HEAT FLOW SWITCHING ELEMENT

Abstract

Provided is a heat flow switching element that has a larger change in thermal conductivity, has excellent thermal responsiveness, and is capable of directly detecting a temperature change. The heat flow switching element according to the present invention includes: a heat flow control element part 10 including an N-type semiconductor layer 3, an insulator layer 4 laminated on the N-type semiconductor layer, and a P-type semiconductor layer 5 laminated on the insulator layer; and thermosensitive element parts 11A and 11B joined to the heat flow control element part. In addition, the thermosensitive element parts include: a thin-film thermistor portion made of a thermistor material; and a pair of counter electrodes formed facing each other on an upper side and/or a lower side of the thin-film thermistor portion, and the thin-film thermistor portion is laminated on an upper side and/or a lower side of the heat flow control element part.

Claims

1. A heat flow switching element comprising: a heat flow control element part including an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, and a P-type semiconductor layer laminated on the insulator layer; and a thermosensitive element part joined to the heat flow control element part.

2. The heat flow switching element according to claim 1, wherein the thermosensitive element part includes: a thin-film thermistor portion made of a thermistor material; and a pair of counter electrodes formed facing each other on an upper side and/or a lower side of the thin-film thermistor portion, and the thin-film thermistor portion is laminated on an upper side and/or a lower side of the heat flow control element part.

3. The heat flow switching element according to claim 1, wherein the thermosensitive element part is provided on each of a high temperature side and a low temperature side of the heat flow control element part.

4. The heat flow switching element according to claim 1, wherein in the heat flow control element part, a plurality of the N-type semiconductor layers and a plurality of the P-type semiconductor layers are alternately laminated with the insulator layer interposed.

5. The heat flow switching element according to claim 1, comprising: an upper high thermal conductive part provided at an uppermost portion of the heat flow control element part; a lower high thermal conductive part provided at a lowermost portion of the heat flow control element part; and an outer-peripheral heat insulating part provided covering an outer peripheral edge of the N-type semiconductor layer, the insulator layer, and the P-type semiconductor layer, wherein the upper high thermal conductive part and the lower high thermal conductive part are made of a material having a higher thermal conductivity than the outer-peripheral heat insulating part, and the thermosensitive element part is joined to the upper high thermal conductive part and/or the lower high thermal conductive part.

6. The heat flow switching element according to claim 1, comprising a heat flow sensor part joined to the heat flow control element part and capable of detecting a direction of heat flow.

7. The heat flow switching element according to claim 6, wherein the heat flow sensor part includes: a plurality of anomalous Nernst material films extending in a same direction and arranged parallel to each other in a planar direction of the heat flow control element part, the plurality of anomalous Nernst material films exhibiting an anomalous Nernst effect; and a connection wiring electrically connecting the plurality of anomalous Nernst material films in series, and the anomalous Nernst material films are laminated on the heat flow control element part.

8. The heat flow switching element according to claim 7, wherein the thermosensitive element part includes: a thin-film thermistor portion made of a thermistor material; and a pair of counter electrodes formed facing each other on an upper side and/or a lower side of the thin-film thermistor portion, and the thin-film thermistor portion and the anomalous Nernst material films are laminated on each other.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0039] FIG. 1 is a perspective view illustrating a first embodiment of a heat flow switching element according to the present invention.

[0040] FIG. 2 is a conceptual cross-sectional view illustrating the heat flow switching element in the first embodiment.

[0041] FIG. 3 is a plan view illustrating the heat flow switching element without an upper protective film in the first embodiment.

[0042] FIG. 4 is a conceptual diagram for explaining a principle in the first embodiment.

[0043] FIG. 5 is a perspective view illustrating a second embodiment of a heat flow switching element according to the present invention.

[0044] FIG. 6 is a conceptual cross-sectional view illustrating a third embodiment of a heat flow switching element according to the present invention.

[0045] FIG. 7 is a plan view illustrating the heat flow switching element without an upper protective film in the third embodiment.

[0046] FIG. 8 is a conceptual cross-sectional view illustrating a fourth embodiment of a heat flow switching element according to the present invention.

[0047] FIG. 9 is a plan view illustrating the heat flow switching element in the fourth embodiment.

DESCRIPTION OF EMBODIMENTS

[0048] Hereinafter, a first embodiment of a heat flow switching element according to the present invention will be described with reference to FIGS. 1 to 4. Note that in the drawings for use in the following description, the scale is appropriately changed as necessary in order to make each part recognizable or easily recognizable.

[0049] As illustrated in FIGS. 1 and 2, the heat flow switching element 1 according to the present embodiment includes a heat flow control element part 10 and thermosensitive element parts 11A and 11B joined to the heat flow control element part 10. The heat flow control element part 10 includes an N-type semiconductor layer 3, an insulator layer 4 laminated on the N-type semiconductor layer 3, and a P-type semiconductor layer 5 laminated on the insulator layer 4.

[0050] As illustrated in FIGS. 2 and 3, each of the thermosensitive element parts 11A and 11B includes a thin-film thermistor portion 11a made of a thermistor material, and a pair of counter electrodes 11b formed facing each other on an upper side and/or a lower side of the thin-film thermistor portion 11a. Note that an insulating protective film 11c is laminated on the thin-film thermistor portion 11a and the counter electrodes 11b.

[0051] In the present embodiment, as illustrated in FIG. 3, the pair of counter electrodes 11b is placed facing each other on the upper side of the thin-film thermistor portion 11a. Note that the pair of counter electrodes 11b is connected to a pair of lead wires 8a.

[0052] The thin-film thermistor portion 11a is laminated on an upper side and/or a lower side of the heat flow control element part 10.

[0053] In the present embodiment, the thermosensitive element parts 11A and 11B are provided on both the high temperature side and the low temperature side of the heat flow control element part 10.

[0054] That is, in the present embodiment, the heat flow direction is set to the lamination direction, and the thermosensitive element parts 11A and 11B are provided on both the upper portion and the lower portion of the heat flow control element part 10.

[0055] The heat flow switching element 1 according to the present embodiment also includes an upper high thermal conductive part 18 provided at an uppermost portion of the heat flow control element part 10, a lower high thermal conductive part 2 (base material) provided at a lowermost portion of the heat flow control element part 10, and an outer-peripheral heat insulating part 19 provided covering an outer peripheral edge of the N-type semiconductor layer 3, the insulator layer 4, and the P-type semiconductor layer 5.

[0056] The upper high thermal conductive part 18 and the lower high thermal conductive part 2 are made of a material having a higher thermal conductivity than the outer-peripheral heat insulating part 19.

[0057] The thermosensitive element parts 11A and 11B are joined to the upper high thermal conductive part 18 and/or the lower high thermal conductive part 2.

[0058] In the present embodiment, the thermosensitive element part 11B is joined onto the upper high thermal conductive part 18. In addition, the thermosensitive element part 11A is formed on the lower high thermal conductive part 2, and the heat flow control element part 10 is formed on the thermosensitive element part 11A with the protective film 11c interposed therebetween, whereby the thermosensitive element part 11A is joined to the heat flow control element part 10 via the protective film 11c.

[0059] Further, as illustrated in FIG. 2, the heat flow switching element 1 according to the present embodiment includes an N-side electrode 6 connected to the N-type semiconductor layer 3 and a P-side electrode 7 connected to the P-type semiconductor layer 5.

[0060] Various depositing methods can be adopted to form films, such as sputtering and molecular-beam epitaxy (MBE).

[0061] Note that when it is possible to apply a voltage directly to the N-type semiconductor layer 3 and the P-type semiconductor layer 5, the N-side electrode 6 and the P-side electrode 7 are unnecessary.

[0062] The N-side electrode 6 and the P-side electrode 7 are connected to lead wires 6a and 7a, respectively.

[0063] The N-side electrode 6 and the P-side electrode 7 are connected to an external power supply V so that a voltage is applied thereto.

[0064] The lower high thermal conductive part 2 is an insulating base material. On this base material (lower high thermal conductive part 2), the lower thermosensitive element part 11A, the heat flow control element part 10, and the upper thermosensitive element part 11B are laminated in this order.

[0065] For example, the upper high thermal conductive part 18 is made of a high thermal conductive material such as a silicon-based resin (silicone), and a high thermal conductive substrate made of alumina or the like is adopted as the lower high thermal conductive part 2, which is the base material.

[0066] The outer-peripheral heat insulating part 19 is made of a low thermal conductive material such as an epoxy resin.

[0067] The outer-peripheral heat insulating part 19 covers the periphery of the insulator layer 4 with its uppermost portion exposed, and the upper high thermal conductive part 18 is formed thereon in contact with the exposed uppermost portion of the insulator layer 4.

[0068] Note that the outer-peripheral heat insulating part 19 also covers the N-side electrode 6 and the P-side electrode 7 located on the outer periphery of the corresponding layers and connected to lead wires 6a and 7a.

[0069] In the heat flow control element part 10, a plurality of N-type semiconductor layers 3 and a plurality of P-type semiconductor layers 5 are alternately laminated with the insulator layers 4 interposed therebetween.

[0070] Specifically, the insulator layer 4 is first deposited on the lower thermosensitive element part 11A, and the N-type semiconductor layer 3 and the P-type semiconductor layer 5 are repeatedly laminated thereon in this order with the insulator layer 4 interposed therebetween, whereby a laminate of three N-type semiconductor layers 3, three P-type semiconductor layers 5, and seven insulator layers 4 is formed.

[0071] Each N-type semiconductor layer 3 is connected to an N-side coupling portion 3a provided at the base end thereof, and the N-side electrode 6 is formed in a part of the N-side coupling portion 3a. Each P-type semiconductor layer 5 is connected to a P-side coupling portion 5a provided at the base end thereof, and the P-side electrode 7 is formed in a part of the P-side coupling portion 5a.

[0072] Each of the above layers is patterned using a metal mask. Note that the plurality of N-type semiconductor layers 3, the plurality of P-type semiconductor layers 5, and the plurality of insulator layers 4 are laminated through depositing in which the position of the metal mask is shifted.

[0073] The N-type semiconductor layer 3 and the P-type semiconductor layer 5 are made of thin films having a thickness of less than 1 μm. In particular, because electric charges e generated at an interface with the insulator layer 4 and in the vicinity thereof are accumulated mainly in the thickness range of 5 to 10 nm, the N-type semiconductor layer 3 and the P-type semiconductor layer 5 are more preferably formed with a film thickness of 100 nm or less. Note that the N-type semiconductor layer 3 and the P-type semiconductor layer 5 preferably have a film thickness of 5 nm or more.

[0074] The insulator layer 4 preferably has a film thickness of 40 nm or more, and is set to a thickness that does not cause dielectric breakdown. Note that the insulator layer 4 preferably has a film thickness of less than 1 μm because too large a thickness makes it difficult to carry electric charges e. In FIG. 4, the type of electric charge e generated at the interface between the N-type semiconductor layer 3 and the insulator layer 4 and in the vicinity thereof is an electron, which is indicated by a white circle. In addition, the type of electric charge e generated at the interface between the P-type semiconductor layer 5 and the insulator layer 4 and in the vicinity thereof is an electron hole, which is indicated by a black circle. (An electron hole is a hole formed due to the lack of an electron in the valence band of a semiconductor, and appears to have a relatively positive electric charge.)

[0075] The N-type semiconductor layer 3 and the P-type semiconductor layer 5 are preferably degenerate semiconductor materials having low lattice thermal conduction, and for example, a thermoelectric material such as SiGe, a nitride semiconductor such as CrN, an oxide semiconductor such as VO.sub.2, or the like can be adopted. Note that the N-type and P-type conductivities are set by adding N-type and P-type dopants to the semiconductor materials, for example.

[0076] The insulator layer 4 is preferably an insulating material having a low thermal conductivity, and an insulator such as SiO.sub.2, a dielectric such as HfO.sub.2 or BiFeO.sub.3, an organic material such as polyimide (PI), or the like can be adopted. In particular, a dielectric material having a high dielectric constant is preferable.

[0077] The N-side electrode 6 and the P-side electrode 7 are made of a metal such as Mo or Al, for example.

[0078] As illustrated in FIG. 4, in the heat flow switching element 1 according to the present embodiment, electric charges e capable of heat conduction are generated at the interface between the N-type semiconductor layer 3 and the insulator layer 4 and in the vicinity thereof by application of an electric field (voltage), whereby the generated electric charges e carry heat and the thermal conductivity changes.

[0079] Note that the thermal conductivity is obtained using the following formula.

Thermal conductivity=Lattice thermal conductivity+Electron thermal conductivity

[0080] Among these two types of thermal conductivities, the electron thermal conductivity changes according to the amount of electric charge generated by application of an electric field (voltage). Therefore, in the present embodiment, a material having a smaller lattice thermal conductivity is suitable for obtaining a larger change in thermal conductivity. Therefore, for any of the N-type semiconductor layer 3, the insulator layer 4, and the P-type semiconductor layer 5, a material having a smaller lattice thermal conductivity, that is, a material having a smaller thermal conductivity, is selected.

[0081] The thermal conductivity of the material constituting each layer of the present embodiment is preferably as low as 5 W/mK or less, and more preferably 1 W/mK or less, which can be achieved by adopting the above-described materials.

[0082] In addition, the electron thermal conductivity increases according to the amount of electric charge e generated according to the applied external electric field (voltage).

[0083] Note that because electric charges e are generated at the interfaces between the N-type semiconductor layer 3 and the insulator layer 4 and between the P-type semiconductor layer 5 and the insulator layer 4, the amount of generated electric charge e can be increased by increasing the total area of the interfaces.

[0084] An example of a method for measuring the thermal conductivity is a pulsed light heating thermoreflectance method, which involves instantaneously heating a thin film sample formed on a substrate with a pulse laser, and measuring the rate of decrease in surface temperature or the rate of increase in surface temperature due to thermal diffusion into the thin film, thereby obtaining the thermal diffusivity or the thermal permeability of the thin film in the film pressure direction. Note that a type of pulsed light heating thermoreflectance method in which thermal diffusion is directly measured is called rear heating/front detection (RF), which requires the use of a transparent substrate through which a pulse laser can pass; therefore, when the substrate is not a transparent substrate, the thermal conductivity is measured using font heating/front detection (FF), which is a type of pulsed light heating thermoreflectance method in which the thermal permeability is measured and converted into a thermal conductivity. Note that this measurement requires a metal film, for which Mo, Al, or the like is adopted.

[0085] In the thermosensitive element parts 11A and 11B, as illustrated in FIG. 3, the pair of counter electrodes 11b each have a comb shape having a plurality of comb portions 11d protruding in the opposite direction, and the comb portions 11d of one counter electrode 11b and the comb portions 11d of the other counter electrode 11b are alternately arranged side by side.

[0086] As the counter electrodes 11b, for example, various metal films such as a single layer of a Cr film and a laminated metal film of a Cr film and an Au film can be adopted.

[0087] As the thin-film thermistor portion 11a, an NTC thermistor (element which exhibits a negative temperature characteristic and whose electric resistance value exponentially decreases with increase in temperature) is generally adopted. Alternatively, in order to quickly detect abnormal temperature detection, a PTC thermistor (element which exhibits a positive temperature characteristic and whose electric resistance value increases with increase in temperature, or an element which exhibits a positive temperature characteristic and whose electric resistance value rapidly increases with increase in temperature once the temperature exceeds a certain temperature), or a CTR thermistor (element which is similar to NTC in that it has a negative temperature coefficient, but whose electric resistance value rapidly decreases once the temperature exceeds a certain temperature range) may be adopted.

[0088] Generally-known materials for the NTC thermistor are oxide materials, examples of which include oxides such as (Mn, Co, Ni).sub.3O.sub.4 having a spinel-type crystal structure and (La, Ca)(Cr, Mn)O.sub.3 having a perovskite-type crystal structure. However, the thin-film thermistor portion 11a in the present embodiment is preferably made of a material consisting of a hexagonal wurtzite single-phase metal nitride indicated by the general formula M.sub.xA.sub.yN.sub.z (where M represents at least one of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu, and A represents Al or (Al and Si); 0.70≤y/(x+y)≤0.98, 0.4≤z≤0.5, x+y+z=1). In the present embodiment, as the thin-film thermistor portion 11a, a hexagonal wurtzite single-phase metal nitride indicated by the general formula Ti.sub.xAl.sub.yN.sub.z (where 0.70≤y/(x+y)≤0.98, 0.4≤z≤0.5, x+y+z=1) is adopted.

[0089] For example, in the case of Ti—Al—N, the thin-film thermistor portion 11a is deposited by performing reactive sputtering in a nitrogen-containing atmosphere using a Ti—Al alloy sputtering target.

[0090] The wurtzite crystal structure is a hexagonal space group P6.sub.3mc (No. 186), and M and A belong to the same atomic site (M represents at least one of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu, and A represents Al or (Al and Si)), and are in what is called a solid solution state. The wurtzite form has a vertex-connected structure of (M, A)N.sub.4 tetrahedra, the nearest site to the (M, A) site is N (nitrogen), and (M, A) has four-nitrogen coordination.

[0091] In addition to Ti, V (vanadium), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), and Cu (copper) can similarly exist at the same atomic site as Ti in the crystal structure, and can be an element of M. Effective ionic radius is a physical property value that is often used to identify the distance between atoms. Using Shannon's well-known ionic radii, it can be estimated that wurtzite M.sub.xA.sub.yN.sub.z (where M represents at least one of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu, and A represents Al or (Al and Si)) is logically obtained.

[0092] The effective ionic radii of ion species Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Si are shown in Table 1 below (reference article: R. D. Shannon, Acta Crystallogr., Sect. A, 32, 751 (1976)).

[0093] Note that the thermistor characteristic of Ti—Al—N is obtained by carrier doping that replaces the Al site of Al—N, i.e. a nitride insulator having a wurtzite crystal structure, partially with Ti to increase electrical conduction. Regarding V, Cr, Mn, Fe, Co, Ni, and Cu, which are 3d transition metals similarly to Ti, thermistor characteristics can be obtained in wurtzite M.sub.xA.sub.yN.sub.z (where M represents at least one of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu, and A represents Al or (Al and Si)).

TABLE-US-00001 TABLE 1 Effective ionic radii Reference article R.D.Shannon, Acta Crystallogr., Sect.A, 32, 751(1976) 4 coordination 6 coordination (for reference) Ion Ionic Ion Ionic species radius species radius Al.sup.3+ 0.039 Al.sup.3+ 0.0535 Ti.sup.4+ 0.042 Ti.sup.3+ 0.067 V.sup.5+ 0.0355 V.sup.3+ 0.064 Cr.sup.4+ 0.041 Cr.sup.3+ 0.0615 Cr.sup.5+ 0.0345 Mn.sup.2+ 0.066 Mn.sup.3+ (HS) 0.0645 Mn.sup.4+ 0.039 Mn.sup.5+ 0.033 Mn.sup.3+ (LS) 0.058 Fe.sup.2+ 0.063 Fe.sup.3+ (HS) 0.0645 Fe.sup.3+ 0.049 Fe.sup.3+ (LS) 0.055 Co.sup.2+ 0.058 Co.sup.3+ (HS) 0.061 Co.sup.4+ 0.04 Co.sup.3+ (LS) 0.0545 Ni.sup.2+ 0.055 Ni.sup.3+ (HS) 0.060 Ni.sup.3+ (LS) 0.056 Cu.sup.2+ 0.057 Cu.sup.3+ (LS) 0.054 Si.sup.4+ 0.026 Si.sup.4+ 0.040 Unit:nm

[0094] As described above, the thin-film thermistor portion 11a is formed by applying an NTC thermistor, a PTC thermistor, a CTR thermistor, or various thermistor materials, and in general, formed by adopting an NTC thermistor which exhibits a negative temperature characteristic and whose electric resistance value continuously decreases with increase in temperature. Note that if a PTC thermistor whose electric resistance value rapidly increases with increase in temperature once the temperature exceeds a certain temperature or a CTR thermistor whose electric resistance value rapidly decreases with increase in temperature once the temperature exceeds a certain temperature is used as the thin-film thermistor portion 11a, abnormal temperature can be detected more quickly, and the heat flow of the heat flow control element part can be adjusted with high responsiveness.

[0095] For the PTC thermistor, a material which exhibits a positive temperature characteristic and whose electric resistance value rapidly increases with increase in temperature once the temperature exceeds a certain temperature is adopted. Examples of such materials include BaTiO.sub.3, SrTiO.sub.3, a compound based on these materials in which a small amount of metal element such as Pb is partially substituted, and a conductive polymer (polymer containing conductive particles dispersed therein; the polymer is melted to cut off the contact of the conductive powder and increase the electric resistance).

[0096] For the CTR thermistor, a metal insulator transition material whose electric resistance value rapidly decreases with increase in temperature once the temperature exceeds a certain temperature is adopted. Examples of such materials include VO.sub.2 and a compound based on this material in which a small amount of metal element is partially substituted.

[0097] Various depositing methods such as sputtering, sol-gel processing, and printing are applied to prepare a thin film made of these PTC thermistor or CTR thermistor materials.

[0098] As described above, the heat flow switching element 1 according to the present embodiment includes: the heat flow control element part 10 including the N-type semiconductor layer 3, the insulator layer 4 laminated on the N-type semiconductor layer 3, and the P-type semiconductor layer 5 laminated on the insulator layer 4; and the thermosensitive element parts 11A and 11B joined to the heat flow control element part 10. Therefore, a voltage applied to the P-type semiconductor layer 5 and the N-type semiconductor layer 3 induces electric charges e mainly at the interfaces between the P-type semiconductor layer 5 and the insulator layer 4 and between the N-type semiconductor layer 3 and the insulator layer 4, and the thermal conductivity changes as the electric charges e carry heat.

[0099] In particular, because electric charges e induced by the external voltage are generated both at the interface between the N-type semiconductor layer 3 and the insulator layer 4 and in the vicinity thereof and at the interface between the P-type semiconductor layer 5 and the insulator layer 4 and in the vicinity thereof, the amount of generated electric charge is so large that a large change in thermal conductivity and a high thermal responsiveness can be obtained. In addition, because of the mechanism that physically changes the thermal conductivity without using a chemical reaction mechanism, it is possible to immediately transition to a state in which thermal conduction has changed, and to obtain good thermal responsiveness.

[0100] In addition, because the amount of electric charge induced at the interfaces changes depending on the magnitude of the external voltage, it is possible to adjust the thermal conductivity by adjusting the external voltage, and thus to actively control the heat flow through the present element.

[0101] Note that the lower high thermal conductive part 2, which is the base material, is an insulator in which no current is generated due to voltage application; therefore, no Joule heat is generated. Thus, it is possible to actively control the heat flow without self-heating.

[0102] Furthermore, the heat flow switching element 1 has a composite structure including the thermosensitive element parts 11A and 11B joined to the heat flow control element part 10. Therefore, the temperature change associated with a change in thermal conductivity by the heat flow control element part 10 can be directly detected by the thermosensitive element parts 11A and 11B. That is, while the temperature is directly monitored by the thermosensitive element parts 11A and 11B, the heat flow can be adjusted with high responsiveness by the heat flow control element part 10 of the voltage application type capable of high-speed thermal response.

[0103] In particular, because the thin-film thermistor portion 11a is laminated on the upper side and/or the lower side of the heat flow control element part 10, the thin-film thermistor portion 11a is in surface contact with the heat flow control element part 10, which reduces the thermal resistance, enables accurate temperature detection, and contributes to reducing the thickness.

[0104] In addition, because the thermosensitive element parts 11A and 11B are provided on both the high temperature side and the low temperature side of the heat flow control element part 10, it is possible to detect the temperatures on both the high temperature side and the low temperature side of the heat flow control element part 10, and to more accurately detect the state of heat conduction that changes from moment to moment according to the heat flow direction.

[0105] In addition, because the heat flow can be adjusted by the external voltage in the heat flow control element part according to the temperatures detected on both the high temperature side and the low temperature side, even when the temperature of an object in thermal contact with the heat flow switching element changes with time, heat flow switching with a very high thermal responsiveness can be performed according to the current state of heat conduction.

[0106] Furthermore, because the plurality of N-type semiconductor layers 3 and the plurality of P-type semiconductor layers 5 are alternately laminated with the insulator layers 4 interposed therebetween, a plurality of interfaces are formed between the N-type semiconductor layers 3 and the insulator layers 4 and between the P-type semiconductor layers 5 and the insulator layers 4, which induces a large number of electric charges e that can cause a significant change in thermal conductivity.

[0107] Next, second to fourth embodiments of heat flow switching elements according to the present invention will be described below with reference to FIGS. 5 to 8. In the following description of each embodiment, components identical to those described in the above embodiment are denoted by the same reference signs, and the description thereof will be omitted.

[0108] The difference between the second embodiment and the first embodiment is that whereas the thermosensitive element parts 11A and 11B in the first embodiment are provided on the upper side and the lower side of the heat flow control element part 10, a heat flow switching element 21 according to the second embodiment is provided with a pair of thermosensitive element parts 21A and 21B apart from each other on the upper surface of a heat flow control element part 20, as illustrated in FIG. 5.

[0109] That is, in the second embodiment, the heat flow direction is the in-plane direction (planar direction) of the heat flow control element part 20, the thermosensitive element part 21A is installed on the end portion on the high temperature side, and the thermosensitive element part 21B is installed on the end portion on the low temperature side.

[0110] Note that the heat flow control element part 20 according to the second embodiment is provided in a band shape longer along the heat flow direction than in the first embodiment.

[0111] Thus, the heat flow switching element 21 according to the present embodiment also includes the thermosensitive element parts 21A and 21B provided on both the high temperature side and the low temperature side of the heat flow control element part 20, it is possible to detect the temperatures on both the high temperature side and the low temperature side of the heat flow control element part 20, and to more accurately detect the state of heat conduction according to the heat flow direction.

[0112] Next, the difference between the third embodiment and the first embodiment is that whereas the thermosensitive element parts 11A and 11B in the first embodiment are provided on the upper side and the lower side of the heat flow control element part 10, a heat flow switching element 31 according to the third embodiment is provided with the thermosensitive element part 11A only on the lower side of the heat flow control element part 10, and provided with a heat flow sensor part 32 capable of detecting the direction of heat flow on the upper side of the heat flow control element part 10, as illustrated in FIGS. 6 and 7.

[0113] That is, the heat flow switching element 31 according to the third embodiment includes the heat flow sensor part 32 joined to the heat flow control element part 10 and capable of detecting the direction of heat flow or/and the heat flux.

[0114] The heat flow sensor part 32 includes a plurality of anomalous Nernst material films 32a and a connection wiring 32b electrically connecting the plurality of anomalous Nernst material films 32a in series. The plurality of anomalous Nernst material films 32a extend in the same direction, are arranged parallel to each other in the planar direction of the heat flow control element part 10, and exhibit an anomalous Nernst effect.

[0115] Each of the ends of the anomalous Nernst material films 32a connected in series is connected to an electrode wiring 32c.

[0116] The connection wiring 32b and the electrode wiring 32c are preferably an Au film having a small electromotive force, but a laminated metal film of a Cr film and an Au film or the like can also be adopted.

[0117] The anomalous Nernst material films 32a are laminated on the heat flow control element part 10.

[0118] That is, the anomalous Nernst material films 32a, the connection wiring 32b, and the electrode wiring 32c are deposited on the upper high thermal conductive part 18 formed on the heat flow control element part 10.

[0119] The plurality of anomalous Nernst material films 32a are formed in a band shape or a line shape arrayed parallel to each other with respect to the direction of the voltage that is generated with respect to the heat flow in the thickness direction.

[0120] Note that the obtained voltage can be increased by increasing the number of anomalous Nernst material films 32a connected in series and/or the length thereof.

[0121] As the anomalous Nernst material films 32a, a ferromagnetic material having large spontaneous magnetization such as an Fe—Al, Fe—Pt, or Co—Pt material or a Heusler alloy material such as Co.sub.2MnGa, Co.sub.2MnAl, or Co.sub.2MnSi, an antiferromagnetic material such as Mn.sub.2Sn, or the like can be adopted.

[0122] In the process of forming the anomalous Nernst material films, the anomalous Nernst material films 32a are deposited by performing sputtering using an Fe—Al alloy sputtering target, for example.

[0123] As described above, in the heat flow switching element 31 according to the third embodiment, because the anomalous Nernst material films 32a are laminated on the heat flow control element part 10, the anomalous Nernst material films 32a are in surface contact with the heat flow control element part 10, which reduces the thermal resistance, enables accurate detection of the direction of heat flow, and contributes to reducing the thickness.

[0124] In particular, because the plurality of anomalous Nernst material films 32a in which a voltage is generated in the direction orthogonal to the direction of heat flow are arranged in the planar direction and electrically connected in series, it is possible to amplify the voltage without increasing the thickness by arranging the anomalous Nernst material films 32a with a large number of wirings.

[0125] Next, the difference between the fourth embodiment and the third embodiment is that whereas only the heat flow sensor part 32 is provided on the heat flow control element part 10 in the third embodiment, a heat flow switching element 41 according to the fourth embodiment is provided with a composite element part 42 having a temperature sensing function and a heat flow measurement function on the heat flow control element part 10, as illustrated in FIGS. 8 and 9.

[0126] That is, in the fourth embodiment, the thin-film thermistor portion 11a and the anomalous Nernst material films 32a are laminated in this order on the upper high thermal conductive part 18 formed on the heat flow control element part 10 to constitute the composite element part 42.

[0127] As described above, in the heat flow switching element 41 according to the fourth embodiment, because the thin-film thermistor portion 11a and the anomalous Nernst material films 32a are laminated on each other, the thin-film thermistor portion 11a and the anomalous Nernst material films 32a are in surface contact with each other, which reduces the thermal resistance, enables accurate temperature detection and accurate detection of the heat flow direction, and contributes to reducing the thickness.

[0128] Note that the thin-film thermistor portion 11a has a higher electric resistance than the anomalous Nernst material films 32a. In particular, when the thin-film thermistor portion is made of a metal nitride thin film represented by the general formula Ti.sub.xAl.sub.yN.sub.z (where 0.70≤y/(x+y)≤0.98, 0.4≤z≤0.5, x+y+z=1), which not only achieves a high B constant and a high thermal conductivity but also has a relatively high insulating property, voltage detection for heat flow detection of the laminated anomalous Nernst material films 32a is unlikely to be affected by the conductivity of the thin-film thermistor portion 11a.

[0129] Note that the technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the gist of the present invention.

[0130] For example, it is preferable to adopt a thermosensitive element part including a thin-film thermistor portion in order to lower the thermal resistance, but a thermosensitive element part including a thermocouple, a temperature measuring resistor, a chip thermistor, or the like may be adopted. As the thin-film thermistor portion, various metal oxide materials and various metal nitride materials can be adopted.

REFERENCE SIGNS LIST

[0131] 1, 21, 31, 41 heat flow switching element [0132] 2 lower high thermal conductive part (base material) [0133] 3 N-type semiconductor layer [0134] 4 insulator layer [0135] 5 P-type semiconductor layer [0136] 6 N-side electrode [0137] 7 P-side electrode [0138] 10 heat flow control element part [0139] 11A, 11B thermosensitive element part [0140] 11a thin-film thermistor portion [0141] 11b counter electrode [0142] 18 upper high thermal conductive part [0143] 19 outer-peripheral heat insulating part [0144] 32 heat flow sensor part [0145] 32a anomalous Nernst material film [0146] 32b connection wiring