QUANTUM CASCADE LASER WITH CURRENT BLOCKING LAYERS

Abstract

Semiconductor Quantum Cascade Lasers (QCLs), in particular mid-IR lasers emitting at wavelengths of about 3-50 μm, are often designed as deep etched buried heterostructure QCLs. The buried heterostructure configuration is favored since the high thermal conductivity of the burying layers, usually of InP, and the low losses guarantee devices high power and high performance. However, if such QCLs are designed for and operated at short wavelengths, a severe disadvantage shows up: the high electric field necessary for such operation drives the operating current partly inside the insulating burying layer. This reduces the current injected into the active region and produces thermal losses, thus degrading performance of the QCL. The invention solves this problem by providing, within the burying layers, effectively designed current blocking or quantum barriers of, e.g. AIAs, InAIAs, InGaAs, InGaAsP, or InGaSb, sandwiched between the usual InP or other burying layers, intrinsic or Fe-doped. These quantum barriers reduce the described negative effect greatly and controllably, resulting in a QCL operating effectively also at short wavelengths and/or in high electric fields.

Claims

1. A semiconductor quantum cascade laser, emitting especially at wavelengths in the mid-IR range, with a substrate, an active region, a cladding, at least two electrodes providing for current injection into said active region, and a buried heterostructure waveguide, wherein said heterostructure waveguide including a stack of a plurality of barrier layers of a first III-V semiconductor compound and staggered alternatingly with a plurality of burying layers of at least one second III-V semiconductor compound.

2. The quantum cascade laser according to claim 1, wherein at least one of the barrier layers consists of a compound of one of the group of AlAs, InAlAs, InGaAs, InGaAsP, or InGaSb.

3. The quantum cascade laser according to claim 1, wherein at least one of the burying layers comprises a first III-V semiconductor compound and at least another one of the burying layers comprises a second, different III-V semiconductor compound.

4. The quantum cascade laser according to claim 3, wherein the first semiconductor compound of the burying layers is an intrinsic compound, in particular i:InP, whereas the second compound is a doped compound, in particular an Fe-doped compound, especially Fe-doped InP.

5. The quantum cascade laser according to claim 3, wherein at least one of the burying layers comprises both an intrinsic compound, in particular i:InP, and a second, doped compound, in particular an Fe-doped compound, especially Fe-doped InP.

6. The quantum cascade laser according to claim 3, wherein both the first semiconductor compound of said burying layers and the second compound are doped compounds, in particular an Fe-doped compound, especially Fe-doped InP.

7. The quantum cascade laser according to claim 1, comprising a buried heterostructure waveguide of a first number of barrier layers and a second number of burying layers, said barrier layers being alternately stacked with said burying layers.

8. The quantum cascade laser according to claim 7, wherein each barrier layer is between 5 and 200 nm thick, whereas the burying layers are between about 50 nm and about 3μiη thick.

9. The quantum cascade laser according to claim 1, comprising a buried heterostructure waveguide of the following structure: TABLE-US-00004 Top Electrode (13) i:Inp (14a) 100 nm InAlAs (14c)  50 nm i:InP or InGaAS (14b) 100 nm InAlAs (14c)  50 nm i:InP (14a) 600 nm InAlAs (14c)  50 nm i:InP or InGaAS (14b) 100 nm InAlAs (14c)  50 nm i:InP (14a) 600 nm InAlAs (14c)  50 nm i:InP or InGaAS (14b) 100 nm InAlAs (14c)  50 nm

10. The quantum cascade laser according claim 1, comprising a buried heterostructure waveguide of the following structure: TABLE-US-00005 Top Elektrode (23) InP:Fe (24a) 100 nm InAlAs (24c)  50 nm InP:Fe (24b) 100 nm InAlAs (24c)  50 nm InP:Fe (24a) 300 nm i:InP (24a) 300 nm InAlAs (24c)  50 nm InP:Fe (24b) 100 nm InAlAs (24c)  50 nm i:InP (24a) 600 nm InAlAs (24c)  50 nm i:InP (24b) 100 nm InAlAs (24c)  50 nm

11. The quantum cascade laser according to claim 1, comprising a buried heterostructure waveguide of the following structure: TABLE-US-00006 Top InP:Fe 100 nm InAlAs  50 nm InP:Fe 100 nm InAlAs  50 nm InP:Fe 300 nm InAlAs  50 nm InP:Fe 100 nm InAlAs  50 nm InP:Fe 600 nm InAlAs  50 nm InP:Fe 100 nm InAlAs  50 nm

12. (canceled)

13. The quantum cascade laser according to claim 7, wherein the first number and second number are both equal to six.

14. The quantum cascade laser according to claim 8, wherein the first each barrier layer is about 50 nm thick and the burying layers are about 600 nm thick.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The appended drawings show in:

[0013] FIG. 1a a prior art buried heterostructure design,

[0014] FIG. 1b the schematic band structure for the prior art design of FIG. 1a

[0015] FIG. 2a a first embodiment according to the invention,

[0016] FIG. 2b the schematic band structure for the embodiment of FIG. 2a,

[0017] FIG. 3a a second embodiment according to the invention,

[0018] FIG. 3b the schematic band structure for the embodiment of FIG. 3a,

[0019] FIG. 4 the schematic band structure of a third embodiment.

DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS

[0020] The following description refers to the appended figures showing the prior art and some embodiments of the present invention.

[0021] FIGS. 1a and 1b, show schematically a prior art buried heterostructure quantum cascade laser, BH QCL, and the schematic band structure of an n:InP-InP:Fe-AR junction used in this prior art structure. AR stands for active region as usual.

[0022] In typical, prior art structures, a substrate 5, usually InP, with a rear or back electrode 6, usually of Au, carries on its top an active region (AR) 2, usually InGaAs/AlInAs, laterally confined by blocking or burying layers 4, i.e. Fe-doped InP or of Fe-doped InGaAs. A top electrode 3, usually also of Au, and an n-doped cladding 1, usually composed of InP and/or a ternary such as InAlAs or InGaAs, complete the structure.

[0023] Since the n-doped cladding 1 is a conductor, it has a leakage current into the lateral confining/blocking layers 4. This major problem with buried heterostructure devices is usually solved by using Fe impurities in the InP blocking layers as mentioned above.

[0024] The schematic band structure of the n:InP-InP:Fe-AR junction in this a prior-art design is shown in FIG. 1b. As mentioned, the number of charge carriers moving from the n-doped InP cladding 1 into the InP blocking layer 4 is reduced by introducing Fe doping in the latter. The thus formed n:InP-InP:Fe junction blocks the carrier leakage from the n:doped InP cladding 1 to the InP:Fe blocking layer(s) 4. Thus the current is confined and the plurality of carriers are injected into the active region (AR) 2.

[0025] In fact, the Fe creates deep donor states in InP, pinning the Fermi level in the middle of the semiconductor forbidden gap. The built-in potential at the interface between the n-doped cladding and the Fe-doped blocking layer(s) acts as a barrier to block the electrons. Unfortunately this built-in potential depends on the maximum Fe-doping that can be incorporated in the InP and thus cannot be increased arbitrarily. The maximum Fe that can be incorporated by epitaxial growth is strongly influenced by the growth temperature. Increasing the growth temperature results in higher Fe-doping levels due to the improved cracking of the Fe precursor molecules.

[0026] Unfortunately the growth of QCLs can be performed at temperatures sensibly lower than the ones necessary to obtain high Fe dopings. Thus, especially for highly strained structures, the temperature for growing the burying layers cannot be increased arbitrarily without degrading the quality of the active layers. Therefore the Fe doping is generally limited to values between 2 and 8×10e16 cm.sup.−3, resulting in a blocking field between 50 and 100 kV/cm. This suffices to block electrons in QCLs emitting in the longer wavelength regions of the mid-IR range with operating fields generally smaller than 100 kV/cm. However this is insufficient for short wavelength QCLs, in particular for lasers emitting in the 3-5 μm range, where the operating field can exceed 100 kV/cm, resulting in a leakage current flowing through the burying layers.

[0027] Further, the growth of Fe-doped layers is strongly influenced by the so-called “background doping” of the machine used for the growth. This background doping is the number of carriers unintentionally added during the growth. InP e.g. is known to have the tendency to be slightly n-doped if grown “undoped”. The amount of background doping depends on the equipment wherein the growth is performed, i.e. the growth chamber conditions. Additional precautions have to be taken to prevent any leakage path being introduced at the beginning of the epitaxial regrowth. This is e.g. described by O. Ostinelli et al. in “Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors”, published in the Journal of Applied Physics, vol. 108, no. 11, p. 114502, 2010.

[0028] To circumvent the problems mentioned above, the present invention introduces additional quantum barriers, constituted by AlInAs/AlAs, InGaAs, InGaAsP, or InGaSb, for example, that improve the blocking of electrons. These barriers block the carrier transport independently from their doping and therefore can be introduced without increasing the optical losses.

[0029] By modifying number and thickness of such quantum barriers, the conductivity inside the burying layer can be adjusted and/or reduced which makes such a QCL suitable for applied high electric fields.

[0030] A significant advantage is that the growth of such quantum barriers is completely independent of the doping and thus far less sensible to the growth conditions. As mentioned above, Fe-doping inside the burying layers is well known for introducing losses in the 3-5 μm spectral region due to the presence of the absorption lines of the levels Fe3+ and Fe2+. This prevents the fabrication of high performance lasers in an interesting spectroscopic window, i.e. for wavelengths that are of interest for many medical and sensing applications due to the presence of fundamental resonances of C—H, O—H and N—H bonds.

[0031] With the present invention, a novel technique to block the electrons in the burying layers is created. In particular, the number of “blocking” quantum barriers can be adjusted according to the operating field of the laser and independent of any Fe-doping.

[0032] Furthermore, the use of quantum barriers according to the invention is fully compatible with the use of Fe-doping to further reduce the conductance in the regions where this will not introduce additional optical losses in the laser.

[0033] To summarize, the present invention introduces a novel method for producing buried heterostructure quantum cascade lasers, which method is not limited by growth conditions, especially growth temperature, and which method can generate optical waveguides with low losses in the desired mid-IR spectral range.

[0034] The following description of several embodiments names certain materials, e.g. InP, both intrinsic (i:InP) and doped, especially Fe-doped (InP:Fe), and InAlAs, to be used when executing this invention. It should be clear that other materials as InGaAs, AIAs, InAs, InGaAsP, InAlGaAs and the like can replace those mentioned without departing from spirit and gist of this invention.

[0035] Three embodiments of the present invention are described in the following.

Embodiment A

[0036] This embodiment is a buried-heterostructure QCL emitting at 3.3 μm.

[0037] FIG. 2a shows this QCL with a layered arrangement, consisting of a couple of barriers confining the buried heterostructure. The structure consists of six quantum barriers of InAlAs embedded in layers of intrinsically undoped InP. This heterostructure provides the low loss waveguide and electron blocking sequence according to the invention. Its details are described in the following.

[0038] A substrate 15, here InP, with a rear or back electrode 16, usually of Au, carries on its top an active region 12 of InGaAs/InAlAs, laterally confined by a heterostructure 14a/14b/14c. This heterostructure comprises three groups of different layers. Each layer 14a consist of intrinsic or undoped i:InP and each layer 14b consist of a semiconductor, here i:InP or InGaAs. The third group are the barrier layers 14c of AlInAs; they are shown in FIG. 2a as thin layers in solid black.

[0039] Also shown in FIG. 2a are a top electrode 13, usually of Au, and an n-doped cladding 11 of InP and a ternary such as InAlAs or InGaAs. The sloped ends 18 of the barriers 14a-c are due to the epitaxial regrowth process taking place around the etched regions. They depend on the growth direction which is typically perpendicular to the etched surface.

[0040] Here are some approximate dimensions of the structure shown in FIG. 2a. The active region AR 12 is about 3 μm thick and 3-20 μm wide. The barrier heterostructure is about 6 μm thick, as is the active region AR 12 plus the cladding 11, which usually is a few μm, here 3 μm, thick.

[0041] The heterostructure of barrier layers is described in detail further down. The substrate 25 has a thickness of about 0.1-0.5 mm. The whole structure shown in FIG. 2a is about 2 mm long and 0.5 mm wide. Please note that these are just approximate dimensions; they vary depending on the preferred wavelength and/or the intended use of the device. Also, FIG. 2a, as all figures, are not to scale.

[0042] FIG. 2b displays a schematic band structure of the quantum barrier sequence of the QCL shown in FIG. 2a. Please note that “i:InP” or “i-InP” stands for intrinsic InP, i.e. undoped InP. The barrier layers 14c function as quantum barriers 17, whose positions can change as well as the number—six such barriers 14c are shown in FIG. 2a—reduce the electron transport without increasing the optical losses. It is important to understand that in embodiment A, by using the shown barriers, carrier leakage can be prevented even without using the InP:Fe.

[0043] The table below discloses the physical structure including the thicknesses of the quantum barriers 14a-c. By introducing these quantum barriers, the electrical conductivity of the heterostructure 14a/14b/14c is reduced without increasing the optical losses, as mentioned above.

[0044] The difference between the prior art burying or blocking layers as shown in FIG. 1a and the blocking layers according to the invention as depicted in FIG. 2a is obvious: whereas the prior art blocking layers consist throughout of Fe-doped InP, i.e. InP:Fe, the novel blocking layers according to the invention include a plurality of different layers including intrinsic/undoped InP.

[0045] The following table shows the dimensions of the confining layered heterostructure depicted in FIG. 2a with the quantum barriers 14a-c according to this embodiment A. Looking at the table below and at FIG. 2a, please note that “Start” defines the bottom of the heterostructure because this is where the regrowth is started. This means that the sequence shown in the table is reversed in the stack shown in FIG. 2a. Further, layers 14b may consist of intrinsic InP, i.e. i:InP as shown in the table, or InAlAs, as explained above. Thus, layers 14a and 14b may consist of different materials. Finally, as mentioned above, FIG. 2a is not true to scale, i.e. the sample dimensions and relations given in the table are not reflected in the figure. Please note that the barrier layers are shown in bold letters.

TABLE-US-00001 Embodiment A Top i:InP-14a 100 nm InAlAs-14c  50 nm i:InP or 100 nm InGaAS-14b InAlAs-14c  50 nm i:InP-14a 600 nm InAlAs-14c  50 nm i:InP or 100 nm InGaAs-14b InAlAs-14c  50 nm i:InP-14a 600 nm InAlAs-14c  50 nm i:InP or 100 nm InGaAs-14b InAlAs-14c  50 nm

Embodiment B

[0046] Embodiment B is another buried-heterostructure QCL emitting at 3.3 μm. Its overall dimensions are similar to the dimensions of Embodiment A.

[0047] However, to furthermore decrease the electrical conductivity for a given number of quantum barriers, Fe doping of the InP regions is partially reintroduced, but only far from the active region. In this case, Fe doping is only present close to the junction with the n-doped contact where the electrons are injected and not near the active region AR where the optical mode is relevant.

[0048] FIG. 3a shows this second embodiment according to the invention. The structure includes a substrate 25, here InP, with a rear or back electrode 26, usually of Au, a top electrode 23, usually also of Au, and a n-doped cladding 21, composed of InP and/or a ternary such as InAlAs or InGaAs on top of its active region 22 of InGaAs/InAlAs.

[0049] As in Embodiment A, the active region 22 is laterally confined on both sides by a barrier heterostructure with three groups of layers 24a/24b/24c of which the six layers 24c serve as blocking layers, consisting of InAlAs. As in Embodiment A, six quantum barriers 24c of InAlAs are used for electron blocking; further, the sloped ends 28 of the layers 24c are due to the epitaxial regrowth process taking place around the etched regions.

[0050] This Embodiment B differs from Embodiment A in that the five InP layers 24a and 24b closest to the electric contact 23 are doped with Fe, InP:Fe. Another difference to Embodiment A is a two-component burying layer 24a consisting of a deposit of Fe-doped InP, InP:Fe, and a deposit of intrinsic InP, i:InP, each of 300 nm thickness in the example shown.

[0051] Alternatively, all layers 24a and 24b in Embodiment B may be Fe-doped, i.e. consist of InP:Fe, whereby the Fe-doping level is reduced in the proximity of the active region 22.

[0052] Layers 24b may also consist of InGaAs instead of InP as in Embodiment A, FIG. 2a. Such InGaAs layers would be Fe-doped as explained above in connection with the respective InP layers. As mentioned, quantum barriers 24c confining or separating the burying layers 24a and 24b, consist of undoped InAlAs, again as in Embodiment A. So the difference to Embodiment A lies in the described Fe-doping of the layers 24a and b and the provision of at least one two-component burying layer 24a as mentioned above.

[0053] FIG. 3b displays a schematic band structure of the quantum barrier sequence of the QCL shown in FIG. 3a. In this case both the quantum barriers 24c and the Fe-doped layers 24a and 24b serve to block the carriers. The table below shows sample dimensions of a structure according to FIG. 3a:

TABLE-US-00002 Embodiment B Top InP:Fe-24a 100 nm InAlAs-24c  50 nm InP:Fe-24b 100 nm InAlAs-24c  50 nm InP:Fe-24a 300 nm i:InP-24a 300 nm InAlAs-24c  50 nm InP:Fe-24b 100 nm InAlAs-24c  50 nm i:InP-24a 600 nm InAlAs-24c  50 nm i:InP-24b 100 nm InAlAs-24c  50 nm

Embodiment C

[0054] This embodiment is a third buried-heterostructure QCL, a structure emitting at a wavelength of 4.3 μm with a high operating field to reduce electron leakage.

[0055] The basic structure of this embodiment is identical to the structure of Embodiment A, i.e. the confining layered barrier heterostructure comprises three groups of layers, a barrier group consisting of InAlAs, a second group of InP and a third group of either InP or InGaAs layers. The difference to the two aforementioned embodiments is that all InP or InGaAs layers are Fe-doped. Thus both the quantum barriers and the Fe doping serve to block the carriers which can be important and crucial for QCLs operating in a high electric field.

[0056] The following table shows structure and dimensions of this third embodiment:

TABLE-US-00003 Embodiment C Top InP:Fe 100 nm InAlAs  50 nm InP:Fe 100 nm InAlAs  50 nm InP:Fe 600 nm InAlAs  50 nm InP:Fe 100 nm InAlAs  50 nm InP:Fe 600 nm InAlAs  50 nm InP:Fe 100 nm InAlAs  50 nm

[0057] FIG. 4 shows the schematic band structure of this third QCL embodiment according to the invention. Alternatively to the structure according to the table above, eight quantum barriers may be used for electron blocking in this case.

[0058] The above detailed description of the function and of various embodiments of the present invention permit a person skilled in the art to devise further implementations without departing from spirit and scope of the present invention.