Magnetoresistance effect element and magnetic memory

Abstract

Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

Claims

1. A magnetoresistive element comprising: a first non-magnetic layer containing oxygen; a ferromagnetic layer having a bcc structure and containing Fe and B, disposed over the first non-magnetic layer, with an interfacial perpendicular magnetic anisotropy at an interface therebetween that results in a magnetization direction of the ferromagnetic layer oriented perpendicularly to the film plane so that the magnetoresistive element has a magnetoresistance ratio (MR) equal to or greater than 70%; and a second non-magnetic layer disposed over the ferromagnetic layer, the second non-magnetic layer containing a material with a spin-orbit interaction smaller than that of Pt.

2. The magnetoresistive element according to claim 1, the second non-magnetic layer contains any one of Ta, Cu and Mg.

3. The magnetoresistive element according to claim 1, wherein the first non-magnetic layer contains MgO.

4. The magnetoresistive element according to claim 1, wherein the ferromagnetic layer contains Co.

5. The magnetoresistive element according to claim 1, wherein the magnetization direction of the ferromagnetic layer is perpendicular to the film plane resulting from a layer thickness of the ferromagnetic layer being smaller than a predetermined thickness.

6. The magnetoresistive element according to claim 1, wherein the MR ratio of the magnetoresistive element is equal to or greater than 100%.

7. The magnetoresistive element according to claim 1, wherein the second non-magnetic layer consists essentially of an oxide-free material.

8. A method for producing a magnetoresistive element, comprising: forming a first non-magnetic layer containing oxygen; forming a ferromagnetic layer having a bcc structure and containing Fe and B, over the first non-magnetic layer with an interfacial perpendicular magnetic anisotropy at an interface therebetween that results in a magnetization direction of the ferromagnetic layer oriented perpendicularly to the film plane so that the magnetoresistive element has a magnetoresistance ratio (MR) equal to or greater than 70%; and forming a second non-magnetic layer over the ferromagnetic layer, the second non-magnetic layer containing a material with a spin-orbit interaction smaller than that of Pt.

9. The method for producing a magnetoresistive element according to claim 8, wherein the second non-magnetic layer contains any one of Ta, Cu and Mg.

10. The method for producing a magnetoresistive element according to claim 8, wherein the first non-magnetic layer contains MgO.

11. The method for producing a magnetoresistive element according to claim 8, wherein the ferromagnetic layer contains Co.

12. The method for producing a magnetoresistive element according to claim 8, wherein said forming a ferromagnetic layer includes causing the magnetization direction of the ferromagnetic layer to be perpendicular to the film plane by controlling a layer thickness of the ferromagnetic layer to be smaller than a predetermined thickness.

13. The method for producing a magnetoresistive element according to claim 8, wherein the second non-magnetic layer contains any one of Ta, Cu and Mg.

14. The method for producing a magnetoresistive element according to claim 8, wherein the first non-magnetic layer contains MgO.

15. The method for producing a magnetoresistive element according to claim 8, wherein the ferromagnetic layer contains Co.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic diagram of a basic structure of a memory cell of a magnetic memory.

(2) FIG. 2 shows changes in the film thickness necessary for the magnetization direction of a magneto resistive effect element to become perpendicular to the film plane, versus the temperature in an annealing step in a case where CoFeB is used for a first ferromagnetic layer and a second ferromagnetic layer.

(3) FIG. 3 shows a change in the magnetoresistance ratio of the magneto resistive effect element versus the temperature in the annealing step in the case where CoFeB is used for the first ferromagnetic layer and the second ferromagnetic layer.

(4) FIG. 4 shows a resistance change in the magneto resistive effect element versus magnetic field application in a perpendicular direction to the film plane in the case where CoFeB is used for the first ferromagnetic layer and the second ferromagnetic layer.

(5) FIG. 5 is a schematic cross sectional view of an example of the magneto resistive effect element according to the present invention.

(6) FIG. 6A shows a CoFeB film thickness dependency of the damping factor of ferromagnet CoFeB.

(7) FIG. 6B shows a CoFeB film thickness dependency of K.sub.eff.Math.t.

(8) FIG. 7 shows the probability of magnetization reversal in a recording layer and a pinned layer of the magneto resistive effect element according to the present invention.

(9) FIG. 8 is a schematic cross sectional view of an example of the magneto resistive effect element according to the present invention.

(10) FIG. 9 is a schematic cross sectional view of an example of the magneto resistive effect element according to the present invention.

(11) FIG. 10 is a conceptual diagram of an example of a magnetic memory according to the present invention.

MODE FOR CARRYING OUT THE INVENTION

(12) In the following, a magnetic memory and a magneto resistive effect element to which the present invention is applied will be described in detail with reference to the drawings.

First Embodiment

(13) FIG. 5 schematically shows a structure of a magneto resistive effect element according to the first embodiment. The magneto resistive effect element 101 is provided with a first ferromagnetic layer 106 with a fixed magnetization direction; a second ferromagnetic layer 107 with a variable magnetization direction; and a non-magnetic layer 108 electrically connected between the first ferromagnetic layer and the second ferromagnetic layer. The material of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 is Co.sub.20Fe.sub.60B.sub.20, while the non-magnetic layer 108 is formed from MgO with a thickness of 1 nm. The first ferromagnetic layer 106 has a film thickness of 1.0 nm, and the second ferromagnetic layer has a film thickness of 1.2 nm. For an underlayer 503 and a capping layer 504, Ta with a thickness of 5 nm is used. A layered thin film with the configuration of FIG. 5 is made by sputtering in ultrahigh vacuum, and is thereafter annealed at 300 C. for crystallization of the first ferromagnetic layer, the second ferromagnetic layer, and the non-magnetic layer.

(14) With reference to FIG. 2, the magnetic easy axis of the CoFeB layers of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 can be made perpendicular to the film plane by controlling the film thickness of the layers to be on the order of 1.0 nm to 1.6 nm when the annealing temperature is 300 C. According to the present embodiment, the first ferromagnetic layer 106 has a film thickness of 1.0 nm and the second ferromagnetic layer 107 has a film thickness of 1.2 nm. By applying these film thicknesses, magnetization 501 of the first ferromagnetic layer and magnetization 502 of the second ferromagnetic layer are oriented in a perpendicular direction, as shown in FIG. 5. By providing the film thickness difference between the first ferromagnetic layer 106 and the second ferromagnetic layer 107, the ease of magnetization reversal of the pinned layer and the recording layer can be controlled.

(15) The relationship between the film thickness of CoFeB and the ease of magnetization reversal of the recording layer and the pinned layer (i.e., the difference in current density J.sub.c0 required for magnetization reversal) will be described in greater detail. The current density J.sub.c0 required for magnetization reversal of the magnetic layers can be expressed by the following expression.
J.sub.c0.Math.K.sub.eff.Math.t(1)

(16) where is the Gilbert damping factor, t is the film thickness of the magnetic layers, and K.sub.eff is the perpendicular magnetic anisotropy energy density of the magnetic layers.

(17) The values of and K.sub.eff vary depending on the film thickness of Co.sub.20Fe.sub.60B.sub.20. FIGS. 6A and 6B show the Co.sub.20Fe.sub.60B.sub.20 film thickness dependency of and K.sub.eff.Math.t (product of K.sub.eff and t). As shown in FIGS. 6A and 6B, and K.sub.eff.Math.t increase as the Co.sub.20Fe.sub.60B.sub.20 film thickness is decreased. From these characteristics and expression (1), it can be seen that the write current density J.sub.c0 increases as the Co.sub.20Fe.sub.60B.sub.20 film thickness is decreased. For the above reasons, in the configuration of the first embodiment, magnetization reversal is difficult to occur in the pinned layer (1.0 nm) compared with the recording layer (1.2 nm), so that the magnetization direction of the pinned layer can be stably retained when a current is caused to flow for rewriting information in the recording layer.

(18) FIG. 7 shows the results of calculation of the probability of magnetization reversal of the recording layer and the pinned layer in the element according to the present embodiment. As shown, when the applied voltage is positive, a current flows through the magneto resistive effect element from bottom (pinned layer 106) to top (recording layer 107). When the voltage is applied in the positive direction and more than a certain current flows through the element, the magnetization of the recording layer 107 is reversed (change at A in the figure). At this time, the magnetization direction of the pinned layer 106 is still retained. As the positive voltage is further increased and the current flows, the magnetization of the pinned layer 106 is also eventually reversed (change at B in the figure); however, the voltage (current) required for magnetization reversal of the pinned layer 106 is significantly greater than the value required for the reversal of the recording layer 107. On the other hand, when a negative voltage is applied, a current flows from top (recording layer 107) to bottom (pinned layer 106) of the element. In this case, too, the voltage (current) required for the magnetization reversal of the pinned layer 106 (change at D in the figure) is significantly greater than the value for the magnetization reversal of the recording layer 107 (change at C in the figure), as in the case of the application of positive voltage. Thus, as described above, according to the present embodiment, the ease of magnetization reversal is controlled by providing a film thickness difference between the recording layer and the pinned layer, whereby an operation can be implemented in which the magnetization direction of the pinned layer can be stably retained at the time of rewriting information of the recording layer (magnetization reversal).

(19) Preparation and evaluation of the element with the configuration of the first embodiment has shown a resistance change due to magnetization reversal in perpendicular direction and a MR ratio of 100% or higher. It has also been confirmed that the magnetization of the pinned layer can be stably retained at the time of rewriting of the recording layer, in agreement with the calculation results shown in FIG. 7.

(20) According to the present embodiment, the first ferromagnetic layer 106 is used as the pinned layer while the second ferromagnetic layer 107 is used as the recording layer. However, the top-bottom positions of the layers may be switched such that the film thickness of the ferromagnetic layer disposed over the non-magnetic layer 108 is decreased compared with the ferromagnetic layer disposed under the non-magnetic layer 108. In this case, the ferromagnetic layer disposed over the non-magnetic layer 108 is the pinned layer.

(21) While according to the present embodiment CoFeB is used as the material of the first ferromagnetic layer 106 and the second ferromagnetic layer 107, other materials may be used. For example, a material containing at least one type of 3d transition metal element, such as CoFe and Fe, is used. Further, a Heusler alloy represented by Co.sub.2MnSi, Co.sub.2FeAl, Co.sub.2CrAl, and the like may be used. Heusler alloys are a half metal material and therefore have high spin polarizability, so that the MR ratio can be further increased. In addition, Heusler alloys have a small damping factor compared with conventional ferromagnets. The materials that have been considered as perpendicular magnetization material generally have a large damping factor, such as on the order of 0.1 for a Co/Pt multilayer film. In comparison, CoFeB used in the present embodiment has a low damping factor of not more than 0.03 (depending on film thickness). A Heusler alloy, such as Co.sub.2FeMnSi, has an even lower damping factor of less than 0.01. Thus, by applying a Heusler alloy with the small damping factor in the recording layer, the write current density J.sub.c0 can be further decreased.

(22) While according to the present embodiment MgO is used as the material of the non-magnetic layer 108, other materials may be used. For example, an oxygen-containing compound such as Al.sub.2O.sub.3 and SiO.sub.2, a semiconductor such as ZnO, or a metal such as Cu is used. When an amorphous insulator of Al.sub.2O.sub.3, SiO.sub.2, and the like is used as the barrier layer, the MR ratio may be decreased compared with the case where MgO is used. However, because of the effect of making the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 perpendicular, the function as a magneto resistive effect element with perpendicular magnetization can be provided. When a metal such as Cu is used for the non-magnetic layer 108, an oxygen-containing compound may be used for the underlayer 503 and the capping layer 504 so as to cause the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 to be perpendicular.

Second Embodiment

(23) The second embodiment proposes a magneto resistive effect element in which layers of different crystalline structures are applied in the pinned layer and the recording layer.

(24) The magneto resistive effect element according to the second embodiment is similar to the first embodiment shown in FIG. 5 in basic structure and the film thickness of the various layers. For the non-magnetic layer 108, MgO (film thickness: 1 nm) is used, while Ta (film thickness: 5 nm) is used for the underlayer 503 and the capping layer 504. The second embodiment differs from the first embodiment in that crystallized Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1 nm) is used for the first ferromagnetic layer 106 as the pinned layer while Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1.2 nm) in amorphous state is used for the second ferromagnetic layer 107 as the recording layer. The magnetic anisotropy energy K.sub.eff is greater in crystalline state than in amorphous state. As described with reference to the first embodiment, the write current density J.sub.c0 required for magnetization reversal of the magnetic layer depends on K.sub.eff. Thus, in the above configuration, magnetization reversal is difficult to occur in the pinned layer compared with the recording layer. Accordingly, an operation can be implemented in which the magnetization direction of the pinned layer can be stably retained at the time of a writing operation for the recording layer.

(25) A method for making a layered film for the element according to the second embodiment will be described with reference to FIG. 5. The underlayer 503, the first ferromagnetic layer 106, and the non-magnetic layer 108 are layered by sputtering at ultrahigh vacuum and room temperature, followed by annealing the laminated layers at 350 C. At this time, Co.sub.20Fe.sub.60B.sub.20 of the first ferromagnetic layer 106 is in amorphous state at the time of film formation at room temperature but is crystallized by the subsequent annealing. Thereafter, the temperature is brought back to room temperature, and the second magnetic layer 107 and the capping layer 504 are layered. By this method, the layered film with a structure such that the second ferromagnetic layer 107 is in amorphous state and the first ferromagnetic layer 106 is crystallized can be realized. Although CoFeB is in amorphous state, the magnetization direction can be made perpendicular by controlling the film thickness.

(26) Preferably, in order to obtain a higher MR ratio in the element made by the above method, annealing is performed at temperature of approximately 200 C. after the layered film is made. In this way, crystallization proceeds only at the interface with the non-magnetic layer 108 while the second ferromagnetic layer 107 is generally in amorphous state, whereby an increase in MR ratio can be achieved.

(27) Preparation and evaluation of the element according to the second embodiment have shown a resistance change due to magnetization reversal in perpendicular direction and a MR ratio of not less than 100%. It has also been confirmed that the magnetization of the pinned layer can be stably retained at the time of rewriting of the recording layer.

(28) In another method, CoFe as crystalline material may be used for the ferromagnetic layer for the pinned layer, while amorphous CoFeB may be used for the ferromagnetic layer for the recording layer.

(29) While according to the present embodiment MgO is used as the material of the non-magnetic layer 108, other materials may be used. For example, an oxygen-containing compound such as Al.sub.2O.sub.3 and SiO.sub.2, a semiconductor such as ZnO, or a metal such as Cu is used. When an amorphous insulator of Al.sub.2O.sub.3, SiO.sub.2, and the like is used as the barrier layer, the MR ratio may be decreased compared with the case where MgO is used. However, because of the effect of causing the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 to be perpendicular, the function as a magneto resistive effect element with perpendicular magnetization can be provided. When a metal such as Cu is used in the non-magnetic layer 108, an oxygen-containing compound may be used in the underlayer 503 and the capping layer 504 so as to cause the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 to be perpendicular.

(30) While in the foregoing embodiment a film thickness difference is provided between the first ferromagnetic layer 106 and the second ferromagnetic layer 107, the two layers may have the same film thickness and yet the operation as a magneto resistive effect element with perpendicular magnetization can be provided. In this case, too, because of the difference in crystalline structure between the first ferromagnetic layer 106 and the second ferromagnetic layer 107, there is a difference in perpendicular magnetic anisotropy between the layers. Thus, magnetization reversal is more difficult to occur in the first ferromagnetic layer 106 as the pinned layer than in the second ferromagnetic layer 107 as the recording layer. Accordingly, although the magnetization stability of the pinned layer may be decreased compared with the configuration according to the foregoing embodiment, the magnetization direction of the pinned layer can be fixed at the time of rewriting the recording layer.

Third Embodiment

(31) The third embodiment proposes a magneto resistive effect element such that the magnetization of the pinned layer is stabilized by a non-magnetic layer adjoining the pinned layer.

(32) The magneto resistive effect element according to the third embodiment is similar to the first embodiment shown in FIG. 5 in basic structure and the film thickness of the various layers. For the first ferromagnetic layer 106, Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1 nm) is used; for the second ferromagnetic layer 107, Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1.2 nm) is used; and for the non-magnetic layer 108, MgO (film thickness: 1 nm) is used. The third embodiment differs from the first embodiment in that Pt (film thickness: 5 nm) is used for the underlayer 503, and Ta (film thickness: 5 nm) is used for the capping layer 504. After the layered film is made, annealing is performed at 300 C.

(33) When a material with strong spin-orbit interaction, such as Pt as used for the underlayer 503 according to the third embodiment, is connected to a magnetic layer, the damping factor of the magnetic layer increases. As described with reference to expression (1) in the first embodiment, as increases, the write current density J.sub.c0 is increased. On the other hand, in the capping layer 504 connected on the recording layer side, it is preferable to use a non-magnetic material with weak spin-orbit interaction such that the damping factor of the adjacent magnetic layer is decreased, such as Ta used in the present embodiment, Cu, or Mg. By such combinations, the J.sub.c0 of the pinned layer with a large is increased compared with the recording layer with small . As a result, an erroneous operation in which the magnetization of the pinned layer is erroneously reversed by the current that flows at the time of rewriting information in the recording layer can be prevented, and a stable operation can be implemented.

(34) Preparation and evaluation of the element with the configuration of the third embodiment has shown a resistance change due to magnetization reversal in perpendicular direction and a MR ratio of not less than 100%. It has also been confirmed that the magnetization of the pinned layer can be stably retained at the time of rewriting the recording layer.

(35) While according to the present embodiment the first ferromagnetic layer 106 is used as the pinned layer and the second ferromagnetic layer 107 is used as the recording layer, the top-bottom positions of the layers may be switched such that the film thickness of the ferromagnetic layer disposed over the non-magnetic layer 108 is decreased compared with the film thickness of the ferromagnetic layer disposed under the first non-magnetic layer 108. Thus, the ferromagnetic layer disposed over the non-magnetic layer 108 provides the pinned layer. In this case, Pt may be used for the non-magnetic layer (capping layer 504) adjoining the ferromagnetic layer disposed over the non-magnetic layer 108, while Ta may be used for the non-magnetic layer (underlayer 503) adjoining the ferromagnetic layer disposed under the non-magnetic layer 108.

(36) While according to the present embodiment CoFeB is used as the material of the first ferromagnetic layer 106 and the second ferromagnetic layer 107, other materials may be used. For example, a material containing at least one type of 3d transition metal element, such as CoFe or Fe, is used. Further, a Heusler alloy represented by Co.sub.2MnSi, Co.sub.2FeAl, Co.sub.2CrAl, and the like may be used. Heusler alloys are a half metal material and therefore have a high spin polarizability such that the MR ratio can be further increased. Heusler alloys have a small damping factor compared with conventional ferromagnets. The materials that have been considered as a perpendicular magnetization material generally have a large damping factor, such as on the order of 0.1 for a Co/Pt multilayer film. In comparison, CoFeB used in the present embodiment has a low damping factor of not more than 0.03 (depending on film thickness). A Heusler alloy, such as Co.sub.2FeMnSi, has an even lower damping factor of less than 0.01. Thus, by utilizing a Heusler alloy with the small damping factor in the recording layer, the write current density J.sub.c0 can be further decreased.

(37) While according to the present embodiment Pt is used for the non-magnetic layer 503 (underlayer) adjoining the first ferromagnetic layer 106, i.e., the pinned layer, other materials with strong spin-orbit interaction, such as Pd, may be used.

(38) Further, while according to the present embodiment MgO is used as the material of the non-magnetic layer 108, other materials may be used. For example, an oxygen-containing compound such as Al.sub.2O.sub.3 and SiO.sub.2, or a semiconductor such as ZnO, may be used. When an amorphous insulator of Al.sub.2O.sub.3, SiO.sub.2, and the like is used as the barrier layer, the MR ratio may be decreased compared with the case where MgO is used. However, because of the effect of making the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 perpendicular, the function as a magneto resistive effect element with perpendicular magnetization can be provided.

(39) Further, while according to the foregoing embodiment the film thickness difference is provided between the first ferromagnetic layer 106 and the second ferromagnetic layer 107, the layers may have the same film thickness and yet the operation as a magneto resistive effect element with perpendicular magnetization can be provided. In this case, too, because of the effect of the underlayer 503 and the capping layer 504, the damping factors of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 are varied such that magnetization reversal is difficult to occur in the first ferromagnetic layer 106 providing the pinned layer compared with the second ferromagnetic layer 107 providing the recording layer. Thus, although the stability of magnetization of the pinned layer may be decreased compared with the foregoing embodiment, the magnetization direction of the pinned layer can be fixed at the time of rewriting of the recording layer.

Fourth Embodiment

(40) The fourth embodiment proposes a magneto resistive effect element such that the magnetization of the pinned layer is stabilized by a non-magnetic layer adjoining the pinned layer, as in the third embodiment.

(41) The magneto resistive effect element according to the fourth embodiment is similar to the first embodiment shown in FIG. 5 in basic structure and the film thickness of the various layers. For the first ferromagnetic layer 106, Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1 nm) is used; for the second ferromagnetic layer 107, Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1.2 nm) is used; and for the non-magnetic layer 108, MgO (film thickness: 1 nm) is used. The fourth embodiment differs from the first embodiment in that MgO (film thickness: 1 nm) is used for the underlayer 503, and Ta (film thickness: 5 nm) is used for the capping layer 504. After the layered film according to the fourth embodiment is made, annealing is performed at 300 C.

(42) As described with reference to the first embodiment, the magnetization of CoFeB of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 is oriented in a perpendicular direction by a change in anisotropy at the interface between MgO of the non-magnetic layer 108 and the adjoining layers. This effect is particularly exhibited when an oxygen-containing compound, such as MgO, is adjacent. According to the fourth embodiment, the underlayer 503 of MgO is connected to the first ferromagnetic layer 106 as the pinned layer. In this way, the magnetization of the pinned layer is more stabilized in the perpendicular direction; namely, K.sub.eff of expression (1) is increased. As a result, as will be seen from expression (1), the current density J.sub.c0 required for magnetization reversal is increased. Because of this effect, the magnetization of the pinned layer is stably retained even when a current is caused to flow through the element for rewriting information in the recording layer.

(43) Preparation and evaluation of the element according to the fourth embodiment has shown a resistance change due to magnetization reversal in perpendicular direction and a MR ratio of not less than 100%. It has also been confirmed that the magnetization of the pinned layer can be stably retained at the time of rewriting the recording layer.

(44) While according to the present embodiment the first ferromagnetic layer 106 is used as the pinned layer and the second ferromagnetic layer 107 is used as the recording layer, the top-bottom positions of the layers may be switched such that the film thickness of the ferromagnetic layer disposed over the non-magnetic layer 108 is decreased compared with the ferromagnetic layer disposed under the non-magnetic layer 108. In this case, the ferromagnetic layer disposed over the non-magnetic layer 108 is the pinned layer. Further, in this case, MgO is used for the non-magnetic layer (capping layer 504) adjoining the ferromagnetic layer disposed over the non-magnetic layer 108, while Ta is used for the non-magnetic layer (underlayer 503) adjoining the ferromagnetic layer disposed under the non-magnetic layer 108.

(45) While in the present embodiment CoFeB is used as the material of the first ferromagnetic layer 106 and the second ferromagnetic layer 107, other materials may be used. For example, a material containing at least one type of 3d transition metal element, such as CoFe or Fe, is used. Further, a Heusler alloy represented by Co.sub.2MnSi, Co.sub.2FeAl, Co.sub.2CrAl, and the like may be used. Heusler alloys are a half metal material and therefore have high spin polarizability such that the MR ratio can be further increased. Heusler alloys have a small damping factor compared with conventional ferromagnets. The materials that have been considered as a perpendicular magnetization material generally have a high damping factor, such as on the order of 0.1 for a Co/Pt multilayer film. In comparison, CoFeB used in the present embodiment has a low damping factor of not more than 0.03 (depending on film thickness). However, a Heusler alloy, such as Co.sub.2FeMnSi, has an even lower damping factor of less than 0.01. Thus, by applying a Heusler alloy with the small damping factor in the recording layer, the write current density J.sub.c0 can be further decreased.

(46) While according to the present embodiment MgO is used for the non-magnetic layer (underlayer 503) adjacent the first ferromagnetic layer 106, i.e., the pinned layer, other compounds containing oxygen, such as Al.sub.2O.sub.3 or SiO.sub.2, may be used.

(47) While according to the present embodiment MgO is used as the material of the non-magnetic layer 108, other materials may be used. For example, an oxygen-containing compound such as Al.sub.2O.sub.3 or SiO.sub.2, or a semiconductor such as ZnO, is used. When an amorphous insulator of Al.sub.2O.sub.3, SiO.sub.2, and the like is used as the barrier layer, the MR ratio may be decreased compared with the case where MgO is used. However, because of the effect of making the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 perpendicular, the function as a magneto resistive effect element with perpendicular magnetization can be provided.

(48) Further, while according to the present embodiment a film thickness difference is provided between the first ferromagnetic layer 106 and the second ferromagnetic layer 107, the layers may have the same film thickness and yet the operation as a magneto resistive effect element of perpendicular magnetization can be provided. In this case, too, because of the effect of the underlayer 503 and the capping layer 504, the damping factors of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 are varied such that magnetization reversal is difficult to occur in the first ferromagnetic layer 106 providing the pinned layer compared with the second ferromagnetic layer 107 providing the recording layer. Thus, while the stability of the magnetization of the pinned layer may be decreased compared with the configuration of the foregoing embodiment, the magnetization direction of the pinned layer can be fixed at the time of rewriting the recording layer.

Fifth Embodiment

(49) The fifth embodiment proposes an element with a structure such that a material of the same material type but with different composition ratios is applied in the pinned layer and the recording layer.

(50) The magneto resistive effect element according to the fifth embodiment is similar to the first embodiment shown in FIG. 5 in basic structure and the film thickness of the various layers. However, according to the fifth embodiment, a material with different compositions is used for the respective magnetic layers; specifically, Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1 nm) is used for the first ferromagnetic layer 106 while Co.sub.40Fe.sub.40B.sub.20 (film thickness: 1.2 nm) is used for the second ferromagnetic layer 107. The perpendicular magnetic anisotropy energy density K.sub.eff is higher in Co.sub.20Fe.sub.60B.sub.20 with a higher Fe composition ratio than in Co.sub.40Fe.sub.40B.sub.20. Because the write current density J.sub.c0 required for magnetization reversal of the magnetic layer depends on K.sub.eff, magnetization reversal is difficult to occur in the pinned layer compared with the recording layer according to the above configuration. Thus, the magnetization direction of the pinned layer is stably retained at the time of a write operation for the recording layer, so that a highly reliable operation can be implemented.

(51) Preparation and evaluation of the element according to the fifth embodiment has shown a resistance change by magnetization reversal in perpendicular direction and a MR ratio of not less than 100%. It has also been confirmed that the magnetization of the pinned layer can be stably retained at the time of rewriting the recording layer.

(52) While according to the present embodiment CoFeB is used as the material of the first ferromagnetic layer 106 and the second ferromagnetic layer 107, other materials may be used. For example, a material containing at least one type of 3d transition metal element, such as CoFe or Fe, is used. Obviously, effects similar to those of the present embodiment can be obtained by applying crystallized Co.sub.40Fe.sub.40B.sub.20 for the first ferromagnetic layer 106 providing the pinned layer and Co.sub.20Fe.sub.60B.sub.20 in amorphous state for the second ferromagnetic layer 107 providing the recording layer, as in the second embodiment.

(53) While according to the present embodiment Ta is used for the underlayer 503, in order to stabilize the magnetization of the pinned layer more, it may be effective to use a metal with large spin-orbit interaction, such as Pt or Pd, or an oxygen-containing compound, such as MgO, as in the third embodiment or the fourth embodiment.

(54) While according to the present embodiment MgO is used as the material of the non-magnetic layer 108, other materials may be used. For example, an oxygen-containing compound such as Al.sub.2O.sub.3 or SiO.sub.2, or a semiconductor such as ZnO is used. When an amorphous insulator of Al.sub.2O.sub.3, SiO.sub.2, and the like is used as the barrier layer, the MR ratio may be decreased compared with the case where MgO is used; however, because of the effect of making the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 perpendicular, the function as a magneto resistive effect element with perpendicular magnetization can be provided.

Sixth Embodiment

(55) The sixth embodiment proposes a magneto resistive effect element such that the magnetization of the pinned layer is more stabilized by connecting an antiferromagnet layer to the pinned layer.

(56) FIG. 8 schematically shows a cross section of a layered film of the element according to the sixth embodiment. The element according to the sixth embodiment is similar to the first embodiment shown in FIG. 5 in basic structure and the film thickness of the various layers. For the first ferromagnetic layer 106, Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1 nm) is used; for the second ferromagnetic layer 107, Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1.2 nm) is used; for the non-magnetic layer 108, MgO (film thickness: 1 nm) is used; and for the capping layer 504, Ta (film thickness: 5 nm) is used. The sixth embodiment differs from the first embodiment in that NiFe (film thickness: 3 nm) is used for the underlayer 503, and an antiferromagnetic layer 1301 of MnIr (film thickness: 8 nm) is layered on the underlayer 503. After the layered film is made, annealing is performed at 300 C.

(57) By using the antiferromagnetic layer 1301 as an underlayer for the first ferromagnetic layer 106 providing the pinned layer, the magnetization of the pinned layer can be more stabilized. Thus, the erroneous operation in which the magnetization of the pinned layer is reversed by current that flows at the time of writing information in the recording layer can be suppressed.

(58) Preparation and evaluation of the element according to the sixth embodiment has shown a resistance change by magnetization reversal in perpendicular direction and a MR ratio of not less than 100%. It has also been confirmed that the magnetization of the pinned layer can be stably retained at the time of rewriting the recording layer.

(59) While according to the present embodiment CoFeB is used as the material of the first ferromagnetic layer 106 and the second ferromagnetic layer 107, other materials may be used. For example, a material containing at least one type of 3d transition metal element, such as CoFe or Fe, may be used. Further, amorphous CoFeB may be used for the second ferromagnetic layer 107 forming the recording layer, as in the second embodiment. A Heusler alloy represented by Co.sub.2MnSi, Co.sub.2FeAl, Co.sub.2CrAl, or the like may also be used. Heusler alloys are a half metal material and therefore have high spin polarizability such that the MR ratio can be further increased. Heusler alloys have small damping factor compared with conventional ferromagnets. The materials that have been considered as a perpendicular magnetization material generally have a large damping factor, such as on the order of 0.1 for a Co/Pt multilayer film. In comparison, CoFeB used in the present embodiment has a low damping factor of not more than 0.03 (depending on film thickness). A Heusler alloy, such as Co.sub.2FeMnSi, has an even lower damping factor of less than 0.01. Thus, by applying a Heusler alloy with the small damping factor in the recording layer, the write current density J.sub.c0 can be further decreased.

(60) While in the present embodiment MgO is used as the material of the non-magnetic layer 108, other materials may be used. For example, an oxygen-containing compound such as Al.sub.2O.sub.3 or SiO.sub.2, or a semiconductor such as ZnO, is used. When an amorphous insulator of Al.sub.2O.sub.3 or SiO.sub.2 is used as the barrier layer, the MR ratio may be decreased compared with the case where MgO is used; however, because of the effect of making the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 perpendicular, the function as a magneto resistive effect element with perpendicular magnetization can be provided.

Seventh Embodiment

(61) The seventh embodiment proposes a magneto resistive effect element in which the magnetization of the pinned layer is more stabilized by applying a pinned layer with a structure such that ferromagnetic layers and non-magnetic layers are alternately layered.

(62) FIG. 9 schematically shows a cross section of a layered film of the element according to the seventh embodiment. In the seventh embodiment, a pinned layer 1001 has a layered structure of non-magnetic layer 1005/ferromagnetic layer 1004/non-magnetic layer 1003/ferromagnetic layer 1002. For the non-magnetic layer 1003 and the non-magnetic layer 1005, MgO (film thickness: 0.4 nm) is used. For the ferromagnetic layer 1002 and the ferromagnetic layer 1004, Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1 nm) is used. By adopting this layered structure, the number of interfaces between ferromagnetic layers and non-magnetic layers is increased, so that the interfacial effect for causing the magnetization direction of the pinned layer 1001 to be perpendicular is increased. Further, the total volume of the ferromagnetic layer portion of the pinned layer 1001 is increased, so that the magnetization direction is more stabilized in the perpendicular direction with respect to the film plane. As a result, the erroneous operation in which the magnetization of the pinned layer is reversed by the current that flows at the time of writing of information in the recording layer can be more suppressed. According to the seventh embodiment, MgO (film thickness: 1 nm) is used for the non-magnetic layer 108; Ta (film thickness: 5 nm) is used for the underlayer 503 and the capping layer 504; and Co.sub.20Fe.sub.60B.sub.20 (film thickness: 1.2 nm) is used for the ferromagnetic layer 107 providing the recording layer.

(63) Preparation and evaluation of the element according to the seventh embodiment has shown a resistance change by magnetization reversal in perpendicular direction and a MR ratio of not less than 100%. It has also been confirmed that the magnetization of the pinned layer can be stably retained at the time of rewriting the recording layer.

(64) In order to stabilize the magnetization of the pinned layer, the number of the layers in the layered structure of the pinned layer may be increased. While according to the present embodiment MgO is used for the non-magnetic layer 1003 inserted between the ferromagnetic layer 1002 and the ferromagnetic layer 1004 of the pinned layer 1001, other materials may be used. For example, a material containing oxygen, such as Al.sub.2O.sub.3 or SiO.sub.2, is used. Further, a metal such as Ru, Rh, V, Ir, Os, or Re may be used. In this case, due to the exchange coupling between the magnetizations of the ferromagnetic layer 1002 and the ferromagnetic layer 1004, the magnetization directions of the ferromagnetic layer 1002 and the ferromagnetic layer 1004 can be easily changed to parallel or anti-parallel by controlling the film thickness of the non-magnetic layer 1003.

(65) Further, while according to the present embodiment CoFeB is used for the multiple ferromagnetic layers of the layered-structure pinned layer and the second ferromagnetic layer 107, other materials may be used. For example, a material containing at least one type of 3d transition metal element, such as CoFe or Fe, may be used. Further, a Heusler alloy represented by Co.sub.2MnSi, Co.sub.2FeAl, Co.sub.2CrAl, or the like may be used. Heusler alloys are a half metal material and therefore have high spin polarizability such that the MR ratio can be further increased. Heusler alloys have small damping factor compared with conventional ferromagnets. The materials that have been considered as a perpendicular magnetization material generally have a large damping factor, such as on the order of 0.1 for a Co/Pt multilayer film. In comparison, CoFeB used in the present embodiment has a low damping factor of not more than 0.03 (depending on film thickness). However, a Heusler alloy, such as Co.sub.2FeMnSi, has an even lower damping factor of less than 0.01. Thus, by applying a Heusler alloy with the small damping factor in the recording layer, the write current density J.sub.c0 can be further decreased.

(66) While according to the present embodiment MgO is used as the material of the non-magnetic layer 108, other materials may be used. For example, an oxygen-containing compound such as Al.sub.2O.sub.3 or SiO.sub.2, or a semiconductor such as ZnO is used. When an amorphous insulator of Al.sub.2O.sub.3 or SiO.sub.2 is used as the barrier layer, the MR ratio may be decreased compared with the case where MgO is used; however, because of the effect of causing the magnetization of the first ferromagnetic layer 106 and the second ferromagnetic layer 107 to be perpendicular, the function as a magneto resistive effect element with perpendicular magnetization can be provided.

Eighth Embodiment

(67) According to another aspect of the present invention, a MRAM can be realized by adopting the magneto resistive effect element according to the first through the seventh embodiments as a recording element.

(68) As shown in FIG. 10, the MRAM according to the present invention is provided with a plurality of bit lines 104 disposed in parallel with each other; a plurality of source lines 103 disposed in parallel with the bit lines 104 and with each other; and a plurality of word lines 105 disposed perpendicular to the bit lines 104 and parallel with each other. At points of intersection of the bit lines 104 and the word lines 105, the memory cells 100 are disposed. The memory cells 100 are provided with the magneto resistive effect elements 101 according to the first through the seventh embodiments, and the select transistors 102. The multiple memory cells 100 constitute a memory array 1401. The bit lines 104 are electrically connected to drain electrodes of the select transistors 102 via the magneto resistive effect elements 101. The source lines 103 are electrically connected to source electrodes of the select transistors 102 via a wiring layer. The word lines 105 are electrically connected to gate electrodes of the select transistors 102. One end of the source lines 103 and the bit lines 104 is electrically connected to write drivers 1402 for applying voltage and to sense amplifiers 1403. One end of the word lines 105 is electrically connected to a word driver 1404.

(69) In an operation for writing 0, a voltage is applied from the write driver 1402 to the bit line 104 while a voltage is applied from the word driver 1404 to the word line 105 so as to cause a current to flow through the source line 103 via the magneto resistive effect element 101 selected by the bit line 104. At this time, when the magneto resistive effect element 101 is configured such that, as shown in FIG. 5, the first ferromagnetic layer 106 is the pinned layer and the second ferromagnetic layer 107 is the recording layer, the magneto resistive effect element 101 has a low resistance and retains information 0. On the other hand, in an operation for writing 1, a voltage is applied from the write driver 1402 to the source line 103 and a voltage is applied from the word driver 1404 to the word line 105 so as to cause a current to flow through the bit line 104 via the magneto resistive effect element 101 selected by the source line 103. At this time, the magneto resistive effect element 101 has a high resistance and retains information 1. At the time of reading, the difference in a signal due to resistance change is read by the sense amplifiers 1403. By adopting the memory array of such configuration, the MRAM can operate as a non-volatile memory in which the magnetoresistance ratio is increased, the write current density is decreased, and the thermal stability factor is increased.

DESCRIPTION OF REFERENCE SIGNS

(70) 100 Memory cell of magnetic memory 101 Magneto resistive effect element 102 Select transistor 103 Source line 104 Bit line 105 Word line 106 First ferromagnetic layer 107 Second ferromagnetic layer 108 Non-magnetic layer 501 Magnetization 502 Magnetization 503 Underlayer 504 Capping layer 1001 Pinned layer 1002 Ferromagnetic layer 1003 Non-magnetic layer 1004 Ferromagnetic layer 1005 Non-magnetic layer 1301 Antiferromagnetic layer 1401 Memory array 1402 Write driver 1403 Sense amplifier 1404 Word driver