METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE

Abstract

A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).

Claims

1. Method for producing a plurality of optoelectronic semiconductor devices, having the steps: a) providing an auxiliary carrier; b) providing a plurality of semiconductor chips wherein each of the semiconductor chips comprises a carrier body and a semiconductor body arranged on a top of the carrier body; c) mounting the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced from one another in a lateral direction and wherein the semiconductor bodies face the auxiliary carrier when viewed from the carrier body; d) forming a scattering layer at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a package body composite, which is arranged at least in places between the carrier bodies of adjacent semiconductor chips, wherein the tops of the carrier bodies are at a smaller distance from the auxiliary carrier than is the package body composite; f) removing the auxiliary carrier; and g) singulating the package body composite into a plurality of optoelectronic semiconductor devices, wherein each semiconductor device comprises at least one semiconductor chip, a part of the scattering layer and a part of the package body composite as package body.

2. Method according to claim 1, wherein a vertical distance between the tops of the carrier bodies and the package body composite is greater than 5 m.

3. Method according to claim 1, in which each of the semiconductor chips provided in step b) comprises a sacrificial layer, which is arranged on the top of the carrier body and covers a side of the semiconductor body remote from the carrier body, and wherein each of the sacrificial layers is removed prior to step g).

4. Method according to claim 3, in which the sacrificial layers each have a thickness of at least 20 m.

5. Method according to claim 1, in which a conversion layer is formed after step f) and each of the semiconductor devices singulated in step g) comprises a part of the conversion layer.

6. Method according to claim 5, in which the conversion layer is formed by spray coating.

7. Method according to one claim 1, in which after step f) a plurality of contacting elements is formed, which are each connected electrically conductively with at least one part of the semiconductor bodies and which project beyond the scattering layer in a vertical direction away from the carrier bodies.

8. Method according to claim 1, in which the semiconductor chips are covered over in step e) and the package body composite PG) is subsequently thinned, such that the carrier bodies are exposed in places.

9. Optoelectronic semiconductor device, wherein the semiconductor device comprises a semiconductor chip provided for generating and/or receiving radiation with a semiconductor body arranged on a top of a carrier body; the semiconductor device comprises a package body which surrounds the carrier body of the semiconductor chip in places in a lateral direction, wherein the top of the carrier body is arranged in front of the package body when viewed in a vertical direction away from the semiconductor body; a scattering layer which completely surrounds the semiconductor body in a lateral direction is arranged on the package body.

10. Optoelectronic semiconductor device according to claim 9, wherein a vertical distance between the top of the carrier body and the package body is greater than 5 m.

11. Optoelectronic semiconductor device according to claim 9, wherein side faces of the package body are not covered by the scattering layer.

12. Optoelectronic semiconductor device according claim 9, wherein the scattering layer projects beyond the semiconductor body by at least 20 m in a vertical direction away from the package body.

13. Optoelectronic semiconductor device according to claim 9, which comprises a conversion layer, wherein the scattering layer surrounds the conversion layer in a lateral direction at least in places.

14. Optoelectronic semiconductor device wherein the semiconductor device comprises a semiconductor chip provided for generating and/or receiving radiation with a semiconductor body arranged on a top of a carrier body; the semiconductor device comprises a package body which surrounds the carrier body of the semiconductor chip in places in a lateral direction, wherein the top of the carrier body is arranged in front of the package body when viewed in a vertical direction away from the semiconductor body; a scattering layer which completely surrounds the semiconductor body in a lateral direction is arranged on the package body; and the semiconductor device is produced according to claim 1.

15. Method for producing a plurality of optoelectronic semiconductor devices, having the steps: a) providing an auxiliary carrier; b) providing a plurality of semiconductor chips, wherein each of the semiconductor chips comprises a carrier body and a semiconductor body arranged on a top of the carrier body; c) mounting the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced from one another in a lateral direction and wherein the semiconductor bodies face the auxiliary carrier when viewed from the carrier body; d) forming a scattering layer at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a package body composite, which is arranged at least in places between the carrier bodies of adjacent semiconductor chips, wherein the tops of the carrier bodies are at a smaller distance from the auxiliary carrier than is the package body composite; f) removing the auxiliary carrier; and g) singulating the package body composite into a plurality of optoelectronic semiconductor devices, wherein each semiconductor device comprises at least one semiconductor chip, a part of the scattering layer and a part of the package body composite as package body, wherein the package body is configured to be at least partially or completely absorbing.

16. Optoelectronic semiconductor device according to claim 9, wherein the package body is configured to be at least partially or completely absorbing.

Description

[0046] In the figures:

[0047] FIGS. 1 to 12 show an exemplary embodiment of a method for producing optoelectronic semiconductor devices on the basis of intermediate steps shown in each case in schematic sectional view; and

[0048] FIG. 13 shows an exemplary embodiment of an optoelectronic semiconductor device.

[0049] FIGS. 1 to 12 show an exemplary embodiment of a method for producing a plurality of optoelectronic semiconductor devices. As shown in FIG. 1, first of all a carrier composite 2 is provided, on which are arranged a plurality of semiconductor bodies 4 and of contacts 6 connected electrically therewith. More precisely, the contacts 6 are connected with a reflective layer not shown in FIG. 1, which is arranged between the carrier composite 2 and the semiconductor bodies 4.

[0050] As shown in FIG. 2, a large-area sacrificial layer 8, which may consist for example of a photoresist and have a thickness of at least 20 m, is subsequently applied.

[0051] In the method step shown in FIG. 3, the carrier composite 2 is singulated into a plurality of semiconductor chips 10, which in particular are configured to be thin-film semiconductor chips. Each of the semiconductor chips 10 provided in this way comprises a carrier body 12, a semiconductor body 4 arranged on a top of the carrier body 12, a contact 6 and a sacrificial layer 14.

[0052] In the method step illustrated in FIG. 4, the plurality of singulated semiconductor chips 10 are mounted on an auxiliary carrier 16. In this case, the semiconductor chips 10 are arranged in such a way on the auxiliary carrier 16 that the semiconductor bodies 4 face the auxiliary carrier 16 when viewed from the carrier bodies 12. A self-adhesive foil is for example suitable for the auxiliary carrier 16. Alternatively, the semiconductor chips 10 may also be mounted by means of a temporary adhesive. The semiconductor chips 10 are arranged in the manner of a matrix and are spaced from each other in a lateral direction, i.e. in a direction parallel to the main plane of extension of the auxiliary carrier 16.

[0053] The description below relates to radiation-emitting semiconductor devices, by way of example. The semiconductor chips 10 are for example luminescent diode semiconductor chips, for instance light-emitting diode semiconductor chips. In contrast thereto, the semiconductor devices 10 may however also be provided for receiving radiation and for example comprise a semiconductor chip configured as a photodiode.

[0054] In the method step shown in FIG. 5, a scattering layer 18, which for example has a silicone matrix in which scattering particles of titanium dioxide are embedded, is applied to the side of the auxiliary carrier 16 on which the semiconductor chips 10 are mounted. The scattering layer 18 here covers regions of the auxiliary carrier 16 which lie between the semiconductor chips 10. Moreover, the thickness of the scattering layer 18 is selected such that it completely surrounds the semiconductor bodies 4 in a lateral direction. This does not mean that the scattering layer 18 directly adjoins the semiconductor bodies 4. For example, the contacts 6 are arranged between the semiconductor bodies 4 and the scattering layer 18. However, a sub-region of the scattering layer 18 is arranged in every lateral direction when viewed from the semiconductor bodies 4. The scattering layer 18 here has a greater thickness than the plurality of sacrificial layers 14, for example a thickness of more than 50 m.

[0055] In the subsequent method step shown in FIG. 6, a package body composite 20 is produced by compression molding, which composite is arranged on the scattering layer 18 and fills in regions between the carrier bodies 12 of adjacent semiconductor chips 10 at least in places. The tops 22 of the carrier bodies 12 are here at a smaller distance from the auxiliary carrier 16 than is the package body composite 20.

[0056] In the subsequent method step shown in FIG. 7, the package body composite 20 is thinned from the side remote from the auxiliary carrier 16, for example by means of a mechanical method such as grinding, such that the backs 24 of the carrier bodies 12 are exposed.

[0057] In the method step shown in FIG. 8, the auxiliary carrier 16 is removed by delamination. Moreover, the sacrificial layers 14 are removed for example by application of a solvent, such that only the scattering layer 18 remains above the semiconductor bodies 4, said scattering layer 18 projecting beyond the semiconductor bodies 4 in a vertical direction away from the package body composite 20 and surrounding the semiconductor bodies 4 in the manner of a frame.

[0058] In the method step illustrated in FIG. 9, contacting elements 26 in the form of bumps are formed, which are each arranged on the contacts 6 and thus produce an electrically conductive connection with at least one part of the semiconductor bodies 4. The contacting elements 26 here project beyond the scattering layer 18 in a vertical direction away from the carrier body 12. In this way, in the finished devices an advantageous configuration of the contact fingers provided for contacting is achieved, said contact fingers being capable of extending in a substantially planar manner, since the contacting elements 26 may also be contacted across the scattering layer 18 from a lateral direction.

[0059] In the method step illustrated in FIG. 10, spray coating is used to form a conversion layer 28, which covers the scattering layer 18, the contacting elements 26 and the semiconductor bodies 4.

[0060] In preparation for planarization, a transparent coating 30 is applied, which may for example consist of silicone (see FIG. 11). In the subsequent method step illustrated in FIG. 12, the transparent coating 30 is planarized by means of a grinding process, wherein the contacting elements 26 are also exposed, such that simple electrical contacting of the semiconductor bodies 4 may proceed through the planarization layer 30. If the contacting elements are dispensed with, for example by applying contact tracks which cover over the scattering layer (see above), the contact to the semiconductor body 4 must be exposed in some other way. Such measures are generally known to a person skilled in the art.

[0061] For singulation into semiconductor devices 100, the package body composite and the scattering layer 18 are severed along singulation lines 32. This may for example proceed mechanically, for instance by means of sawing or punching, chemically, for example by means of etching, and/or by means of coherent radiation, for instance by laser ablation. Each semiconductor device 100 comprises a carrier body 12, a semiconductor body 4, a part of the scattering layer 18 and a part of the package body composite 20 as package body.

[0062] FIG. 13 shows an exemplary embodiment of an optoelectronic semiconductor device 100, which comprises a semiconductor chip 10 with a semiconductor body 4 arranged on a top 22 of a conductively configured carrier body 12. Furthermore, the semiconductor device 100 comprises a package body 34 which surrounds the carrier body 12 of the semiconductor chip in places in a lateral direction. The top 22 of the carrier body 12 is, when viewed from the semiconductor body 4 in a vertical direction V, arranged in front of the package body 34, in particular in front of a top 38 of the package body 34.

[0063] Furthermore, a scattering layer 36 is arranged on the package body 34 which completely surrounds the semiconductor body 4 in a lateral direction.

[0064] A vertical distance d between the top 22 of the carrier body and the package body 34, in particular a top 38 of the package body, is greater than 5 m, preferably greater than 10 m. It is moreover preferable for it to be smaller than 50 m, particularly preferably smaller than 25 m.

[0065] Side faces 40 of the package body 34 are not covered by the scattering layer 36. Furthermore, the scattering layer 36 projects beyond the semiconductor body 4 by at least 20 m in the vertical direction V away from the package body.

[0066] The semiconductor body 4 comprises a semiconductor layer sequence with an active region 42 provided for generating and/or receiving radiation which is arranged between a first semiconductor layer 44 and a second semiconductor layer 46.

[0067] A contacting element 26 is connected via a contact 6 with a reflective layer 48, which is arranged between the carrier body 12 and the semiconductor body 4 and is electrically conductively connected with the second semiconductor layer 46.

[0068] Moreover, at least one recess 50 (preferably a plurality of recesses) is provided, which extends through the reflective layer 48, the second semiconductor layer 46 and the active region 42 into the first semiconductor layer 44 and is at least partly filled with electrically conductive material. The carrier body 12 is connected electrically conductively through the recess 50 with the first semiconductor layer 44.

[0069] By applying an electrical voltage between the contacting element 26 and the carrier body 12, charge carriers may be injected into the active region 42 from opposing directions and there recombine with the emission of radiation.

[0070] A conversion layer 128 is arranged on the semiconductor body 4, which layer is surrounded laterally by the scattering layer 36 and is configured to convert primary radiation with a first wavelength from the blue region of the spectrum generated in the semiconductor body 4 into secondary radiation with a second wavelength from the yellow region of the spectrum. In this way, mixed light which appears white to the human eye is generated.

[0071] The invention is not limited by the description given with reference to the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the claims, even if this feature or this combination is not itself explicitly indicated in the claims or the exemplary embodiments.