substrates 1, 1 is increased before and/or after making contact. In this state the two layers 2, 2 of the substrates 1, 1 are in close contact with one another and are in a metastable state.

[0079] FIG. 1d shows the successful regeneration of the structure by recrystallization beyond a bond interface 5. The regeneration of the structure by recrystallization is initiated preferably by an especially slight temperature increase. The temperature increase is initiated either by one of the embodiments of the invention or is carried out in an external furnace which is separate from the embodiment of the invention, in particular a continuous furnace. A main idea of the invention is that the temperature of the regeneration of the structure can be lowered to an extreme degree by the increased dislocation density of the grains 3. The temperature during bonding is in particular less than 300 C., preferably less than 200C, more preferably less than 150 C., especially preferably less than 100 C., most preferably less than 50 C. In one special embodiment the average roughness of the substrate surface 1o is less than 100 m, preferably less than 10 m, more preferably less than 1 m, most preferably less than 100 nm, most preferably of all less than 10 nm.

[0080] In order to carry out the bond process shown in FIGS. 1a-1d, several inventive embodiments are presented below which could effect the increase of the dislocation density in the grains 3. It is mentioned once again that the increase of the dislocation density in each layer 2 of each substrate 1 can be produced before and/or after the two substrates make contact. FIGS. 1a-1b show the production of a dislocation-rich layer 2 before the actual bond process.

[0081] In a first embodiment of the invention an oscillation apparatus 6 is used which can move along one substrate back 1r in one direction of motion. One contact surface 6k of the oscillation device 6 is in particular smaller than the substrate surface 1o. The ratio between the contact surface 6k and the substrate surface 1o is in particular smaller than , preferably smaller than , more preferably smaller than 1/10, most preferably smaller than 1/20, most preferably of all smaller than 1/100. An extremely small contact surface 6k can transfer extremely high point forces to the substrate stack 8 which has been formed from the substrates 1, 1 which have made contact on the layers 2, 2 and thus to the layers 2.

[0082] The oscillation apparatus 6 places the substrate stack 8 locally under compressive stress by a preliminary compressive force and/or compressive prestress in the direction of one wafer chuck 7 for accommodating the substrate stack 8. Afterwards a periodic, preferably high frequency oscillation is superimposed on the positive compressive prestress F. The high frequency oscillation leads to a local cyclic load on the layers 2, 2. Due to the cyclic loads the layers 2, 2 are preferably exposed to a stress state which is suitable for producing dislocations 4 in the grains 3. The metallurgical prerequisites such as for example Frank-Read sources, for producing these dislocations are known to one skilled in the art. The oscillation apparatus 6 moves with a velocity V over the substrate stack 8 and in doing so is always loaded by a compressive force f. The oscillation apparatus 6 associated with the compressive force f yields a temperature of roughly 20-40% of the melting point of the layers 2, 2 and subsequently recrystallization occurs by which a nonpositive connection to the substrate stack occurs. In FIG. 2a the bond interface 5 has already been closed along a distance L since by the loading of the oscillation apparatus 6 dislocations 4 have already been delivered into the grains 3 and/or heat into the bond interface 5 sufficient to cause regeneration of the structure.

[0083] In many embodiments this in-situ regeneration of the structure could be undesirable and must be prevented by the correct choice of the process parameters so that a metastable structure with grains 3 is preserved up to the explicitly conducted heat treatment. This situation is shown in FIG. 2b. The oscillation apparatus 6 does produce dislocations 4 in the structures of the two layers 2 which are preferably welded at least in spots; recrystallization which is necessary for regeneration of the structure beyond the bond interface 5 preferably does not yet take place at this instant.

[0084] FIGS. 3a-3c show three (global) oscillation states of a second embodiment of the invention with an oscillation apparatus 6. This oscillation apparatus 6 is characterized in that the substrate stack 8 is deformed by a blanket oscillation which is extended over the entire bond interface of the substrate stack 8. The substrate stack 8 is pretensioned in doing so by a surface force f over the entire substrate surface 1o and is kept under pressure during the entire oscillation loading.

[0085] The embodiment of the invention has at least one lower wafer chuck 7 on which the substrate stack 8 can lie. Especially preferably there is opposite fixing, for example a pressure plate 10.

[0086] The force F which produces a local oscillation superposition to the surface force f is initiated on one oscillation area 9. By delivering a force in an especially local, preferably point oscillation region 9, the substrate stack is deflected in the direction of one normal to the substrate surface 1o, a counterforce Fg being produced in particular by one bearing at a time or one holder of the substrates 1, 1 or of the wafer chuck 7 and the pressure plate 10 at a time. The oscillation region 9 need not lie centrically, but can act on any position of the substrate surface 1o.

[0087] FIG. 3d shows a schematic of the force loading which changes over time and which is composed of the surface force f which is constant in time (broken line) and the superimposed, periodic, in particular local force application F. It is recognizable that the resulting force is always in the positive pressure domain so that the substrates 1, 1 are always pressed onto one another.

[0088] The force is delivered via the oscillation region 9 in particular via piezoelements, hydraulic, pneumatic or mechanically controlled pins which provide for the wafer chuck 7 and/or the pressure plate 10 and thus the substrate stack 8 to be deformed accordingly, in particular bent, based on the counterforce Fg which is aligned and/or congruent with the oscillation force F.

[0089] The bending produces in the layers 2, 2 a stress state and in this way the increased dislocation density. Instead of the wafer chuck 7 and/or the pressure plate 10, circular sleeve bearings would be conceivable on which the substrate stack 8 is supported. In this way the substrate surfaces 1o are directly accessible to the electrical, mechanical, pneumatic or hydraulic oscillation elements. Even an embodiment would be conceivable in which the circular support itself is produced from a piezomaterial. Afterwards the substrate stack is fixed on the circular support. The substrate stack 8 is brought accordingly into resonance by the piezo-oscillations of the circular support and oscillates under the initial and boundary conditions which are defined on the edge. Electrical, mechanical, pneumatic or hydraulic deformation elements in the center can be omitted by this special embodiment.

[0090] FIGS. 4a-4d show an analogous embodiment with the difference of a shear stress T acting on the substrate stack 8. The shearing of the substrate stack 8 in FIGS. 4a and 4c is shown exaggerated. The shear angle is only a few degrees. The shear angle is in particular smaller than 10, preferably smaller than 1, more preferably smaller than 0.1, most preferably smaller than 0.01, most preferably of all smaller than 0.001. For shearing of the substrate stack 8 there is preferably blanket contact-making of the substrate back 1r, in particular with a wafer chuck 7 and/or a pressure plate 10 according to FIG. 8.

[0091] FIG. 5 shows a first embodiment of the invention for producing a blanket bending oscillation comprising a wafer chuck 7 which is planar in particular in the resting state for accommodating and holding/fixing the substrate stack 8 and a pressure plate 10 which is planar in particular in the resting state. The wafer chuck 7 and the pressure plate 10 are fixed on their backs (7r, 10r) and/or peripheries via at least three point locating bearings 12 at a time or a single radially symmetrical locating bearing around the entire circumference. Two oscillation elements 11 which are made in particular as piezoelements are able to deflect the wafer chuck 7 and the pressure plate 10 normally to their surface and to expose to bending stress, in particular cyclically, the substrate stack 8 which is fixed between them. In particular the embodiment of the invention can also apply a preliminary compressive force f or prestress, preferably by moving one or both oscillation elements 11.

[0092] FIG. 6 shows a second embodiment of the invention for producing a blanket bending oscillation comprising a wafer chuck 7 and a pressure plate 10 which is planar in the resting state. The wafer chuck 7 is concavely shaped on its receiving side 7o. The pressure plate 10 is made analogously to the first embodiment according to FIG. 5. The substrate stack 8 is pressed into the static, concave shape of the wafer chuck 7 here by a single upper oscillation element 11. In particular the embodiment of the invention can also apply a preliminary compressive force f or prestress, preferably by moving the oscillation element 11 in the direction of the wafer chuck 7. The preliminary compressive force f is preferably applied to press the substrate stack 8 into the concave shape of the wafer chuck 7 and to expose it constantly to pressure in this curved shape. Afterwards preferably the superposition of the oscillating stress takes place by the oscillation element 11.

[0093] FIG. 7 shows a third embodiment of the invention for producing a blanket bending oscillating with a convex wafer chuck 7. Otherwise the structure and the function correspond to the second embodiment according to FIG. 6.

[0094] FIG. 8 shows a fourth embodiment of the invention for producing a blanket shear stress (see FIG. 4a to 4c). The substrate stack 8 is fixed by pressure between the planar wafer chuck 7.sup.IV and the planar pressure plate 10. Afterwards shearing of the substrate stack 8 takes place by opposite oscillating movement of the wafer chuck 7.sup.IV and the pressure plate 10 to one another. The movement takes place by means of oscillation elements 11 which are located on the side periphery of the wafer chuck 7.sup.IV and the pressure plate 10. The locating bearings 12 are used as fixing points for the oscillation elements 11 which are made in particular as piezoelements and which are each located between each locating bearing 12 and the wafer chuck 7.sup.IV of the pressure plate 10.

[0095] FIG. 9 shows a fourth embodiment of the invention with a pressure plate 10 and a static, concavely curved wafer chuck 7 analogously to FIG. 6. A preliminary compressive load f made as a surface load is applied to the pressure plate 10. The pressure plate 10 presses the substrate stack 8 (not shown) onto the concave wafer chuck 7 and in this way produces in the surfaces which have been bonded to one another a metastable state, in particular an increased dislocation density. Instead of the concavely formed wafer chuck 7, the convexly made wafer chuck 7 can be used in exactly the same way, as is shown in FIG. 7.

[0096] In particular the use of a wafer chuck 7 according to FIG. 10 is also possible; it comprises an elastic material such that it is brought into a concave shape only by the preliminary compressive force f which is applied via the pressure plate 10 (in this special case this is in particular the blanket bond force). The wafer chuck 7 behaves in particular elastically so that after removing the preliminary compressive force f, in particular a surface force, it returns again into its original initial position.

[0097] One aspect of the invention in this embodiment includes in particular in the adhesive friction between the surfaces which have not yet been bonded to one another prior to the process of the invention, while the preliminary compressive force f presses on the substrate stack and presses it, due to the elasticity of the material of the wafer chuck 7, into the latter. The wafer chuck 7 therefore yields, based on the material-specific parameters, such as the modulus of elasticity. In particular the wafer chuck 7 is deformed in an elastically concave manner when the modulus of elasticity of the wafer chuck 7 rises from the center toward the edge, the wafer chuck 7 therefore according to one preferred embodiment has a gradient of the modulus of elasticity and/or the surface force f does not constitute a steady load, but a surface load which deceases from the center to the edge.

[0098] FIG. 11 shows one especially preferred embodiment of a wafer chuck 7 which is fixed on locating bearings 12. The wafer chuck 7 can either lie directly on the locating bearings 12 or more preferably can lie on construction elements which are located between the wafer chuck 7 and the locating bearings 12. FIG. 11 therefore constitutes only a very schematic sketch. The idea of the invention is that the wafer chuck 7 which accommodates the substrate stack 8 is supported such that the force flows out via the locating bearings 12 when pressure is applied and the wafer chuck 7 is centrically bowed.

[0099] The locating bearings 12 are in particular radially symmetrical, fully circumferential locating bearings which are located in the position of the outer periphery of the wafer chuck 7. The pressure plate 10 which is opposite the wafer chuck 7 is preferably fixed on a pressure piston 13, in particular the pressure piston 13 of a bonder. The substrate stack 8 (not shown) which is positioned between the pressure plate 10 and the wafer chuck 7 is loaded by pressure by a relative approach of the pressure plate 10 and the wafer chuck 7 to one another, in particular by a movement of the pressure piston 13. The pressure piston 13 is preferably produced such that a centric point force during the advancing compressive loading is converted into a homogenous surface force.

[0100] In any case a transfer of a centric point force via the pressure piston 13 and the pressure plate 10 to the substrate stack 8 is also conceivable. Under this compressive loading the wafer chuck 7 and thus also the substrate stack 8 bow centrically and thus concavely, and are peripherally supported by the locating bearings 12. In contrast to the embodiment of the invention shown in FIG. 10, the concave bowing takes place, not on the basis of material-specific parameters such as a modulus of elasticity or a gradient of the modulus of elasticity, but on the basis of construction engineering features, in particular a solely peripheral, in particular completely circumferential support of the wafer chuck 7 by the locating bearings 12.

[0101] A substrate stack 8 and thus the individual substrates 1, 1 are in turn pushed toward one another by the aforementioned embodiment of the invention such that by loading, in particular friction between the layers 2, 2, an inventive effect of producing a metastable equilibrium, in particular of a structure with elevated dislocation structure is produced which subsequently leads to a more optimum joining of the two substrates 1, 1 via the layers 2, 2.

REFERENCE NUMBER LIST

[0102] 1, 1 substrate [0103] 1o substrate surface [0104] 1r substrate back [0105] 2, 2 layers [0106] 2o layer surface [0107] 3 grain [0108] 3 metastable grain with high dislocation density [0109] 4 dislocation [0110] 5 bond interface [0111] 6, 6 oscillation apparatus [0112] 6k contact surface [0113] 7,7,7,7,7.sup.IV wafer chuck [0114] 7r backs [0115] 8 substrate stack [0116] 9 point of force application [0117] 10, 10 pressure plate [0118] 10r backs [0119] 11 oscillating element, in particular piezoelement(s) [0120] 12 locating bearing [0121] 13 pressure piston [0122] T layer thickness [0123] v movement device/velocity [0124] f preliminary compressive force [0125] F; oscillation force [0126] L distance [0127] T shear stress [0128] Fg counterforce