SHORT-CIRCUIT SWITCHING DEVICE

Abstract

A short-circuit switching device, in particular a bypass switch, includes a semiconductor element with at least one p-n junction and at least one pyrotechnic ignition device. The semiconductor element is or at least can be in a blocking state prior to the ignition of the pyrotechnic ignition device on the basis of the involvement of the p-n junction. After the ignition of the pyrotechnic ignition device, the semiconductor element is at least partially destroyed, namely at least with respect to the at least one p-n junction, and made at least partially conductive independently of the current flow direction by using explosion gas released by the ignition device after an explosion.

Claims

1-15. (canceled)

16. A short-circuit switching device or bypass switch, comprising: a semiconductor element having at least one p-n junction; and at least one pyrotechnic ignition device; said semiconductor element being in a blocking state or at least being configured to be in a blocking state, prior to an ignition of said pyrotechnic ignition device based on an involvement of said p-n junction; and said semiconductor element being at least partially destroyed, at least with respect to said at least one p-n junction, after the ignition of said pyrotechnic ignition device, and said semiconductor element being made at least partially conductive regardless of a current flow direction, due to explosion gas released by said ignition device after an explosion.

17. The short-circuit switching device according to claim 16, which further comprises: an anode and a cathode; said semiconductor element having first and second n-doped semiconductor regions, said second n-doped semiconductor region being connected to said cathode or forming said cathode; said semiconductor element having first and second p-doped semiconductor regions, said first p-doped semiconductor region being connected to said anode or forming said anode; said first and second n-doped semiconductor regions and said first and second p-doped semiconductor regions forming at least three p-n junctions electrically in series between said anode and said cathode; said p-n junctions including a first p-n junction between said first p-doped semiconductor region and said first n-doped semiconductor region, a second p-n junction between said first n-doped semiconductor region and said second p-doped semiconductor region, and a third p-n junction between said second p-doped semiconductor region and said second n-doped semiconductor region; and said pyrotechnic ignition device being disposed to destroy at least said third p-n junction resulting in making at least said third p-n junction conductive regardless of the current flow direction, due to the explosion gas released by said pyrotechnic ignition device after an explosion.

18. The short-circuit switching device according to claim 17, wherein said pyrotechnic ignition device is disposed to destroy at least said second and third p-n junctions resulting in making at least said second and third p-n junctions conductive regardless of the current flow direction, due to the explosion gas released by said pyrotechnic ignition device after an explosion.

19. The short-circuit switching device according to claim 16, wherein said semiconductor element is a semiconductor wafer having a first wafer side and a second wafer side opposite to said first wafer side.

20. The short-circuit switching device according to claim 19, wherein: said pyrotechnic ignition device has an explosive charge and a gas conduction duct disposed in parallel with a plane of said semiconductor wafer, said gas conduction duct conducting the explosion gas produced by said explosive charge in parallel in a direction of a center of said wafer; and the explosion gas released after an explosion destroys at least said third p-n junction in a region of said center of said wafer and makes at least said third p-n junction conductive regardless of the current flow direction.

21. The short-circuit switching device according to claim 20, wherein the explosion gas released after an explosion also destroys said second p-n junction in said region of said center of said wafer and makes said second p-n junction conductive regardless of the current flow direction.

22. The short-circuit switching device according to claim 16, wherein said semiconductor element is a semiconductor wafer having: a first wafer side on which said first p-doped semiconductor region and said anode are disposed, and a second wafer side on which said second n-doped semiconductor region and said cathode are disposed.

23. The short-circuit switching device according to claim 22, which further comprise: an electrode supported on one of said wafer sides and making electrical contact with said anode or said cathode; said gas conduction duct of said pyrotechnic ignition device being formed by a duct-shaped cavity within said electrode or by a tube disposed within said duct-shaped cavity.

24. The short-circuit switching device according to claim 16, wherein said pyrotechnic ignition device directs the explosion gas released after an explosion toward a metallization applied to said semiconductor element or at least toward said metallization.

25. The short-circuit switching device according to claim 16, wherein said first and second n-doped semiconductor regions and said first and second p-doped semiconductor regions form a thyristor in which said second p-doped semiconductor region forms a gate region of said thyristor.

26. The short-circuit switching device according to claim 19, wherein said second p-doped semiconductor region extends in a direction of one of said two wafer sides and is contacted by a gate electrode applied to said wafer side.

27. The short-circuit switching device according to claim 25, wherein said pyrotechnic ignition device directs the explosion gas released after an explosion toward a gate electrode making contact with said gate region or at least toward said gate electrode.

28. An arrangement being at least one of a converter, a multilevel converter, a voltage stabilization device, a reactive power controller or a reactive power compensation system, the arrangement comprising: at least one module series circuit having at least two submodules connected electrically in series; a control device for actuating said submodules; and at least one short-circuit switching device according to claim 16.

29. The arrangement according to claim 28, wherein said submodules have outer connections, said at least one short-circuit switching device is a component part of one of said submodules, is connected in parallel with said outer connections and can short-circuit said outer connections.

30. A method for operating a short-circuit switching device or bypass switch, the method comprising: providing the short-circuit switching device with a semiconductor element having at least one p-n junction, and providing the short-circuit switching device with at least one pyrotechnic ignition device; switching the semiconductor element to a blocking state prior to an ignition of the pyrotechnic ignition device based of an involvement of the at least one p-n junction; and at least partially destroying the semiconductor element, at least with respect to the at least one p-n junction, by ignition of the pyrotechnic ignition device, and making the semiconductor element at least partially conductive regardless of a current flow direction by using explosion gas released by the ignition device after an explosion.

Description

[0028] The invention is explained in more detail below with reference to exemplary embodiments; in the figures, by way of example,

[0029] FIG. 1 shows an exemplary embodiment of a short-circuit switching device according to the invention prior to the triggering of an ignition device of the short-circuit switching device,

[0030] FIG. 2 shows the short-circuit switching device according to FIG. 1 after the triggering of the ignition device,

[0031] FIG. 3 shows an exemplary embodiment of a short-circuit switching device according to the invention in which a gas conduction duct is formed by a duct-shaped cavity in an electrode,

[0032] FIG. 4 shows an exemplary embodiment of a short-circuit switching device according to the invention without a gate electrode,

[0033] FIG. 5 shows an exemplary embodiment of a short-circuit switching device according to the invention with a continuous cathode,

[0034] FIG. 6 shows an exemplary embodiment of a converter according to the invention provided with short-circuit switching devices,

[0035] FIG. 7 shows an exemplary embodiment of a submodule that can be used to form module series circuits in the converter according to FIG. 6, and

[0036] FIG. 8 shows another exemplary embodiment of a submodule that can be used to form module series circuits in the converter according to FIG. 6.

[0037] For the sake of clarity, the same reference signs are always used for identical or comparable components in the figures.

[0038] FIG. 1 shows a first exemplary embodiment of a short-circuit switching device 10 according to the invention. The short-circuit switching device 10 comprises a semiconductor component 20 and a pyrotechnic ignition device 30.

[0039] In the exemplary embodiment according to FIG. 1, the semiconductor component 20 is formed by a semiconductor wafer comprising a first wafer side 21, a lower wafer side in FIG. 1, and a second wafer side 22, an upper wafer side in FIG. 1.

[0040] The semiconductor component 20 has a first p-doped semiconductor region 201, a second p-doped semiconductor region 202, a first n-doped semiconductor region 211 and a second n-doped semiconductor 212. The four semiconductor regions 201, 202, 211 and 212 form a total of three p-n junctions within the semiconductor component 20, namely a first p-n junction 221 between the first p-doped semiconductor region 201 and the first n-doped semiconductor region 211, a second p-n junction 222 between the first n-doped semiconductor region 211 and the second p-doped semiconductor region 202, and a third p-n junction 223 between the second p-doped semiconductor region 202 and the second n-doped semiconductor region 212.

[0041] The four semiconductor regions or the three p-n junctions form a thyristor in which the first p-doped semiconductor region 201 is contacted by an anode 11, the second n-doped semiconductor region 212 is contacted by a cathode 12, and the second p-doped semiconductor region 202 is contacted by a gate electrode 13.

[0042] In the exemplary embodiment according to FIG. 1, the pyrotechnic ignition device 30 comprises an explosive charge 31 that is connected to the center of the wafer on the second wafer side 22 of the semiconductor component 20 via a gas conduction duct 32. One end of the gas conduction duct 32 is directed toward the gate electrode 13 and carries an explosion gas G, produced by the explosive charge 31 in the event of the explosive charge 31 being triggered, to the gate electrode 13 or to the center of the wafer of the semiconductor component 20.

[0043] The semiconductor component 20, the anode 11, the cathode 12 and the gate electrode 13 may be formed by a conventional or commercially available thyristor, as is generally known and is used in the field of converter technology, for example. In contrast to a conventional wiring of the thyristor, the exemplary embodiment of FIG. 1 lacks an electrical contact-connection of the gate electrode 13 since the ignition of the thyristor is not caused electrically but pyrotechnically, for which reason the gate electrode 13 is connected only to the gas conduction duct 32 and the explosive charge 31.

[0044] Prior to an ignition of the explosive charge 31, the short-circuit switching device 10 is in an electrical blocking state or is without current because no current I can flow between the anode 11 and the cathode 12 in the absence of an ignition current between the second p-doped semiconductor region 202 and the second n-doped semiconductor region 212.

[0045] FIG. 2 shows the short-circuit switching device 10 according to FIG. 1 after ignition of the explosive charge 31. It can be seen that the explosion gas G has an effect on the gate electrode 13 and has at least locally destroyed said gate electrode, the second p-n junction 222 and the third p-n junction 223, with the result that the two p-n junctions 222 and 223 are made conductive regardless of the current flow direction—at least in their destroyed regions.

[0046] Through the destruction of the semiconductor structure on account of the effect of the explosion gas G, only one single functional p-n junction remains in the semiconductor component 20, namely the first p-n junction 221 between the first p-doped semiconductor region 201 and the first n-doped semiconductor region 211. In other words, electrically only one p-n diode remains, which between the anode 11 and the cathode 12 is conductive along the current flow direction I shown in FIG. 2. The short-circuit switching device 10 is thus unidirectionally conductive or connected through since the former transistor has been replaced with a simple p-n diode.

[0047] FIG. 3 shows a second exemplary embodiment of a short-circuit switching device 10 according to the invention. In the short-circuit switching device 10 according to FIG. 3, the gas conduction duct 32 of the pyrotechnic ignition device 30 is formed by a duct-shaped cavity 41 within an electrode placed onto the cathode 12. The electrode 40 thus has a double function: on the one hand, it permits simple, whole-area contacting of the cathode 12 and, on the other hand, it enables the explosion gas G to be passed on easily from the explosive charge 31 in the direction toward the gate electrode 13.

[0048] Other than that, the above statements in connection with FIGS. 1 and 2 apply accordingly in the exemplary embodiment according to FIG. 3.

[0049] FIG. 4 shows a third exemplary embodiment of a short-circuit switching device 10 according to the invention. In the short-circuit switching device 10 according to FIG. 4, the gate electrode 13 is omitted since an electrical contacting of the second p-doped semiconductor region 202 is not absolutely necessary for the functioning of the short-circuit switching device 10. During the production of the short-circuit switching device 10 according to FIG. 4, the application of the gate electrode 13 is thus omitted.

[0050] Furthermore, in the exemplary embodiment according to FIG. 4, the second p-doped semiconductor region 202 is separated from the second wafer side 22 by the second n-doped semiconductor region 212; this is possible since the gate electrode 13 are the gate connection is simply not there.

[0051] In the exemplary embodiment according to FIG. 4, the explosion gas G of the explosive charge 31 is directed directly to the second p-doped semiconductor region 202, as a result of which—as explained in connection with FIGS. 1 to 3—at least the second p-n junction 222 and the third p-n junction 223 are destroyed. Through the destruction of the two p-n junctions 222 and 223, the thyristor structure of the semiconductor component 20 results in a simple diode structure that is conductive in the current flow direction from the anode 11 to the cathode 12.

[0052] FIG. 5 shows a fourth exemplary embodiment of a short-circuit switching device 10 according to the invention. In the exemplary embodiment according to FIG. 5, the cathode 12 extends over the entire second wafer side 22 of the semiconductor component 20. As in the exemplary embodiment according to FIG. 4, there is no gate electrode 13.

[0053] Furthermore, in the exemplary embodiment according to FIG. 5, the second p-doped semiconductor region 202 is separated from the second wafer side 22 by the second n-doped semiconductor region 212, as is also the case in the exemplary embodiment according to FIG. 4.

[0054] Other than that, the above statements in connection with the first three exemplary embodiments according to FIGS. 1 to 4 apply accordingly in the fourth exemplary embodiment according to FIG. 5.

[0055] FIG. 6 shows an exemplary embodiment of an electrical arrangement in the form of a converter 1000, for example a multilevel converter shown, which is provided with short-circuit switching devices 10, as have been explained above. The first connection side AS1 of the converter 1000 has three AC voltage connections L1, L2 and L3 at each of which an alternating current can be fed into the converter 1000 or at which an alternating current can be drawn there from. On a second connection side AS2 there are two DC voltage connections at which a direct current Idc can be fed into the converter 1000 or can be drawn therefrom; these are denoted in FIG. 6 with the reference signs L+ and L−.

[0056] The DC voltage between the DC voltage connections L+ and L− has the reference sign Udc. The respective AC voltage applied between the AC voltage connections L1, L2 and L3 has the reference sign Uac.

[0057] The converter 1000 has three series circuits R1, R2 and R3 whose outer connections from the DC voltage connections L+ and L− of the converter 1000. The series circuits R1, R2 and R3 each comprise two series-connected module series circuits TS.

[0058] Each of the module series circuits TS has in each case at least two series-connected submodules SM that each comprise at least two switching elements and a capacitor. Exemplary embodiments for suitable submodules SM are explained below by way of example in connection with FIGS. 7 and 8.

[0059] The converter 1000 has a control device 2000 that is suitable for actuating the submodules SM and thus for actuating the module series circuits TS. For this purpose, the control device 2000 has a computation device 2100 and a memory 2200. A control program module SPM that determines the mode of operation of the computation device 2100 is stored in the memory 2200.

[0060] FIG. 7 shows an exemplary embodiment of a submodule SM comprising two switching elements S in the form of transistors, a diode D being connected in parallel (or antiparallel) with each of said switching elements, and a capacitor C as energy store. Said components form a half-bridge circuit that makes it possible to operate the capacitor C in only or exclusively a unipolar manner through actuating the switching elements S—by the control device 2000 according to FIG. 6.

[0061] The transistors and the respective parallel-connected diodes D may be prefabricated components, as is indicated graphically in the figures by boxes; the transistors and the respective parallel-connected diodes D may be IGBT components, for example.

[0062] Two short-circuit switching devices 10 are connected in parallel with the two connections A1 and A2, specifically with a different polarity; FIG. 7 thus shows that the connections A1 and A2 are each connected to the anode 11 of one short-circuit switching device and to the cathode 12 of the other short-circuit switching device 10. The short-circuit switching devices 10 are preferably those as have been described above in connection with FIGS. 1 to 5. The antiparallel connection of the two short-circuit switching devices 10 makes a bidirectional short-circuit possible because at least one of the two short-circuit switching devices 10 is conductive after pyrotechnic ignition on account of the first p-n junction 221 that is polarized in the flow direction.

[0063] FIG. 8 shows an exemplary embodiment of a submodule SM comprising four switching elements S the form of transistors, a diode being connected in parallel with each of said switching elements, and a capacitor C as energy store. Said components form a full-bridge circuit that makes it possible to operate the capacitor C in a bipolar manner through actuating the switching elements S—by the control device 2000 according to FIG. 6. Two short-circuit switching devices 10 (in antiparallel with one another) are again connected in parallel with the two connections A1 and A2, preferably those that have been described above in connection with FIGS. 1 to 5.

[0064] Although the invention has been described and illustrated in more detail through preferred exemplary embodiments, the invention is not restricted by the disclosed examples, and other variations may be derived therefrom by a person skilled in the art without departing from the scope of protection of the invention.