Semiconductor Chip, Optoelectronic Device with a Semiconductor Chip, and Method for Producing a Semiconductor Chip

Abstract

A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.

Claims

1-17. (canceled)

18. A semiconductor chip for protection against electrostatic discharges, the chip comprising: a semiconductor body with a first main surface and a second main surface arranged opposite the first main surface, wherein the semiconductor body comprises a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface; and a metallic contact element that extends from the first main surface to the second main surface, the metallic contact element being electrically isolated from one of the sub-regions.

19. The semiconductor chip according to claim 18, wherein the n-doped sub-region electrically isolates the p-doped sub-region from the metallic contact element.

20. The semiconductor chip according to claim 18, wherein the semiconductor body comprises an electrically insulating layer that isolates the p-doped sub-region from the metallic contact element.

21. The semiconductor chip according to claim 18, wherein the metallic contact element is arranged in an opening in the semiconductor body, the opening extending from the first main surface to the second main surface.

22. The semiconductor chip according to claim 21, wherein the opening comprises a wall, and wherein an electrically insulating layer is disposed on the wall.

23. The semiconductor chip according to claim 18, wherein the metallic contact element is arranged on a side face of the semiconductor body connecting the first and second main surfaces.

24. The semiconductor chip according to claim 18, wherein the p-doped sub-region extends from the first main surface to the second main surface.

25. A method for producing a semiconductor chip, the method comprising: providing a semiconductor body that is doped with a first conductivity type, wherein a sub-region of the semiconductor body has a second conductivity type different from the first conductivity type, wherein the first and second conductivity types are selected from p-doping and n-doping such that the semiconductor body comprises a p-doped sub-region and an n-doped sub-region, arranging a metallic contact element in or on the semiconductor body such that the metallic contact element extends from a first main surface of the semiconductor body to a second main surface of the semiconductor body, the second main surface being opposite the first main surface, wherein the metallic contact element is electrically isolated from one of the sub-regions.

26. The method according to claim 25, further comprising forming the sub-region of the second conductivity type by diffusion doping.

27. The method according to claim 25, wherein arranging the metallic contact element comprises galvanically depositing or plating a metallic material.

28. The method according to claim 25, wherein the semiconductor body comprises an opening, the opening extending from the first to the second main surfaces, and wherein the metallic contact element is arranged in the opening.

29. The method according to claim 28, further comprising forming a thermal oxidation on a wall of the opening thereby forming an electrically insulating layer.

30. The method according to claim 28, wherein the sub-region of the second conductivity type is located on the second main surface and a surface region of the first main surface surrounding the opening and adjoining the opening is formed as an electrically insulating region by thermal oxidation or is doped with the second conductivity type by a doping method.

31. The method according to claim 25, wherein the semiconductor body comprises trenches on one side, the trenches separate projections from one another, and wherein the side with the trenches and the projections provides a large area of a sub-region with the second conductivity type.

32. The method according to claim 31, wherein metallic contact elements are applied to the projections between the trenches in the sub-region of the second conductivity type.

33. The method according to claim 31, further comprising singulating the semiconductor body along the trenches thereby forming a plurality of semiconductor chips, the first and second main surfaces of the semiconductor chips are produced at least in part by the singulation.

34. An optoelectronic device comprising: a semiconductor chip according to claim 18; an optoelectronic semiconductor component configured to detect or emit light, the optoelectronic semiconductor component comprises two mutually opposing main surfaces, one of which is transmissive to light; and a package body form-fittingly enclosing the semiconductor chip and the optoelectronic semiconductor component at side faces connecting the respective main surfaces, wherein two mutually isolated electrical connecting elements are arranged on the package body on a mounting side opposite a light-transmitting main surface of the optoelectronic semiconductor component, between which connecting elements the semiconductor chip and the optoelectronic semiconductor component are interconnected in parallel, and wherein one of the connecting elements is electrically conductively connected with the metallic contact element and the other one of the connecting elements is connected electrically conductively with the sub-region of the semiconductor chip which is electrically isolated from the metallic contact element.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Further advantages, advantageous embodiments and further developments are revealed by the exemplary embodiments described below in association with the figures, in which:

[0030] FIGS. 1A to 1G are schematic representations of method steps of a method for producing a semiconductor chip according to an exemplary embodiment;

[0031] FIGS. 2A to 2C are schematic representations of an optoelectronic device with a semiconductor chip according to a further exemplary embodiment;

[0032] FIGS. 3A to 3E are schematic representations of method steps of a method for producing a semiconductor chip according to a further exemplary embodiment; and

[0033] FIG. 4 is a schematic representation of a portion of an optoelectronic device with a semiconductor chip according to a further exemplary embodiment.

[0034] In the exemplary embodiments and figures, identical, similar or identically acting elements are provided in each case with the same reference numerals. The elements illustrated and their size ratios to one another should not be regarded as being to scale, but rather individual elements, such as for example layers, components, devices and regions, may have been made exaggeratedly large to illustrate them better and/or to aid comprehension.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0035] FIGS. 1A to 1G show method steps of a method for producing a semiconductor chip 10 which is configured to provide protection against electrostatic discharges. In particular, the semiconductor chip 10, which is shown in FIG. 1E in a sectional representation, in FIG. 1F in plan view and additionally in FIG. 1G in the form of an equivalent circuit diagram, is provided with a diode part configured as an ESD protection diode and is thus configured inter alia as an ESD protection diode.

[0036] In a first method step, a semiconductor body 1 is provided, as shown in FIG. 1A, which is doped with a first conductivity type. A sub-region of the semiconductor body 1 is provided with a second conductivity type different from the first conductivity type, wherein the first and second conductivity types are selected from p-doping and n-doping.

[0037] In the exemplary embodiment shown, the semiconductor body 1 comprises silicon, from which the semiconductor body 1 substantially consists. This means that the semiconductor body 1 comprises silicon with doping of a first conductivity type, which in the exemplary embodiment shown is p-doping. By doping a sub-region of the semiconductor body 1 with the second conductivity type, which in the exemplary embodiment shown is accordingly n-doping, the n-doped sub-region 3 is formed, while the remainder of the semiconductor body forms a p-doped sub-region 2. The conductivity types of the sub-regions 2 and 3 may also be the opposite of the present description. The doping of the semiconductor body 1, i.e. the p-doping of the p-doped sub-region 2 and the n-doping of the n-doped sub-region 3, depends on the requirements with regard to the breakdown voltage of the ESD protection diode to be produced.

[0038] The semiconductor body 1, which in the exemplary embodiment shown is cuboidal in shape, may for example also be part of a semiconductor wafer such as for instance a silicon wafer, on which the method steps described here and below are performed in a plurality of regions arranged adjacent one another. A plurality of semiconductor chips 10 may then obtained by subsequent singulation of the wafer.

[0039] The semiconductor body 1 comprises a first main surface 12 and a second main surface 13, wherein the second main surface 13 is arranged opposite the first main surface 12. The p-doped sub-region 2 forms at least part of the first main surface 12, in the exemplary embodiment shown the entirety of the first main surface 12, while the n-doped sub-region 3 forms part of the second main surface 13. Since the n-doped sub-region 3 is formed merely in a limited area of the second main surface 13, the p-doped sub-region 2 extends from the first main surface 12 to the second main surface 13.

[0040] In a further method step, as shown in FIG. 1B, a region of the first main surface 12 is provided with an electrically insulating layer, so producing an electrically insulating region 4. The electrically insulating region 4 is offset laterally relative to the n-doped sub-region 3. A lateral direction is here and hereinafter understood to mean a direction parallel to the main surfaces 12, 13. The electrically insulating region 4 may for example be produced by oxidation, for instance by thermal oxidation, of the silicon of the semiconductor body 1. Alternatively, it may also be possible for an electrically insulating layer, for example of silicon oxide, to be applied to the first main surface 12 as an insulating region 4. Furthermore, it may also be possible to dope the region 4 with a conductivity type which differs from the conductivity type of the sub-region 2, i.e. with n-doping in the exemplary embodiment shown. As an alternative to an electrically insulating region 4, it is thus also possible for an n-doped region on the first main surface 12 to be offset laterally relative to the n-doped region 3 on the second main surface 13.

[0041] In a further method step, shown in FIG. 1C, an opening 5 extending from the first main surface 12 to the second main surface 13 is formed in the semiconductor body 1, through the electrically insulating region 4.

[0042] The configuration of the n-doped sub-region 3 and of the opening 5 may be produced using conventional semiconductor processing methods, in the present case in particular using conventional silicon technology. For instance, the n-doped sub-region 3 may be produced, for example, by diffusion doping.

[0043] In a further method step, which is shown in FIG. 1D, the opening 5 is insulated electrically with respect to the semiconductor body 1 and in particular the p-doped sub-region 2. To this end, the wall of the opening 5 is provided with an electrically insulating layer 6 by means of thermal oxidation. As an alternative, it may also be possible for an electrically insulating layer 6 to be applied to the wall of the opening 5.

[0044] The opening 5 is then refilled metallically in a further method step, shown in FIG. 1E, such that a metallic contact element 7 is formed in the opening 5 which connects the first main surface 12 and the second main surface 13 of the semiconductor body 1 to one another. The metallic contact element 7, which is produced for example by galvanic deposition or plating and which may comprise nickel and/or copper, takes the form, in the finished semiconductor chip 10 of an electrical via through the semiconductor body 1 next to the diode part, which is formed by the p-doped sub-region 2 and the n-doped sub-region 3.

[0045] In addition to the sectional representation of FIG. 1E, FIG. 1F shows the semiconductor chip 10 in plan view onto the second main surface 13. FIG. 1G shows a corresponding equivalent circuit diagram of the semiconductor chip 10 with the ESD protection diode formed by the sub-regions 2, 3 and the electrical bushing formed by the metallic contact element 7.

[0046] As a result of the electrically insulating region 4, the metallic contact element 7 is electrically insulated from the p-doped sub-region 2 at the first main surface 12, such that at the first main surface 12 the diode and the electrical bushing may be electrically connected separately of one another.

[0047] FIGS. 2A to 2C show various views and an equivalent circuit diagram of an optoelectronic device 100 which comprises a semiconductor chip 10 according to the previous exemplary embodiment. FIG. 2A here corresponds to a plan view onto a top of the optoelectronic device 100, faced by the second main surface 13 of the semiconductor chip 10, while FIG. 2B shows a plan view onto a mounting side of the optoelectronic device 100, faced by the first main surface 12 of the semiconductor chip 10.

[0048] The optoelectronic device 100 comprises, in addition to the semiconductor chip 10, an optoelectronic semiconductor component 20 which is designed to detect or emit light when in operation. In the exemplary embodiment shown, the optoelectronic semiconductor component 20 is configured purely by way of example as a light-emitting diode chip which comprises a light-transmitting main surface which faces the top of the optoelectronic device 100 and via which the optoelectronic semiconductor component 20 may emit light when in operation. In the exemplary embodiment shown, a wavelength conversion element 21 is further applied to the light-transmitting main surface of the semiconductor component 20, which wavelength conversion element 21 may convert some of the light generated by the optoelectronic semiconductor component when in operation into light of a different wavelength. As an alternative to the exemplary embodiment shown, the optoelectronic semiconductor component 20 may for example also take the form of a laser diode chip or a photodiode chip. Furthermore, further or other optical components such as for example a diffuser element and/or a lens may also be arranged over the optoelectronic semiconductor component 20. The optoelectronic semiconductor component 20 is electrically contacted on each of the main surfaces, such that the semiconductor component 20 has an electrical connection option on each of its top and bottom, for example in the form of an electrode layer.

[0049] The optoelectronic device 100 additionally comprises a package body 22, which form-fittingly encloses the semiconductor chip 10 and the optoelectronic semiconductor component 20 at their respective side faces. The side faces of the semiconductor chip 10 and of the optoelectronic semiconductor component 20 are those respective surfaces which connect the respective main surfaces.

[0050] The package body 22 may in particular take the form of a molding of a plastics material or a low-melting glass or a low-melting glass-ceramic and be produced using a molding process as described in the introductory part, by which the semiconductor chip 10 and the optoelectronic semiconductor component 20 are encapsulated in the material of the package body 22.

[0051] The package body forms, together with the semiconductor chip 10 and the optoelectronic semiconductor component 20, an Embedded Wafer Level component, which may be produced in a composite with a plurality of such components, which may be subdivided by dicing the package body material into individual optoelectronic devices 100. The package body 22 thus forms in the composite an artificial wafer in which a plurality of semiconductor chips 10 and optoelectronic semiconductor components 20 are arranged.

[0052] On the mounting side of the optoelectronic device 100 shown in FIG. 2B, two mutually isolated electrical connecting elements 23, 24 are arranged, which take the form of electrode layers, for example comprising or consisting of copper and/or nickel. The electrical connecting element 23 here extends partly over the first main surface 12 of the semiconductor chip 10 facing the mounting side and over the main surface of the optoelectronic semiconductor component 20 facing the mounting side, such that these are connected together electrically conductively. In other words, a back, i.e. a side opposite the light-transmitting main surface, of the optoelectronic semiconductor component 20 is connected electrically conductively with the p-doped sub-region 2 of the semiconductor chip 10. The further connecting element 24 on the mounting side of the optoelectronic device 100 is arranged on the electrically insulating region 4 and thus is only in electrical contact with the metallic contact element 7.

[0053] As is clear from FIG. 2A, a further electrical connecting element 25 in the form of a further electrode layer is arranged on the top of the optoelectronic device 100 opposite the mounting side, which electrode layer electrically conductively connects the n-doped sub-region 3 both with the metallic contact element 7 and with the top of the optoelectronic semiconductor component 20. The electrical connecting element 25 may in this case be electrically insulated from the p-doped sub-region 2 by means of a suitable insulator layer on the second main surface 13 of the semiconductor chip 10 (not shown).

[0054] As is visible in FIGS. 2A and 2B and also in the equivalent circuit diagram of FIG. 2C, the optoelectronic semiconductor component 20 is connected at the front, i.e. the light-transmitting main surface, which is a p-side of the semiconductor component 20, via the metallic contact element 7 with the back. At the same time, the p-side of the semiconductor component 20 is electrically conductively connected with the n-doped sub-region 3 of the diode part of the semiconductor chip 10. At the back, the n-side of the optoelectronic semiconductor component 20 is accordingly connected with the p-doped sub-region 2 and thus with the p-side of the diode part of the semiconductor chip 10, while the metallic contact element 7, as a metallic through-via isolated therefrom, forms the contact to the p-side of the optoelectronic semiconductor component 20. In comparison with corresponding known devices, in which the electrical bushing has to be produced and positioned separately from an ESD chip, all that remains to be done in the case of the optoelectronic device 100 shown here is to position, in addition to the optoelectronic semiconductor component 20, a single component in the form of the semiconductor chip 10 which has both functionalities, i.e. an ESD protection function and a metallic bushing isolated electrically therefrom.

[0055] FIGS. 3A to 3E shows a further exemplary embodiment of a method for producing a semiconductor chip 10.

[0056] In a first method step, which is shown in FIG. 3A, as in the method of FIGS. 1A to 1G a semiconductor body 1 is provided which is doped with a first conductivity type. As in the previous exemplary embodiment, the semiconductor body 1 may comprise silicon which is p-doped. The semiconductor body 1 is configured in the exemplary embodiment shown as a semiconductor wafer, which is provided to produce a plurality of semiconductor chips 10.

[0057] In a further method step, which is shown in FIG. 3B, the semiconductor body 1 is provided from one side with trenches 31 and projections 32 arranged therebetween.

[0058] The trenches 31 may for example be produced by an etching method. The projections 32 are separated from one another by the trenches 31.

[0059] In a further method step, which is shown in FIG. 3C, the side with the trenches 31 and the projections 32 is configured over a large area as a sub-region of the second conductivity type. In the exemplary embodiment shown, an n-doped sub-region 3 is formed by corresponding n-doping on the entire surface of the semiconductor body 1 formed by the trenches 31 and the projections 32, while the remainder of the semiconductor body 1 forms a p-doped sub-region 2.

[0060] In a further method step, which is shown in FIG. 3D, the top of the projections 32 is provided with metallization. In particular, a plurality of metallic contact elements 7 are applied to the projections 32 between the trenches 31 on the n-doped sub-region 3, for example by galvanic deposition or plating.

[0061] In a further method step, the semiconductor body 1 still in the form of a semiconductor wafer is singulated along dividing lines 9 indicated by way of example in FIG. 3D along the trenches 31 in such a way that a plurality of semiconductor chips 10 is produced, the first and second main surfaces of which are produced at least in part by the singulation. FIG. 3E shows a corresponding semiconductor chip 10, which for example has a height H of 120 m and a length L of 200 m, these also being shown in FIG. 3D for the sake of clarification.

[0062] FIG. 4 shows a schematic view of a portion of an optoelectronic device 100 with a semiconductor chip 10 produced using the method of FIGS. 3A to 3E. The semiconductor chip 10 is introduced in a tilted manner into the artificial wafer formed by the package body 22 and, like the semiconductor chip 10 described in conjunction with FIGS. 1A to 1G, may provide both an ESD function and a bushing. The optoelectronic device 100 of FIG. 4 constitutes a modification of the exemplary embodiment shown in FIGS. 2A to 2C and merely shows, in sectional representation, the region in which the semiconductor chip 10 is arranged.

[0063] The electrical connecting elements 23, 24, 25 correspond to the electrical connecting elements 23, 24, 25 of the exemplary embodiment of FIGS. 2A to 2C, wherein FIG. 4 additionally shows an electrically insulating layer 26 for insulating the p-doped sub-region 2 at the second main surface 13 from the electrical connecting element 25.

[0064] The exemplary embodiments described in conjunction with the figures may alternatively or additionally comprise further features according to the introductory part of the description.

[0065] The description made with reference to exemplary embodiments does not restrict the invention to these embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the claims, even if this feature or this combination is not itself explicitly indicated in the claims or exemplary embodiments.