VANADIUM DIOXIDE

Abstract

The present application provides vanadium dioxide doped with Ti, or vanadium dioxide further doped with other atoms selected from the group of W, Ta, Mo, and Nb. The vanadium dioxide of the present application is excellent in moisture resistance and in which deterioration of endothermic characteristics due to moisture is suppressed.

Claims

1. Vanadium dioxide doped with Ti, or vanadium dioxide further doped with other atoms selected from the group consisting of W, Ta, Mo, and Nb, wherein: when the other atoms are W, the content of the other atoms in parts by mole is more than 0 part by mole and 5 parts by mole or less, with respect to 100 parts by mole in total of vanadium, Ti and the other atoms, when the other atoms are Ta, Mo, or Nb, the content of the other atoms in parts by mole is more than 0 part by mole and 15 parts by mole or less, with respect to 100 parts by mole in total of vanadium, Ti and the other atoms, and the content of titanium in parts by mole is 2 parts by mole or more and 30 parts by mole or less, with respect to 100 parts by mole in total of vanadium, Ti and the other atoms.

2. The vanadium dioxide according to claim 1, wherein the content of titanium in parts by mole is 5 parts by mole or more and 10 parts by mole or less, with respect to 100 parts by mole in total of vanadium, Ti and the other atoms.

3. Vanadium dioxide having the formula:
V.sub.1-x-yTi.sub.xM.sub.yO.sub.2 wherein, M is W, Ta, Mo, or Nb, x is 0.02 or more and 0.3 or less, y is 0 or more and 0.05 or less when M is W, and y is 0 or more and 0.15 or less when M is Ta, Mo, or Nb.

4. The vanadium dioxide according to claim 3, wherein x is 0.05 or more and 0.1 or less.

5. A ceramic material comprising the vanadium dioxide according to claim 1.

6. The ceramic material according to claim 5, wherein the content of the vanadium dioxide is 96 mass % or more.

7. A cooling device comprising the vanadium dioxide according to claim 1.

8. An electronic component comprising the cooling device according to claim 7.

9. An electronic device comprising the cooling device according to claim 7.

10. A cooling device comprising the ceramic material according to claim 5.

11. An electronic device comprising the electronic component according to claim 8.

12. A ceramic material comprising the vanadium dioxide according to claim 2.

13. A ceramic material comprising the vanadium dioxide according to claim 3.

14. A ceramic material comprising the vanadium dioxide according to claim 4.

15. The ceramic material according to claim 12, wherein the content of the vanadium dioxide is 96 mass % or more.

16. The ceramic material according to claim 13, wherein the content of the vanadium dioxide is 96 mass % or more.

17. The ceramic material according to claim 14, wherein the content of the vanadium dioxide is 96 mass % or more.

18. A cooling device comprising the vanadium dioxide according to claim 2.

19. A cooling device comprising the vanadium dioxide according to claim 3.

20. A cooling device comprising the vanadium dioxide according to claim 4.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0025] FIG. 1 shows the DSC measurement result for Sample No. 2 before the moisture resistance test.

[0026] FIG. 2 shows the DSC measurement results for Sample No. 2 in the moisture resistance test.

[0027] FIG. 3 shows the result of scanning electron microscope observation of Sample No. 2 before the moisture resistance test.

[0028] FIG. 4 shows the result of scanning electron microscope observation of Sample No. 2 after the moisture resistance test.

[0029] FIG. 5 shows the result of scanning electron microscope observation of Sample No. 10 before the moisture resistance test.

[0030] FIG. 6 shows the result of scanning electron microscope observation of Sample No. 10 after the moisture resistance test.

DETAILED DESCRIPTION

[0031] The vanadium dioxide doped with Ti and vanadium dioxide further doped with other atoms of the present disclosure (hereinafter also collectively referred to as “the vanadium dioxide of the present disclosure”) absorbs heat for latent heat. The vanadium dioxide of the present disclosure temporarily absorbs excess heat for latent heat, thereby achieving the temporal leveling of heat by releasing the heat absorbed when the temperature decreases, and thus making it possible to obtain a great cooling effect.

[0032] The vanadium dioxide of the present disclosure is usually used as a ceramic material containing the vanadium dioxide as a main component.

[0033] The “main component” means a component contained in the ceramic material, in an amount of 60 mass % or more, particularly 80 mass % or more, preferably 90 mass % or more, more preferably 95 mass % or more, still more preferably 98 mass % or more, for example, 98.0 mass % or more and 99.8 mass % or less or substantially 100%.

[0034] In the present disclosure, the “vanadium dioxide doped with Ti” represents vanadium oxide showing a corresponding crystal structure by X-ray structural analysis (typically using powder X-ray diffraction method). In the present specification, the “vanadium dioxide further doped with other atoms” represents vanadium dioxide doped with other atoms in addition to Ti, and vanadium oxide showing a corresponding crystal structure by X-ray structural analysis.

[0035] The vanadium dioxide of the present disclosure may contain impurities other than the vanadium dioxide doped with Ti or the vanadium dioxide further doped with other atoms. Examples of the impurities are not particularly limited, but include vanadium oxides other than those mentioned above, for example, undoped VO.sub.2, V.sub.2O.sub.3, V.sub.2O.sub.3 and the like, and other ceramic materials, for example, glass, as well as Na, Al, Cr, Fe, Ni, Mo, Sb, Ca, Si and oxides thereof.

[0036] The amount of the impurities can be as small as possible, for example, 5 mass % or less, preferably 3 mass % or less, more preferably 1 mass % or less, further preferably 0.5 mass % or less, still more preferably 0.2 mass % or less, and most preferably substantially 0 mass % (that is, it contains substantially no impurities).

[0037] The content of Ti doped in the vanadium dioxide of the present disclosure is 2 parts by mole or more and 30 parts by mole or less, and preferably 5 parts by mole or more and 10 parts by mole or less, with respect to 100 parts by mole in total of vanadium, Ti, and the other atoms. Titanium atoms in such a range are doped in vanadium dioxide, whereby the moisture resistance of vanadium dioxide is greatly improved.

[0038] The other atoms are not particularly limited as long as they can be contained in the vanadium oxide as doping elements, but can be W, Ta, Mo and Nb, and more preferably W. It is noted that the other atoms are not necessarily essential components in the vanadium dioxide of the present disclosure and may not be contained. In this case, the vanadium dioxide of the present disclosure is “the vanadium dioxide doped with Ti”.

[0039] When the other atoms are W, the content of other atoms in parts by mole can be more than 0 part by mole and 5 parts by mole or less, with respect to 100 parts by mole in total of vanadium, Ti, and the other atoms.

[0040] When the other atoms are Ta, Mo, or Nb, the content of other atoms in parts by mole can be more than 0 part by mole and 15 parts by mole or less, with respect to 100 parts by mole in total of vanadium, Ti, and the other atoms.

[0041] In one aspect, the vanadium dioxide of the present disclosure can be vanadium dioxide of a formula:

V.sub.1-x-yTi.sub.xM.sub.yO.sub.2

wherein, M is W, Ta, Mo, or Nb,

[0042] x is 0.02 or more and 0.3 or less,

[0043] y is 0 or more,

[0044] and y is 0.05 or less when M is W, and

[0045] y is 0.15 or less when M is Ta, Mo, or Nb.

[0046] Herein, M corresponds to “other atoms”, and is not necessarily an essential component, and the content of M in parts by mole may be 0. In this case, the compound of the above formula becomes vanadium dioxide doped only with titanium.

[0047] In an embodiment, x is 0.05 or more and 0.1 or less. By setting x to such a range, the moisture resistance of the vanadium dioxide of the present disclosure can be further improved.

[0048] In one embodiment, the vanadium dioxide of the present disclosure is a compound of the above formula wherein x is 0, that is, vanadium dioxide doped only with Ti.

[0049] In another embodiment, the vanadium dioxide of the present disclosure is a compound wherein y is more than 0 and M is W, that is, titanium and tungsten doped vanadium dioxide.

[0050] The temperature at which the vanadium dioxide of the present disclosure undergoes a phase transition is selected appropriately depending on the object to be cooled, the purpose of cooling, or the like, and for example, when the object to be cooled is a CPU, the vanadium oxide can undergo the phase transition at 20 to 100° C., and preferably 40 to 60° C. during temperature rising. The temperature at which the vanadium dioxide of the present disclosure undergoes a phase transition, that is, the temperature indicating the latent heat of the vanadium dioxide of the present disclosure, can be adjusted by adding (doping) other atoms, and adjusting the additive amount of the atoms.

[0051] The vanadium dioxide of the present disclosure has an initial latent heat amount of 35 J/g or more, more preferably 40 J/g or more, and further preferably 43 J/g or more. Also, the vanadium dioxide of the present disclosure has a latent heat amount of 30 J/g or more, more preferably 35 J/g or more, and further preferably 40 J/g or more, even after the moisture resistance test (storage at 85° C. and relative humidity of 85% for 500 hours). Even when exposed to moisture as described above, by having a high latent heat amount, it is not necessary to take measures against moisture when making it into a device, and the like, which is advantageous in cost, shape and the like. Further, by having a larger latent heat amount, a great cooling effect can be exhibited with a smaller volume, which is advantageous in terms of miniaturization. The “latent heat” herein represents the total amount of heat energy required when the phase of a substance is changed, and in the present specification, represents the generated/absorbed heat quantity associated with a solid-solid phase transition, for example, an electric/magnetic/structural phase transition.

[0052] The vanadium dioxide of the present disclosure can be particulates (powdery). The average particle size (D50: the particle size at the point of a cumulative value corresponding to 50% on a cumulative curve with the total volume regarded as 100% in regard to a particle size distribution obtained on a volume basis) of the core part of the vanadium dioxide of the present disclosure is not particularly limited, but for example, 0.1 μm or more and several hundred μm or less, specifically 0.1 μm or more and 900 μm or less, typically approximately 0.2 μm or more and 50 μm or less, and preferably 0.5 μm or more and 50 μm or less. The average particle size can be measured with the use of a laser diffraction-scattering type particle size-particle size distribution measurement system or an electron scanning microscope. The average particle size can be 0.2 μm or more from the viewpoint of ease of handling and moisture resistance, and preferably 50 μm or less from the viewpoint of being capable of finely forming.

[0053] The above-mentioned vanadium dioxide or ceramic material of the present disclosure can be formed into desired shapes, for example, a sheet, a block, and various other shapes. The forming method is not particularly limited, but compression, sintering, and the like can be used. In addition, the material may be mixed with a binder such as a resin, a rubber, a glass, or the like, and formed into the shapes. Furthermore, the material may be mixed with a fluid resin or the like to provide a paste.

[0054] The above-mentioned vanadium dioxide or ceramic material of the present disclosure may be partially or entirely coated with an insulating material, for example, resin, glass, or the like. The vanadium dioxide of the present disclosure is coated with an insulating material, whereby it is possible to directly install the vanadium dioxide of the present disclosure in the vicinity of a heat source where current can flow or on the circuit board.

[0055] As described above, the vanadium dioxide or ceramic material of the present disclosure can be suitably used as a cooling device, since the latent heat is large, that is, the endothermic amount is large, and the generated and absorbed heat is generated promptly.

[0056] Therefore, the present disclosure also provides a cooling device including the above-mentioned vanadium dioxide or ceramic material of the present disclosure.

[0057] The shape of the cooling device of the present disclosure is not particularly limited, and can be any shape.

[0058] In one embodiment, the cooling device of the present disclosure can have the shape of a block. The adoption of the shape of a block increases the overall volume, thereby making it possible to absorb a larger amount of heat. In addition, in another embodiment, the cooling device according to the present disclosure can have the shape of a sheet. The adoption of the shape of a sheet increases the surface area, thus making absorbed heat to be easily released to the outside. Further, the powder may be in a shape laminated with a metal foil, a sheet, or the like or wrapped.

[0059] The cooling device of the present disclosure may have other members, for example, a protective cover that protects the cooling device, a thermal conductive part such as a metal for enhancing thermal conductivity, an insulating sheet for ensuring insulation, a member (for example, an adhesive sheet, a pin, a claw, and the like) for installation in an electronic device, or the like.

[0060] In addition, the present disclosure also provides an electronic component including the cooling device of the present disclosure, and an electronic device including the cooling device or the electronic component.

[0061] The electronic component is not particularly limited, and examples thereof include components commonly used in electronic devices such as integrated circuits (ICs) such as a central processing unit (CPU), a power management IC (PMIC), a power amplifier (PA), a transceiver IC, and a voltage regulator (VR); light-emitting elements such as a light emitting diode (LED), an incandescent light bulb, and a semiconductor laser; components which can be a heat sources such as a field-effect transistors (FET); and other components, e.g., a lithium ion battery, a substrate, a heat sink, a housing, and the like.

[0062] The electronic device is not particularly limited, and examples thereof include a cellular phone, a smartphone, a personal computer (PC), a tablet terminal, a hard disc drive, and the like.

[0063] Although the present disclosure has been described above, the present disclosure is not limited to the above-described embodiments, and various modifications can be made.

Examples

[0064] The following materials were prepared as starting materials.

[0065] Vanadium Raw Material

[0066] Vanadium dioxide (VO.sub.2, manufactured by Dalian Bolong New Material Co., Ltd.)

[0067] Added (Doped) Raw Materials

[0068] Titanium oxide (TiO.sub.2)

[0069] Tungsten oxide (WO.sub.3)

[0070] Tantalum oxide (Ta.sub.2O.sub.5)

[0071] Niobium oxide (Nb.sub.2O.sub.5)

[0072] Molybdenum oxide (MoO.sub.3)

[0073] Each raw material was weighed so that the composition shown in following Table 1 was obtained, and dry formulated using an IKA mill. Thereafter, in an atmosphere of nitrogen/hydrogen/water or nitrogen/air/hydrogen/water, heat treatment was performed at 900° C. to 1100° C. while controlling the atmosphere so that the vanadium dioxide became stable. The atmosphere may be any atmosphere as long as the vanadium dioxide becomes stable, and the optimum conditions vary depending on the condition of the raw material, but here, the oxygen partial pressure was controlled to be in the range of 1×10.sup.−8 MPa to 1×10.sup.−11 MPa. Compositions of V, W, Ta, Nb, and Mo were determined for the resulting samples by ICP (high frequency inductively coupled plasma) emission spectroscopy. Further, it was confirmed by the powder X-ray diffraction method that the vanadium dioxide of the present disclosure was the main component.

[0074] Moisture Resistance Test

[0075] The temperature of the sample was swept in a nitrogen atmosphere at a heating rate of 10 K/min, from 0° C. to 100° C., and to 0° C., and the endothermic amount during temperature rising was measured by a DSC (differential scanning calorimetry) method. The endothermic amount during temperature rising was defined as an initial latent heat amount. Typically, the DSC measurement result for Sample No. 2 is shown in FIG. 1.

[0076] The obtained powder sample was subjected to a moisture resistance test by leaving it in an environment of 85° C. and a relative humidity of 85% for 500 hours. Thereafter, the latent heat amount was again measured. Typically, the DSC measurement results (only for endothermic) for Sample No. 2 in the moisture resistance test are shown in FIG. 2.

[0077] The measurement results of the latent heat amount are shown in Table 1. The numbers marked with * are comparative examples.

TABLE-US-00001 TABLE 1 Latent heat amount after Initial latent moisture Sample heat amount resistance test No. Composition (J/g) (J/g)  1* VO.sub.2 68.2 —  2* V.sub.0.995W.sub.0.005O.sub.2 50.2 —  3* V.sub.0.99W.sub.0.01O.sub.2 39.1 —  4* V.sub.0.99Mo.sub.0.01O.sub.2 38.2 —  5* V.sub.0.99Nb.sub.0.01O.sub.2 42.5 —  6* V.sub.0.99Ta.sub.0.01O.sub.2 40.1 —  7* V.sub.0.99Ti.sub.0.01O.sub.2 52.7 —  8 V.sub.0.98Ti.sub.0.02O.sub.2 49.2 32.1  9 V.sub.0.95Ti.sub.0.05O.sub.2 45.9 41.2 10 V.sub.0.9Ti.sub.0.1O.sub.2 43.4 42.2 11 V.sub.0.8Ti.sub.0.2O.sub.2 40.3 39.7 12 V.sub.0.7Ti.sub.0.3O.sub.2 36.5 35.5 13* V.sub.0.6Ti.sub.0.4O.sub.2 28.2 25.8 14 V.sub.0.895Ti.sub.0.1W.sub.0.005O.sub.2 49.5 47.6 15 V.sub.0.85Ti.sub.0.1W.sub.0.05O.sub.2 38.0 33.9 16 V.sub.0.895Ti.sub.0.1Mo.sub.0.005O.sub.2 37.6 33.7 17 V.sub.0.75Ti.sub.0.1Mo.sub.0.15O.sub.2 38.9 35.9 18 V.sub.0.895Ti.sub.0.1Ta.sub.0.005O.sub.2 42.5 40.2 19 V.sub.0.75Ti.sub.0.1Ta.sub.0.15O.sub.2 37.2 36.1 20 V.sub.0.895Ti.sub.0.1Nb.sub.0.005O.sub.2 41.9 38.9 21 V.sub.0.75Ti.sub.0.1Nb.sub.0.15O.sub.2 33.8 34.5

[0078] As shown in FIG. 1 and FIG. 2, the vanadium oxide of Sample No. 2 containing no titanium showed a large endothermic peak during temperature rising before the moisture resistance test, but in accordance with progress of the moisture resistance test, the endothermic peak declined, and the peak could not be confirmed after 500 hours. Therefore, when the sample after the moisture resistance test was examined by X-ray powder diffraction, it was found that the crystalline phase different from V.sub.0.995W.sub.0.005O.sub.2 was the main, and it is presumed that the sample was changed to another substance due to moisture and the endothermic characteristic was lost.

[0079] As shown in Table 1, no endothermic peak could be confirmed in Sample Nos. 1 to 6 containing no titanium and Sample No. 7 with a titanium content of 0.01 parts by mole after the moisture resistance test. Further, in Sample No. 13 in which a titanium content was 0.4 parts by mole, the endothermic peak did not disappear even after the moisture resistance test, but because the titanium content was large, the latent heat amount was less than 30 J/g. On the other hand, Sample Nos. 8 to 12 and 14 to 21 having a titanium content of 0.02 to 0.3 parts by mole had a latent heat amount of 30 J/g or more even after the moisture resistance test, and it was confirmed that these samples had high latent heat amount and excellent moisture resistance. Although the above was tested in powder form, it was confirmed that even with a sintered body, deterioration occurs similarly with moisture although it occurs slowly.

[0080] Surface Observation

[0081] Furthermore, on behalf of the samples, the states of the particles of Sample Nos. 2 and 10 before and after the moisture resistance test were observed with a scanning electron microscope. The results for Sample No. 2 are shown in FIG. 3 (before moisture resistance test) and FIG. 4 (after moisture resistance test), and the results for Sample No. 10 are shown in FIG. 5 (before moisture resistance test) and FIG. 6 (after moisture resistance test).

[0082] As shown in FIGS. 3 and 4, the particles of Sample No. 2, which are vanadium dioxide containing no titanium, have greatly changed in the surface state, and it is considered that hydroxylation and the like occurred due to moisture. On the other hand, as shown in FIGS. 5 and 6, the particles of Sample No. 10, which are the vanadium dioxide of the present disclosure, showed no significant change in the surface state before and after the moisture resistance test. This is considered to be due to the suppression of the reaction such as hydroxylation due to the improved moisture resistance.

[0083] Although the present disclosure is not bound by any theory, the reason that the moisture resistance is improved by being doped with Ti is considered as follows. Deterioration of vanadium dioxide due to moisture may be derived from instability of V.sup.4+. It is considered that V.sup.4+ in vanadium dioxide is likely to change to V.sup.5+ by high humidity atmosphere that is an oxidizing atmosphere, and vanadium dioxide is subjected to oxidation or hydroxylation to deteriorate. It is considered that V.sup.4+ was stabilized by solid solution of a proper amount of titanium dioxide stable in tetravalent (Ti.sup.4+) in vanadium dioxide and oxidation from V.sup.4+ to V.sup.5+ could be suppressed in a high humidity atmosphere.

[0084] In the present specification, for the sake of convenience, the oxygen amount in the chemical formula is described as 2 (2 parts by mole of oxygen, with respect to 1 part by mole in total of vanadium, Ti and other atoms M), but as long as it is vanadium dioxide that can be crystal-structurally stably formed, slight deviation from 2 is permitted. This slight deviation is approximately 1.9 to 2.1 in VOx from the oxygen amount obtained from the chemical analysis result. Even in this case, it is possible to obtain vanadium dioxide which exhibits the same action and effect as the present disclosure and has high moisture resistance and excellent endothermic properties.

INDUSTRIAL APPLICABILITY

[0085] The cooling device of the present disclosure can be used as, for example, a cooling device of a small-size communication terminal which has a significant issue with countermeasures against heat.