Method for interconnecting photovoltaic cells and photovoltaic cell assembly
12419132 · 2025-09-16
Assignee
Inventors
Cpc classification
H10F10/167
ELECTRICITY
Y02E10/541
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
Abstract
The present disclosure related to a method for interconnecting photovoltaic cells in order to form a photovoltaic cells assembly is provided. The method comprises the steps of providing a first photovoltaic cell comprising a first surface, a second surface, a first edge, and a second edge, arranging a conductive wire on the first surface of the first photovoltaic cell according to a certain pattern, and attaching the conductive wire to the first surface of the first photovoltaic cell with the aid of a first non-conductive yarn by stitching in the area of the first edge of the first photovoltaic cell according to a first stitch type.
Claims
1. A method for interconnecting photovoltaic cells in order to form a photovoltaic cells assembly, the method comprising the steps of: providing a first photovoltaic cell comprising a first surface, a second surface, a first edge, and a second edge, arranging a conductive wire on the first surface of the first photovoltaic cell according to a certain pattern, and attaching the conductive wire to the first surface of the first photovoltaic cell with the aid of a first non-conductive yarn by stitching in an area of the first edge of the first photovoltaic cell according to a first stitch type.
2. The method according to claim 1, wherein the method comprises the step of additionally attaching the conductive wire to the first surface of the first photovoltaic cell with the aid of a second non-conductive yarn by stitching in an area of the second edge of the first photovoltaic cell according to a second stitch type.
3. The method according to claim 2, wherein the first photovoltaic cell comprises or is a thin-film cell selected from the group consisting of: a copper indium gallium selenide cell or a copper indium selenide cell or a cadmium telluride cell or a perovskite cell or an amorphous silicon cell, and/or wherein the first edge and the second edge are parallel or approximately parallel with respect to each other, and/or wherein the conductive wire comprises at least one of copper, nickel, steel, stainless steel, aluminium, carbon fiber, or any combination thereof, and/or wherein the certain pattern comprises at least one of a zig-zag pattern, a sine-shaped pattern, a pattern being similar to a sine shape, or any combination thereof, and/or wherein the first non-conductive yarn comprises at least one of polyolefin, nylon, or the combination thereof, and/or wherein the second non-conductive yarn comprises at least one of polyolefin, nylon, or the combination thereof.
4. The method of claim 2, wherein for arranging the conductive wire, a swinging arm or beam is used, and/or wherein for stitching, a respective machine stitching presser foot and a corresponding needle are used.
5. The method of claim 2, wherein stitching according to the second stitch type is configured to pull a loop being fed through a hole in the first photovoltaic cell with the aid of the second non-conductive yarn over an edge of the first photovoltaic cell along the second surface of the first photovoltaic cell, and/or wherein the second stitch type comprises or is an ISO #501 stitch or an over-edge stitch or an overlock stitch or an over-edge chainstitch.
6. The method of claim 5, wherein the over-edge chainstitch is a one-thread over-edge chainstitch.
7. The method of claim 5, wherein for arranging the conductive wire, a swinging arm or beam is used, and/or wherein for stitching, a respective machine stitching presser foot and a corresponding needle are used.
8. The method of claim 7, wherein the first photovoltaic cell comprises or is a thin-film cell and/or wherein the first edge and the second edge are parallel or approximately parallel with respect to each other, and/or wherein the conductive wire comprises at least one of copper, nickel, stainless steel, aluminum, carbon fiber, or any combination thereof, and/or wherein the certain pattern comprises at least one of a zig-zag pattern, a sine-shaped pattern, a pattern being similar to a sine shape, or any combination thereof, and/or wherein the first non-conductive yarn comprises at least one of polyolefin, nylon, or the combination thereof, and/or wherein, the second non-conductive yarn comprises at least one of polyolefin, nylon, or the combination thereof.
9. The method of claim 8, wherein the thin-film cell is selected from the group consisting of a copper indium gallium selenide cell; a copper indium selenide cell; a cadmium telluride cell; a perovskite cell; or an amorphous silicon cell.
10. The method of claim 8, wherein for arranging the conductive wire, a swinging arm or beam is used, and/or wherein for stitching, a respective machine stitching presser foot and a corresponding needle are used.
11. The method of claim 1, wherein for arranging the conductive wire, a swinging arm or beam is used, and/or wherein for stitching, a respective machine stitching presser foot and a corresponding needle are used.
12. The method of claim 1, wherein the conductive wire is arranged in such a manner that at least a part of the conductive wire extends over the first surface of the first photovoltaic cell in the area of the second edge of the first photovoltaic cell.
13. The method of claim 12, wherein the at least a part of the conductive wire is arranged in a wire loop or a wire loop pattern.
14. The method of claim 1, wherein stitching according to the first stitch type is configured in a manner that the first non-conductive yarn passes through the first photovoltaic cell and/or interloops with itself on the second surface of the first photovoltaic cell, and/or wherein the first stitch type comprises or is an ISO #101 stitch or a chainstitch.
15. The method of claim 14, wherein the method comprises the step of cutting the conductive wire if the certain pattern covers the first surface of the first photovoltaic cell according to a predefined manner, and/or wherein the method comprises the step of cutting the first non-conductive yarn if the certain pattern covers the first surface of the first photovoltaic cell according to a predefined manner, and/or wherein, the method comprises the step of cutting the second non-conductive yarn if the certain pattern covers the first surface of the first photovoltaic cell according to a predefined manner.
16. The method of claim 1, wherein the method comprises the steps of: providing a second photovoltaic cell comprising a first surface, a second surface, a first edge, and a second edge, and aligning the second photovoltaic cell and the first photovoltaic cell on the basis of the second edge of the first photovoltaic cell and the first edge of the second photovoltaic cell, wherein, the second photovoltaic cell is aligned in such a manner that a surface of the second photovoltaic cell covers the part of the conductive wire extending over the first surface of the first photovoltaic cell.
17. The of claim 1, wherein the method comprises the step of repeating at least a part of the method steps according to claim 1 with respect to at least one further photovoltaic cell.
18. The method of claim 17, wherein a wire loop or a wire loop pattern of the conductive wire extending over the first surface of the first photovoltaic cell is simultaneously attached to a second surface of a second photovoltaic cell through attaching a conductive wire to a first surface of the second photovoltaic cell with the aid of the first non-conductive yarn by stitching in the area of the first edge of the second photovoltaic cell according to the first stitch type.
19. The method of claim 18, wherein the method comprises the step of encapsulating the photovoltaic cells assembly with the aid of an encapsulating material such as a thermoplastic non-reactive polyolefin material.
20. The method according to claim 19, wherein the melting point of the encapsulating material is below 180 degrees Celsius.
21. The method of claim 20, wherein the melting point of the encapsulating material is between 140 and 145 degrees Celsius.
22. The method of claim 19, wherein the melting point of the first non-conductive yarn is in the same range as or equal to the melting point of the encapsulating material, and/or wherein the melting point of the second non-conductive yarn is in the same range as or equal to the melting point of the encapsulating material.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) Exemplary embodiments of the invention are now further explained with respect to the drawings by way of example only, and not for limitation. In the drawings:
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DETAILED DESCRIPTION
(15) Firstly, before one or more example embodiments will be explained with respect to the figures, some general aspects of the invention are described in the following:
(16) Amongst other carrier materials (for instance, polymer sheets), steel foil is used for making copper indium gallium selenide (CIGS) solar modules by depositing active CIGS layers on the surface. To customize voltage and current, the foil is cut, and the individual resulting CIGS cells are connected in a series or parallel fashion.
(17) Due to uncontrolled occurrence of deposition defects, the cut individual cells may be binned according to electrical performance and appearance to allow higher process yields and better performance.
(18) The lack of efficient solutions for the connection of individual cut CIGS cells, high interconnection costs, limited process flexibility and the lack of possibilities to perform binning after cutting the foil is currently hindering a wide application of CIGS in building-integrated photovoltaic (BIPV) or other photovoltaic markets.
(19) For instance, CIGS cells can be interconnected. The CIGS cells may be based on a CIGS stack deposited on a metal (conductive) carrier, having a front (transparent) contact and a back contact (conductive carrier).
(20) In some examples, the carrier may be a metal steel foil with a thickness of +/50 m and 5 m CIGS cell stack is deposited on the top surface, with a transparent conductive surface layer.
(21) It is noted that the interconnection method can be used for parallel or series interconnection of individual cell strips, or interconnection of strings of cell strips. It is further noted that the cells may not be overlapping (no shingling) to avoid loss of inactive (shaded) area.
(22) The interconnection may be achieved by using a conductive yarn or wire (for instance, Nickel metal), and a non-conductive polymer yarn (could be thermoplastic, and potentially optically transparent). It is further noted that the method may utilize stitching and/or broidering of wires/yarn.
(23) Moreover, CIGS foil can be produced on roll in large continuous foil processing. Active layers are deposited on a polymer or metal foil. Inherently also defects are introduced, locally compromising electrical performance (i.e. recombination, shunts or the like). To allow maximal use of the foil, defected areas should be removed. Cutting the foil in strips of a specific size (i.e. providing a specific electrical current under illumination), allows for binning of the CIGS cell strips according to their electrical performance and appearance.
(24) The strips are connected in a series configuration (to increase voltage) to create cell strings, or in parallel (to increase current). With embodiment described in greater detail below, the following benefits can be achieved: a reliable technology allowing (limited) compensation of thermal stress of long cell strings; a cheap method involving a very limited diversity of materials, and very few materials; a method relying on mechanical process technologies with low machine investment (stitching and embroidering with swinging arm for yarn guidance), material and process costs; an efficient and cost-effective solution for the connection of individual cells, involving low interconnection costs and a large process flexibility and allowing to perform binning; and an interconnection that is not based on shingling (i.e. not based on partially overlapping CIGS cells), avoiding inactive areas (higher CIGS cell surface yield).
(25) Furthermore, for the sake of completeness, the following possible preliminary method or production steps should be mentioned: for instance, as a starting point, the foil is cut in pieces (cell strips) of approximately 1 cm to 5 cm50 cm; and as an exemplary second step, binning is performed after measurement of a respective current-voltage-curve or after a photoluminescence measurement or an electroluminescence measurement.
(26) In what follows, it is assumed that cell strips or cells of a specific performance and appearance are selected (from binning). The cell strips or cells are aligned along the long side of the cell strips or cells near to each other (so not overlapping or shingled) to create an interconnection of the top conductive transparent layer of a cell with the bottom contact (=steel foil carrier) of the neighbouring cell. To do so, a first cell is provided or positioned, respectively.
(27) Now, with respect to the figures.
(28) It is further noted that it might be advantageous if the method comprises the step of additionally attaching the conductive wire to the first surface of the first photovoltaic cell with the aid of a second non-conductive yarn by stitching in the area of the second edge of the first photovoltaic cell according to a second stitch type.
(29) In this context, it might be advantageous if stitching according to the second stitch type is configured to pull a loop being fed through a hole in the first photovoltaic cell with the aid of the second non-conductive yarn to an edge, such as the second edge, of the first photovoltaic cell such as along the second surface of the first photovoltaic cell.
(30) In addition to this or as an alternative, the second stitch type may comprise or be an ISO #501 stitch or an over-edge stitch or an overlook stitch or an over-edge chainstitch, such as a one-thread over-edge chainstitch. As already mentioned, the first photovoltaic cell may comprise or be a thin-film cell such as a copper indium gallium selenide (CIGS) cell.
(31) It is noted that the second stitch type can additionally or alternatively comprise or be an ISO #101 stitch or a chainstitch, in particular for the embodiments with cell edge insulation by a transparent insulating foil (which will be described below).
(32) In some embodiments there is no need for wrapping the second non-conductive yarn around the second edge of the first photovoltaic cell for obtaining edge insulation because the edge insulation is obtained by providing the insulating foil.
(33) Additionally or alternatively, the first edge and the second edge may be parallel or approximately parallel with respect to each other. In addition to this or as an alternative, the conductive wire may comprise at least one of copper, nickel, steel, such as stainless steel, aluminum, carbon fiber, or any combination thereof.
(34) In some embodiments, the certain pattern may comprise at least one of a zig-zag pattern, a sine-shaped pattern, a pattern being similar to a sine shape, or any combination thereof. For example, the first non-conductive yarn may comprise polyolefin and/or nylon. Additionally or alternatively, the second non-conductive yarn may comprise polyolefin and/or nylon.
(35) Furthermore, it might be advantageous if for arranging the conductive wire, a swinging arm or beam is used. In addition to this or as an alternative, for stitching, a respective machine stitching presser foot and a corresponding needle may be used. Moreover, the conductive wire may be arranged in such a manner that at least a part, a wire loop or a wire loop pattern, of the conductive wire extends the first surface (for example beyond an edge such as beyond the second edge) of the first photovoltaic cell such as in the area of the second edge of the first photovoltaic cell.
(36) It is noted that it might be advantageous if stitching according to the first stitch type is configured in a manner that the first non-conductive yarn passes through the first photovoltaic cell and/or interloops with itself on the second surface of the first photovoltaic cell. In addition to this or as an alternative, the first stitch type comprises or is an ISO #101 stitch or a chainstitch.
(37) It is further noted that the method may comprise the step of cutting the conductive wire if the certain pattern covers the first surface of the first photovoltaic cell according to a predefined manner.
(38) Additionally or alternatively, the method may comprise the steps of providing a second photovoltaic cell comprising a first surface, a second surface, a first edge, and a second edge, and aligning the second photovoltaic cell and the first photovoltaic cell on the basis of the second edge of the first photovoltaic cell and the first edge of the second photovoltaic cell. In this context, a second photovoltaic cell may be aligned in such a manner that a surface of the second photovoltaic cell covers the part, the wire loop or the wire loop pattern, of the conductive wire extending the first surface (for example beyond an edge such as beyond the second edge) of the first photovoltaic cell.
(39) It might be advantageous if the method comprises the step of repeating at least a part of the method steps described above with respect to at least one further photovoltaic cell. In this context, a wire loop or a wire loop pattern of the conductive wire extending the first surface (for example beyond an edge such as beyond the second edge) of the first photovoltaic cell may simultaneously be attached to a second surface of a second photovoltaic cell through attaching a conductive wire, such as a second conductive wire, to a first surface of the second photovoltaic cell with the aid of the first non-conductive yarn by stitching in the area of the first edge of the second photovoltaic cell according to the first stitch type.
(40) In this context of the second photovoltaic cell, it is noted that the first non-conductive yarn may be another one than for the first photovoltaic cell.
(41) Furthermore, the method may comprise the step of encapsulating the photovoltaic cells assembly with the aid of an encapsulating material, such as a thermoplastic material and/or a thermoplastic non-reactive material that may be a thermoplastic non-reactive polyolefin material. In this context, it might be particularly advantageous if the melting point of the encapsulating material is below 180 degrees Celsius, such as between 130 and 150 degrees Celsius.
(42) Moreover, the melting point of the first non-conductive yarn may be in the same range as or equal to the melting point of the encapsulating material. In addition to this or as an alternative, the melting point of the second non-conductive yarn may be in the same range as or equal to the melting point of the encapsulating material. Furthermore, it is noted that with the aid of at least a part of the foregoing method steps, a photovoltaic cells assembly can be produced.
(43) It is further noted that different exemplary snapshots with respect to the formation of a photovoltaic cells assembly in the context of a further example embodiment are depicted with the aid of
(44) According to
(45) In accordance with
(46) The stitch is applied using the machine stitching presser foot 3 and a corresponding needle. The needle pierces a hole through the CIGS cell 20 and simultaneously feeds the non-conductive yarn 5a through the hole. When the needle retracts, a yarn loop is left behind, which is pulled along the backside surface 22b of the CIGS cell 20 to the area where the needle will feed through a subsequent loop through the CIGS cell 20 (and yarn loop).
(47) Alternatively, making holes through the cells (such as at the first edge and at the second edge) before stitching may be advantageous. Such holes can be made simultaneously with the stitching, for example, by using 2 needles: a first needle to punch a hole, immediately followed by a second needle to do the stitching as already mentioned above. As an alternative, the holes can be made beforehand, for example, by punching or by etching.
(48) This stitch may be a stitch ISO #101 class; it is formed by one needle thread (yarn) passing through the CIGS cell 20 and interlooping with itself on the underside of the seam. Meanwhile, the swinging beam 1 progresses along the cell 20 from right (right edge 21c) to left (left edge 21), together with both presser feet 3, 4 and corresponding needles (or alternatively, vice-versa).
(49) As the Ni-wire 2 is now fixed (attached) to the front surface 22a of the cell 20, the arm 1 swings to the top edge 21b of the CIGS cell 20. It is attached by a polymer yarn 5b to the CIGS cell 20 using a stitch ISO #501 class (1-thread Overedge chainstitch) as illustrated by
(50) This stitch has the feature to pull the loop that is fed through a hole in the CIGS cell 20, to the side edge (e.g., the second edge 21b) of the cell 20 along the underside surface 22b of the cell 20. It is there pulled up along the edge 21b. The non-conductive polymer yarn 5b is now wrapped around the edge 21b of the CIGS cell 20, and simultaneously it is attaching the Ni-wire 2 to the front surface 22a of the CIGS cell 20. It is noted that the ISO #501 class over edge or overlock stitch type is formed with one needle and 1 looper thread with this thread passing round the edge of the CIGS strip being sewn.
(51) The swinging arm or beam 1 extends outside the surface area 22a such as beyond the second edge 21b of the CIGS cell 20, before returning to the top side of the cell. This results in a Ni-wire loop that is extending beyond the second edge 21b of the CIGS cell 20. As the wire 2 crosses the path of the top ISO #501 class stitch again, the wire is attached again to the CIGS cell surface.
(52) Continuing its trajectory to the bottom edge 21a of the CIGS cell 20, the Ni-wire 2 crosses the bottom edge ISO #101 class stitch again and is attached to the CIGS cell surface 22a. As such, the zigzag trajectory of the Ni wire 2 is secured on four places on the CIGS cell 20 (two at the top edge 21b, two at the bottom edge 21a) surface per single zigzag cycle of the swinging beam/arm 1. This sequence of sewing and zigzag arm swinging is repeated along the full length of the first CIGS cell 20, from the third edge 21c to the fourth edge 21d, as shown in
(53) Now, with respect to
(54) It is noted that the second cell 30 comprises edges and surfaces being analogously denoted with reference signs 31a-31d, 32a, and 32b with respect to the first cell 20. The top edge 21b of the first cell 20 that is wrapped with the polymer thread/yarn 5b is separated from the second cell bottom edge 31a (yarn 5b may act as a spacer, stitch ISO #501 class); in some examples, this may avoid side contacts causing shunts and/or unwanted electrical contacts between both cell strips 20 and 30.
(55) The stitching sequence of the first step is repeated on the second cell 30 according to
(56) As such, an electrical interconnection may be created between the top transparent layer on the surface of the first CIGS cell strip 20 and the underside metal surface of the second CIGS cell strip 30. Simultaneously, both cell strips 20, 30 are physically attached to each other to create a cell string.
(57) Furthermore, the respective ones of the above-mentioned steps are analogously repeated to create a new roll with exemplarily 60 CIGS strips connected in series. For instance.
(58) It is further noted, that integration of the CIGS cell strings in a photovoltaic module vary based on the final application. In what follows, a possible example of a short process is described to create a module consisting of a transparent front sheet and a back sheet as illustrated by
(59) In accordance with
(60) An encapsulant sheet with glass fibre filling may provide a limited coefficent of thermal expansion (CTE) compared to a non-reinforced encapsulant sheet.
(61) Furthermore, it offers the ability to better secure the Ni-wires on the CIGS cell surfaces and avoids Ni-wire shifting/rolling during lamination (which would compromise electrical contact quality between the transparent conductive layer of the CIGS cell and the Ni-wire). The encapsulant may be consisting of thermoplastic non-reactive polyolefin material compatible with CIGS cell technology, or alternatively an encapsulant should be used that is compatible with CIGS cell technology.
(62) Strings of interconnected CIGS cells are aligned along one another on the encapsulant sheet 8, and interconnected (via e.g. welding, soldering, conductive adhesives etc.) with bussing ribbons. Suitable terminal ribbons are foreseen at the beginning and end of the CIGS series interconnected cells/strings. Furthermore, a second (glass-fibre reinforced) encapsulant sheet 7 may be applied on the CIGS cell string area, and the stack may be covered with a back substrate 6 (for instance, back sheet, glass or the like).
(63) Moreover, during a vacuum lamination step, the module layer stack may be heated to a temperature (for instance, 155-165 degrees Celsius) that is above the melting temperature of the encapsulant material (melting point of 130-150 degrees Celsius) to allow full embedding of the CIGS strings, and to avoid any cavities (but below 180 C. to avoid deterioration of the CIGS layers).
(64) The thermoplastic yarn material will melt as melting temperature is in the same range as the melting temperature of the encapsulant. The corresponding refractive index may be similar to the encapsulant material, improving aesthetical appearance (no yarns visible after lamination). Furthermore, this may result in an example embodiment as illustrated by
(65) Now, with respect to
(66) In comparison with the example embodiment illustrated by the snapshots according to
(67) For example, this configuration will isolate in a later stage the conductive wire from the side wall at the second edge of the CIGS strip. This will thereby also separate and isolate in a later stage the second edge of the CIGS strip from a first edge of a further CIGS strip to be provided next to it. The transparent foil may be made from or comprises a thermo-plastic material such as a polyolefin material or a thermoset material. The transparent foil may be a multilayer foil, such as for example a foil comprising an optically transparent polyurethane layer and a thermoset layer or a thermoplastic layer such as a polyolefin layer or an acrylic layer. By slightly heating this material (for instance, 60 to 120 degrees Celsius, for example 70 to 110 degrees Celsius) it will become sticky and stay fixed onto the CIGS strip.
(68) It is noted that the following steps are explained by analogy with the exemplary embodiment illustrated by the snapshots of
(69) In this context, it is noted that the pieces or cell strips, respectively, can also be up to 4-5 cm50 cm (or other width, for instance, 30 cm). Advantageously, a piece of 4-530 cm would match with the current of a half silicon cell (i.e., 5A). This would allow to use conventional half-cell silicon invertors for modules made out of these CIGS cells.
(70) Furthermore, for instance, the following steps may result in
(71) When the beam swings to the bottom side of the cell, the Ni-wire 2 is attached with a polymer yarn 5a (non-conductive, potentially thermoplastic, optically transparent, similar refractive index as module encapsulant material used for embedding process, and with a similar or higher melting point temperature) to the CIGS cell surface such as using a stitch ISO #101 class (chainstitch).
(72) The stitch is applied using a machine stitching presser foot and a corresponding needle. The needle pierces a hole through the CIGS cell 20 and simultaneously feeds the non-conductive yarn 5a through the hole. When the needle retracts, a yarn loop is left behind, which is pulled along the backside surface of the CIGS cell 20 to the area where the needle will feed through a subsequent loop through the CIGS cell 20 (and yarn loop).
(73) This stitch may be a stitch ISO #101 class; it is formed by one needle thread (yarn) 5a passing through the CIGS cell 20 and interlooping with itself on the underside of the seam. Meanwhile, the swinging beam progresses along the cell 20 from right to left (on the drawing). As the Ni-wire 2 is now fixed (attached) to the front side of the cell 20, the arm swings to the top side of the CIGS cell 20 over the non-conductive transparent foil 23. Because this foil is sticky, the Ni-wire 2 will stick where it is placed onto the non-conductive transparent foil 23. Eventually a slightly pressing roller or bar could fix the Ni-wire 2 tighter onto the non-conductive transparent sheet 23.
(74) The swinging arm or beam extends outside the surface area of the CIGS cell 20, before returning to the top side of the cell 20. This results in a Ni-wire loop that is extending out of the CIGS cell 20. Continuing its trajectory to the bottom side of the CIGS cell 20, the Ni-wire 2 crosses the bottom side ISO #101 class stitch again and is attached to the CIGS cell surface.
(75) As such, the zigzag trajectory of the Ni-wire 2 may be secured on the sticky part of the transparent foil 23 (at the top side of the CIGS cell 20) and at two places at the bottom side by the stitch per single zigzag cycle of the swinging beam/arm. This sequence of sewing and zigzag arm swinging is repeated along the full length of the first CIGS cell 20. Once reaching the end, the wires 2 (and yarns 5a) are cut.
(76) Furthermore, and not explicitly illustrated by further snapshots in the context of the example embodiment discussed in connection with the snapshots of
(77) It is further noted that the above-mentioned stitching sequence may be repeated on the second cell. As the path of the stitch ISO #101 class at the bottom side of the second cell strip is also crossing the Ni-wire extending/protruding from the first cell 20 underneath the second cell, this Ni-wire is, simultaneously with the fixing of the second Ni-wire on the top surface of the second CIGS cell strip, attached to the backside surface of the second CIGS cell strip. As such, an electrical interconnection is created between the top transparent layer on the surface of the first CIGS cell strip 20 and the underside metal surface of the second CIGS cell strip. Simultaneously, both cell strips are physically attached to each other to create a cell string. It also simultaneously will fix the non-conductive foil 23 to the backside of the CIGS cell.
(78) Finally, with respect to
(79) In comparison with the example embodiment illustrated by the snapshots according to
(80) It is noted that the following steps are explained by analogy with the example embodiment illustrated by the snapshots of
(81) Furthermore, for instance, the following steps may result in
(82) When the beam swings to the bottom side of the cell 20 the Ni-wire 2 is attached with a polymer yarn 5a, 5a (non-conductive, potentially thermoplastic, optically transparent, similar refractive index as module encapsulant material used for embedding process, and with a similar or higher melting point temperature) to the CIGS cell surface using a stitch ISO #101 class (chainstitch).
(83) As it can further be seen from
(84) The stitch is applied using the respective machine stitching presser foot and a corresponding needle. The needle pierces a hole through the CIGS cell 20 and simultaneously feeds the non-conductive yarn 5a, 5a through the hole. When the needle retracts, a yarn loop is left behind, which is pulled along the backside surface of the CIGS cell 20 to the area where the needle will feed through a subsequent loop through the CIGS cell 20 (and yarn loop).
(85) This stitch may be a stitch ISO #101 class; it is formed by one needle thread (yarn 5a or 5a, respectively) passing through the CIGS cell 20 and interlooping with itself on the underside of the seam. Meanwhile, the swinging beam progresses along the cell 20 from right to left (on the drawing), together with both presser feet and corresponding needles (or alternatively, vice-versa).
(86) As the Ni-wire 2 is now fixed to the front side of the cell 20, the arm swings to the top side of the CIGS cell 20. As already mentioned above, it is attached by the polymer yarn 5a using a stitch ISO #101 class (chainstitch). This will stitch the non-conductive transparent foil 23 and the Ni-wire 2 at the same time together. The Ni-wire 2 will be on top of this non-conductive transparent foil 23.
(87) The swinging arm or beam extends outside the surface area of the CIGS cell 20, before returning to the top side of the cell 20. This results in a Ni-wire loop that is beyond the second edge of the CIGS cell 20 and will lay up onto the non-conductive transparent foil 23. As the wire 2 crosses the path of the top ISO #101 class stitch again, the wire 2 is attached again to the transparent foil 23.
(88) Continuing its trajectory to the bottom side of the CIGS cell 20, the Ni-wire 2 crosses the bottom side ISO #101 class stitch again and is attached to the CIGS cell surface.
(89) As such, the zigzag trajectory of the Ni-wire 2 may be secured on four places on the CIGS cell 20 (two at the top side, two at the bottom side) surface per single zigzag cycle of the swinging beam/arm. At the top side, the non-conductive transparent foil 23 may be stitched between the Ni-wire 2 and the CIGS cell 20. This sequence of sewing and zigzag arm swinging is repeated along the full length of the first CIGS cell 20. Once reaching the end, the wires 2 and/or yarns 5a, 5a are cut.
(90) Furthermore, and not explicitly shown in the context of this embodiment, a new CIGS cell strip may be aligned and placed on the Ni-wire part that is extending beyond the top side of the first CIGS cell 20. The top side border of the first cell 20 is isolated from the second cell bottom side border by the non-conductive transparent foil 23; this avoids side contacts causing shunts or unwanted electrical contacts between both cell strips.
(91) The stitching sequence of the above-mentioned step may be repeated on the second cell. As the path of the stitch ISO #101 class at the bottom side of the second cell strip is also crossing the Ni-wire extending/protruding from the first cell 20 underneath the second cell, this Ni-wire is, simultaneously with the fixing of the second Ni-wire on the top surface of the second CIGS cell strip, attached to the backside surface of the second CIGS cell strip. As such, an electrical interconnection is created between the top transparent layer on the surface of the first CIGS cell strip 20 and the underside metal surface of the second CIGS cell strip. Simultaneously, both cell strips are physically attached to each other to create a cell string.
(92) It is noted that the pattern of the conductive wire can be different for different connected cells. In other words, a different conductive wire pattern may be used for different cell strips within a string. For instance, this may be done for creating a visual effect and/or for aesthetic reasons.
(93) While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. Numerous changes to the disclosed embodiments can be made in accordance with the disclosure herein without departing from the spirit or scope of the disclosure. Thus, the breadth and scope of the present disclosure should not be limited by any of the above described embodiments. Rather, the scope of the invention should be defined in accordance with the following claims and their equivalents.
(94) Although the invention has been illustrated and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art upon the reading and understanding of this specification and the included drawings. In addition, while a particular feature may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application.