TWO-DIMENSIONAL METAL/SEMICONDUCTOR/METAL DEVICE WITH NON-VOLATILE AND LINEARLY TUNABLE OPTICAL RESPONSIVITY BASED ON SULFUR VACANCY MIGRATION, AND PREPARATION METHOD THEREOF

Abstract

Provided are a two-dimensional (2D) metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration and a preparation method thereof. The 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration includes a device base, a source electrode, and a drain electrode; where the MSM device base includes a silicon/silica (Si/SiO.sub.2) substrate and a molybdenum sulfide layer which are sequentially stacked; and the source electrode and the drain electrode are located on a surface of the molybdenum sulfide layer.

Claims

1. A two-dimensional (2D) metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration, comprising a device base, a source electrode, and a drain electrode; wherein the metal/semiconductor/metal (MSM) device base comprises a silicon/silica (Si/SiO.sub.2) substrate and a molybdenum sulfide layer which are sequentially stacked; and the source electrode and the drain electrode are located on a surface of the molybdenum sulfide layer.

2. The 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration of claim 1, wherein the molybdenum sulfide layer is composed of molybdenum sulfide nano-flakes, and each of the molybdenum sulfide nano-flakes has a flake diameter of 10 m to 15 m and a thickness of 10 nm to 50 nm.

3. The 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration of claim 1, wherein each of the source electrode and the drain electrode is made of Cr and Au.

4. The 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration of claim 1, wherein the Si/SiO.sub.2 substrate has a thickness of 500 m/285 nm to 305 nm; the molybdenum sulfide layer has a thickness of 10 nm to 50 nm; and each of the source electrode and the drain electrode is made of Cr and Au, the source electrode has a thickness of 1 nm to 3 nm, and the drain electrode has a thickness of 30 nm to 50 nm.

5. The 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration of claim 2, wherein the Si/SiO.sub.2 substrate has a thickness of 500 m/285 nm to 305 nm; the molybdenum sulfide layer has a thickness of 10 nm to 50 nm; and each of the source electrode and the drain electrode is made of Cr and Au, the source electrode has a thickness of 1 nm to 3 nm, and the drain electrode has a thickness of 30 nm to 50 nm.

6. A method for preparing the 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration of claim 1, comprising the following steps: (1) transferring molybdenum sulfide nano-flakes onto the Si/SiO.sub.2 substrate, and applying a photoresist onto the molybdenum sulfide nano-flakes to obtain a molybdenum sulfide layer covered with the photoresist on a surface of the Si/SiO.sub.2 substrate; (2) subjecting the photoresist to etching to obtain an exposed pattern, with an exposed source electrode window and an exposed drain electrode window on the surface of the molybdenum sulfide layer; (3) subjecting the molybdenum sulfide layer with the exposed source electrode window and the exposed drain electrode window in step (2) to O.sub.2 plasma etching and Ar plasma etching sequentially; and (4) performing evaporation deposition of metal on a surface of the molybdenum sulfide layer with the exposed source electrode window and the exposed drain electrode window after plasma etching, and stripping the photoresist, to obtain the source electrode and the drain electrode on the surface of the molybdenum sulfide layer, thereby obtaining the 2D metal/semiconductor/metal (MSM) device based on sulfur vacancy migration.

7. The method of claim 6, wherein in step (3), the O.sub.2 plasma etching is conducted for 10 s to 15 s, the Ar plasma etching is conducted for 30 s to 40 s, and the O.sub.2 plasma etching and the Ar plasma etching each are conducted under a vacuum degree of 110.sup.7 Torr to 810.sup.7 Torr and at a gas flow rate of 25 sccm to 35 sccm.

8. The method of claim 6, wherein the evaporation deposition in step (4) is conducted at an independent temperature of 1,200 C. to 1,500 C. and an independent speed of 0.1 to 0.5 ; and the evaporation deposition is conducted under an independent vacuum degree of 610.sup.7 Torr to 110.sup.6 Torr.

9. The method of claim 6, wherein subjecting the photoresist to etching is performed by electron beam lithography; and stripping the photoresist is performed by immersing in acetone.

10. The method of claim 6, wherein the molybdenum sulfide layer is composed of molybdenum sulfide nano-flakes, and each of the molybdenum sulfide nano-flakes has a flake diameter of 10 m to 15 m and a thickness of 10 nm to 50 nm.

11. The method of claim 6, wherein each of the source electrode and the drain electrode is made of Cr and Au.

12. The method of claim 6, wherein the Si/SiO.sub.2 substrate has a thickness of 500 m/285 nm to 305 nm; the molybdenum sulfide layer has a thickness of 10 nm to 50 nm; and each of the source electrode and the drain electrode is made of Cr and Au, the source electrode has a thickness of 1 nm to 3 nm, and the drain electrode has a thickness of 30 nm to 50 nm.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0024] FIG. 1 shows a structural schematic diagram of the 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration;

[0025] FIG. 2 shows a schematic flow chart for preparation of the 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration;

[0026] FIG. 3 shows output characteristic curves of the MSM device obtained in Example 1 under illumination after applying different-voltage pulses;

[0027] FIG. 4 shows a histogram of short-circuit current change of the MSM device obtained in Example 1 after applying voltage pulse;

[0028] FIG. 5 shows a linear relationship curve between short-circuit current and optical power of the MSM device obtained in Example 1 under illumination;

[0029] FIG. 6 shows a photocurrent duration curve of the MSM device obtained in Example 1 under illumination without applying bias voltage;

[0030] FIG. 7 shows output characteristic curves of the untreated MSM device obtained in Comparative Example 1 after applying different-voltage pulses; and

[0031] FIGS. 8A-8B show output characteristic curves of the MSM device of WS.sub.2 obtained in Comparative Example 2 in initial state and after applying voltage pulse.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0032] The present disclosure provides a two-dimensional (2D) metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration, including a device base, a source electrode, and a drain electrode; where [0033] the 2D metal/semiconductor/metal (MSM) device base includes a silicon/silica (Si/SiO.sub.2) substrate and a molybdenum sulfide layer which are sequentially stacked; and [0034] the source electrode and the drain electrode are located on a surface of the molybdenum sulfide layer.

[0035] The metal/semiconductor/metal (MSM) device base based on sulfur vacancy migration includes a silicon/silica (Si/SiO.sub.2) substrate and a molybdenum sulfide layer which are sequentially stacked. In some embodiments of the present disclosure, the Si/SiO.sub.2 substrate has a thickness of 500 m/285 nm to 305 nm, and preferably 500 m/300 nm.

[0036] In some embodiments of the present disclosure, the molybdenum sulfide layer has a thickness of 10 nm to 50 nm, and preferably 15 nm to 25 nm. In the present disclosure, the molybdenum sulfide layer is composed of molybdenum sulfide nano-flakes. In some embodiments of the present disclosure, each of the monolithic molybdenum sulfide nano-flakes has a flake diameter of 10 m to 15 m and a thickness of 15 nm to 25 nm.

[0037] In some embodiments of the present disclosure, each of the source electrode and the drain electrode is made of Cr and Au. In some embodiments of the present disclosure, the source electrode has a thickness of 1 nm to 3 nm, and the drain electrode has a thickness of 30 nm to 50 nm. In some embodiments of the present disclosure, the source electrode and the drain electrode are located at two terminals of the molybdenum sulfide layer, respectively.

[0038] The present disclosure provides a method for preparing the 2D metal/semiconductor/metal (MSM) device based on sulfur vacancy migration described above, including the following steps: [0039] (1) transferring the molybdenum sulfide nano-flakes onto the Si/SiO.sub.2 substrate, and applying a photoresist onto the molybdenum sulfide nano-flakes to obtain a molybdenum sulfide layer covered with the photoresist on a surface of the Si/SiO.sub.2 substrate; [0040] (2) subjecting the photoresist to etching to obtain an exposed pattern, with an exposed source electrode window and an exposed drain electrode window on the surface of the in molybdenum sulfide layer; [0041] (3) subjecting the molybdenum sulfide layer with the exposed source electrode window and the exposed drain electrode window in step (2) to O.sub.2 plasma etching and Ar plasma etching sequentially; and [0042] (4) performing evaporation deposition of metal on a surface of the molybdenum sulfide layer with the exposed source electrode window and the exposed drain electrode window, and stripping the photoresist, to obtain the source electrode and the drain electrode on the surface of the molybdenum sulfide layer, thereby obtaining the 2D metal/semiconductor/metal (MSM) device based on sulfur vacancy migration.

[0043] In the present disclosure, molybdenum sulfide nano-flakes are loaded on a surface of the Si/SiO.sub.2 substrate, and a photoresist is applied onto the molybdenum sulfide nano-flakes, to obtain a molybdenum sulfide layer covered with the photoresist on the surface of the Si/SiO.sub.2 substrate. In some embodiments of the present disclosure, the molybdenum sulfide nano-flakes are obtained by mechanical exfoliation. In some embodiments of the present disclosure, the mechanical exfoliation includes the following steps: placing a molybdenum sulfide bulk material flake on an adhesive tape, and repeatedly folding and sticking to obtain the molybdenum sulfide nano-flakes on a surface of the adhesive tape. In some embodiments of the present disclosure, the adhesive tape is a blue transparent adhesive tape. In some embodiments of the present disclosure, the method further includes transferring the molybdenum sulfide nano-flakes onto the surface of the Si/SiO.sub.2 substrate by a adhesive tape.

[0044] In some embodiments of the present disclosure, the photoresist is polymethyl methacrylate (PMMA). In some embodiments of the present disclosure, the photoresist is applied by spin coating. In some embodiments of the present disclosure, the spin coating is conducted at a rate of 4,000 r/min to 5,000 r/min, and preferably 4,500 r/min. In some embodiments of the present disclosure, after the photoresist is applied, a resulting system is subjected to heat curing. In some embodiments of the present disclosure, the heat curing is conducted at a temperature of 130 C. to 180 C., and preferably 140 C. to 160 C. In some embodiments of the present disclosure, the heat curing is conducted for 5 min to 8 min, and preferably 6 min to 7 min.

[0045] In the present disclosure, the photoresist is subjected to etching to expose a source electrode window and a drain electrode window on a surface of the molybdenum sulfide layer, and the evaporation deposition is performed on a surface of the photoresist and exposed windows to form the source electrode and the drain electrode. In some embodiments of the present disclosure, the etching of the photoresist is conducted by electron beam lithography.

[0046] In some embodiments of the present disclosure, MoS.sub.2 material of the source electrode window and the drain electrode window is subjected to plasma etching, preferably O.sub.2 plasma etching and Ar plasma etching sequentially. In some embodiments of the present disclosure, the O.sub.2 plasma etching is conducted for 10 s to 20 s, and preferably 15 s. In some embodiments of the present disclosure, the Ar plasma etching is conducted for 30 s to 50 s, and preferably 40 s. In some embodiments of the present disclosure, the O.sub.2 plasma etching and the Ar plasma etching each are conducted under a vacuum degree of 110.sup.7 Torr to 810.sup.7 Torr, and preferably 110.sup.7 Torr to 210.sup.7 Torr. In some embodiments of the present disclosure, the O.sub.2 plasma etching and the Ar plasma etching each are conducted at a gas (O.sub.2/Ar) flow rate of 25 sccm to 40 sccm, and preferably 30 sccm to 35 sccm.

[0047] In some embodiments of the present disclosure, a metal for the vacuum evaporation are Cr and Au. In some embodiments of the present disclosure, the evaporation deposition is conducted at a temperature of 1,200 C. to 1,500 C., and preferably 1,300 C. to 1,400 C. In some embodiments of the present disclosure, the evaporation deposition is conducted at a speed of 0.1 to 0.5 , and preferably 0.3 to 0.4 . In some embodiments of the present disclosure, the evaporation deposition is conducted under a vacuum degree of 610.sup.7 Torr to 110.sup.6 Torr, and preferably 810.sup.7 Torr to 910.sup.7 Torr.

[0048] In some embodiments of the present disclosure, the photoresist is stripped by immersing in acetone. In some embodiments of the present disclosure, the immersing is conducted for 30 min to 60 min, and preferably 40 min to 50 min.

[0049] In the present disclosure, the photoresist is stripped to obtain the two-dimensional (2D) metal/semiconductor/metal (MSM) device based on sulfur vacancy migration.

[0050] In the present disclosure, FIG. 1 shows a structural schematic diagram of the 2D metal/semiconductor/metal (MSM) device based on sulfur vacancy migration, and a schematic flow chart for preparation thereof is shown in FIG. 2. In FIG. 1, 1 refers to p-type heavily doped silicon, 2 refers to a silica layer, 3 refers to a molybdenum sulfide layer, 4 refers to a treated molybdenum sulfide layer, 5 refers to a chromium (Cr) metal electrode, and 6 refers to a gold (Au) metal electrode. In FIG. 2, 7 refers to polymethyl methacrylate (PMMA) photoresist.

[0051] The 2D metal/semiconductor/metal (MSM) device based on sulfur vacancy migration and preparation method thereof according to the present disclosure will be described in detail in conjunction with examples below, but these examples could not be understood as limiting the scope of the present disclosure.

Example 1

[0052] A method for preparing a two-dimensional (2D) metal/semiconductor/metal (MSM) device based on sulfur vacancy migration was performed as follows:

[0053] A molybdenum sulfide bulk material was exfoliated into layered molybdenum sulfide flakes by mechanical exfoliation. The molybdenum sulfide flakes were soaked in a hot acetone solution for 1 h to remove tape residue on a surface thereof. The molybdenum sulfide flakes were transferred onto a silicon/silica substrate. A PMMA solution was applied onto a surface thereof through spin coating at a rotating speed of 5000 r/min, and then baked at a temperature of 150 C. for 5 min to obtain a photoresist layer. Electron beam lithography (EBL) was used to locate a source electrode window and a drain electrode window. O.sub.2 plasma etching and Ar plasma etching were sequentially conducted for 10 s and 30 s, respectively, under a vacuum degree of 210.sup.7 Torr and at a gas flow rate of 30 sccm. Evaporation deposition was performed under a vacuum degree of 610.sup.7 Torr and at a temperature of 1,500 C., to obtain a 1 nm Cr film and a 45 nm Au film.

[0054] The photoresist was stripped in an acetone solution to form a source metal electrode and a drain metal electrode, thereby obtaining the 2D metal/semiconductor/metal (MSM) device based on sulfur vacancy migration.

[0055] Output characteristic curves of the MSM device obtained in Example 1 under illumination after applying different-voltage pulses are shown in FIG. 3. As shown in FIG. 3, under illumination of 520 nm visible light, a short-circuit current of the device changes from 6 nA to 1.5 nA after applying 100 voltage pulses with a voltage of 15 V and a duration of 100 ms. Immediately after applying 50 voltage pulses with a voltage of 20 V and a duration of 100 ms, the short-circuit current of the device changes from 1.5 nA to 50 nA. Under an action of the pulse voltage, sulfur vacancies caused by plasma treatment migrate, which affects the changes of Schottky barrier between the metal and the semiconductor at the electrode position and produces asymmetric barrier, thereby adjusting change in the short-circuit current of the device under a condition of zero bias. A histogram of short-circuit current change of the MSM device obtained in Example 1

[0056] after applying voltage pulse is shown in FIG. 4. As shown in FIG. 4, under control of the voltage pulse, the short-circuit current of the device appears 5 positive and 5 negative and 0 states, totaling 11 different states, indicating that the device has excellent short-circuit current control ability.

[0057] Change curves of the short-circuit current of the MSM device obtained in Example 1 under different optical powers are shown in FIG. 5. As shown in FIG. 5, the short-circuit current of the device shows good linearity over an optical power of 16 mW/cm.sup.2 to 2600 mW/cm.sup.2.

[0058] A photocurrent duration curve of the MSM device obtained in Example 1 without applying bias voltage and under illumination is shown in FIG. 6. As shown in FIG. 6, the short-circuit current of the device is basically kept in a stable state within 1000 s, and the photocurrent has a good storage capacity, indicating non-volatile characteristics of the photocurrent of the device.

Comparative Example 1

[0059] A metal/semiconductor/metal (MSM) device based on pristine MoS.sub.2 was prepared. The specific operations were the same as that in Example 1, except that materials at the source electrode and the drain electrode were not treated with O.sub.2 plasma and Ar plasma.

[0060] A photocurrent testing was conducted on the molybdenum sulfide (MoS.sub.2) MSM device obtained in Comparative Example 1. Under an action of a voltage pulse with a voltage of 15 V and a duration of 100 ms, 500, 1000 and 1500 voltage pulses were applied, and the short-circuit current of the device does not change significantly compared with that of the initial state device, as shown in FIG. 7. The results show that there is no regulation phenomenon of the short-circuit current, and the regulation ability of light short-circuit current is significantly weaker than that of the molybdenum sulfide metal/semiconductor/metal (MSM) based on sulfur vacancy migration obtained in Example 1 under illumination conditions.

Comparative Example 2

[0061] A WS.sub.2 metal/semiconductor/metal (MSM) device based on sulfur vacancy migration was prepared. The specific operations were the same as that in Example 1, except that the MoS.sub.2 was replaced by WS.sub.2.

[0062] A photocurrent testing was conducted on the tungsten sulfide (WS.sub.2) MSM device obtained in Comparative Example 2. In the initial state, the device showed a short-circuit current of 70 nA. After applying 500 voltage pulses with a voltage of 15 V and a duration of 100 ms, the short-circuit current of the device became 330 nA, indicating the short-circuit current regulation ability of the device after the voltage was applied, as shown in FIGS. 8A-8B.

[0063] The above descriptions are merely preferred embodiments of the present disclosure. It should be noted that a person of ordinary skill in the art may further make several improvements and modifications without departing from the principle of the present disclosure, but such improvements and modifications should be deemed as falling within the protection scope of the present disclosure.