Abstract
The present invention discloses a CNFET double-edge pulse JKL flip-flop, comprising a double-edge pulse signal generator, 31 CNFET tubes, 6 NTI gate circuits having the same circuit structure, 6 PTI gate circuits having the same circuit structure as well as the 1.sup.st and 2.sup.nd two-value inverters having the same circuit structure; it features in correct logic functions as well as high-speed and low power consumption.
Claims
1. A CNFET double-edge pulse JKL flip-flop, comprising: a double-edge pulse signal generator; 1.sup.st, 2.sup.nd, 3.sup.rd, 4.sup.th, 5.sup.th, 6.sup.th, 7.sup.th, 8.sup.th, 9.sup.th, 10.sup.th, 11.sup.th, 12.sup.th, 13.sup.th, 14.sup.th, 15.sup.th, 16.sup.th, 17.sup.th, 18.sup.th, 19.sup.th, 20.sup.th, 21.sup.st, 22.sup.nd, 23.sup.rd, 24.sup.th, 25.sup.th, 26.sup.th, 27.sup.th, 28.sup.th, 29.sup.th, 30.sup.th and 31.sup.st CNFET tubes; 6 NTI gate circuits having the same circuit structure; 6 PTI gate circuits having the same circuit structure; 1.sup.st and 2.sup.nd three-value inverters having the same circuit structure, wherein the 6 NTI gate circuits comprise the 1.sup.st, 2.sup.nd, 3.sup.rd, 4.sup.th, 5.sup.th and 6.sup.th NTI gate circuits, and the 6 PTI gate circuits comprise the 1.sup.st, 2.sup.nd, 3.sup.rd, 4.sup.th, 5.sup.th and 6.sup.th PTI gate circuits, wherein the 1.sup.st, 11.sup.th, 21.sup.st and 26.sup.th CNFET tubes belong to P CNFET tubes, the 2.sup.nd, 3.sup.rd, 4.sup.th, 5.sup.th, 6.sup.th, 7.sup.th, 8.sup.th, 9.sup.th, 10.sup.th, 12.sup.th, 13.sup.rd, 14.sup.th, 15.sup.th, 16.sup.th, 17.sup.th, 18.sup.th, 19.sup.th, 20.sup.th, 22.sup.nd, 23.sup.rd, 24.sup.th, 25.sup.th, 27.sup.th, 28.sup.th, 29.sup.th, 30.sup.th and 31.sup.st CNFET tubes belong to N CNFET tubes, wherein a source of each of the 1.sup.st1, 11.sup.th and 21.sup.st CNFET tubes is to be accessed to a 1.sup.st supply voltage; a source of the 26.sup.th CNFET tube is accessed to a 2.sup.nd supply voltage; and the 2.sup.nd supply voltage is equivalent to half of the 1.sup.st supply voltage; a grid of each of the 1.sup.st, 4.sup.th, 14.sup.th and 21.sup.st CNFET tubes is connected to that of the 25.sup.th CNFET tube, a connecting terminal is connected to an output terminal of the said double-edge pulse signal generator; a drain of each of the 1.sup.st, 2.sup.nd, 5.sup.th and 9.sup.th CNFET tubes is connected to a grid of the 11.sup.th CNFET tube; a source of the 2.sup.nd CNFET tube is connected to a drain of the 3.sup.rd CNFET tube; a source of each of the 3.sup.rd and 8.sup.th CNFET tubes and a drain of the 4.sup.th CNFET tube are connected to a source of 10.sup.th CNFET tube; a source of the 4.sup.th CNFET tube is grounded; a source of the 5.sup.th CNFET tube is connected to a drain of the 6.sup.th CNFET tube; a source of the 6.sup.th CNFET tube is connected to a drain of the 7.sup.th CNFET tube; a source of a 7.sup.th CNFET tube is connected to a drain of the 8.sup.th CNFET tube; a source of the 9.sup.th CNFET tube is connected to a drain of the 10.sup.th CNFET tube; a drain of each of the 11.sup.th, 12.sup.th, 15.sup.th, 18.sup.th and 26.sup.th CNFET tubes is connected to an input terminal of the 1.sup.st three-value inverter; a source of the 12.sup.th CNFET tube is connected to a drain of the 13rd CNFET tube; wherein a source of the 13rd CNFET tube, a drain of the 14.sup.th CNFET tube and a source of the 17.sup.th CNFET tubes are connected to the source of the 20.sup.th CNFET tube; a source of the 15.sup.th CNFET tube is connected to a drain of the 16.sup.th CNFET tube; a source of the 16.sup.th CNFET tube is connected to a drain of the 17.sup.th CNFET tube; a source of the 18.sup.th CNFET tube is connected to a drain of the 19.sup.th CNFET tube; a source of the 19.sup.th CNFET tube is connected to a drain of the 20.sup.th CNFET tube; a source of the 14.sup.th CNFET tube is grounded; a drain of the 21.sup.st CNFET tube, a grid of the 26.sup.th CNFET, a drain of the 22.sup.nd CNFET tube and a drain of the 27.sup.th CNFET tube are connected to the drain of the 30.sup.th CNFET tube; a source of the 22.sup.nd CNFET tube is connected to a drain of the 23.sup.rd CNFET tube; a source of the 23.sup.rd CNFET tube is connected to a drain of the 24.sup.th CNFET tube; a source of the 24.sup.th CNFET tube, a drain of the 25.sup.th CNFET tube and a source of the 29.sup.th CNFET tube are connected to the source of 31.sup.st CNFET tube; a source of the 25.sup.th CNFET tube is grounded; a source of the 27.sup.th CNFET tube is connected to a drain of the 28.sup.th CNFET tube; a source of the 28.sup.th CNFET tube is connected to a drain of the 29.sup.th CNFET tube; a source of the 30.sup.th CNFET tube is connected to a drain of the 31.sup.st CNFET tube; a grid of the 2.sup.nd CNFET tube, an input terminal of the 3.sup.rd NTI gate circuit and a grid of the 22.sup.nd CNFET tube are connected to an input terminal of the 5.sup.th PTI gate circuit, and the connecting terminal is the end J of the said JKL flip-flop; a grid of the 5.sup.th CNFET tube, an input terminal of the 1.sup.st PTI gate circuit and a grid of the 15.sup.th CNFET tube are connected to an input terminal of the 6.sup.th NTI gate circuit, and the connecting terminal is end K of the said JKL flip-flop; an input terminal of the 2.sup.nd NTI gate circuit, an input terminal of the 4.sup.th PTI gate circuit and a grid of the 18.sup.th CNFET tube are connected to a grid of the 30.sup.th CNFET, and the connecting terminal is end L of the said JKL flip-flop; an input terminal of the 1.sup.st NTI circuit, an input terminal of the 2.sup.nd PTI gate circuit, a grid of the 8.sup.th CNFET tube, a grid of the 9.sup.th CNFET tube, an input terminal of the 4.sup.th NTI circuit, an input terminal of the 3.sup.rd PTI gate circuit, a grid of the 17.sup.th CNFET tube, a grid of the 20.sup.th CNFET tube, an input terminal of the 5.sup.th NTI gate circuit, an input terminal of the 6.sup.th gate circuit, a grid of the 29.sup.th CNFET tube and a grid of the 31.sup.st CNFET tube are connected to an output terminal of the 2.sup.nd three-value inverter, and the connecting terminal is the output terminal of the said JKL flip-flop; an output terminal of the 1.sup.st NTI gate circuit is connected to a grid of the 3.sup.rd CNFET tube; an output terminal of the 2.sup.nd NTI gate circuit is connected to a grid of the 10.sup.th CNFET tube; an output terminal of the 1.sup.st PTI gate circuit is connected to a grid of the 6.sup.th CNFET tube; an output terminal of the 2.sup.nd PTI gate circuit is connected to a grid of the 7.sup.th CNFET tube; an output terminal of the 3.sup.rd NTI gate circuit is connected to a grid of the 12.sup.th CNFET tube; an output terminal of the 4.sup.th NTI gate circuit is connected to a grid of the 13.sup.th CNFET tube; an output terminal of the 3.sup.rd PTI gate circuit is connected to a grid of the 16.sup.th CNFET tube; an output terminal of the 4.sup.th PTI gate circuit is connected to a grid of the 19.sup.th CNFET tube; an output terminal of the 5th PTI gate circuit is connected to a grid of the 23rd CNFET tube; an output terminal of the 5th NTI gate circuit is connected to a grid of the 24th CNFET tube; an output terminal of the 6th PTI gate circuit is connected to a grid of the 28th CNFET tube; an output terminal of the 6th NTI gate circuit is connected to a grid of the 27th CNFET tube; an output terminal of the 1st three-value inverter is connected to an input terminal of the 2nd three-value inverter.
2. The CNFET double-edge pulse JKL flip-flop according to claim 1, wherein the said NTI gate circuit comprises 32nd and 33.sup.rd CNFET tubes; the 32nd CNFET tube belongs to P CNFET tube; the 33.sup.rd CNFET tube belongs to N CNFET tube; a source of the 32.sup.nd CNFET tube is accessed to the 1.sup.st supply voltage; a grid of the 32.sup.nd CNFET tube is connected to a grid of the 33.sup.rd CNFET tube, and its connecting terminal is the input terminal of the said NTI gate circuit; a drain of the 32.sup.nd CNFET tube is connected to a drain of the 33.sup.rd CNFET tube, and its connecting terminal is the output terminal of the said NTI gate circuit; a source of the 33.sup.rd CNFET tube is grounded.
3. The CNFET double-edge pulse JKL flip-flop according to claim 1, wherein the said PTI gate circuit comprises 34.sup.th and 35.sup.th CNFET tubes; the 34.sup.th CNFET tube belongs to P CNFET tube; the 35.sup.th CNFET tube belongs to N CNFET tube; a source of the 34.sup.th CNFET tube is accessed to the 1.sup.st supply voltage; a grid of the 34.sup.th CNFET tube is connected to a grid of the 35.sup.th CNFET tube, and its connecting terminal is the input terminal of the said PTI gate circuit; a drain of the 34.sup.th CNFET tube is connected to a drain of the 35.sup.th CNFET tube, and its connecting terminal is the output terminal of the said PTI gate circuit; a source of the 35.sup.th CNFET tube is grounded.
4. The CNFET double-edge pulse JKL flip-flop according to claim 1, wherein the 1.sup.st three-value inverter comprises 36.sup.st, 37.sup.th, 38.sup.th, 39.sup.th, 40.sup.th and 41.sup.st CNFET tubes; the 36.sup.th, 37.sup.th and 38.sup.th CNFET tubes belong to P CNFET tubes; the 39.sup.th, 40.sup.th and 41.sup.st CNFET tubes belong to N CNFET tubes; a source of the 36.sup.th and 37.sup.th CNFET tubes is accessed to the 1.sup.st supply voltage; a source of the 36.sup.th , 37.sup.th and 40.sup.th CNFET tubes is connected to a source of the 41.sup.st CNFET tube, and its connecting terminal is the input terminal of the 1.sup.st three-value inverter; a drain of the 36.sup.th CNFET tube is connected to a drain of the 38.sup.th CNFET tube; a source of the 38.sup.th CNFET tube, a grid of the 38.sup.th CNFET tube, grid of the 39.sup.th CNFET tube, a drain of the 39.sup.th CNFET tube and a drain of the 37.sup.th CNFET tube are connected to a drain of the 41.sup.st CNFET tube, and their connecting terminals are the output terminal of the 1.sup.st three-value inverter; a source of the 39.sup.th CNFET tube is connected to a drain of the 40.sup.th CNFET tube; a source of the 40.sup.th and 41.sup.th CNFET tubes is grounded.
5. The CNFET double-edge pulse JKL flip-flop according to claim 1, wherein the double-edge pulse signal generator comprises 1.sup.st, 2.sup.nd, 3.sup.rd, 4.sup.th and 5.sup.th two-value inverters, and 42.sup.nd, 43.sup.rd, 44.sup.th and 45.sup.th CNFET tubes; the 42.sup.nd and 43.sup.rd CNFET tubes belong to P CNFET tubes; the 44.sup.th and 45.sup.th CNFET tubes belong to N CNFET tubes; an input terminal of the 1.sup.st two-value inverter, a grid of the 43.sup.rd CNFET tube and a source of the 44.sup.th CNFET tube are connected to a grid of 45.sup.th CNFET tube, and their connecting terminals constitute input terminal of the said double-edge pulse signal generator; an output terminal of the 1.sup.st two-value inverter is connected to an input terminal of the 2.sup.nd two-value inverter; an output terminal of the 2.sup.nd two-value inverter is connected to an input terminal of the 3.sup.rd two-value inverter; an output terminal of the 3.sup.rd two-value inverter, a grid of the 42.sup.nd CNFET tube and a grid of the 44.sup.th CNFET tube are connected to a grid of the 45.sup.th CNFET tube; a source of the 42.sup.th CNFET tube is accessed to the 1.sup.st supply voltage; a drain of the 42.sup.nd CNFET tube is connected to a source of the 43.sup.rd CNFET tube; a drain of each of the 43.sup.rd, 44.sup.th and 45.sup.th CNFET tubes is connected to an input terminal of the 4.sup.th two-value inverter; an output terminal of the 4.sup.th two-value inverter is connected to an input terminal of the 5.sup.th two-value inverter; an output terminal of the 5.sup.th two-value inverter is the output terminal of the said double-edge pulse signal generator.
Description
DESCRIPTION OF DRAWINGS
[0011] FIG. 1 is the circuit diagram of the prevent invention;
[0012] FIG. 2 (a) is the circuit diagram for NTI gate circuit of the present invention;
[0013] FIG. 2 (b) is the graphical diagram for NTI gate circuit of the present invention;
[0014] FIG. 2 (c) is the circuit diagram for PTI gate circuit of the present invention;
[0015] FIG. 2 (d) is the graphical diagram for PTI gate circuit of the present invention;
[0016] FIG. 3 (a) is the circuit diagram for the 1.sup.st three-value inverter of the present invention;
[0017] FIG. 3 (b) is the graphical diagram for the 1.sup.st three-value inverter of the present invention;
[0018] FIG. 4 is the circuit diagram for the double-edge pulse signal generator of the present invention.
DESCRIPTION OF EMBODIMENTS
[0019] The present invention is further described as follows in combination with drawings and embodiments.
Embodiment
[0020] A CNFET double-edge pulse JKL flip-flop as shown in FIG. 1, comprising a double-edge pulse signal generator 1, a 1.sup.st CNFET tube N1, a 2.sup.nd CNFET tube N2, the 3.sup.rd CNFET tube N3, the 4.sup.th CNFET tube N4, the 5.sup.th CNFET tube N5, the 6.sup.th CNFET tube N6, the 7.sup.th CNFET tube N7, the 8.sup.th CNFET tube N8, the 9.sup.th CNFET tube N9, the 10.sup.th CNFET tube N10, the 11.sup.th CNFET tube N11, the 12.sup.th CNFET tube N12, the 13rd CNFET tube N13, the 14.sup.th CNFET tube N14, the 15.sup.th NFET tube N15, the 16.sup.th CNFET tube N16, the 17.sup.th CNFET tube N17, the 18.sup.th CNFET tube N18, the 19.sup.th CNFET tube N19, the 20.sup.th CNFET tube N20, the 21.sup.st CNFET tube N21, the 22.sup.nd CNFET tube N22, the 23.sup.rd CNFET tube N23, the 24.sup.th CNFET tube N24, the 25.sup.th CNFET tube N25, the 26.sup.th CNFET tube N26, the 27.sup.th CNFET tube N27, the 28.sup.th CNFET tube 28, 29.sup.th CNFET tube N29, the 30.sup.th CNFET tube N30, the 31.sup.st CNFET tube N31, 6 NTI gate circuits of the same circuit structure, 6 PTI gate circuits of the same circuit structure, the 1.sup.st three-value inverter F1 and the 2.sup.nd three-value inverter F2 of the same circuit structure; 6 NTI gate circuits comprise the 1.sup.st gate circuit T1, the 2.sup.nd NTI gate circuit T2, the 3.sup.rd NTI gate circuit T3, the 4.sup.th NTI gate circuit T4, the 5.sup.th NTI gate circuit T5 and the 6.sup.th NTI gate circuit T6; 6 PTI gate circuits comprise the 1.sup.st PTI gate circuit P1, the 2.sup.nd PTI gate circuit P2, the 3.sup.rd PTI gate circuit P3, the 4.sup.th PTI gate circuit P4, the 5.sup.th PTI gate circuit P5 and the 6.sup.th PTI gate circuit P6; the 1.sup.st CNFET tube N1, the 11.sup.th CNFET tube N11, the 21.sup.st CNFET tube N21 and the 26.sup.th CNFET tube N26 belong to P CNFET tubes; the 2.sup.nd CNFET tube N2, the 3.sup.rd CNFET tube N3, the 4.sup.th CNFET tube N4, the 5.sup.th CNFET tube N5, the 6.sup.th CNFET tube N6, the 7.sup.th CNFET tube N7, the 8.sup.th CNFET tube N8, the 9.sup.th CNFET tube N9, the 10.sup.th CNFET tube N10, the 12.sup.th CNFET tube N12, the 13rd CNFET tube N13, the 14.sup.th CNFET tube N14, the 15.sup.th CNFET tube N15, the 16.sup.th CNFET tube N16, the 17.sup.th CNFET tube N17, the 18.sup.th CNFET tube N18, the 19.sup.th CNFET tube N19, the 20.sup.th CNFET tube N20, the 22.sup.nd CNFET tube N22, the 23.sup.rd CNFET tube N23, the 24.sup.th CNFET tube N24, the 25.sup.th CNFET tube N25, the 27 CNFET tube N27, the 28.sup.th CNFET tube N28, the 29.sup.th CNFET tube N29, the 30.sup.th CNFET tube N30 and the 31.sup.st CNFET tube N31 belong to N CNFET tubes; source of the 1.sup.st CNFET tube N1, the 11.sup.th tube N11 and the 21.sup.st CNFET tube N21 is accessed to the 1.sup.st supply voltage; source of the 26.sup.th CNFET tube N26 is accessed to the 2.sup.nd supply voltage; the 2.sup.nd supply voltage is equivalent to half of the 1.sup.st supply voltage; grid of the 1.sup.st CNFET tube N1, the 4.sup.th CNFET tube N4, the 14.sup.th CNFET tube N14 and the 21.sup.st CNFET tube N21 is connected to that of the 25.sup.th CNFET tube, and the connecting terminal is connected to the output terminal of the said double-edge pulse signal generator 1; drain of the 1.sup.st CNFET tube N1, the 2.sup.nd CNFET tube N2, the 5.sup.th CNFET tube N5 and the 9.sup.th CNFET tube N9 is connected to grid of the 11.sup.th CNFET tube N11; source of the 2.sup.nd CNFET tube N2 is connected to the drain of the 3rd CNFET tube N3; source of the 3.sup.rd CNFET tube N3 and the 8.sup.th CNFET tube N8 and drain of the 4.sup.th CNFET tube N4 are connected to the source of 10.sup.th CNFET tube N10; source of the 4.sup.th CNFET tube N4 is grounded; source of the 5.sup.th CNFET tube N5 is connected to the drain of the 6.sup.th CNFET tube N6; source of the 6.sup.th CNFET tube N6 is connected to the drain of the 7.sup.th CNFET tube N7; source of the 7.sup.th CNFET tube N7 is connected to the drain of the 8.sup.th CNFET tube N8; source of the 9.sup.th CNFET tube N9 is connected to the drain of the 10.sup.th CNFET tube N10; drain of the 11.sup.th CNFET tube N11, the 12.sup.th CNFET tube N12, the 15.sup.th CNFET tube N15, the 18.sup.th CNFET tube N18 and the 26.sup.th CNFET tube N26 is connected to the input terminal of the 1.sup.st three-value inverter F1; source of the 12.sup.th CNFET tube N12 is connected to the drain of the 13rd CNFET tube N13; source of the 13rd CNFET tube N13, drain of the 14.sup.th CNFET tube N14 and source of the 17.sup.th CNFET tube N17 are connected to the source of the 20.sup.th CNFET tube N20; source of the 15.sup.th CNFET tube N15 is connected to the drain of the 16.sup.th CNFET tube N16; source of the 16.sup.th CNFET tube N16 is connected to the drain of the 17.sup.th CNFET tube N17; source of the 18.sup.th CNFET tube N18 is connected to the drain of the 19.sup.th CNFET tube N19; source of the 19.sup.th CNFET tube N19 is connected to the drain of the 20.sup.th CNFET tube N20; source of the 14.sup.th CNFET tube N14 is grounded; drain of the 21.sup.st CNFET tube N21, grid of the 26.sup.th CNFET tube N26, drain of the 22.sup.nd CNFET tube N22 and drain of the 27.sup.th CNFET tube N27 are connected to the drain of the 30.sup.th CNFET tube N30; source of the 22.sup.nd CNFET tube N22 is connected to the drain of the 23.sup.rd CNFET tube N23; source of the 23.sup.rd CNFET tube N23 is connected to the drain of the 24.sup.th CNFET tube N24; source of the 24.sup.th CNFET tube N24, drain of the 25.sup.th CNFET tube N25 and source of the 29.sup.th CNFET tube N29 are connected to the source of 31.sup.st CNFET tube N31; source of the 25.sup.th CNFET tube N25 is grounded; source of the 27.sup.th CNFET tube N27 is connected to the drain of the 28.sup.th CNFET tube N28; source of the 28.sup.th CNFET tube N28 is connected to the drain of the 29.sup.th CNFET tube N29; source of the 30.sup.th CNFET tube N30 is connected to the drain of the 31.sup.st CNFET tube N31; grid of the 2.sup.nd CNFET tube N2, input terminal of the 3.sup.rd NTI gate circuit T3 and grid of the 22.sup.nd CNFET tube N22 are connected to the input terminal of the 5.sup.th PTI gate circuit P5, and the connecting terminal is the terminal J of the said JKL flip-flop; grid of the 5.sup.th CNFET tube N5, input terminal of the 1.sup.st PTI gate circuit P1 and grid of the 15.sup.th CNFET tube N15 are connected to the input terminal of the 6.sup.th NTI gate circuit T6, and the connecting terminal is terminal K of JKL flip-flop; input terminal of the 2.sup.nd NTI gate circuit T2, input terminal of the 4.sup.th PTI gate circuit P4 and grid of the 18.sup.th CNFET tube N18 are connected to the grid of the 30.sup.th CNFET tube N30, and the connecting terminal is terminal L of JKL flip-flop; input terminal of the 1.sup.st NTI gate circuit T1, input terminal of the 2.sup.nd PTI gate circuit P2, grid of the 8.sup.th CNFET tube N8, grid of the 9.sup.th CNFET tube N9, input terminal of the 4.sup.th NTI gate circuit T4, input terminal of the 3.sup.rd PTI gate circuit P3, grid of the 17.sup.th CNFET tube N17, grid of the 20.sup.th CNFET tube N20, input terminal of the 5.sup.th NTI gate circuit 15, input terminal of the 6.sup.th PTI gate circuit P6, grid of the 29.sup.th CNFET tube N29 and grid of the 31.sup.st CNFET tube N31 are connected to the output terminal of the 2.sup.nd three-value inverter F2, and the connecting terminal is the output terminal of JKL flip-flop; output terminal of the 1.sup.st NTI gate circuit T1 is connected to the grid of the 3.sup.rd CNFET tube N3; output terminal of the 2.sup.nd NTI gate circuit T2 is connected to the grid of the 10.sup.th CNFET tube N10; output terminal of the 1.sup.st PTI gate circuit P1 is connected to the grid of the 6.sup.th CNFET tube N6; output terminal of the 2.sup.nd PTI gate circuit P2 is connected to the grid of the 7.sup.th CNFET tube N7; output terminal of the 3.sup.rd NTI gate circuit is connected to the grid of the 12.sup.th CNFET tube N12; output terminal of the 4.sup.th NTI gate circuit T4 is connected to the grid of the 13.sup.th CNFET N13; output terminal of the 3.sup.rd PTI gate circuit P3 is connected to the grid of the 16.sup.th CNFET tube N16; output terminal of the 4.sup.th PTI gate circuit P4 is connected to the grid of the 19.sup.th CNFET tube N19; output terminal of the 5.sup.th PTI gate circuit P5 is connected to the grid of the 23.sup.rd CNFET tube N23; output terminal of the 5.sup.th NTI gate circuit P5 is connected to the grid of the 24.sup.th CNFET tube N24; output terminal of the 6.sup.th PTI gate circuit is connected to the grid of the 28.sup.th CNFET tube N28; output terminal of the 6.sup.th NTI gate circuit T6 is connected to the grid of the 27.sup.th CNFET tube N27; output terminal of the 1.sup.st three-value inverter F1 is connected to the input terminal of the 2.sup.nd three-value inverter F2.
[0021] As shown in FIGS. 2 (a) and (b), NTI gate circuit in this embodiment comprises the said 32.sup.nd CNFET tube N32 and the 33.sup.rd CNFET tube N33; the 32.sup.nd CNFET tube N32 belongs to P CNFET tube; the 33.sup.rd CNFET tube N33 belongs to N CNFET tube; source of the 32.sup.nd CNFET tube N32 is accessed to the 1.sup.st supply voltage; grid of the 32.sup.nd CNFET tube N32 is connected to the grid of the 33.sup.rd CNFET tube N33, and the connecting terminal is the input terminal of the NTI gate circuit; drain of the 32.sup.nd CNFET tube N32 is connected to the drain of the 33.sup.rd CNFET tube N33, and the connecting terminal is the output terminal of NTI gate circuit; source of the 33.sup.rd CNFET tube N33 is grounded.
[0022] As shown in FIGS. 2 (c) and (d), PTI gate circuit in this embodiment comprises the 34.sup.th CNFET tube N34 and the 35.sup.th CNFET tube N35; the 34.sup.th CNFET tube N34 belongs to P CNFET tube; the 35.sup.th CNFET tube N35 belongs to N CNFET tube; source of the 34.sup.th CNFET tube N34 is accessed to the 1.sup.st supply voltage; grid of the 34.sup.th CNFET tube N34 is connected to the grid of the 35.sup.th CNFET tube N35, and the connecting terminal is the input terminal of PTI gate circuit; drain of the 34.sup.th CNFET tube N34 is connected to the drain of the 35.sup.th CNFET tube N35, and the connecting terminal is the output terminal of PTI gate circuit; source of the 35.sup.th CNFET tube N35 is grounded.
[0023] As shown in FIGS. 3 (a) and (b), the 1.sup.stthree-value inverter F1 in this embodiment comprises the 36.sup.th CNFET tube N36, the 37.sup.th CNFET tube N37, the 38.sup.th CNFET tube N38, the 39.sup.th CNFET tube N39, the 40.sup.th CNFET tube N40 and the 41.sup.st CNFET tube N41; the 36.sup.th CNFET tube N36, the37.sup.th CNFET tube N37 and the 38.sup.th CNFET tube N38 belong to P CNFET tubes; the 329.sup.th CNFET tube N39, the 40.sup.th CNFET tube N40 and the 41.sup.st CNFET tube N41 belong to N CNFET tubes; source of the 36.sup.th CNFET tube N36 and the 37.sup.th CNFET tube N37 is accessed to the 1.sup.st supply voltage; grid of the 36.sup.th CNFET tube N36, the 37.sup.th CNFET tube N37, the 40.sup.th CNFET tube N40 and the 41.sup.st CNFET tube N41 is connected, and the connecting terminal is the input terminal of the 1.sup.st three-value inverter F1; drain of the 36.sup.th CNFET tube N36 is connected to the grid of the 38.sup.th CNFET tube N38; source of the 38.sup.th CNFET tube N38, grid of the 38.sup.th CNFET tube N38, grid of the 39.sup.th CNFET tube N39, drain of the 39.sup.th CNFET tube N39 and drain of the 37.sup.th CNFET tube N37 are connected to the drain of the 41.sup.st CNFET tube N41, and the connecting terminal is the output terminal of the 1.sup.st three-value inverter F1; source of the 39.sup.th CNFET tube N39 is connected to the drain of the 40.sup.th CNFET tube N40; source of the 40.sup.th CNFET tube N40 and the 41.sup.st CNFET tube N41 is grounded.
[0024] As shown in FIG. 4, the double-edge pulse signal generator 1 in this embodiment comprises the 1.sup.st two-value inverter G1, the 2.sup.nd two-value inverter G2, the 3.sup.rd two-value inverter G3, the 4.sup.th two-value inverter G4, the 5.sup.th two-value inverter G5, the 42.sup.nd CNFET tube N42, the 43.sup.rd CNFET tube N43, the 44.sup.th CNFET tube N44 and the 45.sup.th CNFET tube N45; the 42.sup.nd CNFET tube N42 and the 43.sup.rd CNFET tube N43 belong to P CNFET tubes; the 44.sup.th CNFET tube N44 and the 35.sup.th CNFET tube N45 belong to N CNFET tubes; input terminal of the 1.sup.st two-value inverter G1, grid of the 43.sup.rd CNFET tube N43 and source of the 44.sup.th CNFET tube N44 are connected to the grid of the the 45.sup.th CNFET tube N45, and the connecting terminal is the input terminal of the double-edge pulse signal generator 1; output terminal of the 1.sup.st two-value inverter G1 is connected to the input terminal of the 2.sup.nd two-value inverter G2; output terminal of the 2.sup.nd two-value inverter G2 is connected to the input terminal of the 3.sup.rd two-value inverter G3; output terminal of the 3.sup.rd two-value inverter G3, grid of the 42.sup.nd CNFET tube N43 and grid of the 44.sup.th CNFET tube N44 are connected to the source of the 45.sup.th CNFET tube N45; source of the 42.sup.nd CNFET tube N42 is accessed to the 1.sup.st supply voltage; drain of the 42.sup.nd CNFET tube N42 is connected to the source of the 43.sup.rd CNFET tube N43; drain of the 43.sup.rd CNFET tube N43, drain of the 44.sup.th CNFET tube N44 and drain of the 45.sup.th CNFET tube N45 are connected to the input terminal of the 4.sup.th two-value inverter G4; output terminal of the 4.sup.th two-value inverter G4 is connected to the input terminal of the 5.sup.th two-value inverter G5; output terminal of the 5.sup.th two-value inverter G5 is the output terminal of the double-edge pulse signal generator 1.
[0025] In this embodiment, the 1.sup.st supply voltage is 0.9V, and the 2.sup.nd supply voltage is 0.45V.
[0026] In aforesaid embodiments, caliber (diameter) of each CNFET tube is as shown in figures; caliber unit D is nm.
