ORGANOMETALLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME

Abstract

Disclosed is an organometallic compound represented by a following Chemical Formula 1. The organometallic compound acts as a dopant of a light-emitting layer of an organic light-emitting diode. Thus, operation voltage of the diode is lowered, and luminous efficiency and lifespan thereof are improved:

Ir(L.sub.A).sub.m(L.sub.B).sub.n  [Chemical Formula 1] where in the Chemical Formula 1, L.sub.A represents a main ligand, and is one selected from a group consisting of Chemical Formula 2-1, Chemical Formula 2-2, and Chemical Formula 2-3, L.sub.B denotes an ancillary ligand represented by a Chemical Formula 3, each of m and n denotes a number of the ligands bound to Ir (iridium), and m is 1, 2 or 3, and n is 0, 1 or 2, and a sum of m and n is 3.

Claims

1. An organometallic compound represented by a following Chemical Formula 1:
Ir(L.sub.A).sub.m(L.sub.B).sub.n  [Chemical Formula 1] where in the Chemical Formula 1, L.sub.A represents a main ligand, and is one selected from a group consisting of following Chemical Formula 2-1, Chemical Formula 2-2, and Chemical Formula 2-3, L.sub.B denotes an ancillary ligand represented by a following Chemical Formula 3, each of m and n denotes a number of the ligands bound to Ir (iridium), and m is 1, 2 or 3, and n is 0, 1 or 2, and a sum of m and n is 3, ##STR00148## wherein in each of the Chemical Formulas 2-1 to 2-3, X independently represents one selected from a group consisting of oxygen, sulfur, C(R).sub.2 and NR, each of R, R.sub.1, R.sub.2-1, R.sub.2-2, R.sub.2-3, R.sub.3-1, R.sub.3-2, R.sub.3-3, R.sub.3-4 and R.sub.3-5 independently represents one selected from a group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, and phosphino, in each of the Chemical Formulas 2-1 to 2-3, two functional groups adjacent to each other among R.sub.2-1, R.sub.2-2 and R.sub.2-3 may be combined with each other to form a ring structure, and two functional groups adjacent to each other among R.sub.3-1, R.sub.3-2, R.sub.3-3, R.sub.3-4 and R.sub.3-5 may be combined with each other to form a ring structure, wherein the ancillary ligand represented by the Chemical Formula 3 is a bidentate ligand, and the bidentate ligand is represented by a following Chemical Formula 4 or a following Chemical Formula 5: ##STR00149## wherein in the Chemical Formula 4, each of R.sub.4-1, R.sub.4-2, R.sub.4-3, R.sub.4-4, R.sub.5-1, R.sub.5-2, R.sub.5-3 and R.sub.5-4 independently represents one selected from a group consisting of hydrogen, deuterium, a C1 to C5 linear alkyl group, and C1 to C5 branched alkyl group, wherein the C1 to C5 linear alkyl group or the C1 to C5 branched alkyl group may be substituted with at least one selected from deuterium and a halogen element, two functional groups adjacent to each other among R.sub.4-1, R.sub.4-2, R.sub.4-3 and R.sub.4-4 may be combined with each other to form a ring structure, and two functional groups adjacent to each other among R.sub.5-1, R.sub.5-2, R.sub.5-3 and R.sub.5-4 may be combined with each other to form a ring structure, wherein in the Chemical Formula 5, each of R.sub.6, R.sub.7 and R.sub.8 independently represents one selected from a group consisting of hydrogen, deuterium, C1 to C5 linear alkyl group and C1 to C5 branched alkyl group, wherein the C1 to C5 linear alkyl group or the C1 to C5 branched alkyl group may be substituted with at least one selected from deuterium and a halogen element, two functional groups adjacent to each other among R.sub.6, R.sub.7 and R.sub.8 may combine with each other to form a ring structure.

2. The organometallic compound of claim 1, wherein m is 1 and n is 2.

3. The organometallic compound of claim 1, wherein m is 2, and n is 1.

4. The organometallic compound of claim 1, wherein m is 3, and n is 0.

5. The organometallic compound of claim 1, wherein the compound represented by the Chemical Formula 1 includes one selected from a group consisting of following compounds 1 to 370: ##STR00150## ##STR00151## ##STR00152## ##STR00153## ##STR00154## ##STR00155## ##STR00156## ##STR00157## ##STR00158## ##STR00159## ##STR00160## ##STR00161## ##STR00162## ##STR00163## ##STR00164## ##STR00165## ##STR00166## ##STR00167## ##STR00168## ##STR00169## ##STR00170## ##STR00171## ##STR00172## ##STR00173## ##STR00174## ##STR00175## ##STR00176## ##STR00177## ##STR00178## ##STR00179## ##STR00180## ##STR00181## ##STR00182## ##STR00183## ##STR00184## ##STR00185## ##STR00186## ##STR00187## ##STR00188## ##STR00189## ##STR00190## ##STR00191## ##STR00192## ##STR00193## ##STR00194## ##STR00195## ##STR00196## ##STR00197## ##STR00198## ##STR00199## ##STR00200## ##STR00201## ##STR00202## ##STR00203## ##STR00204## ##STR00205## ##STR00206## ##STR00207## ##STR00208## ##STR00209## ##STR00210## ##STR00211## ##STR00212## ##STR00213## ##STR00214## ##STR00215## ##STR00216## ##STR00217## ##STR00218## ##STR00219## ##STR00220## ##STR00221## ##STR00222## ##STR00223## ##STR00224## ##STR00225## ##STR00226## ##STR00227## ##STR00228## ##STR00229## ##STR00230##

6. The organometallic compound of claim 1, wherein the compound represented by the Chemical Formula 1 is used as a green phosphorescent material.

7. An organic light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and an organic layer disposed between the first electrode and the second electrode; wherein the organic layer includes a light-emitting layer, wherein the light-emitting layer contains the organometallic compound according to claim 1.

8. The organic light-emitting diode of claim 7, wherein the organometallic compound is used as dopant of the light-emitting layer.

9. The organic light-emitting diode of claim 7, wherein a host material of the light-emitting layer includes a compound containing a carbazole group.

10. The organic light-emitting diode of claim 9, wherein the compound containing the carbazole group includes at least one selected from compounds of following structures: ##STR00231## ##STR00232## ##STR00233##

11. The organic light-emitting diode of claim 7, wherein the organic layer further includes at least one selected from a group consisting of a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer.

12. An organic light-emitting display device comprising: a substrate; a driving element positioned on the substrate; and an organic light-emitting element disposed on the substrate and connected to the driving element, wherein the organic light-emitting element includes the organic light-emitting diode according to claim 7.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0027] The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this application, illustrate embodiments of the disclosure and together with the description serve to explain various principles.

[0028] FIG. 1 is a cross-sectional view schematically showing an organic light-emitting diode in which a light-emitting layer contains an organometallic compound according to an illustrative embodiment of the present disclosure.

[0029] FIG. 2 is a cross-sectional view schematically illustrating an organic light-emitting diode having a tandem structure having two light-emitting stacks and containing an organometallic compound represented by the Chemical Formula 1 according to an illustrative embodiment of the present disclosure.

[0030] FIG. 3 is a cross-sectional view schematically illustrating an organic light-emitting diode having a tandem structure having three light-emitting stacks and containing an organometallic compound represented by the Chemical Formula 1 according to an illustrative embodiment of the present disclosure.

[0031] FIG. 4 is a cross-sectional view schematically illustrating an organic light-emitting display device including an organic light-emitting diode according to an illustrative embodiment of the present disclosure.

DETAILED DESCRIPTION

[0032] Advantages and features of the present disclosure, and a method of achieving the advantages and features will become apparent with reference to embodiments described later in detail together with the accompanying drawings. However, the present disclosure is not limited to the embodiments as disclosed below, but may be implemented in various different forms. Thus, these embodiments are set forth only to make the present disclosure complete, and to completely inform the scope of the present disclosure to those of ordinary skill in the technical field to which the present disclosure belongs, and the present disclosure is only defined by the scope of the claims.

[0033] A shape, a size, a ratio, an angle, a number, etc. disclosed in the drawings for describing the embodiments of the present disclosure are illustrative, and the present disclosure is not limited thereto. The same reference numerals refer to the same elements herein. Further, descriptions and details of well-known steps and elements are omitted for simplicity of the description. Furthermore, in the following detailed description of the present disclosure, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be understood that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, components, and circuits have not been described in detail so as not to unnecessarily obscure aspects of the present disclosure.

[0034] The terminology used herein is directed to the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure. As used herein, the singular constitutes “a” and “an” are intended to include the plural constitutes as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprise”, “comprising”, “include”, and “including” when used in this specification, specify the presence of the stated features, integers, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, operations, elements, components, and/or portions thereof. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expression such as “at least one of” when preceding a list of elements may modify the entire list of elements and may not modify the individual elements of the list. In interpretation of numerical values, an error or tolerance therein may occur even when there is no explicit description thereof.

[0035] In addition, it will also be understood that when a first element or layer is referred to as being present “on” a second element or layer, the first element may be disposed directly on the second element or may be disposed indirectly on the second element with a third element or layer being disposed between the first and second elements or layers. It will be understood that when an element or layer is referred to as being “connected to”, or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer, or one or more intervening elements or layers may be present. In addition, it will also be understood that when an element or layer is referred to as being “between” two elements or layers, it may be the only element or layer between the two elements or layers, or one or more intervening elements or layers may also be present.

[0036] Further, as used herein, when a layer, film, region, plate, or the like is disposed “on” or “on a top” of another layer, film, region, plate, or the like, the former may directly contact the latter or still another layer, film, region, plate, or the like may be disposed between the former and the latter. As used herein, when a layer, film, region, plate, or the like is directly disposed “on” or “on a top” of another layer, film, region, plate, or the like, the former directly contacts the latter and still another layer, film, region, plate, or the like is not disposed between the former and the latter. Further, as used herein, when a layer, film, region, plate, or the like is disposed “below” or “under” another layer, film, region, plate, or the like, the former may directly contact the latter or still another layer, film, region, plate, or the like may be disposed between the former and the latter. As used herein, when a layer, film, region, plate, or the like is directly disposed “below” or “under” another layer, film, region, plate, or the like, the former directly contacts the latter and still another layer, film, region, plate, or the like is not disposed between the former and the latter.

[0037] In descriptions of temporal relationships, for example, temporal precedent relationships between two events such as “after”, “subsequent to”, “before”, etc., another event may occur therebetween unless “directly after”, “directly subsequent” or “directly before” is not indicated.

[0038] It will be understood that, although the terms “first”, “second”, “third”, and so on may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section described below could be termed a second element, component, region, layer or section, without departing from the spirit and scope of the present disclosure.

[0039] The features of the various embodiments of the present disclosure may be partially or entirely combined with each other, and may be technically associated with each other or operate with each other. The embodiments may be implemented independently of each other and may be implemented together in an association relationship.

[0040] In interpreting a numerical value, the value is interpreted as including an error range unless there is no separate explicit description thereof.

[0041] It will be understood that when an element or layer is referred to as being “connected to”, or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer, or one or more intervening elements or layers may be present. In addition, it will also be understood that when an element or layer is referred to as being “between” two elements or layers, it may be the only element or layer between the two elements or layers, or one or more intervening elements or layers may also be present.

[0042] The features of the various embodiments of the present disclosure may be partially or entirely combined with each other, and may be technically associated with each other or operate with each other. The embodiments may be implemented independently of each other and may be implemented together in an association relationship.

[0043] Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concept belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0044] An organometallic compound according to some embodiments of the present disclosure may be represented by a following Chemical Formula 1. When the organometallic compound is used as a dopant of a light emission layer of an organic light-emitting diode, luminous efficiency and lifetime of the diode may be improved:

Ir(L.sub.A).sub.m(L.sub.B).sub.n  [Chemical Formula 1]

[0045] where in the Chemical Formula 1, L.sub.A represents a main ligand, and is one selected from a group consisting of following Chemical Formula 2-1, Chemical Formula 2-2, and Chemical Formula 2-3,

[0046] L.sub.B denotes an ancillary ligand represented by a following Chemical Formula 3,

[0047] each of m and n denotes a number of the ligands bound to Ir (iridium), and m is 1, 2 or 3, and n is 0, 1 or 2, and a sum of m and n is 3,

##STR00004##

[0048] wherein in each of the Chemical Formulas 2-1 to 2-3, X independently represents one selected from a group consisting of oxygen, sulfur, C(R).sub.2 and NR,

[0049] each of R, R.sub.1, R.sub.2-1, R.sub.2-2, R.sub.2-3, R.sub.3-1, R.sub.3-2, R.sub.3-3, R.sub.3-4 and R.sub.3-5 independently represents one selected from a group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, and phosphino,

[0050] in each of the Chemical Formulas 2-1 to 2-3, two functional groups adjacent to each other among R.sub.2-1, R.sub.2-2 and R.sub.2-3 may be combined with each other to form a ring structure, and two functional groups adjacent to each other among R.sub.3-1, R.sub.3-2, R.sub.3-3, R.sub.3-4 and R.sub.3-5 may be combined with each other to form a ring structure,

[0051] wherein the ancillary ligand represented by the Chemical Formula 3 is a bidentate ligand, and the bidentate ligand is represented by a following Chemical Formula 4 or a following Chemical Formula 5:

##STR00005##

[0052] wherein in the Chemical Formula 4, each of R.sub.4-1, R.sub.4-2, R.sub.4-3, R.sub.4-4, R.sub.5-4, R.sub.5-2, R.sub.5-3 and R.sub.5-4 independently represents one selected from a group consisting of hydrogen, deuterium, a C1 to C5 linear alkyl group, and C1 to C5 branched alkyl group, wherein the C1 to C5 linear alkyl group or the C1 to C5 branched alkyl group may be substituted with at least one selected from deuterium and a halogen element,

[0053] two functional groups adjacent to each other among R.sub.4-1, R.sub.4-2, R.sub.4-3 and R.sub.4-4 may be combined with each other to form a ring structure, and two functional groups adjacent to each other among R.sub.5-1, R.sub.5-2, R.sub.5-3 and R.sub.5-4 may be combined with each other to form a ring structure,

[0054] wherein in the Chemical Formula 5, each of R.sub.6, R.sub.7 and R.sub.8 independently represents one selected from a group consisting of hydrogen, deuterium, C1 to C5 linear alkyl group and C1 to C5 branched alkyl group, wherein the C1 to C5 linear alkyl group or the C1 to C5 branched alkyl group may be substituted with at least one selected from deuterium and a halogen element,

[0055] two functional groups adjacent to each other among R.sub.6, R.sub.7 and R.sub.8 may combine with each other to form a ring structure.

[0056] As described above, the ancillary ligand bound to iridium (Ir) as a central coordination metal may be the bidentate ligand. The bidentate ligand may contain an electron donor, thereby increasing an amount of MLCT (metal to ligand charge transfer), thereby allowing the organic light-emitting diode to exhibit improved luminous properties such as high luminous efficiency and high external quantum efficiency.

[0057] The organometallic compound according to an embodiment of the present disclosure may have a heteroleptic or homoleptic structure. Specifically, the organometallic compound according to an embodiment of the present disclosure may have a heteroleptic structure in which in the Chemical Formula 1, m is 1 and n is 2; or a heteroleptic structure where m is 2 and n is 1; or a homoleptic structure where m is 3 and n is 0.

[0058] A specific example of the compound represented by the Chemical Formula 1 of the present disclosure may include one selected from a group consisting of following compounds 1 to 370. However, the specific example of the compound represented by the Chemical Formula 1 of the present disclosure is not limited thereto as long as it meets the above definition of the Chemical Formula 1.

##STR00006## ##STR00007## ##STR00008## ##STR00009## ##STR00010## ##STR00011## ##STR00012## ##STR00013## ##STR00014## ##STR00015## ##STR00016## ##STR00017## ##STR00018## ##STR00019## ##STR00020## ##STR00021## ##STR00022## ##STR00023## ##STR00024## ##STR00025## ##STR00026## ##STR00027## ##STR00028## ##STR00029## ##STR00030## ##STR00031## ##STR00032## ##STR00033## ##STR00034## ##STR00035## ##STR00036## ##STR00037## ##STR00038## ##STR00039## ##STR00040## ##STR00041## ##STR00042## ##STR00043## ##STR00044## ##STR00045## ##STR00046## ##STR00047## ##STR00048## ##STR00049##

##STR00050## ##STR00051## ##STR00052## ##STR00053## ##STR00054## ##STR00055## ##STR00056## ##STR00057## ##STR00058## ##STR00059## ##STR00060## ##STR00061## ##STR00062## ##STR00063## ##STR00064## ##STR00065## ##STR00066## ##STR00067## ##STR00068## ##STR00069## ##STR00070## ##STR00071## ##STR00072## ##STR00073## ##STR00074## ##STR00075## ##STR00076## ##STR00077## ##STR00078## ##STR00079## ##STR00080## ##STR00081## ##STR00082## ##STR00083## ##STR00084## ##STR00085## ##STR00086## ##STR00087## ##STR00088## ##STR00089## ##STR00090## ##STR00091## ##STR00092## ##STR00093## ##STR00094## ##STR00095## ##STR00096## ##STR00097## ##STR00098## ##STR00099## ##STR00100## ##STR00101## ##STR00102## ##STR00103##

[0059] According to one implementation of the present disclosure, the organometallic compound represented by the Chemical Formula 1 of the present disclosure may be used as a red phosphorescent material or a green phosphorescent material, preferably, as the green phosphorescent material

[0060] Referring to FIG. 1 according to one implementation of the present disclosure, an organic light-emitting diode 100 may be provided which includes a first electrode 110; a second electrode 120 facing the first electrode 110; and an organic layer 130 disposed between the first electrode 110 and the second electrode 120. The organic layer 130 may include a light-emitting layer 160, and the light-emitting layer 160 may include a host material 160′ and dopants 160″. The dopants 160″ may be made of the organometallic compound represented by the Chemical Formula 1. In addition, in the organic light-emitting diode 100, the organic layer 130 disposed between the first electrode 110 and the second electrode 120 may be formed by sequentially stacking a hole injection layer 140 (HIL), a hole transport layer 150, (HTL), a light emission layer 160 (EML), an electron transport layer 170 (ETL) and an electron injection layer 180 (EIL) on the first electrode 110. The second electrode 120 may be formed on the electron injection layer 180, and a protective layer (not shown) may be formed thereon.

[0061] Further, although not shown in FIG. 1, a hole transport auxiliary layer may be further added between the hole transport layer 150 and the light-emitting layer 160. The hole transport auxiliary layer may contain a compound having good hole transport properties, and may reduce a difference between HOMO energy levels of the hole transport layer 150 and the light-emitting layer 160 so as to adjust the hole injection properties. Thus, accumulation of holes at an interface between the hole transport auxiliary layer and the light-emitting layer 160 may be reduced, thereby reducing a quenching phenomenon in which excitons disappear at the interface due to polarons. Accordingly, deterioration of the element may be reduced and the element may be stabilized, thereby improving efficiency and lifespan thereof.

[0062] The first electrode 110 may act as a positive electrode, and may be made of ITO, IZO, tin-oxide, or zinc-oxide as a conductive material having a relatively large work function value. However, the present disclosure is not limited thereto.

[0063] The second electrode 120 may act as a negative electrode, and may include Al, Mg, Ca, or Ag as a conductive material having a relatively small work function value, or an alloy or combination thereof. However, the present disclosure is not limited thereto.

[0064] The hole injection layer 140 may be positioned between the first electrode 110 and the hole transport layer 150. The hole injection layer 140 may have a function of improving interface characteristics between the first electrode 110 and the hole transport layer 150, and may be selected from a material having appropriate conductivity. The hole injection layer 140 may include one or more compounds selected from a group consisting of MTDATA, CuPc, TCTA, HATCN, TDAPB, PEDOT/PSS, and N1,N1′-([1,1′-biphenyl]-4,4′-diyl)bis(N1,N4,N4)-triphenylbenzene-1,4-diamine). Preferably, the hole injection layer 140 may include N1,N1′-([1,1′-biphenyl]-4,4′-diyl)bis(N1,N4,N4-triphenylbenzene-1,4-diamine). However, the present disclosure is limited thereto.

[0065] The hole transport layer 150 may be positioned adjacent to the light-emitting layer and between the first electrode 110 and the light-emitting layer 160. A material of the hole transport layer 150 may include a compound selected from a group consisting of TPD, NPB, CBP, N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, N-(biphenyl-4-yl)-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)biphenyl)-4-amine, etc. Preferably, the material of the hole transport layer 150 may include NPB. However, the present disclosure is not limited thereto.

[0066] According to the present disclosure, the light-emitting layer 160 may include the host material 160′ and the organometallic compound represented by the Chemical Formula 1 as dopants 160″ doped into the host in order to improve luminous efficiency of the host and the organic light-emitting diode. The light-emitting layer 160 may be formed by adding about 1 to 30% by weight of the organometallic compound, that is, the dopants 160″ of the Chemical Formula 1 of the present disclosure to the host material 160′, and may emit light of a green or red color. More preferably, the organometallic compound of the Chemical Formula 1 of the present disclosure may act as a green phosphorescent material.

[0067] In the light-emitting layer 160 of the present disclosure, the organometallic compound represented by the Chemical Formula 1 may be used as the dopant 160″, and a compound containing a carbazole group may be used as the host material 160′. For example, the host material containing the carbazole group may be one or more compounds selected from compounds of structures as shown in a following Table 1. However, the present disclosure is not limited thereto.

TABLE-US-00001 TABLE 1 Structure of host material Compound name of host material [00104] CBP (4,4-Bis(9-carbazolyl)-1,1′) [00105] 9,9′-di([1,1′-biphenyl]-3-yl)-9H,9′H-3,3′-bicarbazole [00106] 9-([1,1′-biphenyl]-4-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole [00107] 9-([1,1′:3′,1″-terphenyl]-5′-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole [00108] 9,9′-di([1,1′-biphenyl]-4-yl)-9H,9′H-3,3′-bicarbazole [00109] 9-([1,1′-biphenyl]-3-yl)-9′-([1,1′-biphenyl]-4-yl)-9H,9′H-3,3′-bicarbazole

[0068] Further, the electron transport layer 170 and the electron injection layer 180 may be sequentially stacked between the light-emitting layer 160 and the second electrode 120. A material of the electron transport layer 170 requires high electron mobility such that electrons may be stably supplied to the light-emitting layer under smooth electron transport.

[0069] For example, the material of the electron transport layer 170 may include a compound selected from a group consisting of Alq3 (tris(8-hydroxyquinolino)aluminum), Liq (8-hydroxyquinolinolatolithium), PBD (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4oxadiazole), TAZ (3-(4-biphenyl)4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, BAlq (bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium), SAlq, TPBi (2,2′,2-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), oxadiazole, triazole, phenanthroline, benzoxazole, benzthiazole, and 2-(4-(9,10-di(naphthalen-2-yl)anthracen-2-yl)phenyl)-1-phenyl-TH-benzo[d]imidazole. Preferably, the material of the electron transport layer 170 may include 2-(4-(9,10-di(naphthalen-2-yl)anthracen-2-yl)phenyl)-1-phenyl-1H-benzo[d]imidazole. However, the present disclosure is not limited thereto.

[0070] The electron injection layer 180 serves to facilitate electron injection, and a material of the electron injection layer may include a compound selected from a group consisting of Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, spiro-PBD, BAlq, SAlq, etc. However, the present disclosure is not limited thereto. Alternatively, the electron injection layer 180 may be made of a metal compound. The metal compound may include, for example, one or more selected from a group consisting of Liq, LiF, NaF, KF, RbF, CsF, FrF, BeF.sub.2, MgF.sub.2, CaF.sub.2, SrF.sub.2, BaF.sub.2 and RaF.sub.2. However, the present disclosure is not limited thereto.

[0071] The organic light-emitting diode according to the present disclosure may be embodied as a white light-emitting diode having a tandem structure. The tandem organic light-emitting diode according to an illustrative embodiment of the present disclosure may be formed in a structure in which adjacent ones of two or more light-emitting stacks are connected to each other via a charge generation layer (CGL). The organic light-emitting diode may include at least two light-emitting stacks disposed on a substrate, wherein each of the at least two light-emitting stacks includes first and second electrodes facing each other, and the light-emitting layer disposed between the first and second electrodes to emit light in a specific wavelength band. In this case, the light-emitting layer included in at least one of the plurality of light-emitting stacks may contain the organometallic compound represented by the Chemical Formula I according to the present disclosure as the dopants. Adjacent ones of the plurality of light-emitting stacks in the tandem structure may be connected to each other via the charge generation layer CGL including an N-type charge generation layer and a P-type charge generation layer.

[0072] FIG. 2 and FIG. 3 are cross-sectional views schematically showing an organic light-emitting diode in a tandem structure having two light-emitting stacks and an organic light-emitting diode in a tandem structure having three light-emitting stacks, respectively, according to some implementations of the present disclosure.

[0073] As shown in FIG. 2, an organic light-emitting diode 100 according to the present disclosure include a first electrode 110 and a second electrode 120 facing each other, and an organic layer 230 positioned between the first electrode 110 and the second electrode 120. The organic layer 230 may be positioned between the first electrode 110 and the second electrode 120 and may include a first light-emitting stack ST1 including a first light-emitting layer 261, a second light-emitting stack ST2 positioned between the first light-emitting stack ST1 and the second electrode 120 and including a second light-emitting layer 262, and the charge generation layer CGL positioned between the first and second light-emitting stacks ST1 and ST2. The charge generation layer CGL may include an N-type charge generation layer 291 and a P-type charge generation layer 292. At least one of the first light-emitting layer 261 and the second light-emitting layer 262 may contain the organometallic compound represented by the Chemical Formula I according to the present disclosure as the dopants. For example, as shown in FIG. 2, the second light-emitting layer 262 of the second light-emitting stack ST2 may contain a host material 262′, and dopants 262″ made of the organometallic compound represented by the Chemical Formula I doped therein.

[0074] As shown in FIG. 3, the organic light-emitting diode 100 according to the present disclosure include the first electrode 110 and the second electrode 120 facing each other, and an organic layer 330 positioned between the first electrode 110 and the second electrode 120. The organic layer 330 may be positioned between the first electrode 110 and the second electrode 120 and may include the first light-emitting stack ST1 including the first light-emitting layer 261, the second light-emitting stack ST2 including the second light-emitting layer 262, a third light-emitting stack ST3 including a third light-emitting layer 263, a first charge generation layer CGL1 positioned between the first and second light-emitting stacks ST1 and ST2, and a second charge generation layer CGL2 positioned between the second and third light-emitting stacks ST2 and ST3. The first charge generation layer CGL1 may include a N-type charge generation layers 291 and a P-type charge generation layer 292. The second charge generation layer CGL2 may include a N-type charge generation layers 293 and a P-type charge generation layer 294. At least one of the first light-emitting layer 261, the second light-emitting layer 262, and the third light-emitting layer 263 may contain the organometallic compound represented by the Chemical Formula I according to the present disclosure as the dopants. For example, as shown in FIG. 3, the second light-emitting layer 262 of the second light-emitting stack ST2 may contain the host material 262′, and the dopants 262″ made of the organometallic compound represented by the Chemical Formula I doped therein.

[0075] Furthermore, an organic light-emitting diode according to an embodiment of the present disclosure may include a tandem structure in which four or more light-emitting stacks and three or more charge generating layers are disposed between the first electrode and the second electrode.

[0076] The organic light-emitting diode according to the present disclosure may be used as a light-emitting element of each of an organic light-emitting display device and a lighting device. In one implementation, FIG. 4 is a cross-sectional view schematically illustrating an organic light-emitting display device including the organic light-emitting diode according to some embodiments of the present disclosure as a light-emitting element thereof.

[0077] As shown in FIG. 4, an organic light-emitting display device 3000 includes a substrate 3010, an organic light-emitting diode 4000, and an encapsulation film 3900 covering the organic light-emitting diode 4000. A driving thin-film transistor Td as a driving element, and the organic light-emitting diode 4000 connected to the driving thin-film transistor Td are positioned on the substrate 3010.

[0078] Although not shown explicitly in FIG. 4, a gate line and a data line that intersect each other to define a pixel area, a power line extending parallel to and spaced from one of the gate line and the data line, a switching thin film transistor connected to the gate line and the data line, and a storage capacitor connected to one electrode of the thin film transistor and the power line are further formed on the substrate 3010.

[0079] The driving thin-film transistor Td is connected to the switching thin film transistor, and includes a semiconductor layer 3100, a gate electrode 3300, a source electrode 3520, and a drain electrode 3540.

[0080] The semiconductor layer 3100 may be formed on the substrate 3010 and may be made of an oxide semiconductor material or polycrystalline silicon. When the semiconductor layer 3100 is made of an oxide semiconductor material, a light-shielding pattern (not shown) may be formed under the semiconductor layer 3100. The light-shielding pattern prevents light from being incident into the semiconductor layer 3100 to prevent the semiconductor layer 3010 from being deteriorated due to the light. Alternatively, the semiconductor layer 3100 may be made of polycrystalline silicon. In this case, both edges of the semiconductor layer 3100 may be doped with impurities.

[0081] The gate insulating layer 3200 made of an insulating material is formed over an entirety of a surface of the substrate 3010 and on the semiconductor layer 3100. The gate insulating layer 3200 may be made of an inorganic insulating material such as silicon oxide or silicon nitride.

[0082] The gate electrode 3300 made of a conductive material such as a metal is formed on the gate insulating layer 3200 and corresponds to a center of the semiconductor layer 3100. The gate electrode 3300 is connected to the switching thin film transistor.

[0083] The interlayer insulating layer 3400 made of an insulating material is formed over the entirety of the surface of the substrate 3010 and on the gate electrode 3300. The interlayer insulating layer 3400 may be made of an inorganic insulating material such as silicon oxide or silicon nitride, or an organic insulating material such as benzocyclobutene or photo-acryl.

[0084] The interlayer insulating layer 3400 has first and second semiconductor layer contact holes 3420 and 3440 defined therein respectively exposing both opposing sides of the semiconductor layer 3100. The first and second semiconductor layer contact holes 3420 and 3440 are respectively positioned on both opposing sides of the gate electrode 3300 and are spaced apart from the gate electrode 3300.

[0085] The source electrode 3520 and the drain electrode 3540 made of a conductive material such as metal are formed on the interlayer insulating layer 3400. The source electrode 3520 and the drain electrode 3540 are positioned around the gate electrode 3300, and are spaced apart from each other, and respectively contact both opposing sides of the semiconductor layer 3100 via the first and second semiconductor layer contact holes 3420 and 3440, respectively. The source electrode 3520 is connected to a power line (not shown).

[0086] The semiconductor layer 3100, the gate electrode 3300, the source electrode 3520, and the drain electrode 3540 constitute the driving thin-film transistor Td. The driving thin-film transistor Td has a coplanar structure in which the gate electrode 3300, the source electrode 3520, and the drain electrode 3540 are positioned on top of the semiconductor layer 3100.

[0087] Alternatively, the driving thin-film transistor Td may have an inverted staggered structure in which the gate electrode is disposed under the semiconductor layer while the source electrode and the drain electrode are disposed above the semiconductor layer. In this case, the semiconductor layer may be made of amorphous silicon. In one example, the switching thin-film transistor (not shown) may have substantially the same structure as that of the driving thin-film transistor (Td).

[0088] In one example, the organic light-emitting display device 3000 may include a color filter 3600 absorbing the light generated from the electroluminescent element (light-emitting diode) 4000. For example, the color filter 3600 may absorb red (R), green (G), blue (B), and white (W) light. In this case, red, green, and blue color filter patterns that absorb light may be formed separately in different pixel areas. Each of these color filter patterns may be disposed to overlap each organic layer 4300 of the organic light-emitting diode 4000 to emit light of a wavelength band corresponding to each color filter. Adopting the color filter 3600 may allow the organic light-emitting display device 3000 to realize full-color.

[0089] For example, when the organic light-emitting display device 3000 is of a bottom emission type, the color filter 3600 absorbing light may be positioned on a portion of the interlayer insulating layer 3400 corresponding to the organic light-emitting diode 4000. In an optional embodiment, when the organic light-emitting display device 3000 is of a top emission type, the color filter may be positioned on top of the organic light-emitting diode 4000, that is, on top of a second electrode 4200. For example, the color filter 3600 may be formed to have a thickness of 2 to 5 μm.

[0090] In one example, a protective layer 3700 having a drain contact hole 3720 defined therein exposing the drain electrode 3540 of the driving thin-film transistor Td is formed to cover the driving thin-film transistor Td.

[0091] On the protective layer 3700, each first electrode 4100 connected to the drain electrode 3540 of the driving thin-film transistor Td via the drain contact hole 3720 is formed individually in each pixel area.

[0092] The first electrode 4100 may act as a positive electrode (anode), and may be made of a conductive material having a relatively large work function value. For example, the first electrode 4100 may be made of a transparent conductive material such as ITO, IZO or ZnO.

[0093] In one example, when the organic light-emitting display device 3000 is of a top-emission type, a reflective electrode or a reflective layer may be further formed under the first electrode 4100. For example, the reflective electrode or the reflective layer may be made of one of aluminum (Al), silver (Ag), nickel (Ni), and an aluminum-palladium-copper (APC) alloy.

[0094] A bank layer 3800 covering an edge of the first electrode 4100 is formed on the protective layer 3700. The bank layer 3800 exposes a center of the first electrode 4100 corresponding to the pixel area.

[0095] An organic layer 4300 is formed on the first electrode 4100. If necessary, the organic light-emitting diode 4000 may have a tandem structure. Regarding the tandem structure, reference may be made to FIG. 2 to FIG. 4 which show some embodiments of the present disclosure, and the above descriptions thereof.

[0096] The second electrode 4200 is formed on the substrate 3010 on which the organic layer 4300 has been formed. The second electrode 4200 is disposed over the entirety of the surface of the display area and is made of a conductive material having a relatively small work function value and may be used as a negative electrode (a cathode). For example, the second electrode 4200 may be made of one of aluminum (Al), magnesium (Mg), and an aluminum-magnesium alloy (Al—Mg).

[0097] The first electrode 4100, the organic layer 4300, and the second electrode 4200 constitute the organic light-emitting diode 4000.

[0098] An encapsulation film 3900 is formed on the second electrode 4200 to prevent external moisture from penetrating into the organic light-emitting diode 4000. Although not shown explicitly in FIG. 4, the encapsulation film 3900 may have a triple-layer structure in which a first inorganic layer, an organic layer, and an inorganic layer are sequentially stacked. However, the present disclosure is not limited thereto.

[0099] Hereinafter, Synthesis Example and Present Example of the present disclosure will be described. However, following Present Example is only one example of the present disclosure. The present disclosure is not limited thereto.

Synthesis Example—Preparation of Ligand Intermediate Product

[0100] <Preparation of Ligand A-1>

##STR00110##

[0101] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-1 (10.40 g, 0.05 mol) was dissolved in 250 mL of THF, and then iodomethane (42.58 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound A-1 (18.13 g, 92%).

[0102] <Preparation of ligand B-1>

##STR00111##

[0103] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-1 (10.40 g, 0.05 mol) was dissolved in 250 mL of THF, and then 2-iodopropane (51.00 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound B-1 (19.00 g, 90%).

[0104] <Preparation of Ligand C-1>

##STR00112##

[0105] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-1 (10.40 g, 0.05 mol) was dissolved in 250 mL of THF, and then 1-iodobutane (55.21 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound C-1 (18.53 g, 85%).

[0106] <Preparation of Ligand D-1>

##STR00113##

[0107] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-2 (12.90 g, 0.05 mol) was dissolved in 250 mL of THF, and then iodomethane (42.58 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound D-1 (19.10 g, 86%).

[0108] <Preparation of Ligand E-1>

##STR00114##

[0109] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-2 (12.90 g, 0.05 mol) was dissolved in 250 mL of THF, and then 2-iodopropane (51.00 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound E-1 (21.00 g, 89%).

[0110] <Preparation of Ligand F-1>

##STR00115##

[0111] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-2 (12.90 g, 0.05 mol) was dissolved in 250 mL of THF, and then 1-iodobutane (55.21 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound F-1 (22.85 g, 94%).

[0112] <Preparation of Ligand G-1>

##STR00116##

[0113] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-3 (12.90 g, 0.05 mol) was dissolved in 250 mL of THF, and then iodomethane (42.58 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound G-1 (20.43 g, 92%).

[0114] <Preparation of Ligand H-1>

##STR00117##

[0115] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-3 (12.90 g, 0.05 mol) was dissolved in 250 mL of THF, and then 2-iodopropane (51.00 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound H-1 (21.00 g, 89%).

[0116] <Preparation of Ligand I-1>

##STR00118##

[0117] In a 500 mL round bottom flask and under a nitrogen atmosphere, SM-3 (12.90 g, 0.05 mol) was dissolved in 250 mL of THF, and then 1-iodobutane (55.21 g, 0.30 mol) was sequentially added to a reaction solution and then the reaction solution was stirred at 40° C. for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound I-1 (21.15 g, 87%).

Synthesis Example—Preparation of Ligand

[0118] <Preparation of Ligand A>

##STR00119##

[0119] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant A-1 (19.70 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound A (20.74 g, 91%), and further purification for a next reaction was not performed.

[0120] <Preparation of Ligand B>

##STR00120##

[0121] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant B-1 (21.10 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. Upon completion of the reaction thereof, the reaction solution was concentrated under reduced pressure to obtain the compound B (21.78 g, 90%), and further purification for a next reaction was not performed.

[0122] <Preparation of Ligand C>

##STR00121##

[0123] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant C-1 (21.81 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound C (23.15 g, 93%), and further purification for a next reaction was not performed.

[0124] <Preparation of Ligand D>

##STR00122##

[0125] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant D-1 (22.20 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound D (24.03 g, 95%), and further purification for a next reaction was not performed.

[0126] <Preparation of Ligand E>

##STR00123##

[0127] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant E-1 (23.61 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound E (22.70 g, 85%), and further purification for a next reaction was not performed.

[0128] <Preparation of Ligand F>

##STR00124##

[0129] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant F-1 (24.31 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. Upon completion of the reaction thereof, the reaction solution was concentrated under reduced pressure to obtain the compound F (25.75 g, 94%), and further purification for a next reaction was not performed.

[0130] <Preparation of Ligand G>

##STR00125##

[0131] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant G-1 (22.20 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound G (22.51 g, 89%), and further purification for a next reaction was not performed.

[0132] <Preparation of Ligand H>

##STR00126##

[0133] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant H-1 (23.61 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound H (24.83 g, 93%), and further purification for a next reaction was not performed.

[0134] <Preparation of Ligand I>

##STR00127##

[0135] In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant I-1 (24.31 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. Upon completion of the reaction thereof, the reaction solution was concentrated under reduced pressure to obtain the compound I (25.75 g, 94%), and further purification for a next reaction was not performed.

Synthesis Example—Preparation of Iridium Compound

[0136] <Preparation of Iridium Compound 1>

##STR00128##

[0137] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand A (1.37 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 1 (1.56 g, 72%).

[0138] <Preparation of Iridium Compound 2>

##STR00129##

[0139] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand B (1.45 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 2 (1.53 g, 68%).

[0140] <Preparation of Iridium Compound 3>

##STR00130##

[0141] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand C (1.50 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 3 (1.79 g, 78%).

[0142] <Preparation of Indium Compound 46>

##STR00131##

[0143] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand D (1.52 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 46 (1.76 g, 76%).

[0144] <Preparation of Iridium Compound 47>

##STR00132##

[0145] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand E (1.60 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 47 (1.80 g, 75%).

[0146] <Preparation of Iridium Compound 48>

##STR00133##

[0147] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand F (1.64 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 48 (1.78 g, 73%).

[0148] <Preparation of Iridium Compound 61>

##STR00134##

[0149] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand G (1.51 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 61 (1.62 g, 70%).

[0150] <Preparation of Iridium Compound 62>

##STR00135##

[0151] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand H (1.60 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 62 (1.92 g, 80%).

[0152] <Preparation of Iridium Compound 63>

##STR00136##

[0153] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand I (1.64 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 63 (2.00 g, 82%).

[0154] <Preparation of Iridium Compound 331>

##STR00137##

[0155] In a 250 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M2 (2.01 g, 1.5 mmol) and the ligand L1 (0.47 g, 3 mmol) were dissolved in toluene (100 mL) and a reaction solution was stirred under reflux for 24 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:1 to obtain the above iridium compound 331 (1.66 g, 70%).

[0156] <Preparation of Iridium Compound 332>

##STR00138##

[0157] In a 250 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M3 (2.18 g, 1.5 mmol) and the ligand L1 (0.47 g, 3 mmol) were dissolved in toluene (100 mL) and a reaction solution was stirred under reflux for 24 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:1 to obtain the above iridium compound 332 (1.60 g, 63%).

[0158] <Preparation of Iridium Compound 333>

##STR00139##

[0159] In a 250 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M4 (2.26 g, 1.5 mmol) and the ligand L1 (0.47 g, 3 mmol) were dissolved in toluene (100 mL) and a reaction solution was stirred under reflux for 24 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:1 to obtain the above iridium compound 333 (1.78 g, 68%).

[0160] <Preparation of Iridium Compound 351>

##STR00140##

[0161] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M2 (2.01 g, 1.5 mmol) and the ligand L2 (0.30 g, 3 mmol) were dissolved in a mixed solvent (2-ethoxyethanol:DMF=40 mL:40 mL) and a reaction solution was stirred under reflux for 24 hours at 135° C. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:3 to obtain the above iridium compound 351 (1.41 g, 64%).

[0162] <Preparation of Iridium Compound 352>

##STR00141##

[0163] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M3 (2.18 g, 1.5 mmol) and the ligand L2 (0.30 g, 3 mmol) were dissolved in a mixed solvent (2-ethoxyethanol:DMF=40 mL:40 mL) and a reaction solution was stirred under reflux for 24 hours at 135° C. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:3 to obtain the above iridium compound 352 (1.73 g, 73%).

[0164] <Preparation of Iridium Compound 353>

##STR00142##

[0165] In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M4 (2.26 g, 1.5 mmol) and the ligand L2 (0.30 g, 3 mmol) were dissolved in a mixed solvent (2-ethoxyethanol:DMF=40 mL:40 mL) and a reaction solution was stirred under reflux for 24 hours at 135° C. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:3 to obtain the above iridium compound 353 (1.74 g, 71%).

Present Examples

Present Example 1

[0166] A glass substrate having a thin film made of ITO (indium tin oxide) of a thickness of 1,000 Å coated thereon was washed and was subjected to ultrasonic cleaning using acetone and was dried. HI-1 (N1,N1′-([1,1′-biphenyl]-4,4′-diyl)bis(N1,N4,N4-triphenylbenzene-1,4-diamine)) of a following structure as a hole injection material of a thickness of 60 nm was formed on the prepared ITO transparent electrode via thermal vacuum deposition. NPB as a hole transport material was thermally vacuum deposited to have a thickness of 80 nm on the hole injection layer. A light-emitting layer was thermally vacuum deposited on the hole transport material. In this regard, the light-emitting layer contains CBP of a following structure as a host material and the compound 1 as the dopant. A doping concentration was 5% and a thickness of the light emission layer was 30 nm. ET-1: Liq (1:1) (30 nm) as materials for the electron transport layer and the electron injection layer was thermally vacuum deposited on the light-emitting layer. Then, 100 nm thick aluminum was deposited thereon to form a negative electrode. Thus, an organic light-emitting diode was fabricated. The materials used in above Present Example 1 are as follows.

##STR00143##

[0167] HI-1 means N1,N1′-([1,1′-biphenyl]-4,4′-diyl)bis(N1,N4,N4-triphenylbenzene-1,4-diamine).

[0168] ET-1 means 2-(4-(9,10-di(naphthalen-2-yl)anthracen-2-yl)phenyl)-1-phenyl-1H-benzo[d]imidazole.

Present Examples 2 to 9 and Comparative Examples 1 to 4

[0169] An organic light-emitting diode of each of Present Examples 2 to 9 and Comparative Examples 1 to 4 was manufactured in the same manner as in Present Example 1, except that each of compounds shown in a following Table 2 was used instead of the compound 1 as the dopant in Present Example 1.

TABLE-US-00002 TABLE 2 Maximum Luminous Operation Quantum Efficiency EQE LT95 voltage (%, relative (%, relative (%, relative Examples Dopant (V) value) value) value) Comparative Ref-1 4.26 100 100 100 Example 1 Comparative Ref-2 4.25 108 106 104 Example 2 Comparative Ref-3 4.26 110 108 106 Example 3 Comparative Ref-4 4.27 112 109 108 Example 4 Present Compound 1 4.24 129 127 124 Example 1 Present Compound 2 4.23 130 129 127 Example 2 Present Compound 3 4.22 131 130 128 Example 3 Present Compound 46 4.21 130 128 126 Example 4 Present Compound 47 4.20 131 130 127 Example 5 Present Compound 48 4.23 135 132 130 Example 6 Present Compound 61 4.24 134 133 131 Example 7 Present Compound 62 4.23 132 131 130 Example 8 Present Compound 63 4.21 133 132 131 Example 9

[0170] Structures of Ref-1 to Ref-4 as dopant materials of Comparative Examples 1 to 4 in Table 2 are as follows.

##STR00144##

Present Examples 10 to 15 and Comparative Examples 5 to 7

[0171] An organic light-emitting diode of each of Present Examples 10 to 15 and Comparative Examples 5 to 7 was manufactured in the same manner as in Present Example 1, except that each of compounds shown in a following Table 3 was used instead of the compound 1 as the dopant in Present Example 1.

TABLE-US-00003 TABLE 3 Maximum Luminous Operation Quantum Efficiency EQE LT95 voltage (%, relative (%, relative (%, relative Examples Dopant (V) value) value) value) Comparative Ref-5 4.24 100 100 100 Example 5 Comparative Ref-6 4.25 110 107 109 Example 6 Comparative Ref-7 4.26 109 108 110 Example 7 Present Compound 331 4.25 125 124 125 Example 10 Present Compound 332 4.26 123 121 121 Example 11 Present Compound 333 4.23 121 120 119 Example 12 Present Compound 351 4.21 124 122 126 Example 13 Present Compound 352 4.23 126 125 128 Example 14 Present Compound 353 4.22 124 121 125 Example 15

[0172] Structures of Ref-5 to Ref-7 as dopant materials of Comparative Examples 5 to 7 in Table 3 are as follows.

##STR00145##

Present Examples 16 to 20

[0173] An organic light-emitting diode of each of Present Examples 16 to 20 was manufactured in the same manner as in Present Example 1 except that each of compounds shown in a following Table 4 was used instead of CBP as the host in Present Example 1.

TABLE-US-00004 TABLE 4 Maximum Luminous Operation Quantum Efficiency EQE LT95 voltage (%, relative (%, relative (%, relative Examples Dopant Host (V) value) value) value) Present Compound 1 GH1 4.21 131 129 125 Example 16 Present Compound 1 GH2 4.20 132 130 127 Example 17 Present Compound 1 GH3 4.22 130 128 125 Example 18 Present Compound 1 GH4 4.23 131 128 126 Example 19 Present Compound 1 GH5 4.22 129 127 124 Example 20

[0174] Structures of GH1 to GH5 as host materials of Present Examples 16 to 20 of the Table 4 are as follows, and compound names thereof are described in the above Table 1.

##STR00146## ##STR00147##

Present Examples 21 to 25

[0175] An organic light-emitting diode of each of Present Examples 21 to 25 was manufactured in the same manner as in Present Example 4 except that each of compounds shown in a following Table 5 was used instead of CBP as the host in Present Example 4. The structures of the host materials GH1 to GH5 are the same as those described above with reference to Present Examples 16 to 20.

TABLE-US-00005 TABLE 5 Maximum Luminous Operation Quantum Efficiency EQE LT95 voltage (%, relative (%, relative (%, relative Examples Dopant Host (V) value) value) value) Present Compound 46 GH1 4.20 132 130 127 Example 21 Present Compound 46 GH2 4.19 133 131 128 Example 22 Present Compound 46 GH3 4.20 131 129 126 Example 23 Present Compound 46 GH4 4.21 132 128 128 Example 24 Present Compound 46 GH5 4.20 130 128 127 Example 25

[0176] It may be identified from the results of the above Table 2 and Table 3 that in the organic light-emitting diode in which the organometallic compound of each of Present Examples 1 to 15 which satisfies the Chemical Formula 1 according to the present disclosure is used as the dopant of the light-emitting layer of the diode, the operation voltage of the diode is lowered, the maximum luminous quantum efficiency, external quantum efficiency (EQE) and lifetime (LT95) of the diode are improved, compared to those in each of Comparative Examples 1 to 7.

[0177] It will be apparent to those skilled in the art that various modifications and variations can be made in the organometallic compound and the organic light-emitting diode including the same of the present disclosure without departing from the technical idea or scope of the disclosure. Thus, it is intended that the present disclosure cover the modifications and variations of this disclosure provided they come within the scope of the appended claims and their equivalents.