TRANSPARENT LAMINATED PASSIVATION FILM STRUCTURE, AND PREPARATION METHOD AND APPLICATION THEREOF

Abstract

A transparent laminated passivation film structure and a preparation method and application thereof are provided. The transparent laminated passivation film structure includes a first passivation layer, a second passivation layer, and a third passivation layer sequentially laminated on a surface of a silicon substrate. The material of the first passivation layer is a hydrogenated silicon oxide film. The material of the second passivation layer is one selected from a hydrogenated silicon carbon nitride film, a hydrogenated silicon carbide film, a hydrogenated silicon nitride film, a hydrogenated silicon carbon nitride oxide film, a hydrogenated silicon carbide oxide film, and a hydrogenated silicon nitride oxide film. The material of the third passivation layer is one or a laminated film of more selected from a hydrogenated aluminum oxide film, a hydrogen-containing silicon nitride film, and a hydrogenated silicon oxide film. The transparent laminated passivation film structure has excellent surface and bulk passivation effects.

Claims

1. A transparent laminated passivation film structure, comprising a first passivation layer, a second passivation layer, and a third passivation layer, wherein the first passivation layer, the second passivation layer, and the third passivation layer are sequentially laminated on a surface of a silicon substrate; wherein a material of the first passivation layer is a hydrogenated silicon oxide film; a material of the second passivation layer is one selected from a hydrogenated silicon carbon nitride film, a hydrogenated silicon carbide film, a hydrogenated silicon nitride film, a hydrogenated silicon carbon nitride oxide film, a hydrogenated silicon carbide oxide film, and a hydrogenated silicon nitride oxide film; a material of the third passivation layer is one or a laminated film of more selected from a hydrogenated aluminum oxide film, a hydrogen-containing silicon nitride film, and the hydrogenated silicon oxide film.

2. The transparent laminated passivation film structure according to claim 1, wherein the silicon substrate comprises a hydrogen element and at least one of a carbon element and a nitrogen element, and a concentration of each element gradually decreases from the surface to a body.

3. The transparent laminated passivation film structure according to claim 2, wherein a hydrogen concentration on the surface of the silicon substrate is 110.sup.19 cm.sup.3-110.sup.21 cm.sup.3.

4. The transparent laminated passivation film structure according to claim 3, wherein a nitrogen concentration on the surface of the silicon substrate is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, and/or a carbon concentration on the surface of the silicon substrate is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3.

5. The transparent laminated passivation film structure according to claim 1, wherein a hydrogen concentration of the first passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, a hydrogen concentration of the second passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, and a hydrogen concentration of the third passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3.

6. The transparent laminated passivation film structure according to claim 5, wherein a refractive index of the second passivation layer is 1.0-5.0.

7. The transparent laminated passivation film structure according to claim 5, wherein transmittance of the first passivation layer at wavelengths above 400 nm is greater than 97%, and transmittance of the second passivation layer at the wavelengths above 400 nm is greater than 97%.

8. The transparent laminated passivation film structure according to claim 5, wherein a thickness of the first passivation layer is 1-20 nm, and a thickness of the second passivation layer is greater than or equal to 2 nm.

9. A preparation method of the transparent laminated passivation film structure according to claim 1, comprising the following steps: S1, cleaning the silicon substrate; S2, preparing a silicon oxide film on the surface of the silicon substrate; S3, depositing an amorphous silicon film containing carbon and/or nitrogen elements on the silicon oxide film; S4, carrying out a high-temperature annealing treatment at a temperature of 600 C.-1200 C. to convert the amorphous silicon film into a polycrystalline silicon film; S5, depositing one or a laminated film of more selected from aluminum oxide, silicon nitride, and silicon oxide on the polycrystalline silicon film; and S6, carrying out a hydrogen injection treatment.

10. The preparation method of the transparent laminated passivation film structure according to claim 9, wherein in the step S6, an annealing treatment is adopted for hydrogenation, and a treatment temperature is 300 C.-1000 C.

11. The preparation method of the transparent laminated passivation film structure according to claim 9, wherein in the step S3, the amorphous silicon film containing carbon and/or nitrogen elements is deposited in situ by plasma-enhanced chemical vapor deposition (PECVD).

12. A silicon-based semiconductor device, comprising the transparent laminated passivation film structure according to claim 1.

13. The transparent laminated passivation film structure according to claim 2, wherein a hydrogen concentration of the first passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, a hydrogen concentration of the second passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, and a hydrogen concentration of the third passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3.

14. The transparent laminated passivation film structure according to claim 3, wherein a hydrogen concentration of the first passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, a hydrogen concentration of the second passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, and a hydrogen concentration of the third passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3.

15. The transparent laminated passivation film structure according to claim 4, wherein a hydrogen concentration of the first passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, a hydrogen concentration of the second passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, and a hydrogen concentration of the third passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3.

16. The preparation method of the transparent laminated passivation film structure according to claim 9, wherein in the transparent laminated passivation film structure, the silicon substrate comprises a hydrogen element and at least one of a carbon element and a nitrogen element, and a concentration of each element gradually decreases from the surface to a body.

17. The preparation method of the transparent laminated passivation film structure according to claim 16, wherein in the transparent laminated passivation film structure, a hydrogen concentration on the surface of the silicon substrate is 110.sup.19 cm.sup.3-110.sup.21 cm.sup.3.

18. The preparation method of the transparent laminated passivation film structure according to claim 17, wherein in the transparent laminated passivation film structure, a nitrogen concentration on the surface of the silicon substrate is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, and/or a carbon concentration on the surface of the silicon substrate is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3.

19. The preparation method of the transparent laminated passivation film structure according to claim 9, wherein in the transparent laminated passivation film structure, a hydrogen concentration of the first passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, a hydrogen concentration of the second passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3, and a hydrogen concentration of the third passivation layer is 110.sup.19 cm.sup.3-110.sup.22 cm.sup.3.

20. The preparation method of the transparent laminated passivation film structure according to claim 19, wherein in the transparent laminated passivation film structure, a refractive index of the second passivation layer is 1.0-5.0.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0035] FIG. 1 is a schematic structural diagram of a transparent laminated passivation film structure in specific implementations of the present invention.

[0036] FIG. 2 is a flowchart of a preparation method of the transparent laminated passivation film structure in specific implementations of the present invention.

[0037] FIG. 3 is a minority carrier lifetime diagram of the sample prepared in Example 1 of the present invention.

[0038] FIG. 4 is a minority carrier lifetime diagram of the sample prepared in Comparative Example 1 of the present invention.

[0039] FIG. 5 is a minority carrier lifetime diagram of the sample prepared in Example 7 of the present invention.

[0040] FIG. 6 is a minority carrier lifetime diagram of the sample prepared in Comparative Example 4 of the present invention.

[0041] FIG. 7 is a minority carrier lifetime diagram of the sample prepared in Example 8 of the present invention.

[0042] FIG. 8 is a minority carrier lifetime diagram of the sample prepared in Comparative Example 5 of the present invention.

[0043] Numerals of the drawings are described below: [0044] 1silicon substrate, 2first passivation layer, 3second passivation layer, and 4third passivation layer.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0045] In order to make the above objects, features, and advantages of the present invention clearer and more intelligible, the specific examples of the present invention will be detailed below in combination with drawings. It should be noted that the examples below are used only to illustrate the implementation method and typical parameters of the present invention rather than to limit the parameter range of the present invention. Any reasonable change derived therefrom will still fall within the scope of protection of the claims of the present invention.

[0046] It should be noted that the endpoints and any values of the ranges disclosed herein are not limited to such accurate ranges or values. These ranges or values should be understood as including values close to these ranges or values. For the numerical ranges, mutual combination can be performed between the endpoint values of each range, between an endpoint value of each range and an individual point value, and between individual point values to form one or more new numerical ranges. These numerical ranges shall be considered as specifically disclosed herein.

[0047] A specific example of the present invention provides a transparent laminated passivation film structure, with its typical structure as shown in FIG. 1, which includes a first passivation layer 2, a second passivation layer 3, and a third passivation layer 4 sequentially laminated on a surface of a silicon substrate 1.

[0048] The material of the first passivation layer 2 is a hydrogenated silicon oxide film, and its main components are silicon, oxygen, and hydrogen. The hydrogen concentration in the first passivation layer 2 is greater than 110.sup.19 cm.sup.3, and the typical hydrogen concentration ranges from 110.sup.19 cm.sup.3 to 110.sup.22 cm.sup.3. The thickness of the first passivation layer 2 is above 1 nm, with a typical thickness range of 1-20 nm and a preferred thickness range of 1-2 nm. The transmittance of the first passivation layer 2 at wavelengths above 400 nm is more than 97%, and the absorption coefficient k value decreases to near zero at wavelengths above 500 nm, which has extremely low optical absorption characteristics.

[0049] The material of the second passivation layer 3 is one selected from a hydrogenated silicon carbon nitride film, a hydrogenated silicon carbide film, a hydrogenated silicon nitride film, a hydrogenated silicon carbon nitride oxide film, a hydrogenated silicon carbide oxide film, and a hydrogenated silicon nitride oxide film, and its main components are silicon, hydrogen, nitrogen, and/or carbon, and it may also contain oxygen. The thickness of the second passivation layer 3 is above 3 nm, with a typical thickness range of 3-50 nm and a preferred thickness range of 5-20 nm. The proportion of carbon, nitrogen, and other elements in the second passivation layer 3 can be adjusted, and its refractive index ranges from 1.0 to 5.0, which can be adjusted according to the composition. The hydrogen concentration in the second passivation layer 3 is greater than 110.sup.19 cm.sup.3, and the typical concentration ranges from 110.sup.19 cm.sup.3 to 110.sup.22 cm.sup.3. The transmittance of the second passivation layer 3 at wavelengths above 400 nm is more than 97%, and the absorption coefficient k value decreases to near zero at wavelengths above 500 nm, which has extremely low optical absorption characteristics.

[0050] The third passivation layer 4 is a hydrogen-rich dielectric layer or a combination thereof, including but not limited to hydrogenated aluminum oxide, hydrogenated silicon nitride, hydrogenated silicon oxide, or a composite laminated film thereof. The hydrogen concentration of the third passivation layer 4 ranges from 110.sup.19 cm.sup.3 to 110.sup.22 cm.sup.3.

[0051] The near surface and bulk region of the silicon substrate 1 contain a hydrogen element and at least one of a nitrogen element and a carbon element, and the concentration of the corresponding elements gradually decreases from the surface to the body. In the surface area below the first passivation layer 2, the nitrogen concentration is generally higher than 110.sup.19 cm.sup.3, and the typical concentration ranges from 110.sup.19 cm.sup.3 to 110.sup.22 cm.sup.3, usually exceeding 110.sup.21 cm.sup.3. The carbon concentration is generally higher than 110.sup.19 cm.sup.3, and the typical concentration ranges from 110.sup.19 cm.sup.3 to 110.sup.22 cm.sup.3, usually exceeding 110.sup.21 cm.sup.3. The hydrogen concentration is generally higher than 110.sup.19 cm.sup.3, and the typical concentration ranges from 110.sup.19 cm.sup.3 to 110.sup.21 cm.sup.3, usually exceeding 110.sup.20 cm.sup.3. The introduction of carbon, nitrogen, oxygen, and other elements into the near surface of a silicon wafer can improve the mechanical properties of the silicon wafer. Carbon and nitrogen atoms can effectively capture hydrogen atoms and inject them into the substrate and interface to passivate more defect states.

[0052] Referring to FIG. 2, a typical preparation method of the transparent laminated passivation film structure includes the following steps: [0053] S1, performing standard RCA cleaning, developed by the Radio Corporation of America, on a silicon substrate. [0054] S2, preparing a silicon oxide film on a surface of the silicon substrate, where the preparation method includes a wet chemical method, a plasma-assisted oxidation method, a thermal oxidation method, an ozone gas oxidation method, and the like. [0055] S3, depositing an amorphous silicon film containing carbon and/or nitrogen elements on the silicon oxide film, where the typical preparation method is an in-situ PECVD method, and the deposition temperature range is 100 C.-600 C. [0056] S4, carrying out high-temperature annealing treatment, where the typical temperature range is 600 C.-1200 C., and the protective atmosphere is nitrogen, so as to crystallize amorphous silicon and push carbon atoms and/or nitrogen atoms into the silicon substrate. [0057] S5, depositing one or a laminated film of more selected from aluminum oxide, silicon nitride, and silicon oxide on the polycrystalline silicon film. [0058] S6, carrying out hydrogen injection treatment. Preferably, annealing treatment is adopted for hydrogenation; the treatment temperature is 300 C.-1000 C., and the protective atmosphere contains inert gas such as nitrogen, preferably a mixed gas of nitrogen and hydrogen.

[0059] According to the preparation method, carbon and nitrogen atoms can be introduced into the silicon wafer bulk, and more hydrogen atoms can be captured at the interface. The transparent laminated passivation film structure achieves excellent surface passivation effect and bulk passivation effect; the saturation current density can be reduced to 0.2 fA/cm.sup.2 on the surface of the silicon wafer, and the minority carrier life of the n-type silicon wafer bulk can be prolonged to more than 15 ms.

[0060] The transparent laminated passivation film structure is suitable for silicon-based semiconductor devices, and the preparation method is completely compatible with the prior battery production line technology. Other transparent dielectric films can be superimposed on the passivation film structure to form a more complex layer structure to improve the performance of the device.

[0061] The technical schemes and technical effects of the present invention will be further described by specific examples.

Example 1

[0062] An n-type silicon wafer was prepared, which was planar, with a thickness of 110 m and a resistivity of 1-7 2 cm. The silicon wafer was subjected to standard RCA cleaning and placed in a PECVD chamber. An SiO.sub.x film was prepared by N.sub.2O plasma, and then a nitrogen-rich amorphous silicon film (nitrogen content was 15 at %) was deposited. Annealing at 900 C. for 30 min in a tube furnace. AlO.sub.x was deposited by atomic layer deposition (ALD) and annealed in the tube furnace at 450 C. for 30 min. Then transferred to PECVD to deposit SiN.sub.x and finally annealed at 400 C. for 60 min in the tube furnace in a mixed gas atmosphere of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 0.3-0.6 fA/cm.sup.2. One sample was selected to test the lifetime; the minority carrier lifetime diagram is shown in FIG. 3, and the test result is about 15 ms.

Example 2

[0063] An n-type silicon wafer was prepared, which was planar, with a thickness of 110 m and a resistivity of 1-7 .Math.cm. The silicon wafer was subjected to standard RCA cleaning and placed in a PECVD chamber. An SiO.sub.x film was prepared by N.sub.2O plasma, and then a carbon-rich amorphous silicon film (carbon content was 15 at %) was deposited. Annealing at 900 C. for 30 min in a tube furnace. AlO.sub.x was deposited by ALD and annealed in the tube furnace at 450 C. for 30 min. Then transferred to PECVD to deposit SiN.sub.x and finally annealed at 400 C. for 60 min in the tube furnace in a mixed gas atmosphere of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 0.5-0.9 fA/cm.sup.2.

Example 3

[0064] An n-type silicon wafer was prepared, which was planar, with a thickness of 110 m and a resistivity of 1-7 2 cm. The silicon wafer was subjected to standard RCA cleaning and placed in a PECVD chamber. An SiO.sub.x film was prepared by N.sub.2O plasma, and then a nitrogen- and carbon-rich amorphous silicon film (nitrogen content was 5 at %, carbon content was 10 at %) was deposited. Annealing at 900 C. for 30 min in a tube furnace. AlO.sub.x was deposited by ALD and annealed in the tube furnace at 450 C. for 30 min. Then transferred to PECVD to deposit SiN.sub.x and finally annealed at 400 C. for 60 min in the tube furnace in a mixed gas atmosphere of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 0.2-0.5 fA/cm.sup.2.

Example 4

[0065] An n-type silicon wafer was prepared, which was planar, with a thickness of 110 m and a resistivity of 1-7 .Math.cm. The silicon wafer was subjected to standard RCA cleaning and placed in a PECVD chamber. An SiO.sub.x film was prepared by N.sub.2O plasma, and then a nitrogen- and oxygen-rich amorphous silicon film (nitrogen content was 15 at %, oxygen content was 5 at %) was deposited. Annealing at 900 C. for 30 min in a tube furnace. AlO.sub.x was deposited by ALD and annealed in the tube furnace at 450 C. for 30 min. Then transferred to PECVD to deposit SiN.sub.x and finally annealed at 400 C. for 60 min in the tube furnace in a mixed gas atmosphere of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 0.2-0.6 fA/cm.sup.2.

Example 5

[0066] An n-type silicon wafer was prepared, which was planar, with a thickness of 110 m and a resistivity of 1-7 2 cm. The silicon wafer was subjected to standard RCA cleaning and placed in a PECVD chamber. An SiO.sub.x film was prepared by N.sub.2O plasma, and then a carbon- and oxygen-rich amorphous silicon film (carbon content was 15 at %, oxygen content was 5 at %) was deposited. Annealing at 900 C. for 30 min in a tube furnace. AlO.sub.x was deposited by ALD and annealed in the tube furnace at 450 C. for 30 min. Then transferred to PECVD to deposit SiN.sub.x and finally annealed at 400 C. for 60 min in the tube furnace in a mixed gas atmosphere of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 0.4-0.8 fA/cm.sup.2.

Example 6

[0067] An n-type silicon wafer was prepared, which was planar, with a thickness of 110 m and a resistivity of 1-7 .Math.cm. The silicon wafer was subjected to standard RCA cleaning and placed in a PECVD chamber. An SiO.sub.x film was prepared by N.sub.2O plasma, and then a nitrogen-, carbon-, and oxygen-rich amorphous silicon film (nitrogen content was 5 at %, carbon content was 5 at %, and oxygen content was 5 at %) was deposited. Annealing at 900 C. for 30 min in a tube furnace. AlO.sub.x was deposited by ALD and annealed in the tube furnace at 450 C. for 30 min. Then transferred to PECVD to deposit SiN.sub.x and finally annealed at 400 C. for 60 min in the tube furnace in a mixed gas atmosphere of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 0.2-0.5 fA/cm.sup.2.

Example 7

[0068] An n-type silicon wafer was prepared, which was textured, with a thickness of 200 m and a resistivity of 1-7 2 cm. The silicon wafer was subjected to standard RCA cleaning and placed in a PECVD chamber. An SiO.sub.x film was prepared by N.sub.2O plasma, and then a nitrogen-rich amorphous silicon film (nitrogen content was 15 at %) was deposited. Annealing at 900 C. for 30 min in a tube furnace. AlO.sub.x was deposited by ALD and annealed in the tube furnace at 450 C. for 30 min. Then transferred to PECVD to deposit SiN.sub.x and finally annealed at 400 C. for 60 min in the tube furnace in a mixed gas atmosphere of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 0.8-1.5 fA/cm.sup.2. One sample was selected to test the lifetime; the minority carrier lifetime diagram is shown in FIG. 5, and the test result is about 10 ms.

Example 8

[0069] A double-sided phosphor diffused p-type silicon wafer was prepared, which was textured, with a thickness of 170 m and a resistivity of 1-15 .Math.cm. The silicon wafer was subjected to standard RCA cleaning and placed in a PECVD chamber. An SiO.sub.x film was prepared by N.sub.2O plasma, and then a nitrogen-rich amorphous silicon film (nitrogen content was 15 at %) was deposited. Annealing at 900 C. for 30 min in a tube furnace. AlO.sub.x was deposited by ALD and annealed in the tube furnace at 450 C. for 30 min. Then transferred to PECVD to deposit SiN.sub.x and finally annealed at 400 C. for 60 min in the tube furnace in a mixed gas atmosphere of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 15-20 fA/cm.sup.2. One sample was selected to test the lifetime; the minority carrier lifetime diagram is shown in FIG. 7, and the test result is about 1.8 ms.

Comparative Example 1

[0070] An n-type silicon wafer was prepared, with a thickness of 110 m and a resistivity of 1-7 .Math.cm. The silicon wafer was subjected to standard RCA cleaning and placed in an ALD chamber to deposit AlO.sub.x, then transferred to a tube furnace and annealed at 450 C. for 30 min in a nitrogen atmosphere. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 3.0-5.0 fA/cm.sup.2. One sample was selected to test the lifetime; the minority carrier lifetime diagram is shown in FIG. 4, and the test result is about 5.6 ms.

Comparative Example 2

[0071] An n-type silicon wafer was prepared, with a thickness of 110 m and a resistivity of 1-7 .Math.cm. The silicon wafer was subjected to standard RCA cleaning and placed in an ALD chamber to deposit AlO.sub.x, then transferred to a tube furnace and annealed at 450 C. for 30 min in a nitrogen atmosphere; transferred to PECVD to deposit SiN.sub.x; and finally transferred to the tube furnace and annealed at 400 C. for 60 min under a mixed gas of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 2.0-4.0 fA/cm.sup.2.

Comparative Example 3

[0072] An n-type silicon wafer was prepared, with a thickness of 110 m and a resistivity of 1-7 .Math.cm. The silicon wafer was subjected to standard RCA cleaning and placed in a tube furnace; SiO.sub.x was prepared in an oxygen atmosphere and then transferred to a PECVD chamber to deposit SiN.sub.x. Finally, annealed at 400 C. for 60 min in the tube furnace under a mixed gas of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 8.0-12.0 fA/cm.sup.2.

Comparative Example 4

[0073] An n-type silicon wafer was prepared, which was textured, with a thickness of 200 m and a resistivity of 1-7 .Math.cm. The silicon wafer was subjected to standard RCA cleaning and placed in an ALD chamber to deposit AlO.sub.x. Then transferred to a tube furnace and annealed at 450 C. for 30 min in a nitrogen atmosphere. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 5-10 fA/cm.sup.2. One sample was selected to test the lifetime; the minority carrier lifetime diagram is shown in FIG. 6, and the test result is about 5 ms.

Comparative Example 5

[0074] A double-sided phosphor diffused p-type silicon wafer was prepared, which was textured, with a thickness of 170 m and a resistivity of 1-15 2 cm. The silicon wafer was subjected to standard RCA cleaning and placed in a tube furnace. SiO.sub.x was prepared in an oxygen atmosphere and then transferred to a PECVD chamber to deposit SiN.sub.x. Finally, annealed at 400 C. for 60 min in the tube furnace under a mixed gas of nitrogen and hydrogen. Six samples were prepared, and a Sinton test was performed. The test results of single-sided saturation current density J.sub.0,s were in a range of 25-35 fA/cm.sup.2. One sample was selected to test the lifetime; the minority carrier lifetime diagram is shown in FIG. 8, and the test result is about 0.8 ms.

[0075] The test results of single-sided saturation current densities J.sub.0,s of the above Examples 1-8 and Comparative Examples 1-5 are shown in Table 1 below. The results show that the transparent laminated passivation film structure of the present invention has an excellent passivation effect and can greatly reduce the saturation current density.

TABLE-US-00001 TABLE 1 Comparison of single-sided saturation current density of passivated structures in Examples 1-6 and Comparative Examples 1-3 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 J.sub.0, s 0.3-0.6 0.5-0.9 0.2-0.5 0.2-0.6 0.4-0.8 0.2-0.5 0.5-1.5 15-20 (fA/cm.sup.2) Comparative Comparative Comparative Comparative Comparative Example 1 Example 2 Example 3 Example 4 Example 5 3.0-5.0 2.0-4.0 8.0-12.0 5.0-10 25-35

[0076] Although the present invention is disclosed as above, the present invention is not limited hereto. Any person skilled in the arts can make various changes and modifications within the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be indicated in the claims.