Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency

Abstract

A back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5×10.sup.18 atoms/cm.sup.3 are disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum.

Claims

1. A method for manufacturing a solar cell, comprising: forming a p-type region having a p-conductive type on a first main surface of a crystal silicon substrate by performing vapor-phase diffusion using boron bromide in a state where two substrates are superimposed or by performing heat diffusion at a temperature in a range of 900° C. to 1000° C. after a boron compound is applied on the substrate; forming an n-type region which has an n-conductive type and in which a maximum concentration of additive impurities that are diffused into the crystal silicon substrate for providing the n-conductive type in a substrate depth direction is equal to or higher than 5×10.sup.18 atoms/cm.sup.3, on the first main surface by performing vapor-phase diffusion at a temperature in a range of 800 to 980° C. using phosphorous oxychloride in a state where two substrates are superimposed or in a state where a diffusion barrier is formed on a side of a second main surface of the crystal silicon substrate, the second main surface being a surface opposite to the first main surface, wherein the n-type region is formed after the p-type region is formed; forming a first passivation film so as to cover the p-type region and the n-type region; forming a silicon nitride film as a reflective coat on an entirety of a surface of the first passivation film; forming a second passivation film on the second main surface so as to cover the second main surface; forming a positive electrode in contact with a surface of the p-type region; and forming a negative electrode in contact with a surface of the n-type region, wherein each of the first passivation film and the second passivation film is an aluminum oxide film, a film thickness of the reflective coat is in a range of 80 to 250 nm, a maximum concentration of additive impurity in the p-type region in the substrate depth direction is between 5×10.sup.18 atoms/cm.sup.3 and 5×10.sup.20 atoms/cm.sup.3, forming the positive electrode and forming the negative electrode comprises: a sub-step of applying Ag paste as conductive paste on the first passivation film or the reflective coat; and a sub-step of performing heat treatment on the crystal silicon substrate at a temperature of 700° C. or more and 890° C. or less for 1 second or more and 10 minutes or less, and the solar cell is a back surface electrode type solar cell.

2. The method according to claim 1, further comprising: forming an antireflective coat on the second passivation film.

3. The method according to claim 1, wherein a surface of the reflective coat directly contacts the surface of the first passivation film.

4. The method according to claim 1, wherein the reflective coat is entirely formed by a chemical vapor deposition method, a sputtering method, or a vacuum deposition method.

5. The method according to claim 1, wherein a conversion efficiency of the solar cell is equal to or higher than 22.0%.

6. The method according to claim 1, wherein an area occupied by the p-type region is larger than an area occupied by the n-type region on the first main surface.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a cross-sectional schematic diagram illustrating an embodiment of a back surface electrode type solar cell according to the present invention;

(2) FIG. 2 is a cross-sectional schematic diagram illustrating another embodiment of the back surface electrode type solar cell according to the present invention;

(3) FIG. 3 is a cross-sectional schematic diagram illustrating still another embodiment of the back surface electrode type solar cell according to the present invention;

(4) FIG. 4 is a cross-sectional schematic diagram illustrating still another embodiment of the back surface electrode type solar cell according to the present embodiment;

(5) FIG. 5 is a process flowchart illustrating an example of a method for manufacturing the back surface electrode type solar cell according to the present invention;

(6) FIG. 6 is a diagram illustrating an example of concentration distribution of impurities in a substrate depth direction.

(7) FIG. 7 is a schematic diagram illustrating a back surface structure of the back surface electrode type solar cell according to the present invention;

(8) FIG. 8 is an overview diagram illustrating an example of a photovoltaic module according to the present invention;

(9) FIG. 9 is a schematic diagram of a photovoltaic power generation system according to the present invention; and

(10) FIG. 10 is a cross-sectional schematic diagram of a typical back surface electrode type solar cell.

DESCRIPTION OF EMBODIMENTS

(11) As described above, in recent years, there has been a challenge for easily obtaining a high passivation effect in a back surface electrode type solar cell. The present inventors have studied hard a measure for obtaining such a high passivation effect and achieved the present invention.

(12) The present invention will be described in detail below with reference to the drawings, but the present invention is not limited thereto.

(13) Embodiments of the solar cell of the present invention will be specifically described below using FIG. 1. The solar cell of the present invention is a back surface electrode type solar cell 100 in which a p-type region 102 having a p-conductive type and an n-type region 103 which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate depth direction is equal, to or higher than 5×10.sup.18 atoms/cm.sup.3 are disposed on a first main surface (back surface) of a crystal silicon substrate 101, a first passivation film 104 is disposed so as to cover the p-type region 102 and the n-type region 103, and a second passivation film 105 is disposed on a second main surface which is a surface opposite to the first main surface, so as to cover the second main surface, and the first passivation film 104 and the second passivation film 105 are formed with a compound containing aluminum oxide. A positive electrode 106 and a negative electrode 107 are respectively disposed on the p-type region 102 and the n-type region 103.

(14) The first passivation film 104 and the second passivation film 105 formed with the compound containing aluminum oxide provides a high passivation effect on both the first and the second main surfaces, and thus enables the solar cell to have high photoelectric conversion efficiency. Further, this solar cell is inexpensive because it can be easily manufactured.

(15) In the solar cell, it is preferable that at least part of the second main surface has the same conductive type and conductivity as a conductive type and conductivity in a bulk portion of the crystal silicon substrate 101. If at least part of the second main surface has the same conductive type and conductivity as the conductive type and the conductivity in the bulk of the substrate, it is not necessary to provide a diffusion layer (e.g., an FSF layer), or the like, on the second main surface, so that it is possible to provide an inexpensive solar cell with a simple structure.

(16) Further embodiments of the present invention will be described with reference to FIG. 2 to FIG. 4. In FIG. 2 to FIG. 4, the same reference numerals are assigned to the same components as those of the solar cell in FIG. 1.

(17) As illustrated in FIG. 2, it is preferable that, in a solar cell 200 of the present invention, an antireflective coat 108 is further disposed on the second passivation film 105. The antireflective coat 108 disposed on the second passivation film 105 can suppress reflection on the light receiving surface, so that it is possible to provide a solar cell with higher photoelectric conversion efficiency.

(18) Further, as illustrated in FIG. 3, it is preferable that, in a solar cell 300 of the present invention, a reflective coat 109 is further disposed on the first passivation film 104. The reflective coat 109 disposed on the first passivation film 104 can promote reflection on the back surface, so that it is possible to provide a solar cell with higher photoelectric conversion efficiency.

(19) Further, as illustrated in FIG. 4, a solar cell 400 of the present invention can be configured such that the antireflective coat 108 is disposed on the second passivation film 105 while the reflective coat 109 is disposed on the first passivation film 104. By employing such a configuration, it is possible to provide a solar cell with further higher photoelectric conversion efficiency.

(20) Further, it is preferable that the antireflective coat 108 and the reflective coat 109 contain at least one of silicon oxide, magnesium fluoride, silicon nitride, tin oxide and titanium oxide. Such a reflective coat and an antireflective coat are preferable as the reflective coat and the antireflective coat of the back surface electrode type solar cell, and it is possible to provide a solar cell with more favorable characteristics.

(21) Further, it is preferable that, in the solar cell of any aspect of FIG. 1 to FIG. 4, an area occupied by the p-type region 102 is larger than an area occupied by the n-type region 103 on the first main surface. The passivation effect of aluminum oxide is greater in the p-type region than in the n-type region. Thus, if the area occupied by the p-type region is larger, it is possible to provide a solar cell with higher photoelectric conversion efficiency.

(22) A method for manufacturing solar cell of the present invention will be now described. The method for manufacturing solar cell of the present invention is a manufacturing method of a back surface electrode type solar cell including forming a p-type region having a p-conductive type on a first main surface of a crystal silicon substrate, forming an n-type region having an n-conductive type on the first main surface, forming a first passivation film so as to cover the p-type region and the n-type region, forming a second passivation film on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, forming a positive electrode in contact with a surface of the p-type region, and forming a negative electrode in contact with a surface of the n-type region, the first passivation film and the second passivation film being formed with a compound containing aluminum oxide.

(23) An example of the method for manufacturing the solar cell (aspect in FIG. 1) of the present invention will be described below with reference to FIG. 5, while the present invention is not limited thereto.

(24) The substrate 101 in FIG. 5(a) is, for example, a p-conductive type or an n-conductive type of crystal silicon having resistivity of 0.1 to 10 Ω.Math.cm. While not illustrated, it is preferable that a roughness structure (texture) is formed on the surface of the substrate for optical confinement. The roughness structure can be obtained by immersing the substrate 101 in an acid or alkali solution for a predetermined period. As the acid solution, typically, a mixed acid solution of nitrohydrofluoric acid, acetic acid, phosphoric acid, sulfuric acid, water, or the like, is used. When the substrate 101 is immersed into this solution, minute grooves on the surface which gets rough upon processing of the substrate are preferentially etched, and thereby the roughness structure is formed. As the alkali solution, a potassium hydroxide aqueous solution, a sodium hydroxide aqueous solution or an aqueous solution of tetramethylammonium hydroxide may be used. Because the alkali etching progresses by forming Si—OH bond, its etching speed depends on crystal plane orientation, providing a roughness structure where a surface having low etching speed is exposed.

(25) A non-light receiving surface of the substrate 101 does not necessarily require a roughness structure. The surface would be rather flattened to reduce a surface area, as an effect of reducing carrier recombination loss could be expected. In this case, spin etching using chemical containing nitrohydrofluoric acid or an in-line type one side cleaning apparatus can be utilized.

(26) It is preferable that, after the roughness structure is formed, the substrate is cleaned with an acid aqueous solution of hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, or the like, or a mixed solution of these. In terms of cost and characteristics, it is preferable to clean the substrate in hydrochloric acid. To improve cleanliness, the substrate may be cleaned in a hydrochloric acid solution in which hydrogen peroxide of 0.5 to 5% is mixed and heated to 60 to 90° C.

(27) Then, as illustrated in FIG. 5(b), the p-type region 102 is formed on one surface (the first main surface) of the substrate 101. While a diffusion source containing group III element can be used to form the p-type region, in terms of electric characteristics and simplicity of the apparatus, it is preferable to perform vapor-phase diffusion at 900 to 1000° C. using, for example, boron bromide. In the solar cell of the present invention, it is necessary to form the p-type region only on the back surface. To achieve this, it is preferable to add a twist of performing diffusion in a state where two substrates are superimposed or forming a diffusion barrier such as silicon nitride on the light receiving surface side so that boron is not diffused on the light receiving surface. Further, it is also possible to form the p-type region 102 by performing heat diffusion at 900° C. to 1000° C. after a boron compound is applied on the substrate 101 and dried, instead of vapor-phase diffusion. According to this method, it is possible to relatively easily suppress boron diffusion to a non-applied surface.

(28) A maximum value of additive impurity concentration in the p-type region 102 in a substrate depth direction is preferably between 5×10.sup.18 atoms/cm.sup.3 and 5×10.sup.20 atoms/cm.sup.3, and, more preferably, between 8×10.sup.18 atoms/cm.sup.3 and 5×10.sup.19 atoms/cm.sup.3 approximately. If the concentration is lower than 5×10.sup.18 atoms/cm.sup.3, contact resistance between the substrate 101 and the electrode becomes large; and if the concentration exceeds 5×10.sup.20 atoms/cm.sup.3, a defect in a p+ region and recombination of charge carriers by Auger recombination are significantly caused, and output of the solar cell degrades.

(29) Then, as illustrated in FIG. 5(c), a diffusion barrier 510 is formed on the p-type region 102. As the diffusion barrier, a silicon nitride film or a silicon oxide film which can be obtained through a chemical vapor deposition method or a physical vapor deposition method can be preferably used. Although depending on a film manufacturing method, the film is preferably formed with a thickness of appropriately 50 to 400 nm. A silicon oxide film obtained through heat treatment may be used instead of them. In this case, the substrate 101 is subjected to heat treatment in an oxide or water vapor atmosphere at 700 to 1100° C. to grow silicon oxide 20 to 200 nm.

(30) Subsequently, as illustrated in FIG. 5(d), the diffusion barrier 510 at a portion where the n-type region is to be formed is partially removed to form an opening portion 511 so as to expose the p-type region 102. The diffusion barrier 510 can be removed by, for example, screen printing etching paste at a desired portion and performing heat treatment at 100 to 400° C. Further, it is also possible to use laser ablation whose process is simpler.

(31) While optimal design is desired for an opening area at this time depending on a conductive type of the substrate 101, typically, an area of a high concentration layer which becomes an emitter is proportional to characteristics of the solar cell. While aluminum oxide used in the present invention can be also applied in the n-type region, a higher effect can be provided in the p-type region than in the n-type region. Given this property, in the present invention, a higher effect can be expected in the back surface electrode type solar cell using an n-type substrate.

(32) Then, as illustrated in FIG. 5(e), the n-type region 103 is formed in the opening portion 511 of the diffusion barrier. In this manner, the n-type region having the n-conductive type is formed on the first main surface of the substrate 101. While the n-type region 103 can be formed with a diffusion source containing group V element, in terms of electric characteristics and simplicity of the apparatus, it is preferable to perform vapor-phase diffusion at 800 to 980° C. using, for example, phosphorous oxychloride. In the solar cell of the present invention, it is necessary to form the n-type region 103 only on the back surface (the first main surface). To achieve this, it is preferable to add a twist of performing diffusion in a state where two substrates are superimposed or forming a diffusion barrier (not illustrated) such as silicon nitride on the light receiving surface side so that phosphorus is not diffused on the light receiving surface. Further, it is also possible to form the n-type region 103 by performing heat diffusion at 800 to 980° C. after a phosphorous compound is applied on the substrate and dried, other than by performing vapor-phase diffusion. According to this method, it is possible to relatively easily suppress phosphorus diffusion to a non-applied surface.

(33) Phosphorus diffusion may be also performed after the p-type region 102 exposed at the opening portion 511 of the diffusion barrier (for example, an oxide film) is removed by etching, as an alternative way to the above-described method. In this case, for example, by immersing the substrate 101 in a sodium hydroxide aqueous solution or a potassium hydroxide aqueous solution, only an exposed portion of the p-type region 102 can be removed by the oxide film formed on the surface functioning as a mask.

(34) A maximum value of impurity concentration of the n-type region 103 in a substrate depth direction is preferably equal to or higher than 5×10.sup.18 atoms/cm.sup.3 in terms of relationship with an electrical field effect of an aluminum oxide film which will be described below.

(35) Passivation ability by the electrical field effect is determined according to fixed charge density of aluminum oxide and carrier density on the surface of the substrate. If there is negative fixed charges on a surface of the n-type region in which additive impurity concentration is lower than 5×10.sup.18 atoms/cm.sup.3, holes of minority carriers collect on the surface and conditions largely shift to inversion conditions. By this means, a ratio of carrier recombination on the surface of the n-type region decreases. However, on the other hand, minority carriers recombined at the electrode increases, which results in degradation of characteristics of the solar cell. While an electrical field effect decreases in a region where additive impurity concentration is equal to or higher than 5×10.sup.18 atoms/cm.sup.3, because aluminum oxide has high chemical termination capability on the surface of the crystal silicon, a passivation effect can be expected. This effect is considered to be caused by a silicon oxide film composed of several atomic layers that are formed at an interface between silicon and aluminum oxide upon formation of an aluminum oxide film.

(36) On the other hand, if additive impurity concentration exceeds approximately 1×10.sup.21 atoms/cm.sup.3, there is a possibility that output of the solar cell may degrade as a result of a defect in the n-type region and recombination of charge carriers by Auger recombination becoming obvious. Therefore, it is preferable that additive impurity concentration is equal to or lower than 1×10.sup.21 atoms/cm.

(37) The above-described impurity concentration in the p-type region 102 and the n-type region 103 can be easily measured using a secondary ion mass spectrometry. FIG. 6 illustrates an example of boron concentration distribution ((a) in FIG. 6) and phosphorus concentration distribution ((b) in FIG. 6) measured using this method. While a shape of concentration distribution varies with additive impurities and diffusion conditions, a value indicated with an arrow in FIG. 6 is maximum concentration of the additive impurities in the substrate depth direction.

(38) A pattern for forming the p-type region and the n-type region may be, for example, a pattern in which the p-type region 102 and the n-type region 103 are linearly adjacent as illustrated in FIG. 7(a). Further, as illustrated in FIG. 7(b), an island-shaped n-type region 703 may be formed in the p-type region 702, or as illustrated in FIG. 7(c), an island-shaped p-type region 712 may be formed in the n-type region 713.

(39) The order of forming the p-type region and forming the n-type region may be reverse.

(40) After phosphorus diffusion, boron glass, a diffusion barrier and phosphorus glass formed on the diffusion surface are removed with hydrofluoric acid or the like. To maintain cleanliness of the surface of the substrate 101, more preferably, the substrate may be cleaned with a solution in which ammonia water or an aqueous solution of tetramethylammonium hydroxide is mixed with hydrogen peroxide of 0.5 to 5% and is heated at 60 to 90° C. In addition, the substrate may be cleaned with hydrochloric acid, sulfuric acid, nitric acid or a mixed solution of these, or a solution in which these are mixed with hydrogen peroxide of 0.5 to 5% and is heated at 60 to 90° C. Further, it is preferable to remove an oxide film with an aqueous solution of hydrofluoric acid in the last stage of cleaning.

(41) Then, as illustrated in FIG. 5(f), a first passivation film 104 is formed on the p-type region 102 and the n-type region 103, and, further, a second passivation film 105 is formed on an opposite surface (the second main surface). Both passivation films are formed with a compound containing aluminum oxide. As a method for forming an aluminum oxide film, a chemical vapor deposition method such as plasma CVD, atmospheric pressure CVD and low pressure CVD is mainly used other than an atomic layer deposition method. In these methods, tetramethylaluminum is used as a precursor, and, in the case where a carrier gas is introduced to the precursor, hydrogen, argon or nitrogen is typically used. As an oxidant of aluminum, oxygen, carbon dioxide, nitrous oxide, water, ozone, or the like, can be used.

(42) Further, a vacuum deposition method or a sputtering method may be used to form a passivation film containing aluminum oxide. Alternatively, the passivation film may be formed by a sol-gel method using a compound such as aluminum alkoxide, or the like.

(43) The first passivation film 104 and the second passivation film 105 may be formed on both surfaces at the same time, or the films may be separately formed on each surface. In the case where the films are formed at the same time, an atomic layer deposition method is suitable. In this case, the substrate 101 is provided in a reaction chamber kept at approximately 100 to 350° C. so that the both surfaces are exposed to a reaction gas, and an oxidation gas and a precursor are alternately introduced and gas-exchanged, whereby an aluminum oxide film is formed.

(44) Compositions of the first passivation film 104 and the second passivation film 105 may differ. To form such films for each surface, a conventional flat plate plasma CVD, a sputtering method, a sol-gel method, or the like, is suitable.

(45) The thickness of the first passivation film 104 and the second passivation film 105 is preferably equal to or greater than 0.5 nm, more preferably, from 3 nm to 30 nm (between 3 nm and 30 nm). By making the film thickness of the first and second passivation films fall within this film thickness range, it is possible to realize coverage of the passivation film with respect to the substrate 101 and a passivation effect at the same time.

(46) Further, in the case where the first passivation film 104 also has a function as a reflective coat for reflecting light reaching the back surface of the solar cell to the substrate again, the film thickness is preferably between 70 nm and 200 nm, more preferably between 80 nm and 100 nm. If the film thickness is between 70 nm and 200 nm, a function as the reflective coat can be favorably exerted.

(47) To improve light reflection of the back surface of the substrate, as illustrated in FIG. 3, a reflective coat 109 formed with a compound other than aluminum oxide may be further formed on the first passivation film 104. As the reflective coat 109, silicon oxide, magnesium fluoride, silicon nitride, tin oxide, titanium oxide, or the like, can be used. These films may be formed using a chemical vapor deposition method, a sputtering method, a vacuum deposition method, or the like. While the film thickness of the reflective coat 109 depends on the film thickness of the first passivation film 104 and refractive index of the reflective coat 109, the film thickness is preferably approximately 80 to 250 nm.

(48) Meanwhile, in the case where the second passivation film 105 also has a function as an antireflective coat, the film thickness is preferably between 70 nm and 200 nm, more preferably between 80 nm and 150 nm. If the film thickness of the second passivation film 105 is between 70 nm and 200 nm, the function as a reflective coat can be favorably exerted.

(49) Further, to improve an antireflective effect of the light receiving surface, as illustrated in FIG. 2, an antireflective coat 108 formed with a compound other than aluminum oxide may be further formed on the second passivation film 105. As the antireflective coat 108, silicon oxide, magnesium fluoride, silicon nitride, tin oxide, titanium oxide, or the like, can be used. These films may be formed using a chemical vapor deposition method, a sputtering method, a vacuum deposition method, or the like. While the film thickness of the antireflective coat 108 depends on the film thickness of the second passivation film 105 and refractive index of the antireflective coat, the film thickness is preferably approximately 50 to 120 nm.

(50) Further, as illustrated in FIG. 4, it is also possible to form a laminate of the passivation film 104 and the reflective coat 109 on the back surface of the solar cell and form a laminate of the passivation film 105 and the antireflective coat 108 on the light receiving surface by combining features of FIG. 2 and FIG. 3.

(51) Depending on a manufacturing method, it is known that a passivation effect of the aluminum oxide film is improved by subjected the film to heat treatment at 300 to 600° C. In the case where a film forming temperature is lower than this temperature range, it is preferable that, after the aluminum oxide film is formed, the film is subjected to heat treatment for 5 to 20 minutes in an inert gas atmosphere in the above-described temperature range or in a hydrogen-mixed nitrogen atmosphere having a hydrogen concentration of 2 to 10%, before the antireflective coat or the reflective coat is laminated.

(52) Then, as illustrated in FIG. 5(g), a positive electrode 106 is formed on the p-type region 102, and a negative electrode 107 is formed on the n-type region 103. Forming the positive electrode 106 and forming the negative electrode 107 may include a sub-step of applying conductive paste on the first passivation film 104 or the reflective coat 109, and a sub-step of performing heat treatment on the crystal silicon substrate 101, to which the conductive paste is applied, at 700° C. or more and 890° C. or less for 1 second or more and 10 minutes or less. An electrode forming method is preferably, but is not particularly limited to, screen printing or dispenser formation using the conductive paste, in terms of productivity. Specifically, the positive electrode 106 and the negative electrode 107 can be formed by applying an Ag paste in which Ag powder and glass flit are mixed with an organic binder on the p-type region 102 and the n-type region 103 through the passivation film 104, drying the Ag paste, and firing the substrate for between 1 second and 30 minutes, preferably between 1 second and 10 minutes at a temperature approximately between 700° C. and 890° C. Through this heat treatment, the passivation film 104 or the passivation film 104 and the reflective coat is/are eroded by the Ag paste, whereby the electrode electrically is brought into electrical contact with the silicon.

(53) Further, it is also possible to apply plating to form the electrode. In this case, because it is necessary to expose a portion where the electrode is to be formed on the surface of the substrate, it is possible to remove the passivation film 104 at the portion through, for example, laser ablation.

(54) By electrically connecting a plurality of the above-described solar cells of the present invention, a photovoltaic module can be obtained. FIG. 8 is an overview diagram illustrating an example of a configuration of a non-light receiving surface of the photovoltaic module 16 constituted by electrically connecting the solar cells of the present invention. The positive electrode 26 of the solar cell is electrically connected to the negative electrode 27 of the adjacent solar cell through a tab 12, and the required number of solar cells 11 to achieve predetermined output are connected. The connected solar cells 11 are sealed with cover glass, a filler, and, further, a backsheet while not illustrated. As the cover glass, soda-lime glass is widely used. Further, as the filler, ethylene vinyl acetate, polyolefin, silicone, or the like, is used. As the backsheet, a functional film using polyethylene terephthalate is typically used. In addition, the positive electrode 26 of one solar cell is connected to a positive electrode terminal 13 of the photovoltaic module 16, and the negative electrode 27 of another solar cell is connected to a negative electrode terminal 14 of the photovoltaic module 16.

(55) FIG. 9 illustrates a basic configuration of a photovoltaic power generation system in which the photovoltaic modules 16 of the present invention are connected. The photovoltaic power generation system of the present invention is constituted by electrically connecting a plurality of the above-described photovoltaic modules 16 of the present invention. As illustrated in FIG. 9, the plurality of photovoltaic modules 16 are connected in series through wiring 15 and supply generated power to an external load circuit 18 via an inverter 17. While not illustrated in FIG. 9, the system may further include a secondary cell which stores the generated power.

EXAMPLE

(56) The present invention will be more specifically described below using examples and comparative examples, but the present invention is not limited to these.

Example 1

(57) In a phosphorus-doped <100> n-type as-cut silicon substrate of 150 mm square, having a thickness of 200 μm and having specific resistance of 1 Ω.Math.cm, after a damage layer was removed with a hot concentrated potassium hydroxide aqueous solution, the substrate was immersed in a 5% potassium hydroxide aqueous solution at 80° C. for 20 minutes to form texture in a random pyramid shape, and, continuously, cleaned in a mixed solution of hydrochloric acid and hydrogen peroxide.

(58) Subsequently, a mixture of a boron compound and a binder was spin coated on the back surface of the substrate, and boron was diffused through heat treatment at 1000° C. for 30 minutes to form a p-type region. Then, continuously, oxidizing heat treatment was performed at 1000° C. for 2 hours to form an oxide film (silicon oxide film). After the oxide film was formed, the oxide film at a portion where an n-type region was to be formed on the back surface of the substrate was removed in a line shape using laser radiation with a wavelength of 532 nm.

(59) Then, the substrates were loaded on a quartz board such that light receiving surfaces of a pair of two substrates faced each other, and heat treatment was performed at 820° C. for 30 minutes by using phosphorous oxychloride to form an n-type region. After this process, peak impurity concentration of the p-type region and the n-type region in a substrate depth direction was measured by using arbitrarily extracted samples through a secondary ion mass spectrometry. As a result, the peak concentration was 5×10.sup.19 atoms/cm.sup.3 in the p-type region, and 3×10.sup.19 atoms/cm.sup.3 in the n-type region.

(60) After the substrate was immersed in a 10% HF aqueous solution to remove a glass layer and an oxide film, the substrate was cleaned by being sequentially immersed in a mixed solution of hydrochloric acid water and hydrogen peroxide water at 80° C., and a 2% HF aqueous solution, and the substrate was rinsed with pure water and then dried.

(61) Aluminum oxide having a film thickness of 100 nm was formed on the light receiving surface of the cleaned substrate using an atomic layer deposition method, and further, aluminum oxide having a film thickness of 10 nm was formed on the back side. Then, the substrate was subjected to heat treatment at 450° C. for 15 minutes in a nitrogen atmosphere. On the back surface of the substrate, a silicon nitride film having a film thickness of 90 nm was further formed using plasma CVD.

(62) A solar cell was obtained by applying Ag paste on the above-described p-type region and n-type region through screen printing, and curing the Ag paste through heat treatment at 800° C. for 3 seconds. Finally, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

Example 2

(63) On the back surface of the substrate in which the p-type region and the n-type region were formed in Example 1, aluminum oxide having a film thickness of 100 nm was formed using an atomic layer deposition method, and, further, aluminum oxide having a film thickness of 10 nm was formed on the light receiving surface. Then, the substrate was subjected to heat treatment for 15 minutes at 450° C. in a nitrogen atmosphere. On the light receiving surface of the substrate, a silicon nitride film having a film thickness of 90 nm was further formed using plasma CVD.

(64) A solar cell was obtained by applying Ag paste on the above-described p-type region and n-type region through screen printing, and curing the Ag paste through heat treatment at 800° C. for 3 seconds. Finally, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

Example 3

(65) Aluminum oxide having a film thickness of 10 nm was formed using an atomic layer deposition method on both surfaces of the substrate on which the p-type region and the n-type region were formed in Example 1, and then, the substrate was subjected to heat treatment at 450° C. for 15 minutes in a nitrogen atmosphere. On the both surfaces of the substrate, a silicon nitride film having a film thickness of 90 nm was further formed using plasma CVD.

(66) A solar cell was obtained by applying Ag paste on the above-described p-type region and n-type region through screen printing, and curing the Ag paste through heat treatment at 800° C. for 3 seconds. Finally, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

Example 4

(67) The same solar cell as that of Example 1 was manufactured using a boron-doped <100> p-type as-cut silicon substrate of 150 mm square, having a thickness of 200 μm and having specific resistance of 1 Ω.Math.cm. Then, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

Example 5

(68) In a phosphorus-doped <100> n-type as-cut silicon substrate of 150 mm square, having a thickness of 200 μm and having specific resistance of 1 Ω.Math.cm, after a damage layer was removed with a hot concentrated potassium hydroxide aqueous solution, the substrate was immersed in a 5% potassium hydroxide aqueous solution at 80° C. for 20 minutes to form texture in a random pyramid shape, and, continuously, cleaned in a mixed solution of hydrochloric acid and hydrogen peroxide.

(69) Then, a mixture of a boric acid compound and a binder was spin coated on the back surface of the substrate, and boron was diffused through heat treatment at 1000° C. for 30 minutes to form a p-type region. Then, continuously, oxidizing heat treatment was performed at 1000° C. for 2 hours to form an oxide film. After the oxide film was formed, the oxide film at a portion where an n-type region was to be formed on the back surface of the substrate was removed in an island shape using laser radiation with a wavelength of 532 nm. In this example, an area occupied by the n-type region was reduced by 25% compared to Example 1.

(70) Then, the substrates were loaded on a quartz board such that light receiving surfaces of a pair of two substrates faced each other, and heat treatment was performed at 820° C. for 30 minutes by using phosphorous oxychloride to form an n-type region. After this process, peak impurity concentration of the p-type region and the n-type region in a substrate depth direction was measured by using arbitrarily extracted samples through a secondary ion mass spectroscopic method. As a result, the peak concentration was 5×10.sup.19 atoms/cm.sup.3 in the p-type region, and 3×10.sup.19 atoms/cm.sup.3 in the n-type region.

(71) After the substrate was immersed in a 10% HF aqueous solution to remove a glass layer and an oxide film, the substrate was cleaned by being sequentially immersed in a mixed solution of hydrochloric acid water and hydrogen peroxide water at 80° C., and a 2% HF aqueous solution, and the substrate was rinsed with pure water and then dried.

(72) Aluminum oxide having a film thickness of 10 nm was formed on the both surfaces of the substrate using an atomic layer deposition method. Then, the substrate was subjected to heat treatment at 450° C. for 15 minutes in a nitrogen atmosphere. A silicon nitride film having a film thickness of 90 nm was further formed on the both surfaces of the substrate using plasma CVD.

(73) A solar cell was obtained by applying Ag paste on the above-described p-type region and n-type region through screen printing, and curing the Ag paste through heat treatment at 800° C. for 3 seconds. Finally, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

Comparative Example 1

(74) On the back surface of the substrate in which the p-type region and the n-type region were formed in Example 1, aluminum oxide having a film thickness of 10 nm was formed using an atomic layer deposition method. Then, after the p-type region was covered with acid resist by screen printing and dried, aluminum oxide on the exposed n-type region was removed with a 2% hydrofluoric acid aqueous solution. After the acid resist was removed and the substrate was cleaned, the substrate was subjected to heat treatment at 450° C. for 15 minutes in a nitrogen atmosphere. On the both surfaces of the substrate, a silicon nitride film having a film thickness of 90 nm was further formed using plasma CVD.

(75) A solar cell was obtained by applying Ag paste on the above-described p-type region and n-type region through screen printing, and curing the Ag paste through heat treatment at 800° C. for 3 seconds. Finally, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

Comparative Example 2

(76) A phosphorus diffusion source in which a phosphorus compound and a binder were mixed was applied on the light receiving surface of the substrate in which the p-type region and the n-type region were formed in Example 1, and heat treatment was performed at 820° C. for 10 minutes in a state where applied surfaces faced each other to form an FSF layer on the light receiving surface. Then, after the substrate was immersed in a 10% HF aqueous solution to remove a glass layer, the substrate was cleaned by being sequentially immersed in a mixed solution of hydrochloric acid water and hydrogen peroxide water at 80° C., and a 2% HF aqueous solution, and the substrate was rinsed with pure water and then dried.

(77) Then, aluminum oxide having a film thickness of 10 nm was formed on the both surfaces of the substrate using an atomic layer deposition method. Then, the p-type region was covered with acid resist using screen printing, and the substrate was dried, aluminum oxide on the exposed n-type region was removed with a 2% hydrofluoric acid aqueous solution. After the acid resist was removed and the substrate was cleaned, the substrate was subjected to heat treatment at 450° C. for 15 minutes in a nitrogen atmosphere. On the both surfaces of the substrate, a silicon nitride film having a film thickness of 90 nm was further formed using plasma CVD.

(78) A solar cell was obtained by applying Ag paste on the above-described p-type region and n-type region through screen printing, and curing the Ag paste through heat treatment at 800° C. for 3 seconds. Finally, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

Comparative Example 3

(79) A phosphorus diffusion source in which a phosphorus compound and a binder were mixed was applied on the light receiving surface of the substrate in which the p-type region and the n-type region were formed in Example 1, and heat treatment was performed at 820° C. for 10 minutes in a state where applied surfaces faced each other to form an FSF layer on the light receiving surface. Then, after the substrate was immersed in a 10% HF aqueous solution to remove a glass layer, the substrate was cleaned by being sequentially immersed in a mixed solution of hydrochloric acid water and hydrogen peroxide water at 80° C., and a 2% HF aqueous solution, and the substrate was rinsed with pure water and then dried.

(80) Then, the substrate was subjected to heat treatment at 900° C. for 10 minutes in an oxygen atmosphere to form a silicon oxide film (having a film thickness of approximately 10 nm) on the both surfaces of the substrate. A silicon nitride film having a film thickness of 90 nm was further formed on the both surfaces of the substrate using plasma CVD.

(81) A solar cell was obtained by applying Ag paste on the above-described p-type region and n-type region through screen printing, and curing the Ag paste through heat treatment at 800° C. for 3 seconds. Finally, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

Comparative Example 4

(82) In a solar cell manufactured through the same process as in Example 3, phosphorus diffusion conditions were adjusted so that peak impurity concentration of the n-type region in a substrate depth direction was 3×10.sup.18 atoms/cm.sup.3. Finally, output characteristics of the solar cell were measured using pseudo sunlight using a xenon lamp as a light source.

Comparative Example 5

(83) Oxide aluminum having a film thickness of 10 nm was formed using an atomic layer deposition method on the light receiving surface of the substrate in which the p-type region and the n-type region were formed in Example 4, and the substrate was subjected to heat treatment at 450° C. for 15 minutes in a nitrogen atmosphere. A silicon nitride film having a film thickness of 90 nm was further formed on the both surfaces of the substrate using plasma CVD.

(84) A solar cell was obtained by applying Ag paste on the above-described p-type region and n-type region through screen printing, and curing the Ag paste through heat treatment at 800° C. for 3 seconds. Finally, output characteristics of the solar cell were measured with pseudo sunlight using a xenon lamp as a light source.

(85) Characteristics of the solar cells in Examples 1 to 5 and Comparative Examples 1 to 5 are shown in Table 1. In Table 1, J.sub.sc indicates a short-circuit current, V.sub.oc indicates an open circuit voltage, FF indicates a fill factor, and Eff. indicates conversion efficiency. Conversion efficiency of the solar cells according to the present invention were all equal to or higher than 22.0%, and exhibited higher conversion efficiency than that in Comparative Examples. Further, the result of Example 5 indicates that the present invention was particularly effective in a solar cell structure in which an area occupied by the p-type region was larger.

(86) TABLE-US-00001 TABLE 1 Jsc [mA/cm.sup.2] Voc [mV] FF Eff. [%] Example 1 39.7 0.688 0.805 22.0 Example 2 40.3 0.689 0.802 22.3 Example 3 40.8 0.688 0.803 22.5 Example 4 40.8 0.688 0.805 22.6 Example 5 41.1 0.692 0.800 22.8 Comparative 38.8 0.682 0.805 21.3 Example 1 Comparative 39.5 0.682 0.807 21.7 Example 2 Comparative 38.5 0.686 0.803 21.2 Example 3 Comparative 39.6 0.653 0.794 20.5 Example 4 Comparative 39.9 0.679 0.807 21.9 Example 5

(87) It should be noted that the present invention is not limited to the above-described embodiments. The above-described embodiments are examples, and any invention which has substantially the same configuration and provides the same operational effects as those of the technical idea recited in the claims of the present invention is incorporated into the technical scope of the present invention.