Multi-phased MEMS plate lowering and lifting system and method
09550665 ยท 2017-01-24
Assignee
Inventors
Cpc classification
B81B3/0013
PERFORMING OPERATIONS; TRANSPORTING
International classification
B81B3/00
PERFORMING OPERATIONS; TRANSPORTING
H02N1/00
ELECTRICITY
Abstract
A MEMS device includes a bottom plate structure supporting a conductive electrode. A flexible conductive top plate movably supported by a flexure is affixed to a small peripheral portion of the top plate that is aligned with the electrode. Drive circuitry applies a high level of a drive voltage signal between the electrode and the top plate to produce an attracting electrostatic force between the top plate and the electrode sufficient to overcome the flexure and draw the top plate against the electrode. The drive circuitry later applies a low level of the drive voltage signal to remove the electrostatic force and allow the flexure to peel the peripheral portion away from the electrode. Additional drive voltage signals may be applied to additional electrodes to draw additional peripheral portions of the top plate against the additional electrodes and successively removed to allow peripheral portions of the top plate to be sequentially peeled away from the electrodes.
Claims
1. A MEMS (micro-electromechanical system) device comprising: a bottom plate structure supporting conductive electrodes, including at least first, second and third electrodes; a conductive top plate supported by spring structures affixed to peripheral portions of the top plate, wherein the top plate is generally aligned parallel with the first, second and third electrodes; and electrode drive circuitry for: applying a first level of a drive voltage signal between the top plate and each of the first, second and third electrodes, to produce an attractive electrostatic force between the top plate and each of the first, second and third electrodes, sufficient to flex the spring structures and draw the top plate against each of the first, second and third electrodes; and sequentially applying a second level of the drive voltage signal between the top plate and successive ones of the first, second and third electrodes, to sequentially remove the attractive electrostatic force between the top plate and successive ones of the first, second and third electrodes sufficient to allow the spring structures to sequentially peel the peripheral portions away from the first, second and third electrodes.
2. The MEMS device of claim 1 wherein each of the spring structures includes a respective flexure.
3. The MEMS device of claim 1 comprising a conductive varactor plate supported by the bottom plate structure, the conductive varactor plate and the top plate forming an adjustable capacitor.
4. The MEMS device of claim 1 wherein stiction forces cause the top plate to tend to stick to the first, second and third electrodes, and wherein restoring forces produced by the spring structures are sufficient to break the stiction forces between the top plate and the first, second and third electrodes as the attractive electrostatic forces are sequentially removed.
5. The MEMS device of claim 1 wherein sequentially applying the second level of the drive voltage signal includes: abruptly transitioning the drive voltage signal from the first level to the second level between the top plate and successive ones of the first second and third electrodes.
6. The MEMS device of claim 1 wherein each of the spring structures has: a respective first portion affixed to a corresponding peripheral portion of the top plate; and a respective second portion affixed to a corresponding support.
7. The MEMS device of claim 5 wherein the transitioning is timed in accordance with a resonance property of the top plate.
8. The MEMS device of claim 1 wherein the conductive electrodes are composed of titanium-aluminum.
9. The MEMS device of claim 1 wherein the top plate is composed of titanium-aluminum.
10. The MEMS device of claim 2 wherein the flexures are composed of titanium-aluminum.
11. The MEMS device of claim 3 wherein the varactor plate is composed of titanium-aluminum.
12. The MEMS device of claim 1 wherein the peripheral portions include at least three corners of the top plate.
13. The MEMS device of claim 12 wherein the three corners of the top plate are respectively aligned with the first, second and third electrodes.
14. The MEMS device of claim 13 wherein the spring structures include at least three spring structures respectively affixed to the three corners of the top plate.
15. A method for operating a MEMS (micro-electromechanical system) device, the method comprising: applying a first level of a drive voltage signal between a conductive top plate and conductive electrodes, including at least first, second and third electrodes, to produce an attractive electrostatic force between the top plate and each of the first, second and third electrodes, sufficient to flex spring structures affixed to peripheral portions of the top plate and draw the top plate against each of the first, second and third electrodes; wherein the conductive electrodes are supported by a bottom plate structure, the top plate is supported by the spring structures, and the top plate is generally aligned parallel with the first, second and third electrodes; and sequentially applying a second level of the drive voltage signal between the top plate and successive ones of the first, second and third electrodes, to sequentially remove the attractive electrostatic force between the top plate and successive ones of the first, second and third electrodes, sufficient to allow the spring structures to sequentially peel the peripheral portions away from the first, second and third electrodes.
16. The method of claim 15 wherein stiction forces cause the top plate to tend to stick to the first, second and third electrodes, and wherein restoring forces produced by the spring structures are sufficient to break the stiction forces between the top plate and the first, second and third electrodes as the attractive electrostatic forces are sequentially removed.
17. The method of claim 15 wherein sequentially applying the second level of the drive voltage signal includes: abruptly transitioning the drive voltage signal from the first level to the second level between the top plate and successive ones of the first, second and third electrodes, timed in accordance with a resonance property of the top plate.
18. The method of claim 15 comprising: supporting a conductive varactor plate on the bottom plate structure, the conductive varactor plate and the top plate forming an adjustable capacitor.
19. A MEMS (micro-electromechanical system) device comprising: a bottom plate structure supporting conductive electrodes, including at least first, second, third and fourth electrodes; a conductive top plate supported by spring structures affixed to peripheral portions of the top plate, wherein the top plate is generally aligned parallel with the first, second, third and fourth electrodes; and electrode drive circuitry for: applying a first level of a drive voltage signal between the top plate and each of the first, second, third and fourth electrodes, to produce an attractive electrostatic force between the top plate and each of the first, second, third and fourth electrodes, sufficient to flex the spring structures and draw the top plate against each of the first, second, third and fourth electrodes; and sequentially applying a second level of the drive voltage signal between the top plate and successive ones of the first, second, third and fourth electrodes, to sequentially remove the attractive electrostatic force between the top plate and successive ones of the first, second, third and fourth electrodes, sufficient to allow the spring structures to sequentially peel the peripheral portions away from the first, second, third and fourth electrodes.
20. The MEMS device of claim 19 wherein the peripheral portions include at least four corners of the top plate.
21. The MEMS device of claim 20 wherein the four corners of the top plate are respectively aligned with the first, second, third and fourth electrodes.
22. The MEMS device of claim 21 wherein the spring structures include at least four spring structures respectively affixed to the four corners of the top plate.
23. The MEMS device of claim 19 wherein stiction forces cause the top plate to tend to stick to the first, second, third and fourth electrodes, and wherein restoring forces produced by the spring structures are sufficient to break the stiction forces between the top plate and the first, second, third and fourth electrodes as the attractive electrostatic forces are sequentially removed.
24. The MEMS device of claim 19 wherein sequentially applying the second level of the drive voltage signal includes: abruptly transitioning the drive voltage signal from the first level to the second level between the top plate and successive ones of the first, second, third and fourth electrodes, timed in accordance with a resonance property of the top plate.
25. The MEMS device of claim 19 wherein each of the spring structures has: a respective first portion affixed to a corresponding peripheral portion of the top plate; and a respective second portion affixed to a corresponding support.
26. The MEMS device of claim 19 comprising a conductive varactor plate supported by the bottom plate structure, the conductive varactor plate and the top plate forming an adjustable capacitor.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
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(5)
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(8)
(9)
(10) During operation, sequential or successive electrode voltages V.sub.ELECTRODE1, V.sub.ELECTRODE2, V.sub.ELECTRODE3, and V.sub.ELECTRODE4 shown in the timing diagram of
(11) It should also be noted that bottom plate 14 in
(12) Top plate 18, flexures 20-1, 20-2, 20-3, and 24-4, and electrodes 16-1, 16-2, 16-3, and 16-4, all could be composed titanium-aluminum material, as could varactor plate 22 of subsequently described
(13) Typically, a MEMS device is fabricated on a MEMS wafer, and associated CMOS circuitry is fabricated on a traditional silicon wafer, and the two are bonded together with the required electrical connection points between them. However, it would be possible to provide CMOS circuitry on the same substrate as a MEMS device.
(14) Preliminary implementations of the described embodiments of the invention, including the generalized MEMS device 12-1 of
(15) After the above-mentioned stiction has been achieved, it must to be overcome by the upward force of the restoring spring elements or flexure elements 20-1, 20-2, 20-3, and 20-4 so as to overcome or break the stiction forces between the bottom surface of conductive upper plate 18 and the upper surfaces of electrodes 16-1, 16-2, 16-3, and 16-4.
(16) The conductive metal plate 18 is quite flexible, so the four electrode drive waveform voltages V.sub.ELECTRODE1, V.sub.ELECTRODE2, V.sub.ELECTRODE3, and V.sub.ELECTRODE4 are applied sequentially to the 4 drive electrodes 16-1, 16-2, 16-3, and 16-4, respectively. The voltage V.sub.TOPPLATE applied via conductor 42 top plate 18 can be a reference voltage, such as ground or zero volts. For example, at the instant of the falling edge of V.sub.ELECTRODE1 on electrode 16-1, the corresponding corner of top plate 18 will be pulled or peeled up by flexure element 20-1 while the remaining underside corners of top plate 18 remain stuck to the remaining bottom plate electrodes 16-2, 3, 4 until the instants at which the waveforms of V.sub.ELECTRODE2, V.sub.ELECTRODE3, and V.sub.ELECTRODE4, respectively, fall from approximately 30 volts to approximately zero volts.
(17) The stiction-breaking process therefore occurs progressively around the periphery of top plate 18, with much less maximum upward force being applied by flexure elements 20-1, 2, 3, 4 to top plate 18 than would be required if the upward lifting forces of all four flexure elements were to be simultaneously applied to top plate 18 as required by the prior art MEMS devices. In contrast, the phased timing of the falling edges of electrode drive voltages V.sub.ELECTRODE1, V.sub.ELECTRODE2, V.sub.ELECTRODE3, and V.sub.ELECTRODE4 as shown in
(18) The timing of the four falling edges of electrode drive voltages V.sub.ELECTRODE1, V.sub.ELECTRODE2, V.sub.ELECTRODE3 and V.sub.ELECTRODE4 (i.e., the timing of reducing electrode drive voltages V.sub.ELECTRODE1, V.sub.ELECTRODE2, V.sub.ELECTRODE3 and V.sub.ELECTRODE4 from a high voltage level to a low voltage level) can be optimized with respect to a natural frequency or time constant of top plate 18 in accordance with a resonant wave in the periphery of top plate 18 as it is pulled away from the stiction between it and the underlying drive electrodes in accordance with the resonance of top plate 18. This can achieve optimum times for occurrences of the falling edges of V.sub.ELECTRODE1, V.sub.ELECTRODE2, V.sub.ELECTRODE3, and V.sub.ELECTRODE4. Using the foregoing peripheral edge lifting process for top plate 18 can substantially decrease the amount of time required to break the stiction between top plate 18 and the corresponding underlying drive electrode 16-1, 16-2, 16-3, or 16-4 and then lift top plate 18 to its highest position.
(19) Characterizing the time constant or wave propagation properties of flexible top plate 18 may be accomplished by fabricating a suitable number of MEMS structures generally as shown in
(20) The above mentioned timing parameter would be the amount of time between each electrode drive voltage undergoing a transition from an active or ON level to an inactive or OFF level and the next corresponding transition of the next electrode drive voltage. For example, one timing parameter value could be the time interval required between the falling edge of the V.sub.ELECTRODE1 waveform in
(21) The testing/characterizing structure should provide a range of flexure element forces in order to generate worst-case variations of the stiction forces within the foregoing range. The amount of stiction, once characterized, will be within a predetermined range. The characterization information can, in effect, be built into into a microcontroller (e.g., microcontroller 29 in subsequently described
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(23) When the present count value in digital counter 32 reaches the programmed value in count decoder 34-1, count decoder 34-1 then generates a signal on conductor 36-1 which is connected to an input of a FET (field effect transistor) gate control circuit 38-1. FET gate control circuit 38-1 provides control signals to an output driver circuit 40-1 which includes a P-channel pull-up transistor MP1 and an N-channel pull-down transistor MN1. FET gate control circuit 38-1 provides separate control signals to the gates of transistors MP1 and MN1. The source of transistor MP1 is connected to VBias, its drain connected to the drain of N-channel pull-down transistor MN1, the source of which is connected to ground. The common drains of transistors MP1 and MN1 are connected to a conductor on which V.sub.ELECTRODE1 is generated. Similarly, when the count in digital counter 32 reaches the preset or programmed value in count decoder 34-2, then count decoder 34-1 generates a signal on conductor 36-2 as an input to FET gate control circuit 38-2, which provides control signals to the gates of a P-channel pull-up transistor MP2 and a N-channel pull-down transistor MN2 in an output driver circuit 40-2 which has essentially the same structure as output drive circuit 40-1. The electrode drive signals V.sub.ELECTRODE3 and V.sub.ELECTRODE4 are generated similarly.
(24) The CLEAR signal, when held at an active level, keeps digital counter 32 cleared and forces all four of electrode voltage signals V.sub.ELECTRODE1, V.sub.ELECTRODE2, V.sub.ELECTRODE3, and V.sub.ELECTRODE4 to be at an ON level of 30 to 40 volts, thereby causing top plate 18 to land. Switching CLEAR to an inactive level near zero volts allows digital counter 32 to start counting CLK pulses. The required phased timing is generated by the programmed or preset count decoders 34-1, 34-2, 34-3, and 34-4 and controls the times at which the subsequent edges or transitions of electrode drive voltages V.sub.ELECTRODE1, V.sub.ELECTRODE2, V.sub.ELECTRODE3 and V.sub.ELECTRODE4 occur. This in turn causes the corner regions of top plate 18 to be successively peeled away from electrodes 16-1, 16-2, 16-3, and 16-4. The ENABLE signal allows the electrode voltage generation circuitry to be off when not needed, for example in order to save power.
(25)
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(27) The use of four separate phased electrode drive signals as described, wherein the voltage on each drive electrode is sharply decreased (in the manner of a step function) with a timing offset that corresponds to a mechanical time constant of the top plate 18 causes one corner or edge portion of the flexible top plate 18 to be pulled or peeled away from the underlying drive electrode before adjacent portions of top plate 18 are peeled away from their underlying drive electrodes. This reduces the maximum initial force required to first break all of the stiction and then lift top plate 18 upward in the embodiments of the invention shown in
(28) A main advantage of the described embodiments of the invention is that they reduce the stiction and RF electrostatic forces (i.e., RF electrostatic forces caused by an average effective DC voltage created by an applied RF signal) tending to hold top plate 18 down against the underlying drive electrodes 16-1, 16-2, 16-3, and 16-4. Since the periphery of top plate 18 can be peeled off corner by corner, the total stiction force (i.e., the sum of all of the electrode stiction forces) does not need to be overcome all at once. Instead, each of flexures 20-1, 20-2, 20-3, and 20-4 needs to exert only a relatively small upward force on its corresponding corner portion of top plate 18. Therefore, the required total amount of stiction force is, in effect, spread out over time, thereby reducing the maximum instantaneous force needed to break the stiction, completely release top plate 18, and lift it away from all of drive electrodes 16-1, 16-2, 16-3, and 16-4. The described embodiments of the invention accomplish this without significantly affecting other MEMS parameters, such as actuator size, die area, top plate pull-down voltage magnitude, etc. Also, the characteristics of the MEMS device should not be affected much by manufacturing process variability.
(29) While the invention has been described with reference to several particular embodiments thereof, those skilled in the art will be able to make various modifications to the described embodiments of the invention without departing from its true spirit and scope. It is intended that all elements or steps which are insubstantially different from those recited in the claims but perform substantially the same functions, respectively, in substantially the same way to achieve the same result as what is claimed are within the scope of the invention. For example, the described peeling of top plate 18 could be accomplished with only two electrodes, one for each end of top plate 18 if it is very long and narrow. As another example, non-rectangular or curvilinear configurations of top plate 18 could be utilized. Also, a software algorithm for simulating the operation of the described microcontroller circuitry including digital counter 32 and count decoders 34-1, 34-2, 34-3, and 34-4, could be readily provided in any other suitable microprocessor or microcontroller.