OPTOELECTRONIC COMPONENT

Abstract

An optoelectronic component is specified comprising: at least one radiation-emitting semiconductor chip (1) which during operation emits electromagnetic radiation of a first wavelength range, and an absorber, wherein the absorber is predominantly transmissive to the emitted electromagnetic radiation of the first wavelength range, and the absorber absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of the visible light of the ambient light.

Claims

1. Optoelectronic component with at least one radiation-emitting semiconductor chip which, in operation, emits electromagnetic radiation of a first wavelength range, and an absorber, wherein the absorber is predominantly transmissive to the emitted electromagnetic radiation of the first wavelength range, and the absorber under illumination with ambient light absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of the visible light of the ambient light, the absorber comprises an absorbing material and a matrix material, the absorbing material comprises a ligand comprising a porphyrin derivative, and the porphyrin derivative comprises the general formula ##STR00004## wherein R is independently selected from the group consisting of substituted and unsubstituted aryl substituents, substituted and unsubstituted alkyl substituents, substituted and unsubstituted alkenyl substituents, substituted and unsubstituted cycloalkyl substituents, substituted and unsubstituted heterocycloalkyl substituents, substituted and unsubstituted heteroaryl substituents, hydrogen, and combinations thereof, or wherein between two adjacent —CR.sub.2—CR.sub.2— the C-atoms are unsaturated.

2. Optoelectronic component according to claim 1, in which the absorber absorbs at most 50% of the emitted electromagnetic radiation of the first wavelength range of the semiconductor chip.

3. Optoelectronic component according to claim 1, in which the absorber absorbs at most 25% of the emitted electromagnetic radiation of the first wavelength range of the semiconductor chip.

4. Optoelectronic component according to claim 1, in which the optoelectronic component comprises three semiconductor chips which, in operation, emit electromagnetic radiation in the first wavelength range, in a second wavelength range, and in a third wavelength range, wherein the absorber is predominantly transmissive to the emitted electromagnetic radiation in the first wavelength range, in the second wavelength range and in the third wavelength range of the semiconductor chips.

5. Optoelectronic component according to claim 1, in which the absorber comprises at least two absorbing materials and the matrix material.

6. Optoelectronic component according to claim 1, in which the absorbing material is or comprises an organic semiconductor.

7. Optoelectronic component according to claim 1, in which the absorbing material is or comprises a Zn complex.

8. Optoelectronic component according to claim 1, in which the optoelectronic component comprises a reflective leadframe.

9. Optoelectronic component according to claim 1, in which the semiconductor chip is embedded in a potting, and the semiconductor chip and the absorber are applied directly adjacent to one another on the leadframe, so that the absorber is arranged between the potting and the leadframe.

10. Optoelectronic component according to claim 1, in which the absorber is introduced into the potting.

11. Optoelectronic component according to claim 1, in which a coating material surrounds the potting and the semiconductor chip, and the absorber is applied on the potting such that the absorber is arranged between the potting and the coating material.

12. Optoelectronic component according to claim 1, in which the absorber is applied on the potting.

13. Optoelectronic component according to claim 1, in which the absorber covers the semiconductor chip at least in places.

14. Optoelectronic component according to claim 1, in which the absorbing material comprises a zinc complex.

15. Optoelectronic component according to claim 1, in which the absorbing material comprises the ligand comprising the porphyrin derivative and a zinc ion as the central metal.

16. Optoelectronic component according to claim 1, in which the porphyrin derivative is selected from the group of the following formulae: ##STR00005## wherein X is independently selected from the group consisting of H, F, Br, Cl, I; and R.sub.3 and R.sub.13 are independently selected from the group consisting of substituted and unsubstituted alkyl groups.

Description

[0062] Further advantageous embodiments and further embodiments of the optoelectronic component are apparent from the exemplary embodiments described below in conjunction with the figures.

[0063] It shows:

[0064] FIG. 1 a schematic sectional view of an optoelectronic component according to an exemplary embodiment,

[0065] FIG. 2 a chemical structural formula of a zinc complex,

[0066] FIGS. 3, 4 and 5 absorption spectra of the absorbing material in the wavelength range from 300 to 800 nanometers, each according to an exemplary embodiment,

[0067] FIG. 6 a schematic sectional view of an optoelectronic component in a housing with three semiconductor chips according to an exemplary embodiment,

[0068] FIGS. 7, 8 and 9 each a schematic sectional view of an optoelectronic component with a potting, a leadframe, and a coating material according to an exemplary embodiment.

[0069] Elements that are identical, of the same type or have the same effect are provided with the same reference signs in the figures. The figures and the proportions of the elements shown in the figures with respect to one another are not to be regarded as to scale. Rather, individual elements, in particular layer thicknesses, may be shown exaggeratedly large for better representability and/or better understanding.

[0070] The optoelectronic component 100 according to the exemplary embodiment of FIG. 1 comprises a semiconductor chip 1, which emits electromagnetic radiation of a first wavelength range 5 during operation, and an absorber 2. The absorber 2 is, for example, applied to the semiconductor chip 1 and/or arranged adjacent to the semiconductor chip 1. The absorber 2 comprises at least an absorbing material 3 and a matrix material. The absorbing material 3 is or comprises, for example, a chromophore and/or an organic semiconductor. The matrix material is for example an epoxy, silicone or hybrid material.

[0071] The absorber 2 is predominantly transmissive for the emitted electromagnetic radiation of the first wavelength range 5. With predominantly transmissive is meant that the electromagnetic radiation of the first wavelength range 5 of the semiconductor chip 1 is absorbed to at most 50%. Preferably, the emitted electromagnetic radiation of the first wavelength range 5 of the semiconductor chip 1 is absorbed by the absorber 2 to at most 25%.

[0072] Further, the absorber 2 appears black under illumination with ambient light 6. The ambient light 6 is generated from an electromagnetic spectrum of a plurality of colors which mix to form white light. Ambient light 6 is understood to mean, in particular, sunlight. The absorber 2 absorbs at least 70% of the radiation intensity of the visible light of the ambient light 6. That is, the absorber 2 is adapted to absorb most of the wavelength ranges of the visible light of the ambient light 6 under illumination and to transmit most of the emitted electromagnetic radiation of the first wavelength range 5 of the semiconductor chip 1. Furthermore, the absorber 2 predominantly transmits the wavelength range of the ambient light 6 corresponding to the wavelength range of the semiconductor chip 1.

[0073] The chemical structural formula shown in FIG. 2 shows a zinc complex as absorbing material 3.

[0074] The zinc complex comprises a porphyrin ligand which predominantly transmits selected wavelength ranges by using different substituents. The different substituents are shown solid or dashed. Porphyrin derivatives as ligands are suitable as absorbing material 3 because they comprise a conjugated n-electron system and thus can be arbitrarily tuned by different substituents. If electron-withdrawing substituents, such as phenyl bromide, solid line, are used, then electromagnetic radiation in the first, red wavelength range is predominantly transmissive to the optoelectronic component 100. In addition to zinc metals, other metals can be used which have an influence on the absorption spectrum. Preferably, the absorber comprises at least two absorbing materials.

[0075] FIG. 3 shows exemplarily two absorption spectra of a conventional absorbing material 12 and an absorption spectrum of an absorbing material 3 described herein or an absorber 2 described herein with at least two absorbing materials 3. The absorption spectrum of an optoelectronic component 100 with a conventional absorbing material 12 is shown with a dotted line. The absorption spectrum of the optoelectronic component 100 according to the present invention is shown with a solid line.

[0076] The conventional absorbing material 12 shows almost complete absorption of the wavelength range in visible light from 300 nanometers to 800 nanometers. The absorber 2 of the optoelectronic component 100 preferably comprises at least two different absorbing materials 3. The absorbing materials 3 may comprise an identical backbone, for example a porphyrin derivative, wherein the substituents differ. By using different substituents, the absorption spectrum is adjusted. FIG. 3 shows that in the green, blue and red wavelength range, the absorber 2 is predominantly transmissive.

[0077] FIG. 4 shows two absorption spectra with different absorbing materials 3. The upper FIG. 4 shows a zinc complex as absorbing material 3 and the lower FIG. 4 shows an absorption spectrum with a porphyrin derivative ligand as absorbing material 3. Here, the zinc complex as well as the porphyrin derivative ligand comprise different substituents R. The different substituents R lead to different absorption spectra. The different substituents R lead to different absorption spectra. These are shown in the figures as dotted, solid, dashed, thin or thick lines. It can be seen from FIG. 4 that different absorbing materials 3 show different absorption of electromagnetic radiation of the wavelength range of visible light.

[0078] In FIG. 5, as in FIGS. 3 and 4, the absorption is plotted against the wavelength A. Two absorbing materials 3 were used as absorbers 2. It can be seen that the electromagnetic radiation in the blue, green and red wavelength range is almost completely transmitted. The other wavelength ranges of visible light are mostly absorbed by the absorbing material 3 from the absorber 2 of the optoelectronic component 100.

[0079] The optoelectronic component 100 of FIG. 6 according to an exemplary embodiment comprises three semiconductor chips 1. In operation, the semiconductor chips 1 emit electromagnetic radiation in the first wavelength range 5, in a second wavelength range 13, and in a third wavelength range 14. The semiconductor chip 1 that emits electromagnetic radiation in the first wavelength range 5 is shown with a solid line. The semiconductor chip 1 that emits electromagnetic radiation in the second wavelength range 13 is shown with a dotted line, and the semiconductor chip 1 that emits electromagnetic radiation in the third wavelength range 14 is shown with a thick dashed line. Here, the optoelectronic component 100 is introduced into a housing 8 and the semiconductor chips 1 are embedded side by side in a potting 9. The absorber 2 is located on the potting 9 and/or under the potting 9 and/or in the potting 9. The potting 9 comprises as material, for example, a silicone, epoxy or hybrid material. The potting 9 can comprise the same material as the matrix material of the absorber 2.

[0080] The semiconductor chips 1 are applied on a reflective leadframe 7. With advantage, the irradiated light of the ambient light 6 is mostly absorbed by the absorber 2 and not reflected by the reflective leadframe 7. The absorber 2 is further provided for predominantly transmitting the emitted electromagnetic radiation in the first wavelength range 5, in the second wavelength range 13 and in the third wavelength range 14. Furthermore, the absorber 2 predominantly transmits the wavelength ranges of the ambient light 6 corresponding to the wavelength ranges of the semiconductor chips 1. The emitted electromagnetic radiation of the semiconductor chips 1 is reflected at the radiation exit side 15 in the direction of the leadframe 7, and thus is mostly transmitted or reflected by the absorber 2 and not absorbed by the absorber 2.

[0081] The exemplary embodiment of FIG. 7 shows a housing 8 in which the semiconductor chip 1 is embedded in a potting 9. A coating material 10 is located on the potting 9 and on the semiconductor chip 1. The semiconductor chip 1 is applied on a reflective leadframe 7, which is connected to the semiconductor chip 1 via a bonding wire 11. The absorber 2 is applied on the leadframe 7 directly adjacent to the semiconductor chip 1, so that the absorber 2 is arranged between the potting 9 and the leadframe 7. The absorber 2 is adapted here as a layer.

[0082] The coating material 10 comprises a silicone, an epoxy or a hybrid material and may be different from the potting 9 or from the matrix material of the absorber 2. Furthermore, scattering particles are additionally embedded in the coating material 10, for example. The scattering particles are adapted as nanoparticles and can be selected from the following group: TiO.sub.2, SiO.sub.2, ZrO.sub.2, Al.sub.2O.sub.3, BaTiO.sub.3, SrTiO.sub.3, TCO (transparent conductive oxides), Nb.sub.2O.sub.5, HfO.sub.2, ZnO.

[0083] The exemplary embodiment of FIG. 8 differs from the exemplary embodiment of FIG. 7 in that the absorber 2 is embedded as a particle or layer in the potting 9.

[0084] The exemplary embodiment of FIG. 9 differs from the exemplary embodiments of FIG. 8 and FIG. 7 in that the absorber 2 is applied to the potting 9 so that the absorber 2 is arranged between the potting 9 and the coating material 10. The absorber 2 may here cover the semiconductor chip 1 at least in places.

[0085] The features and exemplary embodiments described in connection with the figures may be combined with each other in accordance with further exemplary embodiments, even though not all combinations are explicitly described. Furthermore, the exemplary embodiments described in connection with the figures may alternatively or additionally comprise further features according to the description in the general part.

[0086] The invention is not limited to the exemplary embodiments by the description based thereon. Rather, the invention encompasses any new feature as well as any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly specified in the patent claims or exemplary embodiments.

[0087] This patent application claims priority to German patent application 10 2019 118 793.1, the disclosure content of which is hereby incorporated by reference.

LIST OF REFERENCE SIGNS

[0088] 100 optoelectronic component [0089] 1 semiconductor chip [0090] 2 absorber [0091] 3 absorbing material [0092] 5 first wavelength range [0093] 6 ambient light [0094] 7 leadframe [0095] 8 housing [0096] 9 potting [0097] 10 coating material [0098] 11 bonding wire [0099] 12 common absorbing material [0100] 13 second wavelength range [0101] 14 third wavelength range [0102] 15 radiation exit side