Multilayer substrate and method for manufacturing the same

Abstract

The invention provides a slip layer substrate which can reduce the thermal residual stresses between components induced by their mismatch of thermal expansion, thus greatly improve the reliability of electronic packages. The slip layer substrate comprises: a base material; a first metallization layer formed on the base material; a first diffusion barrier layer formed on the first metallization layer; a slip layer formed on the first diffusion barrier layer; a second diffusion barrier layer formed on the slip layer; and a second metallization layer formed on the second diffusion barrier layer.

Claims

1. A slip layer substrate, comprising: a base material; a first metallization layer formed on the base material; a first diffusion barrier layer formed on the first metallization layer that the first metallization layer is sandwiched between the base material and the first diffusion barrier layer; a slip layer formed on the first diffusion barrier layer that the first diffusion barrier layer is sandwiched between the slip layer and the first metallization layer, wherein the slip layer is made of malleable and ductile material and has a low mechanical strength; a second diffusion barrier layer formed on the slip layer that the slip layer is sandwiched between the second diffusion barrier layer and the first diffusion barrier layer, wherein the first diffusion barrier layer and the second diffusion barrier layer are made of cobalt; and a second metallization layer formed on the second diffusion barrier layer that the second diffusion barrier layer is sandwiched between the second metallization layer and the slip layer.

2. The slip layer substrate according to claim 1, wherein the base material is selected from the group consisting of ceramic, metal based material, and non-metal based material.

3. The slip layer substrate according to claim 1, wherein the material of the first metallization layer is selected from the group consisting of copper, aluminum, conductive pure metal, and conductive alloy that is able to establish electrical connection purpose.

4. The slip layer substrate according to claim 1, wherein the slip layer is made of material which is selected from the group consisting of gold, silver, aluminum, copper, malleable metal alloys and non-metals.

5. The slip layer substrate according to claim 1, wherein the first diffusion barrier layer is formed on the first metallization layer; the second diffusion barrier layer is formed on the slip layer; the slip layer is formed on the first diffusion barrier layer; and the second metallization layer is formed on the second diffusion barrier layer.

6. The slip layer substrate according to claim 1, wherein the material of the second metallization layer is selected from the group consisting of gold, silver, aluminum and copper.

7. A method for manufacturing slip layer substrate, comprising: providing a base material; forming a first metallization layer on the base material; forming a first diffusion barrier layer on the first metallization layer that the first metallization layer is sandwiched between the base material and the first diffusion barrier layer; forming a slip layer on the first diffusion barrier layer that the first diffusion barrier layer is sandwiched between the slip layer and the first metallization layer, wherein the slip layer is made of malleable and ductile material and has a low mechanical strength; forming a second diffusion barrier layer on the slip layer that the slip layer is sandwiched between the second diffusion barrier layer and the first diffusion barrier layer, wherein the first diffusion barrier layer and the second diffusion barrier layer are made of cobalt; and forming a second metallization layer on the second diffusion barrier layer that the second diffusion barrier layer is sandwiched between the second metallization layer and the slip layer.

8. The method for manufacturing slip layer substrate according to claim 7, wherein the base material is selected from the group consisting of ceramic, metal based material, and non-metal based material.

9. The method for manufacturing slip layer substrate according to claim 7, wherein the material of the first metallization layer is selected from the group consisting of copper, aluminum, conductive pure metal, and conductive alloy that is able to establish electrical connection purpose.

10. The method for manufacturing slip layer substrate according to claim 7, wherein the slip layer is made of material which is selected from the group consisting of gold, silver, aluminum, copper, malleable metal alloys and non-metals.

11. The method for manufacturing slip layer substrate according to claim 7, wherein the first diffusion barrier layer is formed on the first metallization layer; the second diffusion barrier layer is formed on the slip layer; the slip layer is formed on the first diffusion barrier layer; and the second metallization layer is formed on the second diffusion barrier layer.

12. The method for manufacturing slip layer substrate according to claim 7, wherein the material of the second metallization layer is selected from the group consisting of gold, silver, aluminum and copper.

13. A slip layer substrate, comprising: a base material; two first metallization layers formed on two opposite sides of the base material respectively that the base material is sandwiched between the first metallization layers; two first diffusion barrier layers formed on the two first metallization layers respectively that the base material is located between the two first diffusion barrier layers; two slip layers formed on the two first diffusion barrier layers respectively that the base material is located between the two slip layers, wherein each of the slip layers is made of malleable and ductile material and has a low mechanical strength; two second diffusion barrier layers formed on the two slip layers respectively that the base material is located between the two second diffusion barrier layers, each of the first diffusion barrier layers and the second diffusion barrier layers is made of material having a high mechanical strength; and two second metallization layers formed on the two second diffusion barrier layers respectively that the base material is located between the two second metallization layers.

14. The slip layer substrate according to claim 13, wherein each of the slip layers is made of material selected from the group consisting of gold, silver, aluminum, copper, malleable metal alloys and non-metals.

15. The slip layer substrate according to claim 13, wherein the base material is selected from the group consisting of ceramic, metal based material, and non-metal based material.

16. The slip layer substrate according to claim 13, wherein each of the first metallization layers is made of material selected from the group consisting of copper, aluminum, conductive pure metal, and conductive alloy that is able to establish electrical connection purpose.

17. The slip layer substrate according to claim 13, wherein each of the first diffusion barrier layers and the second diffusion barrier layers is made of cobalt.

18. The slip layer substrate according to claim 13, wherein each of the second metallization layers is made of material selected from the group consisting of gold, silver, aluminum and copper.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The objectives, spirits, and advantages of the preferred embodiments of the present invention will be readily understood by the accompanying drawings and detailed descriptions, wherein:

(2) FIG. 1 is a schematic cross-section view of the multilayer metallized substrate.

(3) FIG. 2 is a schematic cross-section view of partial layers of the slip layer substrate of the present invention.

(4) FIG. 3 is a schematic cross-section view of a cross section of the slip layer substrate of the present invention.

(5) FIG. 4 is sonoscan images of solder joints after 500 and 1000 temperature cycles of multilayer metallized substrate and the slip layer substrate of the present invention.

(6) FIG. 5 is a flow chart of manufacturing the slip layer substrate of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

(7) For clarity of disclosure, and not by way of limitation, the detailed description of the invention is divided into the subsections that follow.

(8) With reference to FIG. 2, this illustrates a schematic cross-section view of partial layers of the slip layer substrate of the present invention. A slip layer 17 is made of malleable and ductile materials, such as pure metals like gold, silver, aluminum or copper etc. and some malleable metal alloys and non-metals. Malleability is the property of a material where it can deform under compressive stress, while ductility refers to a material's ability to deform under tensile stress. For example, gold is the most malleable metal, and it can be beaten into extremely thin sheets. A gram of gold can be worked into a leaf covering 0.6 square meter, or into a wire 2.5 kilo meter in length. Both malleability and ductility are relative terms. In the circumstance of electronics packaging, material that sustains no less than 30% compression/elongation can be considered as malleable/ductile. A first diffusion barrier layer 16 and a second diffusion barrier layer 18 are formed on both sides (bottom and top) of the slip layer 17, respectively. The material of the first diffusion barrier layer 16 and the second diffusion barrier layer 18 is nickel, chromium, or cobalt. The mismatch of thermal expansion is accommodated by allowing dislocation and plane slippage in the slip layer 17. To prevent the slip layer 17 from being consumed as a result of diffusion between the slip layer 17 and the adjacent layers, the slip layer 17 shall be protected by two diffusion barrier layers on top and bottom. Such that a first diffusion barrier layer 16 and a second diffusion barrier layer 18 are formed on both sides (bottom and top) of the slip layer 17, respectively. The slip layer 17 is sandwiched by the first diffusion barrier layer 16 and a second diffusion barrier layer 18. The material of the first diffusion barrier layer 16 and the second diffusion barrier layer 18 is nickel, chromium, or cobalt because of their effectiveness in impeding diffusion.

(9) With reference to FIG. 3, this illustrates a schematic cross-section view of a cross section of the slip layer substrate of the present invention. The slip layer substrate is substantially consisted of a base material 14, a first metallization layer 15, a first diffusion barrier layer 16, a slip layer 17, a second diffusion barrier layer 18, and a second metallization layer 19. The first metallization layer 15 is formed on the base material 14; the first diffusion barrier layer 16 is formed on the first metallization layer 15; the slip layer 17 is formed on the first diffusion barrier layer 16; the second diffusion barrier layer 18 is formed on the slip layer 17 and the second metallization layer 19 is formed on the second diffusion barrier layer 18. The base material 14 is ceramic, metal based material, or non-metal based material. The material of the first metallization layer 15 is copper, aluminum, or any conductive pure metal or conductive alloy that can establish electrical connection purpose and the material of the first diffusion barrier layer 16 and the second diffusion barrier layer 18 is nickel, chromium, or cobalt. The first diffusion barrier layer 16 and the second diffusion barrier layer 18 prevent diffusion between the first metallization layer 15 and the slip layer 17. The material of the second metallization layer 19 is gold, silver, aluminum or copper.

(10) Unlike the gold plating layer 13 in the conventional multilayer metallized substrate, which will be consumed during soldering process, the slip layer 17 of the present invention is protected by the two diffusion barrier layers 16 and 18 because of the impeded diffusion across the two diffusion barrier layers 16 and 18. The excellent malleability and ductility of the slip layer 17 is utilized to accommodate thermal expansion mismatch thus reduces the thermal stress being transferred from the CTE non-matching heat spreading layer to the substrate base material and the electronic device attached to the second metallization layer 19.

(11) Moreover, the first diffusion barrier layer 16 is formed on the first metallization layer 15; the second diffusion barrier layer 18 is formed on the slip layer 17; the slip layer 17 is formed on the first diffusion barrier layer 16; and the second metallization layer 19 is formed on the second diffusion barrier layer 18.

(12) With reference to FIG. 4, this illustrates sonoscan images of solder joints after 500 and 1000 temperature cycles of conventional DBC substrate and the slip layer substrate of the present invention. A comparison of reliability is made on the slip layer substrate of the present invention and the conventional DBC substrate. Both the slip layer substrates of the present invention and the conventional DBC substrates are soldered onto the same copper heat spreader plate. Temperature cycling tests are then performed on the soldered substrates with temperature range from 50 C. to 150 C. As shown in the sonoscan images in FIG. 4, after 1000 temperature cycles, the slip layer substrates of the present invention show cumulated voiding of less than 30% of the attachment area, while the conventional DBC substrates show more than 60% delamination. This comparison clearly shows that the slip layer substrate of the present invention significantly delays the onset of the complete delamination of a metallized substrate hence improving structural reliability and thermal performance over the life of products.

(13) With reference to FIG. 5, this illustrates a flow chart of manufacturing the slip layer substrate of the present invention. The manufacturing flow comprises the following steps: providing a base material (step S11); forming a first metallization layer on the base material (step S12); forming a first diffusion barrier layer on the first metallization layer (step S13); forming a slip layer on the first diffusion barrier layer (step S14); forming a second diffusion barrier layer on the slip layer (step S15); and forming a second metallization layer on the second diffusion barrier layer (step S16). The base material can be ceramic, metal based material, or non-metal based material. The material of the first metallization layer is copper, aluminum, or any conductive pure metal or conductive alloy that can establish an electrical connection, and the material of the first diffusion barrier layer and the second diffusion barrier layer is nickel, chromium, or cobalt. The first diffusion barrier layer and the second diffusion barrier layer prevent diffusion between the first metallization layer and the slip layer. The slip layer is made of malleable and ductile materials, such as pure metals like gold, silver, aluminum or copper etc. and some malleable metal alloys and non-metals. The material of the second metallization layer is gold, silver, aluminum or copper.

(14) Moreover, the first diffusion barrier layer is formed on the first metallization layer; the second diffusion barrier layer is formed on the slip layer; the slip layer is formed on the first diffusion barrier layer; and the second metallization layer is formed on the second diffusion barrier layer.

(15) Although the present invention has been described in terms of specific exemplary embodiments and examples, it will be appreciated that the embodiments disclosed herein are for illustrative purposes only and various modifications and alterations might be made by those skilled in the art without departing from the spirit and scope of the invention as set forth in the following claims.