THERMOELECTRIC MATERIAL, AND PREPARATION METHOD THEREFOR AND APPLICATION THEREOF

Abstract

The present application discloses a thermoelectric material, which contains CsAg.sub.5Te.sub.3 crystal material. At 700K, the thermoelectric material has an optimum dimensionless figure-of-merit Z1 as high as 1.6 and a high stability, and the thermoelectric material can be recycled. The present application also discloses a method for preparing the CsAg.sub.5Te.sub.3 crystal material. The CsAg.sub.5Te.sub.3 crystal material is one-step synthesized by a high-temperature solid-state method, using a raw material containing Cs, Ag and Te, so that the high-purity product is obtained while the synthesis time is greatly shortened.

Claims

1. A thermoelectric material, which contains a CsAg.sub.5Te.sub.3 crystal material.

2. A method for preparing CsAg.sub.5Te.sub.3 crystal material, wherein CsAg.sub.5Te.sub.3 crystal material is obtained by placing a raw material containing cesium element, silver element and tellurium element under a vacuum condition and using high temperature solid phase method.

3. A method for preparing CsAg.sub.5Te.sub.3 crystal material according to claim 2, wherein the mole ratio of cesium element, silver element and tellurium element in the raw material is
Cs:Ag:Te=1:4.9˜5.1:2.9˜3.1.

4. A method for preparing CsAg.sub.5Te.sub.3 crystal material according to claim 2, wherein the mole ratio of cesium element, silver element and tellurium element in the raw material is
Cs:Ag:Te=1:5:3.

5. A method for preparing CsAg.sub.5Te.sub.3 crystal material according to claim 2, wherein in the raw material, the silver element is from silver elementary substance; and the cesium element is from cesium elementary substance; and the tellurium element is from tellurium elementary substance.

6. A method for preparing CsAg.sub.5Te.sub.3 crystal material according to claim 5, wherein in the raw material, silver elementary substance is located between cesium elementary substance and tellurium elementary substance.

7. A method for preparing CsAg.sub.5Te.sub.3 crystal material according to claim 2, wherein the condition of high temperature solid phase method is that the raw material is kept in a temperature range from 750° C. to 950° C. for no more than 48 hours.

8. A method for preparing a densified bulk thermoelectric material, wherein the densified bulk thermoelectric material is obtained by hot-pressing sintering of the CsAg.sub.5Te.sub.3 crystal material obtained using the method according to claim 2; which is that the CsAg.sub.5Te.sub.3 crystal material is kept in a temperature range from 400° C. to 500° C. and in a pressure range from 60 MPa to 110 MPa for not less than 30 min to the obtain densified bulk thermoelectric material.

9. A thermoelectric material, which contains the CsAg.sub.5Te.sub.3 crystal material prepared by any method according to claim 2 and/or the densified bulk thermoelectric material prepared by any method.

10. A thermoelectric converter, which contains the CsAg.sub.5Te.sub.3 crystal material prepared by any method according to 7 claim 2 and/or the densified bulk thermoelectric material prepared by any method.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] FIG. 1 is XRD powder diffraction spectrum of Sample 1 powder: (a) is the theoretical powder X-ray diffraction spectrum of CsAg.sub.5Te.sub.3; (b) is the powder X-ray diffraction spectrum of the Sample 1 powder obtained by experimental measure.

[0030] FIG. 2 is a graph showing the relationship of electrothermal transport properties to temperature of Samples 1 to 4: (a) shows the relationship of electric conductivity to temperature; (b) shows the relationship of Seebeck coefficient to temperature; (c) shows the relationship of power factor to temperature; (d) shows relationship of thermal conductivity to temperature.

[0031] FIG. 3 is a graph showing the relationship of Dimensionless figure-of-merit to temperature of Samples 1 to 4.

[0032] FIG. 4 is a graph showing the relationship of the electrical transport property to temperature of Sample 1 recycled for once, twice and three times: (a) shows the relationship of electric conductivity to temperature; (b) shows the relationship of Seebeck coefficient to temperature.

DETAILED DESCRIPTION OF THE EMBODIMENT

[0033] The present application will be further described by combining with Examples. It should be understand that these Examples are only used to illustrate the present application and not to limit the scope of the present application.

[0034] In the Examples, the X ray powder diffraction analysis of the samples were determined using a D/MAX2500 X-ray Diffractometer of Rigaku Corporation, with Cu target, Kα radiation source (λ=0.154184 nm).

[0035] The thermal conductivities were measured on a LFA427 thermal conductivity meter of German Netzsch.

[0036] The electric conductivities and Sebecke coefficients were measured using a ZEM-3 thermoelectric evaluation system of the Japanese ULAC-RIKO, Inc.

[0037] The hot pressing sintering was carried out in ZTY-15-20 hot pressing sintering furnace of Shanghai Chenxin Electric Furnace Co., LTD.

[0038] In the Examples, cesium elementary substance was a liquid cesium with purity of 99.98% purchased from Alfa Aesar (China) Chemical Co. LTD.; and silver elementary substance was a silver powder with purity of 99.999% purchased from Sinopharm Chemical Reagent Co., LTD.; and tellurium elementary substance was a tellurium block with purity of 99.999% purchased from Sinopharm Chemical Reagent Co., LTD.

EXAMPLE 1

Preparation of Samples 1 Powder to 4 Powder

[0039] The liquid cesium, silver powder and tellurium block were placed in a quartz reaction tube in sequence. After being vacuumized to 10.sup.−2 Pa, the quartz reaction tube was sealed with oxyhydrogen flame and then placed in a high temperature furnace. And then it spent 10 hours for increasing the temperature of the high temperature furnace from room temperature to the solid melting temperature. After keeping the temperature at the solid melting temperature for a solid melting time, the temperature was naturally cooled to room temperature, grinding to obtain the CsAg.sub.5Te.sub.3 crystal material powder samples.

[0040] The relationship of number of Samples with molar ratios in the raw material, solid melting temperatures and solid melting times were shown in Table 1.

TABLE-US-00001 TABLE 1 Molar Ratio in the Solid Melting solid melting time Samples raw material Temperature (° C.) (h) 1 Powder Cs:Ag:Te = 850 20 1:5:3 2 Powder Cs:Ag:Te = 950 12 1:4.9:2.9 3 Powder Cs:Ag:Te = 900 24 1:5.05:3.05 4 Powder Cs:Ag:Te = 750 48 1:5.1:3.1

EXAMPLE 2

Structural Characterization of the Samples 1 Powder to 4 Powder

[0041] The X-ray powder diffraction analysis (XRD) of Samples 1 Powder to 4 Powder were determined. The results indicated that Samples 1 Powder to 4 Powder prepared in Example 1 all were CsAg.sub.5Te.sub.3 crystal samples with high purity. The typical XRD spectrum was the XRD spectrum of Sample 1 Powder, which was shown in FIG. 1. In FIG. 1, (a) is the theoretical powder X-ray diffraction spectrum of CsAg.sub.5Te.sub.3 and (b) is the powder X-ray diffraction spectrum of the Sample 1 powder obtained by experimental measure. It showed that the experimental spectrum was high consistent with the theoretical spectrum simulated from single crystal data, indicating that the sample prepared was with a very high purity. XRD spectra of Sample 2 Powder, Sample 3 Powder and Sample 4 Powder were similar to FIG. 1, which showed that each corresponding peak had the same peak position and the ±5% difference of peak intensity.

Example 3

Preparation of Densified Bulk Samples 1 to 4

[0042] The Samples 1 Powder to 4 Powder were put into a hot pressing sintering furnace respectively, to obtain the densified bulk samples, and the densified bulk samples were respectively recorded as Sample 1 to Sample 4. The relationship of number of Samples with the conditions of hot pressing sintering were shown in Table 2

TABLE-US-00002 TABLE 2 Pressure Temperature Samples (MPa) (° C.) Time (min) 1 110 400 30 2 100 430 40 3 80 460 60 4 60 500 90

EXAMPLE 4

Measurement of Thermoelectric Properties of Samples 1 to 4

[0043] The thermoelectric properties of Samples 1 to 4 obtained in Example 3 were measured us a thermoelectric evaluation system. The detailed process was as follows: cutting the densified bulk Samples 1 to 4 by hot pressing sintering into a disk with 10 mm diameter and 2 mm thickness, respectively, to be used in the measurement of thermal conductivity; and cutting the densified bulk Samples 1 to 4 into a cuboid of 2 mm×3 mm×10 mm, respectively, to be used in the measurement of Seebeck coefficient.

[0044] The relationship of electrothermal transport properties to temperature of Samples 1 to 4 was shown in FIG. 2. And FIG. 2(a) had shown the relationship of electric conductivity to temperature; and FIG. 2(b) had shown the relationship of Seebeck coefficient to temperature; and FIG. 2(c) had shown the relationship of power factor to temperature; and FIG. 2(d) had shown relationship of thermal conductivity to temperature. It indicated that Samples 1 to 4 all have moderate electric conductivity and high Seebeck coefficient and the lowest thermal conductivity comparing with the similar thermoelectric materials which currently exist.

[0045] The graph showing the relationship of Dimensionless figure-of-merit to temperature of Samples from 1 to 4 had been shown in FIG. 3. It indicated that at 700K, the optimum dimensionless figure-of-merit ZT could reach 1.6, which is the highest vale among polycrystal thermoelectric materials without doping modification which currently exist. The ZT of the thermoelectric material provided in the present application is expected to be improved through further optimization.

EXAMPLE 5

Measurement Thermoelectric Properties of the Recycled Sample 1

[0046] The thermoelectric properties of the recycled Sample 1 were measured. The detailed process was as follows: cutting the densified bulk Sample 1 into a cuboid of 2 mm×3 mm×10 mm; and then placing the cuboid in the ZEM-3 thermoelectric evaluation system to in-situ measure for 3 times.

[0047] The relationship of the electrical transport property to temperature of Sample 1 had been shown in FIG. 4. And (a) had shown the relationship of electric conductivity to temperature; and (b) had shown the relationship of Seebeck coefficient to temperature. It indicated that the sample has high stability and recyclability.

[0048] It will be understood that the foregoing Examples are only some examples of the present application, rather than limit the present application in any form. Although the optimized examples of the present application are illustrated as above, they are not intended to limit the present application. In view of the instant disclosure, modifications or changes may be made by those skilled in the art without departing from the spirit and purview of the present application, and those modifications or changes are equivalent embodiments of the present application, falling into the scope of the appended claims.