Abstract
Provided are a component carrier and a method for manufacturing thereof. The component carrier has a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure. At least one surface of the at least one electrically conductive layer structure is divided in at least one first portion and at least one second portion, with the at least one first portion and the at least one second portion being adjacent one to the other. The at least one first portion has a higher conductivity with respect to that of the at least one second portion. Metallic nanostructures and/or microstructures are provided on the at least one first portion.
Claims
1. A component carrier comprising: a stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure, wherein at least one surface of said at least one electrically conductive layer structure comprises at least one first portion and at least one second portion, said at least one first portion being adjacent to said at least one second portion, wherein said at least one first portion has a first conductivity and said at least one second portion has a second conductivity, and the first conductivity is greater than the second conductivity, wherein metallic nanostructures and/or microstructures are provided on said at least one first portion.
2. The component carrier according to claim 1, wherein of said at least one first portion has a first property of reflection of electromagnetic waves, said at least one second portion has a second property of reflection of electromagnetic waves, and the second property of reflection of electromagnetic waves is different from the first property of reflection of electromagnetic waves.
3. The component carrier according to claim 1, wherein the metallic nanostructures and/or microstructures comprise: nanowires, in particular metallic nanowires, and/or a micro- and/or nano-porous body, in particular nano-porous copper.
4. The component carrier according to claim 1, further comprising: an electrically insulating material covering said at least one second portion, and/or a chemical composition comprising a metal salt, metal oxide and/or metal nitride covering said at least one second portion, and/or a coating layer covering said at least one second portion.
5. The component carrier according to claim 1, further comprising: an electrically insulating material covering said at least one second portion and sandwiched between said at least one second portion and said at least one electrically insulating layer structure, and/or a chemical composition comprising a metal salt, metal oxide and/or metal nitride covering said at least one second portion and sandwiched between said at least one second portion and said at least one electrically insulating layer structure, and/or a coating layer covering said at least one second portion and sandwiched between said at least one second portion and said at least one electrically insulating layer structure.
6. The component carrier according to claim 1, wherein the metallic nanostructures and/or microstructures are encircled by: said at least one electrically insulating layer structure; and/or an electrically insulating material covering said at least one second portion; and/or a chemical composition covering said at least one second portion; and/or a coating layer covering said at least one second portion.
7. The component carrier according to claim 1, wherein the metallic nanostructures and/or microstructures are in direct contact with: said at least one electrically insulating layer structure; and/or an electrically insulating material covering said at least one second portion; and/or a chemical composition covering said at least one second portion; and/or a coating layer covering said at least one second portion.
8. The component carrier according to claim 1, wherein the at least one electrically conductive layer structure has a first thickness, and the at least one electrically insulating layer structure has a second thickness, and wherein the component carrier further comprises: an electrically insulating material covering said at least one second portion, the electrical insulating material having a respective thickness that is less than the first thickness and/or the second thickness; and/or a chemical composition comprising a metal salt, metal oxide and/or metal nitride covering said at least one second portion, the chemical composition having a respective thickness that is less than the first thickness and/or the second thickness; and/or a coating layer covering said at least one second portion, the coating layer having a respective thickness that is less than the first thickness and/or the second thickness.
9. The component carrier according to claim 1, further comprising: an electrically insulating material covering said at least one second portion, wherein the electrically insulating material comprises a material being different than a material of the at least one electrically conductive layer structure and/or the at least one electrically insulating layer structure; and/or a chemical composition comprising a metal salt, metal oxide and/or metal nitride covering said at least one second portion wherein the chemical composition comprises a material being different than a material of the at least one electrically conductive layer structure and/or the at least one electrically insulating layer structure; and/or a coating layer covering said at least one second portion wherein the coating layer comprises a material being different than a material of the at least one electrically conductive layer structure and/or the at least one electrically insulating layer structure.
10. The component carrier according to claim 1, wherein the at least one electrically conductive layer structure comprises a first electrically conductive layer structure having a first layer first portion and a first layer second portion, and a second electrically conductive layer structure having a second layer first portion and a second layer second portion, wherein the second electrically conductive layer structure is opposed to the first electrically conductive layer structure.
11. The component carrier according to claim 10, wherein the component carrier comprises a first sub-carrier comprising the first electrically conductive layer structure and a second sub-carrier comprising the second electrically conductive layer structure, wherein the first sub-carrier is stacked above the second sub-carrier in a thickness direction with the first electrically conductive layer structure opposed to the second electrically conductive layer structure.
12. The component carrier according to claim 10, wherein the metallic nanostructures and/or microstructures are located on only the first layer first portion and are configured to abut against the second layer first portion.
13. The component carrier according to claim 10, wherein the metallic nanostructures and/or microstructures are provided on the first layer first portion and the second layer first portion.
14. The component carrier according to claim 10, wherein the first layer first portion is spaced by a first vertical distance from the second layer first portion, the first layer second portion is spaced by a second vertical distance from the second layer second portion, and the first vertical distance is different than the second vertical distance.
15. The component carrier according to claim 10, wherein at least one distancing element is located between the first electrically conductive layer structure and the second electrically conductive layer structure.
16. The component carrier according to claim 10, wherein a protecting material is located between the first layer first portion and the second layer first portion.
17. The component carrier according to claim 10, wherein: the first layer first portion at least partially overlaps the second layer first portion and/or the second layer second portion; and/or the first layer second portion at least partially overlaps the second layer first portion and/or the second layer second portion.
18. The component carrier according to claim 1, wherein: the at least one electrically conductive layer structure comprises a first electrically conductive layer structure having a first quantity of first layer first portions and a second quantity of first layer second portions, and a second electrically conductive layer structure having a third quantity of second layer first portions and a fourth quantity of second layer second portions; the second electrically conductive layer structure is opposed to the first electrically conductive layer structure; and the first quantity is different from the third quantity and/or the second quantity is different from the fourth quantity.
19. The component carrier according to claim 1, wherein: the at least one electrically conductive layer structure comprises a first electrically conductive layer structure having a plurality of first layer first portions and a plurality of first layer second portions, and a second electrically conductive layer structure having at least one second layer first portion and at least one second layer second portion; the second electrically conductive layer structure is opposed to the first electrically conductive layer structure; and the plurality of first layer first portions overlaps a single one of the at least one second layer first portions or a single one of the at least one second layer second portions, and/or the plurality of first layer second portions overlaps a single one of the at least one second layer first portion or a single one of the at least one second layer second portions.
20. A method of manufacturing a component carrier, wherein the method comprises: providing a stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure, dividing at least one surface of said at least one electrically conductive layer structure into at least one first portion and at least one second portion, wherein said at least one first portion is adjacent to said at least one second portion, said at least one first portion has a first conductivity, said at least one second portion has a second conductivity, and the first conductivity is greater than the second conductivity; and providing metallic nanostructures and/or microstructures on said at least one first portion.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0087] FIG. 1 illustrates a cross-sectional view of a component carrier according to an exemplary embodiment.
[0088] FIG. 2 illustrates cross-sectional view of another component carrier according to an exemplary embodiment.
[0089] FIG. 3a to FIG. 3e illustrate cross-sectional views of structures obtained during carrying out a method of manufacturing a component carrier according to an exemplary embodiment of the invention.
[0090] FIG. 4a to FIG. 4b illustrate cross-sectional views of structures of a first variant when continuing from FIG. 3e obtained during carrying out a method of manufacturing a component carrier, shown in FIG. 1, according to an exemplary embodiment of the invention.
[0091] FIG. 5a to FIG. 5b illustrate cross-sectional views of structures of a second variant when continuing from FIG. 3e obtained during carrying out a method of manufacturing a component carrier, shown in FIG. 1, according to an exemplary embodiment of the invention.
[0092] FIG. 6a to FIG. 6d illustrate cross-sectional views of structures obtained during carrying out another method of manufacturing a component carrier, shown in FIG. 1, according to another exemplary embodiment of the invention.
[0093] FIG. 7a to FIG. 7e illustrate cross-sectional views of structures obtained during carrying out a further method of manufacturing a component carrier, shown in FIG. 1, according to a further exemplary embodiment of the invention.
[0094] FIG. 8a illustrates a cross-sectional view of a micro- and/or nano-porous body, according to an exemplary embodiment of the invention.
[0095] FIG. 8b illustrates a cross-sectional view of a component carrier comprising an electrically conductive layer structures having a surface with a first portion, wherein metallic nanostructures and/or microstructures are provided on said first portion.
[0096] FIG. 8c illustrates a cross-sectional view of a component carrier comprising a stack comprising two adjacent electrically conductive layer structures. Each of the electrically conductive layer structures comprises a surface with a first portion, wherein metallic nanostructures and/or microstructures are provided on said first portion. The respective metallic nanostructures and/or microstructures are in direct contact and intermingled with each other.
DETAILED DESCRIPTION
[0097] FIG. 1 shows an example of a component carrier 100 according to the first aspect of the present invention. The component carrier 100 comprises a stack 110 comprising at least one electrically conductive layer structure 120 and at least one electrically insulating layer structure 130. Preferably, the at least one electrically conductive layer structure 120 and at least one the electrically insulating layer structure 130 may be aligned one above each other in stacking direction Z, which is perpendicular with respect to the main extension direction of the component carrier 100, in order to create a stack 110. In an example, the stack 110 may comprise a plurality of electrically conductive layer structures 120 and/or a plurality of electrically insulating layer structures 130 (alternatingly) aligned one above the other regarding stacking direction Z. Preferably, the electrically conductive layer structure 120 may comprise copper, whereas the electrically insulating layer structure 130 may comprise an organic polymer, for example epoxy resin. At least one surface 140 of said at least one electrically conductive layer structure is divided in at least one first portion 150 and at least one second portion 160. Said at least one first portion 150 and said at least one second portion 160 are adjacent one to the other and the at least one first portion 150 has a higher conductivity with respect to that of the at least one second portion 160, wherein on said at least one first portion 150 metallic nanostructures and/or micro structures 170, in the specific embodiment a plurality of nanowires 170, are provided. Preferably, the at least one electrically conductive layer structure 120 may be located at one of the two main surfaces of the component carrier 100. In an example, the electrical conductivity and/or the thermal conductive of said at least one first portion 150 may be higher than that of the at least second portion 160. In another example, the at least one first portion 150 may have different other physical properties, for example roughness and/or surface energy and/or dielectric constant, compared to the at least one second portion 160. Due to the physical properties, especially the electrically conductivity, (copper) nanowires 170 are provided on the surface of and/or at the first portion 150. Without the division of the at least one electrically conductive layer structure 120 in at least one first portion 150 and at least one second portion 160, (copper) nanowires 170 may be provided to an electrically conductive layer structure 120 without any control at which position the (copper) nanowires are located. Due to the division of the surface 140 of the electrically conductive layer structure into the at least one first portion 150 and the at least one second portion 160, (copper) nanowires 170 are provided at at least one dedicated surface 140 of an electrically conductive layer structure 120. Optionally, the exposed electrically conductive layer structure 120 of the stack 110 may comprise a surface finish, for example comprising gold and/or nickel and/or palladium, and/or the exposed electrically insulating layer structure 130 of the stack 110 may comprise a solder resist. In the shown example, the at least one electrically conductive layer structure 120 may comprise a pad and/or a trace, preferably a copper pad and/or a copper trace, wherein the surface 140 of said (copper) pad and/or (copper) trace is divided into the at least one first portion 150 and the at least one second portion 160. In particular, one (copper) trace or (copper) pad may comprise the at least one first portion 150 and the at least one second portion 160 being adjacent one to the other. Alternatively, one (copper) pad or one (copper) trace may comprise the at least one first portion 150 and another (copper) pad or another (copper) trace may comprise the at least one second portion 160. In a further example, the at least one first portion 150 may be laterally shifted relative to the at least one second portion 160 and thereby having a common interface. In other words, the at least one first portion 150 and the at least one second portion 160 may be in direct contact with each other. Additionally or alternatively, the at least one first portion 150 and the at least one second portion 160 may be laterally shifted such that they are not in direct contact with each other. In an alternative not shown embodiment, an electrically insulating material is provided, said electrically insulating material covering said at least one second portion 160. According to the shown embodiment of the invention, a chemical composition 132, in particular a metal salt, more in particular a metal oxide or a metal nitride, for example copper oxide and/or silver oxide and/or copper nitride and/or silver nitride, is provided, said chemical composition 132 covering said at least one second portion 160. Additionally or alternatively, the metal salt may comprise a metal chloride and/or a metal sulfate and/or a metal nitrite, for example copper chloride and/or copper sulfate and/or copper nitrite. In an example, the electrically insulating material may comprise the chemical composition 132. According to the shown embodiment, a coating layer 136 is provided, said coating layer 136 covering said at least one second portion 160. In an example, the electrically insulating material may comprise a coating layer 136 (in addition or alternatively to the chemical composition 132). In an example, the coating layer 136 may comprise polymeric material, in particular an organic polymeric material, for example an epoxy resin and/or a poly (meth)acrylate and/or polyimide. Preferably, the electrically insulating material and/or the coating layer 136 and/or the chemical composition 132 may be located at the main surface of the electrically conductive layer structure 120. Additionally or alternatively the electrically insulating material and/or the coating layer 136 and/or the chemical composition 132 may be located at the surface of at least one side wall of the electrically conductive layer structure 120. This may bring the advantage of selectively providing metallic nanostructures and/or microstructures 170 at the at least one first portion 150 since the insulating material and/or the coating layer 136 and/or the chemical composition 132 provided on the surface 140 of the at least one second portion 160 may prevent the (copper) nanowires 170 from growing. The (copper) nanowires 170 may be physical structures with dimensions in the range of nanometers to micrometers, in particular having dimensions in a range between 0.1 nm and 10 micrometers. Preferably, the (copper) nanowires 170 may have dimensions in a range between 1 nm and 500 nm. Additionally or alternatively, the metallic nanostructures and/or microstructures 170 may comprise at least 100, in particular at least 1000, individual nanostructures and/or microstructures, in particular nanowires. Preferably, the nanowires 170 may comprise or consist of copper. Alternatively, nanowires 170 may comprise a metal being different from copper, for example nickel, silver, titanium, chromium or cobalt. In another example, the (copper) nanowires 170 may have an elongated shape and/or may have a cylindrical shape with an axial dimension being at least 5 times, in particular at least 10 times, larger than their respective radial dimension. Alternatively, the metallic nanostructures and/or microstructures 170 may comprise nano-porous copper. As can be seen in FIG. 1, the electrically insulating material and/or the coating layer 136 and/or chemical composition 132 may be located, in particular sandwiched, between said at least one second portion 160 and the at least one electrically insulating layer structure 130. Additionally or alternatively, the electrically insulating material and/or the coating layer 136 and/or chemical composition 132 may be in direct contact with the electrically conductive layer structure 120 and the electrically insulating layer structure 130. Furthermore, the (copper) nanowires 170 may be in direct contact with the at least one electrically conductive layer structure 120. Preferably, the (copper) nanowires 170 may be in direct contact with the at least one electrically conductive layer structure 120 which is located at at least one of the two main surfaces of the component carrier 100. In an example, an extremity of the (copper) nanowires 170 may be connected to the at least one first portion 150. Additionally, (copper) nanowires 170 may be in direct contact with said electrically insulating material and/or said chemical composition 132 and/or said coating layer 136 provided on of said at least one second portion 160. Since a method is used growing the (copper) nanowires 170 directly from/on the at least first portion 150, the (copper) nanowires may have a good mechanical connection to the at least one electrically conductive layer structure 120. In a further example, the (copper) nanowires 170, in particular the lateral surface of the (copper) nanowires 170, may be in direct contact with the electrically insulating layer structure 130 and/or a protecting material 131, in the specific embodiment a underfilling material. Preferably, the electrically insulating material and/or said chemical composition 132 and/or said coating layer 136 covering the surface 140 of said at least one second portion 160 may comprise a thickness being different, in particular lower, than the thickness of the at least one electrically conductive layer structure 120 and/or the at least one electrically insulating layer structure 130 of the stack 110. In an example, the thickness of the electrically insulating material and/or said chemical composition 132 and/or said coating layer 136 may be in the range from 0.1 m to 25 m, in particular in the range from 2 m to 15 m. In comparison to that, the thickness of the electrically insulating layer structure 130 and/or electrically conductive layer structure 120 may be in the range from 5 m to 300 m. Alternatively, the thickness of the insulating material and/or said chemical composition 132 and/or said coating layer 136 may be smaller than 10%, in particular 20%, than the thickness of the electrically conductive layer structure 120 and/or electrically insulating layer structure 130. In a further example, the thickness of the chemical composition 132, in particular a metal salt, more in particular copper oxide, may be in the range from 100 nm to 500 nm. In comparison, the thickness of the electrically insulating layer structure 130 and/or the underfilling material 131 may be in the range from 5 m to 300 m and/or the thickness of the electrically conductive layer structure 120 may be in the range from 2 m and 20 m. In another example, the thickness of the electrically insulating material and/or coating layer 136, for example a photo imageable material, may be in the range from 1 m to 10 m. In comparison, the electrically insulating layer structure 130 and/or the underfilling material 131 may be in the range from 15 m to 300 m. Still in another example, the sum of the thickness of the electrically conductive layer structure 120 and the (copper) nanowires 170 and the electrically insulating material or said chemical composition 132 or the coating layer 136 may be substantially the same as the thickness of the underfilling material 131. This may bring the advantage of modifying the surface 140 of the at least one electrically conductive layer structure 120 without increasing the overall thickness of the component carrier 100 to a large extend. Preferably, the material of the electrically insulating material and/or said chemical composition 132 and/or the coating layer 136 covering the surface of said at least one second portion 160 may be different to the material of the of the at least one electrically conductive layer structure 120 and/or the at least one electrically insulating layer structure 130. Additionally or alternatively, the material of the electrically insulating material and/or said chemical composition 132 and/or the coating layer 136 covering the surface of said at least one second portion 160 may be similar to the material of the of the at least one electrically conductive layer structure 120 and/or the at least one electrically insulating layer structure 130. In an example, the material of at least one the electrically conductive layer structures 120 may consist of copper, whereas the material of the chemical composition 132 may comprise a metal salt, in particular copper oxide. Since copper oxide comprises electrically insulating properties and metallic copper comprises electrically conductive properties, the two materials shall be considered as different materials even if they comprise the same element, in this case copper. Thus (copper) nanowires 170 may grow on a metallic copper surface, whereas the (copper) nanowires 170 may not grow on a copper oxide surface, since the copper oxide is resistant to the conditions under which the nanostructures are applied. Preferably, the component carrier 100 may comprise at least two electrically conductive layer structures 120 opposed one to each other. In an example, one of the at least two electrically conductive layer structures 120 may be divided in an at least one first portion 150 and an at least one second portion 160. The other one of the least two electrically conductive layer structures 120 may be free from a division into an at least one first portion 150 and an at least one second portion 160. In another example, each of the at least two electrically conductive layer structures 120 may be divided in a respective at least one first portion 150 and a respective at least one second portion 160. In an example the component carrier 100 may comprise a stack 110 having an arrangement that the at least one electrically insulating layer structure 130 and/or an underfilling material 131 is sandwiched regarding stacking direction Z between the two adjacent electrically conductive layer structures 120. The reflection of electromagnetic waves of said at least one first portion 150 is different, in particular higher, compared to the reflection of electromagnetic waves of said at least one second portion 160. In an example, the electromagnetic waves may comprise waves for high frequency application and/or waves in between 300 nm to 1000 nm. The electrically insulating material and/or said chemical composition 132 and/or said coating layer 136 covering the at least one second portion 160 may influence the reflection of electromagnetic waves and thus the reflection of electromagnetic waves of said at least one first portion 150 may be different, in particular higher than, compared to the reflection of electromagnetic waves of said at least one second portion 160. In a preferred example, the at least one first portion 150 may free of said electrically insulating material and/or said chemical composition 132 and/or said coating layer 136. Additionally or alternatively, said electrically insulating material and/or said chemical composition 132 and/or said coating layer 136 may be exclusively provided on said at least one second portion 160. In a preferred example, at least 80%, in particular at least 95%, of the surface 140 of said at least one first portion 150 may be connected to the (copper) nanowires 170. Alternatively, at least 60% of the surface 140 of said at least one first portion 150 may be connected to the (copper) nanowires 170. Since a plurality, in particular more than 100, of (copper) nanowires 170 are provided, even a coverage of at least 60% of the surface 140 of the at least one first portion 150 with the (copper) nanowires 170 may ensure a reliable mechanical and/or electrical connection between the nanostructures and/or microstructures 170 and a further electrically conductive layer structure 120. In another preferred perspective, the (copper) nanowires 170 may be encircled by the (at least one) electrically insulating layer structure 130 and/or the underfilling material 131 and/or by said electrically insulating material and/or by said chemical composition 132 and/or by said coating layer 136. This may bring the advantage of defining where the (copper) nanowires 170 shall be provided in a precise way, since the surface 140 of the first portion 150 is circumferentially closed by the (at least one) electrically insulating layer structure 130 and/or the underfilling material 131 and/or by said electrically insulating material and/or by said chemical composition 132 and/or by said coating layer 136. A plurality of the (copper) nanowires 170 may be encircled by the same (at least one) electrically insulating layer structure 130 and/or by said electrically insulating material and/or by said chemical composition 132 and/or by said coating layer 136. In another example, the (copper) nanowires 170 may be provided on one of said two opposed electrically conductive layer structures 120 and are configured to abut against the surface of the at least one (further) first portion 150, 152 of the opposed electrically conductive layer structure (see FIG. 5a, FIG. 5b). In a further example, each of the opposed electrically conductive layer structures 120 may comprise the respective first portion 150, in particular at least one further first portion 152, and second portions 160, in particular at least one further second portion 162. Preferably the respective second portion 160, in particular the at least one further second portion 162, may comprise said electrically insulating material and/or said chemical composition 132 and/or said coating layer 136. This may enable to provide (copper) nanowires 170 on the at least one further first portion 152 of the opposed electrically conductive layer structure 120 too. Further preferably, the (copper) nanowires 170 may be provided on the at least one (further) first portion 150, 152 of each the two opposed electrically conductive layer structures 120. Thereby, the (copper) nanowires 170 may intermingle one to each other resulting in a reliable mechanical interconnection between the two opposed electrically conductive layer structures 120. In a further example, the at least one first portion 150 and/or the at least one second portion 160 of the respective electrically conductive layer structure 120 at least partially overlaps with the respective (further) first portion 150, 152 and/or said (further) second portion 160, 162 of the opposed electrically conductive layer structure 120. Preferably, the at least one second portion 160 of the respective electrically conductive layer structure 120 at least partially overlapped the respective (further) second portion 160, 162 of the opposed electrically conductive layer structure 120 may be configured to create a (double plate) condenser. The condenser may have a capacitance smaller than 1 mF, in particular in the range from 1 pF to 500 F, more in particular in the range from 1 pF to 500 nF. This may bring the advantage of powering components 192 having a small power consumption associated to the component carrier 100. In a further example, the vertical distance between the two opposed first portions 150, 152 may be different than the vertical distance between the two opposed second portions 160, 162. Alternatively, the vertical distance between the two opposed first portions 150, 152 may be similar, in particular the same, as the vertical distance between the two opposed second portions 160, 162. Since the distance between the two opposed second portions 160, 162 may be smaller than the distance between the two opposed first portions, 150, 152, this may intrinsically include that at least a portion of the (copper) nanowires 170 is (laterally) protected due to the thickness of the electrically insulating material and/or said chemical composition 132 and/or said coating layer 136 provided on the two opposed second portion 160, 162. In another example, a plurality among the first portions 150 or the second portions 160 of one of the two opposed electrically conductive layer structures 120 may at least partially overlap one (common) respective (further) first portion 150, 152 or one (common) respective (further) second portion 160, 162 of the other one of the opposed electrically conductive layer structures 120. Additionally or alternatively, a first portion 150 of the electrically conductive layer structures 120 may overlap one respective (further) first portion 150, 152 of the opposed other electrically conductive layer structure 120 and/or a second portion 160 of the electrically conductive layer structures 120 may overlap one respective (further) second portion 160, 162 of the opposed other electrically conductive layer structure 120. In another example, the at least one first portion 150 and/or the at least one second portion 160 of the opposed electrically conductive layer structures 120 may have different planar extension one to each other, in particular with respect to the portions of the same electrically conductive layer structure 120 or with respect to those belonging to the opposed electrically conductive layer structures 120, more in particular those at least partially overlapping along the stack thickness direction Z. Alternatively, the at least one first portion 150 and/or the at least one second portion 160 of the opposed electrically conductive layer structures 120 may have similar, in particular the same, planar extension one to each other, in particular with respect to the portions of the same electrically conductive layer structure 120 or with respect to those belonging to the opposed electrically conductive layer structures 120, more in particular those at least partially overlapping along the stack thickness direction Z. This may compensate possible misalignments of the two opposed electrically conductive layer structures 120, since the two opposed first portions 150, 152 and/or second portions 160, 162 may sufficiently overlap each other. In a preferred example, the opposed first portions 150, 152 may have the same electrical function. Preferably, the opposed first portions at least those at least partially planarly overlapping may have the same electrical function. In an example, an electrical function may include, power, ground, or signal. Alternatively, the opposed first portions 150, 152 may have different electrical functions. In another example, the amount of the first portions 150 and/or second portions 160 of one of the two opposed electrically conductive layer structures 120 may be different than or is the same as the respective amount the (further) first portions 150, 152 and/or (further) second portions 160, 162 of the opposed electrically conductive layer structures 120. Still in another example, a distancing element 190 may be located between the at least two opposed electrically conductive layer structures 120, in particular between the opposed second portions 160, 162, and/or the at least two opposed electrically insulating layer structures 130. In an example, the distancing element 190 may comprise electrically conductive material or electrically insulating material. Additionally or alternatively, the distancing element 190 may comprise a shape as a pillar, a cube, a cone, a pyramid or an irregular shape. Further additionally or alternatively, the distancing element 190 may be a component 192. In a preferred example, in the same vertical level of the stack 110 regarding stacking direction Z, the electrically insulating material and/or said chemical composition 132 and/or said coating layer 136 may be located. Additionally or alternatively, the electrically insulating material and/or said chemical composition 132 and/or said coating layer 136 may be in contact with the same electrically conductive layer structure 120, in particular at the same surface 140. This may simplify the manufacturing process and thus may enable a production of a component carrier 100 having a complex design. In another example, at least two electrically conductive layer structures 120 may be vertically interconnected by (metal filled) through connections. For example, the through connections may be mechanical and/or laser processed through holes, which are at least partially filled, preferably fully filled by electrically conductive material, in particular copper. This may bring the advantage of mechanically and/or electrically interconnect two (adjacent) electrically conductive layer structures 120.
[0098] FIG. 2 shows a further example of a component carrier 100 according to the first aspect of the present invention. The component carrier 100 comprises a stack 110 comprising a first sub-carrier 180 and a second sub-carrier 182. As can be seen by the zoom of the stack 111, each of the two sub-carrier 180, 182 comprises a respective plurality of electrically conductive layer structures 120 and at least one electrically insulating layer structure 130. Optionally, it may be possible that the component carrier according to FIG. 1 comprises a first sub-carrier 180 and a second sub-carrier 182. Again referring to FIG. 2, the respective different electrically conductive layer structures 120 of each sub-carrier 180, 182 may be interconnected in stacking direction Z by vertical through connections. Said vertical through connections may be fully metalized structures, for example consisting of copper, and/or may comprise paste material, for example a solder paste and/or sinter paste. The respective sub-carrier 180, 182 may comprise an embedded and/or surface mounted component 192. Preferably, a first sub-carrier 180 may comprise at least one electrically conductive layer structure 120 being exposed at one main surface of the first sub-carrier 180, wherein at least one surface 140 of said exposed at least one electrically conductive layer structure 120 is divided in at least one first portion 150 and at least one second portion 160, said at least one first portion 150 and said at least one second portion 160 being adjacent one to the other, said at least one first portion 150 having a higher conductivity with respect to that of said at least one second portion 160, wherein on said at least one first portion 150 (copper) nanowires 170 are provided. Moreover, a second sub-carrier 182 may comprise at least one electrically conductive layer structure 120 being exposed at one main surface of the second sub-carrier 182, wherein at least one surface 140 of said exposed at least one electrically conductive layer structure 120 is divided in at least one further first portion 152 and at least one further second portion 162, said at least one further first portion 152 and said at least one further second portion 162 being adjacent one to the other, said at least one further first portion 152 having a higher conductivity with respect to that of said at least one further second portion 162, wherein on said at least one further first portion 152 (copper) nanowires 170 are provided. Additionally or alternatively, the respective sub-carrier 180, 182 may comprise at least one electrically conductive layer structure 120 being located in the inner volume of the sub-carrier 180, for example as shown in the zoom of the stack 111, wherein at least one surface 140 of said at least one electrically conductive layer structure 120 is divided in at least one (further) first portion 150, 152 and at least one (further) second portion 160, 162, said at least one (further) first portion 150, 152 and said at least one (further) second portion 160, 162 being adjacent one to the other, said at least one (further) first portion 150, 152 having a higher conductivity with respect to that of said at least one (further) second portion 160, 162, wherein on said at least one (further) first portion 150, 152 (copper) nanowires 170 are provided. A chemical composition 132 may cover the at least one second portion 160 of the first sub-carrier 180 and/or the at least one further second portion 162 of the second sub-carrier 182. Additionally or alternatively, an electrically insulating material or a coating layer 136 may be provided at the at least one second portion 160 and/or the at least one further second portion 162. The respective sub-carrier 180, 182 may comprise different amount of electrically conductive layer structures 120 and/or copper density distribution and/or components 192 embedded in and/or surface mounted on the stack 110 compared one to the other. Furthermore, the respective sub-carrier 180, 182 may be semi-finished component carrier, which are pre-manufactured. Preferably, the first sub-carrier 180 and the second sub-carrier 182 may be located such that, the first sub-carrier 180 comprising the (exposed) at least one electrically conductive layer structure 120 comprising the at least one first portion 150 with the (copper) nanowires 170 provided on is facing the second sub-carrier 182 comprising the (exposed) at least one electrically conductive layer structure 120 comprising the at least one further first portion 152 with the (copper) nanowires 170 provided on. Alternatively, the first sub-carrier 180 and the second sub-carrier 182 may be located such, that the first sub-carrier 180 comprising the (exposed) at least one electrically conductive layer structure 120 comprising the at least one first portion 150 with the (copper) nanowires 170 provided on is facing the second sub-carrier 182 comprising an (exposed) at least one electrically conductive layer structure 120 being free from (copper) nanowires 170. In another example, the component carrier 100 may comprise a stack 110 comprising at least two sub-carrier 180, 182 and having an arrangement that the at least one electrically insulating layer structure 130 and/or an underfilling material 131 is sandwiched regarding stacking direction Z between the two adjacent sub-carrier 180, 182. Preferably, the (copper) nanowires 170 may be provided on the at least one (further) first portion 150, 152 of each the two opposed electrically conductive layer structures 120, in particular different sub-carrier 180, 182. Thereby, the (copper) nanowires 170 may intermingle one to each other resulting in a reliable mechanical interconnection between the two opposed electrically conductive layer structures 120 of the different sub-carriers 180, 182. Preferably, the at least one first portion 150 and/or the at least one second portion 160 of the respective electrically conductive layer structure 120 provided on the first sub-carrier 180 may at least partially overlap with the respective (further) first portion 150, 152 and/or said (further) second portion 160, 162 of the opposed electrically conductive layer structure 120 provided on the second sub-carrier 182.
[0099] FIG. 3a to FIG. 3e in combination with FIG. 4a and FIG. 4b illustrate cross-sectional views of structures obtained during carrying out a preferred method of manufacturing a component carrier 100 according to an exemplary embodiment of the second aspect of the invention.
[0100] FIG. 3a to FIG. 3e in combination with FIG. 5a and FIG. 5b illustrate cross-sectional views of structures obtained during carrying out a further method of manufacturing a component carrier 100 according to an exemplary embodiment of the second aspect of the invention.
[0101] Referring to FIG. 3a, a component carrier 100 comprising a stack 110 comprising two electrically conductive layer structures 120 and one electrically insulating layer structure 130 is shown. The electrically insulating layer structure 130 may be sandwiched between the respective two electrically conductive layer structures 120 regarding stacking direction Z. The electrically conductive layer structures 120 may be mechanically and/or electrically interconnected with each other by (vertical) through connections. In this example, the electrically conductive layer structure 120 located on the bottom side of the component carrier 100 may be structured into a plurality of separate portions, wherein each portion of the electrically conductive layer structure 120 has a surface 140 being exposed. Additionally, the electrically conductive layer structure 120 located on the top side of the component carrier 100 may be structured into another plurality of separate portions. Alternatively, the component carrier 100 may comprise an electrically conductive layer structure 120 exposed on one main surface, only.
[0102] Referring to FIG. 3b, additionally to FIG. 3a, a temporary electrically insulating layer 139 is provided on the bottom electrically conductive layer structure 120. The temporary electrically insulating layer 139 may cover the main surface of the (plurality of separate portions of the) electrically conductive layer structure 120. Additionally, the temporary electrically insulating layer 139 may cover the lateral surface of the (plurality of separate portions of the) electrically conductive layer structure 120 and/or the main surface of the electrically insulating layer structure 130. In an example, the temporary electrically insulating layer 139 may be a photo resist. Alternatively, the temporary electrically insulating layer 139 may be a dry film. Preferably, the temporary electrically insulating layer 139 may be processable, for example by a laser beam. In an example, the temporary electrically insulating layer 139 may be applied as an entire layer.
[0103] Referring to FIG. 3c, in comparison to FIG. 3b at least a portion of the temporary electrically insulating layer 139 is structured, in particular partially removed, in order the expose the below laying electrically conductive layer structure 120 and/or electrically insulating layer structure 130. Thereby, the main surface and/or the lateral surface of the electrically conductive layer structure 120 is exposed. For example, the structuring process may be done by exposing the temporary electrically insulating layer 139 to electromagnetic light and a subsequent development process. Alternatively, the structuring process may comprise a laser assisted process and/or a plasma process and/or a reactive ion etching process. Preferably, the portion of the temporary electrically insulating layer 139 which was subjected to the structuring process may create the at least one second portion 160 and the portion of the temporary electrically insulating layer 139 which was not subjected to the structuring process may create the at least one first portion 150. This process step may divide surface 140 of the electrically conductive layer structure 120 in at least one first portion 150 and at least one second portion 160, wherein the at least one first portion 150 and the at least one second portion 160 being adjacent one to the other. In an example, one electrically conductive layer structure 120 may comprise at least one first portion 150 and the at least one second portion 160. In another not shown alternative example, one electrically conductive layer structure 120 may comprise at least one first portion 150 and another electrically conductive layer structure 120 may comprise at least one second portion 160.
[0104] Referring to FIG. 3d, portions of the electrically conductive layer structure 120 being exposed in FIG. 3c are subjected to a surface treatment process step, in particular an oxidation step. Thereby the exposed surface 140 of the at least one second portion 160 may be chemically converted, for example copper is transformed into copper oxide, and thereby a chemical composition 132 may be provided on the at least one second portion 160. Alternatively, the surface treatment process step may comprise converting a metal into a metal oxide or a metal nitride. Preferably, the surface treatment process step may be performed on the exposed at least one second portion 160 only. This may have the effect of affecting and/or changing the physical properties, for example the electrical conductivity and/or the thermal conductivity and/or the surface energy, of the at least one second portion 160 and comparison with the at least one first portion 150. In an example, the thickness of the chemical composition 132 in stacking direction Z may be different, in particular thinner, than the electrically conductive layer structure 120 and/or the electrically insulating layer structure 130.
[0105] Referring to FIG. 3e, in comparison to FIG. 3d the temporary electrically insulating layer 139 is fully removed from the component carrier 100. Alternatively, at least a portion of the temporary electrically insulating layer 139 may remain on the surface of the stack 110. The consequent exposed portion of the electrically conductive layer structure 120, in particular that not subjected to the surface treatment process step, corresponds to the at least one first portion 150. In an example, (at least a portion of) the at least one electrically conductive layer structure 120 previously subjected to a surface treatment process step may be fully covered by the chemical composition 132 at its main surface and its lateral surface. Alternatively, (at least a portion of) the at least one electrically conductive layer structure 120 previously subjected to a surface treatment process step may be partially covered by the chemical composition 132. In other words, at least a portion of the main surface and/or the lateral surface of the (at least a portion of the) electrically conductive layer structure 120 may be free from the chemical composition 132. The temporary electrically insulating layer 139 may be removed by a stripping process.
[0106] Referring to FIG. 4a, in comparison to FIG. 3e, (copper) nanowires 170 are provided, in particular grown, on the resulting first portions 150. Preferably, on every first portion 150 (copper) nanowires 170 may be provided. Alternatively, at least a portion of the first portion 150 may be free from metallic nanostructures and/or microstructures 170. Close by lateral adjacent chemical composition 132 may interfere the growing of (copper) nanowires 170 and thus a portion of the at least one first portion 150 may be free from (copper) nanowires. Additionally or alternatively, the electrically insulating material and/or said coating layer 136 may interfere the growing of the (copper) nanowires 170 when being located in close by lateral adjacent position. Preferably, the (copper) nanowires 170 may be provided on the main surface of the at least one first portion 150 of the electrically conductive layer structure 120. Additionally or alternatively, the (copper) nanowires 170 may be provided on the lateral surface of the at least one first portion 150 of the electrically conductive layer structure 120. Preferably, the (copper) nanowires 170 may be provided on the at least one first portion 150 only. According to an embodiment, providing the (copper) nanowires 170 comprises a galvanic process and/or a wet chemical process without application of electric current. Alternatively, providing the (copper) nanowires 170 may include a physical vapour deposition process and/or a chemical vapour deposition process.
[0107] FIG. 4a depicts an exploded view of the stack 110 of the component carrier 100, according to a further exemplary embodiment of the present invention. The component carrier 100 comprises two respective sub-stacks 112. Thereby the sub-stacks 112 are located such, that the respective electrically conductive layer structures 120 comprising the respective (copper) nanowires 170 provided on the respective at least one first portions 150 are facing each other. In between the sub-stacks 112 regarding stacking direction Z an underfilling material 131 is provided. Additionally or alternatively, an electrically insulating layer structure 130 may be provided between the respective sub-stacks 112. The underfilling material 131 may comprise at least one cut-out portion. Preferably, the cut-out portion may overlap in stacking direction Z with the (copper) nanowires 170 of the respective sub-stack 112. Preferably, the underfilling material 131 may be different compared to the electrically insulating layer structure 130 in term of material and/or material composition.
[0108] Referring to FIG. 4b, after applying thermal energy and/or elevated pressure, for example larger than 80 C. and/or 1.5 bars, on the stack 110 according to FIG. 4a, a component carrier 100 similar to FIG. 1 is created. Thereby the underfilling material 131 may adhere to the electrically insulating layer structure 130 and/or the electrically conductive layer structure 120 and/or the chemical composition 132 and/or the (copper) nanowires 170 and/or sub-stacks 112. Since during the application of thermal energy and/or elevated pressure, the underfilling material 131 may be at least partially flow able and thus may get in direct contact with the lateral walls of the electrically insulating layer structure 130 and/or the electrically conductive layer structure 120 and/or the chemical composition 132 and/or the (copper) nanowires 170 and/or sub-stacks 112. This may create a component carrier 100 having a high integrity and/or good adhesion between the respective different layers. Additionally or alternatively, the (copper) nanowires 170 of the respective sub-stacks 112 may get in direct contact and/or intermingle one to each other. This may a reliable mechanical and/or electrical interconnection between the two adjacent sub-stacks 112.
[0109] Referring to FIG. 5a, the figure depicts an exploded view of the stack 110 of the component carrier 100, according to a further exemplary embodiment of the present invention. The component carrier 100 also comprises two sub-stacks 112, as FIG. 4a. However, in FIG. 5a, the bottom sub-stack 112 is free from the chemical composition 132 and/or metallic (copper) nanowires 170. The bottom sub-stack 112 comprises an electrically insulating layer structure 130 sandwiched between two adjacent electrically conductive layer structure 120 regarding stacking direction Z. One of the electrically conductive layer structures 120 may be structured, in this case the top electrically conductive layer structure. The sub-stacks 112 may be located such, that the respective electrically conductive layer structures 120 comprising the respective (copper) nanowires 170 provided on the respective at least one first portions 150 of the first sub-stack 112 is facing the structured top electrically conductive layer structure 120 of the other sub-stack 112. In between the sub-stacks 112 regarding stacking direction Z an underfilling material 131 is provided. Additionally or alternatively, an electrically insulating layer structure 130 may be provided between the respective sub-stacks 112. The underfilling material 131 may comprise at least one cut-out portion. Preferably, the cut-out portion may overlap in stacking direction Z with the metallic nanostructures and/or microstructures 170 of the respective sub-stack 112.
[0110] Referring to FIG. 5b, after applying thermal energy and/or elevated pressure, for example larger than 80 C. and/or 1.5 bars, on the stack 110 according to FIG. 4a, a component carrier 100 similar to FIG. 1 is created. In comparison to FIG. 4b, the chemical composition 132 is located only in one level regarding stacking direction Z. The (copper) nanowires 170 of one sub-stack 112 abutting to the opposed electrically conductive layer structure 120 of the other sub-stack 112 may ensure a reliable electrically and/or mechanical connection, since the (copper) nanowires 170 of the one sub-stack 112 may protrude into the opposed electrically conductive layer structure 120 of the other sub-stack 112. Optionally the component carrier 100 may be further processed, for example by a structuring process and/or etching process and/or plating process and/or lamination process.
[0111] FIG. 6a to FIG. 6d illustrate cross-sectional views of structures obtained during carrying out another preferred method of manufacturing a component carrier 100 according to an exemplary embodiment of the second aspect of the invention.
[0112] Referring to FIG. 6a, a component carrier 100 comprising a stack 110 comprising two electrically conductive layer structures 120 and one electrically insulating layer structure 130 is shown, similar to the component carrier 100 shown in FIG. 3a.
[0113] Referring to FIG. 6b, additionally to FIG. 6a a coating layer 136 is provided at at least one surface 140 of the electrically conductive layer structure 120. Additionally or alternatively, an electrically insulating material may be provided at at least one surface 140 of the electrically conductive layer structure 120. Additionally, the coating layer 136 and/or the electrically insulating material may be provided at at least one surface 140 of the electrically insulating layer structure 130. The coating layer 136 and/or the electrically insulating material may be applied by a surface treatment process step and/or a coating step, in particular a screen printing process step. Alternatively, a three-dimensional printing step and/or a dispensing step may be used. In an example, the coating layer 136 and/or the electrically insulating material may be a photo resist, in particular a liquid photo resist. In another example, the a (liquid) photo resist may be applied on the surface 140 of the second portion 160 (only). Preferably, the coating layer 136 and/or the electrically insulating material which was provided to the at least one portion of the surface 140 of the electrically conductive layer structure 120 by for example a coating step may create the at least one second portion 160 and another portion of the surface 140 of the electrically conductive layer structure 120 which was is free from the coating layer 136 and/or the electrically insulating material may create the at least one first portion 150. Thereby, the surface 140 of the electrically conductive layer structure 120 may be divided in at least one first portion 150 and at least one second portion 160. Dividing at least one surface 140 of said at least one electrically conductive layer structure into at least one first portion 150 and at least one second portion 160 may comprise the step of performing the surface treatment process step and/or the coating step to said second portion 160 only. Preferably, the coating layer 136 and/or electrically insulating material may be in direct contact with the main surface of the electrically conductive layer structure 120. Additionally or alternatively, the coating layer 136 and/or electrically insulating material may be in direct contact with the lateral surface of the electrically conductive layer structure 120. In an example the coating layer 136 and/or electrically insulating material may be provided at a portion of an electrically conductive layer structure 120. Additionally or alternatively, the coating layer 136 and/or electrically insulating material may be provided such that the coating layer 136 and/or electrically insulating material may cover an entire surface 140 of one electrically conductive layer structure 120 and/or that the coating layer 136 and/or electrically insulating material is in contact with at least two, in particular two adjacent, electrically conductive layer structures 120.
[0114] Referring to FIG. 6c, in addition to FIG. 6b (copper) nanowires 170 are provided on the surface 140 of the at least one first portion 150. Thereby (copper) nanowires 170 may be grown on the exposed surface 140 of the first portion 150. In an example, the (copper) nanowires 170 may be in direct contact with the coating layer 136 and/or the electrically insulating material, in particular at the lateral surface of the coating layer 136 and/or the electrically insulating material. Alternatively, the (copper) nanowires 170 may be free from direct contact with the coating layer 136 and/or the electrically insulating material. Similar to FIG. 4a, the stack 110 of FIG. 6c comprises an underfilling material 131 located between two sub-stacks 112. Thereby the sub-stacks 112 are located such, that the respective electrically conductive layer structures 120 comprising the respective (copper) nanowires 170 provided on the respective at least one first portions 150 are facing each other. In between the sub-stacks 112 regarding stacking direction Z an underfilling material 131 is provided. Additionally or alternatively, an electrically insulating layer structure 130 may be provided between the respective sub-stacks 112. The underfilling material 131 may comprise at least one cut-out portion. Preferably, the cut-out portion may overlap in stacking direction Z with the (copper) nanowires metallic nanostructures and/or microstructures 170 of the respective sub-stack 112. Preferably, the underfilling material 131 may be different compared to the electrically insulating layer structure 130 in term of material and/or material composition.
[0115] Referring to FIG. 6d, a component carrier 100 is created after applying elevated temperature, for example larger than 80 C., and/or pressure, for example larger than 1.5 bars, to the stack 110 shown in FIG. 6c. The component carrier 100 in FIG. 6d differs from the component carrier 100 in FIG. 4b in that the material of the coating layer 136 is exchanged by the chemical composition 132 and vice versa.
[0116] FIG. 7a to FIG. 7e illustrate cross-sectional views of structures obtained during carrying out a further preferred method of manufacturing a component carrier 100 according to an exemplary embodiment of the second aspect of the invention.
[0117] Referring to FIG. 7a, a component carrier 100 comprising a stack 110 comprising two electrically conductive layer structures 120 and one electrically insulating layer structure 130 is shown, similar to the component carrier 100 shown in FIG. 3a.
[0118] Referring to FIG. 7b, additionally a coating layer 136 is applied on the bottom of the stack 110. Preferably, the coating layer 136 may be in direct contact with the surface 140, in particular the main surface and/or the lateral surface, of the electrically conducting layer structure 120 and/or the main surface of the electrically insulating layer structure 130. In an example, the coating layer 136 may cover the entire bottom (main) surface of the stack 110. Alternatively, a portion of the bottom surface of the stack 110 may be covered by the coating layer 136. In an example, the coating layer 136 may interact with electromagnetic light, in particular a laser beam. In another example, the coating layer 136 may be a photo imageable material, in particular a photo imageable dielectric material. Alternatively, the coating layer 136 may be structure able by another physical and/or chemical process, for example a plasma assisted process.
[0119] Referring to FIG. 7c, the layer of coating layer 136 may be partially removed from at least one portion by a surface treatment process step. Thereby, the surface 140 of the electrically conductive layer structure 120 may be exposed. Additionally, the main surface of the electrically insulating layer structure 130 may be exposed. Preferably, the coating step in combination with the following process treatment step may divide at least one surface 140 of said at least one electrically conductive layer structure 120 into at least one first portion 150 and at least one second portion 160, since the portion of the surface 140 of the electrically conductive layer structure 120 still covered by the coating layer 136 after the surface treatment process may be assigned or associated to the at least one second portion 160 and/or the portion of the surface 140 of the electrically conductive layer structure 120 being free from the coating layer 136 after the surface treatment process may be assigned or associated to the at least one first portion 150.
[0120] Referring to FIG. 7d, in addition to FIG. 7c (copper) nanowires 170 are provided on the surface 140 of the at least one first portion 150. Thereby (copper) nanowires 170 may be grown on the exposed surface 140 of the first portion 150. In an example, the (copper) nanowires 170 may be in direct contact with the coating layer 136, in particular at the lateral surface of the coating layer 136. Alternatively, the (copper) nanowires 170 may be free from direct contact with the coating layer 136. Similar to FIG. 4a, the stack 110 of FIG. 7d comprises an underfilling material 131 located between two sub-stacks 112. Thereby the sub-stacks 112 are located such that, the respective electrically conductive layer structures 120 comprising the respective (copper) nanowires 170 provided on the respective at least one first portions 150 are facing each other. In between the sub-stacks 112 regarding stacking direction Z an underfilling material 131 is provided. Additionally or alternatively, an electrically insulating layer structure 130 may be provided between the respective sub-stacks 112. The underfilling material 131 may comprise at least one cut-out portion. Preferably, the cut-out portion may overlap in stacking direction Z with the (copper) nanowires 170 of the respective sub-stack 112. Preferably, the underfilling material 131 may be different compared to the electrically insulating layer structure 130 in term of material and/or material composition.
[0121] Referring to FIG. 7e, a component carrier 100 is created after applying elevated temperature, for example larger than 80 C., and/or pressure, for example larger than 1.5 bars, to the stack 110 shown in FIG. 7d. The component carrier 100 in FIG. 6d differs from the component carrier 100 in FIG. 4b in that the material of the coating layer 136 is exchanged by the chemical composition 132 and vice versa.
[0122] The component carrier 100 as shown in FIG. 1 or similar to the one shown in FIG. 1 can be manufactured by a combination of the explained process steps described in FIG. 3a to FIG. 3e in combination with FIG. 4a and FIG. 4b and/or FIG. 3a to FIG. 3e in combination with FIG. 5a and FIG. 5b and/or FIG. 6a to FIG. 6d and/or FIG. 7a to FIG. 7e.
[0123] Preferably, FIG. 2, FIG. 4b, FIG. 5b, FIG. 6d and/or FIG. 7e may be further treated by at least one process step, for example an etching process step and/or a galvanic plating step, in order to structure the exposed electrically conductive layer structure 120 (of the exposed main surfaces). Optionally, the exposed electrically conductive layer structure 120 of the stack 110 may comprise a surface finish, for example comprising gold and/or nickel and/or palladium, and/or the exposed electrically insulating layer structure 130 of the stack 110 may comprise a solder resist (see FIG. 1).
[0124] Referring to FIG. 8a, an enlarged view of a micro- and/or nano-porous surface representing the metallic nanostructures and/or micro structures 170 is illustrated according to an exemplary embodiment of the present invention. The micro- and/or nano-porous body may comprise open and/or closed pores. In an example, the extension of the pores may be in range from 10 nm to 10 m, in particular in the range from 50 nm to 1 m. Preferably, the metallic nanostructure and/or microstructures 170 may be nano-porous copper. Alternatively, the metallic nanostructure and/or microstructures 170 may be a nano-porous material being free from copper, for example titanium and/or chromium and/or nickel and/or gold. In another example, the metallic nanostructure and/or microstructures 170 may have an electrical conductivity higher than 10{circumflex over ()}6 S/m. Preferably, the micro- and/or nano-porous body may be suitable to be deformed, in particular when it gets in contact with another micro- and/or nano-porous body and/or an electrically conductive layer structure 120 and/or an electrically insulating layer structure 130. In an example, the micro- and/or nano-porous body may be deformed during a lamination process, when pressure is applied. Nevertheless, the micro- and/or nano-porous body may not break and thus ensure a reliable electrically connection.
[0125] Referring to FIG. 8b, a cross-sectional view of a component carrier 100 is illustrated according to an exemplary embodiment of the present invention where the metallic nanostructures and/or microstructures 170 comprise metallic nanowires, in particular copper nanowires. The component carrier 100 may be a magnified view of a component carrier 100 similar to FIG. 1, wherein an electrically conductive layer structure 120 comprising a surface 140 having a first portion 150 is shown in detail. On the surface 140 of the first portion 150 a plurality of (copper) nanowires 170 are provided. Preferably, the (copper) nanowires 170 may be grown on the first portion 150 according the second aspect of the current invention. Thereby the (copper) nanowires 170 may be in direct contact with the electrically conductive layer structures 120 and/or with each other.
[0126] Referring to FIG. 8c, a cross-sectional view of a component carrier 100 is illustrated according to an exemplary embodiment of the present invention. The component carrier 100 may be another magnified view of a component carrier similar to FIG. 1, wherein the component carrier 100 comprising a stack 110 comprising two adjacent electrically conductive layer structures 120 is shown in detail. Each respective electrically conductive layer structure 120 comprises a surface 140 comprising a first portion 150, wherein on each respective first portion 150 (copper) nanowires 170 are provided. The respective (copper) nanowires 170 are located such that they are facing each other. Moreover, the respective (copper) nanowires 170 are intermingled with each other. This may be a result of creating the component carrier 100 according to the second aspect of the present invention, in particular providing elevated temperatures and/or elevated pressure during a manufacturing step. The intermingled (copper) nanowires 170 may ensure a reliable mechanical and/or electrical connection between the adjacent two respective electrically conductive layer structures 120.
[0127] It should be noted that the term comprising does not exclude other elements or steps and the a or an does not exclude a plurality. Also, elements described in association with different embodiments may be combined.
[0128] Implementation of the invention is not limited to the preferred embodiments shown in the figures and described above. Instead, a multiplicity of variants is possible which use the solutions shown and the principle according to the invention, whose scope is defined by the appended claims.
LIST OF REFERENCE SIGNS
[0129] 100 component carrier [0130] 110 stack [0131] 111 zoom of stack [0132] 112 sub-stack [0133] 120 electrically conductive layer structure [0134] 130 electrically insulating layer structure [0135] 131 protecting material, underfilling material [0136] 132 chemical composition [0137] 136 coating layer [0138] 139 temporary electrically insulating layer [0139] 140 surface of electrically conductive layer structure [0140] 150 first portion [0141] 152 further first portion [0142] 160 second portion [0143] 162 further second portion [0144] 170 metallic nanostructures and/or microstructures, nanowires [0145] 180 first sub-carrier [0146] 182 second sub-carrier [0147] 190 distancing element [0148] 192 component [0149] Z thickness direction.
