HIGHLY WEAR RESISTANT DIAMOND INSERT WITH IMPROVED TRANSITION STRUCTURE
20170037687 ยท 2017-02-09
Inventors
- Nephi M. Mourik (Provo, UT)
- Peter T. Cariveau (Spring, TX, US)
- Frederico Bellin (The Woodlands, TX)
- Yu Fabg (Orem, UT, US)
Cpc classification
E21B10/5673
FIXED CONSTRUCTIONS
C22C26/00
CHEMISTRY; METALLURGY
C22C2026/008
CHEMISTRY; METALLURGY
E21B10/5735
FIXED CONSTRUCTIONS
C22C2204/00
CHEMISTRY; METALLURGY
C22C2026/006
CHEMISTRY; METALLURGY
International classification
Abstract
A cutting element includes a metallic carbide body, a first layer of polycrystalline diamond material, and at least one transition layer between the metallic carbide body and the first layer. The polycrystalline diamond material includes a plurality of interconnected diamond grains, first metal carbide particles, and a first binder material in interstitial regions between the interconnected first diamond grains, wherein the first metal carbide particles form a matrix in which the second diamond grains are dispersed and wherein the first metal carbide particles are present in the outer transition layer in an amount ranging from about 15 to 35 volume percent. The at least one transition layer includes a composite of diamond grains, second metal carbide particles, and a second binder material.
Claims
1. A cutting element comprising: a metallic carbide body; a first layer of polycrystalline diamond material, the polycrystalline diamond material comprising a plurality of interconnected diamond grains, first metal carbide particles, and a first binder material in interstitial regions between the interconnected first diamond grains, wherein the first metal carbide particles form a matrix in which the second diamond grains are dispersed and wherein the first metal carbide particles are present in the outer transition layer in an amount ranging from about 15 to 35 volume percent; and at least one transition layer between the metallic carbide body and the first layer, the at least one transition layer comprising a composite of diamond grains, second metal carbide particles, and a second binder material.
2. The cutting element of claim 1, wherein the first layer is on the outermost end of the insert.
3. The cutting element of claim 1, wherein the second binder material is present in the at least one transition layer in an amount ranging from 5 to 20 volume percent.
4. The cutting element of claim 1, wherein the at least one transition layer comprises two transition layers, a first transition layer adjacent the first layer and a second transition layer adjacent the carbide body.
5. The cutting element of claim 4, wherein the second transition layer has a greater metal carbide content than the first transition layer.
6. The cutting element of claim 5, wherein second carbide particles are present in the second transition layer in an amount ranging from 55-80 volume percent.
7. The cutting element of claim 5, wherein second carbide particles are present in the first transition layer in an amount ranging from 35-60 volume percent.
8. The cutting element of claim 1, wherein the first metal carbide particles and the second metal carbide particles comprise pre-cemented tungsten carbide particles.
9. A drill bit, comprising: a bit body; and at least one cutting element attached to the bit body, wherein the at least one bit body comprises: a metallic carbide body; a first layer of polycrystalline diamond material on the outermost end of the insert, the polycrystalline diamond material comprising a plurality of interconnected diamond grains, first metal carbide particles, and a first binder material in interstitial regions between the interconnected first diamond grains, wherein the first metal carbide particles form a matrix in which the second diamond grains are dispersed and wherein the first metal carbide particles are present in the outer transition layer in an amount ranging from about 15 to 35 volume percent; and at least one transition layer between the metallic carbide body and the first layer, the at least one transition layer comprising a composite of diamond grains, second metal carbide particles, and a second binder material.
Description
BRIEF DESCRIPTION OF DRAWINGS
[0017]
[0018]
[0019]
[0020]
[0021]
[0022]
DETAILED DESCRIPTION
[0023] In one aspect, embodiments disclosed herein relate to polycrystalline diamond enhanced inserts for use in drill bits, such as roller cone bits and hammer bits. More specifically, embodiments disclosed herein relate to polycrystalline diamond enhanced inserts having a polycrystalline diamond outer layer and at least one transition layer. Whereas a conventional approach to achieving a balance between hardness/wear resistance with toughness involves varying the formulation of materials (diamond, metal, carbides) used to form the polycrystalline diamond layer, embodiments of the present disclosure consider the entire insert structure, including selection of the outer layer in combination with selection of the at least one transition layer possessing a transition in at least one of the formulation components. In particular, embodiments of the present disclosure rely on a gradient in the diamond grain size between the outer layer and at least one transition layer.
[0024] Referring to
[0025] The polycrystalline diamond layer may include a body of diamond particles bonded together to form a three-dimensional diamond network where a metallic phase may be present in the interstitial regions disposed between the diamond particles. In particular, as used herein, polycrystalline diamond or a polycrystalline diamond material refers to this three-dimensional network or lattice of bonded together diamond grains. Specifically, the diamond to diamond bonding is catalyzed by a metal (such as cobalt) by a high temperature/high pressure process, whereby the metal remains in the regions between the particles. Thus, the metal particles added to the diamond particles may function as a catalyst and/or binder, depending on the exposure to diamond particles that can be catalyzed as well as the temperature/pressure conditions. For the purposes of this application, when the metallic component is referred to as a metal binder, it does not necessarily mean that no catalyzing function is also being performed, and when the metallic component is referred to as a metal catalyst, it does not necessarily mean that no binding function is also being performed.
[0026] The at least one transition layer may include composites of diamond grains, a metal binder, and metal carbide or carbonitride particles. One skilled in the art should appreciate after learning the teachings of the present disclosure contained this application that the relative amounts of diamond and metal carbide or carbonitride particles may indicate the extent of diamond-to-diamond bonding within the layer. Conventionally, the use of transition layer(s) is to allow for a gradient in the diamond content between the outer layer and the transition layer(s), decreasing from the outer layer moving towards the insert body, coupled with a metal carbide content that increases from the outer layer moving towards the insert body.
[0027] However, in addition to the use of a gradient in diamond/metal carbide content between the outer layer and transition layer(s), embodiments of the present disclosure provide for a gradient in the diamond grain size between the layers and/or a gradient in the tungsten carbide pocket and/or grain size between the layers. Thus, between the outer layer and the at least one transition layer, there exists a difference in one or more of diamond content, carbide content, diamond grain size, and tungsten carbide grain and/or pocket size. In a particular embodiment, there exists a difference in each of diamond content, carbide content, and diamond grain size. In a different particular embodiment, there exists a difference in each of diamond content, carbide content, diamond grain size, and tungsten carbide pocket and/or grain size. It is also within the scope of the present disclosure that there may be included a gradient in the binder content between the layers.
[0028] When using multiple transition layers, the gradient may be provided between the outer layer and at least one of the transition layers. Thus, it is within the scope of the present disclosure that in an embodiment that includes three transition layers, the diamond gradient may exist at least between the outer layer and the outer transition layer, where the intermediate transition layer and inner transition layer may independently be selected to have the same or gradient diamond grain size, as compared to the outer transition layer. Alternatively, the gradient may exist within the outer layer and the intermediate transition layer (with the outer transition layer having an average diamond grain size and/or average tungsten carbide grain and/or pocket size substantially the same as the outer layer).
[0029] In various embodiments, the gradient in the diamond grain size may result in an increase in the diamond grain size, as moving from the outer transition layer towards the insert body/substrate. It is theorized by the inventors of the present disclosure that the increase in diamond grain size may produce an even tougher transition layer (as compared to a transition layer having the same diamond grain size) due to the difference in distribution of the metallic phase interdispersed in the diamond structure. In particular, there is a proportional relationship between grain size and toughness and an inverse relationship between grain size and strength. Fine grain size PCD generally has high strength and low toughness, while coarse grain PCD generally has high toughness and low strength. A coarser diamond grain structure may reduce the diamond surface area and increase the size of the binder pockets, which may be a favorable structure for improved toughness and impact resistance. The combination of such a tough transition layer with a highly wear resistant outer layer results in a total insert structure that improves the stiffness and toughness of the diamond insert while maintaining abrasion resistance.
[0030] Thus, for example, the average diamond grain size used to form the polycrystalline diamond outer layer may broadly range from about 2 to 30 microns in one embodiment, less than about 20 microns in another embodiment, and less than about 15 microns in yet another embodiment. However, in various other particular embodiments, the average grain size may range from about 2 to 8 microns, from about 4 to 8 microns, from about 10 to 12 microns, or from about 10 to 20 microns. It is also contemplated that other particular narrow ranges may be selected within the broad range, depending on the particular application and desired properties of the outer layer. Further, it is also within the present disclosure that the particles need not be unimodal, but may instead be bi- or otherwise multi-modal. Depending on the average grain size selected for the outer layer, the grain size of the at least one transition layer may be selected to be greater than that of the outer layer, in one embodiment.
[0031] However, while the above discussion describes the use of a diamond grain size that increases when moving from the outer layer to at least one transition layer (towards to the insert body/substrate), it is also within the scope of the present disclosure that a larger grain size may be present in the outer diamond layer than at least one transition layer. For example, a coarser diamond grade outer layer used in combination with at least one transition layer having a finer diamond grade may result in a shrinking differential between the two layers during the cool-down after sintering. Specifically, use of an outer layer having coarser diamond grains (as compared to an adjacent transition layer) may result in greater shrinkage of the transition layer (as compared to the outer layer), putting the outer layer in compression. In such an embodiment, it may be optional to include more than one transition layers that may have a diamond grain size coarser than that of the fine diamond grain transition layer.
[0032] As described above, in addition to diamond forming the microstructure of the polycrystalline diamond layer, the three-dimensional microstructure may also include a metal binder (or catalyst), and optionally metal carbide, disposed in the interstitial regions of the network of diamond. In a particular embodiment, the metal binder may be present in the polycrystalline diamond outer layer in an amount that is at least about 3 volume percent. In other specific embodiments, the metal binder may be present in an amount that ranges between about 3 and 10 volume percent, is at least about 5 volume percent, or is at least about 8 volume percent. The metal binder content for a particular outer layer may be based upon, for example, the diamond grain size and the presence/amount of metal carbide in the layer. Generally, PCD with finer diamond grains may have greater abrasion resistance but lower toughness, thus, it may be desirable to increase the binder content for layers having finer grains to increase the toughness. Conversely, when using coarser diamond grains, i.e., greater than 10 microns, a layer may receive some toughness by virtue of the larger diamond grain size and thus there may be less need of the metal binder. However, it is also possible that more or less binder may be used depending on the desired properties of the layer. In a particular embodiment in which the diamond grains in at least one transition layer are greater than those of the outer layer, it may be desirable for the outer layer to have at least 91.5 volume percent, and at least 93 volume percent in another embodiment. Further, in an embodiment in which the diamond grains in at least one transition layer are smaller than those of the outer layer, it may be desirable for the outer layer to have no more than 90.5 volume percent, at no more than 89 volume percent in another embodiment.
[0033] Thus, it is also within the scope of the present disclosure that the polycrystalline diamond outer layer may include a composite of diamond and metal carbide (or carbonitride), with the metal catalyst/binder. In embodiments that include a metal carbide in the outer layer, those embodiments may include at most about 40 volume percent, at most about 9 volume percent of a metal carbide in another embodiment, less than about 7 volume percent of a metal carbide in other embodiments, and less than about 3 volume percent of a metal carbide in yet other embodiments. Those types of particles may include carbide or carbonitride particles of tungsten, tantalum, titanium, chromium, molybdenum, vanadium, niobium, hafnium, zirconium, or mixtures thereof. When using tungsten carbide, it is within the scope of the present disclosure that such particles may include cemented tungsten carbide (WC/Co), tungsten carbide (WC), cast tungsten carbide (WC/W.sub.2C), or a plasma sprayed alloy of tungsten carbide and cobalt (WCCo), which may collectively referred to as tungsten carbide powder. In a particular embodiment, for both the outer layer and transition layer(s), either cemented tungsten carbide or tungsten carbide may be used, with average powder grain size ranges of, for example, less than about 15 microns, less than about 6 microns, less than about 2 microns in another exemplary embodiment, less than about 1 micron in yet another exemplary embodiment, and ranging from about 0.5 to 3 microns in yet another embodiment. In a more particular embodiment, when the powder is formed of cemented tungsten carbide particles, the cemented tungsten carbide particles may be formed from individual tungsten carbide grains having an average grain size of less than about 2 microns, or less than about 1 micron in a more particular embodiment. In an alternative embodiment, when the powder is formed from tungsten carbide particles, those tungsten carbide particles may have an average grain size of less than about 1 microns, or less than about 1 micron in a more particular embodiment. In other embodiments, the one or more transition layers may include larger powder and/or tungsten carbide grain sizes.
[0034] During mixing and/or HPHT sintering, the carbide powder may agglomerate and join together during HPHT sintering to fill the space between diamond grains. These agglomerates may be referred herein to as pockets of tungsten carbide in the microstructure. In the outer layer, in a uniform microstructure, in one embodiment, the size of agglomerated carbide particles, i.e., carbide pockets, may depend on the size of the average powder size, but in a particular embodiment, the size of the agglomerated carbide grains may be less than the grain size of the diamond or in particular embodiment, may be less than 5 microns, less than 2 microns in a more particular embodiment, or ranging from about 1 to 2 microns in an even more particular embodiment. In the first transition layer, in a uniform microstructure, in one embodiment, the average pocket size of carbide may be greater than 10 microns, with the pocket size generally ranging from about 5-300 microns, with an average pocket size of about 10-30 microns in a more particular embodiment. In subsequent transition layer, as the volume percent of carbide increases, the carbide particles may form a matrix in which the diamond grains are dispersed, rather than pockets within a diamond matrix. However, carbide size may ultimately be selected based on desired properties of the layer(s) as well as the other layer components.
[0035] In one embodiment, the powder selection between the outer layers and one or more transition layers may be the same; however, in another embodiment, the powder size for the one or transition layers may be greater than the powder size for the outer layer. Alternatively, a gradient in the powder size may exist between the outer layer and the intermediate or inner transition layer (with the outer transition layer having an powder size substantially the same as the outer layer).
[0036] It is well known that various metal carbide or carbonitride compositions and binders may be used in addition to tungsten carbide and cobalt. Thus, references to the use of tungsten carbide and cobalt in the transition layers are for illustrative purposes only, and no limitation on the type of metal carbide/carbonitride or binder used in the transition layer is intended. When cemented tungsten carbide particles are used, the metal content in the particles may range, for example, from 4 to 8 weight percent, but may be greater than 8 or less than 4 weight percent depending on the desired properties of the layer in which they are incorporated.
[0037] The polycrystalline diamond outer layer may have a thickness of at least 0.006 inches in one embodiment, and at least 0.020 inches or 0.040 inches in other embodiments. In particular embodiments, the polycrystalline diamond outer layer may have a lesser thickness than the at least one transition layer. Selection of thicknesses of the diamond outer layer and the at least one transition layer may depend, for example, on the particular layer formulations, as described in U.S. Patent Application 61/232,122, filed Aug. 7, 2009, entitled Diamond and Transition Layer Construction with Improved Thickness Ratio (Attorney Docket Number 05516/431001), filed concurrently herewith, assigned to the present assignee and herein incorporated by reference in its entirety. However, depending on the particular layer formulations, it may also be desirable for the outer layer to have a greater thickness than at least one transition layer.
[0038] As used herein, the thickness of any polycrystalline diamond layer refers to the maximum thickness of that layer, as the diamond layer may vary in thickness across the layer. Specifically, as shown in U.S. Pat. No. 6,199,645, which is herein incorporated by reference in its entirety, it is within the scope of the present disclosure that the thickness of a polycrystalline diamond layer may vary so that the thickness is greatest within the critical zone of the cutting element. It is expressly within the scope of the present disclosure that a polycrystalline diamond layer may vary or taper such that it has a non-uniform thickness across the layer. Such variance in thickness may generally result from the use of non-uniform upper surfaces of the insert body/substrate in creating a non-uniform interface.
[0039] The at least one transition layer may include composites of diamond grains, a metal binder, and carbide or carbonitride particles, such as carbide or carbonitride particles of tungsten, tantalum, titanium, chromium, molybdenum, vanadium, niobium, hafnium, zirconium, or mixtures thereof, which may include angular or spherical particles. When using tungsten carbide, it is within the scope of the present disclosure that such particles may include cemented tungsten carbide (WC/Co), stoichiometric tungsten carbide (WC), cast tungsten carbide (WC/W.sub.2C), or a plasma sprayed alloy of tungsten carbide and cobalt (WCCo). The size ranges of carbides in the transition layer(s) may include those described above with respect to the outer layer. Further, it is well known that various metal carbide or carbonitride compositions and binders may be used in addition to tungsten carbide and cobalt. Thus, references to the use of tungsten carbide and cobalt in the transition layers are for illustrative purposes only, and no limitation on the type of metal carbide/carbonitride or binder used in the transition layer is intended.
[0040] The carbide (or carbonitride) amount present in the at least one transition may vary between about 15 and 80 volume percent of the at least one transition layer. As discussed above, the use of transition layer(s) may allow for a gradient in the diamond and carbide content between the outer layer and the transition layer(s), the diamond decreasing from the outer layer moving towards the insert body, coupled with the metal carbide content increasing from the outer layer moving towards the insert body. Thus, depending on the number of transition layers used, the carbide content of a particular layer may be determined. For example, the outer transition layer may possess a carbide content in the range of 15-35 volume percent, 20-40 volume percent, or less than 40 volume percent, while an intermediate layer may have a greater carbide content, such as in the range of 35-55 volume percent, 35-50 volume percent, 40-50 volume percent, or less than 60 volume percent. An innermost transition layer may have an even greater carbide content, such as in the range of 55-75 volume percent, 60-80 volume percent, 50-70 volume percent, or less than 80 volume percent. However, no limitation exists on the particular ranges. Rather, any range may used in forming the carbide gradient between the layers.
[0041] The metal binder content in the at least one transition layer may be in an amount that is at least about 5 volume percent, and between 5 and 20 volume percent in other particular embodiments. Selection of metal binder content for transition layer(s) may depend, for example, in part on the diamond grain size, the desired toughness, the desired gradient, and binding function.
[0042] Further, as discussed above, particular embodiments may possess a gradient in the diamond grain size that results in an increase in the diamond grain size, as moving from the outer transition layer towards the insert body/substrate. Thus, while the diamond grain size of the polycrystalline diamond outer layer may broadly range from 2 to 30 microns, the selection of the diamond grain size of the at least one transition layers depends on that selected for the outer layer, but may broadly range, for example, from 4 to 50 microns.
[0043] The presence of at least one transition layer between the polycrystalline diamond outer layer and the insert body/substrate may create a gradient with respect to thermal expansion coefficients and elasticity, minimizing a sharp change in thermal expansion coefficient and elasticity between the layers that would otherwise contribute to cracking and chipping of the PCD layer from the insert body/substrate.
[0044] It is also within the scope of the present disclosure that the cuttings elements may include a single transition layer, with a gradient in the diamond/carbide content within the single transition layer. The gradient within the single transition layer may be generated by methods known in the art, including those described in U.S. Pat. No. 4,694,918, which is herein incorporated by reference in its entirety.
[0045] The insert body or substrate may be formed from a suitable material such as tungsten carbide, tantalum carbide, or titanium carbide. In the substrate, metal carbide grains are supported by a matrix of a metal binder. Thus, various binding metals may be present in the substrate, such as cobalt, nickel, iron, alloys thereof, or mixtures, thereof. In a particular embodiment, the insert body or substrate may be formed of a sintered tungsten carbide composite structure of tungsten carbide and cobalt. However, it is known that various metal carbide compositions and binders may be used in addition to tungsten carbide and cobalt. Thus, references to the use of tungsten carbide and cobalt are for illustrative purposes only, and no limitation on the type of carbide or binder use is intended.
[0046] As used herein, a polycrystalline diamond layer refers to a structure that includes diamond particles held together by intergranular diamond bonds, formed by placing an unsintered mass of diamond crystalline particles within a metal enclosure of a reaction cell of a HPHT apparatus and subjecting individual diamond crystals to sufficiently high pressure and high temperatures (sintering under HPHT conditions) that intercyrstalline bonding occurs between adjacent diamond crystals. A metal catalyst, such as cobalt or other Group VIII metals, may be included with the unsintered mass of crystalline particles to promote intercrystalline diamond-to-diamond bonding. The catalyst material may be provided in the form of powder and mixed with the diamond grains, or may be infiltrated into the diamond grains during HPHT sintering.
[0047] The reaction cell is then placed under processing conditions sufficient to cause the intercrystalline bonding between the diamond particles. It should be noted that if too much additional non-diamond material, such as tungsten carbide or cobalt is present in the powdered mass of crystalline particles, appreciable intercrystalline bonding is prevented during the sintering process. Such a sintered material where appreciable intercrystalline bonding has not occurred is not within the definition of PCD.
[0048] The transition layers may similarly be formed by placing an unsintered mass of the composite material containing diamond particles, tungsten carbide and cobalt within the HPHT apparatus. The reaction cell is then placed under processing conditions sufficient to cause sintering of the material to create the transition layer. Additionally, a preformed metal carbide substrate may be included. In which case, the processing conditions can join the sintered crystalline particles to the metal carbide substrate. Similarly, a substrate having one or more transition layers attached thereto may be used in the process to add another transition layer or a polycrystalline diamond layer. A suitable HPHT apparatus for this process is described in U.S. Pat. Nos. 2,947,611; 2,941,241; 2,941,248; 3,609,818; 3,767,371; 4,289,503; 4,673,414; and 4,954,139.
[0049] An exemplary minimum temperature is about 1200 C., and an exemplary minimum pressure is about 35 kilobars. Typical processing is at a pressure of about 45-55 kilobars and a temperature of about 1300-1400 C. The minimum sufficient temperature and pressure in a given embodiment may depend on other parameters such as the presence of a catalytic material, such as cobalt. Typically, the diamond crystals will be subjected to the HPHT sintering the presence of a diamond catalyst material, such as cobalt, to form an integral, tough, high strength mass or lattice. The catalyst, e.g., cobalt, may be used to promote recrystallization of the diamond particles and formation of the lattice structure, and thus, cobalt particles are typically found within the interstitial spaces in the diamond lattice structure. Those of ordinary skill will appreciate that a variety of temperatures and pressures may be used, and the scope of the present disclosure is not limited to specifically referenced temperatures and pressures.
[0050] Application of the HPHT processing will cause diamond crystals to sinter and form a polycrystalline diamond layer. Similarly, application of HPHT to the composite material will cause the diamond crystals and carbide particles to sinter such that they are no longer in the form of discrete particles that can be separated from each other. Further, all of the layers bond to each other and to the substrate during the HPHT process.
[0051] It is also within the scope of the present disclosure that the polycrystalline diamond outer layer may have at least a portion of the metal catalyst removed therefrom, such as by leaching the diamond layer with a leaching agent (often a strong acid). In a particular embodiment, at least a portion of the diamond layer may be leached in order to gain thermal stability without losing impact resistance.
[0052] It is desired that such composite material display such improved properties without adversely impacting the inherent PCD property of wear resistance. It is desired that such composite material be adapted for use in such applications as cutting tools, roller cone bits, percussion or hammer bits, drag bits and other mining, construction and machine applications, where properties of improved fracture toughness is desired.
EXEMPLARY EMBODIMENTS
[0053] The following examples are provided in table form to aid in demonstrating the variations that may exist in the insert layer structure in accordance with the teachings of the present disclosure. Additionally, while each example is indicated to an outer layer with three transition layers, it is also within the present disclosure that more or less transition layers may be included between the outer layer and the carbide insert body (substrate). These examples are not intended to be limiting, but rather one skilled in the art should appreciate that further insert layer structure variations may exist within the scope of the present disclosure.
Example 1
[0054]
TABLE-US-00001 Layer Avg grain size (m) Binder % vol WC % vol outer 2-8 3 <3 second 5-15 >5 15-35 third 5-15 >5 35-60 fourth 5-15 >5 60-80
Example 2
[0055]
TABLE-US-00002 Layer Avg grain size (m) Binder % vol WC % vol outer 4-8 3 <3 second 8-12 >5 15-35 third 10-15 >5 35-55 fourth 12-20 >5 55-75
Example 3
[0056]
TABLE-US-00003 Layer Avg grain size (m) Binder % vol WC % vol outer 2-8 3 <3 second 4-8 >5 15-35 third 5-15 >5 35-60 fourth 5-15 >5 60-80
Example 4
[0057]
TABLE-US-00004 Layer Avg grain size (m) Binder % vol WC % vol outer 2-8 8 40 second 4-8 >8 40 third 5-15 >5 60 fourth 5-15 >5 80
Example 5
[0058]
TABLE-US-00005 Layer Avg grain size (m) Binder % vol WC % vol outer 4-8 3 40 second 5-15 >5 40 third 5-15 >5 60 fourth 5-15 >5 80
Example 6
[0059]
TABLE-US-00006 Layer Avg grain size (m) Binder % vol WC % vol outer 2-8 3 9 second 4-8 >5 15-35 third 5-15 >5 35-60 fourth 5-30 >5 60-80
Example 7
[0060]
TABLE-US-00007 Layer Avg grain size (m) Binder % vol WC % vol outer 10-12 3-10 <3 second 12-20 >5 15-35 third 12-20 >5 35-55 fourth 12-20 >5 55-75
Example 8
[0061]
TABLE-US-00008 Layer Avg grain size (m) Binder % vol WC % vol outer 10-12 3-10 <3 second 10-12 >5 15-35 third 12-20 >7 35-55 fourth 12-20 >8 55-75
Example 9
[0062]
TABLE-US-00009 Layer Avg grain size (m) Binder % vol WC % vol outer 2-3 (30%) & 8-16 (70%) 3 <3 second 4-8 >10 20-40 third 4-8 >12 40-50 fourth 4-8 >14 50-70
Example 10
[0063]
TABLE-US-00010 Layer Avg grain size (m) Binder % vol WC % vol outer 2-3 (30%) & 8-16 (70%) >3 <3 second 4-8 >5 20-40 third 10-20 >5 40-50 fourth 10-40 >5 50-70
Example 11
[0064]
TABLE-US-00011 Layer Avg grain size (m) Catalyst % vol WC % vol outer 10-20 3-10 <3 second 15-30 >5 20-40 third 15-50 >5 40-50 fourth 15-50 >5 50-70
[0065] An insert made in accordance with the present disclosure was created to have an outer layer and three transition layers atop a carbide substrate, with the components in the resulting microstructure listed in Example 12, below. A comparative insert was created to also have an outer layer and two transition layers, with the components in the resulting microstructure listed in Example 13, below.
Example 12
[0066]
TABLE-US-00012 Avg grain size Avg WC pocket Layer (m) Binder % vol WC % vol size (m) outer 5 7 8 2 second 12 5 25 15 third 12 7 40 continuous fourth 12 9 55 continuous-
Example 13
[0067]
TABLE-US-00013 Layer Avg grain size (m) Binder % vol WC % vol outer 5 9 0.5 second 5 9 35 third 5 11 50
[0068] Samples of each insert were subjected to a compressive fatigue test at a lower cyclic load at 20 Hz and an R ratio (min load/max load) of 0.1 with a target test life of 1,000,000 cycles. The number of cycles each sample achieved (to the target test life or to failure) are shown in Table 14 below.
TABLE-US-00014 TABLE 14 Sample No. Example 12 Example 13 1 500,000 900,000 2 1,000,000 (no failure) 500,000 3 1,000,000 (no failure) 1,000,000 (no failure) 4 1,000,000 (no failure) 600,000 5 1,000,000 (no failure) 600,000 6 1,000,000 (no failure) 7 500,000 8 100,000 9 300,000 10 200,000 11 400,000 12 100,000 Average 900,000 516,667
[0069] Two samples of each insert were also subjected to relative wear resistance tests under flood cooling conditions. A schematic of the test set-up is shown in
[0070] The cutting elements of the present disclosure may find particular use in roller cone bits and hammer bits. Roller cone rock bits include a bit body adapted to be coupled to a rotatable drill string and include at least one cone that is rotatably mounted to the bit body. Referring to
[0071] Hammer bits typically are impacted by a percussion hammer while being rotated against the earth formation being drilled. Referring to
[0072] The cutting inserts of the present disclosure may have a body having a cylindrical grip portion from which a convex protrusion extends. The grip is embedded in and affixed to the roller cone or hammer bit, and the protrusion extends outwardly from the surface of the roller cone or hammer bit. The protrusion, for example, may be hemispherical, which is commonly referred to as a semi-round top (SRT), or may be conical, or chisel-shaped, or may form a ridge that is inclined relative to the plane of intersection between the grip and the protrusion. In some embodiments, the polycrystalline diamond outer layer and one or more transition layers may extend beyond the convex protrusion and may coat the cylindrical grip. Additionally, it is also within the scope of the present disclosure that the cutting elements described herein may have a planar upper surface, such as would be used in a drag bit.
[0073] Embodiments of the present disclosure may provide at least one of the following advantages. In a typical drilling application, the outer diamond layer is subjected to impact cyclic loading. It is also typical for the diamond material to have multiple cracks that extend downward and inward. However, use of the layers of the present disclosure use a gradient in diamond grain size to result an insert structure that maintains the wear resistance of the outer layer while significantly boosting the toughness and stiffness of the entire insert through the transition layer(s). Additionally, the properties of the transition layer(s) may result in an equally tough layer, yet with greater wear resistance than conventional transition layers. Thus, while a conventional insert may quickly wear through a transition layer upon wearing through the outer layer, an insert formed in accordance with the embodiments of the present disclosure may possess a transition layer having a wear resistance more similar to an outer layer, thus resulting in slower wear through the transition layer upon wearing through the outer layer.
[0074] While the disclosure has been described with respect to a limited number of embodiments, those skilled in the art, having benefit of this disclosure, will appreciate that other embodiments can be devised which do not depart from the scope of the invention as disclosed herein. Accordingly, the scope of the invention should be limited only by the attached claims.