IMAGE SENSOR OF GLOBAL SHUTTER TYPE

Abstract

Each pixel of a global shutter back-side illuminated image sensor includes a photosensitive area. On a front surface, a first transistor includes a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a memory area. The memory area penetrates into the photosensitive area less deeply than the insulated vertical ring-shaped electrode. A read area is formed in an intermediate area which is formed in the memory area. The memory area, the intermediate area and read area define a second transistor having an insulated horizontal electrode forming a gate of the second transistor. The memory area may be formed by a first and second memory areas and an output signal is generated indicative of a difference between charge stored in the first memory area and charge stored in the second memory area after a charge transfer to the first memory area.

Claims

1. A back-side illuminated image sensor of global shutter type, wherein each pixel of the image sensor comprises: a photosensitive area of a first conductivity type; on a front surface side, a first transistor comprising a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a memory area of the first conductivity type which penetrates into the photosensitive area less deeply than the insulated vertical ring-shaped electrode; and a read area of the first conductivity type formed in an intermediate area of a second conductivity type which is formed in the memory area, wherein the memory area, the intermediate area and the read area form an assembly defining a second transistor having an insulated horizontal electrode forming a gate of said second transistor.

2. The sensor of claim 1, wherein, for each pixel, the photosensitive area has a first doping level, the memory area has a second doping level greater than the first doping level, and the read area has a third doping level greater than the second doping level.

3. The sensor of claim 1, wherein each pixel further includes a transfer area laterally delimited by the insulated vertical ring-shaped electrode, the transfer area extending from the photosensitive area to the memory area.

4. The sensor of claim 3, wherein the transfer area of each pixel is of the first conductivity type.

5. The sensor of claim 2, wherein each pixel further includes a transfer area laterally delimited by the insulated vertical ring-shaped electrode, the transfer area extending from the photosensitive area to the memory area, and wherein the transfer area of each pixel has the first doping level.

6. The sensor of claim 1, wherein each pixel further includes a well of the second conductivity type penetrating into the photosensitive area from the front side less deeply than the insulated vertical ring-shaped electrode.

7. The sensor of claim 1, wherein each pixel is laterally delimited by an insulated conductive wall.

8. The sensor of claim 7, wherein the insulated conductive wall extends from the front side to the back side.

9. The sensor of claim 1, wherein the insulated vertical ring-shaped electrode is configured to receive a first voltage to control a charge transfer from the photosensitive area to the memory area, and wherein the insulated horizontal electrode is configured to receive a second voltage to control a charge transfer from the memory area to the read area.

10. The sensor of claim 9, wherein each pixel is laterally delimited by an insulated conductive wall, and wherein the insulated conductive wall is configured to be biased by a bias voltage.

11. The sensor of claim 1, wherein the memory area comprises a first memory area and a second memory area, and further comprising: a circuit configured, for each pixel, to supply an output signal indicative of a difference between charge stored in the first memory area and charge stored in the second memory area after a charge transfer from the photosensitive are to the first memory area.

12. The sensor of claim 11, wherein each pixel comprises a second insulated electrode configured to keep permanently blocked a charge transfer from the photosensitive area to the second memory area.

13. The sensor of claim 11, wherein each pixel comprises: a third insulated electrode configured to control a charge transfer from the first memory area to a pixel sense node, and a fourth insulated electrode configured to control a charge transfer from the second memory area to the pixel sense node.

14. The sensor of claim 13, comprising a read circuit connected to the pixel sense node, the read circuit configured to read a first potential after a charge transfer from the first memory area to the pixel sense node and to read a second potential after a charge transfer from the second memory area to the pixel sense node.

15. The sensor of claim 14, wherein the circuit determines the output signal from the first potential and from the second potential.

16. The sensor of claim 11, wherein each insulated electrode is configured to receive a control signals.

17. A back-side illuminated image sensor of global shutter type, wherein each pixel of the image sensor comprises: a photosensitive area of a first conductivity type; on a front surface side, a first transistor comprising a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a first memory area of the first conductivity type which penetrates into the photosensitive area less deeply than the insulated vertical ring-shaped electrode; a first read area of the first conductivity type formed in an intermediate area of a second conductivity type which is formed in the first memory area; on the front surface side, a second transistor comprising a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a second memory area of the first conductivity type which penetrates into the photosensitive area less deeply than the insulated vertical ring-shaped electrode; and a second read area of the first conductivity type formed in an intermediate area of the second conductivity type which is formed in the second memory area.

18. The sensor of claim 17, further comprising: a first insulated horizontal electrode forming a first gate for controlling transfer of charge from the first memory area to the first read area; and a second insulated horizontal electrode forming a second gate for controlling transfer of charge from the second memory area to the second read area.

19. The sensor of claim 17, further comprising: a circuit configured, for each pixel, to supply an output signal characteristic of a difference between charge stored in the first memory area and charge stored in the second memory area after a charge transfer from photosensitive area to the first memory area.

20. The sensor of claim 17, wherein each pixel comprises an insulated electrode configured to keep permanently blocked a charge transfer from the photosensitive area to the second memory area.

21. An image sensor, comprising: a plurality of pixels, each comprising a photosensitive area, a first memory area, a second memory area and a first insulated electrode configured to control a charge transfer from the photosensitive area to the first memory area; and a circuit configured, for each pixel, to supply an output signal indicative of a difference between charge stored in the first memory area and charge stored in the second memory area after said charge transfer from the photosensitive area to the first memory area.

22. The sensor of claim 21, wherein each pixel comprises a second insulated electrode configured to keep permanently blocked a charge transfer from the photosensitive area to the second memory area.

23. The sensor of claim 21, wherein each pixel comprises: a third insulated electrode configured to control a charge transfer from the first memory area to a pixel sense node, and a fourth insulated electrode configured to control a charge transfer from the second memory area to the pixel sense node.

24. The sensor of claim 23, comprising a read circuit connected to the pixel sense node, the read circuit configured to read a first potential after a charge transfer from the first memory area to the pixel sense node and to read a second potential after a charge transfer from the second memory area to the pixel sense node.

25. The sensor of claim 24, wherein the circuit determines the output signal from the first potential and from the second potential.

26. The sensor of claim 21, wherein each insulated electrode is configured to receive a control signals.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The foregoing and other features and advantages will be discussed in detail in the following non-limiting description of dedicated embodiments in connection with the accompanying drawings, wherein:

[0034] FIG. 1, previously described, illustrates an example of a pixel circuit adapted to a control of rolling shutter type,

[0035] FIG. 2, previously described, illustrates an example of a pixel circuit adapted to a control of global shutter type,

[0036] FIG. 3, previously described, is a cross-section view of an example of a back-side illuminated pixel adapted to a control of rolling shutter type,

[0037] FIGS. 4A, 4B, and 4C schematically show an embodiment of a back-side illuminated pixel adapted to a control of global shutter type,

[0038] FIG. 5 is a timing diagram illustrating an embodiment of the pixel of FIGS. 4A to 4C,

[0039] FIGS. 6A, 6B, and 6C schematically show an embodiment of a back-side illuminated pixel adapted to a global shutter control and comprising means for correcting the pixel output signal, and

[0040] FIG. 7 is a timing diagram illustrating an embodiment of the pixel of FIGS. 6A to 6C.

DETAILED DESCRIPTION

[0041] The same elements have been designated with the same reference numerals in the various drawings and, further, the various drawings are not to scale. For clarity, only those steps and elements which are useful to the understanding of the described embodiments have been shown and are detailed.

[0042] In the following description, terms “upper”, “lower”, “vertical”, “horizontal”, etc., refer to the orientation of the concerned elements in the corresponding drawings, it being understood that, in practice, the pixels shown in the different drawings may be oriented differently. Unless otherwise specified, term “substantially” and expression “in the order of” mean to within 10%, preferably to within 5%, and a first element “resting on” or “coating” a second element means that the first and second elements are in contact with each other.

[0043] FIGS. 4A to 4C schematically show an embodiment of a pixel of a sensor of global shutter type capable of receiving an illumination on its back side. FIG. 4A is a top view of the pixel and FIGS. 4B and 4C are cross-section views along respective planes BB and CC of FIG. 4A.

[0044] The pixel comprises the same elements as the pixel of FIG. 3, with the difference that the charge collection area, here designated with reference numeral 31, is not directly connected to sense node S, and that a transistor T2 such as described in relation with FIG. 2 is formed in area 31.

[0045] More particularly, as better shown in FIG. 4C, transistor T2 comprises a P-type doped intermediate area 33 formed in charge collection area 31 and penetrating into area 31 across a portion only of the thickness thereof, and a heavily N-type doped read area 35 (N.sup.+) formed in intermediate P area 33. A horizontal electrode 37 insulated from substrate 11 by an insulator 39 forms the gate of transistor T2. Gate 37 rests on intermediate P area 33 and may extend over all or part of memory area 31. Gate 37 is connected to terminal TG2, and read area 35 is connected to sense node S. In this embodiment, read area 35 is arranged against an edge of insulated electrode 16 and gate 37 has an edge aligned with read area 35.

[0046] Charge collection area 31 forms a memory area. Memory area 31 is N-type doped, with a doping level N.sub.1 greater than doping level N.sup.− of photosensitive area 11. Memory area 31 is shallower than electrode 16. In top view, memory area 31 may have an elongated shape, for example, the shape of a rectangle which is five times longer than it is wide.

[0047] Photosensitive area 11, transfer transistor T1, memory area 13, transfer transistor T2, and node S are connected to one another in a circuit such as described in relation with FIG. 2, memory area 31 corresponding to memory cell 1.

[0048] It should be noted that transistor T2 is arranged at an available location of charge collection area 31. Adding this transistor thus causes no surface area increase with respect to the pixel of FIG. 3.

[0049] FIG. 5 shows a timing diagram of voltage V.sub.S at the level of node S and of control signals V.sub.TG1, V.sub.TG2, V.sub.RD, and V.sub.RST, respectively applied to terminal TG1, to terminal TG2, to the gate of transistor RD, and to the gate of transistor RST. Signals V.sub.TG1, V.sub.TG2, V.sub.RD and V.sub.RST vary between high and low levels which may be different for each of the signals. The different control signals may be supplied by one or a plurality of sensor control circuits.

[0050] In operation, P.sup.+ well 13 is biased to a low reference voltage, for example, to ground voltage GND. A bias signal lower than the low reference voltage, for example, −1 V, is applied to terminal Vwall, which causes an accumulation of holes along insulated conductive wall 24. A potential well then forms in photosensitive area 11.

[0051] Before a time t0, during an integration phase, the pixel receives an illumination on its back side and photogenerated electrons are trapped by the potential well of photosensitive area 11 where they accumulate. During the integration phase, transistor RD is kept in the off state. Transistor RST is kept in the on state. Transistor T1 is kept in the off state, so that transfer area 17 is fully electron-depleted. As a result, a potential barrier creates in area 17, between photosensitive area 11 and memory area 31, thus inhibiting the flowing of the photogenerated electrons accumulated in photosensitive area 11 to memory area 31. Further, a potential well forms in memory area 31. Transistor t2 is kept in the off state by keeping control signal V.sub.TG2 at a negative voltage, for example, −0.8 V.

[0052] At time t0, at the beginning of a pixel read phase, in each sensor pixel, the photogenerated electrons are transferred from photosensitive area 11 into memory area 31. To achieve this, transistor T1 is set to the on state. The depletion of transfer area 17 stops and, further, the potential well in memory area 31 becomes deeper than that of photosensitive area 11, which causes the transfer of the photogenerated electrons to memory area 31.

[0053] At a time t1, the operation of transfer of the photogenerated electrons to memory area 31 is over and transistor T1 is set back to the off state.

[0054] A new integration phase common to all the sensor pixels can then start while the read phase carries on. The resetting and the restarting of the photodiode integration phase may be controlled by conventional means, which are not described herein. Similarly, an anti-dazzle system which may be a specific implementation of the integration reset and starting system is preferably provided.

[0055] At a time t2, each pixel of a same row is selected. To achieve this, transistor RD of the pixel read circuit is set to the on state.

[0056] At a time t3, transistor RST is set to the off state. Voltage V.sub.S settles at a level V0 which may be lower than power supply voltage Vdd due to a coupling with transistor RST. Voltage level V0 is read by the read circuit and is stored by a processing circuit connected to terminal P of the read circuit.

[0057] At a time t4, the photogenerated electrons stored in memory area 31 are transferred into read area 35. To achieve this, transistor T2 is set to the on state. Voltage V.sub.S then decreases to a level V1.

[0058] At a time t5, the operation of transfer of the photogenerated electrons to read area 35 is over and transistor T2 is set back to the off state. Voltage level V1 is then read by the read circuit and stored by the processing circuit. Voltage level V0 may be subtracted from voltage level V1 to do away with the thermal noise essentially resulting from a coupling with transistor RST. The difference between voltage levels V1 and V0 is representative of the quantity of photogenerated charges in photosensitive area 11 before time t0 and forms the pixel output signal.

[0059] At a time t6, transistor RST is set back to the on state and, at a time t7 subsequent to time t5, the pixel is deselected by setting transistor RD back to the off state. The pixel read phase is over, and more generally the read phase is over for all the pixels in the row. The steps carried out between times t2 and t6 are then successively repeated for each of the other rows of pixels of the array until all the sensor pixels have been read.

[0060] As previously indicated, the pixel of FIGS. 4A to 4C is adapted to a control of global shutter type, is capable of receiving a back-side illumination, and keeps the advantage of small dimensions of the pixel of FIG. 3. However, in the pixels of FIGS. 4A to 4C, as in other pixels of global shutter type, light rays received by the pixel may reach memory area 31 and parasitic charges may be photogenerated therein. As a result, the output signal of the pixel may be altered.

[0061] FIGS. 6A to 6C illustrate an embodiment of a pixel, FIG. 6A being a top view of the pixel, FIGS. 6B and 6C being cross-section views along respective planes BB and CC of FIG. 6A.

[0062] This pixel comprises the same elements as the pixel of FIGS. 4A to 4C and further comprises a duplication of all the elements forming transistors T1 and T2 (see FIG. 4C) into elements forming transistors T3 and T4, respectively. Thus, FIGS. 6A to 6C show the elements designated with reference numerals 15, 16, 17, 31, 33, 35, 37, and 39 and duplicated elements of same configuration respectively designated with these reference numerals preceded by digit 1. Further, insulated vertical electrode 116 of transistor T3 is connected to a terminal TG3, gate 157 of transistor T4 is connected to a terminal TG4, and read areas 35 and 135 are connected together to node S.

[0063] In this embodiment, due to the fact that memory areas 31 and 131 have the same dimensions in bottom view, they are exposed to the same quantity of light radiation and the number of parasitic charges photogenerated in one or the other of memory areas 31 and 131 is substantially identical.

[0064] FIG. 7 shows a timing diagram of voltage V.sub.S and of control signals V.sub.TG1, V.sub.TG2, V.sub.RD, V.sub.RST, V.sub.TG3 and V.sub.TG4, signals V.sub.TG3 and V.sub.TG4 being applied to terminals TG3 and TG4, respectively. Like signals V.sub.TG1, V.sub.TG2, V.sub.RD and V.sub.RST, signals V.sub.TG3 and V.sub.TG4 vary between high and low levels which may be different for each of the signals, and may be supplied by one or a plurality of sensor control circuits.

[0065] In operation, the biasing of P.sup.+ well 39 and of insulated conductive wall 24 is the same as that described in relation with FIG. 5 and a potential well forms in photosensitive area 11. Further, transistor T3 is permanently kept in the off state, so that transfer region 117 is fully electron-depleted, thus inhibiting charge exchanges between these areas.

[0066] Before a time t10, during an integration phase, control signals V.sub.RD, V.sub.RST, V.sub.TG1, and V.sub.TG2 are at the same voltages as before time t0 of the integration phase described in relation with FIG. 5. Further, transistor T4 is in the off state, control signal V.sub.TG4 being at a negative voltage, for example, −0.8 V. The pixel receives an illumination on its back side and photogenerated electrons accumulate in photosensitive area 11.

[0067] At time t10, at the beginning of a pixel read phase, during a transfer operation, the photogenerated electrons are transferred from photosensitive area 11 to memory area 31 as described in relation with FIG. 5.

[0068] At a time t11, transistor T1 is set to the off state and a new integration phase may start while the read phase carries on.

[0069] At a time t12, transistor RD is set to the on state to select the pixel.

[0070] At a time t13, reset transistor RST is set to the off state. Voltage V.sub.S settles at a level V10 which may be lower than power supply voltage Vdd due to the thermal noise. Voltage level V10 is then read by the read circuit and is stored by the processing circuit.

[0071] At a time t14, the parasitic charges photogenerated in memory area 131 are transferred into read area 135. To achieve this, transistor T4 is set to the on state. Voltage V.sub.S then drops to a level V11.

[0072] At a time t15, the operation of charge transfer to read area 135 is over and transistor T4 is set back to the off state. Voltage level V11 is then read by the read circuit and stored by the processing circuit. Voltage level V11 is representative of the quantity of parasitic charges photogenerated in memory area 131 before time t14.

[0073] Between successive times t16 and t17, the photogenerated electrons stored in memory area 31 are transferred to read area 35 as described in relation with FIG. 5. Voltage V.sub.S then drops to a level V12. Voltage level V12 is representative not only of the quantity of charges photogenerated in photosensitive area 11 before time t10, but also of the quantity of parasitic charges photogenerated in memory area 31 (and thus in memory area 131) before time t16. Voltage level V12 is then read by the read circuit and is stored by the processing circuit.

[0074] At a time t18, transistor RST is set to the on state and, at a time t19, the pixel is deselected by setting transistor RD to the off state. The pixel read phase is then over.

[0075] Voltage levels V10, V11, and V12 are then used by the processing circuit of the sensor to determine an output signal of the pixel.

[0076] A first step of the method comprises calculating a voltage V.sub.PAR representative of the quantity of parasitic charges photogenerated in memory area 131 by doing away with the thermal noise at the level of node S. To achieve this, voltage level V10 is subtracted to voltage level V11:

V.sub.PAR=V11−V10  (1)

[0077] A second step of the method comprises calculating an output signal V.sub.PIX of the pixel representative of the quantity of charges photogenerated in photosensitive area 11, before time t10, by suppressing the influence of the parasitic charges photogenerated in memory area 31, and the influence of the thermal noise at the level of node S. To achieve this, a voltage V.sub.MEM representative of the quantity of charges transferred from photosensitive area 11 to memory area 31 may be calculated according to the following equation (2):

V.sub.MEM=V12−V11  (2)

[0078] The influence of the noise on voltage V.sub.MEM is suppressed due to the fact that voltage levels V12 and V11 are influenced by the same thermal noise. Voltage V.sub.PIX is then calculated from voltage V.sub.MEM and from voltage V.sub.PAR:

V.sub.PIX=V.sub.MEM−V.sub.PAR=V12−2*V11+V10  (3)

[0079] In an alternative embodiment, memory area 31 has a surface area equal to a times the surface area of memory area 131. Memory area 31 then receives a quantity of light equal to a times the quantity of light received by memory area 131, and the number of parasitic charges photogenerated in second memory area 31 is equal to a times the number of parasitic charges photogenerated in second memory area 131. In this case, during the second step of the above-described method, term a should be taken into account according to the following equation (3′):

V.sub.PIX=V.sub.MEM−α*V.sub.PAR

V.sub.PIX=V12−(1+α)*V11+α*V10  (3)

[0080] It should be noted that voltage V.sub.PIX may be directly calculated from voltage levels V10, V11, and V12, and from above equation (3) or (3′).

[0081] Advantageously, in output signal V.sub.PIX, the influence of the thermal noise and of the parasitic charges photogenerated in memory area 31 has been suppressed.

[0082] Further, due to the fact that memory area 131 and transistors T3 and T4 are respectively identical or similar to memory area 31 and to transistors T1 and T2, they may be formed simultaneously. Thus, the method of manufacturing a pixel of the type in FIGS. 6A to 6C requires no additional stage with respect to that of a pixel of the type in FIGS. 4A to 4C.

[0083] In alternative embodiments, the order of the steps described in relation with FIG. 7 may be modified. For example, during a read phase, the charge transfer from memory area 31 to read area 35 may be performed before the charge transfer from memory area 131 to read area 135, and/or an additional step during which transistor RST is set to the on state and then to the off state may be provided between the charge transfer to read area 35 and the charge transfer to read area 135.

[0084] Whatever the number and the order of the steps implemented during a phase of reading a pixel of the type in FIGS. 6A to 6C, it will be within the abilities of those skilled in the art to calculate a corrected output signal V.sub.PIX based on the voltage levels V.sub.S measured after each charge transfer from a memory area to a corresponding read area, and possibly based on the voltage levels V.sub.S measured after transistor RST has been set to the off state.

[0085] Correction means similar to those provided in the pixel of FIGS. 6A to 6C may be provided, other pixels comprising a memory area connected by a first transistor to a photosensitive area and by a second transistor to a read area. The correction means then correspond to a duplication of the intermediate memory area, of the first and second transistors, and possibly of the read area, which may be common to the two memory areas. For example, such correction means may be implemented in a pixel of global shutter type which is capable of receiving a front side illumination.

[0086] As an example, the various elements of the previously-described pixels have the following dimensions: [0087] sides having a length in the range from 1 to 3 μm, for example, 1.6 μm, for pixels having a square surface in top view; [0088] small sides having a length in the range from 0.1 to 0.5 μm, for example, 0.2 μm, and large sides having a length in the range from 0.5 to 2.5 μm, for example, 0.8 μm, for memory areas having rectangular surfaces in top view; [0089] a thickness in the range from 3 to 15 μm, for example, 10 μm for substrate 11; [0090] a width in the order of 0.2 μm and a depth in the range from 1.5 to 3 μm, for example, 2 μm, for electrodes 16 and 116; [0091] a width in the order of 0.4 μm for insulated conductive wall 24; [0092] a depth substantially equal to that of electrodes 16 and 116 for P.sup.+ well 13; [0093] a depth equal to that of P.sup.+ well 13 minus approximately 0.5 μm for memory areas 31 and 131; [0094] an approximate 0.5-μm thickness for transfer areas 17 and 117; [0095] a depth in the order of 0.5 μm for intermediate P areas 33 and 133; and [0096] a depth in the order of 0.2 μm for read areas 35 and 135.

[0097] As an example, the layers, wells, and areas of the pixels have the following doping levels: [0098] in the range from 10.sup.14 to 10.sup.16 at.cm.sup.−3 for the N.sup.− doping level; [0099] in the range from 5.10.sup.16 to 5.10.sup.17 at.cm.sup.−3 for doping level N.sub.1; [0100] in the range from 10.sup.18 to 10.sup.20 at.cm.sup.−3 for the heavily-doped N-type areas (N.sup.+); [0101] in the range from 10.sup.18 to 10.sup.19 at.cm.sup.−3 for the heavily-doped P-type layers and wells (P.sup.+).

[0102] Specific embodiments have been shown and described. Various alterations, modifications, and improvements will occur to those skilled in the art. In particular, although embodiments where the photogenerated charges used to determine the output signal of the pixel are electrons have been described, these embodiments may be adapted to the case where the charges are holes by inverting all the conductivity types of the different areas, layers and wells, and by adapting the voltages and the bias and control signals.

[0103] The previously-described pixels may be associated with other pixel read circuits than those described in relation with FIGS. 1 and 2.

[0104] The memory areas may have an increasing doping level from the corresponding transfer area to the upper surface of the substrate to improve charge transfers from the memory areas to the corresponding read areas.

[0105] Transfer areas 17 and 117 may be doped with the same conductivity type as the memory and photosensitive areas, as previously described, but at an intermediate doping level. These areas may be doped with the conductivity type opposite to that of the memory and photosensitive areas.

[0106] The previously-indicated shapes, dimensions, and materials may be modified. For example, in top view, the pixels may have other shapes than a square, for example, a rectangle or a hexagon. Although an insulated conductive wall 24 crossing substrate 11 has been shown, wall 24 may penetrate into the substrate all the way to layer 19 without reaching the lower surface of substrate 11. Insulated conductive wall 24 may be replaced with a P-type doped semiconductor wall or with an insulating wall coated with a P-type doped layer.

[0107] The calculation of an output signal of the pixel and/or the storage of the voltage levels of node V.sub.S may be performed by processing software rather than by a hardware processing circuit.

[0108] Various embodiments with different variations have been described hereabove. It should be noted that those skilled in the art may combine various elements of these various embodiments and variations without showing any inventive step.

[0109] Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the spirit and the scope of the present invention. Accordingly, the foregoing description is by way of example only and is not intended to be limiting. The present invention is limited only as defined in the following claims and the equivalents thereto.