MICRO ELECTRO-MECHANICAL STRAIN DISPLACEMENT SENSOR AND USAGE MONITORING SYSTEM
20170363486 · 2017-12-21
Inventors
Cpc classification
G01M5/0083
PHYSICS
G01L1/005
PHYSICS
International classification
G01L1/04
PHYSICS
Abstract
A low power consumption multi-contact micro electro-mechanical strain/displacement sensor and miniature autonomous self-contained systems for recording of stress and usage history with direct output suitable for fatigue and load spectrum analysis are provided. In aerospace applications the system can assist in prediction of fatigue of a component subject to mechanical stresses as well as in harmonizing maintenance and overhauls intervals. In alternative applications, i.e. civil structures, general machinery, marine and submarine vessels, etc., the system can autonomously record strain history, strain spectrum or maximum values of the strain over a prolonged period of time using an internal power supply or a power supply combined with an energy harvesting device. The sensor is based on MEMS technology and incorporates a micro array of flexible micro or nano-size cantilevers. The system can have extremely low power consumption while maintaining precision and temperature/humidify independence.
Claims
1-51. (canceled)
52. A MEMS sensor having a plurality of deformable members and at least one driving member positioned in spaced relationship related to said deformable members and providing displacement wherein said displacement causes said deformable members to create a sequential contact between them wherein a predetermined spacing between said deformable members defines the MEMS displacement sensor sensitivity to said displacement and the state of the contacts assigned to a specific displacement define the output of said sensor.
53. The MEMS sensor of claim 52 wherein said deformable members are chosen from the range consisting of cantilevers, beams, bridges, membranes, wires and nano-tubes.
54. The MEMS sensor of claim 52 wherein said driver member is hermetically and moveable sealed within said MEMS sensor.
55. The MEMS sensor of claim 52 wherein said driver member is connected to a mechanical displacement amplification means.
56. The MEMS sensor of claim 52 wherein at least one of said deformable members has a provision for mechanical memory of its shape after deformation.
57. The MEMS sensor of claim 52 wherein at least one of said deformable members is electro-conductive.
58. The MEMS sensor of claim 57 wherein said conductive property is achieved through doping of Silicon.
59. The MEMS sensor claim 57 wherein said conductive property is achieved through use of electro-conductive coating or metal film, for instance.
60. The MEMS sensor of claim 52 wherein said plurality of the deformable members is connected to electronic circuitry.
61. The MEMS sensor of claim 60 wherein said circuitry is integral with the substrate.
62. The MEMS sensor of claim 60 wherein said circuitry contains means for detecting change of the state of said deformable members in response to said displacement and generating a signal indicating of said change of the state of contacts.
63. The MEMS sensor of claim 52 wherein said sensor's output is chosen from the range of: resistance, capacitance, voltage or electric charge.
64. A MEMS sensor wherein said sensor has a deformable base with at least two spaced apart points of attachment to a test structure wherein said deformable base is connected to a substrate having at least two deformable members spaced apart with a predetermined gap and to a driver member in spaced relationship to said deformable member wherein the displacement caused by the test structure strain and deformation of said deformable base causes at least one of said deformable members to contact another deformable member thus changing the state of their contact relationship and providing an output related to said displacement.
65. The MEMS sensor of claim 64 wherein said housing or part of it is deformable.
66. A MEMS sensor for measuring mechanical strain in a structure, comprising: a base having a first end, a second end, the first end movable relative to the second end, the first end and the second end fixed to the structure; at least one array, each at least one array having at least one cantilever, each at least one cantilever having a movable, distal end and a fixed, proximal end, the fixed proximal end fixed to one of the first end of the base and the second end of the base, the at least one cantilever in electrical communication with an electrical circuit, and a contact fixed to the other of the first end of the base and the second end of the base, the contact in communication with the electric circuit, wherein when the first end of the base moves relative to the second end of the base the contact engages the distal end of the at least one cantilever thereby completing electrical connection between the engagement member and the at least one cantilever
67. An autonomous predictive system for measuring mechanical strain in a structure, comprising: a MEMS gauge adapted to provide an electronic signal in response to mechanical strain applied to the MEMS gauge; a processing means or a programmable logic device means or a combination thereof in electrical communication with the MEMS gauge, the processing means receiving the electronic signal and generating data output based on the electronic signal received from the MEMS gauge; an electronic database in electronic communication with the processor, the electronic database storing the data output received from the processor; and an electrical power source for providing electrical energy to at least one of: the processor, the MEMS gauge and the electronic database.
68. A method of manufacturing a MEMS displacement gauge or a strain gauge for measuring compressive and tensile strain in a structure, the gauge comprising: a base having a first end, a second end, the first end movable relative to the second end, the first end and the second end fixed to the structure; at least one array, each at least one array having at least one cantilever, each at least one cantilever having a movable, distal end and a fixed, proximal end, the fixed proximal end fixed to one of the first end of the base and the second end of the base, the at least one cantilever in electrical communication with an electrical circuit, and an engagement member fixed to the other of the first end of the base and the second end of the base, the engagement member in communication with the electric circuit, wherein when the first end of the base moves relative to the second end of the base the engagement member engages the distal end of the at least one cantilever thereby completed electrical connection between the engagement member and the at least one cantilever.
69. A method of measuring compressive and tensile strain in a structure with a MEMS gauge, the method comprising: receiving an electrical output from a MEMS gauge; detecting a wake-up signal when state of said MEMS gauge changes; processing the electrical output to result in strain data; storing the strain data in an electronic database.
70. A MEMS sensor for measuring mechanical strain in a structure comprising: a base having a first longitudinally extending side, a second longitudinally extending side, a first end mounted to the support structure and a second end mounted to the support structure, said second end longitudinally translatable relative to said first end; a first inwardly projecting slot located in said first longitudinally extending side, a second inwardly projecting slot located in said second longitudinally extending side, said first inwardly projecting slot located across and adjacent from said second inwardly projecting slot, said first inwardly projecting slot and said second inwardly projecting slot located adjacent to one of said first end and said second end; an internal lateral slot laterally extending across said body from a first position inwardly adjacent said first longitudinally extending side to a second position inwardly adjacent said second longitudinally extending side, said internal lateral slot located adjacent to said other of said first end and said second end; a first internal longitudinally extending slot extending between said first inwardly projecting slot and said internal lateral slot, said first internal longitudinally extending slot oriented parallel to and adjacent from said first longitudinally extending side, said first internal longitudinally extending slot having a first inwardly projecting component and a second inwardly projecting component each communicating with a longitudinally extending component; a second internal longitudinally extending slot extending between said second inwardly projecting slot and said internal lateral slot, said second internal longitudinally extending slot oriented parallel to said first internal longitudinally extending slot and oriented parallel to and adjacent from said second longitudinally extending side, said second internal longitudinally extending slot having a first inwardly projecting component and a second inwardly projecting component each communicating with a longitudinally extending component; an upwardly projecting central pin mounted to an upper surface of said base; a substrate fixed to an upper surface of said base, said substrate having a central hole adapted to loosely receive said upwardly projecting central pin, said substrate comprising: a central flexure component fixed to said substrate, said central flexure component having a central hole aligned with said central hole of said substrate and adapted to snugly receive said upwardly projecting central pin, said central flexure component having a first outer surface adjacent said central hole and a second outer surface adjacent said central hole; an array comprising: a first plurality of deformable electro conductive micro members, each of said first plurality of deformable electro conductive micro members transversely extending and oriented generally perpendicular to a longitudinal axis of said body and arranged in a longitudinally spaced out manner; each of said first plurality of deformable electro conductive micro members having a fixed first end fixed to said substrate and a movable second end, said movable second end translatable in a generally longitudinal direction; a second plurality of deformable electro conductive micro members, each of said second plurality of deformable electro conductive micro members transversely extending and oriented generally perpendicular to a longitudinal axis of said body and arranged in a longitudinally spaced out manner; each of said second plurality of deformable electro conductive micro members having a fixed first end and a movable second end, said movable second end translatable in a generally longitudinal direction; and wherein when said body is placed under tension said pin moves relative to said substrate in a direction away from said internal lateral slot and engages said central flexure component such that a first outer surface of said central flexure component engages said movable second end of an adjacent deformable electro conductive micro plate of one of said first plurality of deformable electro conductive micro members and said second plurality of deformable electro conductive micro members; and wherein when said body is placed under compression said pin moves relative to said substrate in a direction towards said internal lateral slot and engages said central flexure component such that a second outer surface of said central flexure component engages said movable second end of an adjacent deformable electro conductive micro plate of the other of said first plurality of deformable electro conductive micro members and said second plurality of deformable electro conductive micro members.
71. MEMS displacement sensor comprising a plurality of deformable members and at least one drive member providing said displacement to at least one of said deformable members wherein said deformable members are spaced apart in a fashion that said displacement causes a sequential contact between said deformable members and provides an electric output proportional to said displacement.
Description
BRIEF DESCRIPTION OF DRAWINGS
Description of Drawings
[0086] The invention is better described with reference to the drawings in which:
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BEST MODE FOR CARRYING OUT THE INVENTION
Best Mode
[0197] Best mode of the invention is generally illustrated by
MODE FOR THE INVENTION
Mode for Invention
[0198] In at least one embodiment the present invention relates to a system for monitoring and logging displacements related to mechanical stress conditions.
[0199] As will be a readily appreciated by the skilled person, all components discussed herein can be manufactured of any suitable material and by any suitable manufacturing method including those customary to nano and MEMS technological processes as will be readily understood by the skilled person.
[0200] These manufacturing methods and steps include but not limited to wet or dry etching, deep reactive ion etching, micromachining, SCREAM process, photolithography, masking, metal deposition, SI doping, application and removal of sacrificial layers and photo resists, oxidation and chemical processing, wire bonding, chemical vapor deposition, bonding, encapsulation, thermal treatment, polycrystalline silicone layers deposition and removal, chemical and mechanical polishing, application of anti-sticking materials, treatment and techniques, sandwiching of multiple layers and devices, etc..
[0201] In at least one embodiment of the present invention, the present invention can provide portable sensing means and a device for continuous monitoring, logging and processing of stress conditions (via displacement caused by strain) in a physical structure, while achieving low power consumption and adequate memory storage allowing for monitoring over an extended period.
[0202] Another embodiment of the present invention can provide an extremely low power consumption displacement sensor capable of easy implementation into a variety of applications.
[0203] Yet another embodiment of the present invention can provide a processing algorithm allowing for onboard analysis of the data provided by the sensing means in order to reduce the amount of memory needed while providing a complete picture with respect to the history of usage and events necessary for fatigue life prediction and factual load spectrum analysis.
[0204] This latter aspect can permit careful prediction of the remaining life of a particular monitored component and can also provide an estimation of the damage that the component has experienced due to overloading during the use of the sensor. Based on this collected data and the associated knowledge that can be inferred therefrom, it can be possible to determine the appropriateness of the overhaul/reinforcement of a component and therefore justify the necessity to replace a component only if real, observed damage has occurred.
[0205] In this way, the present invention can allow instrumenting an aircraft or other structure without interference into existing data recording instrumentation due to the autonomous manner that data is acquired. Alternatively, the present invention can be employed to enhance and assist an existing data recording system.
[0206] Moreover, constant monitoring of critical points on a structure to track and determine a history of stress and correlating it to the conditions causing it can allow aircraft manufacturers to better predict design parameters and improve the reliability of the systems while keeping the cost of overhauls and repairs or replacements down to a justified minimum.
[0207] Due to the discrete nature of the sensor output (which, as will be discussed below, is related to the gaps between fixed number of electrodes) it is possible to further simplify the circuitry and automatically implement division of the displacement range into predetermined threshold levels thus simplifying the computation of the desired output as well as watch for the state of contacts to change (i.e. from On to Off or vice versa) in order to initiate data acquisition only when there is a change in strain thus dramatically reducing power consumption of the device. It is contemplated that by varying the gaps' sizes any desirable sensitivity, linearity or non-linearity of the sensor can be achieved, as will be appreciated by the skilled person.
[0208] According to one particular embodiment of the present invention, the system comprises processing means for analyzing the data and storing it in non-volatile memory making it possible to provide an output directly used for estimation of the fatigue of the component due to the mechanical stresses.
[0209] According to another embodiment of the present invention, each sensor comprises maximum/minimum (peak) stress recording means.
[0210] Yet in another embodiment of the present invention, the system comprises RF interface (Bluetooth™ 4 or WI-FI, for instance) for transmitting the data wirelessly and on request to remote means, such as for example a PC, hand-held receiver, Android device or an aircraft data logger.
[0211] According to at least one embodiment of the present invention, the sensors are mechanical deformation sensors employing serially positioned flexible electrical contact members positioned with gaps between them and allowing for a sequential contact of each other by displacement of at least part of said electrical contact plate.
[0212] According to at least one embodiment of the present invention, the sensors are of the MEMS type comprising microelectronic and nano or micromechanical members. They are usually manufactured using same techniques as for manufacturing of integrated circuits for the electronic members and using micromachining (etching, for instance) for the mechanical members.
[0213] The miniature size of the MEMS type sensor described herein permits easy integration into an aircraft or other structure and also allows for combination of several sensors into one package (for enhanced security using parallel data acquisition or to create a rosette or array of sensors for complete assessment of the strain distribution). According to at least one embodiment, at least two sensors are arranged to detect the same stress condition at a certain point assuring that in the event of failure of one sensor, the other sensor can still record the stress spectrum.
[0214] The present invention can be constructed of any suitable materials. To match the deformation of the structure caused by temperature, the base of the sensor can be made of the same material as the structure being tested including metal components (Aluminum, steel, Inconel, Titanium, etc.), composite materials and a variety of other materials that will be readily apparent to the skilled person. In at least one embodiment the base of the sensor is made of the material with the same temperature coefficient as the material being tested. In addition, in some embodiments the internal thermal sensor can provide for correction of the sensor sensitivity at predetermined intervals.
[0215] It is also contemplated that the invention can also provide a method for estimating fatigue of an aircraft component subjected to mechanical stresses using a variety of algorithms for data interpretation, including but not limited to a Rainfall algorithm
[0216] According to at least one embodiment of the present invention, a suitable algorithm for use in connection with the preset invention is disclosed in U.S. Publication No. 20120035864 to Frydenhal, which teaches methods for determining an equivalent mechanical load of a component under a dynamic mechanical loading. A first measurement value of the mechanical load of the component is measured and compared to a first reference value and at least one count value representing the number of load half-cycles of the component is updated based upon the result of comparing, wherein the load half-cycles correspond to a predetermined range of mechanical loads and occur within a time period prior to the measurement of the first measurement value.
[0217] According to at least one embodiment of the present invention, the data can be organized in the memory as a table with approximately 20-50 rows indicating mean values related to stress fluctuation from peak to valley (or vice versa), 20-50 columns indicating the range of stress (from peak to valley or vice versa), two values of absolute maximums of tensile and compressive stress recorded and each cell of the table containing the count of events, preferably with 32 bit (or better) resolution allowing recording of 43 billion counts or more in each cell. The total amount of memory for such tables is in the range of 1.6-11 Kbytes, which allows wireless transmission of all data within fraction of a second. In some embodiments the table can provide complete information on stress spectrum and allow further calculations of the fatigue life and overall loading spectrum.
[0218] It is contemplated that the use of methods presented herein can allow receiving the final estimate of the fatigue level during routine data acquisition by any suitable type of a portable device operated by a user standing beside (or inside) the aircraft within proximity of the RF transmitter range (typically 10-50 m). It is contemplated that conventional wired interfaces, such as but not limited to, RS-482, One-Wire™ or similar interfaces can also be used as will be understood by the skilled person. Due to data organization as disclosed by the present invention and the small size of each individual sensor, a simultaneous acquisition of data from many sensors can be done within a very short period of time. Each sensor can have a unique identification number and password protection for data retrieval and changes to the sensor data logging/processing mission, which in some embodiments can both be accomplished using wireless communication.
[0219] Turning to
[0220] Turning to
[0221] Turning to
[0222] It is contemplated that the present invention employs deformable members that can take a wide variety of forms including, but not limited to, a plate, cantilever, switch or any other suitable shape that will be readily appreciated by the skilled person.
[0223] Turning to
[0224] As seen in
[0225] As will be appreciated by the skilled person, this arrangement permits more cantilevers to be placed within a given amount of surface area (due to the closely spaced, interleaved arrangement) thereby permitting finer resolution and better linearity with respect to the measured displacement A, as discussed in further detail below
[0226] As will be understood by the skilled person, provided that the contact is movable relative to the arrays (which are in turn fixed relative to one another) or vice versa, this arrangement allows the measurement of a displacement A in both directions in cases where the contact moves to the left relative to the arrays 2 (as seen in
[0227] As seen in
[0228] Turning to
[0229] Contact 10 is electrically connected to an electric circuit (at point B), and each cantilever 4 of each array 2 are electrically connected to a circuit (at points A and C).
[0230] In this way a circuit is provided, as seen in
[0231] As can be seen in
[0232] In the present embodiment, at the initial position also shown in
[0233] As contact 10 moves to the left relative to the arrays 2 by a distance corresponding to distance δ, contact 10 makes electrical contact with the distal end 6 of the left outermost cantilever 4 thereby completing the circuit. In this position the output voltage is measurable. As the contact 10 continues to move to the left relative to the arrays 2 by an additional distance δ, the distal end 6 of the left outermost cantilever 4 makes contact with the distal end 6 of an adjacent cantilever 4. As this occurs, a single resistor 12 is removed (shorted) from the circuit and the total measured resistance across points B and C is reduced by the resistance Ω of resistor 12. Therefore, in accordance with Ohm's law, the output voltage V.sub.o measured across points B to C is reduced by a stepwise amount V.sub.Δ, as seen in
[0234] Turning to
[0235] Contact 10 is electrically connected to an electric circuit (at point B), and each cantilever 4 of each array 2 are electrically connected to a circuit (at points A and C). In this embodiment, an additional resistor 14 is placed in electrical communication between contact 10 and each of the arrays 2 such that the circuit is complete when contact 10 is in the initial position between each of the arrays 2.
[0236] In this way a circuit is provided, as seen in
[0237] As can be seen in
[0238] In the present embodiment, at the initial position also shown in
[0239] As contact 10 moves to the left relative to the arrays 2 by a distance corresponding to distance δ, contact 10 makes electrical contact with the distal end 6 of the left outermost cantilever 4 thereby completing the circuit. In this position the output voltage is measurable. As the contact 10 continues to move to the left relative to the arrays 2 by an additional distance δ, the distal end 6 of the left outermost cantilever 4 makes contact with the distal end 6 of an adjacent cantilever 4. As this occurs, a single resistor 12 is removed (shorted) from the circuit and the total measured resistance across points B and C is reduced by the resistance Ω of resistor 12. Therefore, in accordance with Ohm's law, the output voltage V.sub.o measured across points B to C is reduced by a stepwise amount V.sub.Δ, as seen in
[0240] Turning to
[0241] Contact 10 is electrically connected to an electric circuit (at point V.sub.C), and each cantilever 4 of each array 2 are electrically connected to a circuit (at points A and C). Further, the entire circuit is connected to point B and ground as seen in
[0242] In this way a circuit is provided, as seen in
[0243] As can be seen in
[0244] In the present embodiment, at the initial position also shown in
[0245] As contact 10 moves to the left relative to the arrays 2 by a distance corresponding to distance δ, contact 10 makes electrical contact with the distal end 6 of the left outermost cantilever 4 thereby completing the circuit. However, and as discussed above, as the electrical connection is completed between left outermost cantilever 4 and contact 10 the first fuse 16 connected to the ground is receiving voltage Vc. Thus, as proximal end 8 of cantilever 4 is in electrical connection with ground through fuse 16 the fuse is blown (burned). After reaching this contact state the output resistance proportional to the peak displacement is measurable. As the contact 10 continues to move to the left relative to the arrays 2 by an additional distance δ, the distal end 6 of the left outermost cantilever 4 makes contact with the distal end 6 of an adjacent cantilever 4. As this occurs, a single resistor 12 previously shorted by fuse 16 is added to the circuit and the total measured resistance across points B and C is increased by the resistance Ω of resistor 12. Therefore, in accordance with Ohm's law, the output resistance R.sub.o measured across points B to C is increased by a stepwise amount R.sub.Δ, as seen in
[0246] As contact 10 moves to the right relative to the arrays 2 by a distance corresponding to distance δ, contact 10 makes electrical contact with the distal end 6 of the right outermost cantilever 4 thereby completing the circuit. As discussed above, as the electrical connection is completed between right outermost cantilever 4 and contact 10 the first fuse (on the right from the contact 10) 16 connected to the ground is receiving voltage Vc. Thus, as proximal end 8 of cantilever 4 is in electrical connection with ground through fuse 16 the fuse is blown (burned). After reaching this contact state the output resistance proportional to the peak displacement is measurable. As the contact 10 continues to move to the left relative to the arrays 2 by an additional distance δ, the distal end 6 of the left outermost cantilever 4 makes contact with the distal end 6 of an adjacent cantilever 4. As this occurs, a single resistor 12 previously shorted by fuse 16 is added to the circuit and the total measured resistance across points B and C is increased by the resistance 0 of resistor 12. Therefore, in accordance with Ohm's law, the output resistance R.sub.o measured across points B to C is increased by a stepwise amount R.sub.Δ, as seen in
[0247] Turning to
[0248] Turning to
[0249] Further, an additional resistor 15 is provided to connect the contact 10 to the adjacent cantilevers 4 in electric communication.
[0250] With reference to
[0251] Turning to
[0252] In this embodiment, cantilevers 4 are connected in electrical communication by way of a network of resistors 12 that are arranged in a branched relationship with one another. Contact pads 23 are provided to electrically connect cantilevers 4 and resistors 12 to an overall electrical circuit. Further, additional resistors 15 are provided to connect the contact 10 to the adjacent cantilevers 4 in electric communication.
[0253] With reference to
[0254] Turning to
[0255] In this embodiment, cantilevers 4 are connected in electrical communication by way of a network of resistors 12 that are arranged in a series relationship with one another. In this embodiment, a series of fuses 16 is provided to connect the proximal end 8 of each cantilever 4 to ground. Contact pads 23 are provided to electrically connect cantilevers 4 and resistors 12 to an overall electrical circuit. Further, diodes 18 are provided to connect the contact pad 17 to the adjacent cantilevers 4 in electrical communication. Contact pads 23 may be used to wire the sensor to the external circuitry.
[0256] With reference to
[0257] Turning to
[0258] Step 1 illustrates a Silicon wafer prior o undergoing any processing steps;
[0259] Step 2 illustrates masking the silicon wafer;
[0260] Step 3 illustrates forming a layer of silicon oxide as electric isolator;
[0261] Step 4 illustrates the removal of the masking as per step 2;
[0262] Step 5 illustrates forming the conductive layer and masking it with a pre-determined pattern;
[0263] Step 6 illustrates forming an electric circuit on the conductive layer;
[0264] Step 7 illustrates removal of masking per step 5;
[0265] Step 8 illustrates the bonding of the silicon wafer to a substrate (for example, a silicon wafer);
[0266] Step 9 illustrates masking of the top silicon wafer to create a pattern of cantilevers;
[0267] Step 10 illustrates removal of masking per step 9;
[0268] Step 11 illustrates forming cantilevers on the top silicon wafer;
[0269] Step 12 illustrates the removal of the masking per step 9;
[0270] Step 13 illustrates the removal of the sacrificial layer (silicon oxide, for instance) formed in steps 3 and 4; and
[0271] Step 14 shows metallization of cantilevers by conductive layer deposition or Silicon doping and forming the sensor circuitry.
[0272] Turning to
[0273] With reference to
[0274] These metals include, but not limited to such materials as gold and aluminum. To further facilitate plastic deformation responsible for mechanical memory of the cantilever 4 deflection after the source of deformation is released, the hinge 5 can have a notch (not shown) or a recess providing for stress concentration and/or reduction of the cross section where the elastic deformations occur.
[0275] Initially, the cantilevers are spaced apart by gaps 25, however when a displacement force is applied to the distal end 6 of an outer cantilever 4 the distal end 6 makes contact 27 with the distal end 6 of an adjacent cantilever 4, as illustrated in
[0276] Turning to
[0277] This effect is further illustrated in
[0278] At least one embodiment of a device incorporating these principles on a MEMS scale is illustrated in
[0279] More specifically, in this embodiment a resistor 12 is placed in electrical connection between adjacent cantilevers. Further, in this embodiment each cantilever 4 within a given array 2 has different lengths (measured from distal ends 6 to fixed ends 8) that increase sequentially as one moves toward the outer edges of the substrate 20 (that is, away from contact 10).
[0280] Turning to
[0281] Therefore, and as can be seen in
[0282] On the other hand, for each decrease in displacement δ that occurs a corresponding increase in the Output Resistance R can also be measured across the circuit (which in fact corresponds to the differential Resistance measured between points C and B). As will be understood by the skilled person, this corresponds to the device being placed in a condition of compression.
[0283]
[0284] With reference to
[0285] Turning to
[0286] The mounting body 40 has positions 123 for placement of standoffs 124 which are shown in more detail further down in
[0287] It is contemplated that in some embodiments of the present invention first end 42 is movable relative to second end 44 such that mounting body 40 can contract or expand in concert with the expansion or contraction of the underlying support structure 46. This can be achieved in a number of ways. For example, a number of slots can be provided in mounting body 40 that permit first end 42 to move relative to second end 44, however other arrangements are also contemplated including hinges or pivoting joints that can be incorporated in mounting body such that first end 42 can move relative to second end 44, thereby transferring the expansion or contraction of the underlying support structure 46 to the deformable members of the MEMS sensor, thereby permitting measurement of strain and displacement in the underlying support structure 46.
[0288] As seen in
[0289] The substrate 20 is connected to the body 40 preferably at its centerline using bounding compound 125 during the assembly of the sensor. Again, mounting substrate this way provides for its free expansion or contraction due to temperature fluctuations without imposing any stress on the mounting body 40.
[0290] As will be discussed in further detail below, this arrangement allows for the body 40, to be able to deform (and subsequently measure via displacement of the MEMS sensory means) both compression and tension.
[0291]
[0292] Standoffs 124 hold the printed circuit board 126 with all electronic circuitry needed for operation of the HUMS, namely, but not limited to: battery 127, CPU, MCU, FPGA or CPLD 128, F-Ram or other type of memory 129, interface and/or wireless transceiver (not shown) and connector 130. All devices are mounted inside housing 131 which is hermetically sealed. During mounting process, the housing 131 is glued to the surface 46 as well as sealing deformable compound (silicone sealant, for instance) 132 applied previously (during gauge manufacturing process) or during installation of the gauge is provided to ensure that interior volume of the sensor is not affected by moisture, dust or debris.
[0293] Further, detail A is shown to clarify on possible installation techniques described in more detail in the following
[0294]
[0295] A housing 131 and elastic seal 132 are glued to the structure, preferably in one step with gluing the posts 42 and 44. Connector 130 provides for a wired interface (such as, for example, RS-485). As mentioned, the printed circuit board 126 is connected to the base 40 via standoffs 124 in a such way that the attachment does not compromise the freedom of two parts of the base to move one relative to another, i.e. all of them are connected to one part of the base (see attachment points indicated in
[0296] The nodes structure can also be employed to collect data from a number of strain gauges and transmit data via a dedicated transceiver or wired interface (parallel, or serial, One-Wire™, for instance).
[0297] A variety of attachment options are presented in the following illustrations: In
[0298] It is contemplated that a wide variety of mechanical amplification means can be employed in connection with present invention including sloped beams 141 (single or arranged as parallelogram mechanisms) with hinges or flexural hinges 142, as shown in for example in
[0299] Turning to
[0300] Turning to
[0301] As most mechanical amplification mechanisms are non-linear, compensation for that effect can be done assuring variable size gaps between cantilevers as described in
Δ=a−a.sub.o=(((L/2).sup.2+a.sub.o.sup.2)−(L/2−ε*L/2).sup.2).sup.0.5−a.sub.o,
where “a” is the height of the sloped beam after deformation of the tested structure and “a.sub.o” is the height of the sloped beam at initial state.
[0302] The principle of thermal compensation of the MEMS sensor is illustrated in
[0303] Taking a close look at the state of two adjacent cantilevers 4 as shown in
X.sub.1′=X.sub.1+Ks*ΔT* X.sub.1=X.sub.1*(1+Ks*ΔT);
X.sub.2′=X.sub.2+Ks*ΔT* X.sub.2=X.sub.2*(1+Ks*ΔT),
Where:
[0304] Ks is coefficient of thermal expansion of the substrate the cantilevers 4 are anchored to; [0305] ΔT=T.sub.2−T.sub.1 is temperature difference between the final and initial state of the sensor, ° C.
[0306] Accordingly, the thermal deformation of the cantilevers in direction of axis X itself will be:
t.sub.1′=t.sub.1+K*ΔT* t.sub.1=t.sub.1*(1+K*ΔT);
t.sub.2′=t.sub.2+K*ΔT* t.sub.2=t.sub.2*(1+K*ΔT),
where “t” is the initial thickness of the cantilever in direction X; [0307] K is coefficient of thermal expansion of the material of cantilevers.
[0308] Therefore, the final size of the gap δ.sub.o′ will be:
δ.sub.o′=X.sub.2′−t.sub.2′/2−X.sub.1′−t.sub.1′/2
δ.sub.o′=X.sub.2*(1+Ks*ΔT)−t.sub.2*(1+K*ΔT)/2−X.sub.1*(1+Ks*ΔT)−t.sub.1*(1+K*ΔT)
or, if t.sub.1=t.sub.2=t
δ.sub.o′=X.sub.2*(1+Ks*ΔT)−X.sub.1*(1+Ks*ΔT)−t*(1+K*ΔT)
[0309] Thus, the condition of unchanged gap (full thermal stability) will require the following equation to be observed:
δ.sub.o′=δ.sub.o
Where δ.sub.o=X.sub.2−X.sub.1−t
X.sub.2*(1+Ks*ΔT)−X.sub.1*(1+Ks*ΔT)−t*(1+K*ΔT)=X.sub.2−X.sub.1−t;
X.sub.2*Ks*ΔT−X.sub.1*Ks*ΔT=t*K*ΔT;
X.sub.2*Ks−X.sub.1*Ks=t*K;
K/Ks=(X.sub.2−X.sub.1)/t.
[0310] If b=(X.sub.2−X.sub.1) represents the spacing between cantilevers and t is the thickness of the cantilever, i.e. b=t+δ.sub.o, the ratio K/Ks is close to 1. For example, if t=20 μm and gap δ.sub.o=2 μm, the ratio
K/Ks=(20+2)/20=1.1.
[0311] In many embodiments the substrate and cantilevers are made of silicon crystal (SIC) or polycrystalline silicon (polysilicon). If the substrate is made of SIC where coefficient of thermal expansion Ks=2.6 ppm/° C. and the device layer is composed of polycrystalline silicon where coefficient of thermal expansion K=2.8 ppm/° C., the desired ratio K/Ks=2.8/2.6=1.08˜1.1 is approximately achieved and gives the nearly perfect thermally compensated MEMS sensor for the example of sensor geometry used here above.
[0312] Another combination of materials can be Alumina for the substrate (Ks=5.4 ppm/° C.) and Ruthenium for cantilevers (K=6.4 ppm/° C.). therefore K/Ks=6.4/5.4=1.18 and so on.
[0313] In addition to the embodiments disclosed herein, alternative approaches that will be readily appreciated by the skilled person are also contemplated for use in connection with the present invention including thermal compensation techniques by design, thermal compensation by acquiring temperature readings at continuously or at pre-determined time intervals and electronic compensation for the signal read from the sensor output are provided for in the present invention as will be described in more detail later.
[0314] It is contemplated that there are numerous variants of use of the present MEMS sensor. For instance, a sensor configured to measure shear deformation is shown in
[0315] Another embodiment of the MEMS strain sensor is a rosette as shown in
[0316] The rosette allows for simultaneous measurement of all planar vector components of the strain (stress) at given point of measurement not unlike in a conventional strain gauge rosette. In tis particular arrangement the sensor has a base 40 with flexural pivoting points allowing for its deformation and attachments 160 and 161 wherein the attachment 161 in the center of the base 40 is not always necessary as the strain vectors can be assessed through measurement of the relative displacement of only three points (160).
[0317] A variety of arrangements of flexible contact members vs. drive member is presented in
[0318] It will be appreciated that a combination of the above techniques and arrangements can be used by one skilled in art and also employing a variety of techniques available for manufacturing of MEMS devices.
[0319] The MEMS sensor can be arranged to receive an angular movement of the drive member as shown in
[0320] Yet another approach is to provide MEMS sensor where spacing between cantilevers can vary on one side of the array compared to another side thus providing for sequential contacts during movement of one array against another (
[0321] Sequential contact between deformable members made, for instance in a form of stacked bridges being bent as shown in
[0322] Still, the sequential contact can be achieved by collapsing or buckling of cantilevers having different length as shown in
[0323] Sequential contact state between drive members and deformable contacts (or vice versa) can be achieved given an example shown in
[0324] It will be appreciated by one skilled in the art that significant scaling down of the MEMS sensors described is achievable. Going to nano-scale systems the complete sensor (including its variants for detecting/recording volume strain caused displacement (3D) or multi-axial acceleration forces, pressure, loads, etc.) the volume as small as 1 mm.sup.3 can contain up to 4 arrays on deformable members providing resolution of 1000 displacement states and higher. Even with today's technology this task is achievable without much modification to the manufacturing process. Going further, such systems as microphones and sound amplifiers driven by signal digitized directly by sensor into discrete but undetectable for ear levels can lead to systems eliminating amplifier at all, thus providing for conversion of a displacement into much amplified signal directly, using digital technology.
[0325] The term “state of the contacts” in present invention should be represented in a broad fashion, i.e. it can be manifested as an electrical contact providing lower resistance (Ohmic) circuit between electro-conductive layers, using electron-tunneling effect, change in vibration state of a particular deformable member of an array, its thermal conductivity or temperature state, etc. Thus any combination of the technologies applicable for detection of the state of the contact can be applied per present invention.
[0326] “Driving member” shall also be broadly interpreted as a rigid or flexible member that may comprise a plurality of cantilevers or other means as illustrated in
[0327] As sensor sensitivity is of major importance, a variety of calibration techniques can be envisioned. For instance a removable attachment of the MEMS strain sensor to a calibration beam (not unlike calibration of the batches of strain gauges is done) by removable adhesive, frozen water or another substance, fasteners, friction, etc. Thermal sensitivity calibration can be also done and a specific correction parameter entered into MEMS sensor data acquisition system to ensure temperature correction.
[0328] Turning to acceleration sensitivity of he MEMS sensor the following example illustrates that an array of cantilevers 600 μm long with cross-section of 20 by 20 μm and gap between cantilevers of 2 μm can withstand acceleration in the plane of the array of up to 5000 G without causing closure of any gap between cantilevers.
[0329] In this particular instance, given the cantilever is formed from polycrystalline silicon with density of 2.33 g/cm2 or 2.33×10−6 μg/μm3 the mass of its free length is
m=20*20*600*2.33×10.sup.−6=0.56 μg=0.56*10.sup.−9 kg.
[0330] The distributed load on cantilever beam from acceleration will be: [0331] W=m*a*(G=9.82 kg/m.sup.2)/L, where a is acceleration, L is the free length of the cantilever beam.
[0332] Therefore the load will be:
W=a(G)*0.56*10.sup.−9[kg]*9.82[kg/m2]/600*10.sup.−6=a(G)*9.15*10.sup.−6 [N/m]
[0333] Maximum deflection of the free end of the cantilever beam is:
Δc=W*L.sup.4/8/E/I,
where E is modulus of elasticity (Young's modulus) of polycrystalline silicon and I is moment of inertia of the cantilever beam cross-section (note, that the practical thickness of the polycrystalline silicon layer is typically much less than 20 μm, we use this example as explanatory only).
[0334] E=155 GPa or 0.155 N/μm.sup.2
[0335] I=20*203/12=13333 μm.sup.4=1.33*10−20 m.sup.2 (for the rectangular cross-section)
Δc=a(G)*(9.15*10.sup.−6 [N])*0.00064[m.sup.4]/8/155*109[Pa]/1.33*10.sup.−20[m.sup.4]=a(G)*7.19*10.sup.−11[m]=a(G)*7.19*10−5[μm].
[0336] Thus, at acceleration a(G)=5000 the total deflection of a single cantilever will be Δc=5000*7.19*10.sup.−5=0.35 μm, which is less than a gap of 2 μm.
[0337] Turning now to stress condition of the cantilever beam at acceleration of 5000 G (which is higher than current specification from EUROCAE—European Organisation for Civil Aviation Equipment—requires for an airplane flight recorder to withstand the acceleration of 3400 G), the maximum bending stress at anchored part of the cantilever beam is:
σ=W*L.sup.2/2l*h/2,
where h=20 μm=20*10.sup.−6m is the height of the cantilever cross-section.
[0338] Thus:
σ=5000*9.15*10−6*0.0006[m].sup.2/2/1.33*10.sup.−20[m2]*20*10.sup.−6[m]/2=6.19*10.sup.6 [Pa]==6.19 MPa,
which is much less than the fracture strength of the polysilicon conservatively estimated at 1.5 GPa.
[0339] For reduction of shock effect of the strain on sensor base 40 the best methodology is to reduce its size so that stress on attachments of the sensor to a test structure can be reduced. To that extend it is desirable to further scale down the MEMS sensor and provide better sensitivity to a displacement.
[0340] As an example the length of cantilever beams can be reduced to 100 μm, its height h to 4.75 μm and its width to 2 μm. Thus, with current technology the size of the gap between cantilevers with aspect ratio of deep etching 10 (conventional technique) can comprise 0.475 μm and with aspect ratio of 100 it can go down to 0.0475 μm. Given the sensor resolution of 1% it will require two arrays of cantilevers with 100 cantilevers on each side of the shuttle (drive member). With shuttle width 500 μm, the overall size of the MEMS sensor will be: Width 200*(2+0.00475)+500=901 μm and the height (including anchoring pads of 20 μm long) will be 2*(100+20)=240 μm. With reasonable size of the substrate allowing for electric circuits, resistor's matrix, fuses, temperature sensor and other devices, like integrated CPLG or FPGA the overall size of the MEMS sensor can be as little as 1×0.5 mm.
[0341] The total displacement cumulated when all gaps are closed will be 100*0.475=47.5 μm (aspect ratio 10). Given modulus of elasticity of aluminum alloy of the test structure be in a range of 71.7 GPa (Al Alloy 7075-T6) and maximum expected level of strain of 500 MPa, the sensor base length required will be only Ls=47.5/500*(70*10+3)=6650 μm=6.65 mm.
[0342] Thus, with further scaling down by integration of electronic components in forms of dies or components integrated directly on the MEMS sensor substrate (or on a substrate sandwiched and wired with it, for instance) the complete strain sensor with data acquisition, processing and data storing means can comprise a package approximately 5 mm wide, 9 mm long and 2 mm high, which is comparable with the size of an ordinary stand alone resistive strain gauge.
[0343] As it was mentioned before, by varying size of the deformable members of the arrays different response to the force required to achieve the displacement can be achieved: linear, non-linear, etc. Due to possibility of varying the sizes of gaps between adjacent deformable members this response can be further augmented.
[0344] Due to a variety of possibilities to producing a wake up signal when the state of the contacts changes (by acquiring state of the contact, comparing current value of displacement with previous one - either digitally or in analog format, etc.), it is contemplated that the present invention provides for an extremely low power consumption device that is mechanically stable and can be temperature compensated for a broad range of temperatures. The inner volume occupied by the MEMS sensor can contain vacuum, dielectric fluid, gas or a combination of any substances facilitating precision of recognition of contact state between parts of the sensor affected by displacement (preservation of electric contacts from oxidation, for instance), providing vibration damping effect, eliminating or reducing stickiness problem between adjacent micro and nano--scale parts, improving the overall durability and performance of the sensor, etc.
[0345] The variants of the possible arrangement of the deformable members into arrays are numerous and one skilled in art can come up with a number of practical solutions.
[0346] Without limitations, embodiments included herein can include bridge beams as shown in
[0347] In order to avoid the stickiness problem that results from attraction forces customary for nano-devices it is contemplated that the contacting ends of the deformable members (cantilevers, for example) can have dimples. Plain rounded ends of cantilevers 4 are shown in
[0348] Turning now to different embodiments of the deformable member itself,
[0349] A variety of means to provide electro-conductive surfaces on different sides of the deformable member can be illustrated by an example given in
[0350] Alternatively a Piezo-active material 175 can be applied to any part of deformable members for a number of reasons, such as, but not limited to: in order to harvest the energy from deformations received; by inducing vibrations of the deformable member for detection of the state of the contact (as seen in
[0351] It is further contemplated that is some embodiments power harvesting devices can be incorporated into the base of the strain sensor as shown in
[0352] Turning now to a discussion of suitable manufacturing techniques and in order to achieve smaller size gaps (which, as will be readily appreciated by the skilled person, defines the resultant MEMS sensor resolution) the height of the cantilever beam can be made differently, i.e. reduced at the portions of the cantilevers defining the gaps wherein, with given aspect ratio of etching the smaller gaps can be achieved as shown in
[0353] As mentioned previously, the contact states can be recognized via electric (Ohmic resistance) or, alternatively, by other means. In embodiments employing electric contact recognition, the sensor can have a variety of circuits associated with deformable members such as capacitors connected in parallel between the deformable members (as seen in
[0354] Another embodiment of a MEMS sensor output is direct digital output as schematically shown in
[0355] The program and algorithm of operation embedded into CPLD, FPGA or CPU/MCU can detect and discard false states of the MEMS sensor, such as presence of two contacts states on opposite arrays 2 simultaneously (can be caused by sticky contacts, for instance), presence of open contacts within the range of displacement when all contacts are supposed to be closed, etc. This further enhances the MEMS sensor capabilities, increases its durability and reliability of data.
[0356] An instance of a standard stand alone MEMS displacement sensor therefore can include MEMS device with 50 contacts on each array of deformable members (50 ranges for compression and 50 ranges for tension or negative/positive displacement), and integrated CPLD with 8 bits parallel output providing for accurate detection of each range of the displacement and consuming as little as 100 nA of current. A digital comparator can be used to provide state of contacts' information for providing data processing and interrupts only when the state of the contacts changes, which further reduces power consumption related to operation of CPU/MCU and memory.
[0357] In some embodiments, it is contemplated that the deformation of the cantilevers or any other type of deformable members itself can be used to produce electric signal given the deformable member has a Piezo-Electric element associated with it, i.e. has Piezo-electric and/or Piezo-resistive effect used in generation of a digital or analogue output signal and self powering the circuitry or any suitable combination thereof. Electron charge carried by a cantilever can also be utilized to provide indication of the state of contact which should be apparent for one skilled in art. Also, common techniques used in tunnel microscopy to detect contact or proximity state between deformable members of MEMS array can be utilized to the advantage of present invention. Lastly, as elaborated on before vacuum or gas or fluid filling of the MEMS sensor can be of use to provide effects necessary for MEMS sensor stability (electrical, for instance by protecting contacts from oxidation, corrosion, erosion), damping effect to reduce possible vibration of the cantilevers at certain frequencies (fluid can be used), provide anti sticking effect which may assist in scaling down the MEMS sensor size and bring it to nano-scale, electrical conductivity which can be achieve in vacuum or by ionized fluid (gas or liquid), etc.
[0358] At least one embodiment arrangement for a Health & Usage Monitoring System (HUMS) is presented in
[0359]
[0360] The wake up signal can be generated by additional circuitry called the “Contacts' State Detector” which will be further described in
[0361] In other embodiments, a low power Field Programmable Gates Array device (FPGA) can be used to compose the HUMS architecture, as illustrated in
[0362] A number of possible positions for peak strain sensors and HUMS sensors when oriented on a commercial aircraft are shown in
[0363] On the contrary, it is contemplated that the strategic positioning of the HUMS sensors can be where fatigue damage accumulation can occur and where the prediction of a particular component's life can be essential for both aircraft safety and the potential reduction of maintenance costs.
[0364] It is contemplated that the positioning of the sensors can preferably be symmetrical and positioned on both sides of an aircraft. In addition, the parallel use of sensors at one given point can increase sensor's reliability and provide better assurance for consistent and reliable data.
[0365] It is contemplated that the devices described in the present invention can be used in a variety of modes, such as but not limited to: [0366] a) stand alone data logging systems; [0367] b) stand alone data logging and processing systems; [0368] c) sensors connected to aircraft data acquisition systems; [0369] d) stand alone peak stress sensors; [0370] e) MEMS displacement sensors responding to changes in, for example, direct displacement or strain, displacement caused by acceleration or shock, displacement caused by temperature, displacement caused by inertial forces (rotation for instance) and displacement caused by vibration or acoustic waves.
[0371] Turning now to data processing apparatus and algorithms of operation,
[0372] One potential embodiment for producing a wakeup signal by differentiating the steps in voltage output of the MEMS sensor is shown in
[0373] As will be understood by the skilled person, when considering a wakeup signal the exact time dependent analysis of the overall strain history is irrelevant for the estimation of the fatigue life time, and accordingly the raw signal can be compressed into “sorted events” as presented in
[0374] It is further contemplated that time stamps can be associated with specific events, such as but not limited to temperature changes, reaching peak or pre-determined values, accumulation of specific number of strain cycles, among other specific events that will be readily understood by the skilled person and as illustrated in
[0375] An example of one embodiment of a data processing scheme is illustrated in
[0376] It is also contemplated that the temperature sensor data acquisition can be linked to events or predetermined periods of time, which can preferably allow for optimum adjustment of the MEMS sensor output signal for its accuracy. Although as it has been previously discussed that the present MEMS sensor can provide excellent temperature stability by design, in some embodiments it is desirable to periodically condition the raw signal and provide for even better temperature compensation for increased accuracy. It is contemplated that this could greatly improve sensor's accuracy in such severe conditions as space missions where temperature can vary in a much greater range.
[0377] One embodiment of a preferred algorithm for data processing for use in connection with the present invention is the so-called “Rainflow” algorithm shown in
[0378] This resultant stored data can include mean values of ranges of the strain (between peaks and valleys) defined by horizontal rows and ranges of the strain (between peaks and valleys) defined in vertical columns. Each bin of the table can contain a count of particular events. In addition, the table contains absolute peaks of tensile and compressive strain (or stress) and other parameters which can be of use.
[0379] Due to the processing of information on board of the HUMS in accordance with the present invention and signal discrimination automatically performed by the MEMS sensor, the overall system can be greatly simplified and, based on the power consumption of presently existing electronic components. the working life of autonomous operation of the sensor can be extended for an extended period (and in some instances for up to 10 years) without battery replacement. Alternatively, available power harvesting devices and connection of the HUMS to the on-board power system can provide for a variety of flexible solutions which are well suited to applications in the aerospace and other related industries.
[0380] A simplified algorithm of processing of data on board of the HUMS equipped with MEMS sensor per present invention is described in
[0381] It is obvious that the foregoing embodiments of the invention are examples and can be varied in many ways. Such present or future variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.