METHOD FOR PRODUCING SILICON CARBIDE FIBERS

Abstract

In a method for producing polycarbosilane by a liquid phase-gas phase thermolysis condensation method, provided is a method for producing polycarbosilane for silicon carbide fiber production having fewer processes than known production methods. The method for producing polycarbosilane for silicon carbide fiber production according to an aspect of the present invention includes: a polycarbosilane synthesis step of synthesizing polycarbosilane having a weight average molecular weight of 9000 or greater, the polycarbosilane synthesis step including the processes of: heating a raw material containing a cyclic silane compound at a first temperature to generate a gas phase, heating the gas phase at a second temperature higher than the first temperature to generate polycarbosilane, and by cooling the polycarbosilane to return to the raw material and heating at the first temperature, increasing a molecular weight of the polycarbosilane.

Claims

1. A method for producing silicon carbide fibers, the method comprising: a polycarbosilane synthesis step of synthesizing polycarbosilane having a weight average molecular weight of 9000 or greater, the polycarbosilane synthesis step comprising performing repeatedly processes of: heating a raw material containing a cyclic silane compound at a first temperature to generate a gas phase, heating the gas phase at a second temperature that is higher than the first temperature to generate polycarbosilane, and by cooling the polycarbosilane to return to the raw material and heating at the first temperature, increasing a molecular weight of the polycarbosilane; a spinning step of forming the polycarbosilane synthesized in the polycarbosilane synthesis step into a fibrous form; and a pyrolyzing step of pyrolyzing the polycarbosilane fiber produced in the spinning step; wherein the method does not comprise a step of adjusting the molecular weight by removing polycarbosilane having a low molecular weight from the polycarbosilane synthesized in the polycarbosilane synthesis step.

2. The method for producing silicon carbide fibers according to claim 1, wherein, in the polycarbosilane synthesis step, polycarbosilane having a bonding index, which is an indicator of degree of branching, as expressed by Formula (1) of 2.52 or greater is synthesized: $\begin{array}{cc}\left[\mathrm{Math}.1\right]& \\ \mathrm{BONDING}\mathrm{INDEX}=\frac{\begin{array}{c}{X}_{\mathrm{CH}3}1+X_{\mathrm{CH}2}2+X_{\mathrm{CH}}3+X_C\\ 4+Y_{\mathrm{SiH}3}1+Y_{\mathrm{SiH}2}2+Y_{\mathrm{SiH}}3+Y_{\mathrm{Si}}4\end{array}}{\begin{array}{c}{X}_{\mathrm{CH}3}+X_{\mathrm{CH}2}+X_{\mathrm{CH}}+X_C+Y_{\mathrm{SiH}3}+Y_{\mathrm{SiH}2}+\\ Y_{\mathrm{SiH}}+Y_{\mathrm{Si}}\end{array}}& \left(1\right)\end{array}$ where in Formula (1), X.sub.CH3, X.sub.CH2, X.sub.CH, and X.sub.C are values obtained by dividing weight percentages of primary, secondary, tertiary, and quaternary carbon atoms, respectively, by 12, and Y.sub.SiH3, Y.sub.SiH2, Y.sub.SiH, and Y.sub.Si are values obtained by dividing weight percentages of primary, secondary, tertiary, and quaternary silicon atoms, respectively, by 28.086.

3. The method for producing silicon carbide fibers according to claim 1, wherein, in the polycarbosilane synthesis step, polycarbosilane satisfying the following condition is synthesized: a synthesized polycarbosilane powder remains in powder state when heated at 390 C. for 2 minutes.

4. The method for producing silicon carbide fibers according to claim 1, wherein the cyclic silane compound is dodecamethylcyclohexasilane.

5. The method for producing silicon carbide fibers according to claim 3, wherein the cyclic silane compound is dodecamethylcyclohexasilane.

6. The method for producing silicon carbide fibers according to claim 2, wherein, in the polycarbosilane synthesis step, polycarbosilane satisfying the following condition is synthesized: a synthesized polycarbosilane powder remains in powder state when heated at 390 C. for 2 minutes.

7. The method for producing silicon carbide fibers according to claim 2, wherein the cyclic silane compound is dodecamethylcyclohexasilane.

8. The method for producing silicon carbide fibers according to claim 6, wherein the cyclic silane compound is dodecamethylcyclohexasilane.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0017] FIG. 1 is a view illustrating a liquid phase-gas phase thermolysis apparatus 10 that can be used for polycarbosilane synthesis.

[0018] FIG. 2 is a diagram illustrating melting behavior of polycarbosilane and tensile strength of SiC fibers obtained through pyrolyzing at 1000 C.

[0019] FIG. 3 is a chart illustrating the relationship between the number of molecular weight adjustment and total yield after a synthesis step.

DESCRIPTION OF EMBODIMENTS

1. Method for Producing Polycarbosilane for Silicon Carbide Fiber Production

[0020] The method for producing polycarbosilane for silicon carbide fiber production according to an aspect of the present invention (hereinafter, referred to as method for producing polycarbosilane) includes: a polycarbosilane synthesis step of synthesizing polycarbosilane having a weight average molecular weight of 9000 or greater, the polycarbosilane synthesis step including the processes of: heating a raw material containing a cyclic silane compound at a first temperature to generate a gas phase (hereinafter, referred to as first heating process), heating the gas phase at a second temperature higher than the first temperature to generate polycarbosilane (hereinafter, referred to as second heating process), and by cooling the polycarbosilane to return to the raw material and by heating the returned polycarbosilane at the first temperature, increasing a molecular weight of the polycarbosilane (hereinafter, referred to as molecular weight increasing process). According to such a configuration, polycarbosilane for silicon carbide fiber production can be produced by fewer processes than known production methods for a method for producing polycarbosilane by a liquid phase-gas phase thermolysis condensation method.

[0021] The reason is as follows. Polycarbosilane produced by the method for producing polycarbosilane for silicon carbide fiber production according to an aspect of the present invention is characterized in that fibers are less likely to fuse during pyrolyzing in the producing process of silicon carbide fibers. Thus, performing a molecular weight adjustment step to remove low molecular weight polycarbosilane, which can be a cause of fusion, is not required, and the polycarbosilane for silicon carbide fiber production can be produced by fewer processes than known production methods for a method for producing polycarbosilane by a liquid phase-gas phase thermolysis condensation method. Note that the polycarbosilane having a low molecular weight refers to polycarbosilane having a molecular weight of 5500 or less.

[0022] In the present description, molecular weight adjustment step refers to a step of removing polycarbosilane having a low molecular weight from the polycarbosilane synthesized in the polycarbosilane synthesis step. Examples of the method for removing polycarbosilane having a low molecular weight include a method of removing polycarbosilane having a low molecular weight including adding a solvent to the polycarbosilane synthesized in the polycarbosilane synthesis step and removing a dissolved component. In general, the solvent to add to the polycarbosilane is not particularly limited as long as it is a solvent capable of extracting polycarbosilane having a low molecular weight, and is appropriately selected depending on the range of molecular weights desired to be removed.

Polycarbosilane Synthesis Step

[0023] The polycarbosilane synthesis step is a step that includes a first heating process, a second heating process, and a molecular weight increasing process and that synthesizes polycarbosilane having a weight average molecular weight of 9000 or greater.

[0024] The first heating process is a process of generating a gas phase by heating a raw material containing a cyclic silane compound at a first temperature. The raw material containing the cyclic silane compound may be a solid, a liquid, or a mixture of a liquid and a solid. As used herein, the first temperature shows the measurement result of an internal temperature of a reaction vessel in which the raw material is placed. That is, the first temperature is the temperature of a content itself of the reaction vessel. The first temperature is not particularly limited as long as it is a temperature at which at least a part of the cyclic silane compound can be vaporized to generate a gas phase. Typically, it may be in a range of from 100 C. to 500 C., and may be in a range of from 400 C. to 500 C. When heating is performed at the temperature, the cyclic silane compound is thermally decomposed to generate a gas phase, and the gas phase is also generated by sublimation or vaporization after liquefaction of the cyclic silane compound.

[0025] In the method for producing polycarbosilane according to the one aspect of the present invention, the cyclic silane compound is a compound having a skeleton composed only of a SiSi bond as a main chain, and the main chain forms a ring. The number of members of the cyclic silane compound used in the method for producing the polycarbosilane is preferably 15 or less, more preferably 10 or less, and even more preferably 7 or less. The cyclic silane compound may have a single ring or a plurality of rings. In addition, the side chain of the cyclic silane compound may have any structure. Examples of the cyclic silane compound include octamethylcyclotetrasilane, decamethylcyclopentasilane, dodecamethylcyclohexasilane, and tetradecamethylcycloheptasilane. From the viewpoint of raw material supply, the cyclic silane compound is preferably dodecamethylcyclohexasilane.

[0026] An amount of the cyclic silane compound used in the polycarbosilane synthesis step can be appropriately adjusted depending on an apparatus for synthesizing the polycarbosilane and a desired amount of the polycarbosilane synthesized.

[0027] The second heating process is a process of heating the gas phase generated in the first heating process at a second temperature higher than the first temperature to generate polycarbosilane. By the second heating process, the SiSi bond of the cyclic silane compound can be radically cleaved and rearranged to produce polycarbosilane. As used herein, the second temperature shows the measurement result of an internal temperature of a reaction tube which contains the gas phase, when the gas phase generated from the raw material containing the cyclic silane compound is heated. That is, the second temperature is the temperature of the gas phase itself heated in the second heating process. The generated polycarbosilane is cooled and returned to the raw material undergoing the first heat process.

[0028] From the viewpoint of the oxygen content of the synthesized polycarbosilane, the oxygen content of the polycarbosilane is unlikely to increase, and thus the second temperature is preferably 670 C. or lower, more preferably 650 C. or lower, and even more preferably 600 C. or lower. As a result of the study, in the method of the present embodiment using the cyclic silane compound as the raw material, it is confirmed that the viscosity of the generated polycarbosilane is significantly increased when the second temperature is raised, and clogging of the pipe is caused depending on the apparatus. Accordingly, from the viewpoint of operability of the apparatus for synthesizing the polycarbosilane, the second temperature is preferably 650 C. or lower to prevent the pipe of the apparatus from being clogged with the synthesized polycarbosilane. In addition, the second temperature is preferably 500 C. or higher from the viewpoint of rearranging the cyclic silane compound, and is preferably 600 C. or higher from the viewpoint of increasing branching of the polycarbosilane. Note that the branching of the polycarbosilane will be described below.

[0029] The molecular weight increasing process is a process in which the polycarbosilane generated in the second heating process is cooled, returned to the raw material, and heated at the first temperature to increase the molecular weight of the polycarbosilane. By the molecular weight increasing process, the polycarbosilane generated by the second heating process can be polycondensed to increase the molecular weight. The cooling temperature is not particularly limited as long as the polycarbosilane in a gaseous state can be cooled to such an extent that it is liquefied. The first temperature is the same as the description of the first temperature in the first heating process.

[0030] When a series of these reactions is repeatedly performed, the molecular weight of the polycarbosilane is gradually increased and polycarbosilane having a higher molecular weight can be obtained.

[0031] The reaction time in the polycarbosilane synthesis step can be appropriately adjusted based on the first temperature. By adjusting the first temperature and the reaction time, the weight average molecular weight of the polycarbosilane can be adjusted. From the viewpoint of obtaining polycarbosilane having a weight average molecular weight of 9000 or greater, in a case where the first temperature is from 400 to 500 C., the reaction time may be 6 hours or longer. As the first temperature is lower, the reaction time can be made longer, and as the first temperature is higher, the reaction time can be made shorter.

[0032] As described above, polycarbosilane synthesized by the polycarbosilane synthesis step described above becomes polycarbosilane having a weight average molecular weight of 9000 or greater. Thus, according to the method for producing polycarbosilane for silicon carbide fiber production according to an aspect of the present invention, the polycarbosilane for silicon carbide fiber production can be produced without performing a molecular weight adjustment step.

[0033] Furthermore, the polycarbosilane produced in the polycarbosilane synthesis step preferably has a bonding index expressed by the following Formula (1), which is an indicator of a degree of branching, of 2.52 or greater from the viewpoint of improving tensile strength of the silicon carbide fibers:

[00001]$\begin{array}{cc}\left[\mathrm{Math}.1\right]& \\ \mathrm{BONDING}\mathrm{INDEX}=\frac{\begin{array}{c}{X}_{\mathrm{CH}3}1+X_{\mathrm{CH}2}2+X_{\mathrm{CH}}3+X_C\\ 4+Y_{\mathrm{SiH}3}1+Y_{\mathrm{SiH}2}2+Y_{\mathrm{SiH}}3+Y_{\mathrm{Si}}4\end{array}}{\begin{array}{c}{X}_{\mathrm{CH}3}+X_{\mathrm{CH}2}+X_{\mathrm{CH}}+X_C+Y_{\mathrm{SiH}3}+Y_{\mathrm{SiH}2}+\\ Y_{\mathrm{SiH}}+Y_{\mathrm{Si}}\end{array}}& \left(1\right)\end{array}$ [0034] where in Formula (1), [0035] X.sub.CH3, X.sub.CH2, X.sub.CH, and X.sub.C are values obtained by dividing weight percentages of primary, secondary, tertiary, and quaternary carbon atoms, respectively, by 12, and [0036] Y.sub.SiH3, Y.sub.SiH2, Y.sub.SiH, and Y.sub.Si are values obtained by dividing weight percentages of primary, secondary, tertiary, and quaternary silicon atoms, respectively, by 28.086.

[0037] The term bonding index as used herein is an indicator of the degree of branching of polycarbosilane and is a value determined by Formula (1) described above. As used herein, the term branching refers to a moiety in which a carbon atom or silicon atom is bonded to an atom other than a hydrogen atom. For example, branching of CH.sub.3CH.sub.3 refers to a moiety in which the carbon atom described on the left is bonded to an atom other than a hydrogen atom and a moiety in which the carbon atom described on the right is bonded to an atom other than a hydrogen atom. Similarly, branching of silicon atoms refers to a moiety in which all silicon atoms are bonded to an atom other than a hydrogen atom. Thus, a higher bonding index leads to a more highly branched polycarbosilane.

[0038] In Formula (1), X.sub.CH3, X.sub.CH2, X.sub.CH, and X.sub.C are values obtained by dividing weight percentages of primary, secondary, tertiary, and quaternary carbon atoms, respectively, by 12. As used herein, the term primary carbon refers to a carbon to which three hydrogens are bonded. The term secondary carbon refers to a carbon to which two hydrogens are bonded. The term tertiary carbon refers to a carbon to which one hydrogen is bonded. The term quaternary carbon refers to a carbon to which no hydrogen is bonded. In Formula (1), 12 is the atomic weight of carbon. Thus, X.sub.CH3, X.sub.CH2, X.sub.CH, and X.sub.C are specifically as represented by Formulas (2) to (5) described below:

[00002]$\begin{array}{cc}\left[\mathrm{Math}.2\right]& \\ X_{\mathrm{CH}3}=\frac{\mathrm{wt}.\%\mathrm{of}\mathrm{Primary}\mathrm{carbon}\mathrm{atoms}}{12}& \left(2\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.3\right]& \\ X_{\mathrm{CH}2}=\frac{\mathrm{wt}.\%\mathrm{of}\mathrm{Secondary}\mathrm{carbon}\mathrm{atoms}}{12}& \left(3\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.4\right]& \\ X_{\mathrm{CH}}=\frac{\mathrm{wt}.\%\mathrm{of}\mathrm{Tertiary}\mathrm{carbon}\mathrm{atoms}}{12}& \left(4\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.5\right]& \\ X_C=\frac{\mathrm{wt}.\%\mathrm{of}\mathrm{Quaternary}\mathrm{carbon}\mathrm{atoms}}{12}& \left(5\right)\end{array}$

[0039] Here, the weight percentages of primary, secondary, and tertiary carbon atoms are values obtained by dividing the weight percentage of hydrogen atoms of each carbon by a product of the number of hydrogen atoms bonded to each carbon and the atomic weight of hydrogen, and multiplying the result by the atomic weight of carbon. Note that as used herein, 1 is assumed to be the atomic weight of hydrogen and used for calculation. The weight percentage of the quaternary carbon atom is a value obtained by subtracting the weight percentages of the primary, secondary, and tertiary carbon atoms from the elemental analysis value of carbon atoms. Thus, the weight percentages of primary, secondary, tertiary, and quaternary carbon atoms are specifically as represented by Formulas (6) to (9) described below: The elemental analysis value of carbon atoms can be determined by a known method.

[00003]$\begin{array}{cc}\left[\mathrm{Math}.6\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Primary}\mathrm{carbon}\mathrm{atoms}=\frac{\begin{array}{c}\mathrm{wt}.\%\mathrm{of}\mathrm{Hydrogen}\\ \mathrm{atoms}\mathrm{of}\mathrm{primary}\mathrm{carbon}\end{array}}{3}12& \left(6\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.7\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Secondary}\mathrm{carbon}\mathrm{atoms}=\frac{\begin{array}{c}\mathrm{wt}.\%\mathrm{of}\mathrm{Hydrogen}\\ \mathrm{atoms}\mathrm{of}\mathrm{secondary}\mathrm{carbon}\end{array}}{2}12& \left(7\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.8\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Tertiary}\mathrm{carbon}\mathrm{atoms}=\frac{\begin{array}{c}\mathrm{wt}.\%\mathrm{of}\mathrm{Hydrogen}\\ \mathrm{atoms}\mathrm{of}\mathrm{Tertiary}\mathrm{carbon}\end{array}}{1}12& \left(8\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.9\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Quaternary}\mathrm{carbon}\mathrm{atoms}=\mathrm{Elemental}\mathrm{analysis}\mathrm{value}\mathrm{of}\mathrm{carbon}\mathrm{atoms}(\mathrm{wt}.\%)-\left(\mathrm{wt}.\%\mathrm{of}\mathrm{Primary}\mathrm{carbon}\mathrm{atoms}+\mathrm{wt}.\%\mathrm{of}\mathrm{Secondary}\mathrm{carbon}\mathrm{atoms}+\mathrm{wt}.\%\mathrm{of}\mathrm{Tertiary}\mathrm{carbon}\mathrm{atoms}\right)& \left(9\right)\end{array}$

[0040] Here, the weight percentages of hydrogen atoms of primary, secondary, and tertiary carbons are values obtained by multiplying area ratios of .sup.1H-NMR of primary, secondary, and tertiary carbons by the elemental analysis value of hydrogen atoms, respectively. The area ratios of .sup.1H-NMR of primary, secondary, and tertiary carbons are ratios of respective area ratios of hydrogen atoms of primary, secondary, and tertiary carbons to hydrogen atoms of SiH measured by .sup.1H-NMR and a total value of area ratios obtained by normalizing area values of hydrogen atoms of primary, secondary, and tertiary carbons with hydrogen atoms of SiH. Thus, the weight percentages of the hydrogen atoms of the primary, secondary, and tertiary carbons are specifically as represented by Formulas (10) to (12) described below:

[00004]$\begin{array}{cc}\left[\mathrm{Math}.10\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Hydrogen}\mathrm{atoms}\mathrm{of}\mathrm{primary}\mathrm{carbon}=\mathrm{Area}\mathrm{ratio}{\mathrm{of}}^{1}H-NMR\mathrm{of}\mathrm{primary}\mathrm{carbon}\mathrm{Elemental}\mathrm{analysis}\mathrm{value}\mathrm{of}\mathrm{hydrogen}\mathrm{atoms}(\mathrm{wt}.\%)& \left(10\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.11\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Hydrogen}\mathrm{atoms}\mathrm{of}\mathrm{secondary}\mathrm{carbon}=\mathrm{Area}\mathrm{ratio}{\mathrm{of}}^{1}H-NMR\mathrm{of}\mathrm{secondary}\mathrm{carbon}\mathrm{Elemental}\mathrm{analysis}\mathrm{value}\mathrm{of}\mathrm{hydrogen}\mathrm{atoms}(\mathrm{wt}.\%)& \left(11\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.12\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Hydrogen}\mathrm{atoms}\mathrm{of}\mathrm{tertiary}\mathrm{carbon}=\mathrm{Area}\mathrm{ratio}{\mathrm{of}}^{1}H-NMR\mathrm{of}\mathrm{tertiary}\mathrm{carbon}\mathrm{Elemental}\mathrm{analysis}\mathrm{value}\mathrm{of}\mathrm{hydrogen}\mathrm{atoms}(\mathrm{wt}.\%)& \left(12\right)\end{array}$

[0041] The area values of the hydrogen atoms of the primary, secondary, and tertiary carbons in the polycarbosilane in .sup.1H-NMR can be determined by calculating integration values using a signal of 5.5 to 3.5 ppm as a signal derived from hydrogen on tertiary silicon (SiH<), a signal of 1.0 to 0 ppm as a signal derived from hydrogen on primary carbon (CH.sub.3), a signal of 0 to 0.4 ppm as a signal derived from hydrogen on secondary carbon (CH.sub.2), and a signal of 0.4 to 1.0 ppm as a signal derived from hydrogen on tertiary carbon (CH<). The elemental analysis value of hydrogen atoms can be determined by a known method.

[0042] In Formula (1), Y.sub.SiH3, Y.sub.SiH2, Y.sub.SiH, and Y.sub.Si are values obtained by dividing the weight percentages of primary, secondary, tertiary, and quaternary silicon atoms, respectively, by 28.086. As used herein, the term primary silicon refers to silicon to which three hydrogens are bonded. The term secondary silicon refers to silicon to which two hydrogens are bonded. The term tertiary silicon refers to silicon to which one hydrogen is bonded. The term quaternary silicon refers to silicon to which no hydrogen is bonded. In Formula (1), 28.086 is the atomic weight of silicon. Thus, Y.sub.SiH3, Y.sub.SiH2, Y.sub.SiH, and Y.sub.Si are specifically as represented by Formulas (13) to (16) described below:

[00005]$\begin{array}{cc}\left[\mathrm{Math}.13\right]& \\ Y_{\mathrm{SiH}3}=\frac{\mathrm{wt}.\%\mathrm{of}\mathrm{Primary}\mathrm{silicon}\mathrm{atoms}}{28.086}& \left(13\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.14\right]& \\ Y_{\mathrm{SiH}2}=\frac{\mathrm{wt}.\%\mathrm{of}\mathrm{Secondary}\mathrm{silicon}\mathrm{atoms}}{28.086}& \left(14\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.15\right]& \\ Y_{\mathrm{SiH}}=\frac{\mathrm{wt}.\%\mathrm{of}\mathrm{Tertiary}\mathrm{silicon}\mathrm{atoms}}{28.086}& \left(15\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.16\right]& \\ Y_{\mathrm{Si}}=\frac{\mathrm{wt}.\%\mathrm{of}\mathrm{Quaternary}\mathrm{silicon}\mathrm{atoms}}{28.086}& \left(16\right)\end{array}$

[0043] Here, the weight percentages of primary, secondary, tertiary, and quaternary silicon atoms are values obtained by multiplying area ratios of .sup.29Si-NMR of primary, secondary, tertiary, and quaternary silicon atoms by the elemental analysis value of silicon atoms. The area ratios of .sup.29Si-NMR of primary, secondary, tertiary, and quaternary silicon atoms are ratios of respective area ratios of primary, secondary, tertiary, and quaternary silicon atoms to a total value of area ratios of primary, secondary, tertiary, and quaternary silicon atoms normalized by quaternary silicon atoms. The weight percentages of primary, secondary, tertiary, and quaternary silicon atoms are thus specifically as represented by Formulas (17) to (20) described below:

[00006]$\begin{array}{cc}\left[\mathrm{Math}.17\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Primary}\mathrm{silicon}\mathrm{atoms}=\mathrm{Area}\mathrm{ratio}{\mathrm{of}}^{29}\mathrm{Si}-NMR\mathrm{of}\mathrm{primary}\mathrm{silicon}\mathrm{atoms}\mathrm{Elemental}\mathrm{analysis}\mathrm{value}\mathrm{of}\mathrm{silicon}\mathrm{atoms}(\mathrm{wt}.\%)& \left(17\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.18\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Secondary}\mathrm{silicon}\mathrm{atoms}=\mathrm{Area}\mathrm{ratio}{\mathrm{of}}^{29}\mathrm{Si}-NMR\mathrm{of}\mathrm{secondary}\mathrm{silicon}\mathrm{atoms}\mathrm{Elemental}\mathrm{analysis}\mathrm{value}\mathrm{of}\mathrm{silicon}\mathrm{atoms}(\mathrm{wt}.\%)& \left(18\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.19\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Tertiary}\mathrm{silicon}\mathrm{atoms}=\mathrm{Area}\mathrm{ratio}{\mathrm{of}}^{29}\mathrm{Si}-NMR\mathrm{of}\mathrm{tertiary}\mathrm{silicon}\mathrm{atoms}\mathrm{Elemental}\mathrm{analysis}\mathrm{value}\mathrm{of}\mathrm{silicon}\mathrm{atoms}(\mathrm{wt}.\%)& \left(19\right)\end{array}$$\begin{array}{cc}\left[\mathrm{Math}.20\right]& \\ \mathrm{wt}.\%\mathrm{of}\mathrm{Quaternary}\mathrm{silicon}\mathrm{atoms}=\mathrm{Area}\mathrm{ratio}{\mathrm{of}}^{29}\mathrm{Si}-NMR\mathrm{of}\mathrm{quaternary}\mathrm{silicon}\mathrm{atoms}\mathrm{Elemental}\mathrm{analysis}\mathrm{value}\mathrm{of}\mathrm{silicon}\mathrm{atoms}(\mathrm{wt}.\%)& \left(20\right)\end{array}$

[0044] The area ratios of primary, secondary, tertiary, and quaternary silicon atoms in the polycarbosilane in .sup.29Si-NMR can be determined by calculating integration values using a signal of 10 to 8 ppm as a signal derived from quaternary silicon (>Si<), a signal of 8 to 24 ppm as a signal derived from tertiary silicon (SiH<), a signal of 30 to 50 ppm as a signal derived from secondary silicon (SiH.sub.2), and a signal of 40 to 70 ppm as a signal derived from primary silicon (SiH.sub.3). The elemental analysis value of silicon atoms can be determined by a known method.

[0045] The bonding index can be calculated by the calculation method described above.

[0046] Furthermore, the polycarbosilane produced in the polycarbosilane synthesis step has a higher softening point compared to that of polycarbosilane obtained by using polysilane that is not cyclic. In the present description, softening point refers to a temperature at which polycarbosilane starts to melt. Accordingly, the polycarbosilane of the present embodiment can prevent fusion of fibers during pyrolyzing. Specifically, in a case where the polycarbosilane powder is heated at 390 C. for 2 minutes, the polycarbosilane of the present embodiment preferably remained in powder state although some parts of the polycarbosilane are melted, and more preferably completely remains in powder state. More specifically, the softening point in the present embodiment is preferably 400 C. or higher, more preferably 500 C. or higher at which the polycarbosilane actively increases its molecular weight and crosslinks, and even more preferably 600 C. or higher at which pyrolysis of the polycarbosilane to silicon carbide actively occurs.

[0047] With reference to FIG. 1, one embodiment of the polycarbosilane synthesis step will be described. FIG. 1 is a view illustrating a liquid phase-gas phase thermolysis apparatus 10 for use in polycarbosilane synthesis.

[0048] The liquid phase-gas phase thermolysis apparatus 10 includes a liquid phase reaction vessel 1, a liquid phase heater 2, a liquid phase thermocouple 3, a gas phase reaction tube 4, a gas phase heater 5, a gas phase thermocouple 6, a first cooling tube 7, a flowmeter 8, and a valve 9.

[0049] First, a cyclic silane compound is placed in the liquid phase reaction vessel 1 and heated at the first temperature by using the liquid phase heater 2 under an inert gas to generate a gas phase. As the inert gas, for example, nitrogen, argon, or the like can be used. The first temperature is measured using the liquid phase thermocouple 3. An amount of the inert gas is adjusted using the flowmeter 8.

[0050] Next, the generated gas phase moves to the gas phase reaction tube 4 and is heated at the second temperature using the gas phase heater 5 to produce polycarbosilane. The second temperature is measured using the gas phase thermocouple 6.

[0051] Next, the generated polycarbosilane is cooled by the first cooling pipe 7 and the liquid phase is returned to the liquid phase reaction vessel 1 and heated at the first temperature using the liquid phase heater 2 to increase the molecular weight of the polycarbosilane.

[0052] A series of these reactions are repeatedly performed, and after a predetermined reaction time elapses, the liquid phase and the gas phase are cooled and the synthesized polycarbosilane is collected from the liquid phase reaction vessel 1. In this way, polycarbosilane is obtained.

Other Steps

[0053] The production method according to the one aspect of the present invention may include a step other than the polycarbosilane synthesis step. Other steps are not particularly limited as long as the effects of the present invention are not impaired.

[0054] The production method according to the one aspect of the present invention may include, after the polycarbosilane synthesis step, a removal step of adding a solvent to the synthesized polycarbosilane and removing an insoluble component. It is possible to remove impurities contained in the polycarbosilane by the removal step. The insoluble component may be removed by filtration, for example. The solvent is not particularly limited as long as it is capable of extracting the polycarbosilane. Examples of the solvent include: aromatic hydrocarbons such as benzene, toluene, ethylbenzene, xylene, and mesitylene; aliphatic hydrocarbons such as hexane, heptane, octane, and nonane; and halogenated hydrocarbons such as chloroform and dichloromethane. An amount of the solvent to be added only needs to be an amount in which the polycarbosilane is dissolved, and can be appropriately set by those skilled in the art. The extraction temperature can be appropriately set by those skilled in the art and may be, for example, room temperature (22 C.).

[0055] Furthermore, the polycarbosilane produced by the production method according to an aspect of the present invention results in a higher yield of the polycarbosilane after the molecular weight adjustment compared to polycarbosilane produced by undergoing a molecular weight adjustment step. Note that, in the present description, yield of polycarbosilane after molecular weight adjustment refers to the yield of PCS after removal of insoluble component from the synthesized PCS following the molecular weight adjustment.

2. Method for Producing Silicon Carbide Fiber

[0056] The method for producing silicon carbide fibers (hereinafter, also referred to as SiC fibers) according to an aspect of the present invention includes: a polycarbosilane synthesis step of synthesizing polycarbosilane having a weight average molecular weight of 9000 or greater, the polycarbosilane synthesis step including the processes of: [0057] heating a raw material containing a cyclic silane compound at the first temperature to generate a gas phase, heating the gas phase at the second temperature higher than the first temperature to generate polycarbosilane, and by cooling the polycarbosilane to return to the raw material and heating at the first temperature, increasing a molecular weight of the polycarbosilane; [0058] a spinning step of forming the polycarbosilane synthesized in the polycarbosilane synthesis step into a fibrous form; and [0059] a pyrolyzing step of pyrolyzing the polycarbosilane fiber produced in the spinning step. With such a configuration, it is possible to produce SiC fibers having a high tensile strength.

[0060] Furthermore, according to the method for producing silicon carbide fibers according to an aspect of the present invention because the yield of the polycarbosilane after the molecular weight adjustment improves, the total yield after the synthesis step improves. Thus, according to the method for producing silicon carbide fibers according to an aspect of the present invention, the yield of the silicon carbide fibers from the polycarbosilane can be improved. In the present description, total yield after the synthesis step refers to the product of a PCS yield (%) after molecular weight adjustment and a ceramic yield (%). The term ceramic yield (%) refers to the yield of SiC fibers after pyrolyzing from green fibers.

Polycarbosilane Synthesis Step

[0061] The description of the polycarbosilane synthesis step is the same as the polycarbosilane synthesis step in 1. Method for Producing Polycarbosilane for Silicon Carbide Fiber Production.

Spinning Step

[0062] The spinning step is a step of forming the polycarbosilane synthesized in the polycarbosilane synthesis step into a fibrous form.

[0063] Examples of the spinning method include a melt spinning method, a dry spinning method, and a wet spinning method. The dry spinning method is preferable from the viewpoint that spinning can be performed not necessarily under a high temperature condition and a rapid temperature drop does not occur after spinning, whereby variation in fiber diameter can be reduced. In a case where the dry spinning method is performed, spinning can be performed by, for example, the following method. That is, the polycarbosilane according to the one aspect of the present invention is dissolved in a solvent to prepare a dry spinning solution. The dry spinning solution is then charged into a spinning apparatus to generate polycarbosilane fibers.

[0064] A solvent for dissolving the polycarbosilane may be any solvent capable of dissolving the polycarbosilane, and examples thereof include: aromatic hydrocarbons such as benzene, toluene, ethylbenzene, xylene, and mesitylene; aliphatic hydrocarbons such as hexane, heptane, octane, and nonane; and halogenated hydrocarbons such as chloroform and dichloromethane. Toluene or xylene is preferably used because of being excellent in solubility of polycarbosilane and volatility.

[0065] A concentration of the dry spinning solution can be appropriately adjusted by those skilled in the art, and may be, for example, 50 to 70%.

[0066] A viscosity of the dry spinning solution can be appropriately adjusted by those skilled in the art depending on a nozzle diameter of the spinning apparatus. For example, in a case of a nozzle diameter of 65 m, the viscosity may be 10 to 30 Pa.Math.s at 25 C. The viscosity can be determined by a known method for measuring the viscosity of a solution, and can be measured, for example, by using an E-type viscometer.

[0067] As the spinning apparatus used for spinning, an apparatus usually used in the present technical field only needs to be used. For example, a green fiber can be obtained by supplying the dry spinning solution to the spinning apparatus and performing spinning under conditions of a spinning nozzle diameter of 65 m, discharge pressures of 2 to 3.5 MPa, and a spinning speed of 10 to 30 mg/min. The green fiber generated under such conditions may be, for example, polycarbosilane fibers having a green fiber diameter of 17.0 to 19.0 m.

Pyrolyzing Step

[0068] The pyrolyzing step is a step of pyrolyzing the polycarbosilane fibers generated by the spinning step. It is possible to generate silicon carbide fibers by pyrolyzing the polycarbosilane fibers to convert them into ceramics.

[0069] The pyrolyzing conditions can be appropriately set by those skilled in the art. For example, the pyrolyzing may be performed under conditions described in Table 1 below. Further, the pyrolyzing may be performed under a condition in which the highest temperature in Table 1 is changed to 1400 C. From the viewpoint of obtaining SiC fibers having a high tensile strength, the maximum temperature is preferably set to 1000 C.

[0070] The tensile strength can be measured by a known method. For example, a tensile test on a monofilament is performed to measure a breaking stress, and the breaking stress is divided by a cross-sectional area of the SiC fiber, whereby the tensile strength can be obtained.

[0071] A modulus of elasticity is a value calculated by dividing the obtained tensile strength by an elongation percentage with respect to a gauge length at the time of the tensile test.

SUMMARY

[0072] The method for producing silicon carbide fibers according to a first aspect of the present invention includes: [0073] a polycarbosilane synthesis step of synthesizing polycarbosilane having a weight average molecular weight of 9000 or greater, the polycarbosilane synthesis step including performing repeatedly: [0074] a process of heating a raw material containing a cyclic silane compound at a first temperature to generate a gas phase, a process of heating the gas phase at a second temperature higher than the first temperature to generate polycarbosilane, and a process of cooling and returning the polycarbosilane to the raw material and heating the returned polycarbosilane at the first temperature to increase a molecular weight of the polycarbosilane; [0075] a spinning step of forming the polycarbosilane synthesized in the polycarbosilane synthesis step into a fibrous form; and [0076] a pyrolyzing step of pyrolyzing the polycarbosilane fiber produced in the spinning step; [0077] the method containing no molecular weight adjustment step of removing, from the polycarbosilane synthesized in the polycarbosilane synthesis step, polycarbosilane having a low molecular weight.

[0078] Furthermore, in the method for producing silicon carbide fibers according to a second aspect of the present invention, polycarbosilane having a bonding index, which is an indicator of a degree of branching, expressed by the following Formula (1) of 2.52 or greater is preferably synthesized in the above-described polycarbosilane synthesis step:

[00007]$\begin{array}{cc}\left[\mathrm{Math}.1\right]& \\ \mathrm{BONDING}\mathrm{INDEX}=\frac{\begin{array}{c}{X}_{\mathrm{CH}3}1+X_{\mathrm{CH}2}2+X_{\mathrm{CH}}3+X_C\\ 4+Y_{\mathrm{SiH}3}1+Y_{\mathrm{SiH}2}2+Y_{\mathrm{SiH}}3+Y_{\mathrm{Si}}4\end{array}}{\begin{array}{c}{X}_{\mathrm{CH}3}+X_{\mathrm{CH}2}+X_{\mathrm{CH}}+X_C+Y_{\mathrm{SiH}3}+Y_{\mathrm{SiH}2}+\\ Y_{\mathrm{SiH}}+Y_{\mathrm{Si}}\end{array}}& \left(1\right)\end{array}$ [0079] where in Formula (1), [0080] X.sub.CH3, X.sub.CH2, X.sub.CH, and X.sub.C are values obtained by dividing weight percentages of primary, secondary, tertiary, and quaternary carbon atoms, respectively, by 12, and [0081] Y.sub.SiH3, Y.sub.SiH2, Y.sub.SiH, and Y.sub.Si are values obtained by dividing weight percentages of primary, secondary, tertiary, and quaternary silicon atoms, respectively, by 28.086.

[0082] Furthermore, in the method for producing silicon carbide fibers according to a third aspect of the present invention, polycarbosilane satisfying the following condition is preferably synthesized in the polycarbosilane synthesis step in the first or second aspect: [0083] a synthesized polycarbosilane powder remains in powder stated when heated at 390 C. for 2 minutes.

[0084] Furthermore, in the method for producing silicon carbide fibers according to a fourth aspect of the present invention, the cyclic silane compound in the first or second aspect is preferably dodecamethylcyclohexasilane.

[0085] Furthermore, in the method for producing silicon carbide fibers according to a fifth aspect of the present invention, the cyclic silane compound in the third aspect is preferably dodecamethylcyclohexasilane.

EXAMPLES

[0086] Embodiments of the present invention will be further described in detail using the examples below. Needless to say, the present invention is not limited to the following examples, and details of the present invention can be in various manners. Note that reagents and apparatuses whose manufacturers are not described in the examples were those commonly used in the art.

1. Synthesis of Polycarbosilane (PCS)

Synthesis Example 1

[0087] Dodecamethylcyclohexasilane (DMCHS) was placed in a liquid phase reaction vessel of a liquid phase-gas phase thermolysis apparatus as illustrated in FIG. 1. Next, the liquid phase in the liquid phase reaction vessel was heated to 400 to 500 C., and the gas phase in the gas phase reaction tube was heated to 600 C. and reacted for 6 hours 30 minutes to synthesize PCS. As the DMCHS, one produced in accordance with a known production method was used.

Synthesis Example 2

[0088] PCS was synthesized in the same manner as in Synthesis Example 1 except that the reaction time was 6 hours.

Synthesis Example 3

[0089] PCS was synthesized in the same manner as in Synthesis Example 1 except that polydimethylsilane (PDMS) was charged in the liquid phase reaction vessel instead of DMCHS, and the reaction time was 8 hours.

Synthesis Example 4

[0090] PCS was synthesized in the same manner as in Synthesis Example 1 except that the reaction time was 5 hours.

2. Molecular Weight Adjustment and Removal of Impurities

Examples 1 and 2 and Comparative Examples 1 and 2

[0091] The PCS synthesized in each of Synthesis Examples 1 to 4 was dissolved in toluene at room temperature without performing molecular weight adjustment. The insoluble component was removed by filtration, and then the solvent was removed to obtain PCS as each of Examples 1 and 2 and Comparative Examples 1 and 2.

Comparative Examples 3 and 4

[0092] The molecular weight was adjusted by washing 4 times at 50 C. with ethyl acetate 5 times the weight of the PCS synthesized in each of Synthesis Examples 3 and 4 to separate into a dissolved component and an insoluble component. The insoluble component was then dissolved in toluene at room temperature. The insoluble component was removed by filtration, and then the solvent was removed to obtain PCS as each of Comparative Examples 3 and 4.

Reference Example 1

[0093] PCS was obtained in the same manner as in Comparative Examples 3 and 4 except that ethyl acetate 5 times the weight of the PCS synthesized in Synthesis Example 1 was used.

Reference Examples 2 to 5

[0094] Each PCS was obtained in the same manner as in Comparative Examples 3 and 4, except that the molecular weight adjustment was performed by washing 1 to 4 times at 50 C. with ethyl acetate 5 times the weight of the PCS synthesized in Synthesis Example 2.

3. Spinning

[0095] The PCS from which the insoluble component was removed was dissolved in xylene in such a manner that the viscosity of the spinning solution at 25 C. was 16 to 25 Pa.Math.s, thereby preparing a dry spinning solution. Thereafter, the prepared solution was extruded from a spinneret (nozzle) having a nozzle diameter of 65 m and wound to obtain polycarbosilane fibers (green fibers) having a fiber diameter of 17 to 19 m.

4. Pyrolyzing

[0096] The green fibers of PCS of Examples 1 and 2, Comparative Examples 1 to 4, and Reference Examples 1 to 5 were pyrolyzed at a highest temperature of 1000 C. under the conditions shown in Table 1 to obtain silicon carbide fibers.

TABLE-US-00001 TABLE 1 Temperature Holding time after Temperature raising rate Pyrolyzing reaching highest range [ C./h] atmosphere temperature [h] r.t. to 500 C. 150 N.sub.2 500 to 800 C. 100 60% H.sub.2/Ar 800 to 1000 C. 150 Ar 1

[0097] For the green fibers of PCS of Example 1 and Reference Example 1, silicon carbide fibers were also obtained by pyrolyzing under the condition where the highest temperature was changed to 1400 C.

5. Evaluation

Confirmation of Melting Behavior of PCS

[0098] Each of the PCS of Examples 1 and 2 and Comparative Examples 1 and 2 was charged in a glass tube, and the inside of the tube was purged with argon and sealed. This was placed in a melting point apparatus (B-545, available from Buchi) in which the temperature inside the apparatus was increased to 390 C. in advance, and allowed to stand for 2 minutes. After the PCS was allowed to stand, the condition of the PCS charged in the tube was visually observed. As the PCS remained as is in powder state, it can be said that the softening point was higher, and as the amount of the PCS melted was more, it can be said that the softening point was lower.

Elemental Analysis

[0099] The oxygen contents of the PCS synthesized in Synthesis Examples 1 to 4, and PCS of Examples 1 and 2, Comparative Examples 1 to 4, and Reference Examples 1 to 5 were measured using EMGA-930, available from Horiba, Ltd. The elemental analysis values of carbon atoms were measured using a carbon-sulfur analyzer CS844, available from LECO Corporation. The elemental analysis values of hydrogen atoms were measured using Series II CHNS/O ANALYZER 2400, available from Perkin Elmer. The elemental analysis value of silicon atoms was a remaining amount obtained by subtracting the elemental analysis values of carbon and hydrogen and the oxygen content from the total ratio (100%).

Measurement of Molecular Weight

[0100] The molecular weights of the PCS synthesized in Synthesis Examples 1 to 4 and the PCS of Examples 1 and 2, Comparative Examples 1 to 4, and Reference Examples 1 to 5 were determined by GPC measurement under the following conditions. [0101] Apparatus name: HPLC, available from Shimadzu Corporation [0102] Columns: one KF-604, one KF-602, and one KF-601 are connected in this order from the pump side for use (all available from Showa Denko K.K.) [0103] Measurement solvent: Toluene [0104] Flow rate: analytical unit and reference: 0.40 mL/min [0105] Oven: 40 C. [0106] Detector: differential refractometer (RID-20A available from Shimadzu Corporation) [0107] Sample solution: 0.5 wt. %

.SUP.1.H-NMR Analysis

[0108] The PCS synthesized in Synthesis Examples 1 to 4 and the PCS of Examples 1 and 2, Comparative Examples 1 to 4, and Reference Examples 1 to 5 were dissolved in deuterated chloroform, and subjected to .sup.1H-NMR analysis under the following conditions. Integration values were calculated using a signal of 5.5 to 3.5 ppm as a signal derived from hydrogen on tertiary silicon (SiH<), a signal of 1.0 to 0 ppm as a signal derived from hydrogen on primary carbon (CH.sub.3), a signal of 0 to 0.4 ppm as a signal derived from hydrogen on secondary carbon (CH.sub.2), and a signal of 0.4 to 1.0 ppm as a signal derived from hydrogen on tertiary carbon (CH<). Note that no signal derived from hydrogen on primary and secondary silicon could be confirmed.

[0109] Measuring instrument: JNM-ECZ600R/S1 (available from JEOL Ltd.)

[0110] Number of scans: 8

.SUP.29.Si-NMR Analysis

[0111] The PCS synthesized in Synthesis Examples 1 to 4 and the PCS of Examples 1 and 2, Comparative Examples 1 to 4, and Reference Examples 1 to 5 were dissolved in deuterated chloroform, and subjected to .sup.29Si-NMR analysis under the following conditions. Integration values were calculated using a signal of 10 to 8 ppm as a signal derived from quaternary silicon (>Si<), and a signal of 8 to 24 ppm as a signal derived from tertiary silicon (SiH<). Note that no signal derived from primary and secondary silicon could be confirmed.

[0112] Measuring instrument: JNM-ECZ600R/S1 (available from JEOL Ltd.)

[0113] Measurement method details: no rotation; 45.sup.0 pulse irradiation; acquisition time 0.659 seconds; measurement with a pulse sequence at a delay interval of 16 seconds

[0114] Number of scans: 512

Measurement of Spinning Solution Viscosity

[0115] The viscosity of the dry spinning solution was measured using an E-type viscosimeter (ARES-G2 available from TA Instruments) under conditions of a temperature of 25 C. and a shear rate of 200 sec.sup.1.

Calculation of Bonding Index

[0116] Calculation was performed according to Formulas (1) to (20) described in the above-described embodiment. However, neither primary nor secondary silicon was confirmed.

Yield

[0117] The yield in the polycarbosilane synthesis step was calculated as a weight yield in percentage obtained by dividing the weight of PCS obtained from the liquid phase reaction vessel by the weight of the raw materials charged into the reaction vessel.

[0118] The PCS yield after molecular weight adjustment was calculated as a weight yield in percentage obtained by dividing the dry weight of PCS obtained after the insoluble component removal subsequent to molecular weight adjustment by the weight of PCS before molecular weight adjustment.

[0119] The ceramic yield in the pyrolyzing step was calculated as a weight yield in percentage obtained by dividing the weight of the SiC fibers after pyrolyzing by the green fiber weight charged in the pyrolyzing apparatus.

[0120] The total yield after the synthesis step was calculated as the product of the PCS yield after molecular weight adjustment and the ceramic yield. However, in a case where molecular weight adjustment was not performed, the PCS yield after molecular weight adjustment was taken as 100% for use in calculation.

Fiber Diameter

[0121] The diameters of the SiC fibers were measured at a magnification of 2000 times using an optical microscope VHX-5000 available from KEYENCE CORPORATION.

Tensile Strength

[0122] STA-1150 available from ORIENTEC CO., LTD. was used to perform a tensile test of a monofilament at a gauge length of 25 mm and a cross head speed of 5 mm/min, thereby measuring a breaking stress. The tensile strength was obtained by dividing the measured breaking stress by the cross-sectional area of the SiC fiber. The tensile strength in the present application was an average value obtained by performing the tensile test 10 times.

Modulus of Elasticity

[0123] The modulus of elasticity was calculated by dividing the obtained tensile strength by an elongation percentage with respect to a gauge length at the time of the tensile test.

6. Results

[0124] The evaluation results are shown in Tables 2 to 5. Specifically, the evaluation results of the PCS after synthesis are shown in Table 2, the evaluation results of the PCS after molecular weight adjustment and the insoluble component removal step are shown in Table 3, the evaluation results of the PCS fibers after spinning are shown in Table 4, and the evaluation results of the SiC fibers after pyrolyzing are shown in Table 5. In addition, the confirmed results of melting behavior of the PCS and the tensile strength of the SiC fibers obtained by the pyrolyzing at 1000 C. are shown in FIG. 2. Note that, in Tables 2 to 5 and FIG. 2, a bar () was entered for an item in which no data was measured, and unmeasurable was entered for an item in which no data could be measured. Furthermore, the description for PCS yield after molecular weight adjustment (%), ceramic yield (%), and total yield after synthesis step (%) are the same as those in 1. Method for Producing Polycarbosilane for Silicon Carbide Fiber Production and 2. Method for Producing Silicon Carbide Fiber.

TABLE-US-00002 TABLE 2 Polycarbosilane synthesis step First Second Raw temperature temperature Reaction Bonding Yield material [ C.] [ C.] time Index Mw Mn Mw/Mn [%] Synthesis DMCHS 400 to 500 600 6 hours 30 2.62 11474 1854 6.19 60.7 Example 1 minutes Synthesis DMCHS 600 6 hours 2.52 10630 1726 6.16 60.0 Example 2 Synthesis PDMS 600 8 hours 2.60 10167 1850 5.50 57.2 Example 3 Synthesis DMCHS 600 5 hours 2.51 4813 1209 3.98 61.1 Example 4

TABLE-US-00003 TABLE 3 Molecular weight adjustment step Number of PCS yield after molecular molecular Synthesis weight weight Bonding Example adjustment adjustment [%] Mw Mn Mw/Mn Index Example 1 Synthesis 0 10581 1672 6.33 2.62 Example 1 Example 2 Synthesis 0 10957 1698 6.45 2.52 Example 2 Comparative Synthesis 0 9197 1808 5.09 2.60 Example 1 Example 3 Comparative Synthesis 0 4766 1241 3.84 2.51 Example 2 Example 4 Comparative Synthesis 4 62.1 14225 5988 2.38 2.56 Example 3 Example 3 Comparative Synthesis 4 41.8 8368 5123 1.63 2.57 Example 4 Example 4 Reference Synthesis 4 69.8 14100 4927 2.86 2.63 Example 1 Example 1 Reference Synthesis 1 80.8 11467 2811 4.08 2.58 Example 2 Example 2 Reference Synthesis 2 72.9 12858 3974 3.24 2.59 Example 3 Example 2 Reference Synthesis 3 67.8 12882 4462 2.89 2.62 Example 4 Example 2 Reference Synthesis 4 64.2 13487 5314 2.54 2.61 Example 5 Example 2

TABLE-US-00004 TABLE 4 Spinning step Solution Green concen- Discharge Spinning fiber tration Viscosity pressure speed diameter [wt %] [Pa .Math. S] [MPa] [mg/min] [m] Example 1 61.9 17.2 2.4 21.9 18.5 Example 2 64.1 18.5 2.9 17.0 17.9 Comparative 63.8 16.6 2.4 19.9 17.8 Example 1 Comparative 69.8 19.6 3.3 20.6 18.1 Example 2 Comparative 54.4 17.6 2.7 19.2 17.7 Example 3 Comparative 56.3 20.2 3.3 19.8 17.8 Example 4 Reference 55.2 20.0 2.5 21.0 17.8 Example 1 Reference 59.5 18.8 2.5 18.5 17.9 Example 2 Reference 60.7 23.7 3.1 18.8 18.2 Example 3 Reference 56.2 23.2 3.0 19.1 18.1 Example 4 Reference 54.5 24.3 2.0 16.3 18.1 Example 5

TABLE-US-00005 TABLE 5 Pyrolyzing step Pyrolyzing temperature: 1000 C. Total yield Pyrolyzing temperature: 1400 C. Pyrolyzed Modulus after Pyrolyzed Modulus fiber Tensile of Ceramic synthesis fiber Tensile of Ceramic diameter strength elasticity yield step diameter strength elasticity yield [m] [GPa] [GPa] [%] [%] [m] [GPa] [GPa] [%] Example 1 10.53 2.47 253 58.0 58.0 10.40 1.57 318 60.7 Example 2 9.55 2.18 245 58.0 58.0 Comparative Unmeasurable Unmeasurable Unmeasurable Example 1 Comparative Unmeasurable Unmeasurable Unmeasurable Example 2 Comparative 10.06 1.93 247 70.8 44.0 Example 3 Comparative 10.50 1.76 251 68.5 28.6 Example 4 Reference 10.79 2.88 237 69.1 48.3 10.47 2.80 346 73.9 Example 1 Reference 8.46 2.34 234 68.1 55.0 Example 2 Reference 10.90 2.18 249 69.5 50.6 Example 3 Reference 10.51 2.27 243 70.8 48.0 Example 4 Reference 9.87 2.26 263 69.3 44.5 Example 5

[0125] Furthermore, FIG. 3 is a chart showing the relationship between the number of molecular weight adjustment of the polycarbosilane synthesized in Synthesis Example 1 and Synthesis Example 2 and total yield (%) after synthesis step. In FIG. 3, the horizontal axis shows the number of molecular weight adjustment, and the vertical axis shows the total yield (%) after the synthesis step.

[0126] From Tables 2 to 5 and FIG. 3, it was found that the polycarbosilane produced by the method for producing polycarbosilane according to an aspect of the present invention can produce silicon carbide fibers without performance of the molecular weight adjustment step. From FIG. 2, it was found that the polycarbosilane produced by the method for producing polycarbosilane according to an aspect of the present invention has a high softening point. Thus, it was shown that, for the polycarbosilane produced by the method for producing polycarbosilane according to an aspect of the present invention, fibers are less likely to fuse during pyrolyzing in a process of producing silicon carbide fibers. From those described above, it was shown that, according to the method for producing polycarbosilane of an aspect of the present invention, the polycarbosilane for silicon carbide fiber production can be produced by fewer processes than known production methods, in a method for producing polycarbosilane by a liquid phase-gas phase thermolysis condensation method.

[0127] Furthermore, from Table 3, Table 5, and FIG. 3, it was found that the polycarbosilane produced by the method for producing polycarbosilane according to an aspect of the present invention has a more increased yield of the polycarbosilane after the molecular weight adjustment compared to that of polycarbosilane produced by undergoing a molecular weight adjustment step. Thus, it was found that the total yield after synthesis step increases. From those described above, it was found that, according to the method for producing silicon carbide according to an aspect of the present invention, the yield of the silicon carbide fibers from the polycarbosilane can be improved.

INDUSTRIAL APPLICABILITY

[0128] The present invention can be used in production of silicon carbide fibers.

REFERENCE SIGNS LIST

[0129] 1 Liquid phase reaction vessel [0130] 2 Liquid phase heater [0131] 3 Liquid phase thermocouple [0132] 4 Gas phase reaction tube [0133] 5 Gas phase heater [0134] 6 Gas phase thermocouple [0135] 7 First cooling tube [0136] 8 Flowmeter [0137] 9 Valve [0138] 10 Liquid phase-gas phase thermolysis apparatus