COMPOSITE OF A SUBSTRATE WITH A STRUCTURED COATING, CUTTING ELEMENT AND METHOD FOR PRODUCING A CUTTING ELEMENT
20260070131 · 2026-03-12
Inventors
- Peter Bodo Gluche (Bellenberg, DE)
- Michael Mertens (Vöhringen/Illerberg, DE)
- Ralph Gretzschel (Neu-Ulm, DE)
Cpc classification
C23C20/00
CHEMISTRY; METALLURGY
International classification
B23B27/14
PERFORMING OPERATIONS; TRANSPORTING
Abstract
The present invention relates to a cutting element formed from a composite of a substrate coated with a structured coating comprising a substrate with a surface in contact with the coating. The substrate has a plurality of substrate recesses at least in regions of the substrate surface. The coating extends into the recesses of the substrate, and the coating has an inner surface being in contact with the substrate and an outer surface opposite to the inner surface. The coating comprises at the outer surface a plurality of coating recesses being smaller than the recesses at the surface of the substrate resulting in a structured coating. Moreover, the present invention relates to a method for producing a cutting element.
Claims
1. A cutting element formed from a composite of a substrate with a structured coating, the cutting element comprising of a substrate with a surface in contact with a coating, wherein the substrate has a plurality of substrate recesses at least in regions of the substrate surface and the coating extends into the recesses of the substrate, and the coating has an inner surface being in contact with the substrate and a surface opposite to the inner surface, and the coating comprises at the surface a plurality of coating recesses being smaller than the recesses at the surface of the substrate resulting in a structured coating, wherein the surface of the structured coating has a total surface area A.sub.tot, a total recess area A.sub.r and a contact area A.sub.c=A.sub.totA.sub.r wherein Ac/A.sub.tot is in the range of 0.1 to 0.8.
2. The cutting element of claim 1, wherein the cutting element is characterized in that at least in regions of the composite the substrate is removed thereby exposing one or more protrusions, which preferably have the inverse shape of the recesses at the surface of the substrate.
3. The cutting element of any one of claims 1, wherein the substrate recesses have a width w.sub.sub in a range of 100 nm to 100 m, wherein the ratio w.sub.sub/d.sub.base is in the range from 0.20 to 25, and/or the coating recesses have a width w.sub.coat in a range of 100 nm to 100 m, preferably from 500 nm to 20 m, and a depth d.sub.coat, in a range 50 nm to 5 m, preferably from 100 nm to 2 m, wherein the ratio w.sub.coat/d.sub.coat is in the range from 0.25 to 25.
4. The cutting element of claim 3, wherein the cutting element is characterized in that d.sub.coat is smaller than d.sub.base.
5. The cutting element of claim 1, wherein the cutting element is characterized in that A.sub.c/A.sub.tot is in a range of 0.3 to 0.7.
6. The cutting element of claim 1, wherein the cutting element is characterized in that the substrate recesses are arranged such that the ratio s/d.sub.pair of the spacing s of any pair of two adjacent recesses to the average depth d.sub.pair of the same pair of two recesses is in the range from 0.25 to 20.
7. The cutting element of 1, wherein the cutting element is characterized in that the coating is a first coating deposited on the substrate at least in regions and on the first coating at least one further coating is deposited at least in regions.
8. The cutting element of claim 1, wherein the recesses have a circular or ellipsoidal or linear shape, wherein the recess has a recess opening perimeter which is a closed continuous line without any singularities.
9. The cutting element of claim 1, wherein the coating has a thickness T.sub.c of 100 nm to 50 m, and the substrate has a thickness T.sub.s of 20 to 2000 m and the composite has a total thickness T.sub.tot of 25 to 2050 m.
10. The cutting element of claim 1, wherein the ratio d.sub.base /T.sub.c of the depth d.sub.base of the substrate recesses to the thickness of the coating T.sub.c is in a range of 0.01 to 15 and the ratio d.sub.coat /T.sub.c of the depth d.sub.coat of the coating recesses to the thickness of the coating T.sub.c is in a range of 0.01 to 5.
11. The cutting element of claim 1, wherein the cutting element is selected from the group consisting of a knife blade, razor blade, scalpel, knife, machine knife in slitting- , burst- and crash cutting systems, scissors or shear cutting systems.
12. The cutting element of claim 11, wherein the regions of the composite in which the substrate is removed thereby exposing protrusions being the inverse structure of the recesses is the region of the cutting bevel.
13. The cutting element of claim 11, wherein the cutting element comprises a cutting bevel and a cutting element body whereby the cutting bevel is at least partially located in regions of the composite where the substrate is removed thereby exposing protrusions at the inner coating surface.
14. A method for producing a cutting element with the steps of: Providing a substrate with a surface, forming an etching mask with openings at the substrate surface, etching the substrate through the openings in the etching mask to form a plurality of substrate recesses at the substrate surface by reactive ion etching or wet chemical etching, removing the etching mask from the substrate, depositing a coating onto the substrate surface and into the plurality of recesses thereby transferring the substrate recesses into coating recesses at the coating surface which are smaller than the substrate recesses resulting in the structured coating, etching the substrate thereby exposing protrusions at the inner coating surface to form a cutting bevel of the cutting element.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0085] The present invention is further illustrated by the following figures and examples which show specific embodiments according to the present invention. However, these specific embodiments shall not be interpreted in any limiting way with respect to the present invention as described in the claims in the general part of the specification.
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REFERENCE SIGN LIST
[0099] 10 composite [0100] 110 interface [0101] 20 substrate (material) [0102] 200 substrate surface [0103] 205 substrate backside surface [0104] 210 photoresist [0105] 220 exposed photoresist regions [0106] 230 unprotected regions [0107] 240 region with recesses [0108] 250 region without recesses [0109] 30 coating (layer) [0110] 300 coating surface [0111] 305 coating inner surface [0112] 320 protrusion [0113] 330 coating recess [0114] 40, 40, 40, 40 recesses [0115] 410 recess opening [0116] 415 side wall [0117] 420 recess base [0118] 460 recess opening perimeter [0119] 462 recess maximum perimeter [0120] 470 largest inner circle [0121] 472 recess center [0122] 480 undercut [0123] 600 cutting element [0124] 610 cutting edge [0125] 620 cutting bevel [0126] 630 cutting element body
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[0129] As can be seen from the enlargement of the side wall 415 on
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[0133] As can be seen from the magnification of a sidewall 415 of a recess 40, an opening perimeter 460 is located around the opening of recesses 40. Furthermore, each recess 40 has a maximum perimeter 462 at a maximum depth d.sub.max below the surface 200. The largest inner circle that can be fully fitted into the opening perimeter 460 defines the surface width w.sub.sub and the largest inner circle that can be fully fitted into the maximum perimeter 462 defines the maximum width w.sub.max. The difference of w.sub.max minus w.sub.sub corresponds to the twice the width of the overhang h. The depth d.sub.max is greater than zero but less or equal than the depth d.sub.base of the recess 40, meaning that the maximum perimeter 462 and hence maximum width w.sub.max is located below the surface 200 of the substrate 20 to form and undercut 480. Adjacent recesses 40 are separated by a spacing s.
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[0138] As can be seen in
[0139] As can be seen in
[0140] The largest inner circle that fully fits into the opening perimeter 460 defines the surface width w.sub.sub and the largest inner circle that fully fits into the maximum perimeter 462 defines the maximum width w.sub.max. The difference of w.sub.max minus w.sub.sub corresponds to the twice the width of the overhang h.
[0141] To form an undercut 480, the sidewall 415 of recess 40 can have any shape if a depth d.sub.max exists at which the width w.sub.max of the recess is greater than the width w.sub.sub at the opening of the recess, i.e., an overhang h exists that is greater than zero.
EXAMPLE
[0142] The inventive process for producing a composite of a substrate with a structured coating is shown in the diagram of
[0143] Process step a) shows the starting point, providing a single crystal silicon wafer as the substrate.
[0144] After cleaning the substrate surface 200 carefully in step b) a photoresist 210 providing a reasonable selectivity against the reactant etch gas composition is deposited by spin coating or spraying to achieve a reasonable thickness (e.g., 1 to 2 m) and homogeneity. To obtain a reasonable resolution and selectivity, standard photoresists for semiconductor fabrication are recommended.
[0145] The photoresist is dried/prebaked according to the recommended parameters provided by the photoresist manufacturer. To pattern the photoresist, a photolithographic mask and an UV Exposure apparatus are needed. The photoresist is exposed through the photoresist mask and the exposed photoresist regions 220 are developed according to the recommended parameters provided by the photoresist manufacturer.
[0146] After development, a post bake may be recommended to increase the selectivity of the following etching process. Processing of the photoresist is schematically shown in process steps b).
[0147] The recesses 40 are formed by isotropic etching of the unprotected regions 230 on the substrate, utilizing the photoresist 210 as mask with sufficient stability against the reactants. If a small recess depth is required, it is advantageous to utilize dry etching processes such as (D)RIE or ICP. In case of a silicon substrate, advantage can be taken from DRIE adapted processes, alternating side wall passivation and isotropic etching steps. Details can be found e.g., in M.D. Henry, ICP Etching of silicon for micro and nanoscale devices, Thesis California Institute of Technology, May 19, 2010. Such steps allow for a precise control of a desired shape of the sidewall 415 and an undercut 480. This process is shown in process step c).
[0148] After recess 40 formation, the photoresist 210 is removed utilizing the recommended solutions by the photoresist manufacturer, shown in process step d).
[0149] A coating process is performed using a planar silicon substrate (e.g., wafer) coated with a 10 m thick nanocrystalline diamond CVD film. As the diamond growth or deposition, respectively, does not spontaneous start on a clean silicon surface, a nucleation step (not shown) must be performed in advance. Here, a water-based nucleation slurry containing purified diamond particles (seeds) are used. The size of the seeds should be much smaller than the recess depth d.sub.base to enable a high nucleation density. The nucleation process is performed by dipping the Silicon wafer into the slurry and followed by a water-based rinsing and a drying step.
[0150] After nucleation, the wafer is placed e.g., in a hot filament CVD system and the growth process is started. The hot filament CVD growth of diamond is known to be rather isotropic as no ion bombardment is involved. Thus, the recessed silicon surface is overgrown or covered, respectively, and the residual diamond growth surface smoothens out with increasing diamond film thickness as seen in the cross-sectional SEM pictures of
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[0154] The initial stage a) in
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