Method for chemical vapor deposition of synthetic diamond using multiple hot filament units
11618683 · 2023-04-04
Assignee
Inventors
Cpc classification
C23C16/46
CHEMISTRY; METALLURGY
International classification
Abstract
A method for synthesizing a diamond by chemical vapor deposition, the method may include heating at least one internal space of at least one hot filament unit; wherein the at least one hot filament unit is positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber; feeding at least one gas to the at least one internal space; wherein the at least one gas comprises at least a carbon carrier gas; breaking the at least one gas by the at least one hot filament unit, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond.
Claims
1. A method for synthesizing a diamond by chemical vapor deposition, the method comprises: heating at least one internal space of multiple hot filament units; wherein the multiple hot filament units are positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber; wherein a hot filament unit of the multiple hot filament units is thermally isolated from at least one other hot filament unit of the multiple hot filament units; feeding a plurality of gases to the at least one internal space; wherein the plurality of gases comprise a carbon carrier gas; breaking the plurality of gases by the multiple hot filament units, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond.
2. The method according to claim 1, wherein the carbon carrier gas is methane and the plurality of gasess also comprise H2.
3. The method according to claim 1, wherein the breaking of the plurality of gases is executed while the plurality of gases are within the at least one internal space.
4. The method according to claim 1, wherein the at least one internal space is partially thermally isolated from the substrate.
5. The method according to claim 1, comprising feeding different gases of the plurality of gases to different hot filament units of the multiple hot filament units.
6. The method according to claim 1, comprising independently heating internal spaces of at least two hot filament units of the multiple hot filament units.
7. The method according to claim 1, comprising independently feeding gases of the plurality of gases to at least two hot filament units of the multiple hot filament units.
8. The method according to claim 1, wherein the multiple hot filament units comprise multiple capillary tubes.
9. The method according to claim 1, wherein the multiple hot filament units comprise multiple internal spaces; and wherein the method comprises controlling a flow of the plurality of gases within the at least one internal space using one or more flow controllers.
10. The method according to claim 9 wherein the one or more flow controller are configured to be at least partially positioned at a certain position in which the one or more flow controllers are within the one or more internal spaces.
11. The method according to claim 1, wherein the multiple hot filament units comprise multiple internal spaces.
12. The method according to claim 11 comprising independently heating at least two of the multiple internal spaces.
13. The method according to claim 11 comprising heating the multiple internal spaces by a group of heating elements.
14. The method according to claim 13 wherein there are more internal spaces than heating elements of the group.
15. The method according to claim 1, comprising heating at least one area of the substrate.
16. The method according to claim 1, comprising selectively heating some points of the substrate while preventing from directly heating other points of the substrate.
17. The method according to claim 1, comprising heating by radiation some points of the substrate.
18. The method according to claim 1 wherein the heating of at least one internal space of at least one hot filament unit comprises utilizing an external heating element located outside at least one internal space.
19. The method according to claim 1 a ratio between (a) the volume of the vacuum chamber and (b) a volume of one of the at least one internal space ranges between five and one hundred.
20. A method for synthesizing a diamond by chemical vapor deposition, the method comprises: heating internal spaces of multiple hot filament units; wherein the multiple hot filament units are positioned in a vacuum chamber; wherein a volume of each internal space out of the internal spaces is smaller than one half of a volume of the vacuum chamber; feeding a plurality of gases to the internal spaces; wherein the plurality of gases comprise a carbon carrier gas; breaking the plurality of gases by the multiple hot filament units, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond; wherein a hot filament unit of the multiple hot filament units and another hot filament unit of the multiple hot filament units are coaxial.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The subject matter regarded as the invention is particularly pointed out and distinctly claimed in the concluding portion of the specification. The invention, however, both as to organization and method of operation, together with objects, features, and advantages thereof, may best be understood by reference to the following detailed description when read with the accompanying drawings in which:
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DETAILED DESCRIPTION OF THE DRAWINGS
(20) In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, and components have not been described in detail so as not to obscure the present invention.
(21) It will be appreciated that for simplicity and clarity of illustration, elements shown in the figures have not necessarily been drawn to scale. For example, the dimensions of some of the elements may be exaggerated relative to other elements for clarity. Further, where considered appropriate, reference numerals may be repeated among the figures to indicate corresponding or analogous elements.
(22) Any reference in the specification to a system should be applied mutatis mutandis to a method that can be executed by the system.
(23) The phrase “and/or” means additionally or alternatively.
(24) Because the illustrated embodiments of the present invention may for the most part, be implemented using electronic components and circuits known to those skilled in the art, details will not be explained in any greater extent than that considered necessary as illustrated above, for the understanding and appreciation of the underlying concepts of the present invention and in order not to obfuscate or distract from the teachings of the present invention.
(25) Any reference in the specification to a method should be applied mutatis mutandis to a system capable of executing the method.
(26) There is provided a system that may include one or more hot filament units.
(27) The one or more hot filaments units may be stationary, and/or may be moved in relation to the vacuum chamber, may be held within the vacuum chamber in nay known manner—by rams, frames, or any other structural elements.
(28) A hot filament unit is compact and may include multiple mini-chambers for treating different gases.
(29) The number of mini-chambers may be equal to the number of different input gases—but this is not necessarily so. More than two gases may be provided to a single mini-chamber and/or a certain gas may be fed to multiple mini-chambers.
(30) Radicals that are outputted from the mini-chambers may be mixed before contacting the substrate. The system may include a mixer for mixing the radicals. Alternatively, the different radicals may be directed to the same space without using a mixer. Any system or unit for directing the radicals towards the substrate and/or the diamond may be provided.
(31) The temperature within one mini-chamber may be set independently from the temperature within another mini-chamber.
(32) A first mini-chamber may receive H.sub.2, may be heated to about 2000 degree Celsius, and output H*. A second mini-chamber may receive CH.sub.4 may be heated to about 600 degrees Celsius, and output CH.sub.3*.
(33) One or more mini-chambers may be thermally isolated from each other.
(34) One or more mini-chambers may be thermally coupled to each other. The thermal coupling may allow one mini-chamber to benefit from the heating of another mini-chamber—and may be reduce the energy consumption of the system.
(35) A heating of a mini-chamber may be achieved by any know heating technique including but not limited to Ohmic heating.
(36) Mini-chambers may have the same volume and/or shape and/or size and/or orientation.
(37) Mini-chambers may differ from each other by volume and/or shape and/or size and/or orientation.
(38) A mini-chamber may be shaped and sized in any manner.
(39) A mini-chamber may be shaped and sized to define an inner space that has any desired contact area to volume ratio. It has been found that larger contact area to volume ratios yield more efficient gas breaking techniques.
(40) The inner walls of the mini-chambers may be smooth, curved and/or non-smooth. Non-smooth inner walls may increase the contact area to volume ratio.
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(43) The mini-chambers may be at least partially thermally isolated from the substrate and thus may be positioned much closer to the substrate.
(44) The at least partial isolation may be achieved by using thermal isolators (such as ceramic elements) at the exterior of the min-chambers and by having relatively small apertures (for example millimetric scale apertures) for exiting the radicals.
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(46) Furthermore—heating smaller volumes (heating small internal volumes of mini-chambers instead of heating much larger volumes in
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(48) Mini-chambers for breaking other gases may be used. Both mini-chambers are coaxial.
(49) The radius of the capillary tube may be of any dimension—for example may range between 0.5 and 5 centimeters. The height of the capillary tube may be of any dimension—for example may range between 10 and 1000 centimeters.
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(52) The second mini-chamber 30 includes inputs 31 and 32, a second internal space 33 that is defined between various external structural elements (38, 35, 36, 37) and various internal structural elements (38, 39, 40 and 44).
(53) The internal elements and/or the external structural elements may define the internal space 33—and may (or may not) have an additional function. For example, external ceramic tube 36 and internal ceramic tube 40 at least partially thermally insolate internal space 33 from its environment. Yet for another example—some of the internal and/or external structural elements conduct electrical signals, and the like. Internal space 33 end at output 41.
(54) The second internal space 33 may be heated by the capillary tube 52, and/or may have its own heating element (not shown).
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(56) The first intermediate conductive element 46 and the second intermediate conductive element 48 may be formed on the sidewall of second internal space 33—or formed in any manner that does not prevent the passage of gas through the second internal space 33.
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(65) The radiation based heating may involve directing multiple heating beams towards the substrate at the same time, at different points of time, in a continuous manner, in a non-continuous manner, to the same location, to different locations, and the like.
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(67) Non-limiting examples of dimensions—diameter of interior of a capillary tube may range between 0.05 mm and 10 mm; aspect ratio (inner diameter to length of capillary tube smaller than 1:5, distance between bottom of mini-chamber (hot filament unit) between 1 and 50 millimeter; and increasing of ratio of a heating surface in capillary tube to a gas volume to be radicalized versus conventional hot filament—being a number of orders of magnitude.
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(69) The mini-chambers may be controlled independently from each other.
(70) For example, at least one of the following may be fulfilled: a. The temperatures of the mini-chambers may be set independently from each other. b. The flow of gas to the different mini-chambers may be independently controlled-by a distribution system.
(71) Using multiple hot filament units—and independently controlling the hot filament units provides a selective synthetic diamond printer.
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(73) The movement system (denoted 65 or 66) may move the substrate (
(74) The movement system may perform any movement—linear, non-linear, spiral, rotational, along any axes,—for example may perform a z-axis movement to determine the distance between the substrate and the hot filament unit(s).
(75) The substrate may be heated to a desired temperature (for example 800 degrees) in order to facilitate the growth of the synthetic diamond.
(76) According to an embodiment of the invention—instead of heating the entire substrate to the desired temperature—only selected parts of the substrate may be heated to the desired temperature—thus facilitating a selective synthetic diamond printing process.
(77) The selective heating may be performed by at least one of the following: a. Heating, by heating elements, only parts of the substrate to the desired temperature. The heating elements may be arranged in any manner. The heating elements may be included in the support unit and/or may be positioned above the support unit. b. Heating the substrate to an intermediate temperature that is lower than the predefined temperature—and selectively heating selected parts of the substrate using other heating methods—such a radiation based heating. For example—using laser beams and/or charged particle beams may provide printing with nanometric scale and/or micron scale resolution. For example—the substrate may be heated to an intermediate temperature that is 10-250 degrees Celsius below the predefined temperature. For example—600 degrees Celsius versus 800 degrees Celsius.
(78) Radiation based heating may involve passing the heating beam through a mini-chamber, between mini-chambers, through a hot filament unit, between hot filament units, outside hot-filament units, and the like. See, for example—
(79) The described systems may exhibit at least some of the following: a. high efficiency of gas radicalization resulting in high grows rate of the synthetic diamond. b. Higher level of vacuum environment resulting in longer free path of radicals. c. Independence of hot filament temperature and substrate temperature. d. Independent supply of H2 and CH4 or other Hydrocarbon gas eliminating HF material carbonization and resulting HF life prolongation. e. Controllable distribution of different gases. f. Selective printing.
(80) There may be provided a method for manufacturing synthetic diamonds by using any of the mentioned above systems, mini-chambers, and/or hot filament units.
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(82) Method 200 may include:
(83) Step 210 of heating at least one internal space of at least one hot filament unit; wherein the at least one hot filament unit is positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber.
(84) Step 220 of feeding at least one gas to the at least one internal space; wherein the at least one gas comprises at least a carbon carrier gas.
(85) Step 230 of breaking the at least one gas by the at least one hot filament unit, to provide at least one radical; and
(86) Step 240 of depositing the at least one radical on an area of a substrate to provide the diamond.
(87) Step 240 may include directing (passively or actively) the radicals towards the substrate—especially towards the diamond that is being formed on the substrate.
(88) The system and method may be applied to manufacturing objects that differs from synthetic diamonds.
(89) In the foregoing specification, the invention has been described with reference to specific examples of embodiments of the invention. It will, however, be evident that various modifications and changes may be made therein without departing from the broader spirit and scope of the invention as set forth in the appended claims.
(90) Those skilled in the art will recognize that the boundaries between logic blocks are merely illustrative and that alternative embodiments may merge logic blocks or circuit elements or impose an alternate decomposition of functionality upon various logic blocks or circuit elements. Thus, it is to be understood that the architectures depicted herein are merely exemplary, and that in fact many other architectures can be implemented which achieve the same functionality.
(91) Any arrangement of components to achieve the same functionality is effectively “associated” such that the desired functionality is achieved. Hence, any two components herein combined to achieve a particular functionality can be seen as “associated with” each other such that the desired functionality is achieved, irrespective of architectures or intermedial components. Likewise, any two components so associated can also be viewed as being “operably connected,” or “operably coupled,” to each other to achieve the desired functionality.
(92) Furthermore, those skilled in the art will recognize that boundaries between the above described operations merely illustrative. The multiple operations may be combined into a single operation, a single operation may be distributed in additional operations and operations may be executed at least partially overlapping in time. Moreover, alternative embodiments may include multiple instances of a particular operation, and the order of operations may be altered in various other embodiments.
(93) However, other modifications, variations and alternatives are also possible. The specifications and drawings are, accordingly, to be regarded in an illustrative rather than in a restrictive sense.
(94) In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word ‘comprising’ does not exclude the presence of other elements or steps then those listed in a claim. Furthermore, the terms “a” or “an,” as used herein, are defined as one or more than one. Also, the use of introductory phrases such as “at least one” and “one or more” in the claims should not be construed to imply that the introduction of another claim element by the indefinite articles “a” or “an” limits any particular claim containing such introduced claim element to inventions containing only one such element, even when the same claim includes the introductory phrases “one or more” or “at least one” and indefinite articles such as “a” or “an.” The same holds true for the use of definite articles. Unless stated otherwise, terms such as “first” and “second” are used to arbitrarily distinguish between the elements such terms describe. Thus, these terms are not necessarily intended to indicate temporal or other prioritization of such elements the mere fact that certain measures are recited in mutually different claims does not indicate that a combination of these measures cannot be used to advantage.
(95) The terms having, comprising, consisting, consisting essentially of are used in an interchangeable manner. Any system illustrates above may include more that the described components or units and/or almost only the described components or units or only the described components or units.
(96) While certain features of the invention have been illustrated and described herein, many modifications, substitutions, changes, and equivalents will now occur to those of ordinary skill in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.