ALUMINA-BASED HETEROJUNCTION MATERIAL WITH ABUNDANT OXYGEN VACANCIES AND PREPARATION METHOD THEREOF
20230202857 · 2023-06-29
Inventors
- Fa-tang Li (Shijiazhuang City, CN)
- Qi Li (Shijiazhuang City, CN)
- Shao-qiang Li (Shijiazhuang City, CN)
- Ying Liu (Shijiazhuang City, CN)
- Rui-hong Liu (Shijiazhuang City, CN)
Cpc classification
H01L29/24
ELECTRICITY
International classification
Abstract
Disclosed are an alumina-based heterojunction material with abundant oxygen vacancies and a preparation method thereof. The heterojunction material is composed of alumina with abundant oxygen vacancies and bismuth-rich bismuth oxychloride. The method includes mixing aluminum nitrate nonahydrate, bismuth nitrate pentahydrate, an ammonium salt and urea, each in certain amount, under stirring to obtain a mixture B, placing the mixture B in a muffle furnace, heating the mixture B and continuing the stirring to gradually melt the mixture B to form an ionic liquid B; and subjecting the ionic liquid B to a spontaneous combustion reaction in the muffle furnace to obtain a product B, and cooling the product B to room temperature to obtain the alumina-based heterojunction material with abundant oxygen vacancies.
Claims
1. An alumina-based heterojunction material with abundant oxygen vacancies, which is composed of Al.sub.2O.sub.3 with abundant oxygen vacancies and bismuth-rich bismuth oxychloride Bi.sub.12O.sub.17Cl.sub.2.
2. A method for preparing the Al.sub.2O.sub.3 with abundant oxygen vacancies as defined in claim 1, comprising mixing aluminum nitrate nonahydrate, an ammonium salt, and urea in a molar ratio of 1:(0.5-3.0):(0.5-2.0) under stirring to obtain a mixture A, placing the mixture A in a muffle furnace, and heating the mixture A at a temperature of 200-600° C. to gradually melt the mixture A to form an ionic liquid A; and maintaining the temperature, subjecting the ionic liquid A to a spontaneous combustion reaction in the muffle furnace to obtain a product A, and cooling the product A to room temperature to obtain the Al.sub.2O.sub.3 with abundant oxygen vacancies.
3. The method of claim 2, wherein the mixture A is heated at a temperature of 500° C.
4. The method of claim 2, wherein the ammonium salt comprises at least one ammonium halide selected from the group consisting of dimethylammonium chloride, trimethylammonium chloride, tetramethylammonium chloride, diethylammonium chloride, 2-bromoethylamine hydrobromate, tetrabutyl ammonium bromide, and tetraethylammonium iodide.
5. The method of claim 2, wherein the molar ratio of aluminum nitrate nonahydrate, the ammonium salt, and urea is in a range of 1:(0.5-1.5):(0.5-1.0).
6. The method of claim 2, wherein the molar ratio of aluminum nitrate nonahydrate, the ammonium salt, and urea is 1:1.5:0.5.
7. A method for preparing an alumina-based heterojunction material with abundant oxygen vacancies, comprising steps of a) mixing bismuth nitrate pentahydrate, aluminum nitrate nonahydrate, an ammonium salt, and urea under stirring in a molar ratio of 12:(1-4):2:(2-12) to obtain a mixture B, placing the mixture B in a muffle furnace, heating the mixture B at a temperature of 200-500° C. to gradually melt the mixture B to form an ionic liquid B, and continuing the stirring to be uniform; and b) maintaining the temperature, subjecting the ionic liquid B to a spontaneous combustion reaction in the muffle furnace to obtain a product B, and cooling the product B to room temperature to obtain the alumina-based heterojunction material with abundant oxygen vacancies.
8. The method of claim 7, wherein the molar ratio of bismuth nitrate pentahydrate, aluminum nitrate nonahydrate, the ammonium salt, and urea is in a range of 12:(1.5-3):2:(4-8).
9. The method of claim 7, wherein the mixture B is heated at a temperature of 300-450° C.
10. The method of claim 7, wherein the mixture B is heated at a temperature of 350-400° C.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0029]
[0030]
[0031]
[0032]
[0033]
[0034]
[0035]
[0036]
[0037]
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0038] The present disclosure is further described in detail below with reference to the drawings and specific examples. As used herein, the phrase “muffle furnace” means a furnace where materials are heated to produce changes in physiological properties.
Example 1
[0039] Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies was prepared as follows:
[0040] (1) Aluminum nitrate nonahydrate, diethylammonium chloride, and urea were mixed under stirring in a molar ratio of 1:0.5:2, obtaining a mixture A. The mixture A was then placed in a muffle furnace and heated to 200° C. In the muffle furnace, the mixture A was gradually melted to form an ionic liquid A.
[0041] (2) The above temperature was maintained in the muffle furnace, and the ionic liquid A was subjected to a spontaneous combustion reaction, obtaining a product A. The product A was cooled to room temperature, obtaining a pure Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies.
[0042] The obtained product was characterized by XRD, UV-Vis DRS, EPR, .sup.27Al NMR and N.sub.2 adsorption and desorption tests. The results are shown in
[0043] The XRD patterns are shown in
[0044] The UV-Vis DRS spectra are shown in
[0045] The EPR spectrum is shown in
[0046] The .sup.27Al NMR spectrum is shown in
[0047] The curve of N.sub.2 absorption and desorption is shown in
Example 2
[0048] Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies was prepared as follows:
[0049] (1) Aluminum nitrate nonahydrate, diethylammonium chloride, trimethylammonium chloride, and urea were mixed under stirring in a molar ratio of 1:0.5:2.5:0.5, obtaining a mixture A. The mixture A was then placed in a muffle furnace and heated to 400° C. In the muffle furnace, the mixture A was gradually melted to form an ionic liquid A.
[0050] (2) The above temperature was maintained in the muffle furnace, and the ionic liquid A was subjected to a spontaneous combustion reaction, obtaining a product A., The product A was cooled to room temperature, obtaining the final product.
[0051] The obtained final product was characterized by XRD, and UV-Vis DRS. The results are shown in
Example 3
[0052] Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies was prepared as follows:
[0053] (1) Aluminum nitrate nonahydrate, tetrabutylammonium bromide, and urea were mixed under stirring in a molar ratio of 1:1:0.5, obtaining a mixture A. The mixture A was then placed in a muffle furnace and heated to 600° C. In the muffle furnace, the mixture A was gradually melted to form an ionic liquid A.
[0054] (2) The above temperature was maintained in the muffle furnace, and the ionic liquid A was subjected to a spontaneous combustion reaction, obtaining a product A. The product A was cooled to room temperature, obtaining a pure Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies.
[0055] The obtained product was characterized by XRD, and UV-Vis DRS. The results are shown in
Example 4
[0056] Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies was prepared as follows:
[0057] (1) Aluminum nitrate nonahydrate, tetrabutylammonium bromide, and urea were mixed under stirring in a molar ratio of 1:1.5:2, obtaining a mixture A. The mixture A was then placed in a muffle furnace and heated to 500° C. In the muffle furnace, the mixture A was gradually melted to form an ionic liquid A.
[0058] (2) The above temperature was maintained in the muffle furnace, and the ionic liquid A was subjected to a spontaneous combustion reaction, obtaining a product A. The product A was cooled to room temperature, obtaining a pure Al.sub.2O.sub.3 material with unsaturated coordination and abundant oxygen vacancies.
[0059] The obtained product was characterized by XRD, and UV-Vis DRS. The results are shown in
Example 5
[0060] A alumina-based heterojunction material with abundant oxygen vacancies was prepared by compounding Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies with Bi.sub.12O.sub.17Cl.sub.2 as follows:
[0061] (1) Bismuth nitrate pentahydrate, aluminum nitrate nonahydrate, diethylammonium chloride, and urea were mixed under stirring in a molar ratio of 12:2:2:6, obtaining a mixture B. The mixture B was then placed in a muffle furnace and heated to 500° C. In the muffle furnace, the mixture B was gradually melted to form an ionic liquid B.
[0062] (2) The above temperature was maintained in the muffle furnace, and the ionic liquid B was subjected to a spontaneous combustion reaction, obtaining a product B. The product B was then cooled to room temperature, obtaining a composite of Al.sub.2O.sub.3 and Bi.sub.12O.sub.17Cl.sub.2.
[0063] The obtained product sample was characterized by high resolution transmission electron microscope (HRTEM), O.sub.2-TPD, EPR- .circle-solid.O.sub.2.sup.− and EPR- .circle-solid.OH. The results are shown in
[0064] In
[0065] The O.sub.2-TPD spectrum is shown in
[0066]
[0067]
Example 6
[0068] An alumina-based heterojunction material with abundant oxygen vacancies was prepared by compounding Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies with Bi.sub.12O.sub.17Cl.sub.2 as follows:
[0069] (1) Bismuth nitrate pentahydrate, aluminum nitrate nonahydrate, diethylammonium chloride, and urea were mixed under stirring in a molar ratio of 12:1:2:3, obtaining a mixture B. The mixture B was then placed in a muffle furnace and heated to 500° C. In the muffle furnace, the mixture B was gradually melted to form an ionic liquid B.
[0070] (2) The above temperature was maintained in the muffle furnace, and the ionic liquid B was subjected to a spontaneous combustion reaction, obtaining a product B. The product B was then cooled to room temperature, obtaining a composite of Al.sub.2O.sub.3 and Bi.sub.12O.sub.17Cl.sub.2.
Example 7
[0071] An alumina-based heterojunction material with abundant oxygen vacancies was prepared by compounding Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies with Bi.sub.12O.sub.17Cl.sub.2 as follows:
[0072] (1) Bismuth nitrate pentahydrate, aluminum nitrate nonahydrate, trimethylammonium chloride, and urea were mixed under stirring in a molar ratio of 12:4:2:12, obtaining a mixture B. The mixture B was then placed in a muffle furnace and heated to 500° C. In the muffle furnace, the mixture B was gradually melted to form an ionic liquid B.
[0073] (2) The above temperature was maintained in the muffle furnace, and the ionic liquid B was subjected to a spontaneous combustion reaction, obtaining a product B. The product B was then cooled to room temperature, obtaining a composite of Al.sub.2O.sub.3 and Bi.sub.12O.sub.17Cl.sub.2.
Example 8
[0074] An alumina-based heterojunction material with abundant oxygen vacancies was prepared by compounding Al.sub.2O.sub.3 with unsaturated coordination and abundant oxygen vacancies with Bi.sub.12O.sub.17Cl.sub.2 as follows:
[0075] (1) Bismuth nitrate pentahydrate, aluminum nitrate nonahydrate, tetramethylammonium chloride, and urea were mixed under stirring in a molar ratio of 12:3:2:9, obtaining a mixture B. The mixture B was then placed in a muffle furnace and heated to 500° C. In the muffle furnace, the mixture B was gradually melted to form an ionic liquid B.
[0076] (2) The above temperature was maintained in the muffle furnace, and the ionic liquid B was subjected to a spontaneous combustion reaction, obtaining a product B. The product B was then cooled to room temperature, obtaining a composite of Al.sub.2O.sub.3 and Bi.sub.12O.sub.17Cl.sub.2, i.e., the alumina-based heterojunction material with abundant oxygen vacancies.