Molybdenum diselenide (MoSe2)/InGaN multispectral photoelectric detector and preparation method and use thereof

Abstract

A molybdenum diselenide (MoSe.sub.2)/InGaN multispectral photoelectric detector includes a substrate, a buffer layer, an InGaN layer and a MoSe.sub.2 layer that are arranged sequentially from bottom to top. The MoSe.sub.2 layer partially covers the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the InGaN layer not covered by the MoSe.sub.2 layer and on a part of the MoSe.sub.2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe.sub.2 layer. A preparation method of the detector is further provided. The detector detects red light and blue light at the same time. While realizing a sensitivity enhanced micro-nano structure on a surface of a detector chip, the detector improves quantum efficiency in blue and red bands, and enhances resonant absorption for the blue light and red light.

Claims

1. A molybdenum diselenide (MoSe.sub.2)/InGaN multispectral photoelectric detector, comprising a substrate, a buffer layer, an InGaN layer and a MoSe.sub.2 layer, wherein the substrate, the buffer layer, the InGaN layer and the MoSe.sub.2 layer are arranged sequentially from bottom to top, wherein the MoSe.sub.2 layer partially covers the InGaN layer; and the photoelectric detector further comprises a barrier layer and an electrode layer; the barrier layer is provided on the InGaN layer not covered by the MoSe.sub.2 layer and on a part of the MoSe.sub.2 layer; and the electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe.sub.2 layer.

2. The MoSe.sub.2/InGaN multispectral photoelectric detector according to claim 1, wherein the buffer layer comprises an AlN layer, an AlGaN layer and a GaN layer, wherein the AlN layer, the AlGaN layer and the GaN layer are arranged sequentially from bottom to top; the AlN layer is provided on the substrate; and the InGaN layer is provided on the GaN layer; and the InGaN layer has a thickness of 100 nm to 200 nm, and the MoSe.sub.2 layer has a thickness of 1 nm to 2 nm.

3. The MoSe.sub.2/InGaN multispectral photoelectric detector according to claim 2, wherein the AlN layer, the AlGaN layer and the GaN layer respectively have a thickness of 350 nm to 450 nm, a thickness of 650 nm to 700 nm, and a thickness of 4 m to 5 m.

4. The MoSe.sub.2/InGaN multispectral photoelectric detector according to claim 1, wherein the substrate is a Si substrate; and the barrier layer is an Al.sub.2O.sub.3 barrier layer.

5. The MoSe.sub.2/InGaN multispectral photoelectric detector according to claim 1, wherein that the MoSe.sub.2 layer partially covers the InGaN layer indicates the MoSe.sub.2 layer forms stepwise horizontal stages on the InGaN layer; and two ends of the MoSe.sub.2 layer respectively form the stepwise horizontal stages on the InGaN layer; and the electrode layer is shaped as an interdigital electrode; the electrode layer is a metal electrode layer, wherein the electrode layer is a Ti/Au metal layer; the Ti/Au metal layer comprises a Ti metal layer and an Au metal layer, wherein the Ti metal layer and the Au metal layer are arranged from bottom to top; and the Ti layer is adjacent to the barrier layer.

6. The MoSe.sub.2/InGaN multispectral photoelectric detector according to claim 5, wherein the Ti metal layer has a thickness of 20 nm to 30 nm, and the Au metal layer has a thickness of 100 nm to 110 nm.

7. A preparation method of the MoSe.sub.2/InGaN multispectral photoelectric detector according to claim 1, comprising the following steps: (1) growing the buffer layer on the substrate by metal organic chemical vapor deposition (MOCVD), and sequentially growing the InGaN layer and the MoSe.sub.2 layer on the buffer layer by MOCVD; (2) etching the MoSe.sub.2 layer, such that the MoSe.sub.2 layer forms stepwise horizontal stages on the InGaN layer; performing photoetching on the stepwise horizontal stages on the InGaN layer and the MoSe.sub.2 layer to obtain regions for evaporating the barrier layer; and preparing the barrier layer by evaporation; and (3) performing photoetching on each of the barrier layer and the MoSe.sub.2 layer not covered by the barrier layer to obtain a region for evaporating a metal electrode; and evaporating the metal electrode on the barrier layer.

8. The preparation method according to 7, wherein the buffer layer is prepared by sequentially and epitaxially growing an AlN layer, an AlGaN layer and a GaN layer on the substrate by MOCVD from bottom to top; and the AlN layer, the AlGaN layer and the GaN layer are respectively grown at a temperature of 1,100 C. to 1,200 C., a temperature of 1,100 C. to 1,200 C. and a temperature of 1,000 C. to 1,150 C.; and the InGaN layer and the MoSe.sub.2 layer are grown on the buffer layer by MOCVD at a temperature of 600 C. to 750 C.

9. The preparation method according to 7, wherein the barrier layer and a metal electrode layer each have an evaporation rate of 0.23 nm/min to 0.28 nm/min.

10. The preparation method according to claim 7, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, the buffer layer comprises an AlN layer, an AlGaN layer and a GaN layer, wherein the AlN layer, the AlGaN layer and the GaN layer are arranged sequentially from bottom to top; the AlN layer is provided on the substrate; and the InGaN layer is provided on the GaN layer; and the InGaN layer has a thickness of 100 nm to 200 nm, and the MoSe.sub.2 layer has a thickness of 1 nm to 2 nm.

11. The preparation method according to claim 10, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, the AlN layer, the AlGaN layer and the GaN layer respectively have a thickness of 350 nm to 450 nm, a thickness of 650 nm to 700 nm, and a thickness of 4 m to 5 m.

12. The preparation method according to claim 7, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, the substrate is a Si substrate; and the barrier layer is an Al.sub.2O.sub.3 barrier layer.

13. The preparation method according to claim 7, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, that the MoSe.sub.2 layer partially covers the InGaN layer indicates the MoSe.sub.2 layer forms the stepwise horizontal stages on the InGaN layer; and two ends of the MoSe.sub.2 layer respectively form the stepwise horizontal stages on the InGaN layer; and the electrode layer is shaped as an interdigital electrode; the electrode layer is a metal electrode layer, wherein the electrode layer is a Ti/Au metal layer; the Ti/Au metal layer comprises a Ti metal layer and an Au metal layer, wherein the Ti metal layer and the Au metal layer are arranged from bottom to top; and the Ti layer is adjacent to the barrier layer.

14. The preparation method according to claim 13, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, the Ti metal layer has a thickness of 20 nm to 30 nm, and the Au metal layer has a thickness of 100 nm to 110 nm.

15. A method of using the MoSe.sub.2/InGaN multispectral photoelectric detector according to claim 1, comprising: using the MoSe.sub.2/InGaN multispectral photoelectric detector in blue and/or red multispectral photoelectric detection.

16. The method according to claim 15, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, the buffer layer comprises an AlN layer, an AlGaN layer and a GaN layer, wherein the AlN layer, the AlGaN layer and the GaN layer are arranged sequentially from bottom to top; the AlN layer is provided on the substrate; and the InGaN layer is provided on the GaN layer; and the InGaN layer has a thickness of 100 nm to 200 nm, and the MoSe.sub.2 layer has a thickness of 1 nm to 2 nm.

17. The method according to claim 16, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, the AlN layer, the AlGaN layer and the GaN layer respectively have a thickness of 350 nm to 450 nm, a thickness of 650 nm to 700 nm, and a thickness of 4 m to 5 m.

18. The method according to claim 15, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, the substrate is a Si substrate; and the barrier layer is an Al.sub.2O.sub.3 barrier layer.

19. The method according to claim 15, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, that the MoSe.sub.2 layer partially covers the InGaN layer indicates the MoSe.sub.2 layer forms the stepwise horizontal stages on the InGaN layer; and two ends of the MoSe.sub.2 layer respectively form the stepwise horizontal stages on the InGaN layer; and the electrode layer is shaped as an interdigital electrode; the electrode layer is a metal electrode layer, wherein the electrode layer is a Ti/Au metal layer; the Ti/Au metal layer comprises a Ti metal layer and an Au metal layer, wherein the Ti metal layer and the Au metal layer are arranged from bottom to top; and the Ti layer is adjacent to the barrier layer.

20. The method according to claim 19, wherein in the MoSe.sub.2/InGaN multispectral photoelectric detector, the Ti metal layer has a thickness of 20 nm to 30 nm, and the Au metal layer has a thickness of 100 nm to 110 nm.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic cross-sectional view of a MoSe.sub.2/InGaN multispectral photoelectric detector according to the present disclosure, where, 1substrate, 2buffer layer, 3InGaN layer, 4MoSe.sub.2 layer, 5Al.sub.2O.sub.3 barrier layer, and 6metal electrode layer;

(2) FIG. 2 is a schematic top view of an electrode structure of a MoSe.sub.2/InGaN multispectral photoelectric detector according to the present disclosure; and

(3) FIG. 3 is an I-V curve graph of a MoSe.sub.2/InGaN multispectral photoelectric detector prepared in Embodiment 1.

DETAILED DESCRIPTION OF THE EMBODIMENTS

(4) The present disclosure is further described below with reference to the embodiments, but the implementations of the present disclosure are not limited thereto.

(5) With a schematic cross-sectional view as shown in FIG. 1, a MoSe.sub.2/InGaN multispectral photoelectric detector provided by the present disclosure includes substrate 1, buffer layer 2, InGaN layer 3, and MoSe.sub.2 layer 4 that are arranged sequentially from bottom to top. The MoSe.sub.2 layer forms stepwise horizontal stages on the InGaN layer.

(6) The photoelectric detector further includes barrier layer 5 and electrode layer 6. The barrier layer 5 is provided on the stepwise horizontal stages on the InGaN layer and a part of the MoSe.sub.2 layer. The electrode layer 6 is provided on the barrier layer 5 and covers a part of an exposed portion of the MoSe.sub.2 layer 4.

(7) The InGaN layer and the MoSe.sub.2 layer form a MoSe.sub.2/InGaN functional layer.

(8) The barrier layer 5 is an Al.sub.2O.sub.3 barrier layer.

(9) The buffer layer 2 includes an AlN layer, an AlGaN layer and a GaN layer that are arranged sequentially from bottom to top. The AlN layer is provided on the substrate 1. The InGaN layer 3 is provided on the GaN layer.

(10) The InGaN layer has a thickness of 100 nm to 200 nm, and the MoSe.sub.2 layer has a thickness of 1 nm to 2 nm.

(11) The substrate is a Si substrate.

(12) The AlN layer, the AlGaN layer and the GaN layer respectively have a thickness of 350 nm to 450 nm, a thickness of 650 nm to 700 nm, and a thickness of 4 m to 5 m.

(13) Two ends of the MoSe.sub.2 layer 4 respectively form the stepwise horizontal stages on the InGaN layer 3 (namely the MoSe.sub.2 layer 4 is provided at a middle of the InGaN layer 3).

Embodiment 1

(14) The embodiment provides a MoSe.sub.2/InGaN multispectral photoelectric detector, including a substrate, a buffer layer, an InGaN layer and a MoSe.sub.2 layer that are arranged sequentially from bottom to top. The MoSe.sub.2 layer forms stepwise horizontal stages on the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the stepwise horizontal stages on the InGaN layer and a part of the MoSe.sub.2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe.sub.2 layer. Two ends of the MoSe.sub.2 layer respectively form the stepwise horizontal stages on the InGaN layer (namely the MoSe.sub.2 layer is provided at a middle of the InGaN layer). The barrier layer is provided on the two stepwise horizontal stages and neighboring parts of the MoSe.sub.2 layer. The electrode layer is provided on the two barrier layers and a part of the MoSe.sub.2 layer.

(15) The substrate is a Si substrate. The InGaN layer has a thickness of 150 nm. The MoSe.sub.2 layer has a thickness of 1.5 nm. An AlN layer, an AlGaN layer and a GaN layer respectively have a thickness of 350 nm, a thickness of 675 nm, and a thickness of 4.5 m.

(16) As shown in FIG. 2, the electrode is shaped as an interdigital electrode. The electrode layer is a metal electrode layer, and is specifically a Ti/Au metal layer. The Ti/Au metal layer includes a Ti metal layer and an Au metal layer that are arranged from bottom to top. The Ti layer is adjacent to the barrier layer. The Ti metal layer has a thickness of 25 nm. The Au metal layer has a thickness of 105 nm.

(17) A preparation method of the MoSe.sub.2/InGaN multispectral photoelectric detector includes the following steps:

(18) (1) The buffer layer is grown on the substrate by MOCVD, and the InGaN layer and the MoSe.sub.2 layer are sequentially grown on the buffer layer by MOCVD.

(19) (2) The MoSe.sub.2 layer is etched, such that the MoSe.sub.2 layer forms the stepwise horizontal stages on the InGaN layer. Photoetching (including surface spin-coating, drying, exposure, development and oxygen plasma treatment) is performed on the stepwise horizontal stages on the InGaN layer and the MoSe.sub.2 layer to obtain regions for evaporating the barrier layer. The Al.sub.2O.sub.3 barrier layer is prepared by evaporation.

(20) (3) Photoetching is performed on each of the Al.sub.2O.sub.3 barrier layer (surface spin-coating, drying, exposure, development and oxygen plasma treatment are performed on the Al.sub.2O.sub.3 barrier layer) to obtain a region for evaporating a metal electrode. The metal electrode evaporated on the Al.sub.2O.sub.3 barrier layer.

(21) The buffer layer is prepared by sequentially and epitaxially growing the AlN layer, the AlGaN layer and the GaN layer on the substrate by the MOCVD from bottom to top at a temperature of 1150 C., a temperature of 1150 C. and a temperature of 1100 C. N.sub.2 gas has a flow of 35 sccm.

(22) The MoSe.sub.2/InGaN layer is grown on the buffer layer by MOCVD at a temperature of 700 C.

(23) Steps (2) and (3) are implemented under drying time of 45 s, exposure time of 8 s, development time of 45 s, and oxygen plasma treatment time of 2.5 min.

(24) The Al.sub.2O.sub.3 barrier layer and the metal electrode layer each have an evaporation rate of 0.25 nm/min.

(25) FIG. 3 is an I-V curve graph of a MoSe.sub.2/InGaN multispectral photoelectric detector prepared in the embodiment. As can be seen, the electrode is in Schottky contact. Under a bias voltage of 5 V, and irradiation of 650-nm red light, the photocurrent is 21 A. Under irradiation of 450-nm blue light, the photocurrent is 50 A. The detector has high-speed response in the blue band and the red band.

Embodiment 2

(26) The embodiment provides a MoSe.sub.2/InGaN multispectral photoelectric detector, including a substrate, a buffer layer, an InGaN layer and a MoSe.sub.2 layer that are arranged sequentially from bottom to top. The MoSe.sub.2 layer forms stepwise horizontal stages on the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the stepwise horizontal stages on the InGaN layer and a part of the MoSe.sub.2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe.sub.2 layer.

(27) The substrate is a Si substrate. The InGaN layer has a thickness of 100 nm. The MoSe.sub.2 layer has a thickness of 1.0 nm. An AlN layer, an AlGaN layer and a GaN layer respectively have a thickness of 350 nm, a thickness of 650 nm, and a thickness of 4.0 m.

(28) As shown in FIG. 2, the electrode is shaped as an interdigital electrode. The electrode layer is a metal electrode layer, and is specifically a Ti/Au metal layer. The Ti/Au metal layer includes a Ti metal layer and an Au metal layer that are arranged from bottom to top. The Ti layer is adjacent to the barrier layer. The Ti metal layer has a thickness of 20 nm. The Au metal layer has a thickness of 100 nm.

(29) A preparation method of the MoSe.sub.2/InGaN multispectral photoelectric detector includes the following steps:

(30) (1) The buffer layer is grown on the substrate by MOCVD, and the InGaN layer and the MoSe.sub.2 layer are sequentially grown on the buffer layer by MOCVD.

(31) (2) The MoSe.sub.2 layer is etched, such that the MoSe.sub.2 layer forms the stepwise horizontal stages on the InGaN layer. Photoetching (including surface spin-coating, drying, exposure, development and oxygen plasma treatment) is performed on the stepwise horizontal stages on the InGaN layer and the MoSe.sub.2 layer to obtain regions for evaporating the barrier layer. The Al.sub.2O.sub.3 barrier layer is prepared by evaporation.

(32) (3) Photoetching is performed on each of the Al.sub.2O.sub.3 barrier layer (surface spin-coating, drying, exposure, development and oxygen plasma treatment are performed on the Al.sub.2O.sub.3 barrier layer) to obtain a region for evaporating a metal electrode. The metal electrode is evaporated on the Al.sub.2O.sub.3 barrier layer.

(33) The buffer layer is prepared by sequentially and epitaxially growing the AlN layer, the AlGaN layer and the GaN layer on the substrate by MOCVD from bottom to top at a temperature of 1,100 C., a temperature of 1,100 C. and a temperature of 1,050 C. N.sub.2 gas has a flow of 30 sccm.

(34) The InGaN layer and the MoSe.sub.2 layer are grown on the buffer layer by MOCVD at a temperature of 650 C.

(35) Steps (2) and (3) are implemented under drying time of 40 s, exposure time of 5 s, development time of 40 s, and oxygen plasma treatment time of 2.0 min.

(36) The Al.sub.2O.sub.3 barrier layer and the metal electrode layer each have an evaporation rate of 0.23 nm/min.

(37) The MoSe.sub.2/InGaN multispectral photoelectric detector prepared in the embodiment is tested.

(38) The MoSe.sub.2/InGaN multispectral photoelectric detector prepared in the embodiment has similar related performance with Embodiment 1. For related performance parameters, refer to corresponding drawings in Embodiment 1.

Embodiment 3

(39) The embodiment provides a MoSe.sub.2/InGaN multispectral photoelectric detector, including a substrate, a buffer layer, an InGaN layer and a MoSe.sub.2 layer that are arranged sequentially from bottom to top. The MoSe.sub.2 layer forms stepwise horizontal stages on the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the stepwise horizontal stages on the InGaN layer and a part of the MoSe.sub.2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe.sub.2 layer.

(40) The substrate is a Si substrate. The InGaN layer has a thickness of 200 nm. The MoSe.sub.2 layer has a thickness of 2.0 nm. An AlN layer, an AlGaN layer and a GaN layer respectively have a thickness of 450 nm, a thickness of 750 nm, and a thickness of 5.0 m.

(41) As shown in FIG. 2, the electrode is shaped as an interdigital electrode. The electrode layer is a metal electrode layer, and is specifically a Ti/Au metal layer. The Ti/Au metal layer includes a Ti metal layer and an Au metal layer that are arranged from bottom to top. The Ti layer is adjacent to the barrier layer. The Ti metal layer has a thickness of 20 nm. The Au metal layer has a thickness of 100 nm.

(42) A preparation method of the MoSe.sub.2/InGaN multispectral photoelectric detector includes the following steps:

(43) (1) The buffer layer is grown on the substrate by MOCVD, and the InGaN layer and the MoSe.sub.2 layer are sequentially grown on the buffer layer by MOCVD.

(44) (2) The MoSe.sub.2 layer is etched, such that the MoSe.sub.2 layer forms the stepwise horizontal stages on the InGaN layer. Photoetching (including surface spin-coating, drying, exposure, development and oxygen plasma treatment) is performed on the stepwise horizontal stages on the InGaN layer and the MoSe.sub.2 layer to obtain regions for evaporating the barrier layer. The Al.sub.2O.sub.3 barrier layer is prepared by evaporation.

(45) (3) Photoetching is performed on each of the Al.sub.2O.sub.3 barrier layer (surface spin-coating, drying, exposure, development and oxygen plasma treatment are performed on the Al.sub.2O.sub.3 barrier layer) to obtain a region for evaporating a metal electrode. The metal electrode is evaporated on the Al.sub.2O.sub.3 barrier layer.

(46) The buffer layer is prepared by sequentially and epitaxially growing the AlN layer, the AlGaN layer and the GaN layer on the substrate by MOCVD from bottom to top. The AlN layer, the AlGaN layer and the GaN layer are respectively grown at a temperature of 1,200 C., a temperature of 1,200 C. and a temperature of 1,150 C. N.sub.2 gas has a flow of 40 sccm.

(47) The InGaN layer and the MoSe.sub.2 layer are grown on the buffer layer by MOCVD at a temperature of 750 C.

(48) Steps (2) and (3) are implemented under drying time of 50 s, exposure time of 10 s, development time of 50 s, and oxygen plasma treatment time of 3.0 min.

(49) The Al.sub.2O.sub.3 barrier layer and the metal electrode layer each have an evaporation rate of 0.28 nm/min.

(50) The MoSe.sub.2/InGaN multispectral photoelectric detector prepared in the embodiment is tested.

(51) The MoSe.sub.2/InGaN multispectral photoelectric detector prepared in the embodiment has similar related performance with Embodiment 1. For related performance parameters, refer to corresponding drawings in Embodiment 1.

(52) The above embodiments are preferred implementations of the present disclosure, but the implementations of the present disclosure are not limited to these embodiments, and any other changes, modifications, substitutions, combinations and simplifications made without departing from the spirit and principle of the present disclosure shall be equivalent replacement means, and shall be included in the protection scope of the present disclosure.