Device having color resists pattern and method for manufacturing the same
11656552 · 2023-05-23
Inventors
Cpc classification
G03F7/105
PHYSICS
International classification
G03F7/105
PHYSICS
Abstract
A device having color resists pattern and method for manufacturing are disclosed. The device includes a substrate, at least two color resist layers. The at least color resist layers are formed on the curved and construct a visible pattern, wherein at a boundary of the color resist pattern, the at least two color resist layers form a ramp structure and each of the at least two color resist layers contacts the substrate; and the ramp structure is formed in sequential order by one exposure process, one removal process and one baking process of the at least two color resist layers.
Claims
1. A device having a color resist pattern, comprising: a substrate; and at least two color resist layers formed on a concavely curved surface of the substrate, constructing a visible pattern together; wherein at a boundary of the color resist pattern, each and every color resist layer directly contacts the substrate, wherein the boundary of the color resist pattern contacts a flat surface of the substrate, wherein the at least two color resist layers are stacked on top of each other on the substrate, wherein the substrate is a ceramic substrate.
2. The device according to claim 1, wherein a thickness of each of the at least two color resist layers is ranged from 0.5 micron to 30 micron.
3. The device according to claim 1, wherein a linewidth of the color resist pattern is greater than 10 microns.
4. The device of claim 1, wherein the at least two color resist layers further comprises a topmost layer disposed on the at least two color resist layers and wherein the topmost layer is a transparent resist layer.
5. The device according to claim 1, wherein a hardness of each of the at least two cured color resist layers is ranged from 2H to 4H.
6. The device according to claim 1, comprising two color resist layers, wherein thicknesses of the two color resist layers are 3.63 micron and 1.79 micron respectively.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The detailed structure, operating principle and effects of the present disclosure will now be described in more details hereinafter with reference to the accompanying drawings that show various embodiments of the present disclosure as follows.
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(8) Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Therefore, it is to be understood that the foregoing is illustrative of exemplary embodiments and is not to be construed as limited to the specific embodiments disclosed, and that modifications to the disclosed exemplary embodiments, as well as other exemplary embodiments, are intended to be included within the scope of the appended claims. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art. The relative proportions and ratios of elements in the drawings may be exaggerated or diminished in size for the sake of clarity and convenience in the drawings, and such arbitrary proportions are only illustrative and not limiting in any way. The same reference numbers are used in the drawings and the description to refer to the same or like parts.
(9) It will be understood that, although the terms ‘first’, ‘second’, ‘third’, etc., may be used herein to describe various elements, these elements should not be limited by these teens. The terms are used only for the purpose of distinguishing one component from another component. Thus, a first element discussed below could be termed a second element without departing from the teachings of embodiments. As used herein, the term “or” includes any and all combinations of one or more of the associated listed items.
(10) According to the embodiment of the present disclosure, the present disclosure provides a device having color resists and method for manufacturing method the same. In the embodiment, by manner of forming multiple layers of color resist first and performing the exposure process, the pattern can be manufactured on planar or curved shell body with advantages of high-resolution, low cost and production capacity.
(11) Please refer to
(12) In a step 101, a color resist composite layer, which includes at least two color resist layers, is formed on the substrate, and the at least two color resist layers are formed in sequential order. The color resist composite layer can be formed by a spraying manner, so as to enable the each of color resist layers to have better uniformity. The present disclosure is not limited to the spraying manner, and the manners of inkjet, transfer printing, and screen printing and so on can also be applied to form the color resist composite layer. Preferably, the substrate can be planar substrate, curved substrate or 3D substrate. Furthermore, the substrate can be glass substrate, plastic substrate, or ceramic substrate.
(13) The embodiment shown in
(14) In other words, the color resists of the present disclosure mean the color resists with various colors, such as white, red, orange, yellow, green, blue, indigo, purple, black, or transparent (colorless). The operator can select the color from the color series with which the color resist can be formed. The colors with various color tones can be created by multiple color layers. In addition, the photoresist material can be positive photoresist or negative photoresist, to achieve the desired technical effect of the present disclosure. Each of the color resist layers has a thickness ranged from 0.5 micron to 30 micron.
(15) Please refer to
(16) In s step 103, the color resist composite layer is preheated. The preheating procedure can remove the solvent remained in the photoresist, so as to reduce the flowability and improve uniformity of the color resist composite layer without being deformed easily. The preheating process is performed under a temperature ranged from 70° C. to 120° C., and the temperature and time for reheating can be adjusted upon property of the material.
(17) In a step 105, an exposure process is performed by using a mask having a predetermined pattern. The pattern of the mask is the pattern desired to be formed on the substrate, such as an annular rectangular frame pattern of the screen for the smart device. When the substrate is a curved surface, the pattern is an annular rectangular curved surface. This kind of pattern has a linewidth larger than 10 microns; in other words, a resolution up to 10 micron.
(18) Please refer to
(19) In a step 107: the non-pattern part of the color resist composite layer is removed, so that a color resist pattern is formed. This step is aforesaid development step, that is, the developer is formulated for the photoresist material of the color resist. The unexposed color resist layers 211, 221 and 231 are processed by the developer to be removed. The exposure process and removal process are parts of the lithography process which is a well-known technology of semiconductor process, so their detailed descriptions are omitted. After these two processes are completed, the predetermined pattern of the present disclosure can be obtained. After this step, the unexposed color resist layers 211, 221 and 231 are removed and only the exposed color resist layers 212, 222 and 232 are remained, as shown in
(20) In a step 109, the color resist composite layer is cured. In this embodiment, the low-temperature baking method is used to cure the predetermined pattern by a temperature ranged from 100° C. to 180° C. The baking time of the baking process is adjusted upon actual situation, for example, upon properties, thickness or desired hardness of the cured color resist layer. The hardness of the cured color resist layer is ranged from 2H to 4H.
(21) During the baking process of the step 109, because of the multilayer structure of the color resist layer applied in the present disclosure, the color resists may be flowable during the baking process to form a special ramp structure, so that the topmost color resist may contact the substrate. As shown in
(22) The first feature of the present disclosure is that the desired pattern can be generated by just performing the exposure process and removal process on the multilayer of the color resist composite layer, so as to significantly reduce the production time and cost. In addition, the photolithography applied in the present disclosure can also improve the resolution of the pattern.
(23) Please refer to
(24) The embodiment shown in
(25) Please refer to
(26) Please refer to
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(28) According to the present disclosure, the method of forming the color resist pattern can be applied to manufacture a device with color resist pattern, and the device includes: a substrate; at least two color resist layers formed on the substrate. Both of the at least two color resist layers construct a visible pattern together, that is, the pattern formed by the least two color resist layers has visible appearance. By manner of applying the photolithography process, the pattern of the present disclosure has high resolution and uses less material. In addition, at the boundary of the pattern, the at least two color resist layers (that is, the color resist composite layer) form the ramp structure and each contacts the substrate.
(29) The above-mentioned descriptions represent merely the exemplary embodiment of the present disclosure, without any intention to limit the scope of the present disclosure thereto. Various equivalent changes, alternations or modifications based on the claims of present disclosure are all consequently viewed as being embraced by the scope of the present disclosure.