CIRCUIT ARRANGEMENT FOR REDUCING THE MAXIMUM ELECTRICAL FIELD STRENGTH, HIGH VOLTAGE GENERATION UNIT WITH SUCH A CIRCUIT ARRANGEMENT AND X-RAY GENERATOR WITH SUCH A HIGH VOLTAGE GENERATION UNIT

Abstract

The disclosure specifies a circuit arrangement having electronic first components arranged on a circuit board and lying at high-voltage potential. The circuit arrangement includes functionless, electronic second components lying at high-voltage potential, which are arranged on the circuit board adjacent to the electronic first components, and configured to reduce the maximum electrical field strength between the first components and a reference potential and/or between pads of the circuit board and the reference potential. Through the additional, functionless components, the maximum electrical field strength between electronic components at high voltage and at a reference potential will be reduced. The disclosure also specifies a high voltage generation unit and an x-ray generator.

Claims

1. A circuit arrangement comprising: electronic first components arranged on a circuit board and lie at high-voltage potential; and functionless, electronic second components lying at high-voltage potential, wherein the electronic second components are arranged on the circuit board adjacent to the electronic first components, and wherein the electronic second components are configured to reduce the maximum electrical field strength between the first components and a reference potential and/or between pads of the circuit board and the reference potential.

2. The circuit arrangement of claim 1, wherein the electronic second components are short-circuited.

3. The circuit arrangement of claim 1, wherein the electronic second components are arranged at points on the circuit board where the maximum electrical field strength occurs.

4. The circuit arrangement of claim 1, wherein the electronic first components and the electronic second components are surface mount device components.

5. The circuit arrangement of claim 1, wherein the electronic first components are diodes.

6. The circuit arrangement of claim 1, wherein the reference potential is a chassis ground.

7. The circuit arrangement of claim 1, wherein the electronic second components are capacitors.

8. The circuit arrangement of claim 1, wherein the electronic second components are arranged in a shape of a circular arc.

9. The circuit arrangement as claimed in one of the preceding claims, characterized by: of claim 1, further comprising: vias lying at high-voltage potential in the circuit board adjacent to the electronic second components.

10. The circuit arrangement of claim 1, further comprising: pads embodied on the circuit board for contacting the electronic first components, wherein the pads are completely covered by the electronic first components.

11. A high voltage generation unit comprising: at least one high-voltage transformer having a circuit arrangement for rectifying a high voltage connected to the high-voltage transformer, wherein the circuit arrangement comprises: electronic first components arranged on a circuit board and lie at high-voltage potential; and functionless, electronic second components lying at high-voltage potential, wherein the electronic second components are arranged on the circuit board adjacent to the electronic first components, and wherein the electronic second components are configured to reduce the maximum electrical field strength between the first components and a reference potential and/or between pads of the circuit board and the reference potential.

12. An x-ray generator comprising: a parallel-tuned inverter; and a high voltage generation unit having a circuit arrangement for rectifying a high voltage connected to the high-voltage transformer, wherein the circuit arrangement comprises: electronic first components arranged on a circuit board and lie at high-voltage potential; and functionless, electronic second components lying at high-voltage potential, wherein the electronic second components are arranged on the circuit board adjacent to the electronic first components, and wherein the electronic second components are configured to reduce the maximum electrical field strength between the first components and a reference potential and/or between pads of the circuit board and the reference potential.

13. The circuit arrangement of claim 2, wherein the electronic second components are arranged at points on the circuit board where the maximum electrical field strength occurs.

14. The circuit arrangement of claim 13, wherein the electronic first components and the electronic second components are surface mount device components.

15. The circuit arrangement of claim 14, wherein the electronic first components are diodes.

16. The circuit arrangement of claim 15, wherein the reference potential is a chassis ground.

17. The circuit arrangement of claim 16, wherein the electronic second components are capacitors.

18. The circuit arrangement of claim 5, wherein the electronic second components are capacitors.

19. The circuit arrangement of claim 7, wherein the electronic second components are arranged in a shape of a circular arc.

20. The circuit arrangement of claim 9, further comprising: pads embodied on the circuit board for contacting the electronic first components, wherein the pads are completely covered by the electronic first components.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Further special features and advantages of the disclosure will become apparent from the explanations given below of a number of exemplary embodiments based on schematic diagrams.

[0025] FIG. 1 depicts a circuit arrangement of an x-ray generator in accordance with the prior art.

[0026] FIG. 2 depicts an example of a circuit arrangement with field-controlling components.

[0027] FIG. 3 depicts an example of a circuit arrangement with field-controlling components and field-controlling vias.

[0028] FIG. 4 depicts an example of a circuit arrangement with field-controlling components arranged in a circular arc.

[0029] FIG. 5 depicts an example of a graph of the electrical field strength.

DETAILED DESCRIPTION

[0030] The disclosure is to be described by way of example for a diode module of a high voltage generation unit. The diode module is responsible for the rectification of the high voltage.

[0031] Solder surfaces (also referred to as pads) with thicknesses in the range of 35 μm on the circuit boards are used for contacting of electronic components. The pads may have sharp metallic edges, which may be responsible for high-voltage discharges. The internal structure of diodes and their contacts includes, inter alia, cost-optimized punched parts in the millimeter range with microscopic tips and edges, which for their part may have high tolerances. The geometries of the pads for the components are predetermined by the SMD technology, so that sharp-edged structures arise on the pads and on the diodes, which, with high electrical voltages, lead to discharges in the insulation system in relation to a reference potential.

[0032] In a field simulation by finite element method (FEM) of the electrical field strength on a model of a printed circuit board with diodes, it was clear that at the edges of the diodes or at the sides of the pads a maximum electrical field strength of around 23 kV/mm may occur.

[0033] FIG. 2 depicts how, with an SMD circuit board with diodes 7 (=electronic first components) for rectification, which will be operated at high-voltage potential, a field control (=reduction of the maximum electrical field strength) may be undertaken in a low-cost and space-saving manner.

[0034] At the top, FIG. 2 depicts a cross-section through a circuit board 9 with diodes 7 and shows the associated view from above in the middle. For field control, in addition to the diodes 7, four electronic second components 8, (e.g., capacitors), without any function with selected geometries for field control will be attached at the critical points on the circuit board 9 adjacent to the diodes 7. In certain examples, the capacitors or resistors in the SMD sizes (e.g., 1210, 1206, 0805, 0603 . . . ) are attached on the end face side to the last diodes 7. Depicted at the bottom in FIG. 2 is a view from above with two second components 8, which are likewise arranged on the end face side.

[0035] Capacitors of size 0805 (length=2.0 mm, width=0.8 mm, height=1.25 mm) are shown to be especially advantageous, because these have large metallic terminals, which serve to homogenize the electrical field. The second components 8, as required, may be attached as a chain or individually laterally or on the end face side in relation to the surroundings. The second components 8 do not have any function and are short-circuited.

[0036] Multi-layer ceramic capacitors (MLCC) are especially suitable as a result of their internal structure for lateral fitting. The metallic surfaces to increase the internal capacitance assume the potential of the two contacts and thus homogenize the electrical field.

[0037] In addition, the field control may be improved with pads 10 hidden in relation to the surroundings, in that the first components (e.g., diodes 7) protrude somewhat and thus cover the sharp edges of the pads 10.

[0038] FIG. 3 depicts a circuit module with a circuit board 9 in cross-section, in which, in addition to the components 8 and the diodes 7, vias 11 are provided on the outer pads 10. The vias 11 have an additional field-controlling effect.

[0039] FIG. 4 depicts a view from above of a circuit module with diodes 7 and second components 8 on a circuit board 9, in which the field-controlling second components 8 are arranged in a circular arc on the end-face side. This emulates a curvature, which reduces the maximum electrical field strength even further.

[0040] In FIG. 5, in a graph, the field control effect is depicted by way of example using a model of a series of diodes with 3×5 diodes arranged in parallel, wherein all diodes will be operated at a potential of +15 kV. The critical distance to a chassis wall at ground potential amounts to 25 mm in the model. The graph shows the first curve A, which shows the electrical field strength E along the diode series without field-reducing second components.

[0041] If five second components (e.g., without moving the SMD diodes) are attached to the diode series on the end-face side similar to the circuit arrangement in FIG. 2 and set to the identical high-voltage potential +15 kV, the graph of the electrical field strength E shown by the second curve B is produced. Along the diode series identical field strengths E will be achieved, while in the area of the last diode, adjacent to the second components, a reduction of the maximum field strength in relation to the surroundings of around 40% (e.g., 12 kV/mm instead of 19 kV/mm) will be achieved.

[0042] Although the disclosure has been illustrated and described in detail by the exemplary embodiments, the disclosure is not restricted by the disclosed examples and the person skilled in the art may derive other variations from this without departing from the scope of protection of the disclosure. It is therefore intended that the foregoing description be regarded as illustrative rather than limiting, and that it be understood that all equivalents and/or combinations of embodiments are intended to be included in this description.

[0043] It is to be understood that the elements and features recited in the appended claims may be combined in different ways to produce new claims that likewise fall within the scope of the present disclosure. Thus, whereas the dependent claims appended below depend from only a single independent or dependent claim, it is to be understood that these dependent claims may, alternatively, be made to depend in the alternative from any preceding or following claim, whether independent or dependent, and that such new combinations are to be understood as forming a part of the present specification.