METHOD FOR PRODUCING ENERGY AND APPARATUS THEREFOR

Abstract

A method for producing energy by exothermal reactions between hydrogen and a transition metal comprises a step 110 of depositing an amount of crystals of the transition metal in the form of micro/nanometric clusters having a predetermined crystalline structure on a surface of a substrate, wherein each clusters has a number of atoms of the transition metal lower than a predetermined number of atoms, and in such a way that the substrate contains on its surface a number of clusters that is larger than a minimum number. The method provide also performing at least once a start-up sequence is performed at least once a start-up sequence comprising the step 114 of quantitatively removing any gas adsorbed in the substrate and in the transition metal by applying a predetermined vacuum degree, a step 120 of bringing hydrogen into contact with the crystals, a step 130 of heating the crystals up to an adsorption temperature higher than a predetermined critical temperature, thus causing hydrogen adsorption to the crystals forming a reaction core, and a step of impulsively acting on the reaction core in order to trigger the exothermal reactions between the hydrogen and the transition metal in the clusters. Once the reaction started, a step 140 is provided of removing heat from the reaction core in order to obtain a determined power and to maintain the temperature of the reaction core above the critical temperature.

Claims

1. A method for producing energy by exothermal reactions between hydrogen and a transition metal, said method providing the steps of: depositing an amount of crystals of said transition metal in the form of micro/nanometric clusters having a predetermined crystalline structure on a surface of a substrate consisting of a solid body that has a predetermined volume and shape, wherein each of said clusters has a number of atoms of said transition metal lower than a predetermined number of atoms, and in such a way that said substrate contains on its surface a number of clusters that is larger than a minimum number, in particular said minimum number is at least 10.sup.9 clusters per square centimetre, wherein a start-up sequence is performed at least once, said start-up sequence comprising the steps of: bringing and maintaining for a predetermined cleaning time said substrate and said crystals to/at a predetermined vacuum degree, in order to quantitatively remove gas adsorbed in said substrate and in said transition metal; bringing hydrogen into contact with said crystals; heating said crystals up to an adsorption temperature higher than a predetermined critical temperature, thus causing an adsorption of hydrogen to said crystals, said substrate, said crystals and said hydrogen adsorbed thereto forming a reaction core; impulsively acting on said reaction core in order to trigger said exothermal reactions between said hydrogen and said transition metal in said clusters; removing heat from said reaction core in order to obtain a determined power and to maintain the temperature of said reaction core above said critical temperature.

2. A method according to claim 1, wherein said step of depositing said amount of crystals is carried out in such a way that said determined quantity of crystals of said transition metal in the form of micro/nanometric clusters is proportional to said power.

3. A method according to claim 1, wherein said minimum number is at least 10.sup.10 clusters per square centimetre, in particular at least 10.sup.11 clusters per square centimetre, more in particular at least 10.sup.12 clusters per square centimetre;

4. A method according to claim 1, wherein said step of depositing said amount of crystals is effected by a process of physical deposition on said substrate of a metal vapour that is made of said transition metal.

5. A method according to claim 1, wherein said step of depositing said amount of crystals is carried out by a process selected from the group comprised of: sputtering; a process comprising an evaporation or a sublimation of said transition metal, and thereafter a condensation of said transition metal on said substrate; epitaxial deposition; spraying; heating said transition metal up to approaching the melting point and thereafter slow cooling said transition metal, in particular down to an average temperature of said reaction core of about 600 C.

6. A method according to claim 1, wherein after said step of depositing said amount of crystals a step is provided of quickly cooling said substrate and said deposited transition metal, in order to cause a freezing of said transition metal in the form of clusters having said crystalline structure, said step of quickly cooling selected from the group comprised of: tempering; causing a current of hydrogen to flow over said transition metal as deposited on said substrate, said hydrogen having a predetermined temperature that is lower than the temperature of said substrate.

7. A method according to claim 1, wherein said start-up sequence is iterated until said step of impulsively acting on said reaction core causes a permanent generation of heat, i.e. until a successful triggering of the reaction core occurs.

8. A method according to claim 1, wherein said vacuum degree is at least 10.sup.9 bar.

9. A method according to claim 1, wherein said substrate and said crystals are maintained at a temperature set between 350 C. and 500 C. during said cleaning time.

10. A method according to claim 1, wherein said step of bringing and maintaining said substrate and said crystals to/at a predetermined vacuum degree is performed according to at least ten vacuum cycles, each vacuum cycle comprising creating said vacuum and subsequently restoring a substantially atmospheric pressure of hydrogen.

11. A method according to claim 1, wherein during said step of bringing hydrogen into contact with said crystals said hydrogen has a partial pressure set between 0,001 millibar and 10 bar absolute, in particular between 1 millibar and 1 bar absolute.

12. A method according to claim 1, wherein during said step of bringing hydrogen into contact with said crystals said hydrogen flows at a speed lower than 3 m/s.

13. A method according to claim 12, wherein said hydrogen flows in a direction that is substantially parallel to a surface of said crystals deposited on said substrate.

14. A method according to claim 1, wherein after said heating step of said determined quantity of crystals a step is provided of cooling said reaction core down to room temperature, and said step of impulsively acting on said reaction core comprises a step of quickly rising the temperature of said reaction core from room temperature to said adsorption temperature, in particular said quick rise is carried out in a time shorter than five minutes.

15. A method according to claim 1, wherein said step of impulsively acting on said reaction core provides an impulsive action selected from the group comprised of: a thermal shock, in particular caused by a flow of a gas, in particular of hydrogen, which has a predetermined temperature that is lower than the reaction core temperature; a mechanical impulse, in particular a mechanical impulse whose duration is less than 1/10 of second; a pressure impulse, in which the pressure of hydrogen in contact with the crystals is suddenly increased or decreased by additionally supplying/withdrawing an amount of hydrogen; an ultrasonic impulse, in particular an ultrasonic impulse whose frequency is set between 20 and 40 kHz; a laser ray that is impulsively cast onto said reaction core; an impulsive application of a package of electromagnetic fields, in particular said fields selected from the group comprised of: a radiofrequency pulse whose frequency is larger than 1 kHz; X rays; y rays; an electrostriction impulse that is generated by an impulsive electric current that flows through an electrostrictive portion of said reaction core; an impulsive application of a beam of elementary particles; in particular, such elementary particles selected from the group comprised of electrons, protons and neutrons; an impulsive application of a beam of ions of elements, in particular of ions of one or more transition metals, said elements selected from a group that excludes O; Ar; Ne; Kr; Rn; N; Xe. an electric voltage impulse that is applied between two points of a piezoelectric portion of said reaction core; an impulsive magnetostriction that is generated by a magnetic field pulse along said reaction core which has a magnetostrictive portion.

16. A method according to claim 1, wherein before said step of impulsively acting on said reaction core a step is carried out of creating a temperature gradient, i.e. a temperature difference, between two points of said reaction core, said gradient in particular set between 100 C. and 300 C.

17. A method according to claim 1, wherein said clusters have a face-centred cubic crystalline structure, fcc (110).

18. A method according to claim 1, comprising step of maintaining a condition selected from the group comprised of: a magnetic induction field of intensity set between 1 Gauss and 70000 Gauss; an electric field of intensity set between 1 V/m and 300000 V/m during said step of removing heat from said reaction core.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0148] The invention will be made clearer with the following description of an exemplary embodiment thereof, exemplifying but not !imitative, with reference to the attached drawings in which:

[0149] FIGS. 1 and 19 are block diagrams of embodiments of the method according to the invention;

[0150] FIG. 2 is a diagrammatical view of a crystal layer that is formed by clusters deposited on the surface of a substrate;

[0151] FIG. 3 indicates the transition metals that are most adapted to be used in the method according to the invention;

[0152] FIG. 4 is a diagrammatical representations of a face-centred cubic crystalline structure;

[0153] FIG. 5 diagrammatically represents a body-centred cubic crystalline structure;

[0154] FIG. 6 diagrammatically represents a crystalline compact hexagonal structure;

[0155] FIG. 7 is a block diagram of the parts of the step of prearranging clusters of FIG. 1, to obtain a clusters surface structure;

[0156] FIG. 8 shows a typical temperature profile of what is shown in FIG. 7;

[0157] FIG. 9 shows a typical thermal profile of a the method;

[0158] FIG. 10 shows a reactor that is adapted to produce energy, according to the present invention, by an impulsively triggered exothermal reaction of hydrogen adsorbed on a transition metal;

[0159] FIG. 11 diagrammatically shows a device for preparing a reaction core according to the invention;

[0160] FIG. 12 diagrammatically shows a generator that comprises the reactor of FIG. 10 and the device of FIG. 11;

[0161] FIGS. 13 and 14 show an alternate exemplary embodiments of the reaction core according to the invention;

[0162] FIG. 15 shows a temperature gradient through a reaction core;

[0163] FIGS. 16a/b, 17a/b and 18a/b are diagrams showing the conditions of three start up events in three distinct cells prepared according to the method of the invention.

DESCRIPTION OF PREFERRED EXEMPLARY EMBODIMENTS

[0164] With reference to FIGS. 1 and 2, a method 100 according to the invention is described, for producing energy by a succession of exothermal reactions between hydrogen 31 and a transition metal 19.

[0165] In FIG. 3 the chemical elements which turned out to be suitable to react with hydrogen according to the method are indicated in the periodic table of elements. They are in detail, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Pd, Mo, Tc, Ru, Rh, Ag, Cd, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, lanthanoids, actinoids, an alloy of two or more than two of the above listed metals. They belong to one of the four transition metals groups, i.e.: [0166] metals that have a partially filled 3d-shell, e.g. Nickel; [0167] metals that have a partially filled 4d-shell, e.g. Rhodium; [0168] metals that have a partially filled 5d-shell, i.e. the rare earths or lanthanoids, e.g. Cerium; [0169] metals that have a partially filled 5d-shell, i.e. the actinonoids, e.g. Thorium.

[0170] According to method 100, a step 110 is provided of depositing an amount of crystals of the transition metal in the form of micro/nanometric clusters 21, for example a layer of clusters 20 on a substrate 22, this layer 20 defined by a surface 23. A crystal layer 20 of thickness d, preferably set between 1 nanometre and 1 micron is diagrammatically shown in FIG. 2. The metal is deposited with a process adapted to ensure that the crystals as deposited have normally a number of atoms of the transition metal lower than a predetermined critical number, beyond which the crystal matter looses the character of clusters.

[0171] In the case of prearranging the clusters on a substrate, the process of depositing is adapted to ensure that 1 square centimetre of surface 23 defines on average at least 10.sup.9 clusters 21.

[0172] During the step 110 of prearranging a metal transition crystals in the form of clusters 21, the predetermined number of atoms of the transition metal of the clusters is controlled by observing a physical property of the transition metal, chosen for example among thermal conductivity, electric conductivity, refraction index. These physical quantities have a net transition, when the number of atoms of a crystal aggregate exceeds a critical number above which the aggregate looses the properties of a cluster. For each transition metal, in fact is a number of atoms detectable below which a discrete level structure according to Kohn-Sham tends to prevail over a band structure according to Thomas-Fermi, which is responsible of the main features that define the many features of the clusters, some of which properties are used for determining the nature of surface 23 during the step 110 of prearranging the clusters.

[0173] Clusters 21 (FIG. 2) have a crystalline structure 19 that is typical of the chosen transition metals or alloy of transition metals. In FIGS. 4 to 6 crystal reticules with open faces are shown, which assist the process of adsorption of hydrogen, into a cluster 21, characterised by such structural arrangement. They comprise: [0174] face-centred cubic crystalline structure, fcc (110) (FIGS. 4); [0175] body-centred cubic crystalline structure, bcc (111) (FIG. 5); [0176] compact hexagonal structure, hcp (1010) (FIG. 6).

[0177] For example, Nickel can crystallize according to the face-centred cubic structure shown in the perspective view of FIG. 4, where six atoms 2 are shown arranged according to a diagonal plane.

[0178] More detail of the step 110 of depositing crystals of the transition metal in the form of clusters 110 on the substrate, is given in the block diagram of FIG. 7 and in the temperature profile of FIG. 8. In particular, true step 113 of depositing, preferably by means of sputtering, or spraying, or epitaxial deposition, can be preceded by a step 111 of loading a substrate into a preparation chamber. The deposited metal is then heated further up to a temperature close to the melting temperature T.sub.f (FIG. 8), in order to bring it to an incipient fusion, and then a slow cooling follows, step 118, in particular down to an average core temperature of about 600 C., after which a quick cooling 119 is carried out down to room temperature. This has the object of freezing the cluster structure that had been obtained at high temperature, which would otherwise evolve towards equilibrium structures, without stopping at a given cluster size, if the slow cooling 118 would be continued.

[0179] As depicted still in FIG. 1, the method comprises a subsequent start-up sequence, basically comprising subsequent step 114 of cleaning the substrate and the adsorbed metal, step 120 of bringing hydrogen into contact with the crystals of the transition metal in order to obtain a reaction core ready for performing the exothermal reaction, step 130 of heating the crystal up to above a critical temperature, and a step 140 of impulsively acting on the reaction core in order to trigger the exothermal reaction.

[0180] This sequence of steps 114, 120, 130, 140, which are described in detail below, is performed at least once. In another embodiment, the start-up sequence 114-140 is repeated until a successful triggering of the reaction core occurs caused by the step 140 of impulsively acting on the reaction core, as shown in FIG. 19.

[0181] Step 114 of cleaning the substrate, is preferably carried out by applying a vacuum degree to the substrate, preferably by repeatedly creating and removing a vacuum of at least 10.sup.9 bar at a temperature of at least 350 C. This step has the object of quantitatively removing any gas that is adsorbed on or adsorbed in the substrate, which would reduce drastically the adsorption of hydrogen 31 into clusters 21 even if a physical surface adsorption has been achieved.

[0182] The method provides then a treatment step 120 of the clusters with hydrogen 31, in which hydrogen 31 is brought into contact with surface 23 of the clusters 21, in order to obtain a population of molecules of hydrogen that is adsorbed on surface 23. A contribution to this process is given by a heating step 130 of surface 23 of the clusters up to a temperature T.sub.1 higher than a predetermined critical temperature T.sub.D, as shown in FIG. 9.

[0183] Clusters 21 with the adsorbed hydrogen form a reaction core that is available for exothermal reactions, which can be triggered by a step 140 of impulsively acting on the reaction core. More in detail, step 140 consists of supplying an impulse of energy 26 enabling Hydrogen to be adsorbed on/into the surface of clusters 23.

[0184] In order to achieve a result that is industrially acceptable, it is necessary to reach a temperature higher than the Debye temperature T.sub.D, for example the temperature T.sub.1 as shown in FIG. 9, which shows a typical temperature trend from step 130 of heating to step 170 of removing heat, during which a balance value is obtained of the temperature T.sub.eq at the reaction core 1. The triggering step is assisted by the presence of a thermal gradient T along the metal surface of the reaction core 1 as shown, for example, in FIG. 15.

[0185] Step 120 of feeding hydrogen is carried out in order to provide a relative pressure between 0,001 millibar and 10 bar, preferably between 1 millibar and 2 bar, to ensure an optimal number of hits of hydrogen molecules against surface 23, avoiding in particular surface desorption and other undesired phenomena caused by an excessive pressure. Moreover, the speed of the hydrogen molecules is lower than 3 m/s, and has a direction substantially parallel to surface 23, in order to obtain small angles of impact 39 that assist the adsorption and avoid back emission phenomena.

[0186] In FIG. 9, furthermore, the temperature is shown beyond which the reticular planes begins to slide with respect to one another, which is set between the temperatures corresponding to the absorption peaks and , above which the adsorption of hydrogen in clusters 21 is most likely.

[0187] FIG. 9 refers also relates the case in which, after the step of adsorption of hydrogen, that is effected at a temperature that is higher than critical temperature T.sub.D, a cooling step 119 of the reaction core is carried out down to room temperature. Step 140 of impulsively acting on the reaction core follows then heating step 130 starting from room temperature up to predetermined temperature T.sub.1, which is larger than Debye temperature T.sub.D of the transition metal, in a time t* that is as short as possible, preferably shorter than 5 minutes, in order not to affect the structure of the clusters and/or not to cause desorbing phenomena before step 140 of impulsively acting on the reaction core in order to start the exothermal reaction.

[0188] Critical temperature T.sub.D is normally set between 100 and 450 C., in particular between 200 and 450 C. hereafter the Debye temperature is indicated for some of the metals above indicated: Al 426K; Cd 186K; Cr 610K; Cu 344.5K;

[0189] Au 165K; a-Fe 464K; Pb 96K; a-Mn 476K; Pt 240K; Si 640K; Ag 225K; Ta 240K; Sn 195K; Ti 420K; W 405K; Zn 300K.

[0190] The start-up of the reaction is assisted by a gradient of temperature between two points of the reaction core, in particular set between 100 C. and 300 C., which has a trend like the example shown in FIG. 15.

[0191] In FIG. 10 an energy generator 50 is shown to carry out the invention, comprising a reaction core 1 housed in a generation chamber 53. The reaction core can be heated by an electric winding 56 that can be connected to a source of electromotive force, not shown. A cylindrical wall 55 separates generation chamber 53 from an annular chamber 54, which is defined by a cylindrical external wall 51 and have an inlet 64 and an outlet 65 for a heat exchange fluid, which is used for removing the heat that is developed during the exothermal reactions. The ends of central portion 51 are closed in a releasable way respectively by a portion 52 and a portion 59, which are adapted also for supporting the ends in an operative position.

[0192] Generator 50 also comprises a means 61, 62, 67 for impulsively acting on the reaction core, in order to trigger the exothermal reaction between Hydrogen and the transition metal, consisting of: [0193] a means for producing an impulsive electric current through an electrostrictive portion of the reaction core; [0194] a means for casting a laser impulse on the reaction core.

[0195] In FIGS. from 14 and 15 a different embodiment is shown of a reaction core having an extended surface, consisting of a tube bundle 86 where tubes 87 act as substrate for a layer 88 of transition metal that is deposited in the form of clusters at least on a surface portion of each tube 87.

[0196] The device of FIG. 11 has an elongated casing 10, which is associated with a means for making and maintaining vacuum conditions inside, not shown. In particular, the residual pressure during the step of cleaning the substrate is kept identical or less than 10.sup.9 absolute bar, for removing impurities, in particular gas that is not hydrogen. Furthermore, a means is provided, not shown in the figures, for moving substrate 3 within casing 10, in turn on at least three stations 11, 12 and 13. Station 11 is a chamber for preparation of the clusters where the surface of the substrate 3 is coated with a layer of a transition metal in the form of clusters by a process of sputtering. In chamber 11 a means is provided, not depicted, for bringing and maintaining the substrate at a temperature identical or higher than 350 C. In station 12 a cooling step 119 is carried out (FIGS. 9 and 10) of the deposited metal on the substrate, by feeding cold hydrogen and at a pressure preferably set between 1 millibar and 2 relative bar, so that they can be adsorbed on the metal. In station 13, instead, a controlling step is carried out of the crystalline structure, for example by computing a physical property, such as thermal conductivity, electric conductivity, or refraction index, in order to establish the nature of clusters of the crystals deposited on the substrate 3. Preferably, furthermore, a thickness control is carried out of the crystal layer and of the cluster surface density.

[0197] FIG. 12 represents diagrammatically a device 80 that comprises a single closed casing 90, in which a section for preparing a reaction core 1 of the type shown in FIG. 11 and a reactor 50 are enclosed, thus preserving the core from contamination, in particular from gas that is distinct from hydrogen during the time between the step of depositing the clusters and the step of triggering the reactions.

EXAMPLE

[0198] A plurality of cells containing reaction cores comprising micro/nanometric crystals in the form of cluster of Nickel, a transition metal, and Hydrogen absorbed therein was prepared according to the invention, i.e. according to steps 110-130 described above.

[0199] FIGS. 16a/b, 17a/b and 18a/b relates to three start-up events of three distinct reaction cores, caused by a step 140 of impulsively acting ion the reaction cores. As it can be seen from FIGS. 16a, 17a, 18a, the impulsive action was a pressure impulse made by suddenly adding or removing Hydrogen from the cell. In these figures, a sudden pressure change marks the event giving rise to cell (core) activation. In coincidence with this event, a strong temperature increase occurs, in spite of the contemporaneous decrease of power (W) supplied to the cell from outside. This means that a heat generating process starts after the activation event, i.e. that an excess enthalpy is involved by the process. After an initial rise, a stationary temperature value is reached, due to the temperature regulation system.

[0200] The foregoing description of a specific embodiment will so fully reveal the invention according to the conceptual point of view, so that others, by applying current knowledge, will be able to modify and/or adapt for various applications such an embodiment without further research and without parting from the invention, and it is therefore to be understood that such adaptations and modifications will have to be considered as equivalent to the specific embodiment. The means and the materials to realise the different functions described herein could have a different nature without, for this reason, departing from the field of the invention. It is to be understood that the phraseology or terminology employed herein is for the purpose of description and not of limitation.