Auxiliary Power Supply Apparatus and Method for Isolated Power Converters
20230133307 · 2023-05-04
Inventors
Cpc classification
H02M3/33573
ELECTRICITY
H02M1/08
ELECTRICITY
Y02B70/10
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
H02M1/08
ELECTRICITY
Abstract
An apparatus includes a controller configured to generate a PWM signal for controlling a power switch of a forward converter, a bias switch and a bias capacitor connected in series and coupled to a bias winding of the forward converter, and a comparator having a first input connected to the bias capacitor, a second input connected to a predetermined reference and an output configured to generate a signal for controlling the bias switch to allow a magnetizing current from the bias winding to charge the bias capacitor when a voltage across the bias capacitor is less than the predetermined reference.
Claims
1-20. (canceled)
21. An apparatus comprising: a controller configured to generate a PWM signal for controlling a power switch of a forward converter; a bias switch and a bias capacitor connected in series and coupled to a bias winding of the forward converter; and a comparator having a first input connected to the bias capacitor, a second input connected to a predetermined reference and an output configured to generate a signal for controlling the bias switch to allow a magnetizing current from the bias winding to charge the bias capacitor when a voltage across the bias capacitor is less than the predetermined reference.
22. The apparatus of claim 21, further comprising: a diode connected in series with the bias switch, wherein: an anode of the diode is connected to the bias winding; and a cathode of the diode is connected to the bias switch.
23. The apparatus of claim 22, wherein: the bias switch is an n-type transistor, and wherein: a source of the bias switch is connected to the diode; and a drain of the bias switch is connected to the bias capacitor.
24. The apparatus of claim 21, further comprising: a first logic gate and a first buffer, wherein: a first input of the first logic gate is connected to the output of the comparator; a second input of the first logic gate is configured to receive the PWM signal for controlling the power switch through a first inverter; an input of the first buffer is connected to an output of the first logic gate; and an output of the first buffer is connected to a gate of the bias switch.
25. The apparatus of claim 24, wherein: the first logic gate is an AND gate; and the first buffer is a level shifter.
26. The apparatus of claim 21, further comprising: a second logic gate and a second buffer, wherein: a first input of the second logic gate is configured to receive the PWM signal for controlling the power switch; a second input of the second logic gate is connected to the output of the comparator through a second inverter; an input of the second buffer is connected to an output of the second logic gate; and an output of the second buffer is connected to a gate of the power switch.
27. The apparatus of claim 26, wherein: the second logic gate is an AND gate; and the second buffer is a gate driver.
28. The apparatus of claim 21, wherein: the forward converter comprises a primary winding, the power switch and a sense resistor connected in series between an input power source and ground; and a reset circuit connected between the input power source and a common node of the primary winding and the power switch.
29. The apparatus of claim 28, wherein: the reset circuit is a RCD reset device comprising a reset diode, a reset capacitor and a reset resistor, and wherein: the reset capacitor and the reset resistor are connected in parallel between the input power source and the reset diode; an anode of the reset diode is connected to the common node of the primary winding and the power switch; and a cathode of the reset diode is connected to the reset capacitor and the reset resistor.
30. The apparatus of claim 28, further comprising: a secondary winding magnetically coupled to the primary winding; a synchronous rectifier coupled to the secondary winding; and an L-C filter coupled to the synchronous rectifier.
31. A method comprising: detecting a voltage across a bias capacitor of a forward converter; comparing, by a comparator, the voltage across the bias capacitor with a predetermined threshold; turning on a bias switch connected in series with the bias capacitor so as to make a magnetizing current charge the bias capacitor when the voltage across the bias capacitor is less than the predetermined threshold; and turning off the bias switch after the voltage across the bias capacitor is greater than another predetermined threshold.
32. The method of claim 31, further comprising: generating a PWM signal for controlling a power switch of the forward converter; and turning on the bias switch immediately after the power switch has been turned off.
33. The method of claim 32, further comprising: after turning off the bias switch, configuring a resetting circuit to reset the forward converter.
34. The method of claim 31, wherein: the forward converter comprises a transformer having a bias winding, a primary winding and a secondary winding and a power switch connected in series with the primary winding.
35. The method of claim 34, wherein: the bias switch and the bias capacitor are connected in series and coupled to the bias winding of the forward converter.
36. The method of claim 35, further comprising: a comparator having a first input connected to the bias capacitor, a second input connected to the predetermined reference and an output configured to generate a signal for controlling the bias switch to allow the magnetizing current to charge the bias capacitor when the voltage across the bias capacitor is less than the predetermined reference.
37. A system comprising: an inductor and a power switch connected in series; a first bias switch and a first bias capacitor connected in series and coupled to a common node of the inductor and the power switch; a first comparator having a first input connected to the first bias capacitor, a second input connected to a first predetermined reference and an output configured to generate a signal for controlling the first bias switch to allow a magnetizing current from the inductor to charge the first bias capacitor when a voltage across the first bias capacitor is less than the first predetermined reference; a second bias switch and a second bias capacitor connected in series and coupled to a common node of the inductor and the power switch; and a second comparator having a first input connected to the second bias capacitor, a second input connected to a second predetermined reference and an output configured to generate a signal for controlling the second bias switch to allow the magnetizing current from the inductor to charge the second bias capacitor when a voltage across the second bias capacitor is less than the second predetermined reference.
38. The system of claim 37, further comprising: a first level shifter connected between the output of the first comparator and a gate of the first bias switch; and a second level shifter connected between the output of the second comparator and a gate of the second bias switch.
39. The system of claim 37, further comprising: a first diode connected between the first bias switch, and the common node of the inductor and the power switch; and a second diode connected between the second bias switch, and the common node of the inductor and the power switch.
40. The system of claim 39, wherein: an anode of the firs diode and an anode of the second diode are connected to the common node of the inductor and the power switch; a cathode of the first diode is connected to the first bias switch; and a cathode of the second diode is connected to the second bias switch.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] For a more complete understanding of the present disclosure, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
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[0040] Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the various embodiments and are not necessarily drawn to scale.
DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
[0041] The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the disclosure, and do not limit the scope of the disclosure.
[0042] The present disclosure will be described with respect to preferred embodiments in a specific context, namely an auxiliary power supply employed in a switching power converter. The disclosure may also be applied, however, to a variety of isolated power converters including half bridge converters, full bridge converters, flyback converters, forward converters, push-pull converters, inductor-inductor-capacitor (LLC) resonant converter and the like. Furthermore, the disclosure may also be applied to a variety of non-isolated power converters such as four switch buck boost converters and the like. Hereinafter, various embodiments will be explained in detail with reference to the accompanying drawings.
[0043]
[0044] It should be noted that as indicated by a dashed line A-A′, the left side of the dashed line including the input dc source VIN, the input filter 101 and the primary side network 102 is commonly referred to as the primary side of the switching power converter 100. On the other hand, the right side of the dashed line A-A′ including the rectifier 106 and the output filter 107 is commonly referred to as the secondary side of the switching power converter 100. Furthermore, as shown in
[0045] The primary side network 102 is coupled to the input dc source VIN through the input filter 101. Depending on different power converter topologies, the primary side network 102 may comprise different combinations of switches as well as passive components. For example, the primary side network 102 may comprise four switching elements connected in a bridge configuration when the switching power converter 100 is a full bridge power converter. On the other hand, when the switching power converter 100 is an LLC resonant converter, the primary side network 102 may comprise a high side switching element and a low side switching element connected in series, and a resonant tank formed by an inductor and a capacitor connected in series.
[0046] Furthermore, when the switching power converter 100 is a forward converter (e.g., an active clamp forward converter), the primary side network 102 may comprise a primary switch and an active clamp reset device formed by an auxiliary switch and a clamp capacitor. Moreover, the switching power converter 100 may be a flyback converter. The primary side network 102 may comprise a primary switch and a reset device formed by a clamp capacitor, a resistor and a diode.
[0047] The switching elements of the primary side network 102 may be formed by any suitable devices such as metal oxide semiconductor field effect transistor (MOSFET) devices, bipolar junction transistor (BJT) devices, super junction transistor (SJT) devices, insulated gate bipolar transistor (IGBT) devices and the like.
[0048] It should be noted that one of ordinary of skill in the art would realize that the switching power converter 100 as well as its corresponding primary side network 102 may be implemented in many different ways. It should further be noted that the power converter topologies discussed herein are provided for illustrative purposes only, and are provided only as examples of various embodiments.
[0049] The input filter 101 may comprise an inductor coupled between the input dc source VIN and the primary side network 102. The input filter 101 may further comprise a plurality of input capacitors. The inductor provides high impedance when switching noise tries to flow out of the primary side network 102. At the same time, the input capacitors shunt the input of the switching power converter 100 and provide a low impedance channel for the switching noise generated from the primary side network 102. As a result, the switching noise of the switching power converter 100 may be prevented from passing through the input filter 101. The structure and operation of the input filter of an isolated dc/dc converter are well known in the art, and hence are not discussed in further detail.
[0050] The transformer 104 provides electrical isolation between the primary side and the secondary side of the switching power converter 100. In accordance with some embodiments, the transformer 104 may be formed of two transformer windings, namely a primary transformer winding and a secondary transformer winding. Alternatively, the transformer 104 may have a center tapped secondary so as to have three transformer windings including a primary transformer winding, a first secondary transformer winding and a second secondary transformer winding. Moreover, the transformer may comprise a plurality of bias windings.
[0051] It should be noted that the transformers illustrated herein and throughout the description are merely examples, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. For example, the transformer 104 may further comprise a variety of gate drive auxiliary windings and the like.
[0052] The rectifier 106 converts an alternating polarity waveform received from the output of the transformer 104 to a single polarity waveform. The rectifier 106 may be formed of a pair of switching elements such as NMOS transistors. Alternatively, the rectifier 106 may be formed of a single switching element. Furthermore, the rectifier 106 may be formed by other types of controllable devices such as metal oxide semiconductor field effect transistor (MOSFET) devices, bipolar junction transistor (BJT) devices, super junction transistor (SJT) devices, insulated gate bipolar transistor (IGBT) devices and the like. The detailed operation and structure of the rectifier 106 are well known in the art, and hence are not discussed herein.
[0053] The output filter 107 is employed to attenuate the switching ripple of the switching power converter 100. According to the operation principles of switching power converters, the output filter 107 may be an L-C filter formed by an inductor and a plurality of capacitors. One person skilled in the art will recognize that some switching power converter topologies such as forward converters and full bridge converters may require an L-C filter. On the other hand, some switching power converter topologies such as flyback converters and LLC resonant converters may include an output filter formed by a capacitor or a plurality of capacitors connected in parallel. One person skilled in the art will further recognize that different output filter configurations apply to different power converter topologies as appropriate. The configuration variations of the output filter 107 are within various embodiments of the present disclosure.
[0054]
[0055] In accordance with an embodiment, the primary side controller 112 may employ a peak current mode control mechanism to generate the gate drive signals based upon the comparison between a detected output voltage and a sensed current signal. Alternatively, the primary side controller 112 may employ a voltage mode control mechanism to generate the gate drive signals based upon the detected output voltage. However, as one having ordinary skill in the art will recognize, the control mechanisms described above are merely exemplary methods and are not meant to limit the current embodiments. Other control mechanisms, such as average current mode control scheme may alternatively be used. Any suitable control mechanisms may be used, and all such control mechanisms are fully intended to be included within the scope of the embodiments discussed herein.
[0056]
[0057] The primary switch S.sub.M is connected between the primary winding N.sub.P and a current sense resistor R.sub.CS. The current sense resistor R.sub.CS is further connected to ground as shown in
[0058] As shown in
[0059] In accordance with some embodiments, the primary switch S.sub.M is an n-type metal-oxide-semiconductor field-effect transistor (MOSFET) device. The clamp capacitor C.sub.RCD is a 0.1 uF ceramic capacitor. The resistance value of the resistor R.sub.RCD is in a range from about 1 Kohms to about 10 Kohms.
[0060] The primary side controller 112 may receive a plurality of signals such as a feedback signal VFB through an isolation device (not shown) placed between the primary side and the secondary side, a current sense signal CS detected from the current sense resistor R.sub.CS, and an input voltage signal as shown in
[0061] In accordance with some embodiments, the secondary rectifier 106 is formed by a synchronous switch S.sub.SR. The synchronous switch S.sub.SR may be an n-type MOSFET device. It should be noted that the synchronous rectifier may be formed by other switching elements such as BJT devices, SJT devices, IGBT devices and the like. It should further be noted that while
[0062] As shown in
[0063] According to the operation principles of flyback converters, when the input voltage source VIN is applied to the primary side winding N.sub.p of the transformer T1 through the turn-on of the primary switch S.sub.M, the polarity of the secondary side winding N.sub.s of the transformer T1 is so configured that the synchronous switch SSR is turned off and the load (not shown) connected to the flyback converter is supplied by the energy stored in the output capacitor C.sub.0. On the other hand, when the primary side switch S.sub.M is turned off and the synchronous switch S.sub.SR is turned on, the energy stored in the transformer is transferred to the load through the turned-on synchronous switch S.sub.SR. The detailed operation of the secondary side of the flyback converter is well known in the art, and hence is not discussed in further detail herein.
[0064]
[0065] As shown in
[0066] As shown in
[0067] The switch S.sub.VDDP is employed to control the charge of the capacitor C.sub.VDDP. In particular, the capacitor C.sub.VDDP is charged only when it is necessary. For example, when the bias voltage VDDP is lower than a first predetermined threshold, the switch S.sub.VDDP is turned on and the capacitor C.sub.VDDP is charged by the bias winding N.sub.b through the diode D.sub.VDDP and the turned-on switch S.sub.VDDP. Once the bias voltage VDDP reaches a second predetermined threshold, the switch S.sub.VDDP is turned off accordingly. In some embodiments, the second predetermined threshold is greater than the first predetermined threshold.
[0068] The control circuit portion includes a comparator U1, a logic gate U2 and a level shifter U3. The non-inverting input of the comparator U1 is connected to a predetermined reference Vref. The inverting input of the comparator U1 is configured to receive the bias voltage VDDP.
[0069] The logic gate U2 is an AND gate. A first input of the logic gate U2 is connected to the output of the comparator U1. A second input of the logic gate U2 is configured to receive the primary switch's gate drive signal through an inverter. The circle placed at the second input of the logic gate U2 indicates the signal applied to the second input of the logic gate U2 is a signal inverted from G.sub.PRI. In other words, the signal applied to the second input of the logic gate U2 and the primary switch's gate drive signal G.sub.PRI are two complementary signals.
[0070] In operation, when the primary switch S.sub.M is turned on, the signal applied to the second input of the logic gate U2 is a logic low signal. Such a logic low signal overrides the signal from the comparator U1, leaving the output of the logic gate U2 at a logic level of 0. As a result, the bias switch S.sub.VDDP is turned off. According to the logic circuit configuration shown in
[0071] It should be noted that the comparator U1 is a hysteretic comparator. The predetermined reference Vref includes a low threshold and a high threshold. When the bias voltage drops below the low threshold, the bias switch S.sub.VDDP is turned on and the magnetizing current from the bias winding N.sub.b charges the bias capacitor C.sub.VDDP. The bias switch S.sub.VDDP remains on until the bias voltage VDDP reaches the high threshold. The detailed operation principle of the hysteretic comparator will be described below with respect to
[0072] It should further be noted that while
[0073] As shown in
[0074] One advantageous feature of having the bias power supply shown in
[0075]
[0076] At time t1, the primary side switch S.sub.M is turned on. As a result of turning on the primary side switch S.sub.M, the magnetizing current ramps up from time t1 until time 2 when the primary side switch S.sub.M is turned off. From time t1 to time t2, the bias voltage VDDP drops as shown in
[0077] The comparator U1 shown in
[0078] At time t2, the bias voltage drops below the lower threshold VREFL and the primary side switch S.sub.M is turned off, the bias switch S.sub.VDDP is turned on as indicated by the gate drive signal G.sub.VDDP. In response to the turned-on bias switch S.sub.VDDP, the magnetizing current from the bias winding N.sub.b starts to charge the bias capacitor C.sub.VDDP and the bias voltage VDDP increases in a linear manner as shown in
[0079] At time t3, the bias voltage reaches the upper threshold VREFH, the output of the comparator U1 transitions from a logic high state to a logic low state. In response to this logic state change, the bias switch S.sub.VDDP is turned off at time t3 as indicated by the gate drive signal G.sub.VDDP. During the time interval from t2 to t3, the magnetizing current is partially reset by the bias voltage VDDP. The magnetizing current is of a slope of −VDDP/L.sub.M, where L.sub.M is the magnetizing inductance of the transformer T1.
[0080] During the time interval from t3 to t4, the magnetizing current is reset by the RCD reset device. The magnetizing current i.sub.LM decreases in a linear manner as shown in
[0081] In order to have the magnetizing current timing sequence (from t2 to t4) shown in
[0082]
[0083]
[0084] As shown in
[0085] The switch S.sub.VDDP is employed to control the charge of the capacitor C.sub.VDDP. In particular, the capacitor C.sub.VDDP is charged only when it is necessary. For example, when the bias voltage VDDP is lower than a predetermined reference Vref, the switch S.sub.VDDP is turned on and the capacitor C.sub.VDDP is charged by the magnetizing current through the diode D.sub.VDDP and the turned-on switch S.sub.VDDP. Once the bias voltage VDDP is above the predetermined reference Vref, the switch S.sub.VDDP is turned off accordingly.
[0086] The control circuit portion includes a comparator U1, a first logic gate U2 and a level shifter U3 and a second logic gate U4. In some embodiments, the comparator U1 is a hysteretic comparator. Both the first logic gate U2 and the second logic gate U4 are AND gates. The non-inverting input of the comparator U1 is connected to the predetermined reference Vref. The inverting input of the comparator U1 is configured to receive the bias voltage VDDP.
[0087] A first input of the first logic gate U2 is connected to the output of the comparator U1. A second input of the first logic gate U2 is configured to receive a PWM signal generated by the primary side controller 112.
[0088] A first input of the second logic gate U4 is connected to the output of the comparator U1 through an inverter. The circle placed at the first input of the second logic gate U4 indicates the signal applied to the first input of the second logic gate U4 is a signal inverted from the signal generated by the comparator U1. A second input of the second logic gate U4 is configured to receive the PWM signal generated by the primary side controller 112.
[0089] In operation, the PWM signal generated by the primary side controller 112 is applied to both the primary switch S.sub.M and the bias switch S.sub.VDDP. If the bias voltage VDDP is lower than a predetermined reference Vref, the comparator U1 generates a logic high state. After passing through an inverter (the circle attached to the second logic gate U4), the signal applied to the first input of the second logic gate U4 is a logic low signal. Such a logic low signal overrides the PWM signal applied to the second logic gate U4, leaving the output of the second logic gate U4 at a logic low state. As a result, despite that the PWM signal is applied to both switches, the control circuit turns on the bias switch S.sub.VDDP before turning on the primary switch S.sub.M when charging the bias capacitor C.sub.VDDP is necessary. The primary switch S.sub.M remains off until the bias switch S.sub.VDDP has been turned off. The detailed timing diagram of controlling the bias power supply shown in
[0090] One advantageous feature of having the bias power supply shown in
[0091]
[0092] The snubber shown in
[0093]
[0094] At time t1, after the bias voltage reaches the lower threshold VREFL, the output of the comparator U1 transitions from a logic low state to a logic high state. At the same time, the PWM signal is applied to both the primary switch S.sub.M and the bias switch S.sub.VDDP. Both the PWM signal and the output of the comparator U1 have a logic high state. As a result, the first logic gate U2 generates a logic high signal, which is used to turn on the bias switch S.sub.VDDP through the level shifter U3. As shown in
[0095] In response to the turned-on bias switch S.sub.VDDP, the magnetizing current of the transformer T1 charges the bias capacitor C.sub.VDDP in a linear manner from t1 to t2. During the time interval from t1 to t2, the magnetizing current is of a slope of (VIN−VDDP)/L.sub.M, where L.sub.M is the magnetizing inductance of the transformer T1. During the time interval from t1 to t2, the primary switch S.sub.M remains off as shown in
[0096] At time t2, after the bias voltage VDDP reaches VREFH, the output of the comparator U1 transitions from a logic high state to a logic low state. In response to this logic state change, the bias switch S.sub.VDDP is turned off and the primary side switch S.sub.M is turned on. As a result of turning on the primary side switch S.sub.M, the magnetizing current ramps up from t2 to t3 until the primary side switch S.sub.M is turned off. During the time interval from t2 to t3, the magnetizing current is of a slope of VIN/L.sub.M. During the time interval from t3 to t5, the timing diagram of
[0097] It should be noted
[0098]
[0099] In operation, when the bias voltage VDDP is greater than the predetermined reference Vrefs, the comparator U1 generates a logic low signal. Such a logic low signal pulls the gate of the JFET S.sub.JFET to ground through the buffer U2. As a result of pulling the gate to ground, the gate-source voltage of the JFET S.sub.JFET is a negative voltage, thereby turning off the JFET S.sub.JFET.
[0100] During a startup process of the flyback converter 600, the gate-source voltage of the JFET S.sub.JFET is approximately equal to zero. According to the operating principle of depletion mode JFET transistors, the JFET S.sub.JFET is on and the input voltage VIN is applied to the gate of the bias switch S.sub.VDDP through the resistor R.sub.VDDDP and the turned-on JFET S.sub.JFET. The gate voltage of the bias switch S.sub.VDDP is clamped by the Zener diode D.sub.Z. In some embodiments, the Zener diode D.sub.Z clamps the gate voltage of the bias switch S.sub.VDDP to a level approximately equal to two times the bias voltage VDDP.
[0101] One advantageous feature of having the bias power supply shown in
[0102] It should be noted the JFET S.sub.JFET and its control circuit (e.g., U1 and U2) can be removed so as to simplify the design of the bias power supply. For example, the resistor R.sub.VDDDP may be connected to the Zener diode D.sub.Z directly to establish a voltage for driving the bias switch S.sub.VDDP. This variation of the bias power supply is within the scope of the claims.
[0103]
[0104] It should be noted that the system configuration shown in
[0105] It should further be noted the bias switch S.sub.VDDP is implemented as a p-type MOSFET. This implementation is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. For example, the bias switch S.sub.VDDP is implemented as an n-type MOSFET. In order to drive the n-type MOSFET, the driver (e.g., U8) of the n-type MOSFET is a buffer rather than an inverter. Furthermore, the driver may include a level shifter because the source of the n-type MOSFET is not connected to ground.
[0106] The control circuit of the main switch S.sub.M includes a first comparator U1, a first buffer U2, a level shifter U3, a depletion mode JFET S.sub.JFET, a Zener diode D.sub.Z and an OR gate U9. The control circuit portion of the bias power supply includes a second comparator U4, a first logic gate U5, a second logic gate U6, a second butter U7 and an inverter U8. As shown in
[0107] During a startup process of the flyback converter 700, the depletion mode JFET S.sub.JFET is turned on because the initial voltage applied to the gate-source of the depletion mode JFET S.sub.JFET is approximately equal to zero. The input voltage VIN is applied to the gate of the main switch S.sub.M through the turned-on JFET S.sub.JFET and the resistor R.sub.VDDDP. The gate voltage of the main switch S.sub.M is clamped by the Zener diode D.sub.Z. In response to the voltage applied to the gate of the main switch S.sub.M, the main switch S.sub.M is turned on.
[0108] During the startup process, the bias voltage VDDP is below the predetermined reference Vref. The second comparator U4 generates a logic high signal. The logic high signal becomes a logic low signal after passing the second logic gate U6 and the inverter U8. The logic low signal pulls down the gate of the bias switch S.sub.VDDP, thereby turning on the bias switch S.sub.VDDP. The magnetizing current of the transformer T1 starts to charge the bias capacitor C.sub.VDDP until the bias voltage VDDP reaches the predetermined reference Vref.
[0109] It should be noted the comparator U4 is a hysteretic comparator. The predetermined reference Vref includes two different voltage thresholds.
[0110] After the startup process of the flyback converter 700 finishes and the bias voltage has been established, the bias voltage VDDP is greater than a predetermined reference Vrefs. The first comparator U1 generates a logic low signal, which is able to turn off the depletion mode JFET S.sub.JFET to avoid unnecessary power losses.
[0111] In operation, the turn-on time of the bias switch S.sub.VDDP is in synchronization with the PWM signal. In particular, when the PWM signal has a logic low state, the comparison result from the second comparator U4 is overridden by the PWM signal at the second logic gate U6. On the other hand, when the PWM signal has a logic high state, the comparison result from the second comparator U4 can be applied to the bias switch S.sub.VDDP through the inverter U8. When the bias voltage VDDP is below the predetermined reference Vref and charging the bias capacitor C.sub.VDDP is necessary, the bias switch S.sub.VDDP is turned on. The detailed timing diagram of controlling the bias power supply shown in
[0112] It should be noted the JFET S.sub.JFET and its control circuit (e.g., U1 and U2) shown in
[0113]
[0114] At time t1, after the bias voltage VDDP reaches the lower threshold VREFL, the output of the comparator U4 transitions from a logic low state to a logic high state. At the same time, the PWM signal is applied to the primary switch S.sub.M, the current sense switch S.sub.SENSE and the bias switch S.sub.VDDP. At time t, the primary switch S.sub.M is turned on. Since the output of the comparator U4 has a logic high state, the current sense switch S.sub.SENSE remains off from t1 to t2 because the signal applied to the current sense switch S.sub.SENSE is a logic low signal after the output signal of the comparator U4 passes through an inverter (the circle attached to the logic gate U5) as shown in
[0115] Also at time t1, the output signal of the comparator U4 passes through the logic gate U6 and the inverter U8 and becomes a logic low signal. The bias switch S.sub.VDDP, as a p-type MOSFET, is turned on by this logic low signal. The bias switch S.sub.VDDP remains on until t2 when the bias voltage VDDP reaches the high reference VREFH. During the time interval from t1 to t2, the magnetizing current is of a slope of (VIN−VDDP)/L.sub.M, where L.sub.M is the magnetizing inductance of the transformer T1.
[0116] At time t2, the output of the comparator U4 transitions from a logic high state to a logic low state. In response to this logic change, the signal applied to the gate of the current sense switch S.sub.SENSE becomes a logic high signal, which turns on the current sense switch S.sub.SENSE. During the time interval from t2 to t3, both the primary switch S.sub.M and the sense switch current sense switch S.sub.SENSE are turned on. The magnetizing current is of a slope of VIN/L.sub.M. During the time interval from t3 to t5, the timing diagram in
[0117]
[0118] As shown in
[0119] The switch S.sub.VDDS is employed to control the charge of the capacitor C.sub.VDDS. In particular, the capacitor C.sub.VDDS is charged only when it is necessary. For example, when the bias voltage VDDS is lower than a predetermined reference Vref, the switch S.sub.VDDS is turned on. The magnetizing current from the secondary winding N.sub.s is diverted to charge the capacitor C.sub.VDDS through a conductive path formed by the diode D2 and the turned-on switch S.sub.VDDS. Once the bias voltage VDDS is above the predetermined reference Vref, the switch S.sub.VDDS is turned off accordingly.
[0120] The control circuit portion includes a comparator U1 and a level shifter U2. The non-inverting input of the comparator U1 is connected to the predetermined reference Vref. The inverting input of the comparator U1 is configured to receive the bias voltage VDDS. It should be noted the comparator U1 is a hysteretic comparator. The predetermined reference Vref includes two different voltage thresholds.
[0121] As shown in
[0122] It should be noted the bias supply shown in
[0123]
[0124] It should be noted in
[0125]
[0126] The secondary side of the forward converter 100 comprises a synchronous rectifier and an output filter. The synchronous rectifier comprises a first switch S.sub.SCR1 and a second switch S.sub.CR2. The output filter comprises an output inductor Lo and an output capacitor Co as shown in
[0127] The switches of the synchronous rectifier may be formed by any suitable devices such as metal oxide semiconductor field effect transistor (MOSFET) devices, bipolar junction transistor (BJT) devices, super junction transistor (SJT) devices, insulated gate bipolar transistor (IGBT) devices and the like.
[0128]
[0129] The bias power supply shown in
[0130] It should be noted that the bias power supplies described above in
[0131] It should further be noted the power converters in
[0132]
[0133]
[0134] The switching converter 1100 comprises a magnetic device L1. As shown in
[0135] The bias power supply generates two bias voltages, namely a low bias voltage VDDL and a high bias voltage VDDH. In some embodiments, the values of the low bias voltage VDDL and the high bias voltage VDDH are determined by references VrefL and VrefH respectively. Both VrefL and VrefH are predetermined and may vary depending on different applications and design needs.
[0136] The switch S.sub.M, the diode D.sub.VDD and the bias switch S.sub.VDD are connected in a manner similar to that shown in
[0137] A second switch S.sub.H and a second capacitor C.sub.H are connected in series between the bias switch S.sub.VDD and ground. The high bias voltage VDDH is established at the common node of the second switch S.sub.H and the second capacitor C.sub.H. The gate of the second switch S.sub.H is controlled by a second control circuit formed by a second comparator U10, a second logic gate U2 and a second inverter U8. In some embodiments, the second logic gate U2 is an AND gate.
[0138] The operating principle of the first control circuit is similar to that of the second control circuit except that the output of the first comparator U9 can override the output of the second comparator U10. In other words, when both the voltages of the bias capacitors C.sub.L and C.sub.H are lower than their respective references VrefL and VrefH, the charges of the bias capacitors C.sub.L and C.sub.H are applied sequentially. According to the logic circuit shown in
[0139] It should be noted that the charge sequence used in
[0140] As shown in
[0141] It should be noted
[0142]
[0143] It should be noted
[0144] It should further be noted a blocking diode D.sub.VDD1 is connected between the switch S.sub.L, and the common node of the main switch S.sub.M and the sense switch S.sub.SENSE. The blocking diode D.sub.VDD1 is employed to prevent the capacitor C.sub.L from being discharged when the voltage at the common node of the main switch S.sub.M and the sense switch S.sub.SENSE is lower than the voltage of the capacitor C.sub.L.
[0145] One advantageous feature of having the configuration shown in
[0146]
[0147] One advantageous feature of having the second blocking diode D.sub.VDD2 is the capacitors C.sub.L and C.sub.H can be independently charged through the extra diode. In other words, it not necessary to consider the charge sequence between the capacitors C.sub.L and C.sub.H.
[0148] It should be noted
[0149]
[0150] The bias power supply includes two bias voltages, namely a first bias voltage VDD1 and a second bias voltage VDD2. The values of the first bias voltage VDD1 and the second bias voltage VDDH are determined by references Vref1 and Vref2 respectively. Both Vref1 and Vref2 are predetermined and may vary depending on different applications and design needs.
[0151] In order to establish two bias voltages, two diode-switch-capacitor networks are connected to the common node of the inductor and the switch S.sub.M. A first diode D1, a first switch S1 and a first capacitor C1 are connected in series between the common node of the inductor and the switch S.sub.M, and ground. The first bias voltage VDD1 is established at the common node of the first switch S1 and the first capacitor C1. The gate of the first switch S1 is controlled by a first control circuit formed by a first comparator U11 and a first level shifter U12.
[0152] A second diode D2, a second switch S2 and a second capacitor C2 are connected in series between the common node of the inductor and the switch S.sub.M, and ground. The second bias voltage VDD2 is established at the common node of the second switch S2 and the second capacitor C2. The gate of the second switch S2 is controlled by a second control circuit formed by a second comparator U21 and a second level shifter U22.
[0153] The operating principle of the first control circuit and the second control circuit shown in
[0154] It should be noted both the first diode D1 and the second diode D2 function as blocking diodes. One advantageous feature of having two blocking diode is the capacitors C1 and C2 can be independently charged through these two blocking diodes. In other words, it not necessary to consider the charge sequence between the capacitors C1 and C2.
[0155] It should further be noted the two bias voltages shown in
[0156]
[0157] The primary side bias power supply includes two bias voltages, namely a first bias voltage VDD1 and a second bias voltage VDD2. The second bias power supply includes one bias voltage, namely a secondary bias voltage VDDS. The operating principle of the primary side bias power supply is similar to that described above with respect to
[0158] It should be noted that the bias power supply configuration shown in
[0159] One advantageous feature of having the bias power supplies shown in
[0160] For an isolated power converter, the multiple bias power supplies can be placed at a primary side of the power converter (e.g., the bias power supplies shown in
[0161]
[0162] Referring back to
[0163] At step 2002, the comparator U1 is used to detect a voltage across the bias capacitor. As shown in
[0164] At step 2004, the detected bias capacitor voltage is compared with a first predetermined threshold. At step 2006, if the detected bias voltage is less than the first predetermined threshold, the bias switch is turned on immediately after a main switch has been turned off and a magnetizing current charges the bias capacitor.
[0165] At step 2008, the magnetizing current keeps charging the bias capacitor until the bias voltage is over a second predetermined threshold. In some embodiments, the second predetermined threshold is greater than the first predetermined threshold.
[0166]
[0167] Referring back to
[0168] At step 2102, the comparator is used to detect a voltage across the bias capacitor. As shown in
[0169] At step 2104, the detected bias capacitor voltage is compared with a first predetermined threshold. At step 2106, if the detected bias voltage is less than the first predetermined threshold, the bias switch is turned on and a magnetizing current charges the bias capacitor. During the time interval of turning on the bias switch, the main switch remains off.
[0170] At step 2108, the magnetizing current keeps charging the bias capacitor until the bias voltage is over a second predetermined threshold. In some embodiments, the second predetermined threshold is greater than the first predetermined threshold. The main switch is turned on immediately after the bias switch has been turned off.
[0171]
[0172]
[0173] The snubber 2200 is employed to reduce the turn-off ringing overshoot across the bias switch S.sub.VDD. Depending on different applications and design needs, the values of the capacitor C.sub.RC and the resistor R.sub.RC are selected accordingly.
[0174] It should be noted that the n-type bias switch shown in
[0175]
[0176] The snubber 2300 is employed to reduce the turn-off ringing overshoot across the bias switch S.sub.VDD. Depending on different applications and design needs, the values of the capacitor C.sub.RC and the resistor R.sub.RC are selected accordingly.
[0177]
[0178] The snubber 2400 is employed to slow down the turn-off ringing overshoot across the bias switch S.sub.VDD. Depending on different applications and design needs, the value of the capacitor C.sub.C is selected accordingly.
[0179]
[0180] At time t1, the primary side switch S.sub.M is turned on. As a result of turning on the primary side switch S.sub.M, the magnetizing current ramps up from time t1 until time 2 when the primary side switch S.sub.M is turned off. From time t1 to time t2, the bias voltage VDDP drops as shown in
[0181] At time t2, the primary side switch S.sub.M is turned off. From t2 to t3, the magnetizing current is reset by the RCD reset device shown in
[0182] At time t3, the bias voltage drops below the lower threshold VREFL, the bias switch S.sub.VDDP is turned on as indicated by the gate drive signal G.sub.VDDP. In response to the turned-on bias switch S.sub.VDDP, the magnetizing current from the bias winding N.sub.b starts to charge the bias capacitor C.sub.VDDP and the bias voltage VDDP increases in a linear manner as shown in
[0183] At time t4, the bias voltage reaches the upper threshold VREFH, the output of the comparator U1 transitions from a logic high state to a logic low state. In response to this logic state change, the bias switch S.sub.VDDP is turned off at time t4 as indicated by the gate drive signal G.sub.VDDP. During the time interval from t3 to t4, the magnetizing current is partially reset by the bias voltage VDDP. The magnetizing current is of a slope of −VDDP/L.sub.M, where L.sub.M is the magnetizing inductance of the transformer T1.
[0184] During the time interval from t4 to t5, the magnetizing current is reset by the RCD reset device. The magnetizing current i.sub.LM decreases in a linear manner as shown in
[0185] As described above with respect to
[0186] It should be noted the bias capacitor charge time (from t3 to t4) shown in
[0187]
[0188] At t1, the primary side switch S.sub.M is turned on. As a result of turning on the primary side switch S.sub.M, the magnetizing current ramps up from time t1 to time t2 until the bias switch is turned on. During the time interval from t1 to t2, the magnetizing current is of a slope of VIN/L.sub.M.
[0189] At time t2, after the bias voltage reaches the lower threshold VREFL, the output of the comparator U1 transitions from a logic low state to a logic high state. The PWM signal is applied to both the primary switch S.sub.M and the bias switch S.sub.VDDP. Both the PWM signal and the output of the comparator U1 have a logic high state. As a result, the first logic gate U2 generates a logic high signal, which is used to turn on the bias switch S.sub.VDDP through the level shifter U3. Also at time t2, the logic high state from the comparator U1, after passing an inverter, turns off the main switch SM. As shown in
[0190] In response to the turned-on bias switch S.sub.VDDP, the magnetizing current of the transformer T1 charges the bias capacitor C.sub.VDDP in a linear manner from t2 to t3. During the time interval from t2 to t3, the magnetizing current is of a slope of (VIN−VDDP)/L.sub.M, where L.sub.M is the magnetizing inductance of the transformer T1. During the time interval from t2 to t3, the primary switch S.sub.M is off as shown in
[0191] At time t3, after the bias voltage VDDP reaches VREFH, the output of the comparator U1 transitions from a logic high state to a logic low state. In response to this logic state change, the bias switch S.sub.VDDP is turned off and the primary side switch S.sub.M is turned on. As a result of turning on the primary side switch S.sub.M, the magnetizing current ramps up from time t3 to time t4 until the primary side switch S.sub.M is turned off. During the time interval from t3 to t4, the magnetizing current is of a slope of VIN/L.sub.M.
[0192] It should be noted the bias capacitor charge time (from t2 to t3) shown in
[0193] Although embodiments of the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims.
[0194] Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.