RESIST COMPOSITION, DRY FILM RESIST, METHOD FOR PRODUCING DRY FILM RESIST, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING PLATED OBJECT

Abstract

A resist composition, a dry film resist, a method for producing a dry film resist, a method for forming a resist pattern, and a method for producing a plated object are described. The resist composition includes a resin (A1) having a group represented by formula (1), a resin (A2) including a structural unit represented by formula (a3), and an acid generator (B1).

##STR00001##

Claims

1. A resist composition comprising: a resin (A1) having a group represented by formula (1); a resin (A2) including a structural unit represented by formula (a3); and an acid generator (B), ##STR00075## wherein, R.sup.a1 and R.sup.a2 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, R.sup.a3 represents a hydrocarbon group having 1 to 20 carbon atoms, or R.sup.a1 represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, and R.sup.a2 and R.sup.a3 are bonded to each other to form a heterocycle having 3 to 20 carbon atoms together with the carbon atom to which R.sup.a2 is bonded and X to which R.sup.a3 is bonded, and a methylene group included in the hydrocarbon group and the heterocycle is optionally replaced with an oxygen atom or a sulfur atom, X represents an oxygen atom or a sulfur atom, na represents 0 or 1, * represents a binding site, ##STR00076## wherein, R.sup.a31 and R.sup.a32 each independently represent an alkyl group having 1 to 12 carbon atoms, and a methylene group included in the alkyl group is optionally replaced with an oxygen atom, and o, p, q, and r each independently represent 0 or a positive number less than 1, and at least one of o and p represents a positive number less than 1, and when o is 0, p and q each represent a positive number less than 1, and when p is 0, o and r each represent a positive number less than 1, and when q is 0, o and r each represent a positive number less than 1, and when r is 0, p and q each represent a positive number less than 1, provided that o+p+q+r=1 is satisfied.

2. The resist composition according to claim 1, wherein the resin (A1) includes a structural unit represented by formula (a1-1) or formula (a1-2): ##STR00077## wherein, R.sup.a1, R.sup.a2, and R.sup.a3 have a same meaning as in formula (1), R.sup.a4 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or a haloalkyl group having 1 to 6 carbon atoms, R.sup.a5 represents a halogen atom, a hydroxy group, a carboxy group, an alkyl group having 1 to 6 carbon atoms, a haloalkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxyalkyl group having 2 to 12 carbon atoms, an alkylcarbonyl group having 2 to 4 carbon atoms, an alkylcarbonyloxy group having 2 to 4 carbon atoms, an acryloyloxy group, or a methacryloyloxy group, A.sup.a11 represents a single bond or an alkanediyl group having 1 to 12 carbon atoms, and CH.sub.2 included in the alkanediyl group is optionally replaced with O, CO, or NR.sup.a6, R.sup.a6 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, na1A represents an integer of 1 to 5, and when na1A is 2 or more, a plurality of groups in parentheses are optionally the same or different from each other, na11A represents an integer of 0 to 4, and when na11A is 2 or more, a plurality of R.sup.a5s are optionally the same or different from each other, provided that 1na1A+na11A5 is satisfied, na1B represents an integer of 1 to 4, and when na1B is 2 or more, a plurality of groups in parentheses are optionally the same or different from each other, and na11B represents an integer of 0 to 3, and when na11B is 2 or more, a plurality of R.sup.a5s are optionally the same or different from each other, provided that 1na1B+na11B4 is satisfied.

3. The resist composition according to claim 2, wherein the resin (A1) includes a structural unit represented by formula (a1-1).

4. The resist composition according to claim 1, wherein the resin (A1) further includes a structural unit represented by formula (a2-1): ##STR00078## wherein, R.sup.a24 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or a haloalkyl group having 1 to 6 carbon atoms, R.sup.a25 represents a halogen atom, a carboxy group, an alkyl group having 1 to 6 carbon atoms, a haloalkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxyalkyl group having 2 to 12 carbon atoms, an alkoxyalkoxy group having 2 to 12 carbon atoms, an alkylcarbonyl group having 2 to 4 carbon atoms, an alkylcarbonyloxy group having 2 to 4 carbon atoms, an acryloyloxy group, or a methacryloyloxy group, A.sup.a21 represents a single bond or an alkanediyl group having 1 to 12 carbon atoms, and CH.sub.2 included in the alkanediyl group is optionally replaced with O, CO, or NR.sup.a26, R.sup.a26 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, na2 represents an integer of 1 to 5, and na21 represents an integer of 0 to 4, and satisfies 1na2+na215, and when na21 is 2 or more, a plurality of R.sup.a25s are optionally the same or different from each other.

5. The resist composition according to claim 1, wherein 0.050+p0.30 is satisfied, and q and r each represent a positive number less than 1.

6. The resist composition according to claim 1, further comprising a novolak resin (A3).

7. The resist composition according to claim 1, further comprising an adhesion improver (E), wherein the adhesion improver (E) includes at least one selected from the group consisting of a sulfur-containing compound, an aromatic hydroxy compound, a benzotriazole-based compound, a triazine-based compound, and a silicon-containing compound.

8. A dry film resist comprising: a support film; and a resist composition layer stacked on the support film and including the resist composition according to claim 1.

9. A method for producing a dry film resist, comprising: (1a) a step of applying the resist composition according to claim 1 to a support film to form a photoresist composition layer; and (2a) a step of drying the resist composition layer.

10. A pattern forming method comprising: (1b) a step of applying the resist composition according to claim 1 onto a substrate and drying the resist composition to form a resist composition layer; (2b) a step of exposing the resist composition layer to ultraviolet light having a wavelength of 500 nm or less; and (3b) a step of developing the exposed resist composition layer without heating.

11. A pattern forming method comprising: (1c) a step of stacking the dry film resist according to claim 8 on a substrate; (2c) a step of peeling at least a portion of the support film from the resist composition layer and exposing the resist composition layer to ultraviolet light having a wavelength of 500 nm or less; and (3c) a step of developing the exposed resist composition layer without heating.

12. A method for producing a plated object, comprising: a step of forming a resist pattern on a substrate having a conductive layer using the resist composition according to claim 1 such that a portion of the conductive layer is exposed; a step of forming a plated object using the resist pattern as a mold; and a step of peeling off the resist pattern after forming the plated object.

Description

EXAMPLES

[0466] The present invention will be explained in more detail with reference to Examples. In the Examples, % and parts indicating the content or amount used are based on mass unless otherwise specified.

[0467] The weight average molecular weight is the value determined by gel permeation chromatography under the following conditions. [0468] Apparatus: HLC-8320 GPC (Tosoh Corporation) [0469] Column: TSKgel Multipore HXL-M3+guard column (Tosoh Corporation) Eluent: Tetrahydrofuran [0470] Flow rate: 1.0 mL/min [0471] Detector: RI detector [0472] Column temperature: 40 C. [0473] Injection volume: 100 l [0474] Molecular weight standard: Standard polystyrene

(Tosoh Corporation)

Synthesis Example 1 [Synthesis of Resin A.SUP.1.-1]

[0475] 20 parts of poly-p-hydroxystyrene (S-4P manufactured by Maruzen Petrochemical Co., Ltd.) was dissolved in 240 parts of methyl isobutyl ketone at room temperature and concentrated using an evaporator. The concentrated resin solution and 0.003 parts of p-toluenesulfonic acid dihydrate were added to a four-neck flask equipped with a reflux condenser, stirrer, and thermometer. While the resulting mixture was maintained at 20 to 25 C., 5.05 parts of ethyl vinyl ether was added dropwise to the resulting mixture over 10 minutes. The mixture was stirred at 20 to 25 C. for 2 hours. The resulting reaction mixture was diluted with 200 parts of methyl isobutyl ketone, washed with ion-exchanged water, and subjected to liquid-liquid separation five times. The resulting organic layer was concentrated to 45 parts using an evaporator, and then 150 parts of propylene glycol monomethyl ether acetate was added and concentrated again to provide 78 parts of a propylene glycol monomethyl ether acetate solution of Resin A.sup.1-1 (solid content 29%). Resin A.sup.1-1 is a resin having the following structural units. The weight average molecular weight of Resin A.sup.1-1 was 1.1610.sup.4. The proportion of hydroxy groups in poly-p-hydroxystyrene replaced with ethoxyethoxy groups was 40.9%.

##STR00066##

Synthesis Example 2 [Synthesis of Resin AX1-1]

[0476] 30 parts of methyl isobutyl ketone was charged into a four-neck flask equipped with a stirrer, reflux condenser, and thermometer, nitrogen replacement was completed, and then the temperature was raised to 82 C. A solution of 6 parts of t-butoxystyrene, 12.9 parts of 4-acetoxystyrene (molar ratio of t-butoxystyrene: 4-acetoxystyrene=30:70), and 0.75 parts of azobisisobutyronitrile dissolved in the methyl isobutyl ketone was added dropwise over one hour. Stirring was then continued for 6 hours while maintaining the temperature at 82 C. The reaction solution was cooled, and the resulting reaction solution was poured into a mixed solution of 184 parts of methanol and 61 parts of ion-exchanged water to reprecipitate the resin. After filtration, the resulting resin was dissolved in 40 parts of methyl isobutyl ketone, and 9.7 parts of ethanolamine, 1.94 parts of 4-dimethylaminopyridine, and 20 parts of methanol were added, followed by heating under reflux at 60 C. for 15 hours. After cooling, the mixture was concentrated and 40 parts of methyl isobutyl ketone was added to perform dissolution, and 10 parts of acetic acid and 30 parts of ion-exchanged water were added, stirred, followed by filtration. The resulting solution was poured into a large amount of a mixture of ion-exchanged water and methanol to precipitate the resin, which was then filtered and recovered. 140 parts of propylene glycol monomethyl ether acetate was added to the resulting resin, which was dissolved and concentrated, 70 parts of propylene glycol monomethyl ether acetate was then added and the mixture was concentrated again to provide 45 parts of a propylene glycol monomethyl ether acetate solution of resin AX1-1 (solid content 30%, yield 85%). The weight average molecular weight of resin AX1-1 was 1.3310.sup.4.

##STR00067##

Synthesis Example 3 [Synthesis of Resin A2-1]

[0477] 70 parts of ethyl acetate was added to a four-neck flask equipped with a reflux condenser, stirrer, and thermometer, and the temperature was raised to 55 C., and a mixture of 15 parts of methacrylic acid, 58 parts of ethyl acrylate, 41 parts of methyl methacrylate (molar ratio: methacrylic acid: ethyl acrylate:methyl methacrylate=15:50:35), 3.46 parts of 2,2-azobis (2,4-dimethylvaleronitrile), and 100 parts of ethyl acetate was added dropwise over 2 hours. The mixture was stirred for 3 hours while maintaining the temperature at 50 C. to 55 C. The resulting reaction mixture was cooled to 40 C. or less, diluted with 125 parts of ethyl acetate, and poured into a large amount of a mixture of ion-exchanged water and methanol to precipitate the resin, which was then filtered and recovered. 650 parts of propylene glycol monomethyl ether acetate was added to the obtained resin, which was then dissolved and concentrated, then 650 parts of propylene glycol monomethyl ether acetate was added and the mixture was concentrated again to provide 190 parts of a propylene glycol monomethyl ether acetate solution of Resin A2-1 (solid content 45%, yield 75%). The weight average molecular weight of Resin A2-1 was 3.7910.sup.4.

##STR00068##

Synthesis Example 4 [Synthesis of Resin A2-2]

[0478] 70 parts of ethyl acetate was added to a four-neck flask equipped with a reflux condenser, stirrer, and thermometer, and the temperature was raised to 55 C., and a mixture of 10 parts of methacrylic acid, 58 parts of ethyl acrylate, 47 parts of methyl methacrylate (molar ratio: methacrylic acid: ethyl acrylate:methyl methacrylate=10:50:40), 3.46 parts of 2,2-azobis (2,4-dimethylvaleronitrile), and 100 parts of ethyl acetate was added dropwise over 2 hours. The mixture was stirred for 3 hours while maintaining the temperature at 50 C. to 55 C. The resulting reaction mixture was cooled to 40 C. or less, diluted with 125 parts of ethyl acetate, and poured into a large amount of a mixture of ion-exchanged water and methanol to precipitate the resin, which was then filtered and recovered. 650 parts of propylene glycol monomethyl ether acetate was added to the resulting resin, which was dissolved and concentrated, and then 650 parts of propylene glycol monomethyl ether acetate was added and concentrated again to provide 186 parts of a propylene glycol monomethyl ether acetate solution of Resin A2-2 (solid content 45%, yield 73%). The weight average molecular weight of Resin A2-2 was 3.8510.sup.4.

##STR00069##

Synthesis Example 5 [Synthesis of Resin A2-3]

[0479] 70 parts of ethyl acetate was added to a four-neck flask equipped with a reflux condenser, stirrer, and thermometer, and the temperature was raised to 55 C., and a mixture of 8 parts of methacrylic acid, 58 parts of ethyl acrylate, 49 parts of methyl methacrylate (molar ratio of methacrylic acid: ethyl acrylate:methyl methacrylate=8:50:42), 3.46 parts of 2,2-azobis (2,4-dimethylvaleronitrile), and 100 parts of ethyl acetate was added dropwise over 2 hours. The mixture was stirred for 3 hours while maintaining the temperature at 50 C. to 55 C. The resulting reaction mixture was cooled to 40 C. or less, diluted with 125 parts of ethyl acetate, and poured into a large amount of a mixture of ion-exchanged water and methanol to precipitate the resin, which was then filtered and recovered. 650 parts of propylene glycol monomethyl ether acetate was added to the resulting resin, which was dissolved and concentrated, and then 650 parts of propylene glycol monomethyl ether acetate was added and concentrated again to provide 184 parts of a propylene glycol monomethyl ether acetate solution of Resin A2-3 (solid content 45%, yield 72%). The weight average molecular weight of Resin A2-3 was 3.64 104.

##STR00070##

Synthesis Example 6 [Synthesis of Resin AX2-1]

[0480] 70 parts of ethyl acetate was added to a four-neck flask equipped with a reflux condenser, stirrer, and thermometer, and the temperature was raised to 55 C., and a mixture of 8 parts of acrylic acid, 100 parts of ethyl acrylate (molar ratio of acrylic acid: ethyl acrylate=10:90), 3.31 parts of 2,2-azobis(2,4-dimethylvaleronitrile), and 100 parts of ethyl acetate was added dropwise over 2 hours. The mixture was stirred for 3 hours while maintaining the temperature at 50 C. to 55 C. The resulting reaction mixture was cooled to 40 C. or less, diluted with 110 parts of ethyl acetate, and poured into a large amount of a mixture of ion-exchanged water and methanol to precipitate the resin, which was then filtered and collected. 600 parts of propylene glycol monomethyl ether acetate was added to the obtained resin, which was then dissolved and concentrated, then 600 parts of propylene glycol monomethyl ether acetate was added and the mixture was concentrated again to provide 173 parts of a propylene glycol monomethyl ether acetate solution of resin AX2-1 (solid content 45%, yield 72%). The weight average molecular weight of resin AX2-1 was 6.67 104.

##STR00071##

Synthesis Example 7 [Synthesis of Resin A.SUP.3.-1]

[0481] 413.5 parts of 2,5-xylenol, 103.4 parts of salicylaldehyde, 20.1 parts of p-toluenesulfonic acid, and 826.9 parts of methanol were added to a four-neck flask equipped with a stirrer, reflux condenser, and thermometer, and the temperature was raised to reflux and maintained at that temperature for 4 hours. After cooling, 1320 parts of methyl isobutyl ketone was added and 1075 parts of the solvent were distilled off at normal pressure. 762.7 parts of m-cresol and 29.0 parts of 2-tert-butyl-5-methylphenol were added, the temperature was raised to 65 C., and 678 parts of 37% aqueous formalin solution was added dropwise over 1.5 hours while adjusting the temperature such that the temperature reached 87 C. at the end of the addition. The resulting mixture was maintained at 87 C. for 10 hours, then 1, 115 parts of methyl isobutyl ketone was added, and the mixture was washed by liquid-liquid separation three times with ion-exchanged water. 500 parts of methyl isobutyl ketone was added to the resulting mixture, which was concentrated under reduced pressure until the total amount was 3,435 parts. 3,796 parts of methyl isobutyl ketone and 4, 990 parts of n-heptane were added to the resulting mixture, which was then heated to 60 C. and stirred for 1 hour. Thereafter, liquid-liquid separation was performed and the lower layer including the resin was taken out, diluted with 3, 500 parts of propylene glycol monomethyl ether acetate, and concentrated to provide 1, 690 parts of a propylene glycol monomethyl ether acetate solution of Resin A.sup.3-1 (solid content 43%). The weight average molecular weight of novolak resin A.sup.3-1 was 710.sup.3. In addition, the residual film rate in development with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide was 74%. The residual film rate was measured by the method described in the section <Resin (A2)> of Embodiments for Carrying out Invention.

<Preparation of Resist Composition>

[0482] The components shown in Table 1 were mixed and dissolved to provide a mixture, which was then filtered through a fluororesin filter with a pore size of 15 m to prepare a resist composition.

TABLE-US-00001 TABLE 1 Resist Acid Adhesion composition Resin (A1) Resin (A2) Resin (A3) generator Quencher Solvent improver Composition 1 A1-1 = A2-1 = A3-1 = B-1 = C-1 = D-1 = E-1 = 7.43 parts 2.02 parts 4.05 parts 0.07 parts 0.020 parts 13 parts 0.002 parts Composition 2 A1-1 = A2-1 = A3-1 = B-2 = C-2 = D-1 = E-1 = 7.43 parts 2.02 parts 4.05 parts 0.098 parts 0.012 parts 13 parts 0.002 parts Composition 3 A1-1 = A2-2 = A3-1 = B-1 = C-1 = D-1 = E-1 = 7.43 parts 2.02 parts 4.05 parts 0.07 parts 0.020 parts 13 parts 0.002 parts Composition 4 A1-1 = A2-3 = A3-1 = B-1 = C-1 = D-1 = E-1 = 7.43 parts 2.02 parts 4.05 parts 0.07 parts 0.020 parts 13 parts 0.002 parts Composition 5 A1-1 = A2-1 = A3-1 = B-3 = C-2 = D-1 = E-1 = 7.43 parts 2.02 parts 4.05 parts 0.098 parts 0.012 parts 13 parts 0.002 parts Comparative A1-1 = AX2-1 = A3-1 = B-1 = C-1 = D-1 = E-1 = composition 1 7.43 parts 2.02 parts 4.05 parts 0.07 parts 0.020 parts 13 parts 0.002 parts Comparative AX1-1 = A2-1 = A3-1 = B-1 = C-1 = D-1 = E-1 = composition 2 7.43 parts 2.02 parts 4.05 parts 0.07 parts 0.020 parts 13 parts 0.002 parts <Resin> A1-1: Resin A1-1 AX1-1: Resin AX1-1 A2-1: Resin A2-1 A2-2: Resin A2-2 A2-3: Resin A2-3 AX2-1: Resin AX2-1 A3-1: Resin A3-1

<Acid Generator (B)>

[0483] B-1: N-hydroxynaphthalimide triflate (manufactured by Heraeus Holding GmbH)

##STR00072##

[0484] B-2: Compound represented by the following formula (synthesized by the method described in WO 2016/072049)

##STR00073##

[0485] B-3: Compound represented by the following formula (synthesized by changing (+)-10-camphorsulfonyl chloride to 1-octanesulfonyl chloride in the same manner as described in WO 2016/072049).

##STR00074##

<Quencher (C)>

[0486] C-1:2, 4,5-triphenylimidazole (Tokyo Chemical Industry Co., Ltd.)

[0487] C-2: N, N-dicyclohexylmethylamine (Sigma-Aldrich Co. LLC)

<Solvent (D)>

[0488] D-1: Propylene glycol monomethyl ether acetate

<Creating Dry Film Resist>

[0489] The resist compositions (compositions 1 to 5, comparative compositions 1 and 2) listed in Table 1 were applied using a die coater as the film coater and a polyethylene terephthalate (PET) film (thickness 38 m) as the support film such that the film thickness after drying would be as listed in Table 2, and the film was dried in a temperature-rising oven at 70 C. for 5 minutes and then at 130 C. for 5 minutes. A polyethylene (PE) film was attached as a protective film on the surface of the dry film thus prepared, to provide the dry film resists listed in Table 2.

TABLE-US-00002 TABLE 2 Dry film Resist composition Thickness resist layer (m) Film 1 Composition 1 130 Film 2 Composition 2 130 Film 3 Composition 3 130 Film 4 Composition 4 130 Film 5 Composition 5 130 Comparative film 1 Comparative composition 1 130 Comparative film 2 Comparative composition 2 130 Comparative film 3 Comparative composition 2 5
(i-Line Exposure Evaluation of Dry Film Resist)

[0490] Examples 1 to 5 and Comparative Examples 1 and 2 Using a vacuum laminator PVL0202S(Nisshinbo Mechatronics Inc.), the degree of vacuum in the vacuum chamber was set to 50 Pa, and the resist composition layers on the support films of the dry film resists of films 1 to 5 and comparative films 1 and 2 were adhered to a 4-inch silicon wafer substrate on which copper had been deposited by vapor deposition. Then, the resist composition layer was formed by pre-baking on a direct hot plate at 120 C. for 300 seconds.

[0491] Then, the composition layer formed on the wafer was exposed to light through a mask for forming a 1:1 contact hole pattern (hole diameter: 30, 40, 50 m, pitch: 60, 80, 100 m) using an i-line stepper (NSR-200519C, manufactured by NIKON CORPORATION, NA=0.5) while changing the exposure dose stepwise.

[0492] Without a heat treatment after exposure (post-exposure bake), a 2.38% by mass tetramethylammonium hydroxide (TMAH) aqueous solution was allowed to stand for 100 seconds (puddle development), and this was repeated five times to provide the resist pattern. The resist pattern obtained after development was observed with a scanning electron microscope, and the exposure dose at which a 50 m hole pattern was obtained was determined to be the effective sensitivity.

Reference Examples 1 and 2

[0493] In the i-line exposure evaluation of the above dry film resist, the i-line exposure evaluation of the dry film resist was performed in the same manner as in Example 1, except that comparative films 2 and 3 were used instead of film 1, and after exposure, post-exposure baking was performed on a hot plate at a temperature of 90 C. for 90 seconds.

<Resolution Evaluation>

[0494] The resist pattern obtained at the effective sensitivity was observed with a scanning electron microscope, and the minimum mask hole diameter of the resolved contact hole pattern was measured.

[0495] A hole diameter of any one hole selected from the resolved contact hole patterns was rated as O in a case of 100% to 80% of the mask hole diameter, O in a case of 80% to 50%, and in a case of 50% to 10%.

<Plating Resistance Evaluation>

[0496] A patterned wafer was prepared at an effective sensitivity obtained in the i-line exposure evaluation as described above, and then was immersed in a Cu plating solution for 15 minutes.

[0497] After completion of the immersion, the patterned wafer was observed under an optical microscope to observe the contact hole pattern with a line width of 50 m.

[0498] After immersion for 10 minutes, the resist pattern was dissolved in the plating solution and a change was observed in the resist pattern, which was rated as x, after immersion for 15 minutes, there was no change in the resist pattern, which was rated as and after immersion for 20 minutes, there was no change in the resist pattern, which was marked as O.

[0499] Table 3 shows the evaluation of resolution and plating resistance for each of Examples 1 to 5, Comparative Examples 1 and 2, and Reference Examples 1 and 2.

TABLE-US-00003 TABLE 3 Resist Thickness Resolution Plating Dry film resist composition PEB (m) (m) resistance Example 1 Film 1 Composition 1 130 40 Example 2 Film 2 Composition 2 130 40 Example 3 Film 3 Composition 3 130 40 Example 4 Film 4 Composition 4 130 40 Example 5 Film 5 Composition 5 130 40 Comparative Comparative Comparative 130 40 X Example 1 film 1 composition 1 Comparative Comparative Comparative 130 No Example 2 film 2 composition 2 resolution Reference Comparative Comparative 90 C./90 sec 130 40 Example 1 film 2 composition 2 Residue Reference Comparative Comparative 90 C./90 sec 5 30 Example 2 film 3 composition 2

[0500] From Table 1, it has been confirmed that the resist patterns of Examples 1 to 5 had favorable resolution and plating resistance without heat treatment after exposure (post-exposure bake: PEB), despite having a large film thickness of 130 m. In contrast, it has been confirmed that the resist pattern of Comparative Example 1 did not resolve and had poor plating resistance without PEB. It has been confirmed that the resist pattern of Comparative Example 2 achieved resolution by performing PEB, but left residues.

INDUSTRIAL APPLICABILITY

[0501] The resist composition of the present invention can form a resist pattern that exhibits both excellent resolution and plating resistance, and is suitable for semiconductor microfabrication and therefore extremely useful industrially.