Melt infiltration apparatus and method for molten metal control
09573853 ยท 2017-02-21
Assignee
Inventors
Cpc classification
C04B41/5177
CHEMISTRY; METALLURGY
C04B41/5133
CHEMISTRY; METALLURGY
C04B2235/616
CHEMISTRY; METALLURGY
B22F2999/00
PERFORMING OPERATIONS; TRANSPORTING
F05D2300/6033
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
C04B41/0018
CHEMISTRY; METALLURGY
C04B35/573
CHEMISTRY; METALLURGY
C04B35/80
CHEMISTRY; METALLURGY
C04B41/4523
CHEMISTRY; METALLURGY
C04B41/4523
CHEMISTRY; METALLURGY
C04B41/5133
CHEMISTRY; METALLURGY
B22F2999/00
PERFORMING OPERATIONS; TRANSPORTING
International classification
C04B41/00
CHEMISTRY; METALLURGY
C04B41/51
CHEMISTRY; METALLURGY
C04B35/80
CHEMISTRY; METALLURGY
C04B35/628
CHEMISTRY; METALLURGY
Abstract
A method and apparatus for providing molten metal infiltration into a component is provided.
Claims
1. An infiltration apparatus comprising: an infiltrant having a first melting point, an infiltrant source adapted to receive the infiltrant; a solid barrier having a second melting point, the solid barrier being selected from the group of materials consisting of Si/Zr, Si, SiC-coated silicon wafer, Zr/Si, ZrB.sub.2 and Ti; a component comprising a ceramic matrix composite; and a wick in fluid communication with the infiltrant source and the component, the wick being configured to draw the infiltrant from the infiltrant source into the component; wherein the second melting point is higher than the first melting point; and wherein the solid barrier is disposed between the infiltrant source and the component and coupled to the wick to block fluid communication through the wick until the infiltrant melts the barrier to allow the wick to draw the infiltrant from the infiltrant source into the component.
2. The infiltration apparatus of claim 1 wherein the infiltrant source includes an infiltrant well.
3. The infiltration apparatus of claim 2 wherein the barrier is disposed beneath the infiltrant well.
4. The infiltration apparatus of claim 1 wherein the infiltrant source includes a drain in fluid communication with the wick.
5. The infiltration apparatus of claim 4 wherein the barrier is received within the drain.
6. The infiltration apparatus of claim 1 wherein the barrier is displaced away from each of the infiltrant source and the component.
7. The infiltration apparatus of claim 1 wherein the barrier is disposed across a portion of the component.
8. The infiltration apparatus of claim 7 wherein the barrier is disposed across a bottom portion of the component.
9. The infiltration apparatus of claim 7 wherein the barrier is disposed across a top portion of the component.
10. An infiltration apparatus comprising: a melt infiltrant having a first melting point; a composite body adapted to receive the melt infiltrant to form a component; an infiltrant source adapted to store the melt infiltrant therein; a first wick configured to conduct the melt infiltrant between the infiltrant source and the composite body and a portion of the first wick being located above a top portion of the infiltrant source to draw the melt infiltrant upwardly above a top of the infiltrant source; and a barrier coupled to the first wick to block fluid communication between the infiltrant source and the component until the barrier melts, the barrier having a second melting point, and the second melting point being greater than the first melting point.
11. The infiltration apparatus of claim 10 further comprising a second wick configured to draw the melt infiltrant from the infiltrant source into the composite body to allow a portion of the melt infiltrant to bypass the barrier.
12. The infiltration apparatus of claim 11 wherein the barrier is disposed across a bottom portion of the composite body.
13. The infiltration apparatus of claim 10 wherein the barrier is selected from the group of materials consisting of Si/Zr, Si, SiC-coated silicon wafer, Zr/Si, ZrB.sub.2 and Ti.
14. The infiltration apparatus of claim 13 wherein the infiltrant is selected from the group of materials consisting of silicon, Si/C/B, Zr/Si, Zr and Ti/6Al/4V.
15. An infiltration apparatus comprising: an infiltrant having a first melting point, an infiltrant source adapted to receive the infiltrant and including a drain in fluid communication with the wick; a solid barrier having a second melting point and being received within the drain; a component; and a wick in fluid communication with the infiltrant source and the component, the wick configured to draw the infiltrant from the infiltrant source into the component; wherein the second melting point is higher than the first melting point; and wherein the barrier is disposed between the infiltrant source and the component and coupled to the wick to block fluid communication through the wick until the infiltrant melts the barrier to allow the wick to draw the infiltrant from the infiltrant source into the component.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE DRAWINGS
(13) For the purposes of promoting an understanding of the principles of the disclosure, reference will now be made to a number of illustrative embodiments illustrated in the drawings and specific language will be used to describe the same.
(14) Referring to the Figures an illustrative apparatus 10 and method for controlling melt transfer related to the manufacture of a ceramic matrix composite (CMC) and/or metal matrix composite is depicted and disclosed. For example, the illustrative apparatus may temporarily restrict the flow of molten metal or molten metalloid to a ceramic (CMC) or metal matrix composite 30.
(15) Illustratively, referring to the Figures, illustrative embodiments are depicted. As shown in
(16) The apparatus 10 illustratively is supported or carried by a suitable support structure such as for example and without limitation base plate 28 or other suitable support structure. It will be appreciated that a combination of support structures may also be used as depicted for example in
(17) As best seen in
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(21) Referring to
(22) The remaining
(23) It will also be appreciated that any combination of the foregoing barrier 14 placements and wicks 26, 26A-F shown in the Figures could be used to control the infiltration as desired. Also, multiple barriers 14 could be used in a single apparatus 10. In addition, any suitable infiltrant and barrier material and combinations thereof may be used. Some non-exhaustive examples of illustrative infiltrants 12 and higher melting point metal or dissolving barrier 14 are listed below along with some illustrative melting points. This list is illustrative only and not all inclusive.
(24) TABLE-US-00001 Infiltrant Barrier Pure Si Tmelt 1410 C. Si/Zr alloy where Tmelt is 1430 C. Si/C/B alloy Tmelt 1395 C. Pure Si Tmelt 1410 C. Pure Si Tmelt 1410 C. Pure silicon wafer coated with 1 m of SiC that dissolves in molten Si Zr/Si eutectic Zr/Si alloy with Tmelt 40 C. higher Pure Zr ZrB.sub.2 Ti/6Al/4V Pure Ti
(25) In illustrative operation, a material such as for example an alloy 14 with a higher melting temperature or a material that requires time in contact with the molten metal to dissolve into solution is employed between the component 30 and the infiltrating metal or metalloid infiltrant 12. This ensures that the component 30 to be infiltrated is uniformly above the melting point of the infiltrant 12. Illustratively, this process and apparatus 10 may be used for reactive melt infiltration processes wherein the reaction may restrict liquid flow so if a portion of the component is below the melting point local freezing of the metal may delay infiltration and during the delay the reaction may create restrictions to the infiltration that would proceed once the required temperature is achieved. Some further illustrative examples follow.
EXAMPLE 1
SiC/SiC CMC
(26) In an illustrative example, a Hi-Nicalon preform is constructed at 36% fiber volume and assembled in tooling for Chemical Vapor Infiltration (CVI). A boron nitride (BN) interface coating is applied at 0.5 m. A silicon-carbide (SiC) coating of about 2 m is applied by CVI. The CMC matrix is completed through slurry and melt infiltration 10. The slurry contains elements that react with the silicon to form ceramic compositions. Illustratively, the melt infiltration process is performed using a graphite crucible 20 or other suitable infiltrant source to hold an alloy of for example Si/C/B. As best seen in
EXAMPLE 2
C/SiC CMC
(27) In another illustrative example, a T-300 carbon fiber preform is constructed at 36% fiber volume and assembled in tooling for Chemical Vapor Infiltration (CVI). A pyrocarbon interface coating is applied at 0.5 m. A SiC coating of 8 m is applied by CVI. The CMC matrix or component 30 is completed through slurry and melt infiltration using the illustrative method and apparatus 10. The slurry contains elements that react with the silicon to form ceramic compositions. The melt infiltration process is performed by applying a Zr/Si alloy to a carbon wick 26. Referring to
(28) It will be appreciated that the ability to control the infiltration process as described and claimed herein illustratively results in a CMC component 30 that demonstrates improved mechanical performance. Further illustratively, the apparatus and method 10 may produce a CMC component 30 with a longer operational life, a reduced weight, and at a lower cost.
(29) While the disclosure has been illustrated and described in detail in the foregoing drawings and description, the same is to be considered as exemplary and not restrictive in character, it being understood that only illustrative embodiments thereof have been shown and described and that all changes and modifications that come within the spirit of the disclosure are desired to be protected.