Silicon Interposer Sandwich Structure for ESD, EMC, and EMC Shielding and Protection
20170358552 · 2017-12-14
Assignee
Inventors
- William E. BREINER (Armonk, NY, US)
- BING DANG (Armonk, NY, US)
- MARIO J. INTERRANTE (Armonk, NY, US)
- JOHN U. KNICKERBOCKER (Armonk, NY, US)
- SON K. TRAN (Armonk, NY, US)
Cpc classification
H01L2924/15787
ELECTRICITY
H01L2924/19105
ELECTRICITY
H01L2924/1579
ELECTRICITY
H01L23/60
ELECTRICITY
H01L2924/15738
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L23/49816
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L23/552
ELECTRICITY
H01L2224/08238
ELECTRICITY
H01L23/49833
ELECTRICITY
H01L2224/81192
ELECTRICITY
H01L2924/00
ELECTRICITY
International classification
H01L25/065
ELECTRICITY
H01L23/60
ELECTRICITY
H01L23/498
ELECTRICITY
Abstract
A interposer sandwich structure comprises a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes means for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.
Claims
1-14. (canceled)
15. A process for forming a cage structure to provide ESD, EMI and EMC shielding and protection of integrated circuit device in 3D packaging by forming said cage as a sandwich structure comprising interposers including top and bottom interposers around said integrated circuit device in which metallized shielding is incorporated into both said top and bottom interposers.
16. The process of claim 15 further providing TSV's for interconnection of said metallized shielding to ground or voltage as required electrically, and providing said bottom interposer in said sandwich connected by TSV's and solder connections to said chip carrier package, and said top interposer connecting peripherally by TSV's beyond the outline of said integrated circuit device to said bottom interposer to connect electrically to said chip carrier to provide said cage as a miniature localized cage around said device that preserves the scale of integration and miniaturization of said integrated circuit device.
17. The process of claim 15 further providing multiple integrated circuit devices comprising a miniaturized sandwich package structure in which multiple integrated circuit devices are placed adjacent to one another on the same interposer with TSV's in which one or more top interposers are provided to isolate ESD or EMI or EMC sensitive devices from one another in close proximity in said miniaturized sandwich package structure.
18. The process of claim 15 providing said interposer sandwich structure as a structure comprising two interposers enclosing said integrated circuit device that includes a solder bump size hierarchy with smaller solder bumps or other interconnection structure attaching said integrated circuit device to said bottom interposer, and larger solder bumps or other interconnection structure connecting said top interposer with said bottom interposer, or directly with said chip carrier, wherein said other interconnection structure comprises copper post bumps or equivalent metal post bumps.
19. The process of claim 18 further providing said metal post bumps to extend from either said top interposer or said bottom interposer toward a solder bump on the opposite interposer for connecting said top interposer and said bottom interposer by soldering.
20. The process of claim 19 further providing a structure whose height is substantially the same whether employing solder bumps or metal post bumps and the ratio of the heights of said larger bumps to said smaller bumps is about 3:1.
21. The process of claim 20 wherein the combined height of said bumps is about 50 um (microns),
22. The process of claim 15 of providing said top interposer with a blanket metal coating on said bottom or top surface and said connections to said bottom interposer or said chip carrier is selected from an electrical ground or bias.
23. The process of claim 15 further providing one or more devices connected to said bottom interposer are provided with shielding with a top interposer selectively to provide functional isolation for shielding or protection for maximum miniaturization.
24. The process of claim 15 further providing thermal interface material dispensed on the back of said integrated circuit device prior to joining said top interposer
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] The accompanying drawings are not necessarily drawn to scale but nonetheless set out the invention, and are included to illustrate various embodiments of the invention, and together with this specification also serve to explain the principles of the invention. These drawings comprise various Figures that illustrate ESD, EMI and EMC shielding and protection of integrated circuit devices in 3D packaging.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
[0022] To achieve the foregoing and other advantages, and in accordance with the purpose of this invention as embodied and broadly described herein, the following detailed description comprises disclosed examples of the invention that can be embodied in various forms.
[0023] The specific processes, compounds, compositions, and structural details set out herein not only comprise a basis for the claims and a basis for teaching one skilled in the art to employ the present invention in any novel and useful way, but also provide a description of how to make and use this invention. The written description, claims, abstract of the disclosure, and the drawings that follow set forth various features, objectives, and advantages of the invention and how they may be realized and obtained. These features, objectives, and advantages will also become apparent by practicing the invention.
[0024] As noted before, the interposer sandwich structure as shown in
[0025]
[0026] A first metal layer 120 is positioned on BEOL dielectric layer 132 and a second metal layer 122 on the bottom interposer 134. We also form a chip signal I/O interconnection 124 and a chip signal I/O interconnection 126 (substantially the same as 124) both positioned on the device as shown. A second metal layer 128 contacts the bottom interposer 134. A through-Si-Via interconnection 130 forms an electrical connection to chip carrier 138 through connector 135. We position BEOL dielectric layer 132 on bottom interposer 134 which is operatively associated with second level ground I/O interconnection 136 and Chip carrier 138.
[0027]
[0028] Interconnectors 112, 114, 212, and 214 as noted comprise solder (SnPb, SnAg, SnAgCu, or the art-known equivalents thereof) bumps or metal (Cu or Ni or the art-known equivalents thereof) posts capped with solder alloy. In those instances we employ shorter interconnectors between the chip and the lower interposer before assembly of upper interposer to the lower interposer with taller interconnectors. The shorter interconnectors are about one-third the height of the taller interconnects between the upper interposer and the lower interposer.
[0029] The interposers comprise a structure made of Si or other materials such as ceramics used in microcircuit technology (e.g., SiC) and the art-know equivalents thereof, or polymers, such as polyimides, phenolics or epoxies and the art-know equivalents thereof.
[0030] Throughout this specification, and abstract of the disclosure, the inventors have set out equivalents, of various materials as well as combinations of elements, materials, compounds, compositions, conditions, processes, structures and the like, and even though set out individually, also include combinations of these equivalents such as the two component, three component, or four component combinations, or more as well as combinations of such equivalent elements, materials, compositions conditions, processes, structures and the like in any ratios or in any manner.
[0031] Additionally, the various numerical ranges describing the invention as set forth throughout the specification also includes any combination of the lower ends of the ranges with the higher ends of the ranges, and any single numerical value, or any single numerical value that will reduce the scope of the lower limits of the range or the scope of the higher limits of the range, and also includes ranges falling within any of these ranges.
[0032] The terms “about,” “substantial,” or “substantially” as applied to any claim or any parameters herein, such as a numerical value, including values used to describe numerical ranges, means slight variations in the parameter or the meaning ordinarily ascribed to these terms by a person with ordinary skill in the art. In another embodiment, the terms “about,” “substantial,” or “substantially,” when employed to define numerical parameter include, e.g., a variation up to five per-cent, ten per-cent, or 15 per-cent, or somewhat higher.
[0033] The term “operatively associated” as used in this specification means at least two structures and/or materials or compounds or compositions connected to or aligned with one another to perform a function, such as electrical conductance, electrical shielding, electrical insulation, or heat shielding, or in some way to enhance the performance of one or the other or both.
[0034] All scientific journal articles and other articles, including internet sites, as well as issued and pending patents that this written description or applicants' Invention Disclosure Statements mention, including the references cited in such scientific journal articles and other articles, including internet sites, and such patents, are incorporated herein by reference in their entirety and for the purpose cited in this written description and for all other disclosures contained in such scientific journal articles and other articles, including internet sites as well as patents and the references cited therein, as all or any one may bear on or apply in whole or in part, not only to the foregoing written description, but also the following claims, and abstract of the disclosure.
[0035] Although the inventors have described their invention by reference to some embodiments, other embodiments defined by the doctrine of equivalents are intended to be included as falling within the broad scope and spirit of the foregoing written description, and the following claims, and abstract of the disclosure.