METHOD AND DEVICE FOR PICKING UP AND DEPOSITING OPTOELECTRONIC SEMICONDUCTOR CHIPS
20220319882 ยท 2022-10-06
Inventors
Cpc classification
H01L2924/00014
ELECTRICITY
H01L2224/2919
ELECTRICITY
H01L2221/68363
ELECTRICITY
H01L2224/291
ELECTRICITY
B65G47/92
PERFORMING OPERATIONS; TRANSPORTING
H01L2224/2919
ELECTRICITY
H01L2224/291
ELECTRICITY
H01L33/0095
ELECTRICITY
H01L21/67144
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/83192
ELECTRICITY
H01L2224/95136
ELECTRICITY
International classification
H01L21/67
ELECTRICITY
Abstract
A method of picking up and depositing optoelectronic semiconductor chips comprises generating electron-hole pairs in optoelectronic semiconductor chips, thereby generating a dipole electric field in the vicinity of the respective optoelectronic semiconductor chip, generating an electric field by a pick-up tool, and picking up the optoelectronic semiconductor chips during or after generation of the electron-hole pairs by the pick-up tool and depositing them at predetermined locations.
Claims
1. A method for picking up and depositing optoelectronic semiconductor chips, comprising: wherein electron-hole pairs are generated in optoelectronic semiconductor chips, and thereby an electric dipole field is generated in the vicinity of the respective optoelectronic semiconductor chip; wherein a pick-up tool generates an electric field; and wherein the optoelectronic semiconductor chips are picked up by the pick-up tool during or after the generation of the electron-hole pairs and deposited at predetermined positions.
2. The method according to claim 1, wherein the optoelectronic semiconductor chips are LEDs.
3. The method according to claim 1, wherein the optoelectronic semiconductor chips are irradiated with light having a predetermined wavelength or range of wavelengths to generate the electron-hole pairs.
4. The method according to claim 3, wherein the light for generating the electron-hole pairs is incident on the optoelectronic semiconductor chips through the pick-up tool.
5. The method according to claim 3, wherein the optoelectronic semiconductor chips are arranged on a carrier and the light for generating the electron-hole pairs is incident on the optoelectronic semiconductor chips through the carrier.
6. The method according to claim 1, wherein a plurality of optoelectronic semiconductor chips are provided and the electric dipole fields are generated only in selected optoelectronic semiconductor chips of the plurality of optoelectronic semiconductor chips.
7. The method according to claim 1, wherein the pick-up tool generates an electric field only in predetermined areas.
8. The method according to claim 1, wherein the pick-up tool comprises a plurality of protrusions on a surface facing the optoelectronic semiconductor chips and the optoelectronic semiconductor chips are picked up by the protrusions of the pick-up tool.
9. The method according to claim 1, wherein at least a region of a surface of the pick-up tool facing the optoelectronic semiconductor chips is flat and the optoelectronic semiconductor chips are picked up with the flat region of the pick-up tool.
10. The method according to claim 1, wherein the pick-up tool is in the form of a cylinder that is rolled over the optoelectronic semiconductor chips to pick up the optoelectronic semiconductor chips.
11. The method according to claim 1, wherein for depositing the optoelectronic semiconductor chips the electric field generated by the pick-up tool is changed.
12. The method according to claim 1, wherein the pick-up tool for picking up the optoelectronic semiconductor chips directly contacts and holds the optoelectronic semiconductor chips by means of Van der Waals forces.
13. An apparatus for picking up and depositing optoelectronic semiconductor chips, comprising: an excitation element for generating electron-hole pairs in optoelectronic semiconductor chips to produce an electric dipole field in the vicinity of the respective optoelectronic semiconductor chip; and a pick-up tool for picking up and depositing the optoelectronic semiconductor chips, the pick-up tool configured to generate an electric field, then pick up the optoelectronic semiconductor chips with the electron-hole pairs generated by the excitation element and deposit the optoelectronic semiconductor chips at predetermined locations.
14. The apparatus according to claim 13, wherein the excitation element is configured to generate light having a predetermined wavelength or range of wavelengths for generating the electron-hole pairs in the semiconductor optoelectronic chips.
15. The apparatus according to claim 14, wherein the excitation element is arranged such that the light for generating the electron-hole pairs is incident on the optoelectronic semiconductor chips through the pick-up tool or through a carrier on which the optoelectronic semiconductor chips are arranged.
16. The apparatus according to claim 13, wherein the pick-up tool comprises a plurality of protrusions on a surface facing the optoelectronic semiconductor chips and the optoelectronic semiconductor chips are picked up by the protrusions of the pick-up tool.
17. The apparatus according to claim 13, wherein at least a region of a surface of the pick-up tool facing the optoelectronic semiconductor chips is planar and the optoelectronic semiconductor chips are picked up with the planar region of the pick-up tool.
18. The apparatus according to claim 13, wherein the receiving tool is in the form of a cylinder which is rolled over the optoelectronic semiconductor chips to receive the optoelectronic semiconductor chips.
Description
[0055] In the following, embodiments of the invention will be explained in more detail with reference to the accompanying drawings. In these schematically show:
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[0064] In the following detailed description, reference is made to the accompanying drawings, which form a part of this description and in which are shown, for illustrative purposes, specific embodiments in which the invention may be practiced. Since components of embodiments may be positioned in a number of different orientations, the directional terminology is for illustrative purposes and is not limiting in any way. It is understood that other embodiments may be used and structural or logical changes may be made without departing from the scope of protection. It is understood that the features of the various embodiments described herein may be combined, unless specifically indicated otherwise. Therefore, the following detailed description is not to be construed in a limiting sense. In the figures, identical or similar elements are provided with identical reference signs where appropriate.
[0065]
[0066] In the present embodiment, the optoelectronic semiconductor chips are formed as LEDs 11 and are spaced apart from each other on a carrier 12.
[0067] The apparatus 10 comprises a pick-up tool 13, an excitation element 14, and a voltage source 15.
[0068] The excitation element 14 emits light 16 with which the LEDs 11 are irradiated. The light 16 emitted by the excitation element 14 includes wavelengths that generate electron-hole pairs in the optically active region of the LEDs 11 by excitation. The electron-hole pairs cause electrostatic polarization within the LEDs 11, thereby generating an electric dipole field in the vicinity of the respective LED 11.
[0069] In the present embodiment, the pick-up tool 13 is arranged between the excitation element 14 and the LEDs 11. The pick-up tool 13 is at least partially transparent to the light 16 emitted by the excitation element 14, so that the light 16 can reach the LEDs 11.
[0070] The pick-up tool 13 comprises metal contacts embedded, for example, in polydimethylsiloxane (PDMS for short) or other suitable material. The metal contacts are connected to the voltage source 15. An electrostatic field can be generated via a voltage across the metal contacts.
[0071] Further, the pick-up tool 13 comprises protrusions 17 extending from a surface on the underside of the pick-up tool 13 toward the LEDs 11.
[0072] With reference to
[0073] The light 16 emitted from the excitation element 14 causes excitation and a resulting electrostatic polarization in the LEDs 11. At the same time, the pick-up tool 13 is charged by means of the voltage source 15 in such a way as to cause an attractive interaction between the pick-up tool 13 and the LEDs 11.
[0074] The pick-up tool 13 is moved down toward the LEDs 11 until the protrusions 17 are in contact with the LEDs 11 below. In the present embodiment, every other LED 11 is in contact with one of the protrusions 17.
[0075] As
[0076] LEDs 11 located between the protrusions 13 are not lifted by the pick-up tool 13. Further, LEDs 11 in which the light 16 emitted from the excitation element 14 causes little or no polarization due to defects in the LEDs 11 are not lifted. These LEDs 11 are shown with a dark background in
[0077] Subsequently, as shown in
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[0080] As shown in
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[0082] To allow the passage of the light 16, the receiving tool 13 may be made of a material that is at least partially transparent to the light 16, or appropriate passage openings or light guides may be incorporated into the receiving tool 13.
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[0085] Furthermore, shading elements, for example a mask, may be provided to selectively excite only certain LEDs 11 to photoluminescence.
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[0087] By means of the voltage source 15 shown in
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[0089] In the embodiment shown in
[0090] In
[0091] In
[0092] The electric fields generated by means of the pick-up tool 13 should not be homogeneous in order to exert an effective force on the dipoles of the LEDs 11 so that they can be picked up by the support 12.
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LIST OF REFERENCE SIGNS
[0094] 10 Apparatus [0095] 11 LED [0096] 12 Carrier [0097] 13 Pick-up tool [0098] 14 Excitation element [0099] 15 Voltage source [0100] 16 Light [0101] 17 Survey [0102] 20 Apparatus [0103] 21 Surface [0104] 22 Board [0105] 23 Field line of the pick-up tool [0106] 24 Field line of the semiconductor chip