SUBSTRATE PROCESSING APPARATUS AND METHOD OF PROCESSING SUBSTRATE USING THE SAME

Abstract

A substrate processing apparatus includes a platen that supports a polishing pad and rotates about a first axis extending in a first direction, a polishing head supporting a substrate and disposed on the platen, and a slurry arm capable of supplying slurry onto the platen, wherein the slurry arm includes a slurry arm body disposed on the platen and extending in a second direction perpendicular to the first direction, a steam bar combined with the slurry arm body and capable of spraying water vapor, and a steam bar power supply capable of applying a voltage to the steam bar such that the steam bar has an electric charge, and the steam bar includes a steam nozzle spraying the water vapor and extending to the platen.

Claims

1. A substrate processing apparatus comprising: a platen configured to support a polishing pad, the platen configured to rotate about an axis of the platen, the axis extending in a first direction which is perpendicular to a surface of the platen; a polishing head configured to support a substrate and disposed on the platen; and a slurry arm configured to supply a slurry onto the platen, the slurry arm including: a slurry arm body disposed on the platen and extending in a second direction perpendicular to the first direction; a steam bar combined with the slurry arm body and configured to spray steam, the steam bar including a steam nozzle configured to spray the steam, the steam bar extending to the platen; and a steam bar power supply configured to apply a voltage to the steam bar to electrically charge the steam bar.

2. The substrate processing apparatus of claim 1, further comprising a slurry arm driver configured to rotate the slurry arm or adjust a height of the slurry arm.

3. The substrate processing apparatus of claim 1, wherein the steam bar further includes a filter connected to a lower end of the steam nozzle to protect the steam nozzle from the slurry.

4. The substrate processing apparatus of claim 3, wherein the filter includes one of polyamide, polyester, and polypropylene.

5. The substrate processing apparatus of claim 1, wherein the steam bar further includes a steam bar body supporting the steam nozzle, wherein an axis of the steam nozzle aligns with a rotation direction of the platen with respect to a top down view, and wherein an angle formed between the steam nozzle and the surface of the platen is greater than 30 and less than 90 with respect to a side view.

6. The substrate processing apparatus of claim 1, wherein the slurry arm further includes a plate-shaped shutter and configured to spray steam at an angle with respect to the surface of the platen, wherein one side of the shutter is connected to the steam bar and fixed to the steam bar, and wherein another side of the shutter is configured to move away from the steam bar toward the platen.

7. The substrate processing apparatus of claim 6, wherein the angle with respect to the surface of the platen is greater than 0 and less than 90.

8. The substrate processing apparatus of claim 1, wherein the steam bar power supply includes: a power source configured to supply power; and a connector connecting the power source and the steam bar and including a conductor, and wherein the voltage that the steam bar power supply applies to the steam bar is in a range of 1500V to 1500V.

9. The substrate processing apparatus of claim 1, further comprising: a controller electrically connected to the steam bar power supply and configured to control the voltage of the steam bar power supply; and a surface potential meter connected to the controller and configured to measure a surface potential of the polishing pad supported by the platen, wherein the controller is configured to provide feedback to the steam bar power supply based on data obtained from the surface potential meter.

10. The substrate processing apparatus of claim 2, further comprising: a controller that drives the slurry arm driver; and a surface potential meter configured to measure a surface potential of the polishing pad supported by the platen, wherein the controller is electrically connected to the slurry arm driver, and wherein the controller is configured to operate the slurry arm driver based on data obtained from the surface potential meter.

11. The substrate processing apparatus of claim 2, further comprising a cleaning sprayer configured to spray a cleaning liquid from underneath the steam bar toward a lower surface of the steam bar, wherein the slurry arm is configured to be rotationally moved out of the platen by the slurry arm driver and disposed on the cleaning sprayer.

12. A substrate processing apparatus comprising: a platen rotatable about an axis extending in a first direction; a polishing head disposed on the platen and configured to rotate; and a slurry arm extending in a second direction perpendicular to the first direction and configured to supply a slurry onto the platen, wherein the slurry arm includes: a slurry arm body disposed on the platen; a steam bar combined with the slurry arm body and configured to spray steam; and a steam bar power supply configured to apply a voltage to the steam bar and charge the steam bar with a charge of the same type as the slurry, wherein the steam bar includes a steam nozzle configured to spray the steam toward the platen.

13. The substrate processing apparatus of claim 12, wherein the slurry arm body includes a pad sprayer configured to spray inert gas or ultrapure water to cool a polishing pad supported by the platen.

14. The substrate processing apparatus of claim 12, wherein an axis of the steam nozzle aligns with a rotation direction of the platen with respect to a top down view, and wherein an angle formed between the steam nozzle and a surface of the platen is greater than 300 and less than 90 with respect to a side view.

15. The substrate processing apparatus of claim 12, further comprising a plate-shaped shutter connected to a lower surface of the steam bar and configured to change a spraying direction of the steam, wherein the shutter includes: a first shutter region connected to the steam bar and extending in the second direction; and a second shutter region spaced apart from the first shutter region in a third direction perpendicular to the first direction and the second direction and movable between the steam bar and the platen.

16. The substrate processing apparatus of claim 15, wherein a level of the lower surface of the steam nozzle is higher than a level of an upper surface of the shutter, and wherein the shutter is configured to spray the steam in an angle greater than 0 and less than 900 with respect to a surface of the platen.

17. The substrate processing apparatus of claim 12, further comprising: a controller electrically connected to the steam bar power supply; and a surface potential meter configured to measure a surface potential of a polishing pad supported by the platen or the slurry, wherein the surface potential meter is configured to transmit a surface potential data of the polishing pad or the slurry to the controller, and wherein the controller configured to control the steam bar power supply by using the surface potential data received from the surface potential meter.

18. A substrate processing apparatus comprising: a disc-shaped polishing pad configured to polish the substrate and rotate about an axis extending in a first direction; a polishing head supporting the substrate and positioned on the polishing pad; and a slurry arm configured to supply a slurry onto the polishing pad, the slurry arm including: a slurry arm body disposed on the polishing pad and extending in a horizontal direction, wherein the slurry arm body includes a slurry nozzle configured to spray a slurry; a steam bar combined with the slurry arm body and including a steam nozzle configured to spray steam; a steam bar power supply electrically connected to the steam bar; and a plate-shaped shutter connected to the bottom of the steam bar, wherein one side of the shutter is connected to the steam bar and fixed to the steam bar, and wherein another side of the shutter is configured to move away from the steam bar.

19. The substrate processing apparatus of claim 18, wherein an angle formed between the steam nozzle and a surface of the disc-shaped polishing pad is greater than 300 and less than 90 with respect to a side view, and wherein a rotation direction of the polishing pad is the same as a direction of the steam sprayed by the steam nozzle.

20. The substrate processing apparatus of claim 18, wherein the substrate processing apparatus further includes a slurry arm driver configured to move the slurry arm.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Example embodiments will be more clearly understood from the following brief description taken in conjunction with the accompanying drawings. The accompanying drawings represent non-limiting, example embodiments as described herein.

[0015] FIG. 1 is a perspective view illustrating a substrate processing apparatus according to embodiments of the inventive concept.

[0016] FIG. 2 is a cross-sectional view illustrating a substrate processing apparatus according to embodiments of the inventive concept.

[0017] FIG. 3 is a perspective view illustrating a slurry arm according to embodiments of the inventive concept.

[0018] FIG. 4 is a cross-sectional view illustrating a slurry arm according to embodiments of the inventive concept.

[0019] FIG. 5 is a bottom view illustrating a slurry arm according to embodiments of the inventive concept.

[0020] FIG. 6 is a front view illustrating a polishing pad and a slurry arm according to embodiments of the inventive concept.

[0021] FIG. 7 is a front view illustrating a polishing pad and a slurry arm according to embodiments of the inventive concept.

[0022] FIG. 8 is a front view illustrating a polishing pad and a slurry arm according to embodiments of the inventive concept.

[0023] FIG. 9 is a cross-sectional view illustrating a slurry arm according to embodiments of the inventive concept.

[0024] FIG. 10 is a perspective view illustrating a substrate processing apparatus including a slurry arm driving unit according to embodiments of the inventive concept.

[0025] FIG. 11 is a perspective view illustrating a substrate processing apparatus including a slurry arm driving unit according to embodiments of the inventive concept.

[0026] FIG. 12 is a perspective view illustrating a substrate processing apparatus including a slurry arm cleaning unit according to embodiments of the inventive concept.

[0027] FIG. 13 is a perspective view illustrating a substrate processing apparatus including a slurry arm cleaning unit according to embodiments of the inventive concept.

[0028] FIG. 14 is a perspective view illustrating a slurry arm including a shutter according to embodiments of the inventive concept.

[0029] FIG. 15 is a front view illustrating a slurry arm according to embodiments of the inventive concept.

[0030] FIG. 16 is a front view illustrating a polishing pad and a slurry arm according to embodiments of the inventive concept.

[0031] FIG. 17 is a flowchart illustrating a method of processing a substrate according to embodiments of the inventive concept.

DETAILED DESCRIPTION

[0032] Hereinafter, embodiments of the inventive concept will be described with reference to the attached drawings. The same reference numerals may refer to the same elements throughout the specification.

[0033] Hereinafter, D1 may be referred to as a first direction, D2 crossing the first direction D1 may be referred to as a second direction, and D3 crossing each of the first direction D1 and the second direction D2 may be referred to as a third direction. The first direction D1 may be referred to as an upward direction, and the direction opposite to the first direction D1 may be referred to as a downward direction. The first direction D1 and the direction opposite to the first direction D1 may be referred to as a vertical direction. Additionally, each of the second direction D2 and the third direction D3 may be referred to as a horizontal direction.

[0034] FIG. 1 is a perspective view illustrating a substrate processing apparatus ST according to embodiments of the inventive concept, and FIG. 2 is a cross-sectional view illustrating the substrate processing apparatus ST according to embodiments of the inventive concept.

[0035] Referring to FIG. 1, a substrate processing apparatus ST may be provided. A substrate processing apparatus ST may refer to a chemical mechanical polishing apparatus. A substrate W processing process may include a substrate W polishing process. However, it is not limited thereto. In this specification, for convenience of explanation, the substrate W processing process may be referred to as a substrate W polishing process. The substrate processing apparatus ST may polish one side of the substrate W. The term substrate W used in this specification may refer to a silicon (Si) wafer, but is not limited thereto. The substrate processing apparatus ST may include a polishing pad 71, a platen 73, a conditioner 1, a slurry arm 3, a polishing head 5, a central controller 2, and a surface potential measurement unit 4

[0036] The polishing pad 71 may have a disk shape. The polishing pad 71 may be disposed on an upper surface of a platen 73. More specifically, a lower surface of the polishing pad 71 may be in contact with the upper surface of the platen 73. A rotation center of the polishing pad 71 may be disposed on the same line as a rotation center of the platen 73. The polishing pad 71 may polish the substrate W. The polishing pad 71 may rotate. Referring to FIG. 2, the polishing pad 71 may rotate about (or rotate around) a central axis AX1 extending in the first direction D1. An upper surface of the rotating polishing pad 71 may be in contact with the substrate W and may polish a lower surface of the substrate W. The polishing pad 71 may be divided into a plurality of regions, but is not limited thereto.

[0037] The platen 73 may support the polishing pad 71. The platen 73 may rotate the polishing pad 71. More specifically, the platen 73 may be rotated about (or rotate around) a central axis AX1 by a driving unit or the like to rotate the polishing pad 71. When the polishing pad 71 has a disk shape, the platen 73 may also have a disk shape. As the platen 73 rotates, the polishing pad 71 rotates and the substrate W may be polished.

[0038] The conditioner 1 may polish a portion of the polishing pad 71. The conditioner 1 may be in selective contact with the upper surface of the polishing pad 71. While the polishing pad 71 is rotating, the conditioner 1 may be in contact with the upper surface of the polishing pad 71. By polishing by the conditioner 1, a state of the upper surface of the polishing pad 71 may be changed while the polishing process for the substrate W is in progress. For example, the conditioner 1 may improve the condition of the polishing pad 71 by polishing the polishing pad 71 itself. The conditioner 1 may rotate independently of the platen 73. A relative rotational speed of the conditioner 1 with respect to the platen 73 may be variously changed over time. A relative position of the conditioner 1 on the platen 73 may be variously changed over time. More specifically, the conditioner 1 may move horizontally on the polishing pad 71. The conditioner 1 may move upward from a point where a lower surface of the conditioner 1 is in contact with the polishing pad 71.

[0039] The slurry arm 3 may supply a slurry to the polishing pad 71. The slurry arm 3 may supply a slurry SL (e.g., see FIG. 6) on the platen 73. More specifically, the slurry arm 3 may supply the slurry SL to an upper surface of the polishing pad 71 such that the polishing process on the substrate W proceeds smoothly. The slurry SL may include nano-sized abrasive powder dispersed in a chemical reaction solution. The slurry SL may include an abrasive that enhances the polishing of the substrate, ultrapure water, and additives that accelerate the polishing of a specific layer material. The slurry arm 3 may be spaced apart from the polishing pad 71. The slurry arm 3 will be described in detail later.

[0040] The polishing head 5 may support and/or rotate the substrate W. More specifically, the polishing head 5 may place the substrate W on the polishing pad 71 such that one side of the substrate W faces the polishing pad 71. The polishing head 5 may rotate independently of the platen 73. A relative rotational speed of the polishing head 5 with respect to the platen 73 may be variously changed over time. A relative position of the polishing head 5 on the platen 73 may be variously changed over time. The polishing head 5 may move horizontally on the polishing pad 71. The polishing head 5 may move upward from a point where lower surfaces of the substrate W and a retainer ring 55 are in contact with the polishing pad 71. Referring to FIGS. 1 and 2, the polishing head 5 may include a head support member 51, a polishing head body 53, and a retainer ring 55.

[0041] The head support member 51 may place the substrate W at a certain position on the polishing pad 71. The substrate W may be polished on the polishing pad 71. The head support member 51 may be combined on the polishing head body 53.

[0042] The polishing head body 53 may support the substrate W. For example, the retainer ring 55 and the substrate W may be combined with a lower surface of the polishing head body 53. More specifically, the polishing head body 53 may adsorb the substrate W to a lower surface thereof using vacuum pressure. To this end, the polishing head body 53 may include a porous structure exposed on the lower surface. The head support member 51 may be combined with an upper surface of the polishing head body 53. The polishing head body 53 may include a pressure member capable of applying pressure to the substrate W. The pressure member may include several zones capable of applying pressure in a vertical direction to the substrate W. Each zone of the pressure member may have different pressures that are capable of being applied to the substrate W for each zone. The pressure member may control the pressure that is capable of being applied to the substrate W for each zone. However, the structure of the polishing head body 53 is not limited thereto. The polishing head body 53 may further include other components for supporting the substrate W.

[0043] The retainer ring 55 may support the substrate W. The retainer ring 55 may surround a circumference of the substrate W. The retainer ring 55 may be combined with the polishing head body 53. More specifically, an upper surface of the retainer ring 55 may be in contact with the polishing head body 53. The upper surface of the retainer ring 55 may be combined with the polishing head body 53. The retainer ring 55 may provide a slurry groove. The slurry groove may be recessed upward from a lower surface of the retainer ring 55 toward an upper surface of the retainer ring 55. The slurry grooves may have a straight or curved shape. The slurry SL may flow into and be discharged from the substrate W through the slurry groove.

[0044] FIG. 3 is a perspective view illustrating a slurry arm 3 according to embodiments of the inventive concept, FIG. 4 is a cross-sectional view illustrating the slurry arm 3 according to embodiments of the inventive concept, and FIG. 5 is a bottom view illustrating the slurry arm 3 according to embodiments of the inventive concept.

[0045] The slurry arm 3 may include a slurry arm body 31, a steam bar 33, and a steam bar power supply 35 (e.g., see FIG. 1).

[0046] The slurry arm body 31 may support the steam bar 33. The slurry arm body 31 may be disposed on the platen 73. The slurry arm body 31 may be positioned on the polishing pad 71. The slurry arm body 31 may be parallel to the polishing pad 71. The slurry arm body 31 may extend in a horizontal direction. The slurry arm body 31 may extend in a second direction D2 perpendicular to the first direction D1. Referring to FIG. 5, the slurry arm body 31 may include a pad cooling unit 311 and a slurry nozzle 313. The pad cooling unit 311 (also referred to as a pad sprayer) may include a cooling nozzle. The pad cooling unit 311 may comprise one or more sprayers. The sprayers may spray inert gas or ultrapure water to cool the polishing pad 71. The slurry nozzle 313 may spray the slurry SL toward the polishing pad 71. A plurality of slurry nozzles 313 may be provided.

[0047] The steam bar 33 may be combined with the slurry arm body 31. The steam bar 33 may be connected to the slurry arm body 31. The steam bar 33 may be supported by the slurry arm body 31. The steam bar 33 may spray water vapor. More specifically, the steam bar 33 may spray the water vapor toward the polishing pad 71. The steam bar 33 may include a steam bar body 331 and a steam nozzle 333. The steam nozzle 333 may be combined with the slurry arm body 31. The steam nozzle 333 may penetrate the steam bar body 331. The steam nozzle 333 may extend in a straight line. The steam nozzle 333 may spray water vapor (i.e., steam). The steam nozzle 333 may extend toward the platen 73. The steam nozzle 333 will be described in detail later.

[0048] The steam bar power supply 35 may apply a voltage to the steam bar 33 such that the steam bar 33 is capable of having an electric charge. The steam bar power supply 35 may charge the steam bar 33. The steam bar power supply 35 may include a power source and a connection member. The power source may store power to be supplied to the steam bar 33. The power source may supply power to the steam bar 33. The connector may connect the power source and the steam bar 33. The connector may include a conductor. A voltage that the steam bar power supply 35 applying to the steam bar may be 1500V to 1500V.

[0049] The surface potential meter 4 (also referred to as a surface potential measurement unit), e.g., a voltmeter, may measure a surface potential of the polishing pad 71 supported by the platen 73. The surface potential meter 4 may measure a surface potential of the slurry SL on the polishing pad 71. Hereinafter, in this specification, the surface potential of the polishing pad 71 may be the same as the surface potential of the slurry SL.

[0050] The central controller 2 may be electrically connected to the steam bar power supply 35. The central controller 2 may receive surface potential data of the polishing pad 71 or the slurry SL from the surface potential meter 4. The central controller 2 may control the steam bar power supply 35 using the surface potential data received from the surface potential meter 4. The central controller 2 may provide feedback to the steam bar power supply 35 using surface potential data. For example, when the surface potential of the slurry SL is positive (+), the central controller 2 may charge the steam bar 33 into positive (+) type using the steam bar power supply 35. When the surface potential of the slurry SL is negative (), the central controller 2 may charge the steam bar 33 into negative () type using the steam bar power supply 35. The central controller 2 may control the voltage applied by the steam bar power supply 35 to the steam bar based on the surface potential data of the slurry SL.

[0051] FIG. 6 is a front view illustrating a polishing pad 71 and a slurry arm 3 according to embodiments of the inventive concept, FIG. 7 is a front view illustrating the polishing pad 71 and the slurry arm 3 according to embodiments of the inventive concept, and FIG. 8 is a front view illustrating the polishing pad 71 and the slurry arm 3 according to embodiments of the inventive concept.

[0052] Referring to FIG. 6, the steam bar 33 may be charged by the steam bar power supply 35. The steam bar power supply 35 is capable of supplying a voltage to the steam bar 33, thereby charging the steam bar with the same type of a charging type of the slurry. For example, when the slurry SL has a positive (+) charge, the steam bar 33 may be charged positively (+) by the steam bar power supply 35. However, the charging state of the steam bar 33 is not limited thereto. When the slurry SL has a negative charge, the steam bar 33 may be charged with a negative charge by the steam bar power supply 35. The steam bar 33 has the same charge as the slurry SL, thereby preventing the slurry SL from sticking to the steam bar 33. The steam nozzle 333 may extend vertically toward the polishing pad 71. More specifically, an angle formed between the steam nozzle 333 and the steam bar body 331 may be 90. A first angle A1 formed between the steam nozzle 333 and the lower surface of the steam bar 33 may be 90. However, the angle formed by the steam nozzle 333 and the steam bar body 331 is not limited thereto. Referring to FIGS. 7 and 8, the steam nozzle 333 may be tilted and extended toward the polishing pad 71. More specifically, the first angle A1 may be 30 to 90. A direction in which the steam nozzle 333 is inclined may be the same as a rotation direction of the polishing pad 71 and the platen 73. For example, when the polishing pad 71 rotates clockwise, the steam nozzle 333 may be tilted in the rotation direction of the polishing pad 71. In an embodiment of the inventive concept, with respect to a top down view, the axis of the steam nozzle 333 (e.g., along the direction of the internal passage (at the nozzle outlet) within the nozzle providing the steam which may correspond to the average direction of the spray provided by the nozzle) may align with the rotation direction of the platen (at the location over which the nozzle is positioned). With respect to a side view, the angle formed between the axis of the steam nozzle 333 and a surface of the platen (or the polishing pad) may be in the range of 300 and 90.

[0053] The rotation direction of the polishing pad 71 may be the same as a direction of the steam sprayed by the steam nozzle 333. As the steam nozzle 333 is inclined in the rotation direction of the polishing pad 71, the steam may be sprayed in the same direction as the rotation direction of the polishing pad 71. As a result, the slurry SL may be prevented from bouncing and attaching to the steam bar 33.

[0054] FIG. 9 is a cross-sectional view illustrating a slurry arm according to embodiments of the inventive concept.

[0055] Referring to FIG. 9, the steam bar 33 may further include a filter 335. The filter 335 may be connected to a lower end of the steam nozzle 333. The filter 335 may protect the steam nozzle 333 from the outside. The filter 335 may be a polymer material. For example, the filter 335 may include or be formed of one of polyamide, polyester, and polypropylene. The slurry SL may be prevented from entering the steam nozzle 333 by the filter 335. The filter 335 may prevent the slurry SL from adhering to the steam bar 33.

[0056] FIG. 10 is a perspective view illustrating a substrate processing apparatus ST including a slurry arm driving unit 6 (also referred to as a slurry arm driver (e.g., a motor)) according to embodiments of the inventive concept, FIG. 11 is a perspective view illustrating the substrate processing apparatus ST including the slurry arm driver 6 according to embodiments of the inventive concept, FIG. 12 is a perspective view illustrating the substrate processing apparatus ST including a slurry arm cleaning unit 8 according to embodiments of the inventive concept, and FIG. 13 is a perspective view illustrating the substrate processing apparatus ST including the slurry arm cleaning unit 8 (also referred to as a cleaning sprayer) according to embodiments of the inventive concept.

[0057] Referring to FIGS. 10 and 11, the substrate processing apparatus ST may further include a slurry arm driver 6 capable of moving the slurry arm 3. The slurry arm driver 6 may move the slurry arm 3 up and down. A distance between the slurry arm 3 and the polishing pad 71 may be adjusted by the slurry arm driver 6 moving the slurry arm 3. A distance between the slurry arm 3 and the platen 73 may be adjusted by the slurry arm driver 6. The slurry arm driver 6 may rotate the slurry arm 3. The slurry arm driver 6 may rotate the slurry arm 3 to move the slurry arm 3 on the polishing pad 71 outwards from the polishing pad 71.

[0058] The slurry arm driver 6 may be electrically connected to the central controller 2. The central controller 2 may operate the slurry arm driver 6 based on data obtained from the surface potential meter 4. For example, when a repulsive force applied between the slurry SL and the charged steam arm 3 is strong, the central controller 2 may use the slurry arm driver 6 to move the slurry arm 3 away from the polishing pad 71. When the repulsive force applied between the slurry SL and the charged slurry arm (3) is weak, the central controller 2 may use the slurry arm driver 6 to bring the slurry arm 3 closer to the polishing pad 71. The central controller 2 may prevent the slurry SL from attaching to the slurry arm 3 using the steam bar power supply 35 and the slurry arm driver 6.

[0059] Referring to FIGS. 12 and 13, the substrate processing apparatus ST may further include a cleaning sprayer 8, which may comprise one or more sprayers. The sprayers of the cleaning sprayer 8 may spray a cleaning liquid from underneath the steam bar 33 toward a lower surface of the steam bar 33. The cleaning sprayer 8 may be disposed outside the platen 73. The slurry arm 3 may be rotationally moved out of the platen 73 by the slurry arm driver 6. The slurry arm 3 may be disposed above the cleaning sprayer 8 by the slurry arm driver 6.

[0060] FIG. 14 is a perspective view illustrating a slurry arm 3 including a shutter 37 according to embodiments of the inventive concept, FIG. 15 is a front view illustrating a slurry arm 3 according to embodiments of the inventive concept, and FIG. 16 is a front view illustrating a polishing pad 71 and a slurry arm 3 according to embodiments of the inventive concept.

[0061] The slurry arm 3 may further include a shutter 37. The shutter 37 may have a plate shape. However, the inventive concept is not limited thereto. The shutter may be configured to change a spraying direction of the steam. The shutter 37 may spray steam diagonally. The shutter 37 may spray steam obliquely toward the polishing pad 71 regardless of an inclination of the steam nozzle 333. The shutter 37 may be connected to the steam bar 33. A level of a lower surface of the steam nozzle 333 may be higher than a level of an upper surface of the shutter 37. One side of the shutter 37 may be connected to the steam bar 33. The one side of the shutter 37 may be fixed to the steam bar 33. Another side of the shutter 37 may move away from the steam bar 33 toward the platen 73. More specifically, the shutter 37 may include a first shutter region 371 and a second shutter region 373. The first shutter region 371 may be connected to the steam bar 33. The first shutter region 371 may extend in the second direction. The second shutter region 373 may be spaced apart from the first shutter region 371 in a third direction D3 perpendicular to the first direction D1 and the second direction D2. The second shutter region 373 may move between the steam bar 33 and the polishing pad 71. The second shutter region 373 may move between the steam bar 33 and the platen 73. As the second shutter region 373 moves between the steam bar 33 and the platen 73, an inclination of the shutter 37 may be changed. A second angle A2 formed by the shutter 37 and the steam bar 33 may be 0 to 90. Referring to FIG. 15, when the second angle A2 is 0, the shutter 37 may block the steam nozzle 333 from the outside. When the second angle A2 is 0, steam may not be sprayed onto the polishing pad 71. The slurry SL may be prevented from flowing into the steam bar 33 by the shutter 37. Referring to FIG. 16, the angle at which steam is sprayed onto the polishing pad 71 may be adjusted by adjusting the inclination of the shutter 37 regardless of the inclination of the steam nozzle 333. In an embodiment of the inventive concept, the other side of the shutter 37 may be capable of being moved away from the steam bar 33 toward the platen 73, thereby being configured to spray steam diagonally in an angle (i.e., the angle A2) with respect to a surface of the platen 73. The angle with respect to the surface of the platen 73 is greater than 0 and less than 90.

[0062] FIG. 17 is a flowchart illustrating a method of processing a substrate according to embodiments of the inventive concept.

[0063] Referring to FIG. 17, a method of processing a substrate S may include placing the substrate W in the substrate processing apparatus ST in S1 and polishing the substrate W in S2. The polishing of the substrate W in S2 may include spraying a slurry SL from the slurry nozzle 313 toward the polishing pad 71 in S21, charging the steam bar 33 by the steam bar power supply 35 in S22 and rotating the polishing pad 71 and the polishing head 5 in S23. The polishing of the substrate W in S2 may further include adjusting a distance between the slurry arm 3 and the polishing pad 71 by the slurry arm driver 6.

[0064] According to the substrate processing apparatus and the method of processing the substrate using the same according to embodiments of the inventive concept, the slurry may be prevented from adhering to the steam bar by charging the steam bar. The steam bar may be charged positively (+) or negatively () by the steam bar power supply. The charging state of the steam bar may be variously changed depending on the charging state of the slurry. The steam bar may be charged to the same sign as the slurry. As the steam bar and the slurry are charged to the same sign, a repulsive force may occur between the steam bar and the slurry. The slurry may be prevented from sticking to the steam bar by the repulsive force between the steam bar and the slurry. When the slurry sticks to the steam bar, the steam bar and steam nozzle may become contaminated. When the slurry sticks to the steam bar, it can detrimentally affect the spraying of steam. When the slurry sticks to the steam bar and solidifies and the solidified slurry falls from the steam bar, it may have a negative effect on the substrate.

[0065] According to the substrate processing apparatus and the method of processing the substrate using the same according to embodiments of the inventive concept, the repulsive force between the steam bar and the slurry or the steam bar and the polishing pad may be adjusted. A degree of charging of the steam bar may be adjusted by the steam bar power supply. The steam bar power supply may adjust the degree of charging of the steam bar by adjusting the voltage applied to the steam bar. When the degree of charging of the steam bar becomes stronger, the repulsive force between the steam bar and the slurry may become stronger. When the degree of charging of the steam bar decreases, the repulsive force between the steam bar and the slurry may weaken. When the slurry is weakly charged, the steam bar power supply may increase the voltage applied to the steam bar. When the slurry is highly charged, the steam bar power supply may lower the voltage applied to the steam bar. The slurry arm driver may adjust the distance between the slurry arm and the polishing pad. The repulsive force between the steam bar and the slurry may be adjusted by the slurry arm driver. When the repulsive force between the steam bar and the slurry is strong, the distance between the slurry arm and the polishing pad may be increased by the slurry arm driver. When the repulsive force between the steam bar and the slurry is weak, the distance between the slurry arm and the polishing pad may be reduced by the slurry arm driver. Feedback may be provided to the steam bar power supply by the central controller. The central controller may control the steam bar power supply to keep the repulsive force between the steam bar and polishing pad constant or changing.

[0066] According to the substrate processing apparatus and the method of processing the substrate using the same according to embodiments of the inventive concept, the spray angle of steam may be adjusted. The steam nozzle may extend straight or at an angle. The angle formed between the steam nozzle and the steam bar may be 0 to 90. As the steam nozzle extends obliquely, the steam may be sprayed obliquely. By using the shutter, the steam may be sprayed obliquely regardless of the inclination of the steam nozzle. The angle formed between the shutter and the steam bar may be 0 to 90. The shutter may spray steam at an angle toward the polishing pad. The shutter may prevent the slurry on the polishing pad from sticking to the steam bar.

[0067] According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the steam bar may be charged by the steam bar power supply.

[0068] According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the distance between the steam bar and the polishing pad may be adjusted.

[0069] According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the steam may be sprayed obliquely.

[0070] According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the steam nozzle inclined may be provided to spray the steam diagonally.

[0071] According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the shutter whose inclination may be adjusted to spray steam diagonally may be included.

[0072] While embodiments are described above, a person skilled in the art may understand that many modifications and variations are made without departing from the spirit and scope of the inventive concept defined in the following claims. Accordingly, the example embodiments of the inventive concept should be considered in all respects as illustrative and not restrictive, with the spirit and scope of the inventive concept being indicated by the appended claims.