Component Carrier With Photoimageable Dielectric Layer and Structured Conductive Layer Being Used as a Mask for Selectively Exposing the Photoimageable Dielectric Layer With Electromagnetic Radiation

Abstract

A component carrier includes a layer stack having at least one component carrier material, a component at least partially embedded in the layer stack, where the component has at least one metal layer structure; and a photoimageable dielectric layer structure on the layer stack. The photoimageable dielectric layer structure has at least one recess extending vertically through the photoimageable dielectric layer structure up to the at least one metal layer structure of the component.

Claims

1. A component carrier, comprising: a layer stack comprising at least one component carrier material and a component at least partially embedded within the layer stack, wherein the component comprises at least one metal layer structure; a photoimageable dielectric layer structure formed on top of the layer stack, wherein the photoimageable dielectric layer structure has at least one recess extending vertically through the photoimageable dielectric layer structure up to the at least one metal layer structure of the component.

2. The component carrier as set forth in claim 1, wherein the at least one metal layer structure is a pad of the component.

3. The component carrier as set forth in claim 1, wherein the at least one recess extending through the photoimageable dielectric layer structure vertically extends through an entire thickness of the photoimageable dielectric layer structure.

4. The component carrier as set forth in claim 1, further comprising: at least one electrically conductive layer structure formed on the photoimageable dielectric layer structure, wherein the at least one electrically conductive layer structure comprises a spatial pattern that at least partially corresponds to the at least one recess of the photoimageable dielectric layer structure.

5. The component carrier as set forth in claim 4, wherein a surface of the photoimageable dielectric layer structure opposite the layer stack has a roughness matched to the roughness of a surface of the at least one electrically conductive layer structure facing the photoimageable dielectric layer structure.

6. The component carrier as set forth in claim 4, wherein the at least one electrically conductive layer structure having at least one opening formed therein is selected from the group consisting of copper, aluminum, nickel, silver, titanium, and gold.

7. The component carrier as set forth in claim 1, wherein a center of the at least one recess is misaligned with a center of the at least one metal layer structure of the component.

8. The component carrier as set forth in claim 1, further comprising: a further photoimageable dielectric layer structure formed on bottom of the layer stack, wherein the further photoimageable dielectric layer structure has at least one further recess extending vertically through the further photoimageable dielectric layer structure.

9. The component carrier as set forth in claim 8, wherein the at least one metal layer structure of the embedded component is exposed on one side of the layer stack through the photoimageable dielectric layer structure, and/or wherein at least one further metal layer structure is exposed on an opposite side of the layer stack through the further photoimageable dielectric layer structure.

10. The component carrier as set forth in claim 9, further comprising: a seed layer formed within the at least one recess of the photoimageable dielectric layer structure and/or formed within the at least one further recess of the further photoimageable dielectric layer structure.

11. The component carrier as set forth in claim 10, further comprising: an electrically conductive material provided on the seed layer to electrically contact the embedded component on one side of the layer stack and/or to electrically contact the at least one further metal layer structure on the opposite side of the layer stack.

12. The component carrier as set forth in claim 11, wherein the electrically conductive material is formed on the at least one electrically conductive layer structure.

13. The component carrier as set forth in claim 12, wherein the electrically conductive material provided within the at least one recess forms at least one of a via connection extending through the photoimageable dielectric layer structure and a pattern within a plane being perpendicular to the vertical extension of the recess.

14. The component carrier as set forth in claim 1, wherein the at least one recess forms a cavity within the photoimageable dielectric layer structure.

15. The component carrier as set forth in claim 8, further comprising: at least one further component being accommodated within the at least one recess of the photoimageable dielectric layer structure and/or within the at least one further recess of the further photoimageable dielectric layer structure.

16. The component carrier as set forth in claim 15, wherein the embedded component and/or the at least one further component is selected from a group consisting of an electronic component, an electrically non-conductive and/or electrically conductive inlay, a heat transfer unit, an energy harvesting unit, an active electronic component, a passive electronic component, an electronic chip, a storage device, a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a voltage converter, a cryptographic component, a transmitter and/or receiver, an electromechanical transducer, an actuator, a microelectromechanical system, a microprocessor, a capacitor, a resistor, an inductance, an accumulator, a switch, a camera, an antenna, a magnetic element, a further component carrier and a logic chip.

17. The component carrier as set forth in claim 1, wherein the layer stack comprises at least a part of a wafer.

18. The component carrier as set forth in claim 1, wherein the component carrier is configured as a laminate-type component carrier.

19. The component carrier as set forth in claim 1, wherein the component carrier is configured as one of the group consisting of a printed circuit board and a substrate.

20. The component carrier as set forth in claim 1, wherein the layer stack is formed as a core-less layer stack.

21. The component carrier as set forth in claim 1, wherein the layer stack comprises an electrically conductive material selected from the group consisting of copper, aluminum, nickel, silver, gold, palladium, and tungsten.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Embodiments of the component carrier can be better understood with reference to the following drawings. The elements and features in the drawings are not necessarily to scale, emphasis instead being placed upon clearly illustrating the structures and principles of operation of the assemblies.

[0057] FIGS. 1A, 1B, 1C illustrate a recess/via formation within a photoimageable dielectric (PID) layer structure by using a patterned electrically conductive layer structure as a mask for spatially selectively irradiating the PID layer with electromagnetic radiation.

[0058] FIGS. 2A, 2B, 2C, 2D, 2E illustrate a process overview for forming recesses/vias within two PID layers provided at different sides of a PCB layer stack.

[0059] FIGS. 3A, 3B illustrate a full panel plating as an option I following the process shown in FIGS. 2A-2E.

[0060] FIGS. 4A, 4B, 4C, 4D illustrate a via filling and pattern plating including a further lithographic step as an option II following the process shown in FIGS. 2A-2E.

[0061] FIGS. 5A, 5B, 5C, 5D, 5E illustrate a process for contacting an electronic component being embedded within a PCB.

[0062] FIGS. 6A, 6B, 6C, 6D illustrate a process for obtaining a redistribution layer (RDL) arrangement on fan-out/wafer level packages or panel-level packages.

[0063] FIGS. 7A, 7B, 7C, 7D illustrate a recess/via formation within a negative type PID layer.

[0064] FIGS. 8A, 8B, 8C, 8D, 8E illustrate a cavity formation within a PID layer by using a patterned electrically conductive layer structure as a mask.

DETAILED DESCRIPTION OF ILLUSTRATED EMBODIMENTS

[0065] The illustrations in the drawings are schematically presented. It is noted that in different figures, similar or identical elements or features are provided with the same reference signs or with reference signs, which are different from the corresponding reference signs only within the first digit. In order to avoid unnecessary repetition, elements or features, which have already been elucidated with respect to a previously described embodiment, are not elucidated again at a later position of the description.

[0066] Further, spatially relative terms, such as front and back, above and below, left and right, et cetera are used to describe an element's relationship to other element(s) or features as illustrated in the Figures. Thus, the spatially relative terms may apply to orientations in use which differ from the orientation depicted in the Figures. Obviously all such spatially relative terms refer to the orientation shown in the Figures only for ease of description and are not necessarily limiting as an apparatus according to an embodiment of the disclosure can assume orientations different than those illustrated in the Figures when in use.

[0067] FIGS. 1A, 1B and 1C illustrate the main steps of a process for forming a recess or a via in a photoimageable dielectric (PID) layer structure of a component carrier in accordance with an embodiment of the disclosure. FIG. 1A shows a laminated layer stack 190 which represents the starting point for manufacturing the component carrier. The laminated stack 190 comprises a laminated PCB layer stack 110, which itself comprises at least one layer sequence consisting of a dielectric resin layer and metal layer structure. In FIG. 1A, the PCB layer stack 110 is depicted as a single layer PCB having only one dielectric resin layer 112 and one structured metal layer 114. However, in many embodiments, the laminated PCB layer stack 110 comprises two, three, or even more of such layer sequences.

[0068] On top of the laminated PCB layer stack 110 there is formed a photoimageable dielectric (PID) layer 120. The PID layer 120 may have a thickness of e.g. 10 m to 100 m. On top of the PID layer 120 there is formed a so far unstructured electrically conductive layer 130. The electrically conductive layer 130, which according to the embodiment described here is made from copper, may have a thickness of e.g. 0.1 m to 50 m.

[0069] It is pointed out that in the illustrated embodiment the layer stack 110 could be a conventional PCB with conductive tracks formed on a dielectric layer. However, alternatively an embedded conductive track stack up could be used, in which the conductive track is at the same height or slightly below the dielectric surface. This alternative arrangement could be chosen also for all other embodiments described here with reference to the other Figures which are elucidated below.

[0070] As shown in FIG. 1B, a first lithographic process forms a window in the electrically conductive layer 130. The window, which in this document is called an opening, is denominated with reference numeral 132.

[0071] In a next step the upper side of the structure shown in FIG. 1B is irradiated with electromagnetic radiation. Thereby, the now structured electrically conductive layer 130 acts as a mask for selectively exposing the PID layer 120 within the region aligned with the opening 132. The exposure of the electrically conductive layer 130 to electromagnetic radiation sensitizes the PID layer 120 in registration with the opening 132 to a chemical etching process.

[0072] The result of a corresponding etching process is shown in FIG. 1C. The respective material of the PID layer 120 has been removed such that a recess 122 is formed within the now structured PID layer 120. The two steps of photo imaging the PID layer 120 through the opening 132 and the following (chemical) etching of the PID layer 120 selectively within the region of the opening 132 can be seen as a second lithographic process.

[0073] Although the arrangement shown in FIG. 1C may be an intermediate product for further manufacturing electronic devices, in this document this arrangement is denominated a component carrier 100. For instance, the structured electrically conductive layer 130, which has been used as a mask, can be used for building up further electrically insulating and/or electrically conductive structures (not shown) of a larger electronic device. An example for such a build-up is a so called fan-out redistribution layer (RDL) arrangement.

[0074] Descriptively speaking, the process for manufacturing the component carrier 100 can be seen as a two-stage lithographic process wherein first within the electrically conductive layer 130 the windows being necessary for forming the recesses such as vias or cavities are realized. In a second lithographic process the PID layer 120 is structured such that the recesses 122 are formed. In the second lithography process the electrically conductive layer structure 130 serves as a mask for the PID layer 120 below. Hence, no (dedicated) masks are needed for appropriately structuring the PID layer 120. The roughness of the electrically conductive layer structure 130 will provide the necessary adhesion of the electrically conductive layer structure 130 to the PID layer 120 formed below. In addition, also chemical adhesion layers could be provided between the conductive layer structure and the PID, in particular for applications requiring high reliability in terms of peeling strength performance.

[0075] The benefit of the described PID structuring is the possibility to obtain z-direction structures, i.e. structures extending into a direction being perpendicular to the main planes of the layers, with different geometries by means of one exposure step. Therefore, vias with different diameters can be effectively achieved on one and the same the same PID layer 120. Further, also trenches or cavities with appropriate spatial dimensions can be realized.

[0076] FIGS. 2A through 2E illustrate a process overview for respectively forming recesses or vias within two PID layers provided at different sides of a PCB layer stack.

[0077] FIG. 2A shows various so far separate layers before a lamination. Specifically, the so far separate layers include, from the bottom up, a lower electrically conductive layer 130, a lower PID layer 120, a (middle) laminated PCB layer stack 110, an upper PID layer 120, and an upper electrically conductive layer 130. In the illustrated embodiment, the PCB layer stack 110 is embedded in a trace-like manner. However, it could also be realized with a conventional stack-up such as that shown in FIGS. 1A through 1C. Further, in the embodiment illustrated in FIG. 2A, the laminated PCB layer stack 110 comprises two metal layer structures 114 and a dielectric resin layer 112 formed between the two metal layer structures 114. It is pointed out that the PCB layer stack 110 could also comprise more than two layers, which could be denominated a multi-layer stack-up.

[0078] FIG. 2B shows the arrangement of FIG. 2A after lamination. In this document the corresponding laminated arrangement is denominated a laminated layer stack 290. FIG. 2C shows the laminated arrangement after the upper electrically conductive layer 130 and the lower electrically conductive layer 130 have been structured such that openings 132 are formed (by means of a first lithographic process). FIG. 2D shows the result of the second lithographic process, wherein in the region being aligned with the openings 132 of the PID layers 120 has been selectively removed such that corresponding recesses 122 are formed. In the embodiment described here, the recesses 122 expose or uncover portions of the two metal layer structures 114.

[0079] In a next step, the result of which is shown in FIG. 2E, a seed layer 240 is deposited both on the upper side and the lower side of the structure shown in FIG. 2D. According to the embodiment described here the seed layer 240 is formed by means of an electroless deposition of copper, or dry process deposition such as sputtering.

[0080] Descriptively speaking, FIGS. 3A, 3B and FIGS. 4A through 4D show two process options, respectively, for building up further built-up structures on both sides of a PCB, as obtained with the procedure illustrated in FIGS. 2A through 2E. Option I is illustrated in FIGS. 3A and 3B, Option II is illustrated in FIGS. 4A through 4D.

[0081] It is pointed out that the process described above can be applied also for core-less layer stacks being sandwiched between two PID layers. A corresponding core-less process flow consists in manufacturing two PCBs constituted only of build-up layers (i.e. without a mechanically stabilizing core) on the two sides of a temporary carrier. After manufacturing, the two PCBs are separated from the temporary carrier.

[0082] FIGS. 3A, 3B illustrate a full panel plating as Option I following the process shown in FIGS. 2A through 2E. FIG. 3A, which shows the starting point for the full panel plating option, is identical to FIG. 2E described above. According to the embodiment described here, the full panel plating is realized by depositing an electrically conductive material 250 both on the upper side and the lower side of the structure shown in FIG. 3A. Specifically, according to the embodiment described here, the deposition of the electrically conductive material 250 is realized with a galvanic copper deposition within the recesses 122 and on the panel surface. As can be seen from the result of such a full panel plating, which result it is shown in FIG. 3B, within the regions of the recesses 122 there are formed metallized via connections 252. In this document the structure resulting from this is a component carrier 300. The component carrier 300 can be further processed either by using conventional subtractive etching or by using a so called modified semi-additive process. In this regard it is mentioned that in a conventional semi-additive process (SAP) a seed layer is deposited over the entire naked surface of a dielectric layer structure. In a modified SAP, a copper foil is present at the surface of the dielectric layer structure.

[0083] FIGS. 4A through 4D illustrate a via filling and pattern plating process including a further lithographic step as Option II following the process shown in FIGS. 2A through 2E. Also for Option II the starting point, which is depicted in FIG. 4A, is the same as the structure shown in FIG. 2E.

[0084] In the beginning of Option II, by means of a further lithographic process, a photoresist (film) 460 is applied and structured on both surfaces. This is shown in FIG. 4B. Afterwards, a via and pattern plating procedure is executed again on both sides. Thereby, as can be seen from FIG. 4C, an electrically conductive material 250 including fully metallized via connections 252 is deposited (on both sides). Finally, as can be seen from FIG. 4D, the photoresist 460 is stripped off, and the conductive layer below it is etched away. In this document the structure resulting from this stripping off and etching is a component carrier 400.

[0085] FIGS. 5A-5E illustrate a process for contacting an electronic component 516 being embedded within a laminated PCB layer stack 510. The process is almost completely the same as the process illustrated in FIGS. 2A through 2E, including the two further processing options I and II shown in FIGS. 3A, 3B and FIGS. 4A through 4D, respectively. As can be taken already from FIG. 5A the only difference between these two processes is that the laminated PCB layer stack 510 accommodates the embedded electronic component 516 whereas the PCB 110 (illustrated in FIGS. 2A-2E) does not have an embedded component. In accordance with the embodiment described here the electronic component 516 may be embedded or integrated completely within the body of the PCB 510. Alternatively, the electronic component 516 may be accommodated within the PCB 510 such that one surface of the electronic component 516 forms a part of the surface of the PCB 510. At this point it is mentioned again that the metal layer structure 114 can be either an embedded trace-like structure or a conventional PCB, where a conductive track is formed on or over a dielectric layer structure.

[0086] FIG. 5B shows a laminated layer stack 590 with a PID layer 120 and an electrically conductive layer 130 laminated both on an upper side and on a lower side of the laminated PCB layer stack 510. Again, also in the embodiment described here the electrically conductive layer 130 is a copper layer.

[0087] FIG. 5C shows the laminated layer stack after (i) a first lithographic process performed at or performed with both the upper copper layer 130 and the lower copper layer 130, after (ii) a corresponding copper etching, and after (iii) a usual photo resist (not depicted) stripping.

[0088] FIG. 5D shows the laminated layer stack after a second lithographic process performed with both PID layers 120. Thereby, recesses 122 within the PID layers 120 are formed.

[0089] FIG. 5E shows the laminated layer stack after a deposition of a seed layer, e.g. copper, 240. Further process options are shown in FIGS. 3A, 3B and 4A through 4D, respectively.

[0090] The above elucidated principles of structuring a PID layer with a lithographic process, wherein a mask representing a structured electrically conductive layer of the final product is employed, can also be applied to wafer/panel level packaging (WLP/PLP) manufacturing methods. In this context FIGS. 6A through 6D illustrate a process for obtaining a redistribution layer (RDL) arrangement on fan-out/wafer level packages.

[0091] The starting point for a corresponding process, which starting point is illustrated in FIG. 6A, is given by a plurality of layers. These layers include, from the bottom up, a lower electrically conductive layer 130, a lower PID layer 120, a (middle) layer stack 610, an upper PID layer 120, and an upper electrically conductive layer 130. In the embodiment described here the layer stack 610 comprises two artificial wafer structures 618 and a carrier structure 616 formed between the two artificial wafer structures 618. The artificial wafer 618 comprises at least two unhoused/bare semiconductor components or naked chips.

[0092] FIG. 6B, shows the corresponding laminated layer stack 690 which is obtained by means of a lamination of the two PID layers 120 and the two electrically conductive layers 130 along either opposed surface of the layer stack 610.

[0093] FIG. 6C shows the laminated layer stack after (i) a first lithographic process performed at or performed with both the upper copper layer 130 and the lower copper layer 130, after (ii) a corresponding copper etching, and after (iii) a usual photo resist (not depicted) stripping.

[0094] FIG. 6D shows the laminated layer stack after a second lithographic process performed with both PID layers 120. Thereby, a plurality of recesses 122 within the PID layers 120 are formed.

[0095] Further processing steps, which for the sake of conciseness of FIG. 6 are only mentioned (and not depicted) are (i) a copper seed layer deposition, (ii) a further processing either with one of the above elucidated options I and II, (iii) further process repetitions for obtaining further RDL structures or RDL arrangements, and (iv) a component separation in order to obtain a plurality of singularized and (fan-out) packaged semiconductor components.

[0096] So far, the processes described are referring to a positive-type PID, i.e. the PID is structured where the exposure occurs. However, corresponding processes can also be realized for a negative-type PID. This means that PID material will be removed on the non-exposed parts. A corresponding process overview for a negative-type PID is shown in FIGS. 7A through 7D. Thereby, apart from employing a negative type PID layer 720 the starting point shown in FIG. 7A is very similar to the laminate structure shown in FIG. 1A.

[0097] FIG. 7B shows the laminated layer stack after (i) a first lithographic process performed at or performed with the electrically conductive layer 130, after (ii) a corresponding selective etching away of portions of the electrically conductive layer 130 such that openings 132 are produced, and after (iii) a usual photo resist (not depicted) stripping.

[0098] FIG. 7C shows the laminated layer stack after (i) a second lithographic process performed at or performed with the PID layer 720 and after (ii) a (complete) removal of the remaining material of the electrically conductive layer structure 130. A second curing step might be necessary, either thermal or with electromagnetic radiation, before stripping off the PID material.

[0099] FIG. 7D shows the laminated layer stack after a removal of the not photo-imaged regions of the negative-type PID layer 720. In this document the corresponding PID structured laminate is denominated a component carrier 700.

[0100] Descriptively speaking, the process described with reference to FIG. 7 leaves the bare PID material (i.e. no copper foil on it) unaffected. However, the roughness of the electrically-conductive layer structure 130, which has been used as a mask for photo-imaging, will leave its profile imprinted within the PID layer 720. Such a roughness might be then used as mechanical adhesion, in addition to the chemical one achieved with an electroless deposition of copper (not depicted). Afterwards, conventional structuring processes can be used to proceed with the component carrier manufacturing.

[0101] The structuring methods elucidated above can also be used to obtain any kind of z-direction structures, like vias, cavities, trenches, etc. FIG. 8 illustrates a cavity formation within a PID layer by using a patterned electrically conductive layer structure as a mask.

[0102] The corresponding process steps or intermediate products, which are depicted in FIG. 8A, FIG. 8B, and FIG. 8C, fully correspond to the process steps or intermediate products shown in above elucidated FIG. 2A, FIG. 2B, and FIG. 2C, respectively. The only difference between FIG. 8C and FIG. 2C is that an opening 832 within the electrically conductive layer structure 130 is much larger that the opening 132. Correspondingly, also the recess 822 representing a cavity 822 shown in FIG. 8D is much larger than the recess 122 shown in FIG. 2D.

[0103] The arrangement shown in FIG. 8D is further processed by forming a cavity protection 870 within the upper cavity 822 in the PID layer 120. According to the embodiment described here the lower cavity 822 remains unprotected. The cavity protection can be realized for instance by a screen printing procedure, adding a coverage mask during a lithographic process or any other appropriate procedure known to the skilled person. FIG. 8E shows the corresponding structure which in this document, although representing an intermediate product, is denominated a component carrier 800.

[0104] As can be taken from FIGS. 8A through 8E, a further processing can be carried out again with the two process options I and II as shown in and as described in conjunction with FIGS. 3A, 3B and FIGS. 4A through 4D, respectively.

[0105] The component carriers described in this document can be descriptively and briefly summarized as follows. With this document a structuring method of PID is presented, which is based on exploiting a structured copper foil as a mask for the PID layer itself. Subsequently, electroless copper will be deposited in particular on the sidewalls of recesses (e.g. vias) formed within the PID material. Further subsequently, a copper plating can be executed. A similar strategy can be adopted in order to form recess portions within a PCB.

[0106] It should be noted that the term comprising does not exclude other elements or steps and the use of articles a or an does not exclude a plurality. Also elements described in association with different embodiments may be combined.

LIST OF REFERENCE SIGNS

[0107] 100 component carrier [0108] 110 layer stack/laminated PCB layer stack/PCB core [0109] 112 dielectric resin layer [0110] 114 metal layer structure [0111] 120 photoimageable dielectric layer (structure) [0112] 122 recess [0113] 130 electrically conductive layer structure/mask [0114] 132 opening [0115] 190 laminated layer stack [0116] 240 seed layer [0117] 250 electrically conductive material [0118] 252 via connection [0119] 290 laminated layer stack [0120] 300 component carrier [0121] 400 component carrier [0122] 460 photoresist [0123] 510 layer stack/laminated PCB layer stack [0124] 516 embedded component [0125] 590 laminated layer stack [0126] 610 layer stack [0127] 616 carrier structure [0128] 618 naked chip/bare semiconductor component/artificial wafer [0129] 690 laminated layer stack [0130] 700 component carrier [0131] 720 negative-type photoimageable dielectric layer (structure) [0132] 800 component carrier [0133] 822 cavity [0134] 832 opening for cavity [0135] 870 cavity protection