Lead-Free and Antimony-Free Solder Alloy, Solder Ball, and Solder Joint

Abstract

Provided are a lead-free and antimony-free solder alloy, a solder ball, and a solder joint that have improved shear strength obtained by grain minuteness at a bonded interface and can suppress fusion failure. The lead-free and antimony-free solder alloy having an alloy composition consisting of, by mass%, 0.1 to 4.5% of Ag, 0.20 to 0.85% of Cu, 0.2 to 5.00% of Bi, 0.005 to 0.09% of Ni, and 0.0005 to 0.0090% of Ge with the balance being Sn, and the alloy composition satisfies the following relations (1) and (2): 0.013 ≤ (Ag + Cu + Ni + Bi) x Ge ≤ 0.027 (1), Sn x Cu x Ni ≤ 5.0 (2). Ag, Cu, Ni, Bi, Ge, and Sn in the relations (1) and (2) each represent the contents (mass%) in the alloy composition.

Claims

1. A lead-free and antimony-free solder alloy having an alloy composition consisting of, by mass%, 0.1 to 4.5% of Ag, 0.20 to 0.85% of Cu, 0.2 to 5.00% of Bi, 0.005 to 0.09% of Ni, and 0.0005 to 0.0090% of Ge with the balance being Sn, wherein the alloy composition satisfies the following relations (1) and (2): $0.13\le (\text{Ag+Cu+Ni+Bi)}\times \text{Ge}\le \text{0}\text{.027}$ $\text{Sn}\times \text{Cu}\times \text{Ni}\le \text{5}\text{.0}$ wherein Ag, Cu, Ni, Bi, Ge, and Sn in the relations (1) and (2) each represent the contents (mass%) thereof in the alloy composition.

2. The lead-free and antimony-free solder alloy according to claim 1, wherein, by mass%, the alloy composition comprises 0.0005 to 0.0045% of Ge.

3. The lead-free and antimony-free solder alloy according to claim 1, wherein the alloy composition comprises one or more selected from the group consisting of Mn, Pd, P, Au, Pt, Cr, Fe, Co, V, Mo, and Nb each with an upper limit of 0.01% by mass%.

4. A solder ball comprising the lead-free and antimony-free solder alloy according to 1.

5. The solder ball according to claim 4, having an average particle diameter of 1 to 1000 .Math.m.

6. The solder ball according to claim 4, having a sphericity of 0.95 or more.

7. The solder ball according to claim 4, having a sphericity of 0.99 or more.

8. A ball grid array formed using the solder ball according to 4.

9. A solder joint comprising the lead-free and antimony-free solder alloy according to claim 1.

10. The lead-free and antimony-free solder alloy according to claim 2, wherein the alloy composition comprises one or more selected from the group consisting of Mn, Pd, P, Au, Pt, Cr, Fe, Co, V, Mo, and Nb each with an upper limit of 0.01% by mass%.

11. A solder ball comprising the lead-free and antimony-free solder alloy according to claim 2.

12. The solder ball according to claim 11, having an average particle diameter of 1 to 1000 .Math.m.

13. The solder ball according to claim 11, having a sphericity of 0.95 or more.

14. The solder ball according to claim 11, having a sphericity of 0.99 or more.

15. A ball grid array formed using the solder ball according to claim 11.

16. A solder joint comprising the lead-free and antimony-free solder alloy according to claim 2.

Description

DESCRIPTION OF EMBODIMENTS

[0032] The present invention is described in more detail below. In the present description, “%” relating to the solder alloy composition refers to “mass%” unless otherwise specified.

1. Alloy Composition

0.1 to 4.5% of Ag

[0033] Ag is an element that improves the strength of the solder alloy by precipitating minute Ag.sub.3Sn at the grain boundaries. If the Ag content is less than 0.1%, the effect of adding Ag is not sufficiently exhibited. In terms of the lower limit, the Ag content is 0.1% or more, preferably 0.5% or more, more preferably 1.0% or more, even more preferably 2.0% or more, particularly preferably 2.8% or more, and most preferably 3.0% or more. On the other hand, if the Ag content is too large, coarse Ag.sub.3Sn is precipitated, whereby the strength deteriorates. In terms of the upper limit, the Ag content is 4.5% or less, preferably 4.0% or less, more preferably 3.8% or less, even more preferably 3.5% or less, and most preferably 3.2% or less.

0.20 to 0.85% of Cu

[0034] Cu is an element that can suppress Cu leaching and enable precipitation strengthening by Cu.sub.6Sn.sub.5. If the Cu content is less than 0.20%, since the precipitated amount of Cu.sub.6Sn.sub.5 is small and a brittle SnNi compound is precipitated, the solder alloy itself becomes brittle. In terms of the lower limit, the Cu content is 0.20% or more, preferably 0.3% or more, more preferably 0.4% or more, even more preferably 0.5% or more, even yet more preferably 0.6% or more, particularly preferably 0.7% or more, and most preferably 0.75% or more. On the other hand, if the Cu content is more than 0.85%, the liquidus temperature of the solder alloy is high and the solder alloy is difficult to melt. In terms of the upper limit, the Cu content is 0.85% or less, preferably 0.80% or less.

0.2 to 5.00% of Bi

[0035] Bi is an essential element in the solder alloy according to the present invention because the optimum mechanical properties can be obtained for the form of the solder ball used as BGA by adding a predetermined amount of Bi. Bi improves mechanical properties by solid-solution strengthening, and creep resistance and wettability can also be improved. Furthermore, because Bi dissolves in Sn, the crystal structure of (Cu,Ni).sub.6Sn.sub.5 is distorted, and by coexisting with Ge, Ni leaching can be further suppressed. Bi needs to be contained at 0.2% or more, preferably 0.3% or more, more preferably 0.5% or more, further preferably 1.0% or more, particularly preferably 1.4% or more, and most preferably 1.5% or more.

[0036] On the other hand, if Bi is excessively added, the drop resistance may deteriorate. Furthermore, because the solidus temperature is lowered while the liquidus temperature hardly changes, ΔT, which is defined as a difference between a liquidus temperature and a solidus temperature, becomes large. If ΔT becomes too large, segregation will occur during solidification, leading to deterioration of mechanical properties such as mechanical strength. Therefore, in terms of the upper limit, the Bi content is 5.00% or less, preferably 4.0% or less, more preferably 3.5% or less, further preferably 3.0% or less, particularly preferably 2.5% or less, and most preferably 2.0% or less.

0.005 to 0.090% of Ni

[0037] Ni is an element that can control a liquidus temperature of the solder alloy and suppress Ni leaching similarly to Cu. If the Ni content is less than 0.005%, the effect of adding Ni is difficult to exhibit. In terms of the lower limit, the Ni content is 0.005% or more, preferably 0.01% or more, more preferably 0.02% or more, 0.03% or more, and particularly preferably 0.04% or more. On the other hand, if the Ni content is more than 0.090%, the liquidus temperature of the solder alloy is high and the solder alloy is difficult to melt. In terms of the upper limit, the Ni content is 0.090% or less, preferably 0.080% or less, more preferably 0.070% or less, even more preferably 0.068% or less, particularly preferably 0.060% or less, and most preferably 0.050% or less.

0.0005 to 0.0090% of Ge

[0038] Ge is an element that can suppress fusion failure and Ni leaching. When Ge is not contained, tin oxide is formed on the surface of the molten solder. Tin oxide is strong and hard to break. On the other hand, Ge added to the solder alloy reacts with O in the atmosphere to form a hard and brittle oxide film on the surface of the molten solder. Because this oxide film is brittle, it is easily destroyed by the convection of the molten solder itself or the external force applied from the chip at the time when the chip is placed. Therefore, the formation of the oxide film of Sn is inhibited, and the oxide film is not retained on the surface of the molten solder. Contrary to the oxide film of Sn, the fusion of the solder ball and the solder powder in the paste is promoted.

[0039] In addition, Ge is an element that can be dissolved in Ni of (Cu,Ni).sub.6Sn.sub.5 formed at the bonded interface to suppress Ni leaching. Because (Cu,Ni).sub.6Sn.sub.5 is formed at the bonded interface, the crystal structure of this compound is distorted by Ge, so that the migration of Ni in the compound is suppressed and the migration of Ni to the solder alloy is inhibited. When Ge is not contained, the crystal structure of (Cu,Ni).sub.6Sn.sub.5 is maintained in an aligned state, then Ni at the bonded interface diffuses into the solder alloy, and Ni leaching occurs.

[0040] When the Ge content is less than 0.0005%, tin oxide is produced, the crystal structure of (Cu,Ni).sub.6Sn.sub.5 is not distorted, and the above effect is difficult to be exhibited. In terms of the lower limit, the Ge content is 0.0005% or more, preferably 0.0020% or more, more preferably 0.0030% or more, and even more preferably 0.0035% or more. On the other hand, if the Ge content is too large, the liquidus temperature is high and difficult to melt. In terms of the upper limit, the Ge content is 0.0090% or less, preferably 0.0080% or less, more preferably 0.0060% or less, even more preferably 0.0050% or less, particularly preferably 0.0045% or less, and most preferably 0.0040% or less.

[0041] (6) Comprising One or More Selected from the Group Consisting of Mn, Pd, P, Au, Pt, Cr, Fe, Co, V, Mo, and Nb Each with an Upper Limit of 0.01%

[0042] The solder alloy according to the present invention can comprise one or more selected from Mn, Pd, P, Au, Pt, Cr, Fe, Co, V, Mo, and Nb, each with an upper limit of 0.01% as an optional element. These elements can improve mechanical properties.

Balance: Sn

[0043] The balance of the solder alloy according to the present invention is Sn. In addition to the above-described elements, unavoidable impurities may be contained. Even if unavoidable impurities are contained, it does not affect the above-mentioned effects. Specific examples of the unavoidable impurities include As and Cd. Furthermore, although the present invention is lead-free and antimony-free, it does not exclude the inclusion of Pb and Sb as unavoidable impurities.

[0044] If In is contained, the wettability deteriorates, and it is better not to contain In. Furthermore, Mn does not have to be contained because it is oxidized during the production of the solder alloy and it is difficult to produce the solder alloy.

Relation (1)

[0045] The present invention satisfies the following relation (1):

[00003]$0.004<\left(\text{Ag+Cu+Ni+Bi}\right)\times \text{Ge<0}\text{.032}$

In the above relation (1), Ag, Cu, Ni, Bi, and Ge each represent the contents (mass%) in the alloy composition.

[0046] If the relation (1) is satisfied, fusion failure is suppressed. In the Sn—Ag—Cu—Bi—Ni—Ge solder alloy, as described above, Ge incorporates oxygen in the atmosphere to form a hard and brittle germanium oxide. This oxide film is easily destroyed by the convection of the molten solder itself and also by the external pressure applied to the molten solder at the time when the chip is placed on the molten solder. Therefore, the formation of the oxide film of Sn is inhibited, and the oxide film is not retained on the surface of the molten solder. Contrary to the oxide film of Sn, the fusion of the solder ball and the solder powder in the paste is promoted. In addition, if the total content of Ag, Cu, Bi, and Ni is too large, ΔT increases. Furthermore, if the viscosity of the molten solder is too high, the fusion of the solder powder for the paste and the solder ball on BGA is impaired. On the other hand, if the total content of Ag, Cu, Bi, and Ni is small, fusion failure occurs because the Ge content becomes relatively large and the hard and brittle Ge oxide will be thickly formed.

[0047] In view of these, detailed research has been conducted on the fact that the fusion is attributed to the balance between the total content of Ag, Cu, Bi, and Ni and Ge content in the Sn—Ag—Cu—Bi—Ni—Ge solder alloy. As a result, it was found that fusion failure does not occur when these balances are within a predetermined range.

[0048] In terms of the lower limit, the relation (1) needs to be more than 0.004 and is preferably 0.013 or more, more preferably 0.015 or more, even more preferably 0.018 or more, even yet more preferably 0.019 or more, particularly preferably 0.020 or more, and most preferably 0.021 or more. In terms of the upper limit, the relation (1) needs to be less than 0.032 and is preferably 0.031 or less, more preferably 0.030 or less, even more preferably 0.029 or less, even yet more preferably 0.027 or less, particularly preferably 0.026 or less, and most preferably 0.025 or less, and may be 0.024 or less and 0.023 or less.

Relation (2)

[0049] The present invention satisfies the following relation (2):

[00004]$\text{Sn}\times \text{Cu}\times \text{Ni}\le \text{5}\text{.0}$

In the above relation (2), Sn, Cu, and Ni each represent the contents (mass%) in the alloy composition.

[0050] For the solder alloy according to the present invention, in the compound of Cu and Sn, the minuteness of the compound is achieved by replacing a part of Cu with Ni in order to improve bonding strength of solder joints. In addition, if these elements are mixed in a well-balanced manner, the viscosity during melting is controlled in a way that ΔT does not become too large, so that the growth of the Sn compound can be suppressed. As a result, it is presumed that in the Sn—Ag—Cu—Bi—Ni—Ge solder alloy, ΔT is controlled to make intermetallic compounds formed at a bonded interface minute by containing Sn, Cu, and Ni contents in a well-balanced manner, so that the shear strength is improved.

[0051] In terms of the upper limit, the relation (2) is 5.0 or less, preferably 4.9 or less, more preferably 4.5 or less, even more preferably 4.0 or less, even yet more preferably 3.8 or less, particularly preferably 3.7 or less, and most preferably 3.6 or less, and may be 3.3 or less and 3.2 or less. In terms of the lower limit, the relation (2) is not particularly limited, but from the viewpoint of suppressing Ni leaching and sufficiently improving shear strength, it is preferably 0.7 or more, more preferably 1.0 or more, even more preferably 1.3 or more, even yet more preferably 1.4 or more, particularly preferably 1.5 or more, and most preferably 1.6 or more, and may be 2.3 or more and 2.9 or more.

[0052] Consequently, the solder alloy according to the present invention needs to satisfy the relations (1) and (2) in order to achieve both suppression of fusion failure and improvement in shear strength. As a result thereof, Ni leaching can also be suppressed.

ΔT

[0053] It is preferable that ΔT of the solder alloy according to the present invention is within a predetermined range because the solid-liquid coexistence region is narrow, and for example, an increase in the viscosity of the molten solder can be suppressed. The range of ΔT is preferably 100° C. or less, more preferably 70° C. or less, and even more preferably 40° C. or less.

3. Solder Ball

[0054] The lead-free and antimony-free solder alloy according to the present invention is most suitable for the form of solder balls used for BGA. The sphericity of the solder ball is preferably 0.90 or more, more preferably 0.95 or more, and most preferably 0.99 or more. The sphericity is determined by various methods such as the least squares circle method (LSC method), the minimum zone circle method (MZC method), the maximum inscribed circle method (MIC method), and the minimum circumscribed circle method (MCC method). In the present invention, the sphericity of the solder ball is measured using a CNC image measuring system (Ultra Quick Vision ULTRA QV350-PRO measuring device manufactured by Mitutoyo Corporation) using the minimum zone circle method (MZC method). In the present invention, the sphericity represents a deviation from the true sphere, and for example, the sphericity is an arithmetic mean value calculated when the diameter of each of 500 balls is divided by the major axis. The closer the value of the sphericity is to the upper limit of 1.00, the closer it is to a true sphere.

[0055] The solder balls according to the present invention are used for forming bumps on electrodes and substrates of semiconductor packages such as BGA (ball grid array). The diameter of the solder ball according to the present invention is preferably in the range of 1 to 1000 .Math.m and more preferably 50 .Math.m or more to 300 .Math.m. The solder ball can be manufactured by a general solder ball manufacturing method. The diameter in the present invention means the diameter measured by Ultra Quick Vision ULTRA QV350-PRO measuring device manufactured by Mitutoyo Corporation.

4. Solder Joint

[0056] The solder joint according to the present invention is suitable for connection between an IC chip for a semiconductor package and its substrate (interposer), or for connection between the semiconductor package and a printed wiring board. Here, the term “solder joint” according to the present invention is defined as a connection part between an IC chip and a substrate, which is connected using the above-described solder alloy according to the present invention, and the connection part includes a connection for an electrode or a connection part between a die and the substrate.

5. Other

[0057] A bonding method using a solder alloy according to the present invention may be performed according to an ordinary method e.g. using a reflow method. The heating temperature may be appropriately adjusted depending on the heat resistance of the chip or the liquidus temperature of the solder alloy. About 240° C. is preferable as the heating temperature from the viewpoint of suppressing thermal damage to the chip. A melting temperature of the solder alloy for performing flow soldering may be approximately 20° C. higher than the liquidus temperature. In a case where bonding is conducted by using the solder alloy according to the present invention, the structure can be further made minuteness by considering a cooling rate during solidification. For example, the solder joint is cooled at a cooling rate of 2 to 3° C./s or higher. Other bonding conditions can be appropriately adjusted depending on the alloy composition of the solder alloy.

[0058] The solder alloy according to the present invention enables a low α-ray alloy to be produced by using a low α-ray material as a raw material therefor. When such a low α-ray-alloy is used for forming solder bumps in the periphery of memory, soft errors can be suppressed.

Examples

[0059] For the solder alloys constituted from alloy compositions as shown in Table 1, fusion failure and ΔT obtained from the liquidus temperature and the solidus temperature were evaluated as follows. The shear strength and Ni leaching were also evaluated.

Presence or Absence of Fusion Failure

[0060] The solder alloys as shown in Table 1 were verified for the presence or absence of fusion failure. A method for verifying them was such that the prepared solder alloys based on compositions of Examples and Comparative Examples were cast and rolled, and they were punched out into small piece members (each being 2 mm (length) x 2 mm (width) x 0.1 mm (thickness)). These small pieces were formed as plate materials having a predetermined dimension, which were put on a Cu plate on which organic solderability preservative (OSP) processing (water-soluble preflux processing) was performed and flux was applied. They were reflowed, and then the surface thereof was washed and stayed at an environment of a temperature of 125° C. and humidity RH of 100% RH for 24 hours. Further, the solder balls (in the case of this example, a diameter thereof is 300 .Math.m) which were prepared by using the solder alloy consisting of, by mass%, 3.0% of Ag and 0.5% of Cu with the balance being Sn (Sn-3.0Ag-0.5Cu) were stayed at an environment of a temperature of 125° C. and humidity RH of 100% RH for 24 hours similarly to the small piece members. Next, flux was applied to samples made of the solder alloys of Examples or Comparative Examples, and the predetermined number of solder balls was put thereon. In the examples, the number of solder balls was set to be nine pieces and respective 5 plate materials were prepared. Then, after reflowing was performed, the number of fusion-failed solder balls was calculated and incidence of fusion defect was determined. The term fusion failure is defined as a state in which the small pieces and the solder balls are not bonded to each other.

[0061] When the number of the fusion failed solder balls is 0 or less, it was rated as “A”; when it was more than 0 and 10 or less, it was rated as “B”; and when it was more than 10, it was rated as “D”.

ΔT (K)

[0062] Each solder alloy as shown in Tables 1 and 2 was prepared, and the melting temperature of the solder was measured. The measurement of the solidus temperature was performed according to JIS Z3198-1. The liquidus temperature was measured, instead of JIS Z3198-1, with a method with DSC which is similar to the measurement method for a solidus temperature according to JIS Z3198-1. ΔT (K), which is the difference between the measured liquidus temperature and solidus temperature, was determined. When ΔT (K) was 100 K or less, it was rated as “B”, and when it was over 100 K, it was rated as “D”.

Shear Strength

[0063] Solder balls with a diameter of 0.6 mm were prepared from solder alloy compositions as shown in Table 1. These solder balls were used for soldering to a substrate with a thickness of 1.2 mm and an electrode size of 0.5 mm in diameter (Cu—OSP).

[0064] As for the soldering conditions, a flux (manufactured by SENJU METAL INDUSTRY CO., LTD.: WF-6400) was applied onto an electrode, and soldering was performed using a reflow apparatus (manufactured by SENJU METAL INDUSTRY CO., LTD.: SNR-615) under a reflow profile with a peak temperature of 245° C. and a cooling rate of 2° C./s. The prepared sample was subjected to a shear strength test under the conditions of a shear rate of 1000 mm/s in a shear strength measuring device (manufactured by Nordson Dage: SERIES 4000HS).

Ni Leaching

[0065] A preform with a thickness of 250 .Math.m and made of alloy composition as shown in Table 1 was mounted on a Cu lead frame. Thereafter, an IC chip having a back metal on the side of a substrate bonded surface of a silicon chip of 5 mm x 5 mm x 200 .Math.m' was mounted on the solder alloy. The back metal is obtained by sequentially stacking a 0.05 .Math.m Ti layer as a barrier layer, and a 0.20 .Math.m Ni layer. The mounting was performed in such an orientation that in the IC chip having the back metal, the Ni layer was in contact with the solder alloy. A substrate with the solder alloy and the IC chip mounted thereon was heated in a reflow furnace so that the peak temperature was 240° C., then die bonding was performed.

[0066] Then, a cross section of an obtained lead frame was zoomed up by a factor of 30000 on a SEM monitor, and an average value of a film thickness of an Ni layer was calculated from arbitrary 10 locations.

[0067] The results are shown in Tables 1 and 2.

TABLE-US-00001 Alloy Composition (mass%) Relation (1) Relation (2) Fusion failure ΔT Comprehensive evaluation Sn Ag Cu Ni Ge Bi other Example 1 Bal. 3.5 0.80 0.050 0.0040 0.20 0.018 3.8 A B B Example 2 Bal. 3.5 0.80 0.060 0.0040 0.30 0.019 4.5 A B B Example 3 Bal. 4.0 0.80 0.050 0.0030 4.00 0.027 3.6 A B B Example 4 Bal. 3.0 0.80 0.020 0.0030 3.00 0.020 1.4 A B B Example 5 Bal. 3.0 0.70 0.060 0.0035 0.50 0.015 4.0 A B B Example 6 Bal. 3.2 0.50 0.050 0.0045 0.50 0.019 2.3 A B B Example 7 Bal. 2.8 0.70 0.050 0.0045 1.00 0.020 3.3 A B B Example 8 Bal. 3.5 0.80 0.050 0.0040 1.00 0.021 3.7 A B B Example 9 Bal. 3.5 0.80 0.050 0.0040 1.50 0.023 3.7 A B B Example 10 Bal. 1.0 0.70 0.040 0.0045 1.50 0.015 2.7 A B B Reference Example 11 Bal. 1.0 0.50 0.068 0.0080 2.00 0.029 3.2 B B B Example 12 Bal. 3.8 0.70 0.050 0.0040 2.00 0.026 3.2 A B B Reference Example 13 Bal. 2.0 0.50 0.030 0.0080 1.40 0.031 1.4 B B B Example 14 Bal. 0.5 0.80 0.010 0.0060 3.00 0.026 0.7 B B B Example 15 Bal. 3.0 0.80 0.020 0.0040 3.00 0.027 1.4 A B B Example 16 Bal. 3.2 0.75 0.040 0.0035 3.00 0.024 2.7 A B B Reference Example 17 Bal. 4.0 0.50 0.050 0.0040 3.00 0.030 2.3 A B B Example 18 Bal. 3.5 0.80 0.050 0.0030 4.00 0.025 3.6 A B B Example 19 Bal. 2.0 0.60 0.030 0.0020 4.00 0.013 1.6 A B B Example 20 Bal. 3.0 0.50 0.060 0.0030 4.00 0.023 2.7 A B B

TABLE-US-00002 Alloy Composition (mass%) Relation (1) Relation (2) Fusion failure ΔT Comprehensive evaluation Sn Ag Cu Ni Ge Bi other Reference Example 21 Bal. 1.0 0.80 0.068 0.0045 5.00 0.031 5.0 A B B Reference Example 22 Bal. 3.4 0.50 0.030 0.0035 5.00 0.031 1.3 A B B Reference Example 23 Bal. 2.0 0.75 0.070 0.0080 1.00 0.031 5.0 A B B Reference Example 24 Bal. 2.0 0.75 0.070 0.0060 2.00 0.029 4.9 A B B Reference Example 25 Bal. 2.0 0.75 0.070 0.0050 3.00 0.029 4.9 A B B Reference Example 26 Bal. 3.5 0.80 0.050 0.0045 2.00 0.029 3.7 A B B Reference Example 27 Bal. 3.5 0.80 0.050 0.0045 2.50 0.031 3.7 A B B Reference Example 28 Bal. 3.5 0.80 0.050 0.0040 3.00 0.029 3.7 A B B Reference Example 29 Bal. 3.5 0.80 0.050 0.0040 3.50 0.031 3.6 A B B Reference Example 30 Bal. 3.5 0.80 0.050 0.0050 1.50 0.029 3.7 A B B Reference Example 31 Bal. 3.8 0.70 0.050 0.0040 3.00 0.030 3.2 A B B Reference Example 32 Bal. 3.0 0.80 0.020 0.0045 3.00 0.031 1.4 A B B Example 33 Bal. 3.5 0.80 0.050 0.0030 4.00 Mn:0.01 0.025 3.6 A B B Example 34 Bal. 3.5 0.80 0.050 0.0030 4.00 Pd:0.01 0.025 3.6 A B B Example 35 Bal. 3.5 0.80 0.050 0.0030 4.00 P:0.01 0.025 3.6 A B B Example 36 Bal. 3.5 0.80 0.050 0.0030 4.00 Au:0.01 0.025 3.6 A B B Example 37 Bal. 3.5 0.80 0.050 0.0030 4.00 Pt:0.01 0.025 3.6 A B B Example 38 Bal. 3.5 0.80 0.050 0.0030 4.00 Cr:0.01 0.025 3.6 A B B Example 39 Bal. 3.5 0.80 0.050 0.0030 4.00 Fe:0.01 0.025 3.6 A B B Example 40 Bal. 3.5 0.80 0.050 0.0030 4.00 Co:0.01 0.025 3.6 A B B Example 41 Bal. 3.5 0.80 0.050 0.0030 4.00 V:0.01 0.025 3.6 A B B Example 42 Bal. 3.5 0.80 0.050 0.0030 4.00 Mo:0.01 0.025 3.6 A B B Example 43 Bal. 3.5 0.80 0.050 0.0030 4.00 Nb:0.01 0.025 3.6 A B B

TABLE-US-00003 Alloy Composition (mass%) Relation (1) Relation (2) Fusion failure ΔT Comprehensive evaluation Sn Ag Cu Ni Ge Bi other Comparative Example 1 Bal. 3.0 0.50 0.030 0.0150 0.053 1.4 D B D Comparative Example 2 Bal. 3.8 0.60 0.120 0.0060 4.00 0.051 6.5 D D D Comparative Example 3 Bal. 4.0 0.75 0.150 0.0300 5.00 0.297 10.1 D D D Comparative Example 4 Bal. 3.0 0.70 0.050 0.0060 1.50 0.032 3.3 D B D Comparative Example 5 Bal. 1.0 0.70 0.015 0.0000 4.00 0.000 0.9 D B D Comparative Example 6 Bal. 3.0 0.50 0.060 0.0050 3.00 0.033 2.8 D B D Comparative Example 7 Bal. 3.5 0.50 0.100 0.1500 0.615 4.7 D B D Comparative Example 8 Bal. 2.0 0.50 0.100 0.0500 2.00 0.230 4.7 D B D Comparative Example 9 Bal. 3.5 0.50 0.100 0.0500 0.205 4.7 D B D Comparative Example 10 Bal. 4.5 0.85 0.005 0.0005 2.00 0.004 0.3 D B D Comparative Example 11 Bal. 0.1 0.20 0.050 0.0005 2.00 0.001 0.9 D B D The underline indicates that it does not fall within the scope of the present invention.

[0068] As shown in Table 1, according to Examples 1 to 43 (excluding Reference Examples 11, 13, 17, and 21 to 32), it was revealed that fusion failure does not occur and ΔT is in a predetermined range because the content of each constituent element and the relations (1) and (2) were satisfied for all the alloy compositions. In addition, it was confirmed that the solder joints obtained using the solder alloys of Examples showed higher values of shear strength than any of Comparative Examples. Further, it was confirmed that Ni leaching was also suppressed.

[0069] On the other hand, according to Comparative Examples 1 to 11, the relation (1) was not satisfied, whereby many fusion-failed solder balls were detected. In addition, the Sn-2.0Ag-0.75Cu-0.070Ni-0.0080Ge solder alloy (the numerical values are expressed in mass%; the balance is Sn and unavoidable impurities) had inferior shear strength of solder joints because they satisfied the relation (1) but not relation (2).