METHOD FOR THE DETECTION AND CORRECTION OF LENS DISTORTIONS IN AN ELECTRON DIFFRACTION SYSTEM
20220317068 · 2022-10-06
Inventors
Cpc classification
G01N23/20058
PHYSICS
International classification
Abstract
A method for correcting distortion in a coherent electron diffraction imaging (CEDI) image induced by a projection lens makes use of a known secondary material that is imaged together with a sample of interest. Reflections generated from the secondary material are located in the image, and these observed reflections are used to approximate a beam center location. Using a known lattice structure of the secondary material, Friedel pairs are located in the image and unit cell vectors are identified. Predicted positions for each of the secondary material reflections are then determined, and the position differences between the observed reflections and the predicted reflections are used to construct a relocation function applicable to the overall image. The relocation function is then used to adjust the position of image components so as to correct for the distortion.
Claims
1. A method of correcting a distortion imparted to a diffraction image of a sample of interest by a projection lens in a coherent electron diffraction imaging (CEDI) system, the method comprising: a) obtaining a CEDI image of the sample of interest together with a secondary material having a known lattice structure; b) locating within the image the observed position of reflections corresponding to the secondary material; c) identifying unit cell vectors for the secondary material; d) determining a predicted position for each secondary material reflection corresponding to a respective Bravais-Miller index assigned thereto based on the unit cell vectors and the known lattice structure of the secondary material; and e) using differences between observed positions and predicted positions of secondary material reflections to relocate image components within the CEDI image.
2. A method according to claim 1 wherein the secondary material comprises graphene.
3. A method according to claim 1 wherein identifying unit cell vectors comprises finding difference vectors for pairs of the CEDI reflections corresponding to the secondary material and grouping the difference vectors according to length and direction, averaging the vectors of each group and selecting the shortest averaged group vectors having a similar length as the unit cell vectors.
4. A method according to claim 1 wherein determining a predicted position for each secondary material reflection comprises finding a linear combination of the unit cell vectors that corresponds to a position in the image proximate to the observed position of that reflection.
5. A method according to claim 1 wherein said differences between observed positions and predicted positions of secondary material reflections are found relative to a beam center location in the image.
6. A method according to claim 5 wherein said beam center location is found by averaging centroids of Friedel pairs using the observed positions of the secondary material reflections.
7. A method according to claim 5 wherein, for each secondary material reflection, a ratio is found between a distance of an observed reflection to the beam center location and a distance of a predicted reflection to the beam center location, and said ratios are used to characterize the distortion within the image relative to the beam center location.
8. A method according to claim 7 wherein said ratios and observed secondary material reflection positions are used to determine coefficients a, b, c, d, c.sub.x and c.sub.y that best satisfy the equation:
9. A method according to claim 8, wherein a least squares refinement is used to fit said equation to said ratios and observed secondary material reflection positions.
10. A method according to claim 8 wherein revised x and y values for a pixel location in the image are determined as follows:
x.sub.rev=(x−c.sub.x)/f(x, y)+c.sub.x (5)
y.sub.rev=(y−c.sub.y)/f(x, y)+c.sub.y (6) where x.sub.rev and y.sub.rev are, respectively, the revised x and y pixel values, x and y are, respectively, the original pixel values, and f(x,y) is a calculated version of Equation (4) using the determined coefficients.
11. A method according to claim 1 wherein the CEDI image is a first CEDI image, and wherein the method further comprises obtaining a plurality of CEDI images of the sample of interest together with the secondary material at a plurality of incidence angles, reflections from each of the images being used in the method after being corrected for position variations due to angle of incidence.
12. A method according to claim 1 wherein the secondary material comprises a plurality of layers each of which generates separate reflections that are used in the method.
13. A method according to claim 1 wherein the secondary material comprises a substrate on which the sample is located.
14. A method according to claim 1 wherein the secondary material is part of the sample.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0043] The present invention makes use of Bragg diffraction peaks from a secondary material such as graphene for identifying and correcting for CEDI lens distortion errors. In many CEDI experiments, graphene is used as a support for the specimen under test, as it is highly translucent to low energy electrons. Graphene is an allotrope of carbon in the form of a single layer of atoms in a 2D hexagonal lattice, in which one atom forms each vertex. An example of the hexagonal lattice of graphene is shown in
[0044] From the hexagonal symmetry, the relative distances of the reflections from the beam center can be derived from their Bravais-Miller indices, as shown below in Equation (3). The ratio between the observed distances and the distances predicted from the symmetry provide input for determining the distortion parameters.
d.sub.rel,hexagonal(h, k)=√{square root over (h.sup.2+k.sup.2+h*k)} (3)
As a 2D crystal, the Bragg reflections of graphene in reciprocal space, instead of spheroids as for 3D crystals, are cones (rods for idealized flat graphene). Consequently, the Bragg condition is fulfilled for all reflections at any incidence angle of the electron beam on the graphene, obviating the need to carefully align the graphene with the beam, as is the case with 3D crystals.
[0045] For 3D reconstructions, where the incidence angle changes continuously during the tomographic scan, the graphene reflections move away from the scan axis with increasing acuteness of the angle of incidence. This spreads out the reflections on the detector surface and allows for the sampling of different regions of the distortion function, which in turn allows for a more precise determination of the distortion parameters. This is demonstrated in
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[0047] The present invention uses the measured CEDI images of graphene as part of a method for identifying and compensating for lens distortions such as those described above. An exemplary embodiment of this method is outlined in the steps shown in
[0048] The method begins with the acquisition of a CEDI image in step 600. In step 602, the Bragg reflection positions of the graphene are located in the CEDI image. This may be done manually by a user visually identifying the reflections, and noting their pixel positions in the overall image. Alternatively, an automated procedure, such as a blob-detection method (e.g., connected-component labeling) may be applied. In general, a manual approach works best for images that also contain diffraction data from the specimen, or if multiple graphene domains are present.
[0049] In step 604, a correction for the angle of incidence tilt of the electron beam with respect to the graphene sheet is applied. This may be done by modifying the image so that the reflection positions are closer by a factor of 1/cosφ to the projection of the scan axis onto the image, with φ=0° for perpendicular incidence. Although the invention may make use of only one image, it is also possible to use a set of images taken using different angles of incidence. As discussed above with regards to
[0050] Once the graphene reflection positions for each image are located and corrected as described above, the difference vectors for all reflection pairs of each image are calculated (step 608). The difference vectors are grouped according to their length and direction using threshold criteria specified for limiting the maximum fractional deviation of vector lengths for grouping and the maximum angular deviation from collinearity for vectors within a group. An average difference vector for each group is then calculated.
[0051] In step 610, the three shortest group difference vectors are found, and those vectors will form the hexagonal lattice. The vectors should be similar in length, and oriented at angles of 60° relative to one another. The two vectors that are most closely similar in length are selected, and those vectors will be the unit cell vectors in reciprocal space. The beam center position (c.sub.x, c.sub.y) is then estimated by calculating the center of gravity of all of the reflection positions (step 612).
[0052] A Bravais-Miller index is assigned to each reflection (step 614) by finding the best linear combination of the two unit cell vectors from the beam center to the observed reflection position. In the preferred embodiment of the invention, the Ewald sphere curvature is neglected and approximated as a plane. This is a valid approximation given that the de Broglie wavelength of the electrons is very small, and the diffraction angles of the observed reflections are very low. An improved beam center position is then calculated by averaging over the centroids of all Friedel pairs of the observed reflections (step 616).
[0053] For each reflection, the ratio of the observed and calculated distance to the beam center is then determined (step 618). Using Equation (3) above, the distance between the observed position of each reflection and the beam center is determined, as is the distance between the calculated position of each reflection and the beam center. For each reflection, the ratio between these two values is then found and recorded.
[0054] In step 620, Equation (4) shown below is fit to the calculated ratios and observed reflection pixel positions (x,y) to determine a set of coefficients a, b, c, d, c.sub.x and c.sub.y.
The coefficients define the type and magnitude of the distortion indicated by the errors in the distances of the reflections from the beam center. The values c.sub.x and c.sub.y represent the coordinates of the beam center, and the values a, b, c, d provide different respective information regarding the nature of the distortion itself. These are defined herein as follows: 1) “a” represents an average magnification factor; 2) “b” represents a radial distortion coefficient; 3) “c” represents an elliptical distortion coefficient; and 4) “d” represents an ellipse inclination angle. Thus, by finding the magnitudes of these coefficients, an indication of the type of distortion being created by the projection lens may be determined. Moreover, knowing these values allows for a correction to be applied to the image data of a sample that has been shown to significantly improve the data quality.
[0055] The fitting process using Equation (4) may be according to a known fitting technique and, in the present embodiment, is a least squares refinement. The values for c.sub.x and c.sub.y found in step 616 are used, and starting values for the coefficients a, b, c and d are chosen empirically. In this embodiment, starting values of a=1, b=0 and d=0 are chosen. The starting value of c is the largest distance ratio found in step 618. Those skilled in the art will understand that, although values for the beam center coordinates c.sub.x, c.sub.y were obtained previously, these values are refined together with the coefficients a, b, c, d during the fitting process, which improves the overall result.
[0056] Once the coefficients are found, the equation may be used as a general tool for correcting the distortion in a CEDI image, affecting both image components related to the secondary material, e.g., graphene, and image components related to a sample under test. In this context, Equation (4) may be used as a transform function to restructure the image on a pixel-by-pixel basis. In applying the equation, a, b, c, d, c.sub.x and c.sub.y are replaced with the actual values determined during the fitting process, and revised x and y values can be calculated for any pixel location as follows:
x.sub.rev=(x−c.sub.x)/f(x, y)+c.sub.x (5)
y.sub.rev=(y−c.sub.y)/f(x, y)+c.sub.y (6)
where (x.sub.rev, y.sub.rev) is the revised pixel position, (x, y) is the original pixel position, and the distortion factor f(x,y) is the evaluation of Equation (4) at the original pixel position using the coefficients determined in the fitting process.
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[0058] The measured reflection data for the image shown in
[0059] Once the unit vectors are determined, the Bravais-Miller indices may be assigned to the observed reflections, as shown in the table of
[0060] The fitting of Equation (4) to the calculated ratios from
[0061] Once the distortion correction is known, it may be applied to the entire image, and therefore provides correction of image components related to other materials examined together with the graphene, such as a sample of interest mounted on a graphene substrate. Although both the sample and the secondary material are typically imaged together, it may also be possible to collect an image of just the secondary material by moving the electron beam to a region in which no sample material is present, and then use this image to calibrate the distortion function to be used for an image collected of the sample and secondary material together. Once a correction for the lens distortion is obtained, it may be applied to an unknown material based on the characteristics of the distortion determined by the examination of the secondary material, in this case graphene.
[0062] Although graphene was the material chosen for the present embodiment, those skilled in the art will understand that other materials with known characteristics may also be used for the characterization of a lens distortion when they are examined together with a sample of interest. One alternative material, for example, is silicon nitride. Although it is a three-dimensional crystal, and not two-dimensional like graphene, a similar process of finding predicted reflection positions and fitting Equation (4) to determine the coefficients indicative of the nature of the distortion may be used. However, such a 3D crystal would need to be aligned with the symmetry axis parallel to the electron beam.
[0063] In another embodiment of the invention, more than one layer of secondary material may be used. Shown in
[0064] When using multiple layers of secondary material, as in
[0065] In another embodiment, characterization of a lens distortion may be done using reflections of a known material that may be intrinsic to a sample of interest.