TANDEM SOLAR CELL UPPER CELL AND MANUFACTURING METHOD THEREOF

Abstract

An exemplary embodiment of the present disclosure provides an upper cell of a tandem solar cell, including: a lower transparent electrode disposed on a transparent substrate; an epitaxial Cu.sub.2O light-absorbing layer disposed on the lower transparent electrode; an N-type oxide layer disposed on the epitaxial Cu.sub.2O light-absorbing layer; an upper transparent electrode disposed on the N-type oxide layer; and a metal grid electrode disposed on the transparent electrode, wherein the epitaxial Cu.sub.2O light-absorbing layer has a single crystalline structure.

Claims

1. An upper cell of a tandem solar cell, comprising: a lower transparent electrode disposed on a transparent substrate; an epitaxial Cu.sub.2O light-absorbing layer disposed on the lower transparent electrode; an N-type oxide layer disposed on the epitaxial Cu.sub.2O light-absorbing layer; an upper transparent electrode disposed on the N-type oxide layer; and a metal grid electrode disposed on the transparent electrode, wherein the epitaxial Cu.sub.2O light-absorbing layer has a single crystalline structure.

2. The upper cell of a tandem solar cell according to claim 1, wherein the N-type oxide layer comprises: an electron transport layer; and a conductive oxide layer disposed on the electron transport layer.

3. The upper cell of a tandem solar cell according to claim 1, wherein the lower transparent electrode comprises at least one selected from the group consisting of indium tin oxide (ITO), antimony tin oxide (ATO) and antimony zinc oxide (AZO).

4. The upper cell of a tandem solar cell according to claim 1, wherein the upper transparent electrode comprises at least one selected from the group consisting of antimony zinc oxide (AZO) and indium tin oxide (ITO).

5. The upper cell of a tandem solar cell according to claim 2, wherein the electron transport layer comprises at least one selected from the group consisting of Ga.sub.2O.sub.3 and TiO.sub.2.

6. The upper cell of a tandem solar cell according to claim 2, wherein the conductive oxide layer comprises at least one selected from the group consisting of zinc tin oxide (ZTO) and Zn.sub.1-xGe.sub.xO.

7. The upper cell of a tandem solar cell according to claim 1, wherein the epitaxial Cu.sub.2O light-absorbing layer has a thickness of 1-10 m.

8. A method for manufacturing an upper cell of a tandem solar cell, comprising the steps of: stacking a single crystalline epitaxial Cu.sub.2O light-absorbing layer on a single crystalline silicon substrate; stacking a lower transparent electrode on the single crystalline epitaxial Cu.sub.2O light-absorbing layer and then bonding a transparent substrate onto the lower transparent electrode; removing the single crystalline silicon substrate through etching; stacking an N-type oxide layer, comprising an electron transport layer and a conductive oxide layer disposed on the electron transport layer, on the single crystalline epitaxial Cu.sub.2O light-absorbing layer of the surface from which the single crystalline silicon substrate is removed; and stacking an upper transparent electrode and a metal grid electrode successively on the N-type oxide layer.

9. The method for manufacturing an upper cell of a tandem solar cell according to claim 8, wherein the step of stacking a single crystalline epitaxial Cu.sub.2O light-absorbing layer comprises applying the single crystalline silicon substrate onto an aqueous solution containing Cu(II) and lactate ions and carrying out drying to form the single crystalline epitaxial Cu.sub.2O light-absorbing layer.

10. The method for manufacturing an upper cell of a tandem solar cell according to claim 9, wherein the aqueous solution has a Cu(II) ion concentration of 0.1-1 M.

11. The method for manufacturing an upper cell of a tandem solar cell according to claim 9, wherein the aqueous solution has a lactate ion concentration of 1-5 M.

12. The method for manufacturing an upper cell of a tandem solar cell according to claim 9, wherein the aqueous solution has a ratio of lactate ions based on Cu(II) ions of 1:1 to 1:50.

13. The method for manufacturing an upper cell of a tandem solar cell according to claim 8, wherein the epitaxial Cu.sub.2O light-absorbing layer has a thickness of 1-10 m.

14. A tandem solar cell comprising: the upper cell of a tandem solar cell as defined in claim 1; and a lower cell of a tandem solar cell, disposed below the upper cell.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0030] FIG. 1 is a flow chart illustrating the steps of the method for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0031] FIG. 2 is a schematic view illustrating a device in which a single crystalline epitaxial Cu.sub.2O light-absorbing layer and a lower transparent electrode are stacked on a single crystalline silicon substrate, in the process for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0032] FIG. 3 is a schematic view illustrating a device including a glass substrate bonded in advance to support the device even when removing a single crystalline silicon substrate, in the process for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0033] FIG. 4 is a schematic view illustrating a device from which a silicon crystalline substrate is removed, in the process for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0034] FIG. 5 is a schematic view illustrating a device including an N-type oxide layer, transparent electrode and a metal grid layer stacked successively on a single crystalline epitaxial Cu.sub.2O light-absorbing layer of the surface from which a single crystalline silicon substrate is removed, in the process for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

DETAILED DESCRIPTION

[0035] Hereinafter, the present disclosure will be explained with reference to the accompanying drawings. However, the present disclosure may be implemented in various different forms, and thus is not limited to the embodiments described hereinafter. In addition, parts unrelated to the description were omitted in the drawings in order to clearly explain the present disclosure, and similar drawing numerals were used for similar parts throughout the specification.

[0036] Throughout the specification, when a part is linked (connected, contacted, bound) with another part, it includes not only directly linked but also indirectly linked with another member interposed therebetween. Also, when a part includes a constitutional element, this means that it may further have other constitutional elements, rather than excluding other constitutional elements, unless otherwise stated.

[0037] The terms used herein are provided only to describe specific embodiments and are not intended to limit the present disclosure. Singular expressions include plural expressions, unless the context clearly indicates otherwise. In the present specification, terms such as including or having are intended to specify that there is a feature, number, step, operation, constitutional element, part or a combination thereof described in the specification, and should not be understood as excluding the existence or the possibility of addition of one or more other features, numbers, steps, operations, constitutional elements, parts or combinations thereof.

[0038] Hereinafter, exemplary embodiments of the present disclosure will be explained in detail with reference to the accompanying drawings.

[0039] In the case of conventional tandem solar cells, they have broadened the absorption spectrum of solar energy, but they could not be free from the problem of low energy conversion efficiency.

[0040] To solve the above-mentioned problem, the present disclosure is directed to providing an upper cell of a tandem solar cell using a single crystalline light-absorbing layer, and a method for manufacturing the same.

[0041] Hereinafter, the present disclosure will be explained with reference to the accompanying drawings. For reference, the drawings may be partially exaggerated to describe features of the present disclosure. In this case, it is preferred to interpret in light of the purpose of the present specification.

[0042] First, an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure will be explained.

[0043] The upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure includes: a lower transparent electrode disposed on a transparent substrate; an epitaxial Cu.sub.2O light-absorbing layer disposed on the lower transparent electrode; an N-type oxide layer disposed on the epitaxial Cu.sub.2O light-absorbing layer; an upper transparent electrode disposed on the N-type oxide layer; and a metal grid electrode disposed on the transparent electrode, wherein the epitaxial Cu.sub.2O light-absorbing layer has a single crystalline structure.

[0044] A tandem solar cell has a structure that looks like two solar cells are superimposed, and in general, the upper cell uses a material (e.g. perovskite) absorbing light with a short wavelength and the lower cell uses a material (e.g. silicon) absorbing light with a long wavelength. By virtue of such a combination of materials having different properties, the tandem solar cell absorbs a broader range of solar energy absorption spectrum of a solar cell and accomplishes higher energy conversion efficiency.

[0045] Herein, the tandem solar cell generally has a constitution of 2-terminal tandem solar cell (solar cell including a lower electrode and upper electrode). When each of the upper cell and lower cell has a lower electrode and upper electrode, the tandem solar cell may be referred to as a 4-terminal tandem solar cell.

[0046] Herein, the upper cell of a tandem solar cell according to the present disclosure may be used as a single solar cell, and preferably as an upper cell of a tandem solar cell, and more preferably as an upper cell of a 4-terminal tandem solar cell.

[0047] Hereinafter, the structure of the upper cell of a tandem solar cell according to the present disclosure will be explained in more detail.

The Upper Cell of a Tandem Solar Cell According to the Present Disclosure May Include a Lower Transparent Electrode Disposed on a Transparent Substrate.

[0048] Herein, the transparent substrate is used for physically supporting a device, and any substrate may be used with no particular limitation as long as it is transparent and can support a device. Preferably, a glass substrate may be used.

[0049] In addition, the lower transparent electrode disposed on the transparent substrate is not particularly limited, as long as it includes a material that can be used as a lower transparent electrode of a solar cell. However, the lower transparent electrode may preferably include at least one selected from the group consisting of indium tin oxide (ITO), antimony tin oxide (ATO) and antimony zinc oxide (AZO).

The Upper Cell of a Tandem Solar Cell According to the Present Disclosure May Include an Epitaxial Cu.SUB.2.O Light-Absorbing Layer Disposed on the Lower Transparent Electrode.

[0050] In the case of a conventional tandem solar cell, and particularly, in the case of a 4-terminal tandem solar cell, its light-absorbing layer has a polycrystalline structure. Accordingly, when using a Cu.sub.2O light-absorbing layer as a light-absorbing layer for manufacturing a solar cell of a high energy band, a light-absorbing layer having a polycrystalline structure has been used.

[0051] Herein, the light-absorbing layer of a solar cell functions to absorb solar light, to generate an electron-hole pair and to isolate electrons, thereby generating current.

[0052] Herein, the light-absorbing layer having a polycrystalline structure has a slightly low open voltage and fill factor. In a solar cell, the open voltage and fill factor represent important indicators in evaluating the performance of the solar cell.

[0053] The open voltage refers to the maximum voltage generated between a positive electrode and a negative electrode in a state where no external load is connected. As the open voltage increases, the maximum electric power that can be generated by a solar cell also increases.

[0054] In addition, in the case of a fill factor, it is an indicator representing a ratio of the maximum output of a solar cell to the theoretical maximum output and represents how efficiently an electron-hole pair generated in a light-absorbing layer is converted and output into current. As the fill factor increases, actual electric power generated by a solar cell approaches the theoretical maximum output.

[0055] Therefore, it is important to improve the open voltage and fill factor of a light-absorbing layer contained in a solar cell. For this purpose, according to the present disclosure, a Cu.sub.2O light-absorbing layer having a single crystalline structure is used as a light-absorbing layer.

[0056] Herein, in principle, when Cu.sub.2O of the light-absorbing layer forms a single crystalline structure, the defects of the light-absorbing layer are reduced, and the light-absorbing layer of a solar cell having a single crystalline structure shows a regular atom arrangement and constant alignment direction and causes no jamming in electron transport, resulting in a decrease in recombination of positive charges with negative charges. Based on this principle, the open voltage and fill factor of the light-absorbing layer can be improved.

[0057] Herein, since the thickness of the light-absorbing layer may cause a change in performance of the resultant upper cell of a tandem solar cell, there is a preferred thickness range. In this context, the epitaxial Cu.sub.2O light-absorbing layer may have a thickness of 1-10 m.

[0058] Herein, when the epitaxial Cu.sub.2O light-absorbing layer has a thickness of less than 1 m, the upper cell of a tandem solar cell may show a problem of insufficient light absorption. When the epitaxial Cu.sub.2O light-absorbing layer has a thickness of larger than 10 m, there may be a problem in that light cannot be transported sufficiently to the lower cell of a tandem solar cell.

[0059] Therefore, the epitaxial Cu.sub.2O light-absorbing layer may have a thickness of 1-10 m. Preferably, the epitaxial Cu.sub.2O light-absorbing layer may have a thickness of 2-6 m.

The Upper Cell of a Tandem Solar Cell According to the Present Disclosure May Include an N-Type Oxide Layer Disposed on the Epitaxial Cu.SUB.2.O Light-Absorbing Layer.

[0060] The N-type oxide layer refers to an oxide layer of N-type and may include an electron transport layer and a conductive oxide layer disposed on the electron transport layer.

[0061] Accordingly, both the electron transport layer and the conductive oxide layer may exhibit N-type.

[0062] Herein, the electron transport layer functions to transport the electrons generated in the light-absorbing layer of a solar cell efficiently toward a negative electrode.

[0063] In addition, the conductive oxide layer functions to collect the electrons to generate electric power.

[0064] Herein, any material may be used for the electron transport layer with no particular limitation as long as it is one used conventionally for a solar cell, but preferably, the electron transport layer may include at least one selected from the group consisting of Ga.sub.2O.sub.3 and TiO.sub.2.

[0065] Further, any material may be used for the conductive oxide layer with no particular limitation as long as it is one used conventionally for a solar cell, but preferably, the conductive oxide layer may include at least one selected from the group consisting of zinc tin oxide (ZTO) and Zn.sub.1-xGe.sub.xO (wherein x is a number satisfying 0<x<1).

The Upper Cell of a Tandem Solar Cell According to the Present Disclosure May Include an Upper Transparent Electrode Disposed on the N-Type Oxide Layer.

[0066] Any transparent electrode may be used with no particular limitation as long as it is one used conventionally for a solar cell, but preferably, the upper transparent electrode may include at least one selected from the group consisting of antimony zinc oxide (AZO) and indium tin oxide (ITO).

The Upper Cell of a Tandem Solar Cell According to the Present Disclosure May Include a Metal Grid Electrode Disposed on the Upper Transparent Electrode.

[0067] Any conventional metal electrode may be used for the metal grid electrode with no particular limitation, but preferably, the metal grid electrode may include Ag, Al or Cu.

[0068] Hereinafter, a method for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure will be explained.

[0069] FIG. 1 is a flow chart illustrating the steps of the method for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0070] Referring to FIG. 1, the method for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure may include the steps of: (S100) stacking a single crystalline epitaxial Cu.sub.2O light-absorbing layer on a single crystalline silicon substrate; (S200) stacking a lower transparent electrode on the single crystalline epitaxial Cu.sub.2O light-absorbing layer and then bonding a transparent substrate onto the lower transparent electrode; (S300) removing the single crystalline silicon substrate through etching; (S400) stacking an N-type oxide layer, including an electron transport layer and a conductive oxide layer disposed on the electron transport layer, on the single crystalline epitaxial Cu.sub.2O light-absorbing layer of the surface from which the single crystalline silicon substrate is removed; and (S500) stacking an upper transparent electrode and a metal grid electrode successively on the N-type oxide layer.

As the First Step, the Method May Include a Step of Stacking a Single Crystalline Epitaxial Cu.SUB.2.O Light-Absorbing Layer on a Single Crystalline Silicon Substrate (S100).

[0071] The reason why the single crystalline silicon substrate is used is for growing a single crystalline structure of an epitaxial Cu.sub.2O light-absorbing layer to be formed on the single crystalline silicon substrate. For this purpose, it is important to prepare a single crystalline silicon substrate.

[0072] Herein, since the single crystalline silicon substrate is removed through etching in the subsequent step, any silicon substrate having a single crystalline structure may be used with no particular limitation in thickness.

[0073] Meanwhile, a specific aqueous solution may be prepared and applied onto the single crystalline silicon substrate in order to stack the single crystalline epitaxial Cu.sub.2O light-absorbing layer on the single crystalline silicon substrate.

[0074] Particularly, the step of stacking a single crystalline epitaxial Cu.sub.2O light-absorbing layer may include introducing the single crystalline silicon substrate into an aqueous solution containing Cu(II) and lactate ions to perform electrodeposition and carrying out drying to form the single crystalline epitaxial Cu.sub.2O light-absorbing layer.

[0075] Herein, when the aqueous solution containing Cu(II) and lactate ions is applied onto the single crystalline silicon substrate and dried, a single crystalline epitaxial Cu.sub.2O light-absorbing layer is formed. This is because the single crystalline silicon substrate functions as seeds for the growth of single crystals of a Cu.sub.2O thin film.

[0076] Meanwhile, the aqueous solution may have a Cu(II) ion concentration of 0.1-1 M. The reason is as follows. When the aqueous solution has a Cu(II) ion concentration of less than 0.1 M, a problem may be generated in that sufficient Cu cannot be supplied. When the aqueous solution has a Cu(II) ion concentration of higher than 1 M, a problem may be generated in that a thin film having desired quality cannot be formed due to excessive Cu supply.

[0077] In addition, the aqueous solution may have a lactate ion concentration of 1-5 M.

[0078] Herein, when the lactate ion concentration of the aqueous solution does not fall within a range of 1-5 M, a problem may be generated in that an optimized amount of oxygen cannot be supplied. Therefore, the above-defined range of concentration is preferred.

[0079] According to an exemplary embodiment of the present disclosure, the aqueous solution may have a ratio of lactate ions based on Cu(II) ions of 1:1 to 1:50.

[0080] Herein, when the ratio of lactate ions based on Cu(II) ions of the aqueous solution does not fall within the above-defined range, a problem may be generated in that the light-absorbing layer cannot satisfy a compositional ratio of Cu (copper) and oxygen (O) optimized for high energy conversion efficiency.

[0081] Meanwhile, the Cu.sub.2O thin film as a light-absorbing layer may be stacked by introducing the single crystalline silicon wafer to the aqueous solution and using an electrodeposition process, or by using a sputtering device instead of the aqueous solution.

[0082] Herein, the epitaxial Cu.sub.2O light-absorbing layer may have a thickness of 1-10 m.

As the Second Step, the Method May Include a Step of Stacking a Lower Transparent Electrode on the Single Crystalline Epitaxial Cu.sub.2O Light-Absorbing Layer and then Bonding a Transparent Substrate onto the Lower Transparent Electrode (S200).

[0083] Herein, any material may be used for the lower transparent electrode with no particular limitation as long as it is one that can be used for a lower transparent electrode of a solar cell, but preferably, the lower transparent electrode may include at least one selected from the group consisting of indium tin oxide (ITO), antimony tin oxide (ATO) and antimony zinc oxide (AZO).

[0084] In addition, the transparent substrate is used for physically supporting a device, and any transparent substrate may be used with no particular limitation as long as it is transparent and can support the device, a glass substrate being used preferably.

[0085] FIG. 2 is a schematic view illustrating a device in which a single crystalline epitaxial Cu.sub.2O light-absorbing layer and a lower transparent electrode are stacked on a single crystalline silicon substrate, in the process for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0086] FIG. 3 is a schematic view illustrating a device including a glass substrate bonded in advance to support the device even when removing a single crystalline silicon substrate, in the process for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0087] Referring to FIG. 2 and FIG. 3, it can be seen that the single crystalline light-absorbing layer is formed on the silicon substrate, the lower transparent electrode is formed on the single crystalline light-absorbing layer, and the transparent substrate is formed on the lower transparent electrode.

As the Third Step, the Method May Include a Step of Removing the Single Crystalline Silicon Substrate Through Etching (S300).

[0088] Since the single crystalline silicon substrate is one used for forming the single crystalline epitaxial Cu.sub.2O light-absorbing layer, it is removed through an etching process after the single crystalline epitaxial Cu.sub.2O light-absorbing layer is formed. Herein, a mechanical polishing process, etching process using a chemical solution or a dry etching process may be carried out to etch the single crystalline silicon substrate.

As the Fourth Step, the Method May Include a Step of Stacking an N-Type Oxide Layer, Including an Electron Transport Layer and a Conductive Oxide Layer Disposed on the Electron Transport Layer, on the Single Crystalline Epitaxial Cu.sub.2O Light-Absorbing Layer of the Surface from which the Single Crystalline Silicon Substrate is Removed (S400).

[0089] Herein, an atomic layer deposition (ALD) or sputtering process may be used to perform stacking of the N-type oxide layer, including an electron transport layer and a conductive oxide layer disposed on the electron transport layer, on the single crystalline epitaxial Cu.sub.2O light-absorbing layer of the surface from which the single crystalline silicon substrate is removed.

[0090] Herein, any material may be used for the electron transport layer with no particular limitation as long as it is one used conventionally for a solar cell, but preferably, the electron transport layer may include at least one selected from the group consisting of Ga.sub.2O.sub.3 and TiO.sub.2.

[0091] Further, any material may be used for the conductive oxide layer with no particular limitation as long as it is one used conventionally for a solar cell, but preferably, the conductive oxide layer may include at least one selected from the group consisting of zinc tin oxide (ZTO) and Zn.sub.1-xGe.sub.xO (wherein x is a number satisfying 0<x<1).

As the Final Step, the Method May Include a Step of Stacking an Upper Transparent Electrode and a Metal Grid Electrode Successively on the N-Type Oxide Layer (S500).

[0092] Herein, a sputtering process or a screen printing process is used in order to stack the upper transparent electrode and a metal grid electrode successively.

[0093] In addition, any transparent electrode may be used with no particular limitation as long as it is one used conventionally for a solar cell, but preferably, the upper transparent electrode may include at least one selected from the group consisting of antimony zinc oxide (AZO) and indium tin oxide (ITO).

[0094] In addition, a conventional metal electrode may be used for the metal grid electrode with no particular limitation, but preferably, the metal grid electrode may include Ag, Al or Cu.

[0095] FIG. 5 is a schematic view illustrating a device including an N-type oxide layer, a transparent electrode and a metal grid layer stacked successively on a single crystalline epitaxial Cu.sub.2O light-absorbing layer of the surface from which a single crystalline silicon substrate is removed, in the process for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0096] Referring to FIG. 5, it can be seen that an upper cell of a 4-terminal tandem solar cell is obtained through the method for manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure.

[0097] Hereinafter, the present disclosure will be described in more detail with reference to Examples, Comparative Examples and Test Examples. These Examples, Comparative Examples and Test Examples are for illustrative purposes only, and the scope of the present disclosure is not limited by these Examples, Comparative Examples and Test Examples.

Example

Manufacture of Upper Cell of 4-Terminal Tandem Solar Cell

[0098] For manufacturing an upper cell of a tandem solar cell according to an exemplary embodiment of the present disclosure, first, a silicon wafer as a single crystalline silicon wafer was introduced into an aqueous solution containing Cu(II) and lactate ions, and electrodeposition was carried out to stack a single crystalline epitaxial Cu.sub.2O light-absorbing layer on the single crystalline silicon wafer.

[0099] Herein, the aqueous solution had a Cu(II) ion concentration of 0.4 M and a lactate ion concentration of 3 M.

[0100] In addition, drying was carried out at a temperature of 100 C. for 30 minutes to dry the aqueous solution remaining on the surface of silicon.

[0101] Next, for forming a transparent electrode to be used as a rear electrode on the single crystalline epitaxial Cu.sub.2O light-absorbing layer, an ATO (antimony tin oxide) rear electrode was stacked to a thickness of 200 nm by using a sputtering process.

[0102] Then, an ITO (indium tin oxide) rear electrode was stacked to a thickness of 200 nm on the ATO rear electrode.

[0103] After that, a glass substrate having a transparent electrode made of ITO was bonded onto the rear electrode.

[0104] Herein, the glass substrate had a thickness of 1 mm.

[0105] Subsequently, a dry or wet etching process was carried out to remove the silicon wafer.

[0106] Finally, an atomic layer deposition (ALD), sputtering or screen printing process was carried out to form an N-type layer, a transparent electrode and a metal grid electrode successively on the epitaxial Cu.sub.2O light-absorbing layer of the surface opposite to the glass substrate.

[0107] In this manner, an upper cell of a 4-terminal tandem solar cell was obtained according to an exemplary embodiment of the present disclosure.

[0108] The foregoing description of the present disclosure is for illustrative purposes only, and those skilled in the art will understand that it may be easily transformed into other specific forms without changing the technical idea or essential features of the present disclosure. Therefore, it should be understood that the embodiments described above are exemplary and not limited in all aspects. For example, each constitutional element described in a single form may be implemented separately, or similarly, constitutional elements described as separated may be implemented in a combined form.

[0109] The scope of the present disclosure should be defined by the claims described hereinafter, and all changes or modifications derived from the meaning and scope of the claims and the equivalent concept thereof should be interpreted as being included in the scope of the present disclosure.