Method and apparatus for processing particulate material
09840775 ยท 2017-12-12
Assignee
Inventors
Cpc classification
C23C16/4412
CHEMISTRY; METALLURGY
C23C16/4417
CHEMISTRY; METALLURGY
C23C16/458
CHEMISTRY; METALLURGY
International classification
C23C16/00
CHEMISTRY; METALLURGY
C23C16/455
CHEMISTRY; METALLURGY
Abstract
An apparatus and method for arranging a precursor vapor flow through a vertical atomic layer deposition (ALD) cartridge along a top-to-bottom vertical channel in a central area of the cartridge, and for moving particulate material to be ALD processed in the cartridge upwards, upon rotation, by a threaded area substantially extending from the vertical channel to a side wall of the cartridge, and downwards along the vertical channel to cause the particulate material to cycle during ALD processing.
Claims
1. A method comprising: arranging a precursor vapor flow through a vertical atomic layer deposition (ALD) cartridge along a top-to-bottom vertical channel in a central area of the cartridge; and moving particulate material to be ALD processed in the cartridge upwards, upon rotation, by a threaded area substantially extending from the vertical channel to a side wall of the cartridge, and downwards along the vertical channel to cause the particulate material to cycle during ALD processing.
2. The method of claim 1, comprising: moving the particulate material upwards by a combined movement of rotation and shaking.
3. The method of claim 2, wherein the combined movement of rotation and shaking comprises consecutive movements consisting of lifting, rotating, and lowering.
4. The method of claim 1, wherein the rotating movement, or rotating and shaking movement, is transmitted to the cartridge along a gas exhaust line.
5. The method of claim 1, comprising: exposing the particulate material to temporally separated precursor pulses in the cartridge to deposit material on the surface of the particulate material by sequential self-saturating surface reactions.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The invention will now be described, by way of example only, with reference to the accompanying drawings, in which:
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DETAILED DESCRIPTION
(11) In the following description, Atomic Layer Deposition (ALD) technology is used as an example. The basics of an ALD growth mechanism are known to a skilled person. As mentioned in the introductory portion of this patent application, ALD is a special chemical deposition method based on the sequential introduction of at least two reactive precursor species to at least one substrate. The at least one substrate is exposed to temporally separated precursor pulses in the reaction chamber to deposit material on the substrate surfaces by sequential self-saturating surface reactions.
(12) A basic ALD deposition cycle consists of four sequential steps: pulse A, purge A, pulse B and purge B. Pulse A consists of a first precursor vapor and pulse B of another precursor vapor. Inactive gas and a vacuum pump are used for purging gaseous reaction by-products and the residual reactant molecules from the reaction space during purge A and purge B. A deposition sequence comprises at least one deposition cycle. Deposition cycles are repeated until the deposition sequence has produced a thin film or coating of desired thickness. Deposition cycles can also be more complex. For example, the cycles can include three or more reactant vapor pulses separated by purging steps. All these deposition cycles form a timed deposition sequence that is controlled by a logic unit or a microprocessor.
(13) In certain example embodiments as described in the following, thin conformal coatings are provided onto the surfaces of various particulate materials. The size of the particles depends on the particular material and the particular application. Suitable particle sizes typically range from the nanometer range up to the micrometer range, or even up to larger particles depending on the application. A wide variety of particulate materials can be used. The composition of a base particle and that of the coating is typically selected together so that the surface characteristics of the particle are modified in a way that is desirable for a particular application. The base particles preferably have some functional group on the surface that participates in an ALD reaction sequence that creates the coating.
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(15) The cartridge 100 comprises a side wall 101 defining a hollow space. In the hollow space the cartridge 100 comprises a vertical channel 102. The vertical channel 102 resides in a central area of the cartridge 100, and it extends vertically substantially throughout the cartridge 100.
(16) The vertical channel 102 is defined on its top side by a first particle filter 106. The first particle filter 106 may cover only the area of the vertical channel 102 (as drawn in
(17) In the hollow space, the cartridge 100 comprises a threaded area around the vertical channel 102 sideways. The threaded area extends from the edge of the vertical channel 102 to the cartridge side wall 101. The threaded area comprises one on more threads 103. In the drawing of
(18) The cartridge 100 comprises particulate material to be ALD processed. When the cartridge 100 is rotated, the particulate material moves upwards along the thread 103. The route of the particulate material is shown by the arrows in
(19) The vertical channel 102 is configured to allow top-to-bottom flow of precursor vapor through the cartridge 100. The first particle filter 106 allows precursor vapor and inactive gas to enter the vertical channel 102 but prevents the particulate material from travelling out of the cartridge 100. Similarly, the second particle filter allows reaction and inactive gases to exit the vertical channel 102 (and the cartridge 100) to an exhaust line (not shown in
(20) Additionally, the cartridge 100 may be shaken as illustrated by the arrow 311. In an example embodiment, the cartridge 100 is rapidly lifted and then rotated. This causes the particulate material to travel uphill along the thread 103. Subsequently, the cartridge 100 is lowered to its original position. The sequence of lifting, rotating and lowering is repeated for continuous uphill movement of the particulate material.
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(23) As shown in the preceding, a thread 103 may be in the form of a shelf. In alternative embodiments, the thread may be of another form, for example, in the form of a ridge. In certain example embodiments, such as in the example embodiment shown in
(24) Depending on whether the vertical channel 102 has an edge wall, the following alternatives can be identified: the thread 103 may be a curved protrusion protruding from the edge wall; the thread 103 may be a curved protrusion protruding from the side wall 101; and the thread 103 may be a curved shelf between the vertical channel 102 and cartridge side wall 101 attached to both the edge wall and the cartridge side wall 101. In the first and second alternative, in some embodiments, there can be a small interval between the curved protrusion and the side wall 101 or the edge wall (if any), respectively. The first and second alternative then make it possible to rotate (or rotate and shake) only part of the cartridge 100, instead of rotating (or rotating and shaking) the whole cartridge 100. Namely, in the first alternative, the cartridge side wall 101 can be stationary, while the interior of the cartridge rotates (or rotates and shakes). In the second alternative, the vertical channel edge wall can be stationary, while the threaded area and the cartridge side wall rotate.
(25) The thread 103 as shown in
(26) The lead of the thread 103 depends on the implementation. The threaded area may have more than one thread. Accordingly, the threaded area may be with one start or two starts, or more starts. A thread may slope towards the side wall 101 or towards the vertical channel 102, or it may be even (independently of the wall or support into which it is attached).
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(31) The cartridge 700 comprises a side wall 701 defining a hollow space. In the hollow space the cartridge 700 comprises a vertical channel 702. The vertical channel 702 resides in a central area of the cartridge 700, and it extends vertically substantially throughout the cartridge 700.
(32) The vertical channel 702 is defined on its top side by a first particle filter 706. On the bottom side the vertical channel 702 is defined by a second particle filter 707.
(33) In the hollow space, the cartridge 700 comprises a threaded area around the vertical channel 702 sideways. The threaded area extends from the edge of the vertical channel 702 to the cartridge side wall 701. The threaded area comprises one on more threads 703.
(34) The ALD reactor comprises a reaction chamber 720. The reaction chamber 720 is limited on its sides by a reaction chamber wall(s) 721. On its top side, the reaction chamber is closed by a reaction chamber lid 722. The reaction chamber is housed by a vacuum chamber 730. The vacuum chamber 730 is limited on its sides by a vacuum chamber wall(s) 731. On its top side, the vacuum chamber is closed by a vacuum chamber lid 732. The vacuum chamber lid 732 and the reaction chamber lid 722 may be integrated to form a dual-lid system. Furthermore, a heat reflector 737 may also be integrated to the lid system. The cartridge 700 can be loaded from the reactor top by opening the lid system.
(35) The vacuum chamber comprises, in addition to the heat reflector 737, other heat reflectors, such as the heat reflectors 736 on the sides of the reaction chamber 720. The heat reflectors form a thermos bottle structure. Within said structure in the vacuum chamber 730 is placed reaction chamber heaters 735. The reaction chamber heaters 735 heat the reaction chamber 720 and the cartridge 700 inside it as desired.
(36) The reaction chamber 730 is delimited on its bottom side by a reaction chamber flange 734. Electrical power to the reaction chamber heaters 735 is provided with conductors via feedthroughs through the flange 734. Precursor vapor and inactive gas in-feed lines 738 similarly travel through feedthroughs through the flange 734 into the vacuum chamber 730. Therefrom, the in-feed lines 738 travel via the reaction chamber lid 722 into the reaction chamber 720 providing the cartridge 700 with precursor vapor and inactive gas in-feed from the top side of the cartridge 700.
(37) Below the reaction chamber 720, the ALD reactor comprises an exhaust line 740 which conducts reaction and inactive gases towards a vacuum pump (not shown). For that purpose, the reaction chamber (bottom) flange 734 has an exhaust line feedthrough. The exhaust line 740 branches below the reaction chamber 720 (the exhaust line 740 may form a T-junction, or similar). One branch (to the side in
(38) The cartridge 700 comprises particulate material to be ALD processed. During ALD processing, when the cartridge 700 is rotated as illustrated by the round arrow 710, a particulate material cycle similar to that shown in
(39) The vertical channel 702 allows top-to-bottom flow of precursor vapor through the cartridge 700. The first particle filter 706 allows precursor vapor and inactive gas to enter the vertical channel 702 from a top part of the reaction chamber 720 but prevents the particulate material from travelling out of the cartridge 700. Similarly, the second particle filter allows reaction and inactive gases to exit the vertical channel 702 (and the cartridge 700) to the bottom part of the reaction chamber 720 and therefrom to the exhaust line 740 but prevents the particulate material from travelling to the outside of the cartridge 700.
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(41) Without limiting the scope and interpretation of the patent claims, certain technical effects of one or more of the example embodiments disclosed herein are listed in the following: A technical effect is hindering the formation of agglomerates. Another technical effect is transmitting rotating movement, or rotating and shaking movement, to an ALD cartridge along a gas exhaust line.
(42) The foregoing description has provided by way of non-limiting examples of particular implementations and embodiments of the invention a full and informative description of the best mode presently contemplated by the inventors for carrying out the invention. It is however clear to a person skilled in the art that the invention is not restricted to details of the embodiments presented above, but that it can be implemented in other embodiments using equivalent means without deviating from the characteristics of the invention.
(43) Furthermore, some of the features of the above-disclosed embodiments of this invention may be used to advantage without the corresponding use of other features. As such, the foregoing description should be considered as merely illustrative of the principles of the present invention, and not in limitation thereof. Hence, the scope of the invention is only restricted by the appended patent claims.