Piezoelectric device and method for manufacturing piezoelectric device

Abstract

In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.

Claims

1. A method for manufacturing a piezoelectric device, comprising: an oxide-film forming step of forming on a support an oxide film having a composition that satisfies a condition of having less oxygen than a stoichiometric composition; and a piezoelectric-thin-film forming step of forming a piezoelectric thin film on a surface of the oxide film opposite to a surface thereof closer to the support; wherein the piezoelectric-thin-film forming step includes: an ion implantation step of implanting an ionized element into a piezoelectric substrate to form a region in which the concentration of the ionized element implanted into the piezoelectric substrate peaks; and a splitting step of splitting the piezoelectric substrate along the region in which the concentration of the implanted element peaks to form the piezoelectric thin film on the oxide film.

2. The method for manufacturing a piezoelectric device according to claim 1, wherein the oxide film is a silicon oxide film; and the composition of the oxide film satisfies a relationship 1.6y/x<2 in Si.sub.xO.sub.y.

3. The method for manufacturing a piezoelectric device according to claim 2, wherein the piezoelectric thin film includes single-crystal lithium niobate or single-crystal lithium tantalate.

4. The method for manufacturing a piezoelectric device according to claim 2, wherein: a thickness of the silicon oxide film is about 0.1 m to about 10 m; and a resistivity of the silicon oxide film is about 10.sup.6 .Math.cm or more.

5. The method for manufacturing a piezoelectric device according to claim 4, further comprising: a dielectric film forming step of forming a dielectric film between the support and the silicon oxide film.

6. The method for manufacturing a piezoelectric device according to claim 4, wherein the piezoelectric thin film includes single-crystal lithium niobate or single-crystal lithium tantalate.

7. The method for manufacturing a piezoelectric device according to claim 1, wherein the piezoelectric thin film includes single-crystal lithium niobate or single-crystal lithium tantalate.

8. The method for manufacturing a piezoelectric device according to claim 1, wherein the piezoelectric thin film includes single-crystal lithium niobate or single-crystal lithium tantalate.

9. The method for manufacturing a piezoelectric device according to claim 1, further comprising: an IDT electrode forming step of forming an IDT electrode on the piezoelectric thin film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A is an external perspective view of a surface acoustic wave device in Japanese Unexamined Patent Application Publication No. 6-326553. FIG. 1B is a sectional view taken along line A-A in FIG. 1A.

(2) FIG. 2 is a sectional view, taken along line A-A in FIG. 1A, schematically showing a flow of pyroelectric charge in the surface acoustic wave device in Japanese Unexamined Patent Application Publication No. 6-326553.

(3) FIG. 3 is a flowchart showing a method for manufacturing a piezoelectric device according to a preferred embodiment of the present invention.

(4) FIGS. 4A and 4B are sectional views schematically showing the process for manufacturing a piezoelectric device shown in FIG. 3.

(5) FIGS. 5A-5C are sectional views schematically showing the process for manufacturing a piezoelectric device shown in FIG. 3.

(6) FIGS. 6A and 6B are sectional views schematically showing the process for manufacturing a piezoelectric device shown in FIG. 3.

(7) FIGS. 7A and 7B are sectional views schematically showing the process for manufacturing a piezoelectric device shown in FIG. 3.

(8) FIG. 8 is a sectional view schematically showing a flow of pyroelectric charge in the piezoelectric device according to a preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(9) An example of a method for manufacturing a piezoelectric device according to a preferred embodiment of the present invention will now be described with reference to the drawings. As the method for manufacturing a piezoelectric device, a method for manufacturing a surface acoustic wave device will be described below by way of example.

(10) FIG. 3 is a flowchart showing the method for manufacturing a piezoelectric device according to a preferred embodiment of the present invention. FIGS. 4 to 7 are sectional views schematically showing a process for manufacturing a piezoelectric device according to the preferred embodiment of the present invention.

(11) Referring first to FIG. 4A, a single-crystal piezoelectric substrate 1 having a predetermined thickness is provided. Also provided is a support substrate 50 having a predetermined thickness, as shown in FIG. 5B, described later. The single-crystal piezoelectric substrate 1 preferably is a lithium tantalate (LT) substrate, and the support substrate 50 is a glass substrate. The support substrate 50 is a substrate on which a plurality of piezoelectric devices are to be arranged. Instead of a lithium tantalate substrate, the single-crystal piezoelectric substrate 1 may be a lithium niobate substrate, a lithium tetraborate substrate, a langasite substrate, or a potassium niobate substrate, for example. Instead of a glass substrate, the support substrate 50 may be, for example, a Si substrate, a quartz substrate, or a sapphire substrate, for example.

(12) Referring now to FIG. 4B, hydrogen ions are implanted into a surface 12 of the single-crystal piezoelectric substrate 1 to form an ion-implanted region 100 in the single-crystal piezoelectric substrate 1 (S101 in FIG. 3). For example, if the single-crystal piezoelectric substrate 1 is a lithium tantalate substrate, hydrogen ions preferably are implanted at a dose of about 1.010.sup.17 atoms/cm.sup.2 with an acceleration energy of about 80 keV to form a hydrogen-distributed region at a depth of about 500 nm from the surface 12, thus forming the ion-implanted region 100, for example. The ion-implanted region 100 is a region in which the concentration of the ion element implanted into the single-crystal piezoelectric substrate 1 peaks.

(13) If the single-crystal piezoelectric substrate 1 is a substrate other than a lithium tantalate substrate, ion implantation is performed under the conditions depending on the particular substrate.

(14) Referring now to FIG. 5A, dielectric films 90 and 91 are formed on the surface 12 of the single-crystal piezoelectric substrate 1 closer to the ion-implanted region 100 (S102 in FIG. 3). Specifically, in S102, a silicon oxide film 90 is preferably deposited to a thickness of about 700 nm on the surface 12 of the single-crystal piezoelectric substrate 1 closer to the ion-implanted region 100, and a silicon nitride film 91 is preferably deposited to a thickness of about 1,400 nm on the surface of the dielectric film 90 opposite to the side thereof closer to the single-crystal piezoelectric substrate 1. The silicon oxide film 90 and the silicon nitride film 91 are deposited by, for example, evaporation, sputtering, or CVD. The silicon oxide film 90 and the silicon nitride film 91 preferably are insulating films having resistivities of about 10.sup.4 .Math.cm or more, for example. As the temperature changes, the silicon oxide film 90 operates in the direction in which it cancels out the frequency shift of a piezoelectric thin film 10 formed of lithium tantalate.

(15) The silicon oxide film 90 is energetically lowest and most stable when the ratio of silicon atoms to oxygen atoms is 1:2, which is the stoichiometric composition. In this preferred embodiment, however, the silicon oxide film 90 has a composition that is deficient in oxygen relative to the stoichiometric composition. Specifically, the silicon oxide film 90 preferably has a composition satisfying the relationship 1.6y/x<2 in Si.sub.xO.sub.y, for example, as described in detail later.

(16) Referring now to FIG. 5B, the support substrate 50 is bonded to the single-crystal piezoelectric substrate 1 (S103 in FIG. 3). The support substrate 50 corresponds to a support.

(17) This bonding can be performed by direct bonding such as activation bonding or hydrophilic bonding or by bonding using interdiffusion through a metal layer, for example. Although the support substrate 50 preferably is bonded to the single-crystal piezoelectric substrate 1 in this preferred embodiment, the support substrate 50 may in practice be formed on the single-crystal piezoelectric substrate 1, for example, by deposition.

(18) The single-crystal piezoelectric substrate 1 is then split along the ion-implanted region 100 by heating the stack of the single-crystal piezoelectric substrate 1 and the support substrate 50 shown in FIG. 5B (to 500 C. in this preferred embodiment) in a vacuum atmosphere (S104 in FIG. 3).

(19) Referring now to FIG. 5C, a single-crystal piezoelectric thin film 10 preferably having a thickness of about 500 nm is formed on the support substrate 50 by the splitting step at S104. During heating in the splitting step at S104, no oxygen is supplied from the silicon oxide film 90 to the piezoelectric thin film 10 because the silicon oxide film 90 has a composition that is deficient in oxygen relative to the stoichiometric composition, which prevents oxidation of the piezoelectric thin film 10.

(20) The surface of the split-off piezoelectric thin film 10 is then planarized by polishing such as CMP (S105 in FIG. 3). The piezoelectric thin film 10 preferably has a surface roughness of about 0.5 nm or less in terms of arithmetic mean roughness Ra, for example.

(21) Referring now to FIG. 6A, upper electrodes 60A and 60B and interdigital transducer (IDT) electrodes 60C having a predetermined thickness are formed on the surface of the piezoelectric thin film 10, for example, using aluminum (Al) (S106 in FIG. 3).

(22) Instead of Al, the electrodes 60A to 60C may be formed using metals such as Al, W, Mo, Ta, Hf, Cu, Pt, Ti, and Au alone or in layers depending on the device specifications.

(23) Referring now to FIG. 6B, an insulating film 70 is formed on the surfaces of the piezoelectric thin film 10 and the electrodes 60A to 60C to protect the piezoelectric thin film 10 and the electrodes 60A to 60C (S107 in FIG. 3).

(24) Referring now to FIG. 7A, openings 82A and 82B are formed in the regions of the insulating film 70 where the upper electrodes 60A and 60B are to be exposed, for example, by etching (S108 in FIG. 3).

(25) Referring now to FIG. 7B, external terminals are formed (S109 in FIG. 3). Specifically, bump pads 61A and 61B are formed on the upper electrodes 60A and 60B, respectively, and bumps 62A and 62B are formed on the bump pads 61A and 61B, respectively.

(26) Finally, a separating step of separating a plurality of piezoelectric devices 101 formed on the support substrate 50 is performed, followed by packaging using a mold. In this manner, the piezoelectric devices 101 are formed. Thus, a plurality of piezoelectric devices 101 can be simultaneously manufactured. Because a plurality of piezoelectric devices 101 can be simultaneously manufactured in this preferred embodiment, the manufacturing costs of the piezoelectric devices 101 can be significantly reduced.

(27) As shown in FIG. 7B, the piezoelectric device 101 manufactured by the above method of manufacture includes the silicon oxide film 90 between the support substrate 50 and the piezoelectric thin film 10, which is extremely thin, for example, about 1 m or less thick. That is, the piezoelectric thin film 10 and the silicon oxide film are formed adjacent to each other. In this preferred embodiment, the silicon oxide film 90 has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film 90 to the piezoelectric thin film 10 during heat treatment of the piezoelectric device 101, for example, when the piezoelectric device 101 is mounted on a module board. This prevents oxidation of the piezoelectric thin film 10 and therefore formation of an oxide layer 121 (see FIG. 2) with high resistivity in the piezoelectric thin film 10. As a result, as shown in FIG. 8, a pyroelectric charge generated in the piezoelectric thin film 10 flows to the silicon oxide film 90.

(28) Thus, the piezoelectric device 101 and the method of manufacture thereof according to this preferred embodiment prevent oxidation of the extremely thin piezoelectric thin film 10 and prevent damage to the electrodes 60A to 60C formed on the piezoelectric thin film 10 caused by pyroelectric charge.

(29) The piezoelectric thin film 10, which is preferably formed of lithium tantalate, has pyroelectricity and high insulation properties. Thus, the piezoelectric device 101 and the method of manufacture thereof according to this preferred embodiment are suitable when the piezoelectric thin film 10 is formed using such a material.

(30) In the piezoelectric device 101 according to this preferred embodiment, the piezoelectric thin film 10, which is formed by an ion implantation step, particularly easily absorbs oxygen because strain remains in the crystal lattice after ion implantation. Thus, the piezoelectric device 101 and the method of manufacture thereof according to this preferred embodiment are suitable when the piezoelectric thin film 10 is formed by an ion implantation step.

(31) In this preferred embodiment, a single-crystal thin film is preferably formed by ion implantation, bonding, and splitting, for example. Such a single-crystal thin film has a higher piezoelectricity than a polycrystalline thin film deposited by, for example, sputtering, evaporation, or CVD. In addition, the piezoelectric thin film 10 has the same crystal orientation as the single-crystal piezoelectric substrate 1. Accordingly, a single-crystal piezoelectric substrate 1 having a crystal orientation depending on the properties of the piezoelectric device 101 may be provided to form a piezoelectric thin film 10 having a crystal orientation depending on those properties.

(32) The composition of the silicon oxide film 90 will now be described in detail.

(33) TABLE-US-00001 TABLE 1 Silicon oxide film (Si.sub.xO.sub.y) Resistivity Resistivity of LT thin film of LT thin before heat film after heat Resistivity of Composition treatment treatment silicon oxide Sample (y/x ) (cm) (cm) film (cm) Oxygen- 2.02 10.sup.10 10.sup.15 10.sup.13 rich Standard 2.00 10.sup.15 10.sup.13 Oxygen- 1.99 10.sup.11 10.sup.13 deficient 1 Oxygen- 1.97 10.sup.11 10.sup.13 deficient 2 Oxygen- 1.95 10.sup.10 10.sup.12 deficient 3 Oxygen- 1.90 10.sup.10 10.sup.12 deficient 4 Oxygen- 1.80 10.sup.10 10.sup.12 deficient 5 Oxygen- 1.70 10.sup.10 10.sup.9 deficient 6 Oxygen- 1.60 10.sup.10 10.sup.6 deficient 7 Oxygen- 1.55 10.sup.10 10.sup.4 deficient 8

(34) Table 1 shows the results of an experiment in which ten samples of the piezoelectric device 101 having the structure shown in FIG. 7B were prepared with varying compositions of the silicon oxide film 90 and were heat-treated in a vacuum atmosphere at 500 C. for 30 minutes to measure the resistivity of the piezoelectric thin film 10 and the resistivity of the silicon oxide film 90 after the heat treatment.

(35) To avoid problems such as damage to the lithium tantalate piezoelectric thin film 10 by pyroelectric charge, the piezoelectric thin film 10 preferably has a resistivity of about 10.sup.11 .Math.cm or less. Accordingly, as shown in Table 1, the silicon oxide film 90 preferably has a composition satisfying the relationship y/x<2 in Si.sub.xO.sub.y, for example.

(36) At the same time, the dielectric film preferably has sufficient insulation properties. If the thickness of the dielectric film, i.e., the silicon oxide film 90, is about 0.1 to 10 m, the resistivity of the silicon oxide film 90 is preferably about 10.sup.6 .Math.cm or more, which does not adversely affect the characteristics of surface acoustic wave devices. Accordingly, as shown in Table 1, the silicon oxide film 90 preferably has a composition satisfying the relationship 1.6y/x, for example.

(37) Thus, if the thickness of the silicon oxide film 90 is about 0.1 m to about 10 m, for example, a silicon oxide film 90 having a composition satisfying the relationship 1.6y/x<2 is preferably deposited in the step at S102 for use with surface acoustic wave devices.

(38) Although the dielectric film 90 in the above preferred embodiment preferably is a silicon oxide film, the dielectric film 90 may in practice be formed of other oxides such as aluminum oxide, tantalum oxide, and zinc oxide, for example. Such oxide films provide the same advantages as in the above preferred embodiment if they have a composition that is deficient in oxygen relative to the stoichiometric composition. The following compositions inhibit oxidation of the piezoelectric thin film 10 and also allow the resistivity of the oxide film itself to be set to a level that does not adversely affect the characteristics of piezoelectric devices:

(39) for an aluminum oxide film, a composition satisfying 1y/x<1.5 in Al.sub.xO.sub.y;

(40) for a tantalum oxide film, a composition satisfying 2y/x<2.5 in Ta.sub.xO.sub.y; and

(41) for a zinc oxide film, a composition satisfying 0.6y/x<1 in Zn.sub.xO.sub.y.

(42) Although the above preferred embodiments illustrate surface acoustic wave devices, the method of manufacture according to the present invention is also applicable to various other devices based on a single-crystal piezoelectric thin film and having a membrane, including boundary acoustic wave devices, bulk wave devices, gyroscopes, RF switches, and vibration-type energy generators.

(43) The description of the above preferred embodiments is illustrative in all aspects and should not be construed as limiting. The scope of the present invention is defined by the claims, rather than by the above preferred embodiments. All modifications within the meaning and range of equivalents of the claims are intended to be included within the scope of the present invention.

(44) While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.