Quantum Detector with Vertically Stacked Structure

Abstract

A quantum detector is provided with a vertically stacked structure. The detector comprises a conductive substrate, a plurality of quantum detectors configured on the conductive substrate, and a lower electrode. Each of the quantum detectors comprises an electron transport layer (GaAs), a three-dimensional topological insulator layer (Sb-doping Bi.sub.2Te.sub.3), a light-absorbing layer (e.g. having excellent graphene quantum dot (ZnO)), and an upper electrode. The lower electrode is disposed between first and second upper electrodes of the first and second quantum detectors that are adjacent to each other to provide a vertical series of electrical coupling. Thus, the present invention provides a novel photodetector with a vertical structure. With the preparation of a topological material through high-power impulsed magnetron sputtering (having a special surface state of an extremely-low energy gap), the mobility of electron-hole-pair carriers is effectively improved. The whole device achieves low energy consumption and extended use life.

Claims

1. A quantum detector with a vertically stacked structure, comprising a conductive substrate; a plurality of quantum detectors configured on said conductive substrate, wherein each of said quantum detectors comprises an electron transport layer configured on said conductive substrate; a three-dimensional (3D) topological insulator layer obtained through high-power impulse magnetron sputtering (HiPIMS) and configured on said electron transport layer; an absorbing layer configured on said 3D topological insulator layer; and an upper electrode configured on said absorbing layer; and a lower electrode configured on said conductive substrate, wherein said lower electrode is configured between a first and a second ones of said upper electrodes of a first and second ones of said quantum detectors that are adjacent to each other to provide parallel connections of electrical coupling.

2. The quantum detector according to claim 1, wherein said conductive substrate is a transparent conductive glass coated with an indium tin oxide (ITO) film.

3. The quantum detector according to claim 1, wherein said electron transport layer is of a photosensitive material.

4. The quantum detector according to claim 3, wherein said photosensitive material is gallium arsenide (GaAs) made into said electron transport layer through metal-organic chemical vapor deposition (MOCVD).

5. The quantum detector according to claim 1, wherein said 3D topological insulator layer is of a photosensitive material.

6. The quantum detector according to claim 5, wherein said photosensitive material is bismuth telluride doped with antimony (S.sub.b-doping Bi.sub.2Te.sub.3) to be made into said 3D topological insulator layer through HiPIMS, and has a surface state of an extremely low energy gap.

7. The quantum detector according to claim 1, wherein said HiPIMS has an operating condition comprising a frequency of 100350 kilo-hertz (kHz), a power of 2050 watts (W), an air pressure of 310.sup.3210.sup.2 Torr, and a temperature of 150220 degrees Celsius ( C.).

8. The quantum detector according to claim 1, wherein said absorbing layer is of a material selected from a group consisting of graphene quantum dot and molybdenum disulfide (MoS.sub.2) quantum dot.

9. The quantum detector according to claim 8, wherein said graphene quantum dot is of zinc oxide (ZnO) made into graphene ZnO quantum dot through chemical synthesis.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The present invention will be better understood from the following detailed description of the preferred embodiment according to the present invention, taken in conjunction with the accompanying drawings, in which

[0008] FIG. 1 is the perspective view showing the preferred embodiment according to the present invention;

[0009] FIG. 2 is the view showing the A-A cross section of FIG. 1; and

[0010] FIG. 3 is the view showing the parallelly-connected currents totaled through the vertically stacked structure.

DESCRIPTION OF THE PREFERRED EMBODIMENT

[0011] The following description of the preferred embodiment is provided to understand the features and the structures of the present invention.

[0012] Please refer to FIG. 1 to FIG. 3, which are a perspective view showing a preferred embodiment according to the present invention; a view showing an A-A cross section of FIG. 1; and a view showing parallelly-connected currents totaled through a vertically stacked structure. As shown in the figures, the present invention is a quantum detector with a vertically stacked structure 100, comprising a conductive substrate 1; a plurality of quantum detectors 2 configured on the conductive substrate 1; and a lower electrode 3.

[0013] Each quantum detector 2a,2b of the quantum detectors 2 comprises an electron transport layer 21a,21b configured on the conductive substrate 1; a three-dimensional (3D) topological insulator layer 22a,22b fabricated through high-power impulse magnetron sputtering (HiPIMS) to be configured on the electron transport layer 21a,21b; a light-absorbing layer 23a,23b configured on the 3D topological insulating layer 22a,22b; and an upper electrode 24a,24b configured on the absorbing layer 23a,23b.

[0014] The lower electrode 3 is configured between a first and a second upper electrodes 24a,24b of a first and a second quantum detectors 2a,2b that are adjacent to each other as shown in FIG. 1 and FIG. 2. Thus, a novel quantum detector with a vertically stacked structure 100 is obtained.

[0015] In a state-of-use, the conductive substrate 1 is of a transparent conductive glass coated with an indium tin oxide (ITO) film.

[0016] In a state-of-use, the electron transport layer 21a,21b is of a photosensitive material of gallium arsenide (GaAs), which is fabricated through metal-organic chemical vapor deposition (MOCVD).

[0017] In a state-of-use, the 3D topological insulator layer 22a,22b is of a photosensitive material of antimony (Sb)-doping bismuth telluride (Bi.sub.2Te.sub.3), which is fabricated through HiPIMS to obtain a highly conductive surface having a surface state of a very low energy-gap (Eg) for a high-speed transmission.

[0018] In a state-of-use, the 3D topological insulator layer 22a,22b is a technical feature, which is prepared by the low-cost HiPIMS of using a required single crystal structure (XRD is available) as Eg<<1 eV. As compared with all traditional commercial products prepared through molecular beam epitaxy (MBE) with very expensive cost while mass production is unavailable, the present invention adjusts different spectrums to obtain high-quality spectra. The HiPIMS used in the present invention has an operation condition of a frequency of 100350 kilo-hertz (kHz), a power of 2050 watts (W), an air pressure of 310.sup.3210.sup.2 Torr, and a temperature of 150220 degrees Celsius ( C.). This method eliminates the need for thermal annealing, and, hence, the process is fast with energy consumption effectively saved.

[0019] In a state-of-use, the 3D topological insulator layer 22a,22b is fabricated through the HiPIMS to control different impulse frequencies for achieving a single crystal structure, where another target can also be set up to be co-plated at the same time for targeting at a Bi/Te ratio making up a general deficiency of Te for obtaining a high-quality quantum material easily.

[0020] In a state-of-use, a low-cost plasma coating device is used to finish doping by installing just another target gun, which is conformed to a single manufacture without breaking vacuum or replacing multiple layers; and the overall yield is improved.

[0021] In a state-of-use, the absorbing layer 23a,23b is of excellent graphene quantum dot or molybdenum disulfide (MoS.sub.2) quantum dot.

[0022] In a state-of-use, the graphene quantum dot is obtained through chemical synthesis, whose main function is to increase absorption spectrum and the quantum material is zinc oxide (ZnO) for forming graphene ZnO quantum dot.

[0023] In a state-of-use, the upper electrode 24a,24b is a silver electrode, [0024] where the 3D topological insulator layer 22a,22b is fabricated through the low-cost HiPIMS without thermal annealing for a fast overall process and an effectively-reduced energy consumption. With the coordination of connecting the first and second quantum detectors in parallel through vertically-structured currents (I.sub.1, I.sub.2) as shown in FIG. 3, the total current is stacked (i.e. I.sub.total=I.sub.1+I.sub.2). On being shone by light, a larger current is generated and dark current is reduced to improve sensitivity to light and responsibility to light source. Hence, with the novel structure, the ability of accurately measuring low-intensity light is improved for the whole device.

[0025] To sum up, the present invention is a quantum detector with a vertically stacked structure, where a novel photodetector is provided with a vertical structure; and, with the preparation of a topological material through HiPIMS (having a special surface state of an extremely low Eg), the mobility of electron-hole-pair carriers is effectively improved; and the whole device achieves low energy consumption and extended use life.

[0026] The preferred embodiment herein disclosed is not intended to unnecessarily limit the scope of the invention. Therefore, simple modifications or variations belonging to the equivalent of the scope of the claims and the instructions disclosed herein for a patent are all within the scope of the present invention.