COPPER SURFACE PASSIVATION COMPOSITION, USE THEREOF, AND PHOTORESIST STRIPPER CONTAINING SAME

Abstract

The present invention relates to a copper surface passivation composition, comprising 4-(2-pyridineazo) resorcinol and glucosamine derivatives, and also relates to a photoresist stripper containing same and a method for cleaning a copper substrate. The copper surface passivation composition provides a good copper passivation protection performance, so that the copper surface passivation composition can be used for photoresist removal and copper surface passivation protection in a bumping process of semiconductor back-end packaging with good industrial application prospects and promotion potential in the technical field of microelectronics.

Claims

1. A copper surface passivation composition, wherein the copper surface passivation composition comprises 4-(2-pyridineazo) resorcinol and a glucosamine derivative.

2. The copper surface passivation composition according to claim 1, wherein a mass ratio of the 4-(2-pyridineazo) resorcinol to the glucosamine derivative is 1:1-5, preferably 1:2-4, and most preferably 1:3.

3. A photoresist stripper, wherein the photoresist stripper comprises, in parts by mass, the following components: TABLE-US-00003 copper surface passivation composition 0.01-1 water-soluble organic solvent 60-90 alkali 2-40 polyol 5-30 deionized water 1-10 wherein, the copper surface passivation composition is the copper surface passivation composition in claim 1.

4. The photoresist stripper according to claim 3, wherein the water-soluble organic solvent is any one of sulfone, sulfoxide, alcohol ether, amide, and pyrrolidone, or a combination of any multiple thereof, wherein, the sulfone is preferably sulfolane; wherein, the sulfoxide is preferably dimethyl sulfoxide; wherein, the alcohol ether is any one of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, and propylene glycol monobutyl ether, or a combination of any multiple thereof, wherein, the amide is any one of N-methylformamide, N,N-dimethylformamide, N,N-dimethylacetamide, acetamide, N-ethylformamide, and N,N-diethylformamide, or a combination of any multiple thereof; wherein, the pyrrolidone is N-methyl pyrrolidone or N-ethyl pyrrolidone, or a combination of these two in any proportion.

5. The photoresist stripper according to claim 3, wherein the alkali is an organic alkali, more specifically, quaternary ammonium hydroxide or alkanolamine.

6. The photoresist stripper according to claim 3, wherein the polyol is any one of ethylene glycol, diethylene glycol, 1,2-propanediol, and 1,3-propanediol, or any combination of any multiple thereof.

7. A preparation method for the photoresist stripper of claim 3, the preparation method is specifically as below: weighing individual components in respective parts by mass, respectively, then adding a copper surface passivation composition, a water-soluble organic solvent, an alkali and a polyol into deionized water at room temperature, and stirring thoroughly to mix uniformly, to give a uniform and transparent photoresist stripper; alternatively, another preparation method is specifically as below: weighing individual components in respective parts by mass, respectively, adding a water-soluble organic solvent, an alkali and a polyol into deionized water at room temperature to give a mixed solution, then adding a copper surface passivation composition into the mixed solution with stirring until uniformly mixed, to give a uniform and transparent photoresist stripper.

8. Use of the copper surface passivation composition of claim 1 for inhibition of copper corrosion.

9. Use of the copper surface passivation composition of claim 1 for preparation of a photoresist stripper.

10. A method for cleaning a photoresist residue on a copper substrate, the cleaning method is specifically as below: at 35-45 C., immersing a photoresist-loaded copper substrate in the photoresist stripper of claim 3, or spraying the photoresist stripper of claim 3 onto the copper substrate, the duration of immersing or spraying is 5-40 minutes, followed by rinsing with ultrapure water, and then blowing to dry with high-purity nitrogen to complete the cleaning process of the copper substrate.

11. A photoresist stripper, wherein the photoresist stripper comprises, in parts by mass, the following components: TABLE-US-00004 copper surface passivation composition 0.01-1 water-soluble organic solvent 60-90 alkali 2-40 polyol 5-30 deionized water 1-10 wherein, the copper surface passivation composition is the copper surface passivation composition in claim 2.

12. The photoresist stripper according to claim 11, wherein the water-soluble organic solvent is any one of sulfone, sulfoxide, alcohol ether, amide, and pyrrolidone, or a combination of any multiple thereof; wherein, the sulfone is preferably sulfolane; wherein, the sulfoxide is preferably dimethyl sulfoxide; wherein, the alcohol ether is any one of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, and propylene glycol monobutyl ether, or a combination of any multiple thereof; wherein, the amide is any one of N-methylformamide, N,N-dimethylformamide, N,N-dimethylacetamide, acetamide, N-ethylformamide, and N,N-diethylformamide, or a combination of any multiple thereof; wherein, the pyrrolidone is N-methyl pyrrolidone or N-ethyl pyrrolidone, or a combination of these two in any proportion.

13. The photoresist stripper according to claim 4, wherein the alkali is an organic alkali, more specifically, quaternary ammonium hydroxide or alkanolamine.

14. The photoresist stripper according to claim 4, wherein the polyol is any one of ethylene glycol, diethylene glycol, 1,2-propanediol, and 1,3-propanediol, or any combination of any multiple thereof.

15. The photoresist stripper according to claim 5, wherein the polyol is any one of ethylene glycol, diethylene glycol, 1,2-propanediol, and 1,3-propanediol, or any combination of any multiple thereof.

16. A preparation method for the photoresist stripper of claim 4, the preparation method is specifically as below: weighing individual components in respective parts by mass, respectively, then adding a copper surface passivation composition, a water-soluble organic solvent, an alkali and a polyol into deionized water at room temperature, and stirring thoroughly to mix uniformly, to give a uniform and transparent photoresist stripper; alternatively, another preparation method is specifically as below: weighing individual components in respective parts by mass, respectively, adding a water-soluble organic solvent, an alkali and a polyol into deionized water at room temperature to give a mixed solution, then adding a copper surface passivation composition into the mixed solution with stirring until uniformly mixed, to give a uniform and transparent photoresist stripper.

17. A preparation method for the photoresist stripper of claim 5, the preparation method is specifically as below: weighing individual components in respective parts by mass, respectively, then adding a copper surface passivation composition, a water-soluble organic solvent, an alkali and a polyol into deionized water at room temperature, and stirring thoroughly to mix uniformly, to give a uniform and transparent photoresist stripper; alternatively, another preparation method is specifically as below: weighing individual components in respective parts by mass, respectively, adding a water-soluble organic solvent, an alkali and a polyol into deionized water at room temperature to give a mixed solution, then adding a copper surface passivation composition into the mixed solution with stirring until uniformly mixed, to give a uniform and transparent photoresist stripper.

18. A preparation method for the photoresist stripper of claim 6, the preparation method is specifically as below: weighing individual components in respective parts by mass, respectively, then adding a copper surface passivation composition, a water-soluble organic solvent, an alkali and a polyol into deionized water at room temperature, and stirring thoroughly to mix uniformly, to give a uniform and transparent photoresist stripper; alternatively, another preparation method is specifically as below: weighing individual components in respective parts by mass, respectively, adding a water-soluble organic solvent, an alkali and a polyol into deionized water at room temperature to give a mixed solution, then adding a copper surface passivation composition into the mixed solution with stirring until uniformly mixed, to give a uniform and transparent photoresist stripper.

19. Use of the copper surface passivation composition of claim 2 for inhibition of copper corrosion.

20. Use of the copper surface passivation composition of claim 2 for preparation of a photoresist stripper.

21. A method for cleaning a photoresist residue on a copper substrate, the cleaning method is specifically as below: at 35-45 C., immersing a photoresist-loaded copper substrate in the photoresist stripper of claim 4, or spraying the photoresist stripper of any one of claim 4 onto the copper substrate, the duration of immersing or spraying is 5-40 minutes, followed by rinsing with ultrapure water, and then blowing to dry with high-purity nitrogen to complete the cleaning process of the copper substrate.

22. A method for cleaning a photoresist residue on a copper substrate, the cleaning method is specifically as below: at 35-45 C., immersing a photoresist-loaded copper substrate in the photoresist stripper of claim 5, or spraying the photoresist stripper of any one of claim 5 onto the copper substrate, the duration of immersing or spraying is 5-40 minutes, followed by rinsing with ultrapure water, and then blowing to dry with high-purity nitrogen to complete the cleaning process of the copper substrate.

23. A method for cleaning a photoresist residue on a copper substrate, the cleaning method is specifically as below: at 35-45 C., immersing a photoresist-loaded copper substrate in the photoresist stripper of claim 6, or spraying the photoresist stripper of any one of claim 6 onto the copper substrate, the duration of immersing or spraying is 5-40 minutes, followed by rinsing with ultrapure water, and then blowing to dry with high-purity nitrogen to complete the cleaning process of the copper substrate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0069] FIG. 1 shows a scanning electron microscope image of a copper pillar bump with the photoresist not removed, herein the magnification is 500 times.

[0070] FIG. 2 shows a scanning electron microscope image of copper pillar bumps after cleaning with the photoresist stripper G1, herein the magnification is 250 times.

[0071] FIG. 3 shows a magnified scanning electron microscope image of a single copper pillar bump in FIG. 2, herein the magnification is 2780 times.

[0072] FIG. 4 shows a scanning electron microscope image of a copper pillar bump after cleaning with the photoresist stripper D1, herein the magnification is 2800 times.

[0073] FIG. 5 shows a scanning electron microscope image of a copper pillar bump after cleaning with the photoresist stripper D6, herein the magnification is 2800 times.

[0074] FIG. 6 shows a scanning electron microscope image of a copper pillar bump after cleaning with the photoresist stripper solution D11, herein the magnification is 2800 times.

[0075] FIG. 7 shows a scanning electron microscope image of the bottom area locally magnified from the copper pillar bump in FIG. 3, herein the magnification is 10000 times.

[0076] FIG. 8 shows a scanning electron microscope image of the bottom area locally magnified from the copper pillar bump in FIG. 4, herein the magnification is 10000 times.

[0077] Herein, the rectangular boxes in FIGS. 3-6 show the side walls of the copper pillars, while the rectangular boxes in FIGS. 7-8 show the bottom areas of the copper pillars.

DETAILED DESCRIPTION

[0078] The present invention will be described in detail below by specific examples, but the use and purposes of these exemplary embodiments are only used to exemplify the present invention, and are not intended to limit the actual protection scope of the present invention in any form, much less to limit the protection scope of the present invention thereto.

[0079] Where, unless otherwise specified, the individual components used in step 2 in each example or comparative example are the corresponding components weighed in the corresponding step 1.

Example 1: Preparation of a Photoresist Stripper

[0080] Step 1: weighing individual components in parts by mass as below, respectively: 0.5 part of a copper surface passivation composition (a mixture of 4-(2-pyridineazo) resorcinol and N-acetyl-D-glucosamine at a mass ratio of 1:3), 75 parts of a water-soluble organic solvent diethylene glycol monoethyl ether, 21 parts of an alkali N-ethyl ethanolamine, 17.5 parts of a polyol 1,3-propanediol, and 5.5 parts of deionized water; [0081] Step 2: adding the copper surface passivation composition, the water-soluble organic solvent, the alkali, and the polyol into deionized water at room temperature, and stirring thoroughly to mix uniformly, to give a uniform and transparent photoresist stripper, named as G1.

Example 2: Preparation of a Photoresist Stripper

[0082] Step 1: weighing individual components in parts by mass as below, respectively: 1 part of a copper surface passivation composition (a mixture of 4-(2-pyridineazo) resorcinol and N-acetyl-D-glucosamine at a mass ratio of 1:3), 60 parts of a water-soluble organic solvent dimethyl sulfoxide, 40 parts of an alkali benzyl trimethyl ammonium hydroxide, 5 parts of polyol diethylene glycol, and 10 parts of deionized water; [0083] Step 2: adding the water-soluble organic solvent, the alkali, and the polyol into deionized water at room temperature to give a mixed solution, then adding a copper surface passivation composition into the mixed solution with stirring, and stirring thoroughly to mix uniformly, to give a uniform and transparent photoresist stripper, named as G2.

Example 3: Preparation of a Photoresist Stripper

[0084] Step 1: weighing individual components in parts by mass as below, respectively: 0.01 part of a copper surface passivation composition (a mixture of 4-(2-pyridineazo) resorcinol and N-acetyl-D-glucosamine at a mass ratio of 1:3), 90 parts of a water-soluble organic solvent sulfolane, 2 parts of an alkali tetramethylammonium hydroxide, 30 parts of polyol ethylene glycol, and 1 part of deionized water; [0085] Step 2: adding the copper surface passivation composition, the water-soluble organic solvent, the alkali, and the polyol into deionized water at room temperature, and stirring thoroughly to mix uniformly, to give a uniform and transparent photoresist stripper, named as G3.

Example 4-5: Preparation of Photoresist Strippers

[0086] Example 4: Except replacing the water-soluble organic solvent diethylene glycol monoethyl ether used in Example 1 with an equal mass fraction of N-methylformamide and replacing the alkali N-ethyl ethanolamine used in Example 1 with an equal mass fraction of diisopropanolamine, all other operations remain unchanged, and the resulting photoresist stripper is named as G4.

[0087] Example 5: Except replacing the water-soluble organic solvent dimethyl sulfoxide used in Example 2 with an equal mass fraction of N-methyl pyrrolidone and replacing the alkali benzyltrimethyl ammonium hydroxide used in Example 2 with an equal mass fraction of diglycolamine, all other operations remain unchanged, and the resulting photoresist stripper is named as G5.

Example 6-8: Preparation of Photoresist Strippers

[0088] Except replacing the N-acetyl-D-glucosamine used in Examples 1-3 with D-glucosamine, chitosan oligosaccharide and carboxymethyl chitosan, respectively, all other operations remain unchanged, and the resulting photoresist strippers are successively named as G6, G7 and G8.

Example 9-12: Preparation of Photoresist Strippers

[0089] Except changing the mass ratio of 4-(2-pyridineazo) resorcinol to N-acetyl-D-glucosamine from 1:3 as used in Example 1 to 1:2, 1:4, 1:1, and 1:5, respectively, all other operations remain unchanged, and the resulting photoresist stripper are successively named as G9, G10, G11, and G12.

Comparative Examples 1-5: Preparation of Photoresist Strippers

[0090] Except replacing the copper surface passivation composition used in Examples 1-5 with the same mass fraction of a single component 4-(2-pyridineazo) resorcinol, respectively, all other operations remain unchanged, and the resulting photoresist strippers are successively named as D1, D2, D3, D4, and D5.

Comparative Examples 6-10: Preparation of Photoresist Strippers

[0091] Except replacing the copper surface passivation composition used in Examples 1-5 with the same mass fraction of a single component N-acetyl-D-glucosamine, respectively, all other operations remain unchanged, and the resulting photoresist strippers are successively named as D6, D7, D8, D9, and D10.

Comparative Examples 11-15: Preparation of Photoresist Strippers

[0092] Except omitting the copper surface passivation composition used in Examples 1-5, respectively, all other operations remain unchanged, and the resulting photoresist strippers are successively named as D11, D12, D13, D14, and D15.

Cleaning Performance Test of Individual Photoresist Stripper

[0093] In the manufacturing process of copper pillar bumps, after the electroplating of the copper pillar bumps, the photoresist needs to be removed by cleaning. The cleaning process is specifically as below: at 40 C., directly immersing a photoresist-loaded copper substrate in the individual photoresist stripper as obtained above, respectively, or spraying the individual photoresist stripper onto the copper substrate, the duration of immersing or spraying is 30 minutes, followed by rinsing with ultrapure water (with a resistance of at least 18 M at 25 C.), and then blowing to dry with high-purity nitrogen (with a volume purity greater than 99.999%), to complete the cleaning treatment of the copper substrate.

Qualitative Analysis of Cleaning and Copper Surface Passivation Results of Individual Photoresist Stripper

[0094] 1. FIG. 1 shows a copper pillar bump after the electroplating process and before cleaning the photoresist. Herein, the height of the bump is lower than that of the photoresist.

[0095] 2. As shown in FIG. 2, after cleaning with the photoresist stripper G1, there are not any residues on the surface of the bumps, and the photoresist is thoroughly, completely removed.

[0096] 3. As shown in FIG. 3, after cleaning the copper pillar bumps with the photoresist stripper G1, there are not any photoresist residues on the side wall surface of the copper pillar, indicating that the excellent cleaning performance of G1; and the side wall surface of the copper pillar is smooth without any corrosion, indicating that the copper surface passivation protection effect is excellent.

[0097] At the same time, it can also be seen that, the bottom area of the copper pillar is not corroded.

[0098] The effect of the magnified images after cleaning with G2-G5 is exactly the same as in FIG. 2, so they will not be listed one by one.

[0099] The magnified images after cleaning with G6-G8 and G9-G12 are similar to FIG. 2, but there is very slight corrosion in the bottom area of the side wall of the copper pillar (however, it cannot be seen clearly from the magnified images, so the data will be quantified in the subsequent copper corrosion rate test). This demonstrates that the mass ratio of 4-(2-pyridineazo) resorcinol to N-acetyl-D-glucosamine in the copper surface passivation composition is most preferably 1:3, but the entire range of 1:1-5 still has excellent copper surface passivation protection effect and can still be used for continued processing in subsequent processes.

[0100] 4. As shown in FIG. 4, it can be clearly seen from the copper pillar bump after cleaning with the photoresist stripper D1 that the photoresist on the whole copper pillar bump is cleaned thoroughly and completely without any residues, indicating that the photoresist stripper D1 has a good cleaning effect.

[0101] It can also be seen that there is some corrosion in the bottom area of the copper pillar.

[0102] At the same time, it can be seen that the side wall of the copper pillar is uneven and corroded obviously, indicating that the passivation protection effect to the copper surface is reduced significantly when 4-(2-pyridineazo) resorcinol is used alone, and the copper pillar cannot be used in the subsequent processes.

[0103] The effect of the magnified images after cleaning with D2-D5 is highly similar to that in FIG. 3, so they will not be listed one by one.

[0104] 5. As shown in FIG. 5, it can be clearly seen from the copper pillar bump after cleaning with the photoresist stripper D6 that the photoresist on the whole copper pillar bump is cleaned thoroughly and completely without any residues, indicating that the photoresist stripper D6 performs well in cleaning.

[0105] However, the side wall of the copper pillar is uneven and corroded obviously to an extent more serious than that in FIG. 4, indicating that the passivation protection effect to the copper surface is reduced more significantly when N-acetyl-D-glucosamine is used alone, and the copper pillar cannot be used in the subsequent processes.

[0106] At the same time, it can also be seen that some corrosion occurred in the bottom area of the copper pillar.

[0107] The effect of the magnified images after cleaning with D7-D10 is highly similar to that in FIG. 5, so they will not be listed one by one.

[0108] 6. As shown in FIG. 6, it can be clearly seen from the copper pillar bump after cleaning with the photoresist stripper D11 that the photoresist on the whole copper pillar bump is cleaned thoroughly and completely without any residues, indicating that the photoresist stripper D11 performs well in cleaning.

[0109] However, the side wall of the copper pillar is uneven most obviously and corroded to an extent more serious than that in FIGS. 4-5, indicating that when the stripper is lack of the copper surface passivation composition in the present invention, the copper surface is corroded very severely and the copper pillar cannot be used in the subsequent processes at all.

[0110] At the same time, it can also be seen that there is obvious corrosion in the bottom area, which is more serious than that in FIGS. 4-5 obviously (at this point it is obvious that the corrosion is at its worst, so it is unnecessary for magnified scanning display).

[0111] The effect of the magnified images after cleaning with D12-D15 is highly similar to that in FIG. 6, so they will not be listed one by one.

[0112] 7. FIG. 7 shows a scanning electron microscope image locally magnified (at 10000 magnification) of the bottom area of the copper pillar in FIG. 3 after using the photoresist stripper G1, from which it can be seen that the bottom area of the copper pillar is not corroded. For the same local part after using the photoresist stripper G2-G5 respectively, which is also magnified by 10000 times, copper is not corroded either, so the images are not listed one by one.

[0113] 8. FIG. 8 shows a scanning electron microscope image locally magnified (at 10000 magnification) of the bottom area of the copper pillar in FIG. 4 after using the photoresist stripper D1, from which it can be seen that there are obvious corrosion pits in the bottom area of the copper pillar. For the same local part after using the photoresist stripper D2-D10 respectively, which is also magnified by 10000 times, substantially similar corrosion pits (the corrosion situation and the depth of pits are substantially the same) also appear, so the images are not listed one by one.

[0114] In conclusion, the passivation protection ability of different photoresist stripper on Cu can be accurately and qualitatively determined from the scanning electron microscope images, wherein G1-G5 have very excellent copper surface passivation protection ability. When the copper surface passivation composition is changed to a single component, its passivation ability is reduced significantly (the effect of the single component 4-(2-pyridineazo) resorcinol is superior to that of the single component N-acetyl-D-glucosamine), and when the copper surface passivation composition of the present invention is not used, the copper surface is corroded most seriously. It demonstrates that the best technical effect can be achieved only when the copper surface passivation composition as defined in the present invention is used. This should be due to a good complex synergic effect between 4-(2-pyridineazo) resorcinol and N-acetyl-D-glucosamine. The inventor believes that it should be due to the fact that the pyridine ring of 4-(2-pyridylazo) resorcinol is connected to the benzene ring through conjugated nitrogen-nitrogen double bonds, forming a large conjugated network with a high electron cloud density, whereas OH and NH.sub.2, which contain lone electron pairs, can be bonded to the surface of Cu, so that the molecule can be stably adsorbed and immobilized to the surface of Cu, thus protecting the Cu from external erosion, whereas the N-acetyl-D-glucosamine can be adsorbed to the surface of Cu through OH. It is speculated that the synergic effect of the two compounds when they are combined may be due to the fact that when the two compounds are adsorbed on the Cu surface at a certain ratio at the same time, a highest molecular adsorption amount may be achieved on the Cu surface (because of the differences in the adsorption sites of different molecules, an adsorption film with a greater density may be formed when molecules with different structures act jointly), thereby achieving the best Cu protection effect. The inventor will conduct further in-depth research on this.

Quantitative Test of Individual Photoresist Strippers on the Passivation of Copper Surface

[0115] In order to obtain more accurate data on the passivation protection of copper surfaces, ICP-MS (Inductively Coupled Plasma Mass Spectrometry) is used by the inventor to conduct a more accurate quantitative test. The test method is specifically as below: directly immersing photoresist-loaded copper pillar bump samples of size 44 cm in the individual photoresist strippers obtained above at 40 C. for a period of 30 minutes, then measuring the concentration of metal ions in the strippers by means of ICP-MS, and calculating the respective corrosion rate (/min, i.e., /minute, also may be referred to as etching rate), thereby investigating the corrosion rates of different photoresist strippers on the metallic copper, with the test results shown in Table 1 below:

TABLE-US-00002 TABLE 1 Corrosion rates of metallic Cu by different strippers Cu corrosion rate Photoresist stripper (/min) G1-G5 0.11/0.17/0.13/0.12/0.13 G6-G8 0.48/0.41/0.65 G9-G12 0.25/0.28/0.45/0.52 D1-D5 6.5/7.1/6.2/6.8/7.6 D6-D10 9.3/8.5/8.2/8.7/9.4 D11-D15 15.7/16.5/16.1/17.3/16.9

[0116] Herein, there is a one-to-one correspondence between the photoresist stripper and the Cu corrosion rate. Take G1-G5 as an example, the Cu corrosion rate (/min) is 0.11/0.17/0.13/0.12/0.13, meaning that the corrosion rates (/min) for G1, G2, G3, G4, and G5 are 0.11, 0.17, 0.13, 0.12 and 0.13, respectively. There is also the same corresponding reference relationship between other photoresist strippers and Cu corrosion rates, and it will not be described here one by one.

[0117] It can be seen from Table 1 above that, the photoresist strippers G1-G5 of the present invention have excellent ability of copper surface passivation protection with a very low corrosion rate. However, when the glucosamine derivative therein is replaced, it is found that the copper corrosion rate increases (see G6-G8), indicating that N-acetyl-D-glucosamine is the optimal selection (especially for G6, the corrosion rate increases significantly when the N-acetyl-D-glucosamine is simply replaced by D-glucosamine). When the mass ratio of 4-(2-pyridineazo) resorcinol to glucosamine derivatives is changed, the corrosion rate also increases. Moreover, it can be seen that the wider deviation from the optimal mass ratio of 1:3, the greater the corrosion rate is (the mass ratio in G9-G12 is 1:2, 1:4, 1:1 and 1:5, respectively, and the corrosion rate is 0.25, 0.28, 0.45, 0.52 in turn, indicating that the wider deviation from 1:3, the greater the corrosion rate is). When the copper surface passivation composition is changed from dual-component to single-component, the corrosion rate increases very significantly (see D1-D5 and D6-D10, while the corrosion rate for D6-D10 is significantly greater than that for D1-D5, also complying with the qualitative characterization in the drawings). Most significantly, when the copper surface passivation composition of the present invention is not used, the corrosion rate reaches the maximum (see D11-D15), and the Cu corrosion is the most serious.

[0118] As described above, the present invention provides a copper surface passivation composition and use thereof, a photoresist stripper containing the copper surface passivation composition, a preparation method for the photoresist stripper and use thereof and a method for cleaning a copper substrate using the stripper. By the use of a dual-component compound, the selection of optimal components and the optimal selection of amount, the copper surface passivation composition achieves excellent technical effects, so that the photoresist stripper not only has excellent cleaning performance, but also has excellent copper passivation protection effect, enabling it to be used for photoresist removal and copper surface protection in the bumping process of semiconductor back-end packaging with good industrial application prospects and promotion potential in the technical field of microelectronics.

[0119] It should be understood that, these examples are only used to illustrate the present invention and are not intended to limit the scope of protection of the present invention. In addition, it should also be understood that various changes, modifications and/or variations can be made to the present invention by those skilled in the art after reading the technical contents of the present invention, and all these equivalents also fall within the scope of protection as defined by the appended claims of the present application.